CN117534030A - Method for forming suspended micro structure on substrate - Google Patents
Method for forming suspended micro structure on substrate Download PDFInfo
- Publication number
- CN117534030A CN117534030A CN202210922761.7A CN202210922761A CN117534030A CN 117534030 A CN117534030 A CN 117534030A CN 202210922761 A CN202210922761 A CN 202210922761A CN 117534030 A CN117534030 A CN 117534030A
- Authority
- CN
- China
- Prior art keywords
- forming
- substrate
- sacrificial layer
- layer structure
- microstructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 48
- 239000007788 liquid Substances 0.000 claims description 18
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
Abstract
The invention provides a method for forming a suspended microstructure on a substrate, which comprises the following steps: forming a recess on one main surface of the substrate; forming a sacrificial layer structure in the recess; forming a fine structure over the sacrificial layer structure, and a channel exposing a portion of the sacrificial layer structure; removing the sacrificial layer structure through the via to expose the recess; and etching the concave part through the channel to form a deeper cavity, and suspending the fine structure. Therefore, the requirements of smaller under etching, controllable cavity depth and larger cavity area can be simultaneously met.
Description
Technical Field
The invention belongs to the field of semiconductor device design and manufacture, and particularly relates to a method for forming a suspended microstructure on a substrate.
Background
Some semiconductor devices, particularly those of the microelectromechanical systems (MEMS: micro Electro Mechanical Systems), rely on vibrations of certain structures of the device, such as MEMS acceleration sensors, gyroscopes, having a vibrating element that requires a cavity at a distance from the substrate. For another example, some micro-heaters, infrared sensors, pirani vacuum gauges and other MEMS devices that work by using the heat transfer principle need to have a vacuum cavity with a certain distance between the microstructure of the device and the substrate to help isolate heat conduction, and ensure the reliability and efficiency of the device work.
In the fabrication of suspended microstructures for most MEMS devices, achieving suspension of the microstructures is inherently challenging. When the MEMS corrosion technology is utilized to release the suspended microstructure, if the area of the microstructure to be released is larger (more than or equal to 1000 mu m < 2 >) and the depth of a cavity below the microstructure after the microstructure is released is deeper (more than or equal to 5 mu m), the sacrificial layer technology cannot be used for manufacturing. At this time, the substrate is corroded by using corrosive liquid or corrosive gas after the microstructure is manufactured, and the microstructure is released to suspend, but after corrosion, the side wall has larger undercutting or the depth of a cavity cannot be controlled to exceed an expected value or the cantilever structure cannot be completely released, and some effective solutions are to etch release holes with smaller sizes on the microstructure, and increase corrosion windows so as to achieve the purpose of completely releasing the microstructure; or the ring groove with a certain depth is etched around the place where the cavity is expected to release the fine structure to be filled, so that the ring groove can act as a fence in the subsequent corrosion process, and the problem of side wall undercut is solved.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.
Disclosure of Invention
The inventors found that the preparation of the existing suspended microstructure has the following limitations: when the microstructure is released, improvement of the problem of side wall corrosion and control of the cavity etching depth cannot be achieved; etching a plurality of release holes with smaller sizes on the microstructure to be released, and increasing the corrosion window can achieve the purpose of releasing the microstructure, but simultaneously reduces the mechanical strength of the microstructure, and can inevitably cause certain influence on the function of the device; especially when the area of the microstructure to be released is large (more than or equal to 1000 mu m 2) and the depth of the cavity below the microstructure to be released is deep (more than or equal to 5 mu m), the method cannot effectively solve the problem.
In order to solve the above-mentioned problems or similar problems, an object of the present invention is to provide a method for forming a suspended microstructure on a substrate, which is used for solving the problems that it is difficult to simultaneously satisfy a small undercut, a controllable cavity depth and a large cavity area when releasing the microstructure in the prior art.
To achieve the above and other related objects, the present invention provides a method for forming a suspended microstructure on a substrate, comprising: providing a substrate; forming a recess on one main surface of the substrate; forming a sacrificial layer structure in the recess; forming a fine structure (e.g., a MEMS micro-heater, etc.) over the sacrificial layer structure, and a channel exposing a portion of the sacrificial layer structure; removing the sacrificial layer structure through the via to expose the recess; and etching the concave part through the channel to form a deeper cavity, and suspending the fine structure.
Optionally, the depth of the recess is 1-5 μm.
Optionally, the area of the recess is greater than or equal to 1000 μm2.
Optionally, the substrate is a silicon substrate.
Optionally, the cavity is machined by dry etching or wet etching.
Optionally, the corrosion of the cavity is isotropic or anisotropic.
Optionally, the sacrificial layer structure comprises an oxide of silicon, and/or a nitride of silicon, and/or an organic.
Optionally, the sacrificial layer structure is removed by dry etching and/or wet etching.
Optionally, the microstructure is suspended above the cavity and connected to the one major face of the substrate by a cantilever structure.
Alternatively, the etching liquid (or gas) 1 for etching the sacrificial layer structure and the etching liquid (or gas) 2 for etching the recess of the substrate are different etching liquids (or gases).
Alternatively, the etching liquid (or gas) 1 and etching liquid (or gas) 2 etch the surface of the fine structure at a much lower rate than the etching of the sacrificial layer structure or the recess of the substrate.
Optionally, the microstructure is a MEMS device structure such as a micro-heater.
As described above, the manufacturing method for forming the suspended microstructure on the substrate of the present invention has the following advantages:
after forming a concave part in advance between the microstructure to be released and the substrate, forming a sacrificial layer structure in the concave part, and releasing the sacrificial layer structure to expose the concave part when releasing the microstructure, and forming a deeper cavity based on the released concave part, thereby completely releasing the microstructure.
Compared with a method for arranging a plurality of release holes to completely release a microstructure and arranging an undercut fence around a cavity below the microstructure to be released to improve the undercut problem, the method provided by the invention allows the undercut problem to be improved without damaging the microstructure, and simultaneously the cavity depth after the microstructure is released is controllable, and particularly has a remarkable effect on the release of the microstructure with a large area (more than or equal to 1000 mu m < 2 >) and a large cavity depth (more than or equal to 5 mu m) after the microstructure is released. The method solves the technical problem of manufacturing the microstructure with larger area (more than or equal to 1000 mu m < 2 >) and larger cavity depth (more than or equal to 5 mu m) after release, and has simple and easily controlled process.
The invention is suitable for preparing suspended micro-structures in various MEMS devices, has universality and wider application prospect.
Drawings
Fig. 1 to 10 are schematic views showing a method for forming a suspended microstructure on a substrate according to an embodiment of the present invention, wherein fig. 10 is a cross-sectional view taken along a line A-A' of fig. 11;
fig. 11 is a schematic top view illustrating a manufacturing method for forming a suspended microstructure on a substrate according to an embodiment of the invention.
Description of element reference numerals
10. Substrate board
11. Concave part
12. Sacrificial layer structure
13. First film
14. Conductive film resistor
15. Electrode
15a first electrode
15b second electrode
16. Second film
17. Channel
18. Micro heater structure
19. Cavity cavity
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
When a suspended microstructure in the microelectronic device is prepared, improvement of side wall undercut problem of a cavity below and control of cavity corrosion depth cannot be achieved; the micro structure to be released is etched with a plurality of release holes with smaller size, and the etching window is increased to achieve the purpose of releasing the micro structure, but the mechanical strength of the micro structure is reduced, and meanwhile, certain influence on the function of the device is unavoidable. Especially when the cavity area required to be prepared is larger (more than or equal to 1000 mu m) 2 ) When the depth is deeper (more than or equal to 5 mu m), the method cannot effectively solve the problem.
In order to solve the above-mentioned problems, the present embodiment provides a manufacturing method for forming a suspended microstructure on a substrate, including:
providing a substrate; forming a recess on one main surface of the substrate; forming a sacrificial layer structure in the recess; forming a fine structure (e.g., a MEMS micro-heater, etc.) over the sacrificial layer structure, and a channel exposing a portion of the sacrificial layer structure; removing the sacrificial layer structure through the via to expose the recess; etching the concave part through the channel to form a deeper cavity, and suspending the fine structure.
In one embodiment, the depth of the recess is 1 to 5 μm.
In one embodiment, the area of the recess is greater than or equal to 1000 μm 2 。
In one embodiment, the substrate is a silicon substrate.
In one embodiment, the cavity is machined by dry etching and/or wet etching.
In one embodiment, the etching of the cavity is isotropic etching or anisotropic etching.
In one embodiment, the sacrificial layer structure comprises an oxide of silicon, and/or a nitride of silicon, and/or an organic.
In one embodiment, the sacrificial layer structure is removed by dry and/or wet etching.
In one embodiment, the microstructure is suspended above the cavity and connected to the one major face of the substrate by a cantilever structure.
In one embodiment, the etching solution (or gas) 1 for etching the sacrificial layer structure and the etching solution (or gas) 2 for etching the recess of the substrate are different etching solutions (or gases).
In one embodiment, the etching liquid (or gas) 1 and etching liquid (or gas) 2 etch the surface of the microstructure at a much lower rate than the etching of the sacrificial layer structure or the recesses of the substrate.
In one embodiment, the micro-structure is a MEMS device structure such as a micro-heater.
In one embodiment, as shown in fig. 1-10, embodiments of the present application provide a method of fabricating a suspended MEMS micro-heater on a substrate. In this embodiment, in order to highlight the main idea of the present application, the schematic diagram includes only the most basic elements.
The method for forming the suspended fine structure on the substrate provided by the embodiment comprises the following steps: providing a substrate 10; forming a recess 11 on one main surface of the substrate; forming a sacrificial layer structure 12 in the recess 11; forming a MEMS micro-heater structure 18 over the sacrificial layer structure 12, and a via 17 exposing a portion of the sacrificial layer structure 12, wherein the MEMS micro-heater structure 18 comprises a first membrane 13, a conductive membrane resistor 14, and a second membrane 16; removing the sacrificial layer structure 12 through the via 17 to expose the recess 11; recess 11 is etched through channel 17 to form a cavity 19 deeper than recess 11 and to suspend MEMS micro-heater structure 18. The present method is described step by step below.
First, as shown in fig. 1, a substrate 10 is prepared. In the present embodiment, for brevity and convenience, the present embodiment will be described taking the substrate 10 as an example of a silicon (Si) substrate conventionally used in semiconductor processes. The present embodiment is not limited thereto, and the substrate 10 may be another substrate, for example, a Silicon On Insulator (SOI) substrate, a glass substrate, a sapphire substrate, a silicon carbide substrate, a silicon germanium substrate, or the like.
Then, as shown in fig. 2, a concave portion 11 is formed on one main surface (for example, an upper surface) of the substrate. The recess 11 is formed by etching the substrate 10 using, for example, a plasma etching process. The depth of the concave portion 11 may be, for example, 1 to 5 micrometers, and specifically, 2 micrometers.
Then, as shown in fig. 3, a sacrificial layer structure 12 is formed in the recess 11. Wherein the surface of the sacrificial layer structure 12 may be substantially on the same plane as the main surface of the substrate 10, and further, the present embodiment may not be limited thereto, and for example, the surface of the sacrificial layer 12 may be higher or lower than the main surface (e.g., upper surface) of the substrate 10.
In this embodiment, the material of the sacrificial layer structure 12 may be silicon oxide, with a thickness of 2.5 microns, formed by conventional TEOS CVD (TEOS: tetraethyl orthosilicate, CVD: chemical Vapor Deposition) and a complementary process. After filling, the silicon oxide is planarized by a CMP (CMP: chemical mechanical polishing, chemical mechanical polishing) process so that the surface thereof is substantially on the same plane as one main surface of the substrate 10. The thickness of the sacrificial layer structure after the CMP process is 2 micrometers, and the surface of the sacrificial layer structure is substantially in the same plane with one main surface of the substrate.
Then, as shown in fig. 4, a first thin film 13 is formed on one main surface of the substrate 10. The material and thickness of the first film 13 are designed according to the performance requirements of the micro-heater. For example, the first film 13 may be silicon nitride with a thickness of 2 μm and is grown by conventional PECVD (PECVD: plasma Enhanced Chemical Vapor deposition. Chinese: plasma enhanced chemical vapor deposition).
Then, as shown in fig. 5, a conductive thin film resistor 14 is formed on the first thin film 13. For example, the conductive sheet resistor 14 may be metallic Ti and may be 0.2 microns thick and formed using conventional PVD (PVD: physical Vapor Deposition, physical vapor deposition) techniques and associated processes.
Then, as shown in fig. 6, the conductive thin film resistor 14 is processed to form the conductive thin film resistor 14 having the meandering structure shown in fig. 11, and the first electrode 15a and the second electrode 15b. The processing of the conductive thin film resistor 14 and the first and second electrodes 15a, 15b may be performed by conventional photolithography and metal etching processes. For example, the metal Etching process may use an Ion Beam Etching (IBE) method or a wet Etching method. In the drawings described later, the first electrode 15a and the second electrode 15b are denoted by reference numeral 15.
Then, as shown in fig. 7, a second film 16 is formed on the conductive thin film resistor 14 and the electrode 15 (e.g., the first electrode 15a, the second electrode 15 b). The material and thickness of the second film 16 are designed according to the performance requirements of the microheater. For example, the second film 16 may be a silicon nitride film, which may be 0.4 μm thick, and may be grown by conventional PECVD (PECVD: plasma Enhanced Chemical Vapor deposition. Chinese: plasma enhanced chemical vapor deposition).
Then, as shown in fig. 8, the second film 16 is etched to expose the electrodes (e.g., the first electrode 15a, the second electrode 15 b) and form a via 17 to partially expose the sacrificial layer structure 12. For example, the etching of the second insulating film 16 may be performed using conventional photolithography and dielectric layer etching, and a complementary process. For example, the dielectric layer etching process may use a plasma etching method.
Then, as shown in fig. 9, the sacrificial layer structure 12 is removed through the channels 17 using an etching liquid (or gas) 1 to expose the recesses 11; the etching rate of the surface of the micro-heater structure 18 by the etching liquid (or gas) 1 is much lower than the etching rate of the sacrificial layer structure 12. For example, by wet etching, the etching liquid 1 may be a BOE (buffered oxide etching liquid) solution, an HF solution, or the like.
Then, as shown in fig. 10, the recess 11 is etched through the channel 17 using an etching solution (or gas) 2 to form a deeper cavity 19, and the micro-heater structure 18 is suspended. The etching rate of the surface of the micro-heater structure 18 by the etching liquid (or gas) 2 is much lower than the etching rate of the recess 11 of the substrate. For example, with a wet etching process, the etching liquid 2 may be a KOH solution, a TAMH (tetramethylammonium hydroxide) solution, a EPW (ethylenediamine, catechol, and water) solution, or the like.
As described above, the present embodiment provides a manufacturing method for forming a suspended microstructure on a substrate, which is simple and controllable, has low manufacturing cost, and has universality. The present application has been described in connection with specific embodiments, but it should be apparent to those skilled in the art that these descriptions are intended to be illustrative and not limiting. Various modifications and alterations of this application may occur to those skilled in the art in light of the spirit and principles of this application, and are to be seen as within the scope of this application.
As described above, the manufacturing method for forming the suspended microstructure on the substrate of the present invention has the following advantages:
the invention provides a manufacturing method for forming a suspended microstructure on a substrate, which comprises the steps of forming a sacrificial layer structure in a concave part after forming the concave part in advance between the microstructure to be released and the substrate, and releasing the sacrificial layer structure when releasing the microstructureThe layer structure is formed with deeper cavities based on the released recesses, thereby completely releasing the microstructure. Compared with the method of arranging a plurality of release holes to achieve the complete release of the microstructure and arranging an undercut fence around the cavity below the microstructure to be released in advance to improve the undercut problem, the method provided by the invention allows the undercut problem to be improved without damaging the microstructure, and simultaneously the cavity depth after the microstructure is completely released can be controlled, especially for the cavity with a larger area (more than or equal to 1000 μm) 2 ) And the release of the microstructure with larger cavity depth (more than or equal to 5 μm) after release has obvious effect. The method provided by the invention solves the problems that the surface area is larger (more than or equal to 1000 mu m) 2 ) And the technical problem of manufacturing a microstructure with a large cavity depth (more than or equal to 5 mu m) after release is solved, and the process is simple and easy to control. The invention is suitable for preparing suspended micro-structures in various MEMS devices, has universality and wider application prospect.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (12)
1. A method of forming a suspended microstructure on a substrate, comprising:
forming a recess on one main surface of the substrate;
forming a sacrificial layer structure in the recess;
forming a microstructure and a channel over the sacrificial layer structure, the channel extending through a material layer of the sacrificial layer surface to partially expose the sacrificial layer structure;
removing the sacrificial layer structure through the via to expose the recess;
and etching the concave part through the channel to form a cavity, and suspending the fine structure.
2. The method of forming a suspended microstructure according to claim 1, wherein,
the depth of the concave part is 1-5 μm.
3. The method of forming a suspended microstructure according to claim 1, wherein,
the area of the concave part is larger than or equal to 1000 μm 2 。
4. The method of forming a suspended microstructure according to claim 1, wherein,
the substrate is a silicon substrate.
5. The method of forming a suspended microstructure according to claim 1, wherein,
the cavity is processed by dry etching or wet etching.
6. The method of forming a suspended microstructure as claimed in claim 5, wherein,
the corrosion to the cavity is isotropic or anisotropic.
7. The method of forming a suspended microstructure according to claim 1, wherein,
the sacrificial layer structure includes: silicon oxide, and/or silicon nitride, and/or organic.
8. The method of forming a suspended microstructure as claimed in claim 7, wherein,
the sacrificial layer structure is removed by dry and/or wet etching.
9. The method of forming a suspended microstructure according to claim 1, wherein,
the microstructure is suspended above the cavity and connected to the one major face of the substrate by a cantilever structure.
10. The method of forming a suspended microstructure according to claim 1, wherein,
the etching liquid or gas that etches the sacrificial layer structure is different from the etching liquid or gas that etches the recess of the substrate.
11. The method of forming a suspended microstructure as claimed in claim 10, wherein,
the corrosion rate of the corrosion liquid or gas for corroding the sacrificial layer structure on the surface of the fine structure is lower than that of the sacrificial layer structure;
the etching liquid or gas that etches the recesses of the substrate etches the surface of the fine structure at a lower rate than the recesses of the substrate.
12. The method of forming a suspended microstructure according to claim 1, wherein,
the microstructure is a micro-heater structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210922761.7A CN117534030A (en) | 2022-08-02 | 2022-08-02 | Method for forming suspended micro structure on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210922761.7A CN117534030A (en) | 2022-08-02 | 2022-08-02 | Method for forming suspended micro structure on substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117534030A true CN117534030A (en) | 2024-02-09 |
Family
ID=89781220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210922761.7A Pending CN117534030A (en) | 2022-08-02 | 2022-08-02 | Method for forming suspended micro structure on substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117534030A (en) |
-
2022
- 2022-08-02 CN CN202210922761.7A patent/CN117534030A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7335527B2 (en) | Method for microfabricating structures using silicon-on-insulator material | |
| EP2746218B1 (en) | Reducing MEMS stiction by deposition of nanoclusters | |
| JP6108793B2 (en) | Method for forming a structure comprising an active portion having at least one plurality of thicknesses | |
| US7932118B2 (en) | Method of producing mechanical components of MEMS or NEMS structures made of monocrystalline silicon | |
| US8735199B2 (en) | Methods for fabricating MEMS structures by etching sacrificial features embedded in glass | |
| US20060278942A1 (en) | Antistiction MEMS substrate and method of manufacture | |
| CN110972048B (en) | Microphone, micro-electro-mechanical system device and method for manufacturing micro-electro-mechanical system device | |
| US10112827B2 (en) | Process for producing an electromechanical device | |
| US20160060097A1 (en) | Semiconductor structures and fabrication methods thereof | |
| US20090176370A1 (en) | Single soi wafer accelerometer fabrication process | |
| CN111908420B (en) | Method for manufacturing micro-electromechanical system device | |
| KR20100005908A (en) | The method for fabricating micro vertical structure | |
| CN117534030A (en) | Method for forming suspended micro structure on substrate | |
| US6815243B2 (en) | Method of fabricating a microelectromechanical system (MEMS) device using a pre-patterned substrate | |
| AU2009248425B2 (en) | Method for microfabricating structures using silicon-on-insulator material | |
| US9434602B2 (en) | Reducing MEMS stiction by deposition of nanoclusters | |
| WO2011012036A1 (en) | Micro-scale grid made of single-crystal silicon and method of manufancturing the same | |
| CN110963458B (en) | Method for forming microstructure in substrate and microstructure | |
| US9013012B2 (en) | Self-sealing membrane for MEMS devices | |
| CN109689566B (en) | Method for producing a micromechanical component having a suspended pressure sensor device, and micromechanical component | |
| RU2403647C1 (en) | Method of electrically insulated silicon regions formation in bulk of silicon wafer | |
| EP2199252A1 (en) | Method of making a micro electro mechanical system (MEMS) device | |
| Zhao et al. | Sacrificial grid release technology: A versatile release concept for MEMS structures | |
| KR100701151B1 (en) | Method of fabricating air-gap structure for microelectromechanical system | |
| CN108181415B (en) | Thin film type micro heat conduction detector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |