CN117535797A - Indium phosphide crystal production device and use method thereof - Google Patents
Indium phosphide crystal production device and use method thereof Download PDFInfo
- Publication number
- CN117535797A CN117535797A CN202311642609.4A CN202311642609A CN117535797A CN 117535797 A CN117535797 A CN 117535797A CN 202311642609 A CN202311642609 A CN 202311642609A CN 117535797 A CN117535797 A CN 117535797A
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- crucible
- furnace body
- indium phosphide
- opening
- driving motor
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- 239000013078 crystal Substances 0.000 title claims abstract description 62
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 22
- 230000000903 blocking effect Effects 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000010924 continuous production Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- 239000012459 cleaning agent Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000002699 waste material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses an indium phosphide crystal production device and a use method thereof, belonging to the technical field of semiconductor materials; it comprises the following steps: including the furnace body and set up in the top cap at furnace body top, still include: the driving motor is fixedly arranged at the bottom of the furnace body; the crucible, the crucible support, the movable part and the supporting plate are sequentially connected from top to bottom in the furnace body, and the other end of the supporting plate is in driving connection with the driving motor; a blocking net is arranged in the crucible, a second opening is formed in the top cover, the blocking net is arranged corresponding to the second opening, and a heating component is arranged in the furnace body; vibration parts arranged at two sides of the crucible; the control part is arranged outside the furnace body, and the driving motor, the vibrating part and the heating component are all in control connection with the control part. According to the invention, by arranging the second opening and the blocking net, the splashing crystal solution can be blocked while the added crystal material is introduced into the central heater, so that the splashing crystal solution is prevented from falling onto the crystal bar, continuous production is realized, and the production efficiency is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to an indium phosphide crystal production device and a use method thereof.
Background
Indium phosphide is an inorganic compound mainly used as a semiconductor material. First generation semiconductors (e.g., si) that are distinguished from pure elements and third generation semiconductors (e.g., siC) that are characterized by ultra-wide forbidden bands. Indium phosphide is generally considered a second-generation semiconductor. In recent years, with the technical development of the communication field, new requirements and technical requirements are also made on indium phosphide. There are various methods for growing an indium phosphide single crystal, such as a liquid-sealed Czochralski method (LEC), a horizontal Bridgman method, a vertical temperature gradient method (VGF), and the like.
The indium phosphide crystal grown by adopting the Czochralski method has more uniform impurity distribution, higher mechanical strength and stronger internal gettering capability, so that the indium phosphide crystal can be widely applied to electronic devices and integrated circuits.
In the prior art, most of crucibles used in the Czochralski method are of fixed structures, the difficulty of cleaning the crucibles is high, the cleaning is not thorough easily, and meanwhile, crystal melts cannot be filled in the crucibles in the crystal pulling process, so that the production efficiency is low.
Disclosure of Invention
The invention aims to provide an indium phosphide crystal production device and a use method thereof, which solve the problems that the crucible is difficult to clean, crystal melt cannot be filled in the crucible in the crystal pulling process, and the production efficiency is low.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the utility model provides an indium phosphide crystal production device, includes the furnace body with set up in the top cap at furnace body top still includes:
the driving motor is fixedly arranged at the bottom of the furnace body; the bottom of the furnace body is provided with a first opening, and the driving end of the driving motor penetrates through the first opening and extends into the furnace body;
the crucible, the crucible support, the movable part and the supporting plate are sequentially connected from top to bottom in the furnace body, the other end of the supporting plate is in driving connection with the driving motor, and the driving motor drives the supporting plate to rotate so that the movable part indirectly drives the crucible to rotate;
the crucible is internally provided with a blocking net, the top cover is provided with a second opening, the blocking net is arranged corresponding to the second opening, and the blocking net is used for enabling materials to vertically fall into a gap between the blocking net and the crucible after entering from the second opening and move to the bottom of the crucible along the gap;
the heating component is arranged in the furnace body and is used for heating and melting the crystal;
vibration parts arranged at two sides of the crucible;
and the control part is arranged outside the furnace body, and the driving motor, the vibrating part and the heating component are all in control connection with the control part.
Further, the movable part is a universal joint, one end of the universal joint is connected with the crucible support, and the other end of the universal joint is connected with the supporting plate.
Further, a lifting assembly is arranged on the top cover and comprises a supporting rod, a hydraulic cylinder barrel, a piston rod and a lifting wire, wherein the hydraulic cylinder barrel, the piston rod and the lifting wire are arranged in a matched mode, and the hydraulic cylinder barrel is fixedly connected with the supporting rod; one end of the piston rod, which is far away from the hydraulic cylinder barrel, is connected with the lifting wire, and the other end of the lifting wire is connected with a sub-crystal.
Further, the heating assembly comprises a side heater arranged on the inner wall of the furnace body and a center heater arranged at the bottom in the crucible.
Further, the number of the side heaters is multiple, and the side heaters are arranged at intervals along the inner wall of the furnace body.
Further, the vibration part comprises two air cylinders symmetrically arranged on the outer side wall of the furnace body, a second opening is formed in the furnace body, the moving end of each air cylinder is connected with a fixing rod, one end, away from each air cylinder, of each fixing rod is connected with an arc-shaped ring, and the arc-shaped rings are separated from the crucible by a preset distance.
Further, an observation window is arranged on the furnace body.
A method of using an apparatus for producing indium phosphide crystals as described above, comprising the steps of:
s1, cleaning the crucible, and completing the preliminary preparation work of charging, calcining and leak detection;
s2, maintaining the vacuum degree in the furnace body, introducing high-purity inert gas, filling indium phosphide crystal material, and opening a side heater and a central heater to melt the crystal material;
s3, starting the driving motor to enable the crucible to rotate, and then sequentially entering the processes of seeding, shouldering, isodiametric, ending and rod taking.
Further, the specific implementation steps in the step S1 are as follows: pouring the cleaning agent into the crucible, intermittently vibrating the crucible through the vibrating part to enable the cleaning agent in the crucible to quickly dissolve impurities, and pumping the waste liquid out by using the liquid pumping device after the cleaning is finished.
Further, in the implementation of the step S3, indium phosphide crystal material is added through the second opening so that the liquid level of the melt is always within a preset range, and continuous production of the crystal bar is realized.
The invention has the following beneficial effects:
according to the invention, the movable part and the vibrating part are arranged, so that the crucible can shake within a certain range, the cleaning agent in the crucible can quickly dissolve impurities, and the cleaning efficiency is improved;
according to the invention, by arranging the second opening and the blocking net, the splashing crystal solution can be blocked while the added crystal material is introduced into the central heater, so that the splashing crystal solution is prevented from falling onto the crystal bar, continuous production is realized, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic view of the internal structure of the crystal pulling device of the present invention;
FIG. 2 is a schematic view of the internal structure of the invention when melted;
fig. 3 is a front view of the present invention.
Wherein: 1. a top cover; 2. a furnace body; 3. a heat preservation layer; 4. a vibration section; 5. a side heater; 6. a crucible; 7. a central heater; 8. a universal joint; 9. a support plate; 10. a driving motor; 11. a hydraulic cylinder; 12. pulling a wire; 13. a barrier web; 14. a sub-crystal; 15. a crystal bar; 16. a crucible cover; 17. a second opening; 18. a first opening; 19. an observation window; 20. and a control unit.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1
Referring to fig. 1-2, in the present embodiment, an apparatus for producing indium phosphide crystal includes a furnace body 2, a crucible 6 disposed in the furnace body 2, and a top cover 1 disposed on top of the furnace body 2, and further includes:
the driving motor 10 is fixedly arranged at the bottom of the furnace body 2; the bottom of the furnace body 2 is provided with a first opening, and the driving end of the driving motor 10 penetrates through the first opening and extends into the furnace body 2;
the crucible 6, the crucible support, the movable part and the supporting plate 9 are sequentially connected from top to bottom in the furnace body 2, the other end of the supporting plate 9 is in driving connection with the driving motor 10, and the driving motor 10 drives the supporting plate 9 to rotate so that the movable part indirectly drives the crucible 6 to rotate;
specifically, the movable part is a universal joint 8 or a spring structure, when the movable part is the universal joint 8, one end of the universal joint 8 is connected with the crucible support, and the other end of the universal joint 8 is in driving connection with the supporting plate 9 or a driving part of the driving motor; when the movable part is of a spring structure, one end of the spring structure is connected with the crucible support, and the other end of the spring structure is connected with the supporting plate 9.
Wherein, a blocking net 13 is arranged in the crucible 6, a second opening 17 is arranged on the top cover 1, the blocking net 13 is correspondingly arranged with the second opening 17, and is used for enabling crystal materials to vertically fall into a gap between the blocking net 13 and the crucible 6 after entering from the second opening 17, and move to the vicinity of a bottom central heater 7 of the crucible 6 along the gap and melt; meanwhile, the blocking net 13 blocks the splashed crystal solution, so that the splashed crystal solution is prevented from falling onto the crystal bar, and the production efficiency is improved.
Specifically, the second opening 17 is communicated with a material guiding pipe, and the other end of the material guiding pipe is communicated with a gap between the blocking net 13 and the crucible 6, so that the crystal material enters the gap along the material guiding pipe and moves to the vicinity of the bottom central heater 7 of the crucible 6 along the gap and is melted.
A heating assembly provided in the furnace body 2 for heating and melting the crystal;
vibrating portions 4 provided at both sides of the crucible 6 for limiting an inclination range of the crucible 6;
and a control part 20, wherein the control part 20 is arranged outside the furnace body 2, and the driving motor 10, the vibration part 4 and the heating component are in control connection with the control part 20.
In the embodiment, the movable part and the vibrating part are arranged, so that the crucible can shake within a certain range, the cleaning agent in the crucible can quickly dissolve impurities, and the cleaning efficiency is improved;
in the embodiment, by arranging the second opening and the blocking net, the splashing crystal solution can be blocked while the added crystal material is introduced into the central heater, so that the splashing crystal solution is prevented from falling onto the crystal bar, continuous production is realized, and the production efficiency is improved.
Example 2
This example is a detailed setting based on example 1.
Referring to fig. 3, in this embodiment, a lifting assembly and a first opening 18 are provided on the top cover 1, the lifting assembly includes a support rod, a hydraulic cylinder 11 and a piston rod which are cooperatively provided, and a lifting wire 12, the hydraulic cylinder 11 is fixedly connected with the support rod; one end of the piston rod, which is far away from the hydraulic cylinder 11, is connected with a pulling wire 12, the other end of the pulling wire 12 is connected with a sub-crystal 14, and the sub-crystal 14 enters the furnace body 2 from a first opening 18.
In this embodiment, the heating assembly includes a side heater 5 provided on the inner wall of the furnace body 2 and a center heater 7 provided on the inner bottom of the crucible 6.
Specifically, the number of the side heaters 5 is plural, and the plurality of side heaters 5 are arranged at intervals along the inner wall of the furnace body 2, so that a temperature gradient is generated in the furnace body 2, and crystallization is facilitated.
In this embodiment, the vibration part 4 includes two cylinders symmetrically arranged on the outer side wall of the furnace body 2, a second opening is formed in the furnace body 2, a fixed rod is connected to the moving end of the cylinder, an arc ring is connected to one end of the fixed rod, which is far away from the cylinder, and a predetermined distance is formed between the arc ring and the crucible 6. In the production process, the crucible 6 is driven to rotate by the driving motor 10, and the two arc-shaped rings are matched with each other to form a clamping shape with the crucible 6 so as to enable the crucible 6 to rotate stably.
In the embodiment, the furnace body 2 is provided with an observation window 19, so that the production condition in the furnace body can be observed conveniently.
Example 3
The embodiment provides a method for using an indium phosphide crystal production device, which is a method for using an indium phosphide crystal production device provided in embodiment 1 or embodiment 2, and specifically comprises the following steps:
s1, cleaning a crucible 6, pouring a solution into the crucible 6, intermittently vibrating the crucible 6 through a vibrating part 4 to enable the solution in the crucible 6 to quickly dissolve impurities, pumping out waste liquid by using a liquid pumping device after cleaning is finished, and then completing the preface preparation work of charging, calcining and leak detection;
s2, maintaining the vacuum degree in the furnace body 2, introducing high-purity inert gas, filling indium phosphide crystal material, and opening the side heater 5 and the central heater 7 to melt the crystal material;
s3, starting a driving motor 10 to enable the crucible 6 to rotate, and then sequentially entering the processes of seeding, shouldering, isodiametric, ending and rod taking; in this process, indium phosphide crystal material is added through the second opening 17 so that the melt level is always within a predetermined range, thereby realizing continuous production of the ingot 15.
The above embodiments are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention should fall within the protection scope defined by the claims of the present invention without departing from the design spirit of the present invention.
Claims (10)
1. The utility model provides an indium phosphide crystal production device, includes the furnace body with set up in the top cap at furnace body top, its characterized in that still includes:
the driving motor is fixedly arranged at the bottom of the furnace body; the bottom of the furnace body is provided with a first opening, and the driving end of the driving motor penetrates through the first opening and extends into the furnace body;
the crucible, the crucible support, the movable part and the supporting plate are sequentially connected from top to bottom in the furnace body, the other end of the supporting plate is in driving connection with the driving motor, and the driving motor drives the supporting plate to rotate so that the movable part indirectly drives the crucible to rotate;
the crucible is internally provided with a blocking net, the top cover is provided with a second opening, the blocking net is arranged corresponding to the second opening, and the blocking net is used for enabling materials to vertically fall into a gap between the blocking net and the crucible after entering from the second opening and move to the bottom of the crucible along the gap;
the heating component is arranged in the furnace body and is used for heating and melting the crystal;
vibration parts arranged at two sides of the crucible;
and the control part is arranged outside the furnace body, and the driving motor, the vibrating part and the heating component are all in control connection with the control part.
2. An apparatus for producing indium phosphide crystals as set forth in claim 1, wherein said movable portion is a universal joint having one end connected to said crucible support and the other end connected to said support plate.
3. The indium phosphide crystal production device according to claim 1, wherein a lifting assembly is arranged on the top cover, the lifting assembly comprises a supporting rod, a hydraulic cylinder barrel, a piston rod and a lifting wire, wherein the hydraulic cylinder barrel and the piston rod are arranged in a matched mode, and the hydraulic cylinder barrel is fixedly connected with the supporting rod; one end of the piston rod, which is far away from the hydraulic cylinder barrel, is connected with the lifting wire, and the other end of the lifting wire is connected with a sub-crystal.
4. An indium phosphide crystal production device according to claim 1, wherein said heating assembly comprises side heaters provided on the inner wall of said furnace body and a center heater provided on the inner bottom of said crucible.
5. An indium phosphide crystal production device according to claim 4, wherein the number of said side heaters is plural, and plural said side heaters are provided at intervals along the inner wall of said furnace body.
6. An indium phosphide crystal production device according to claim 1, wherein the vibration portion comprises two cylinders symmetrically arranged on the outer side wall of the furnace body, a second opening is formed in the furnace body, the moving end of each cylinder is connected with a fixing rod, one end of each fixing rod, which is far away from each cylinder, is connected with an arc-shaped ring, and a preset distance is reserved between each arc-shaped ring and the crucible.
7. An indium phosphide crystal production device according to claim 1, wherein an observation window is provided on the furnace body.
8. A method of using an apparatus for producing indium phosphide crystals as set forth in any one of claims 1-7, comprising the steps of:
s1, cleaning the crucible, and completing the preliminary preparation work of charging, calcining and leak detection;
s2, maintaining the vacuum degree in the furnace body, introducing high-purity inert gas, filling indium phosphide crystal material, and opening a side heater and a central heater to melt the crystal material;
s3, starting the driving motor to enable the crucible to rotate, and then sequentially entering the processes of seeding, shouldering, isodiametric, ending and rod taking.
9. The method of claim 8, wherein the step S1 is performed as follows: pouring the cleaning agent into the crucible, intermittently vibrating the crucible through the vibrating part to enable the cleaning agent in the crucible to quickly dissolve impurities, and pumping the waste liquid out by using the liquid pumping device after the cleaning is finished.
10. The method according to claim 8, wherein in the step S3, indium phosphide crystal material is added through the second opening so that the melt level is always within a predetermined range, thereby realizing continuous production of the ingot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311642609.4A CN117535797A (en) | 2023-12-04 | 2023-12-04 | Indium phosphide crystal production device and use method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311642609.4A CN117535797A (en) | 2023-12-04 | 2023-12-04 | Indium phosphide crystal production device and use method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117535797A true CN117535797A (en) | 2024-02-09 |
Family
ID=89785960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311642609.4A Pending CN117535797A (en) | 2023-12-04 | 2023-12-04 | Indium phosphide crystal production device and use method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117535797A (en) |
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2023
- 2023-12-04 CN CN202311642609.4A patent/CN117535797A/en active Pending
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