CN117529576A - 导线涂覆装置 - Google Patents
导线涂覆装置 Download PDFInfo
- Publication number
- CN117529576A CN117529576A CN202280031199.7A CN202280031199A CN117529576A CN 117529576 A CN117529576 A CN 117529576A CN 202280031199 A CN202280031199 A CN 202280031199A CN 117529576 A CN117529576 A CN 117529576A
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- CN
- China
- Prior art keywords
- wire
- process setting
- insulation film
- film coating
- coating apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011248 coating agent Substances 0.000 title claims abstract description 42
- 238000000576 coating method Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 83
- 239000007888 film coating Substances 0.000 claims abstract description 31
- 238000009501 film coating Methods 0.000 claims abstract description 31
- 238000009413 insulation Methods 0.000 claims description 25
- 238000004804 winding Methods 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000009434 installation Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H59/00—Adjusting or controlling tension in filamentary material, e.g. for preventing snarling; Applications of tension indicators
- B65H59/10—Adjusting or controlling tension in filamentary material, e.g. for preventing snarling; Applications of tension indicators by devices acting on running material and not associated with supply or take-up devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/405—Oxides of refractory metals or yttrium
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/54—Apparatus specially adapted for continuous coating
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
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- B65H2701/30—Handled filamentary material
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- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
本发明涉及一种能够在诸如具有小直径的键合导线的导线表面均匀地涂覆薄的绝缘薄膜的导线涂覆装置,根据本发明的导线绝缘薄膜涂覆装置,包括:涂覆部,在与外部隔绝的状态下,在导线表面涂覆绝缘薄膜;导线工艺设置部,设置为可在所述涂覆部的内部和外部移动,在所述导线的内外侧暴露的状态下,所述导线卷绕到所述导线工艺设置部,以在所述涂覆部内部进行绝缘薄膜涂覆工艺。
Description
技术领域
本发明涉及一种导线涂覆装置,更详细地,涉及一种能够在诸如具有小直径的键合导线的导线表面均匀地涂覆薄绝缘薄膜的导线涂覆装置。
背景技术
在将半导体元件的电极和安装基板的引线架电连接的封装工艺中使用键合导线,以往,将电导率、热导率及耐化学性非常优异的金作为键合导线使用。
但金作为贵金属,价格非常高,故存在半导体封装的制造成本增加的问题。因此,为了代替以这种金为原料的现有键合导线,正在研究采用材料成本低的主材料(银、铜等)的键合导线。
为了代替用金制造的键合导线,正在开发电导率优异的铜(Cu)键合导线,但由于铜暴露在空气中时表面容易氧化,因此存在粘合性问题,而且随着半导体元件的集成度提高,相邻键合导线之间的距离变短,因此存在键合导线之间接触导致的短路问题。
为了解决这些问题,提出了在铜键合导线的外部形成钯或涂覆聚合物的技术,但是形成钯时,钯的电阻比铜高6倍以上,涂覆聚合物时,存在导线键合时键合特性及粘合性差的问题。
因此,迫切需要开发一种在键合导线的表面能够形成在防止铜氧化的同时具有优异的绝缘特性的绝缘薄膜的技术。
发明内容
发明所要解决的问题
本发明所要解决的技术问题在于,提供一种能够在诸如具有小直径的键合导线的导线表面均匀地涂覆薄绝缘薄膜的导线涂覆装置。
用于解决问题的方案
为了实现上述目的,本发明的导线绝缘薄膜涂覆装置包括:涂覆部,在与外部隔绝的状态下,在导线表面涂覆绝缘薄膜;导线工艺设置部,设置为能够在上述涂覆部的内部和外部移动,在上述导线的内外侧暴露的状态下,上述导线卷绕到上述导线工艺设置部,以在上述涂覆部内部进行绝缘薄膜涂覆工艺。
并且,优选地,本发明的上述导线工艺设置部包括:中央部,在中央形成为柱状;导线接触部,在上述中央部的外侧以彼此间隔开的方式形成为多个,并且具有线性接触端,使得上述导线以点接触的状态进行卷绕。
并且,优选地,本发明的上述导线接触部,以上述中央部为中心具有一定角间隔的放射状形态设置为多个。
并且,优选地,本发明的上述导线接触部为长条形状。
并且,优选地,本发明的上述导线接触部为板形状。
并且,优选地,本发明的导线绝缘薄膜涂覆装置,还包括:导线装载部,设置在上述涂覆部外部,上述其以上述导线不会在长度方向上相互接触的方式,将上述导线卷绕在上述导线工艺设置部。
并且,优选地,本发明的上述导线装载部包括:导线供应辊,卷绕有一定量的导线;旋转部,使上述导线工艺设置部旋转,将上述导线从上述导线供应辊转移并卷绕到上述导线工艺设置部,使得上述导线成为工艺状态;导线展开部,在上述导线供应辊和上述导线工艺设置部之间,使卷绕在上述导线工艺设置部的导线的相对位置在上述导线工艺设置部的长度方向上进行改变,从而以上述导线不会在长度方向上紧贴的方式进行卷绕;张力调节部,设置在上述导线展开部,用于调节卷绕在上述导线工艺设置部的上述导线的张力,使导线具有一定的张力。
并且,优选地,本发明的上述导线展开部为,在上述导线工艺设置部的长度方向上移动的同时改变在上述导线工艺设置部上的上述导线的卷绕位置的移动轴承。
并且,优选地,本发明的上述导线展开部为,在固定位置将上述导线传送到上述导线工艺设置部的轴承;使上述导线工艺设置部对上述轴承进行相对移动的同时改变上述导线卷绕位置的设置部移动单元。
并且,优选地,本发明的上述导线由铜(Cu)、金(Au)、银(Ag)或铝(Al)中的任意一种构成。
并且,优选地,本发明的上述导线为键合导线(Bonding Wire)。
并且,优选地,本发明的上述导线在上述导线接触部上以与相邻导线的间隔为10mm以下的方式卷绕。
并且,优选地,本发明的上述导线在上述导线接触部上以与相邻导线的间隔为0.5mm以下的方式卷绕。
并且,优选地,本发明的上述绝缘薄膜以1~100nm的厚度涂覆。
并且,优选地,本发明的上述绝缘薄膜包括Al2O3、TiO2和SiO2中的至少一种。
并且,优选地,本发明的上述涂覆部为原子层沉积装置。
发明效果
根据本发明的导线绝缘薄膜涂覆装置,具有在大量设置诸如键合导线的小直径导线的情况下,可以在导线的所有表面上均匀地涂覆薄绝缘薄膜的优点。
附图说明
图1是示出根据本发明一实施例的导线绝缘薄膜涂覆装置的构成的示意图。
图2是示出根据本发明一实施例的导线工艺设置部结构的立体图。
图3是示出根据本发明另一实施例的导线工艺设置部结构的立体图。
图4是示出根据本发明又一实施例的导线工艺设置部结构的立体图。
图5是示出根据本发明一实施例的导线工艺设置部结构的侧视图。
图6是示出根据本发明另一实施例的导线绝缘薄膜涂覆装置的构成的示意图。
图7是示出根据本发明一实施例的导线结构的剖视图。
图8是示出根据本发明一实施例的导线卷绕状态的图。
图9是示出根据本发明另一实施例的导线卷绕状态的图。
具体实施方式
以下,参照附图对本发明具体实施例进行更加详细的说明。
如图1所示,根据本实施例的导线绝缘薄膜涂覆装置100构成为包括涂覆部110和导线工艺设置部120。首先,上述涂覆部110是在与外部隔绝的状态下,在导线1表面涂覆绝缘薄膜2的构成要素。即,上述涂覆部110对卷绕在上述导线工艺设置部120的一定长度的导线1的表面整体上均匀地涂覆绝缘薄膜2。
为此,在本实施例中,上述涂覆部110可以由原子层沉积装置(Atomic LayerDeposition Apparatus)或化学气相沉积装置(Chemical Vapor Deposition Apparatus)等构成。如图1所示,简单地说明上述涂覆部110结构,其可以构成为包括涂覆腔体112和设置在上述涂覆腔体112以控制开口部的闸阀114。
其中,上述涂覆腔体112中设置有用于涂覆绝缘薄膜2的气体供应部和气体排气部等各种构成要素,并且,为了上述导线工艺设置部120的出入,上述闸阀114控制上述涂覆腔体112的开口部。
其次,上述导线工艺设置部120是以能够在上述涂覆部110内部对导线表面进行绝缘薄膜2涂覆工艺的方式设置上述导线1的构成要素。因此,如图1所示,在本实施例中,上述导线工艺设置部120设置为可在上述涂覆部110的内部和外部移动,并且具有在上述导线1的内外侧暴露的状态下,使上述导线1卷绕,以在上述涂覆部110内部进行绝缘薄膜涂覆工艺的结构。
其中,“在导线的内外侧暴露的状态下卷绕”是指,在一定长度的上述导线1多次卷绕在上述导线工艺设置部120的状态下,以不仅暴露上述导线的导线工艺设置部的外侧方向的表面,还暴露内侧方向的表面的方式卷绕。如此,当以上述导线的内外侧都暴露的状态下卷绕于上述导线工艺设置部120时,绝缘薄膜可以包覆导线中所暴露的所有表面。当然,在上述导线的表面中,与上述导线工艺设置部120接触的部分位置可能不会涂覆有绝缘薄膜。
为此,如图2所示,在本实施例中,上述导线工艺设置部120具体可以构成为包括中央部122和导线接触部124。首先,上述中央部122作为在中央形成为圆柱或多角柱形状的构成要素,提供设置上述导线接触部124的空间及结构。
接下来,如图2所示,上述导线接触部124是在上述中央部120的外侧以彼此间隔开的方式形成为多个,并且具有线性接触端,以使上述导线1以点接触的状态卷绕的构成要素。即,上述导线接触部124中,朝向外侧与上述导线接触的部分,即,接触端的形状为线形而非面形状,因此,与卷绕在其外面的上述导线形成点接触,而非线接触或面接触。
因此,如图2、图3所示,上述导线接触部124、124a可以具有长条(bar)形状,或如图4所示,可以具有板(plate)形状。当上述导线接触部124、124a具有长条形状时,如图2、图3所示,还设有将上述导线接触部124、124a连接到上述中央部122、122a的连接部126、126a。
优选地,在本实施例中,如图5所示,上述导线接触部124以上述中央部120为中心具有一定角间隔θ的放射状形态设置为多个,由此,对所卷绕的导线的所有区间可保持均匀的张力。
优选地,上述导线接触部124中,与上述导线接触的接触端具有平滑的曲面形状,从而可以防止所卷绕的导线损坏和断裂。
另外,优选地,如图1所示,根据本实施例的导线绝缘薄膜涂覆装置100还具有导线装载部130。上述导线应与绝缘薄膜涂覆工艺的进行合适地装载到上述导线工艺设置部120,上述导线装载部130执行对上述导线工艺设置部120的导线装载工艺。
即,如图1所示,上述导线装载部130设置在上述涂覆部110外部,以与绝缘薄膜涂覆工艺合适的方式,将上述导线1卷绕在上述导线工艺设置部120,即,以在上述导线设置部120卷绕的导线不会在长度方向上相互接触的方式进行卷绕。
其中,“卷绕的导线不会在长度方向上相互接触的方式进行卷绕”是指,如图8、图9所示,对于在一个导线工艺设置部120上卷绕的导线1而言,不同层的导线可以以相互交错的状态相遇并卷绕,但同一层的导线不会以并排接触的状态卷绕,而是以相互隔开一定间隔的状态卷绕。
此时,优选地,在本实施例中,上述导线1在上述导线接触部124上,以与相邻导线的间隔为10mm以下的方式卷绕,更优选地,上述导线在上述导线接触部上,以与相邻导线的间隔为0.5mm以下的方式卷绕。
为此,如图1所示,在本实施例中,上述导线装载部130具体可以构成为包括导线供应辊132、旋转部134、导线展开部136和张力调节部138。
首先,上述导线供应辊132卷绕有一定量的导线,并持续向上述导线工艺设置部120方向供应导线。因此,上述导线供应辊132构成为卷绕有一定量的导线的辊,并且可以直接按照导线供应公司供应的状态设置。
接下来,上述旋转部134为使上述导线工艺设置部120旋转,使上述导线1从上述导线供应辊132转移并卷绕到上述导线工艺设置部120,即,将上述导线转移并卷绕为工艺状态的构成要素。换句话说,上述旋转部134设置为与上述导线供应辊132相邻,且与空置的上述导线工艺设置部120结合,以使上述导线工艺设置部120旋转。据此,上述导线工艺设置部120在通过上述旋转部进行旋转的情况下,上述导线卷绕在上述导线工艺设置部120的外周面上,从而使导线装载(loading)到上述导线工艺设置部120。
接下来,上述导线展开部136为在上述导线供应辊132和上述导线工艺设置部120之间,使卷绕在上述导线工艺设置部120的导线的相对位置在上述导线工艺设置部的长度方向上进行改变,从而使上述导线不会在长度方向上紧贴的方式进行卷绕构成要素。
上述旋转部134旋转上述导线工艺设置部120,进行使上述导线卷绕在上述导线工艺设置部120外周面的工艺,并将上述导线反复卷绕在上述导线工艺设置部120的同一位置时,导线与相邻的导线在长度方向上彼此接触,导致无法使导线的所有面涂覆有绝缘薄膜。因此,上述导线展开部136在卷绕上述导线的过程中,使上述导线工艺设置部120沿长度方向移动,或者在卷绕过程中移动上述导线,使上述导线卷绕在上述导线工艺设置部上的位置不重复,而是按照一定间隔隔开。
为此,如图6所示,在本实施例中,上述导线展开部可以由移动轴承236构成,上述移动轴承236可以在上述导线工艺设置部的长度方向上移动的同时改变上述导线工艺设置部上的上述导线的卷绕位置。
另外,如图1所示,上述导线展开部136还可以由在固定位置将上述导线传送到上述导线工艺设置部的轴承136;和使上述导线工艺设置部120对上述轴承136进行相对移动的同时改变上述导线的卷绕位置的设置部移动单元(未图示)。在这种情况下,上述设置部移动单元可以设置为内置在上述旋转部134中。
接下来,上述张力调节部138设置在上述导线展开部,是用于调节卷绕在上述导线工艺设置部120的上述导线的张力,使其具有一定的张力的构成要素。即,上述张力调节部138以一定的张力拉动从上述导线供应辊132松开并卷绕在上述导线工艺设置部120的上述导线,以在上述导线卷绕在上述导线工艺设置部的状态下,调节为使上述导线具有一定的张力。
以上对将导线从上述导线装载部130转移并卷绕到上述导线工艺设置部120进行设置进行了说明,然而相反地,也可以在绝缘薄膜形成工艺完成后,将导线从上述导线工艺设置部120转移并卷绕到上述导线供应辊132上。在这种情况下,使上述导线按照与工艺设置过程相反的方向移动的方式进行工艺。
最佳实施方式
另外,如图6所示,在根据本实施例的导线绝缘薄膜涂覆装置还可以具有,将导线1从完成工艺的导线工艺设置部220b卷绕到排出用套筒242来进行排出的导线卸载部240。此情况适用于上述排出用套筒24具有与上述供应辊232不同的结构或规格的情况,具有可加快工艺速度的优点。
另外,优选地,在本实施例中,上述导线1由铜(Cu)、金(Au)、银(Ag)或铝(Al)中的任意一种构成,具体地,上述导线优选为键合导线(Bonding Wire)。
另外,优选地,在本实施例中,上述绝缘薄膜以1~100nm的厚度涂覆,具体地,上述绝缘薄膜优选包括Al2O3、TiO2和SiO2中的至少一种。
工业可用性
本发明的导线涂覆装置是,针对半导体制造领域中绝对必要的键合导线,能够迅速大量生产具有开创性新结构的键合导线的设备,因此是一种非常必要的可用于半导体产业的技术。
Claims (16)
1.一种导线绝缘薄膜涂覆装置,包括:
涂覆部,在与外部隔绝的状态下,在导线表面涂覆绝缘薄膜;
导线工艺设置部,设置为能够在所述涂覆部的内部和外部移动,在所述导线的内外侧暴露的状态下,所述导线卷绕到所述导线工艺设置部,以在所述涂覆部内部进行绝缘薄膜涂覆工艺。
2.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,所述导线工艺设置部包括:
中央部,在中央形成为柱状;
导线接触部,在所述中央部的外侧以彼此间隔开的方式形成为多个,并且具有线性接触端,使得所述导线以点接触的状态进行卷绕。
3.根据权利要求2所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线接触部,以所述中央部为中心具有一定角间隔的放射状形态设置为多个。
4.根据权利要求2所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线接触部为长条形状。
5.根据权利要求2所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线接触部为板形状。
6.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,还包括:
导线装载部,设置在所述涂覆部外部,其以所述导线不会在长度方向上相互接触的方式,将所述导线卷绕在所述导线工艺设置部。
7.根据权利要求6所述的导线绝缘薄膜涂覆装置,其特征在于,所述导线装载部包括:
导线供应辊,卷绕有一定量的导线;
旋转部,使所述导线工艺设置部旋转,将所述导线从所述导线供应辊转移并卷绕到所述导线工艺设置部,使得所述导线成为工艺状态;
导线展开部,在所述导线供应辊和所述导线工艺设置部之间,使卷绕在所述导线工艺设置部的导线的相对位置在所述导线工艺设置部的长度方向上进行改变,从而以所述导线不会在长度方向上紧贴的方式进行卷绕;
张力调节部,设置在所述导线展开部,用于调节卷绕在所述导线工艺设置部的所述导线的张力,使导线具有一定的张力。
8.根据权利要求7所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线展开部为,在所述导线工艺设置部的长度方向上移动的同时改变在所述导线工艺设置部上的所述导线的卷绕位置的移动轴承。
9.根据权利要求7所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线展开部为,
在固定位置将所述导线传送到所述导线工艺设置部的轴承;
使所述导线工艺设置部对所述轴承进行相对移动的同时改变所述导线的卷绕位置的设置部移动单元。
10.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线由铜、金、银或铝中的任意一种构成。
11.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线为键合导线。
12.根据权利要求2所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线在所述导线接触部上以与相邻导线的间隔为10mm以下的方式卷绕。
13.根据权利要求12所述的导线绝缘薄膜涂覆装置,其特征在于,
所述导线在所述导线接触部上以与相邻导线的间隔为0.5mm以下的方式卷绕。
14.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,
所述绝缘薄膜以1~100nm的厚度涂覆。
15.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,
所述绝缘薄膜包括Al2O3、TiO2和SiO2中的至少一种。
16.根据权利要求1所述的导线绝缘薄膜涂覆装置,其特征在于,
所述涂覆部为原子层沉积装置。
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