CN110963458B - Method for forming microstructure in substrate and microstructure - Google Patents
Method for forming microstructure in substrate and microstructure Download PDFInfo
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- CN110963458B CN110963458B CN201811160202.7A CN201811160202A CN110963458B CN 110963458 B CN110963458 B CN 110963458B CN 201811160202 A CN201811160202 A CN 201811160202A CN 110963458 B CN110963458 B CN 110963458B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0097—Devices comprising flexible or deformable elements not provided for in groups B81B3/0002 - B81B3/0094
Abstract
The application provides a method for forming a microstructure in a substrate and the microstructure, wherein the method comprises the following steps: forming a plurality of holes on the surface of the substrate, wherein the transverse dimension of the holes is 0.1-5 microns; and heating the substrate having the plurality of holes to a predetermined temperature in a hydrogen atmosphere, whereby the plurality of holes communicate with each other to form cavities in the interior of the substrate, and a thin film covering the cavities is formed on the surface of the substrate. According to the application, the manufacturing process of the cavity is relatively simple, the cavity shape is easy to control, and the suspended microstructure above the cavity is not easy to be damaged due to the protection of the substrate on the back surface of the cavity, so that the limitation on the manufacturing process and the use mode of the microstructure is reduced.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a method for forming a microstructure in a substrate and a microstructure.
Background
In semiconductor devices, particularly microelectromechanical systems (MEMS: micro Electro Mechanical Systems) devices, it is often necessary to fabricate microstructures on a substrate over a hollow cavity or to suspend the microstructures, depending on the functional requirements of the device. Sometimes, the hollow cavity also needs to be sealed. Such as some pressure sensors, ultrasonic sensors, e.g., capacitive micromachined ultrasonic sensors (CMUTs, capacitive Micromachined Ultrasonic Transduce), require sealed hollow cavities; for another example, some sensors with vibrating structures suspend the vibrating portion; for another example, some temperature sensors require a temperature sensing portion to be constructed on a film having a good heat insulating function to minimize heat conduction between the film and the substrate.
Typically, the hollow cavity needs to be formed with a sacrificial layer. That is, the hollow cavity is formed by forming a cover layer on a material, and then removing the material. Such a material is called a sacrificial layer because it is not left to constitute a functional structure. After the hollow cavity is formed, a suspended microstructure can be further formed.
In addition, another common method of forming suspended microstructures is: and processing the substrate below the micro-structure which needs to be suspended. For example, after the formation of the microstructure to be suspended, a part of the substrate below the microstructure is removed from the direction of the microstructure with a chemical solution or gas, so that the microstructure is suspended; or etching away the substrate under the microstructure from the back surface of the substrate toward the microstructure direction, and leaving only the film constituting the microstructure.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
The inventors of the present application have considered that the conventional method for forming a microstructure has respective drawbacks.
When the hollow cavity structure is formed by the sacrificial layer method, the manufacturing process is more, the limitation on the process conditions and the material of the sacrificial layer is larger, and if the hollow cavity structure is thicker and has larger size, the formation and the removal of the sacrificial layer are difficult.
When the lower substrate is processed to form a hollow cavity from the direction of the micro-structure which needs to be suspended, the design limitation of the shape of the hollow cavity is large, and the control precision of the processing size is not high enough. For example, when removing a substrate under a microstructure from the back surface of the substrate toward the microstructure, a thicker substrate (generally 400 μm or more) needs to be etched through, and thus the processing time is long, the processing cost is high, and the damage to the thin film constituting the microstructure during the processing is also large; in addition, because the substrate is completely etched through, very thin microstructured films (typically only a few microns thick) lose their protection and are prone to breakage, thus limiting both manufacturing and use.
The application provides a method for forming a microstructure in a substrate and a microstructure, wherein the substrate with a plurality of holes is subjected to high-temperature treatment under a hydrogen atmosphere, and the holes are communicated with each other to form a cavity, so that the manufacturing process of the cavity is relatively simple, the cavity form is easy to control, the suspended microstructure above the cavity is not easy to be damaged due to the protection of the substrate on the back of the cavity, and the limitation on the manufacturing process and the use mode of the microstructure is reduced.
According to an aspect of an embodiment of the present application, there is provided a method of forming a fine structure in a substrate, including:
forming a plurality of holes on the surface of the substrate, wherein the transverse dimension of the holes is 0.1-5 microns; and
the substrate having the plurality of holes is subjected to a process of heating the substrate to a predetermined temperature in a hydrogen atmosphere, by which the plurality of holes communicate with each other to form cavities in the interior of the substrate, and a thin film covering the cavities is formed on the surface of the substrate.
According to another aspect of an embodiment of the application, wherein the transverse dimension of the hole is smaller than the longitudinal dimension of the hole.
According to another aspect of an embodiment of the present application, the lateral spacing between adjacent holes is 0.2-10 microns.
According to another aspect of an embodiment of the present application, wherein the predetermined temperature is 900 ℃ to 1200 ℃.
According to another aspect of an embodiment of the present application, the thin film is processed to form a microstructure.
According to another aspect of an embodiment of the present application, wherein the processing the film comprises:
an opening is formed in the film, through which the cavity communicates with the outside.
According to another aspect of an embodiment of the present application, wherein the processing the film comprises:
oxidizing the film to an oxidized film;
forming a fine pattern structure formed by a functional film structure on the surface of the oxidized film;
and forming an opening in the oxide film to form the fine structure composed of the fine pattern structure and the oxide film therebelow.
According to another aspect of an embodiment of the present application, wherein the processing the film comprises:
and forming a fine pattern structure formed by a functional film structure on the surface of the film, wherein the fine pattern structure and the film below the fine pattern structure form the fine structure.
According to another aspect of an embodiment of the present application, there is provided a microstructure manufactured by any of the above aspects.
According to another aspect of an embodiment of the present application, wherein the fine structure comprises at least one of the following structures: pressure sensor, ultrasonic sensor, vibration sensor, temperature sensor and flow sensor.
The application has the beneficial effects that: the manufacturing process of the cavity is simple, the cavity shape is easy to control, and the suspended micro structure above the cavity is not easy to be damaged due to the protection of the substrate on the back of the cavity, so that the limitation on the manufacturing process and the use mode of the micro structure is reduced.
Specific embodiments of the application are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the application are not limited in scope thereby. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is evident that the figures in the following description are only some embodiments of the application, from which other figures can be obtained without inventive effort for a person skilled in the art. In the drawings:
FIG. 1 is a schematic diagram of example 1 of embodiment 1 of the present application;
FIG. 2 is a schematic diagram of example 2 of embodiment 1 of the present application;
FIG. 3 is a schematic diagram of example 3 of embodiment 1 of the present application;
fig. 4 is a schematic diagram of a conventional manufacturing method.
Detailed Description
The foregoing and other features of the application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the specification and drawings, there have been specifically disclosed specific embodiments of the application that are indicative of some of the ways in which the principles of the application may be employed, it being understood that the application is not limited to the specific embodiments described, but, on the contrary, the application includes all modifications, variations and equivalents falling within the scope of the appended claims.
In the following description of the embodiments of the present application, "lateral" means a direction parallel to the substrate surface, and "longitudinal" means a direction perpendicular to the substrate surface.
Example 1
The embodiment of the application provides a method for forming a microstructure in a substrate. The method of the present embodiment may include the steps of:
step 101, forming a plurality of holes on the surface of a substrate, wherein the transverse dimension of the holes is 0.1-5 microns;
and 102, heating the substrate with the holes to a preset temperature in a hydrogen atmosphere, wherein the holes are mutually communicated to form cavities in the substrate, and a film covering the cavities is formed on the surface of the substrate.
In step 102, atoms on the side walls of the holes undergo surface migration in a hydrogen atmosphere when the temperature is raised, and the migration of atoms is faster where the structure is sharper, with the result that the structure becomes smoother and even interconnected, and eventually, such migration of atoms causes the holes to communicate with each other inside the substrate to form a hollow cavity, and the openings of the holes are sealed, thereby forming a continuous film covering the cavity on the surface of the substrate.
According to steps 101 and 102 of the present embodiment, the substrate having the plurality of holes is subjected to a high temperature treatment in a hydrogen atmosphere, and the holes can be communicated with each other to form the cavity, whereby the manufacturing process of the cavity can be made relatively simple and the cavity morphology can be easily controlled.
In this embodiment, the substrate may be a semiconductor substrate, for example, a silicon substrate, a silicon germanium substrate, or a silicon-on-insulator substrate, or the like.
In this embodiment, the transverse dimension of the hole may be smaller than the longitudinal dimension of the hole. The transverse dimensions of the holes may be substantially the same, and the holes may be periodically arranged. The lateral spacing of adjacent holes is, for example, 0.2-10 microns. In this embodiment, parameters such as the number, the size, and the distribution of the holes may be obtained through simulation calculation according to the structure of the cavity that is finally required to be formed.
In step 102 of this embodiment, the predetermined temperature is 900 ℃ to 1200 ℃. In this process, the predetermined temperature is maintained for a time of, for example, 0.5 seconds to 1 hour.
In this embodiment, the method for forming a microstructure in a substrate may further include:
and 103, processing the film to form a microstructure.
In step 103, the suspended microstructure above the cavity is not easily damaged due to the protection of the substrate on the back surface of the cavity, and the limitation on the manufacturing process and the use mode of the microstructure is reduced.
In one embodiment, the processing of the film of step 103 comprises: an opening is formed in the film, and the cavity communicates with the outside through the opening, thereby forming the film into a suspended microstructure.
In another embodiment, the processing of the film of step 103 comprises the steps of:
step 1031, oxidizing the film into an oxidized film;
step 1032, forming a fine pattern structure formed by a functional thin film structure on the surface of the oxide thin film;
and 1033, forming an opening in the oxide film, and forming the fine pattern structure and the fine structure formed by the oxide film below the fine pattern structure.
In this embodiment, the functional thin film is made of a material different from that of the oxide thin film, and the functional thin film can perform a specific function, for example, the functional thin film is a piezoelectric thin film, or the functional thin film is a laminate of a material having a high temperature coefficient of resistance and a material having a low thermal conductivity, or the like.
In yet another embodiment, the processing of the film of step 103 comprises: a fine pattern structure formed by a functional thin film structure is formed on the surface of the thin film, wherein the fine pattern structure and the thin film below the fine pattern structure form a fine structure.
In this embodiment, the functional thin film is made of a material different from that of the thin film, and the functional thin film can perform a specific function, for example, the functional thin film is a piezoelectric thin film, or the functional thin film is a laminate made of a material having a high temperature coefficient of resistance and a material having a low thermal conductivity, or the like.
A microstructure located on the cavity can be formed, via step 103. The microstructure may include, for example, at least one of the following structures: pressure sensor, ultrasonic sensor, vibration sensor, temperature sensor and flow sensor.
Next, a method of forming a microstructure in a substrate of the present embodiment will be described with examples 1, 2, and 3. In each of the examples described below, the substrate is a semiconductor substrate.
Example 1
Example 1 of the present application provides a method for manufacturing a microstructure. Fig. 1 is a schematic diagram of the present example. In this example, the schematic diagram of fig. 1 includes only the simplest elements in order to highlight the main idea of the present application. Fig. 1 a) to d) are schematic cross-sectional views illustrating the manufacturing method of the present example.
First, as shown in a) of fig. 1, one semiconductor substrate 1 is prepared, and one main surface of the semiconductor substrate 1 is 1a. The semiconductor substrate 1 may be a silicon substrate, and the size and thickness are determined as required. In a specific example, the semiconductor substrate 1 is a silicon substrate having a diameter of 200mm, a thickness of 725um, and a crystal orientation of (100).
Next, as shown in b) of fig. 1, a plurality of minute holes 2 are formed on the surface of the main surface 1a of the semiconductor substrate 1. The number, size and distribution of the micro holes 2, determined by the configuration of the cavities 4 as shown in fig. 1 c), can be calculated by simulation. For example, the micro holes 2 may be holes having substantially the same size and periodically arranged. In one embodiment, the depth (i.e., longitudinal dimension) of the hole 2 may be greater than the opening width (i.e., transverse dimension). In one particular example, the holes 2 are cylindrical holes having a diameter of about 1um and a depth of about 3um and arranged periodically at a pitch of about 1.5 um. The holes 2 may be formed using conventional semiconductor micromachining techniques. For example, the holes 2 may be formed by reactive ion beam etching (RIE: reactive Ion Etching) of silicon.
Next, as shown in c) of fig. 1, a cavity 3 is formed inside the semiconductor substrate 1. The cavity 3 can be obtained by subjecting the hole 2 shown in b) of fig. 1 to a high temperature treatment in a hydrogen atmosphere. In a hydrogen atmosphere, when the temperature is raised, the silicon atoms of the side walls of the holes 2 undergo surface migration. This migration of silicon atoms is faster where the structure is sharper, with the result that the structure becomes smoother and even interconnected. The holes 2 shown in b) of fig. 1 are closely spaced and have a depth greater than the width of the opening, and migration of silicon atoms causes the holes 2 to communicate with each other to form a cavity in the semiconductor substrate 1, while the openings of the holes 2 are sealed to form a continuous cavity film 4 on the surface 1a of the semiconductor substrate. Under appropriate processing conditions, the film 4 will completely cover the cavity 3, such that the cavity 3 is sealed inside the semiconductor substrate 1. The thickness of the film 4 can be controlled in the range of 0.1-5um by the design of the holes 2 and adjusting the conditions of the high temperature treatment. The volume of the cavity thus formed is approximately equal to the sum of the volumes of the holes 2. The cavity is shaped with a flat middle and a slightly thicker periphery. In the high temperature treatment, the pressure of the hydrogen gas may be one atmosphere or lower than one atmosphere; the temperature is approximately 900-1200 c. In a specific example, the atmosphere is a pure hydrogen atmosphere, the hydrogen pressure is one atmosphere, and the temperature is about 1100 ℃.
Next, as shown in d) of fig. 1, a microstructure 5 is formed on the film 4. The microstructure 5 may be formed of a single film or a plurality of films, and each film may have a respective structural pattern. The microstructure 5 thus formed is suspended on the surface of the semiconductor substrate 1 by the thin film 4. The microstructure 5 may be part of a MEMS sensor including a pressure sensor, an ultrasonic sensor, a vibration sensor, a temperature sensor, a flow sensor. The membrane 4 may provide deformation, vibration, insulation, thermal insulation, etc. functions for the sensor.
As described above, the microstructure manufacturing method of the present application makes the manufacturing process simple and the cavity morphology easy to control. Meanwhile, the back of the suspended microstructure is protected by the substrate, so that the microstructure is not easy to damage, and the limits of the manufacturing process and the use mode are reduced. The above effect is more remarkable than the conventional fine structure shown in fig. 4. As shown in fig. 4, in the conventional method for manufacturing the microstructure 105 having the cantilever beam 102, in order to realize the suspended microstructure 105, a portion of the substrate 100 under the microstructure 105 may be removed to form the cavity 103. The processing in this way is time-consuming and costly; the structure has low mechanical strength and is easy to damage, and limits are brought to the processing technology and the use.
Example 2
Example 2 of the present application provides another method of manufacturing a microstructure. Fig. 2 is a schematic diagram of the present example. In this example, for brevity, reference may be made to the portion of example 1 of fig. 1, which is not described in detail. Fig. 2 a) -d) are schematic cross-sectional views illustrating the manufacturing method of the present example, and fig. 2 e) is a schematic plan view illustrating the manufacturing method of the present example.
First, as shown in a) of fig. 2, a semiconductor substrate 1 is prepared. The semiconductor substrate 1 may be the same as the semiconductor substrate 1 of example 1.
Next, as shown in b) of fig. 2, a plurality of holes 2 are formed on the surface of the main surface 1a of the semiconductor substrate 1. The shape, distribution, and processing method of the holes 2 can be referred to in example 1.
Next, as shown in c) of fig. 2, a cavity 3 is formed inside the semiconductor substrate 1. The method of forming the cavity 3 can be referred to in example 1.
Next, as shown in d) of fig. 2, an opening 6 is formed above the membrane 4 so that the cavity communicates with the outside. The shape of the opening 6 may be as shown in e) of fig. 2. By forming the openings 6, a suspended microstructure can be obtained. The microstructure is connected to the semiconductor substrate 1 through the cantilever 5 a. In addition, the microstructure may be further processed. For example, the fine structure is subjected to more complex patterning while the opening 6 is formed, according to the functional requirements of the device. For another example, as shown in d) of fig. 1, before forming the opening 6, other desired fine pattern structures are formed on the film 4, and the fine pattern structures and the fine structures together constitute the desired fine structure 5. Such a microstructure 5 may be used as a movable part of a sensor such as measuring vibrations (speed, acceleration, vibration frequency, etc.).
The present example can obtain the same effects as those of example 1.
Example 3
Example 3 of the present application provides another method of manufacturing a microstructure. Fig. 3 is a schematic diagram of the present example. In this example, for brevity, reference may be made to the portion of example 1 of fig. 1, which is not described in detail. Fig. 3 a) to f) are schematic cross-sectional views illustrating the manufacturing method of the present example, and fig. 3 g) is a schematic plan view illustrating the manufacturing method of the present example.
First, as shown in a) of fig. 3, one semiconductor substrate 1 is prepared. The semiconductor substrate 1 may be the same as the semiconductor substrate 1 of example 1.
Next, as shown in b) of fig. 3, a plurality of holes 2 are formed on the surface of the main surface 1a of the semiconductor substrate 1. The shape, distribution, and processing method of the holes 2 can be referred to in example 1.
Next, as shown in c) of fig. 3, a cavity 3 is formed inside the semiconductor substrate 1. The method of forming the cavity 3 can be referred to in example 1.
Next, as shown in d) of fig. 3, the film 4 is oxidized to form a suspended oxidized film 7. The formation of the suspended oxidized film 7 may be performed by a high-temperature treatment in an oxygen-containing atmosphere. The temperature, time, etc. of the high temperature treatment may be determined according to the thickness of the film 4.
Next, as shown in fig. 3 e), further functional film structures 8 are formed on top of the suspended oxide film 7. In one particular example, this functional film structure 8 is constituted by film structures 9 and 10. For example, the thin film structure 9 may be made of a material having a high temperature coefficient of resistance, or may be made of two materials capable of generating a besek effect (Seebeck effect); the thin film structure 10 is constructed of a material having a low thermal conductivity. For example, the thin film structure 9 may be a single-layer thin film of Ti metal with a high temperature coefficient of resistance, or may be made of metal (such as aluminum) and semiconductor material (such as polysilicon) capable of generating a strong besek effect, and the material of the thin film structure 10 may include various silicon oxide materials with good heat insulation performance, or undoped silicon glass (NSG: nondoped silica glass). Wherein, as shown in g) of fig. 3, the film structure 9 is processed into a curved continuous line shape.
Next, as shown in f) and g) of fig. 3, the opening 6 is formed such that the fine structure 5 composed of the suspended oxidized film 7, the functional film structures 9 and 10 is suspended, and the fine structure 5 is connected to the semiconductor substrate 1 only by the cantilever beams 11 and 12. G) of fig. 3 is a plan view of f) of fig. 3, but the film structure 10 is omitted in order to show the shape of the film structure 9.
The microstructure 5 shown in f) and g) of fig. 3 can be used as the sensing portion of the pressure sensor. For example, the film structure 9 may act as a resistor that is sensitive to temperature changes. When a certain current is supplied to the membrane structure 9 via the electrode contact terminals 9a and 9b, the heat dissipated from the membrane structure 9 by gas conduction will change and the temperature of the membrane structure 9 will change if the ambient air pressure changes. Because of the high temperature coefficient of resistance of the thin film structure 9, the resistance of the thin film structure 9 will vary significantly. When the resistance of the thin film structure 9 changes, a circuit that supplies a certain current to the resistance of the thin film structure 9 will sense this change. As a result, the change in ambient air pressure is measured by the circuit. Therefore, the microstructure 5 can serve as a sensing portion of the pressure sensor. Here, because the bottom of the microstructure 5 is suspended and supported only by the thin strip-shaped cantilevers 11 and 12, the heat dissipated from the thin film structure 9 by solid conduction is greatly reduced, while the proportion of heat conducted by ambient gas to the total dissipated heat is increased. Therefore, the sensitivity of the entire sensor to air pressure changes is improved. The above effect is also enhanced by oxidizing the membrane 4 to form the suspended oxidized membrane 7 and constructing the membrane structure 10 from a material having a very low thermal conductivity.
On the other hand, since only the bottom of the fine structure 5 is suspended, the semiconductor substrate 1 at the bottom thereof is not entirely removed, and the processing time and cost are reduced. Further, the structure is remarkably firm and less likely to be broken than a structure in which the semiconductor substrate 1 at the bottom of the microstructure 5 is entirely removed. This not only increases the yield during processing, but also makes the device more durable in use.
While the application has been described in connection with specific embodiments, it will be apparent to those skilled in the art that the description is intended to be illustrative and not limiting in scope. Various modifications and alterations of this application will occur to those skilled in the art in light of the spirit and principles of this application, and such modifications and alterations are also within the scope of this application.
Claims (6)
1. A method of forming a microstructure in a substrate, comprising:
forming a plurality of holes on the surface of the substrate, wherein the transverse dimension of the holes is 0.1-5 microns; and
heating the substrate having the plurality of holes to a predetermined temperature in a hydrogen atmosphere, by which the plurality of holes communicate with each other to form cavities in the interior of the substrate, and forming a thin film covering the cavities on the surface of the substrate,
the method further comprises the steps of:
treating the film to form a microstructure,
wherein the processing of the film comprises:
oxidizing the film to an oxidized film;
forming a fine pattern structure formed by a functional film structure on the surface of the oxidized film; and
forming an opening in the oxide film, forming the fine structure composed of the fine pattern structure and the oxide film thereunder,
wherein the functional film structure is composed of a first film structure and a second film structure, the first film structure is formed on the surface of the oxidation film, the second film structure covers the first film structure,
the first film structure is a single-layer film of metallic titanium (Ti), or is composed of a metal capable of producing Bezier effect and a semiconductor material,
the second film structure is a silicon oxide material or undoped silicon glass.
2. The method of claim 1, wherein,
the transverse dimension of the hole is smaller than the longitudinal dimension of the hole.
3. The method of claim 1, wherein,
the lateral spacing between adjacent holes is 0.2-10 microns.
4. The method of claim 1, wherein,
the predetermined temperature is 900-1200 ℃.
5. A microstructure manufactured by the method of any one of claims 1 to 4.
6. The microstructure of claim 5 wherein
The microstructure includes a pressure sensor.
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| CN105890827A (en) * | 2016-01-18 | 2016-08-24 | 上海芯赫科技有限公司 | Capacitive pressure sensor and manufacturing method thereof |
| CN105905866A (en) * | 2016-05-12 | 2016-08-31 | 广东合微集成电路技术有限公司 | Composite sensor and production method |
| CN106018879A (en) * | 2016-05-12 | 2016-10-12 | 上海芯赫科技有限公司 | MEMS acceleration sensor and manufacturing method thereof |
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