CN117531069A - Electronic atomization device, atomizer, semiconductor atomization element and manufacturing method thereof - Google Patents

Abstract

The application discloses an electronic atomization device, an atomizer, a semiconductor atomization element and a manufacturing method thereof. The semiconductor atomizing element includes: the heating substrate is provided with a liquid guide atomizing groove and a liquid guide hole, the notch of the liquid guide atomizing groove is positioned on the mist outlet surface of the heating substrate, the liquid guide hole penetrates through the heating substrate and penetrates through the liquid guide atomizing groove, the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, and the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than that of the liquid guide hole. Through the mode, the semiconductor atomization element can effectively improve the atomization performance of the semiconductor atomization element, so that the semiconductor atomization element has good atomization performance, is fast in liquid supply and can prevent aerosol from flowing backwards.

Description

Electronic atomization device, atomizer, semiconductor atomization element and manufacturing method thereof

Technical Field

The application relates to the technical field of atomization, in particular to an electronic atomization device, an atomizer, a semiconductor atomization element and a manufacturing method thereof.

Background

The electronic atomizing device mainly comprises an atomizer and a power supply assembly. The atomizer is used as a core device for generating aerosol by the electronic atomization device, and the atomization effect determines the quality and the taste of the aerosol. In a common atomizer, a heating body is a spring-shaped heating wire, and the manufacturing process is to wind the linear heating wire on a fixed shaft. When the heating wire is electrified, aerosol matrixes adsorbed on the fixed shaft are atomized under the heating action of the heating wire.

However, in the use process of the electronic atomizing device, the heating wire is linear, so that only the aerosol substrate positioned near the heating wire body can be heated to be atomized, and the aerosol substrate (including the aerosol substrate positioned between the spiral wires) positioned far away from the heating wire body can be atomized, but the atomizing temperature is relatively low, so that atomized particles are relatively large.

In a common atomizer, the other heating body is a ceramic body, but the ceramic body has the problems of unequal pore sizes, large heating resistance deviation and the like. These problems can lead to uneven heating of the aerosol matrix, dry burning or frying of the oil, and thus can lead to poor aerosol mouthfeel.

Disclosure of Invention

The application mainly provides an electronic atomization device, an atomizer, a semiconductor atomization element and a manufacturing method thereof, so as to solve the problem of poor performance of a heating body in the atomizer.

In order to solve the technical problems, one technical scheme adopted by the application is as follows: a semiconductor atomizing element is provided. The semiconductor atomizing element includes: the liquid guide atomizing device comprises a heating substrate, a liquid guide atomizing groove and a liquid guide hole, wherein a notch of the liquid guide atomizing groove is positioned on a mist outlet surface of the heating substrate, the liquid guide hole penetrates through the heating substrate and penetrates through the liquid guide atomizing groove, the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, and the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than that of the liquid guide hole.

In some embodiments, the siphon hole segment has a gradually increasing cross-sectional area along the penetration direction.

In some embodiments, the siphon hole section penetrates through the liquid-guiding atomization groove, and the groove width of the liquid-guiding atomization groove is smaller than or equal to the aperture of the hole section of the siphon hole section in the liquid-guiding atomization groove.

In some embodiments, the liquid guiding hole further comprises a liquid guiding hole section connected to a small end of the siphon hole section away from the liquid guiding atomizing groove, wherein a cross-sectional area of the siphon hole section along the penetrating direction is greater than or equal to a cross-sectional area of the liquid guiding hole section along the penetrating direction.

In some embodiments, the large end of the siphon hole section is far away from the liquid guiding hole section, and a ratio of the aperture of the large end to the aperture of the liquid guiding hole section is greater than or equal to 2 and less than or equal to 20.

In some embodiments, the pore size of the weep hole segment is greater than or equal to 10um and less than or equal to 100um.

In some embodiments, the semiconductor atomizing element further comprises a heat insulating layer, the heat insulating layer is arranged on one side of the heating substrate, which is away from the notch of the liquid guiding atomizing groove, and the heat insulating layer is provided with a via hole connected with the liquid guiding hole section.

In some embodiments, the liquid guiding atomization grooves, the liquid guiding holes and the through holes are arranged in one-to-one correspondence, the heating substrate is uniformly provided with a plurality of liquid guiding atomization grooves and a plurality of liquid guiding holes, and the heat insulating layer is uniformly provided with a plurality of through holes.

In some embodiments, the via and the weep hole Duan Jun are through holes and have the same pore size.

In some embodiments, the heating substrate comprises an electrode area and an atomization area, the two electrode areas are arranged on two sides of the atomization area, the atomization area is provided with the liquid guide atomization groove and the liquid guide hole, and the electrode area is provided with a conductive layer.

In order to solve the technical problems, another technical scheme adopted by the application is as follows: a method for manufacturing a semiconductor atomizing element is provided. The manufacturing method comprises the following steps: forming a liquid guide atomization groove on one side of the heating substrate; digging holes on the heating substrate to form liquid guide holes, wherein the liquid guide holes penetrate through the heating substrate and are communicated with the liquid guide atomizing groove; the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, and the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than the cross-sectional area of the liquid guide hole.

In order to solve the technical problems, another technical scheme adopted by the application is as follows: an atomizer is provided. The atomizer comprises a semiconductor atomizing element as described above.

In order to solve the technical problems, another technical scheme adopted by the application is as follows: an electronic atomizing device is provided. The electronic atomization device comprises an electric core and the atomizer, wherein the electric core is used for supplying power to the atomizer.

The beneficial effects of this application are: unlike the prior art, the application discloses an electronic atomizing device, an atomizer, a semiconductor atomizing element and a manufacturing method thereof. The liquid guide atomizing groove and the liquid guide hole are formed in the heating substrate, the liquid guide hole penetrates through the heating substrate and penetrates through the liquid guide atomizing groove, the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, the siphon hole section is used for filling liquid into the liquid guide atomizing groove through a siphon effect, so that the liquid filling efficiency of the liquid guide atomizing groove can be improved, the liquid guide atomizing groove has the functions of liquid guide, liquid storage and atomization, the liquid guide atomizing groove consumes aerosol matrixes during operation to generate aerosol, and the siphon hole section continuously supplements the consumed aerosol matrixes consumed by the liquid guide atomizing groove; further, the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than that of the liquid guide hole, and then the notch area of the liquid guide atomizing groove is larger than that of the hole area of the siphon hole section communicated with the liquid guide atomizing groove, so that aerosol generated by atomization can be discharged from the notch of the liquid guide atomizing groove, the aerosol is prevented from passing through the liquid guide Kong Daoguan, the atomization performance of the semiconductor atomizing element can be effectively improved, and the semiconductor atomizing element can have better atomization performance, is fast in liquid supply and can be prevented from flowing backwards.

Drawings

For a clearer description of embodiments of the present application or of the solutions of the prior art, the drawings that are required to be used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the present application, and that other drawings may be obtained, without inventive effort, by a person skilled in the art from these drawings, in which:

FIG. 1 is a schematic view of an embodiment of an electronic atomizing device according to the present disclosure;

FIG. 2 is a schematic view of the atomizer of the electronic atomizing device shown in FIG. 1;

FIG. 3 is a schematic cross-sectional view of the atomizer shown in FIG. 2 taken along the AA;

fig. 4 is a schematic view of the structure of a semiconductor atomizing element in the atomizer shown in fig. 3;

fig. 5 is a schematic top view of the semiconductor atomizing element shown in fig. 4;

fig. 6 is a schematic cross-sectional structural view of the semiconductor atomizing element shown in fig. 5 in the BB direction;

fig. 7 is an enlarged schematic view of the structure of the region C in the semiconductor atomizing element shown in fig. 5;

fig. 8 is an enlarged schematic view of the structure of the region D in the semiconductor atomizing element shown in fig. 6;

fig. 9 is a schematic flow chart of an embodiment of a method for manufacturing a semiconductor atomization element provided in the present application;

FIG. 10 is a flowchart of an embodiment of the manufacturing method shown in FIG. 9, S20;

fig. 11 is a schematic flow chart of forming a heat insulating layer and a via hole in the manufacturing method shown in fig. 9.

Detailed Description

The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

The terms "first," "second," "third," and the like in the embodiments of the present application are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", and "a third" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

Referring to fig. 1 to 2, fig. 1 is a schematic structural diagram of an embodiment of an electronic atomization device provided in the present application, fig. 2 is a schematic structural diagram of an atomizer in the electronic atomization device shown in fig. 1, and fig. 3 is a schematic sectional structural diagram of the atomizer shown in fig. 2 along the AA direction.

The electronic atomizing device 300 may be a disposable electronic atomizing device, i.e., it is not capable of repeatedly injecting liquid, nor is it capable of replacing the structure in which the aerosol matrix is stored; the electronic atomizing device 300 may also include a detachably connected atomizer 100 and a host 200, the host 200 powering the atomizer 100, wherein the atomizer 100 is replaceable or refillable, the atomizer 100 being configured to atomize an aerosol matrix stored therein, which may be a medical fluid or a nutritional fluid, and to generate an aerosol for use.

In this embodiment, the host 200 in the electronic atomizing device 300 is reusable, the atomizer 100 is replaceable, and the host 200 and the atomizer 100 are detachably connected, wherein the host 200 includes a battery cell and a control element, the battery cell is used for supplying power to the atomizer 100, and the control element is used for regulating the power supply process of the battery cell to the atomizer 100 so as to supply power when the user uses the atomizer and suspend the power supply when the user does not use the atomizer.

As shown in fig. 3, the atomizer 100 includes a semiconductor atomizing element 10, a housing 20, a top cover 30, a base 40, and an electrode 50, wherein the top cover 30 is connected to the housing 20 and defines a liquid storage cavity 22 with the housing 20, the liquid storage cavity 22 is used for storing aerosol substrates, the base 40 is connected to the housing 20 and/or the top cover 30, an atomizing cavity 32 is formed between the top cover 30 and the base 40, the electrode 50 is connected to the base 40, the electrode 50 and/or the base 40 hold the semiconductor atomizing element 10 on the top cover 30, the semiconductor atomizing element 10 is further located in the atomizing cavity 32, the electrode 50 is electrically connected to the semiconductor atomizing element 10, and the electrode 50 is further used for electrically connecting an electrical core.

Wherein the top cover 30 is provided with a liquid hole 31, one end of the liquid hole 31 is communicated with the liquid storage cavity 22, the other end of the liquid hole is led to the semiconductor atomization element 10, the base 40 is provided with an air hole 42 for supplying air to the atomization cavity 32, and aerosol is generated in the atomization cavity 32 during operation of the semiconductor atomization element 10 and flows outwards along with the air flow entering from the air hole 42 into the air passage pipe 21 of the shell 20.

Referring to fig. 4 to 8 in combination, fig. 4 is a schematic structural view of a semiconductor atomizing element in the atomizer shown in fig. 3, fig. 5 is a schematic structural view of the semiconductor atomizing element in a plan view shown in fig. 4, fig. 6 is a schematic structural view of the semiconductor atomizing element in a cross-section along the BB direction shown in fig. 5, fig. 7 is a schematic enlarged structural view of a region C in the semiconductor atomizing element shown in fig. 5, and fig. 8 is a schematic enlarged structural view of a region D in the semiconductor atomizing element shown in fig. 6.

In this embodiment, the semiconductor atomization element 10 includes a heating substrate 12, where the heating substrate 12 is provided with a liquid guiding atomization groove 120 and a liquid guiding hole 122, a notch of the liquid guiding atomization groove 120 is located on a mist outlet surface 101 of the heating substrate 12, the mist outlet surface 101 faces the atomization cavity 32, the liquid guiding hole 122 penetrates through the heating substrate 12 and passes through the liquid guiding atomization groove 120, the liquid guiding hole 122 includes a siphon hole section 123, the siphon hole section 123 is connected with the liquid guiding atomization groove 120, the siphon hole section 123 is used for filling liquid into the liquid guiding atomization groove 120 through a siphon effect, and a cross-sectional area of the liquid guiding atomization groove 120 along a penetrating direction E of the liquid guiding hole 122 is larger than a cross-sectional area of the liquid guiding hole 122.

Referring to fig. 8, the heat generating substrate 12 includes a mist generating surface 101 and a liquid absorbing surface 102, the mist generating surface 101 and the liquid absorbing surface 102 are opposite sides of the heat generating substrate 12, and the penetrating direction E is a direction in which the liquid absorbing surface 102 is directed to the mist generating surface 101.

The heating substrate 12 is a semiconductor substrate, and is made of N-type or P-type doped monocrystalline silicon formed by doping monocrystalline silicon, the doping thickness thereof can be 0.5 mm-1.5 mm, and the resistivity thereof after doping is 0.2 R+ -0.1% (cm) ² ) And the temperature change rate of the doping resistor at high temperature, for example 300 degrees, is controlled to be 20-30 percent, and the doping resistor is in a linear relation.

Referring to fig. 6 to 8, the liquid guiding and atomizing tank 120 has liquid guiding and storing functions in a non-operating state, and is also used for atomizing aerosol substrates in an operating state. The liquid-guiding atomizing tank 120 uses capillary action to guide liquid and store liquid, when the electric current is electrified, the electric current flows in the heating substrate 12 (doped monocrystalline silicon substrate), the heating substrate 12 generates heat due to doping resistance, the side wall of the liquid-guiding atomizing tank 120 transfers heat to the aerosol substrate in the liquid-guiding atomizing tank 120, and the aerosol substrate in the liquid-guiding atomizing tank 120 is atomized to generate aerosol.

The cross section of the liquid guiding hole 122 along the penetrating direction E may be a circular hole, an elliptical hole, a square hole, or the like, which is not limited in this application. In this embodiment, the cross section of the liquid guiding hole 122 along the penetrating direction E is a circular hole.

The liquid guiding hole 122 penetrates through the heating substrate 12, and is used for guiding the aerosol matrix to the liquid guiding atomization groove 120 from the other side of the heating substrate 12 so as to supply liquid to the liquid guiding atomization groove 120, wherein the siphon hole section 123 is connected with the liquid guiding atomization groove 120 so as to fill the liquid guiding atomization groove 120 with liquid through siphon effect, so that the liquid filling efficiency of the liquid guiding atomization groove 120 can be improved.

Specifically, during the atomization process of the aerosol matrix in the liquid guiding and atomizing tank 120, the aerosol matrix in the liquid storage cavity 22 is led into the liquid guiding and atomizing tank 120 through the siphon hole section 123 to supplement the aerosol matrix in the liquid guiding and atomizing tank 120; when the aerosol matrix in the siphon hole section 123 is led away, the pressure in the siphon hole section 123 is reduced, so that the aerosol matrix is absorbed from the liquid storage cavity 22, and the siphon hole section 123 is refilled until the aerosol matrix in the liquid guide atomizing tank 120 and the siphon hole section 123 reach balance.

The cross-sectional area of the liquid guiding atomization groove 120 along the penetrating direction E of the liquid guiding hole 122 is larger than the cross-sectional area of the liquid guiding hole 122, that is, the cross-sectional area of the liquid guiding atomization groove 120 along the penetrating direction E is larger than the cross-sectional area of any position of the liquid guiding hole 122 along the same direction, the notch area of the liquid guiding atomization groove 120 is larger than the hole area of the siphon hole section 123 communicated with the liquid guiding atomization groove 120, so that the aerosol generated by atomization can be discharged from the notch of the liquid guiding atomization groove 120, and the aerosol is prevented from flowing backwards to the liquid storage cavity 22 through the liquid guiding hole 122.

As shown in fig. 7 and 8, the siphon hole segment 123 has a gradually increasing cross-sectional area along the penetrating direction E, so that a structure with a large upper part and a small lower part is formed, and the aerosol tends to flow out from the direction of the large opening, so that the function of preventing the aerosol from flowing backward to the liquid storage chamber 22 can be further performed.

In this embodiment, the cross-sectional area of the siphon hole segment 123 in the penetrating direction E is gradually increased linearly, i.e. the siphon hole segment 123 is a tapered hole segment; in other embodiments, the cross-sectional area of the siphon hole segment 123 along the penetration direction E may also increase gradually in a non-linear manner.

Further, the siphon hole section 123 penetrates through the liquid guiding and atomizing tank 120, and the tank width a of the liquid guiding and atomizing tank 120 is smaller than or equal to the aperture b of the hole section of the siphon hole section 123 in the liquid guiding and atomizing tank 120, so as to further improve the liquid filling efficiency of the siphon hole section 123 to the liquid guiding and atomizing tank 120.

Specifically, the liquid guiding and atomizing tank 120 is of a long and narrow tank structure, the hole space of the siphon hole section 123 and the tank space of the liquid guiding and atomizing tank 120 are overlapped, and part of the hole side wall of the siphon hole section 123 is formed on the side wall of the liquid guiding and atomizing tank 120, that is, the siphon hole section 123 and the liquid guiding and atomizing tank 120 are shared by the part of the side wall, so that the communication area between the liquid guiding and atomizing tank 120 and the siphon hole section 123 is larger, and the hole section of the siphon hole section 123 in the liquid guiding and atomizing tank 120 also has a siphon effect, so that the liquid guiding and atomizing tank 120 can be filled more efficiently and rapidly.

In this embodiment, as shown in fig. 7, the siphon hole section 123 is centrally disposed with respect to the liquid guiding and atomizing tank 120, that is, the siphon hole section 123 is located at the center of the liquid guiding and atomizing tank 120 and divides the liquid guiding and atomizing tank 120 into two sub-tanks, and the siphon hole section 123 fills the two sub-tanks simultaneously.

In this embodiment, as shown in fig. 8, the liquid guiding holes 122 and the liquid guiding atomizing grooves 120 are arranged in a one-to-one correspondence; in other embodiments, a plurality of liquid guiding holes 122 may be correspondingly disposed on a liquid guiding and atomizing tank 120, that is, a plurality of siphon hole segments 123 are disposed to communicate with the liquid guiding and atomizing tank 120, for example, two or three liquid guiding holes 122 are correspondingly disposed on a liquid guiding and atomizing tank 120.

Optionally, the liquid guiding hole 122 may also be disposed on one side of the liquid guiding and atomizing tank 120, and is communicated with the gap between the liquid guiding and atomizing tank 120 through the siphon hole segment 123.

Optionally, the siphon hole segment 123 may also be disposed on the bottom wall of the liquid guiding and atomizing tank 120, without penetrating the liquid guiding and atomizing tank 120, where the tank width a of the liquid guiding and atomizing tank 120 is greater than or equal to the aperture b of the siphon hole segment 123 on the bottom wall of the liquid guiding and atomizing tank 120.

In this embodiment, as shown in fig. 8, the liquid guiding hole 122 further includes a liquid guiding hole section 124, and the liquid guiding hole section 124 is connected to a small end of the siphon hole section 123 away from the liquid guiding atomizing tank 120, wherein a cross-sectional area of the siphon hole section 123 along the penetrating direction E is larger than a cross-sectional area of the liquid guiding hole section 124 along the penetrating direction E.

The cross-sectional area of the siphon hole segment 123 in the penetrating direction E gradually increases, and the siphon hole segment has a small end and a large end, wherein the large end is located at the mist outlet surface 101, the small end is located outside the liquid guiding atomization groove 120, the hole cross-sectional area of the small end of the siphon hole segment 123 is equal to the hole cross-sectional area of the liquid guiding hole segment 124, one end of the liquid guiding hole segment 124 away from the siphon hole segment 123 is located at the liquid sucking surface 102, the liquid guiding hole segment 124 relatively has a smaller cross-sectional area, liquid can be guided to the siphon hole segment 123 more quickly, and the siphon hole segment 123 can also accelerate the liquid guiding rate of the liquid guiding hole segment 124 through the generated siphon effect.

In this embodiment, the cross section of the liquid guiding hole 122 along the penetrating direction E is a circular hole, the liquid guiding hole section 124 is a straight hole, the siphon hole section 123 is a tapered hole, and the liquid guiding hole section 124 and the siphon hole section 123 are coaxially arranged.

Alternatively, the axis of the pilot hole segment 124 and the axis of the siphon hole segment 123 may be non-collinear, for example, the two axes may be disposed at a predetermined angle, for example, the axis of the siphon hole segment 123 is disposed in a vertical direction, and the axis of the pilot hole segment 124 is disposed obliquely with respect to each other.

Further, as shown in fig. 7, the large end of the siphon hole segment 123 is far away from the liquid guiding hole segment 124, and the ratio of the aperture b1 of the large end to the aperture c of the liquid guiding hole segment 124 is greater than or equal to 2 and less than or equal to 20, so that the siphon hole segment 123 can generate obvious siphon effect, thereby improving the liquid feeding rate to the liquid guiding atomization groove 120.

For example, the ratio of the aperture b1 of the large end of the siphon pore segment 123 to the aperture c of the weep pore segment 124 may be 2, 4, 6, 8, 10, 12, 14, 16, 18 or 20.

Wherein, the aperture c of the liquid guiding hole section 124 is greater than or equal to 10um and less than or equal to 100um, so that the liquid guiding hole section 124 can guide liquid to the siphon hole section 123 when the semiconductor atomization element 10 is in operation, and the liquid guiding hole section 124 can lock liquid after the semiconductor atomization element 10 stops operation, thereby avoiding excessive liquid supply to the siphon hole section 123.

For example, the aperture c of the pilot hole section 124 may be 10um, 20um, 30um, 40um, 50um, 60um, 70um, 80um, 90um, or 100um.

Further, as shown in fig. 4, 6 and 8, the semiconductor atomizing element 10 further includes a heat insulating layer 14, the heat insulating layer 14 is stacked on a side of the heat generating substrate 12 facing away from the notch of the liquid guiding atomizing groove 120, that is, the heat insulating layer 14 is stacked on the liquid absorbing surface 102 of the heat generating substrate 12, and the heat insulating layer 14 is provided with a via 140 connected to the liquid guiding hole section 124.

The heat insulating layer 14 is used to contact the aerosol matrix in the liquid storage cavity 22, and is used to block the heat generated on the heat-generating substrate 12 from being transferred to the liquid storage cavity 22, and the via 140 is used to guide the aerosol matrix in the liquid storage cavity 22 into the liquid guiding hole section 124.

The heat insulating layer 14 may include a silicon oxide layer and a silicon nitride layer, which are sequentially formed on the liquid absorbing surface 102 to form the heat insulating layer 14, so that the heat insulating layer 14 is a mixed metal layer, which not only insulates heat but also increases hardness, and also allows the silicon-based material not to crack after abrupt temperature change.

In this embodiment, the liquid guiding and atomizing grooves 120, the liquid guiding holes 122 and the through holes 140 are arranged in one-to-one correspondence, the heating substrate 12 is uniformly provided with a plurality of liquid guiding and atomizing grooves 120 and a plurality of liquid guiding holes 122, and the heat insulating layer 14 is uniformly provided with a plurality of through holes 140, so that the aerosol substrate on one side of the liquid storage cavity 22 can be uniformly and rapidly led into the plurality of uniformly distributed liquid guiding and atomizing grooves 120, and the atomization efficiency of the semiconductor atomization element 10 is improved.

The through holes 140 and the liquid guiding hole sections 124 are through holes, and the hole diameters are the same.

The aperture of the via 140 may also be greater or less than the aperture of the pilot hole segment 124, as not limited in this application.

As shown in fig. 4 and 5, the heating substrate 12 includes an electrode area 125 and an atomization area 126, the two electrode areas 125 are separately disposed on two sides of the atomization area 126, the atomization area 126 is provided with a liquid guiding atomization groove 120 and a liquid guiding hole 122, and the electrode area 125 is provided with a conductive layer 127.

In this embodiment, the conductive layer 127 is a metal layer, which is located on the same side as the mist generating surface 101, and the two electrodes 50 are electrically connected to the two conductive layers 127 respectively. The conductive layer 127 may also be a conductive thin film layer, which is not limited in this application.

Alternatively, the two electrode regions 125 may also be two sides on the heat-generating substrate 12, and the two sides are adjacent to the mist-generating surface 101 and between the mist-generating surface 101 and the liquid-absorbing surface 102.

The present application further provides a method for manufacturing a semiconductor atomization element 10, referring to fig. 9, fig. 9 is a schematic flow chart of an embodiment of a method for manufacturing a semiconductor atomization element 10 provided in the present application, where the method includes:

s10: a liquid-guiding atomizing groove is formed on one side of the heating substrate.

The liquid guiding and atomizing groove 120 is formed on one side of the heating substrate 12, and specifically, the liquid guiding and atomizing groove 120 with a set depth and a set shape can be formed by grooving one side of the heating substrate 12 through a physical or chemical method.

For example, the liquid guide atomizing groove 120 is formed by etching by a chemical method, or the liquid guide atomizing groove 120 is formed by photolithography.

S20: the heating substrate is hollowed to form a liquid guide hole, and the liquid guide hole penetrates through the heating substrate and is communicated with the liquid guide atomization groove.

The heating substrate 12 is hollowed to form a liquid guide hole 122, and the liquid guide hole 122 penetrates through the heating substrate 12 and is communicated with the liquid guide atomizing groove 120, wherein the liquid guide hole 122 comprises a siphon hole section 123, the siphon hole section 123 is connected with the liquid guide atomizing groove 120, the siphon hole section 123 is used for filling liquid into the liquid guide atomizing groove 120 through siphon effect, and the cross section area of the liquid guide atomizing groove 120 along the penetrating direction E of the liquid guide hole 122 is larger than the cross section area of the liquid guide hole 122 in the same direction.

The order of step S10 and step S20 is not limited, and step S20 may be performed first to form the liquid guiding hole 122 in the heat generating substrate 12, and then step S10 may be performed.

In this embodiment, the liquid guiding hole 122 is a multi-stage hole, and S20 may be formed in the process of forming the multi-stage hole.

Specifically, the drain hole 122 includes a drain hole section 124 and a siphon hole section 123, referring to fig. 10, fig. 10 is a schematic flow chart of an embodiment of S20 in the manufacturing method shown in fig. 9, and S20 specifically includes:

s21: and digging a hole on one side of the heating substrate, which is away from the liquid guide atomizing groove, so as to form a liquid guide hole section.

Specifically, a hole may be physically or chemically bored in one side of the heat-generating substrate 12 to form the liquid guiding hole section 124 of a set depth and a set shape. For example, the pilot hole segments 124 are chemically etched.

Then, the heat generating substrate 12 is turned over, and S10 and S22 are performed.

S22: and digging a hole on one side of the heating substrate, which is away from the liquid guide hole section, so as to form a siphon hole section, wherein the siphon hole section is communicated with the liquid guide atomizing groove and the liquid guide hole section.

The siphon hole segment 123 is formed in the same manner as the liquid guiding hole segment 124, and will not be described again.

Referring to fig. 11, fig. 11 is a schematic flow chart of forming a heat insulating layer and a via hole in the manufacturing method shown in fig. 9.

Further, before S10 and S20, the method for manufacturing the semiconductor atomization element 10 further includes:

s31: and forming a heat insulation layer on one side of the heating substrate, which is away from the liquid guide atomizing groove.

Specifically, a metal heat insulating layer may be formed on a side of the heating substrate 12 facing away from the liquid guiding atomizing tank 120 in an electroplating manner, the metal heat insulating layer may be a silicon oxide layer or the like, a metal heat insulating layer with a local depth is oxidized, a protective layer is formed on the surface of the metal heat insulating layer by a chemical vapor deposition method, and the protective layer may be a silicon nitride layer or the like, so that the heat insulating layer 14 is a mixed metal layer, which is heat-insulating and can increase hardness, and the silicon-based material may not crack after abrupt temperature change.

S32: and digging holes on the heat insulation layer to form through holes, wherein the through holes are communicated with the liquid guide hole section.

The protective layer and the metal insulating layer at the openings are etched or lithographically removed on the insulating layer 14 to form the via holes 140, exposing the heat generating substrate 12, and then S21 is performed, i.e., the via holes 140 are hollowed out to form the liquid guiding hole segments 124, so that the via holes 140 communicate with the liquid guiding hole segments 124.

The manufacturing method further comprises the following steps: two spaced apart conductive layers 127 are formed on the side of the heat generating substrate 12 facing away from the insulating layer 14 to serve as conductive metal pads of the semiconductor atomizing element 10 for electrically connecting the electrodes 50.

Unlike the prior art, the application discloses an electronic atomizing device, an atomizer, a semiconductor atomizing element and a manufacturing method thereof. The liquid guide atomizing groove and the liquid guide hole are formed in the heating substrate, the liquid guide hole penetrates through the heating substrate and penetrates through the liquid guide atomizing groove, the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, the siphon hole section is used for filling liquid into the liquid guide atomizing groove through a siphon effect, so that the liquid filling efficiency of the liquid guide atomizing groove can be improved, the liquid guide atomizing groove has the functions of liquid guide, liquid storage and atomization, the liquid guide atomizing groove consumes aerosol matrixes during operation to generate aerosol, and the siphon hole section continuously supplements the consumed aerosol matrixes consumed by the liquid guide atomizing groove; further, the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than that of the liquid guide hole, and then the notch area of the liquid guide atomizing groove is larger than that of the hole area of the siphon hole section communicated with the liquid guide atomizing groove, so that aerosol generated by atomization can be discharged from the notch of the liquid guide atomizing groove, the aerosol is prevented from passing through the liquid guide Kong Daoguan, the atomization performance of the semiconductor atomizing element can be effectively improved, and the semiconductor atomizing element has good atomization performance, is fast in liquid supply and can be prevented from flowing backwards.

The foregoing is only examples of the present application, and is not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application or other related technical fields are included in the scope of the patent application.

Claims (17)

1. A semiconductor atomizing element, characterized in that the semiconductor atomizing element comprises:

the liquid guide atomizing device comprises a heating substrate, a liquid guide atomizing groove and a liquid guide hole, wherein a notch of the liquid guide atomizing groove is positioned on a mist outlet surface of the heating substrate, the liquid guide hole penetrates through the heating substrate and penetrates through the liquid guide atomizing groove, the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, and the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than that of the liquid guide hole.

2. A semiconductor atomizing element according to claim 1, wherein the siphon hole segment has a gradually increasing cross-sectional area along the penetrating direction.

3. The semiconductor atomizing element according to claim 2, wherein the siphon hole section penetrates through the liquid-guiding atomizing tank, and a tank width of the liquid-guiding atomizing tank is smaller than or equal to a pore diameter of a hole section of the siphon hole section in the liquid-guiding atomizing tank.

4. The semiconductor atomizing element according to claim 2, wherein the liquid guiding hole further comprises a liquid guiding hole section connected to a small end of the siphon hole section away from the liquid guiding atomizing tank, wherein a cross-sectional area of the siphon hole section in the penetrating direction is equal to or larger than a cross-sectional area of the liquid guiding hole section in the penetrating direction.

5. The semiconductor atomizing element according to claim 4, wherein a large end of the siphon hole section is away from the liquid guiding hole section, and a ratio of a pore diameter of the large end to a pore diameter of the liquid guiding hole section is 2 or more and 20 or less.

6. The semiconductor atomizing element according to claim 5, wherein the liquid guiding hole section has a hole diameter of 10um or more and 100um or less.

7. The semiconductor atomizing element according to claim 4, further comprising a heat insulating layer disposed on a side of the heat generating substrate facing away from the notch of the liquid guiding atomizing tank, and the heat insulating layer is provided with a via hole connected to the liquid guiding hole section.

8. The semiconductor atomizing element according to claim 7, wherein the liquid guiding atomizing grooves, the liquid guiding holes and the via holes are arranged in one-to-one correspondence, a plurality of liquid guiding atomizing grooves and a plurality of liquid guiding holes are uniformly distributed on the heating substrate, and a plurality of via holes are uniformly distributed on the heat insulating layer.

9. The semiconductor atomizing element according to claim 7, wherein the via hole and the liquid guiding hole Duan Jun are through holes, and the hole diameters are the same.

10. The semiconductor atomizing element according to any one of claims 1 to 9, wherein the heat generating substrate includes an electrode region and an atomizing region, two of the electrode regions are provided on both sides of the atomizing region, the atomizing region is provided with the liquid-guiding atomizing tank and the liquid-guiding hole, and wherein the electrode region is provided with a conductive layer.

11. A method of manufacturing a semiconductor atomizing element, comprising:

forming a liquid guide atomization groove on one side of the heating substrate;

digging holes on the heating substrate to form liquid guide holes, wherein the liquid guide holes penetrate through the heating substrate and are communicated with the liquid guide atomizing groove;

the liquid guide hole comprises a siphon hole section, the siphon hole section is connected with the liquid guide atomizing groove, and the cross-sectional area of the liquid guide atomizing groove along the penetrating direction of the liquid guide hole is larger than the cross-sectional area of the liquid guide hole.

12. The method of claim 11, wherein the weep hole comprises a weep hole segment and the siphon hole segment;

the hole digging is performed on the heating substrate to form a liquid guide hole, and the hole digging comprises the following steps:

digging a hole on one side of the heating substrate, which is away from the liquid guide atomizing groove, so as to form the liquid guide hole section;

and digging a hole on one side of the heating substrate, which is away from the liquid guide hole section, so as to form the siphon hole section, wherein the siphon hole section is communicated with the liquid guide atomizing groove and the liquid guide hole section.

13. The method of manufacturing according to claim 12, wherein before forming the liquid-guiding atomizing tank on one side of the heat-generating substrate, further comprising:

forming a heat insulation layer on one side of the heating substrate, which is away from the liquid guide atomizing groove;

and digging holes on the heat insulation layer to form through holes, wherein the through holes are communicated with the liquid guide hole section.

14. The method of manufacturing of claim 13, further comprising:

two spaced conductive layers are formed on the side of the heating substrate facing away from the heat insulating layer.

15. The method of claim 12, wherein the cross-sectional area of the siphon hole segment in the direction of penetration is gradually increased, and the cross-sectional area of the siphon hole segment in the direction of penetration is greater than the cross-sectional area of the liquid guiding hole segment in the direction of penetration.

16. A nebulizer comprising a semiconductor nebulizing element according to any one of claims 1 to 10.

17. An electronic atomizing device, comprising a battery for supplying power to the atomizer, and the atomizer of claim 16.