CN117525788A - Characteristic impedance reconfigurable transmission line and characteristic impedance switching method - Google Patents
Characteristic impedance reconfigurable transmission line and characteristic impedance switching method Download PDFInfo
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- H—ELECTRICITY
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
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- H01P3/081—Microstriplines
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Abstract
The invention belongs to the technical field of wireless communication systems, and discloses a characteristic impedance reconfigurable transmission line and a characteristic impedance switching method, wherein the characteristic impedance reconfigurable transmission line comprises a metal outer cavity; the device comprises an upper medium substrate, a side metal microstrip line of the upper medium substrate, a middle metal microstrip line of the upper medium substrate and a PIN diode of the upper medium substrate; an intermediate dielectric substrate, a metal microstrip line of the intermediate dielectric substrate; the PIN diode comprises a lower-layer dielectric substrate, a side metal microstrip line of the lower-layer dielectric substrate, a middle metal microstrip line of the lower-layer dielectric substrate and a PIN diode of the lower-layer dielectric substrate. A plurality of PIN diodes are arranged in parallel between the metal microstrip lines on two sides of the dielectric substrate and the middle metal microstrip line. The invention changes the distribution state of the electric field vector of the transmission line by changing the bias state of the PIN diode, realizes the reconstruction of various characteristic impedances, has lower insertion loss, wider working bandwidth and higher power capacity, and has very wide application prospect in reconfigurable circuits and systems.
Description
Technical Field
The invention belongs to the technical field of wireless communication systems, and particularly relates to a characteristic impedance reconfigurable transmission line and a characteristic impedance switching method.
Background
With the rapid development of electronic systems, miniaturization, weight saving, and integration of electronic devices are demanded. This facilitates the widespread use of planar transmission lines. Planar transmission lines are used to transmit various analog, radio frequency and digital signals on an insulated planar substrate. Common planar transmission line types are: striplines, suspended striplines, microstrip lines, coplanar waveguides, slot lines, including some variants of the corresponding types. In recent years, reconfigurable circuits have begun to become an important technical approach for miniaturization and multifunctionality of circuits. However, characteristic impedance reconfigurable transmission lines are rarely mentioned. The characteristic impedance of the conventional planar transmission line is mainly determined by parameters such as the width, dielectric constant, substrate thickness and the like of the metal strip line, and it is very difficult to control the characteristic impedance of the conventional planar transmission line in a wide range by the parameters.
The characteristic impedance reconfigurable transmission line can be applied to circuits requiring transmission lines of different impedances, such as reconfigurable matching networks. When implementing a reconfigurable impedance matching network using a quarter-wavelength impedance transformer technique, the different load impedances that are matched require quarter-wavelength impedance transformers of different characteristic impedances. In the power divider, the characteristic impedance of the quarter-wavelength impedance transformer required for different numbers of power branches is different, and thus, the characteristic impedance reconfigurable transmission line can be used to realize the power divider with reconfigurable paths. Therefore, research into characteristic impedance reconfigurable transmission lines is significant.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a characteristic impedance reconfigurable transmission line and a characteristic impedance switching method.
The invention is realized in such a way that the characteristic impedance reconfigurable transmission line comprises a metal outer cavity, an upper medium substrate, a side metal microstrip line of the upper medium substrate, a middle metal microstrip line of the upper medium substrate, a PIN diode of the upper medium substrate, a middle medium substrate metal microstrip line, a lower medium substrate, a side metal microstrip line of the lower medium substrate, a middle metal microstrip line of the lower medium substrate and a PIN diode of the lower medium substrate.
Further, the side metal microstrip line of the upper dielectric substrate and the side metal microstrip line of the lower dielectric substrate are connected with the metal outer cavity.
Further, the PIN diode of the upper medium substrate is connected between the side metal microstrip line of the upper medium substrate and the middle metal microstrip line of the upper medium substrate; the positive pole of the PIN diode of the upper medium substrate is connected with the middle metal microstrip line of the upper medium substrate, and the negative pole of the PIN diode of the upper medium substrate is connected with the side metal microstrip line of the upper medium substrate.
Further, the PIN diode of the lower medium substrate is connected between the side metal microstrip line of the lower medium substrate and the middle metal microstrip line of the lower medium substrate; the positive pole of the PIN diode of the lower medium substrate is connected with the middle metal microstrip line of the lower medium substrate, and the negative pole of the PIN diode of the lower medium substrate is connected with the side metal microstrip line of the lower medium substrate.
Further, the PIN diode of the upper dielectric substrate and the PIN diode of the lower dielectric substrate may be placed in parallel with a plurality of PIN diodes, respectively.
Further, the dielectric constants, thicknesses, and spacing distances of the upper dielectric substrate, the middle dielectric substrate, and the lower dielectric substrate are determined according to the characteristic impedance reconfigurable value to be realized.
Further, when the PIN diode on the upper or lower dielectric substrate is turned on, the middle metal microstrip line of the upper or lower dielectric substrate is communicated with the metal grounds at two sides, a conduction current between the middle microstrip line and the metal grounds at two sides forms a passage, and the electric field vector of the transmission line is mainly distributed between the metal microstrip line on the middle dielectric substrate and the metal microstrip line communicated with the upper or lower layer.
Further, when the PIN diode on the upper or lower dielectric substrate is reversely cut off, the middle metal microstrip line of the upper or lower dielectric substrate is not communicated with the metal grounds at two sides, the conduction current between the middle microstrip line and the metal grounds at two sides is broken, the middle metal microstrip line of the upper dielectric substrate and the lower dielectric substrate of the transmission line is equivalent to a parasitic microstrip line, and an electric field is mainly distributed between the metal microstrip line of the middle dielectric substrate, the side metal layers of the upper or lower dielectric substrate and the metal outer cavity.
Another object of the present invention is to provide a characteristic impedance switching method of a characteristic impedance reconfigurable transmission line, which changes the distribution state of an electric field vector in a metal cavity by changing the bias state of a PIN diode, so as to realize switching of various characteristic impedances.
Further, when only the PIN diode of the upper dielectric substrate is turned on, only the PIN diode of the lower dielectric substrate is turned on, both the PIN diodes of the upper and lower dielectric substrates are turned on, and both the PIN diodes of the upper and lower dielectric substrates are turned off reversely, the characteristic impedance reconfigurable transmission line realizes four different characteristic impedances respectively.
In combination with the technical scheme and the technical problems to be solved, the technical scheme to be protected has the following advantages and positive effects:
firstly, the characteristic impedance reconfigurable transmission line provided by the invention adopts a plurality of layers of different dielectric substrates placed in the cavity, and the distribution state of the electric field vector of the transmission line can be changed by changing the bias state of the PIN diode, so that the reconfigurability of various characteristic impedances is realized, and meanwhile, the characteristic impedance reconfigurable transmission line has lower insertion loss, wider working bandwidth and higher power capacity, and has very wide application prospect in reconfigurable circuits and systems.
The invention provides a characteristic impedance reconfigurable transmission line which has flexible characteristic impedance reconfigurable capability, low loss, broadband and higher power capacity, and is suitable for miniaturized reconfigurable microwave millimeter wave circuits and systems.
Secondly, the technical scheme of the invention fills the technical blank in the domestic and foreign industries: the invention provides a novel characteristic impedance reconfigurable transmission line, which adopts a plurality of layers of different dielectric substrates placed in a cavity, changes the distribution state of electric field vectors of the transmission line by changing the bias state of a PIN diode, realizes the reconfigurability of various characteristic impedances, has lower insertion loss, wider working bandwidth and higher power capacity, and has very wide application prospect in reconfigurable circuits and systems.
Thirdly, the invention obtains technical progress:
reconfigurability: by changing the conducting state of the PIN diode, the characteristic impedance of the transmission line can be adjusted, and the flexibility of the circuit is improved.
High integration and miniaturization: this structure allows the transmission line to achieve dynamic adjustment of impedance in a small space, and is well suited for miniaturized radio frequency and microwave integrated circuits.
Improved performance: since the impedance can be adjusted as desired, the transmission quality of the signal and the overall performance of the circuit can be optimized.
Flexibility of design: by selecting different dielectric substrate parameters and PIN diode configurations, the transmission line can be designed for different applications and frequency ranges.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram of a characteristic impedance reconfigurable transmission line provided by an embodiment of the present invention;
FIG. 2 is a graph of the characteristic impedance of a characteristic impedance reconfigurable transmission line provided by an embodiment of the present invention when all PIN diodes are reverse cut-off;
fig. 3 is a graph of characteristic impedance of the characteristic impedance reconfigurable transmission line provided by the embodiment of the invention when only the PIN diode of the underlying dielectric substrate is turned on in the forward direction;
fig. 4 is a characteristic impedance graph of the characteristic impedance reconfigurable transmission line provided by the embodiment of the invention when only the PIN diode of the upper dielectric substrate is forward conducted;
FIG. 5 is a graph of the characteristic impedance of a reconfigurable transmission line for forward conduction of all PIN diodes according to an embodiment of the present invention;
fig. 6 is a graph showing a change of characteristic impedance along with a change of a distance between an upper dielectric substrate and a middle dielectric substrate when a PIN diode of the upper dielectric substrate is only turned on in a forward direction;
in the figure: 1. a metal outer cavity; 2. a side metal microstrip line of the upper dielectric substrate; 3. an upper dielectric substrate; 4. an intermediate dielectric substrate metal microstrip line; 5. an intermediate dielectric substrate; 6. side metal microstrip lines of the lower dielectric substrate; 7. a lower dielectric substrate; 8. PIN diode of upper dielectric substrate; 9. PIN diode of the lower dielectric substrate; 10. an intermediate metal microstrip line on the upper dielectric substrate; 11. an intermediate metal microstrip line on the lower dielectric substrate.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1: reconfigurable microstrip line power divider
And the PIN diodes which are arranged on the upper layer and the lower layer and can control the conducting state are distributed beside the corresponding microstrip line by using a three-layer dielectric substrate structure.
The side microstrip lines of the upper and lower substrates are designed to be grounded, and the middle microstrip line is designed to be a signal transmission line.
The characteristic impedance of the transmission line can be changed by controlling the on and off of the PIN diodes on the upper and lower substrates, so that good impedance matching can be realized for different paths of power dividers.
For example, the transmission line equivalent characteristic impedance is maximum when all PIN diodes are off, and minimum when all PIN diodes are on.
This structure can be integrated into the radio frequency front end module for selection of different signal channels.
The technical characteristics are as follows:
the rapid adjustment of the number of the power divider paths in the microwave frequency range is realized.
The equivalent characteristic impedance of the transmission line can be dynamically adjusted without changing other circuit parameters.
The phased array antenna is suitable for radar systems, satellite communications and wireless communications.
Example 2: tunable filter
A three-layer dielectric substrate structure is also adopted, each layer is provided with a microstrip line, and PIN diodes are added on two sides to serve as tuning elements.
By controlling the state (on or off) of the PIN diode, the degree of coupling between the microstrip lines can be varied, thereby adjusting the passband and stopband characteristics of the filter.
Microstrip lines on the upper and lower dielectric substrates can be designed as resonant cavities or as part of transmission lines, and the filtering effect is realized through the interaction between the resonant cavities and the transmission lines.
The filter can be designed as a low-pass filter, a band-pass filter, a high-pass filter or a band-stop filter, and the specific filtering characteristic is customized according to actual requirements.
The technical characteristics are as follows:
the method can realize the rapid reconstruction of frequency and is suitable for different communication standards and signal environments.
Compared with the traditional fixed frequency filter, the filter has higher flexibility and adaptability.
May be integrated into a radio frequency transceiver for use in a multi-mode, multi-band wireless communication device.
Two embodiments provided by the present invention demonstrate how to design a radio frequency assembly with dynamic tuning capabilities using the principles of a characteristic impedance reconfigurable transmission line. These components can greatly improve the performance and flexibility of modern wireless communication and radar systems.
The characteristic impedance provided by the invention can reconstruct the design and function of the transmission line. Such designs are commonly used in the field of Radio Frequency (RF) and microwave engineering to adjust the impedance of a transmission line under different operating conditions. The following is a detailed explanation of these claims and the technological advances they bring:
1) The transmission line is formed by: the transmission line is described as being composed of three layers of dielectric substrates, each layer having lateral and medial metallic microstrip lines, and being connected by PIN diodes. The parallel arrangement of the PIN diodes allows to change the characteristic impedance of the transmission line by changing its conducting state.
2) Connection of the outer cavity: the connection mode of the side metal microstrip lines of the upper and lower dielectric substrates and the metal outer cavity is described. This connection is to provide electromagnetic shielding or to provide a ground reference point for the microstrip line.
3) PIN diode connection mode of upper dielectric substrate: detailed description is given of how the PIN diode is connected to the microstrip line of the upper dielectric substrate, including the polarity of the connection.
4) PIN diode connection mode of lower dielectric substrate: similar to claim 3, it is described how the PIN diode of the underlying dielectric substrate is connected.
5) Parallel configuration of PIN diodes: it is pointed out that the PIN diodes on the upper and lower dielectric substrates are realized by a plurality of PIN diodes connected in parallel, which is to prevent energy from leaking into the metal cavity from the gap between the upper/lower substrate side metal microstrip line and the middle metal microstrip line when the PIN diodes are turned on, and at the same time the transmission line can bear higher current or power.
6) Physical parameters of the dielectric substrate: it is described how the dielectric constant, thickness and mutual spacing of each dielectric substrate can be selected according to the desired characteristic impedance.
7) Electric field distribution in the PIN diode conducting state: it is described how the current forms a path between the middle metal microstrip line and the two sides metal ground when the PIN diode is turned on, changing the distribution of the electric field.
8) Electric field distribution in the PIN diode off state: it is described that when the PIN diode is turned off, the middle metal microstrip line is not connected to both sides of the metal ground, resulting in a change of electric field distribution.
The design of such a transmission line provides an efficient way to dynamically adjust the impedance of the radio frequency transmission line, which is important for adapting to different operating frequencies and environmental conditions, improving the adaptability and performance of the circuit.
Aiming at the problems existing in the prior art, the invention provides a characteristic impedance reconfigurable transmission line and a characteristic impedance switching method.
As shown in fig. 1, the characteristic impedance reconfigurable transmission line provided by the embodiment of the invention comprises a metal outer cavity 1, an upper dielectric substrate 3, a side metal microstrip line 2 of the upper dielectric substrate, a middle metal microstrip line 10 of the upper dielectric substrate, a PIN diode 8 of the upper dielectric substrate, a middle dielectric substrate 5, a middle dielectric substrate metal microstrip line 4, a lower dielectric substrate 7, a side metal microstrip line 6 of the lower dielectric substrate, a middle metal microstrip line 11 of the lower dielectric substrate, and a PIN diode 9 of the lower dielectric substrate;
the PIN diode 8 of the upper medium substrate is connected between the side metal microstrip line 2 of the upper medium substrate and the middle metal microstrip line 10 of the upper medium substrate, the PIN diode 9 of the lower medium substrate is connected between the side metal microstrip line 6 of the lower medium substrate and the middle metal microstrip line 11 of the lower medium substrate, and the PIN diode 8 of the upper medium substrate and the PIN diode 9 of the lower medium substrate can be respectively placed in parallel by adopting a plurality of PIN diodes; the dielectric constants, thicknesses, and substrate-to-substrate spacing distances of the upper dielectric substrate 3, the middle dielectric substrate 5, and the lower dielectric substrate 7 may be determined according to the characteristic impedance reconfigurable values to be achieved.
The working principle of the characteristic impedance reconfigurable transmission line provided by the invention is as follows:
when the PIN diode on the upper or lower medium substrate is conducted in the forward direction, the middle metal microstrip line of the upper or lower medium substrate is communicated with the side metal microstrip line of the upper or lower medium substrate, the middle metal microstrip line of the upper or lower medium substrate and the conduction current of the side metal microstrip line of the upper or lower medium substrate form a passage, at the moment, the middle metal microstrip line of the upper or lower medium substrate becomes a ground wire, and the electric field vector of the transmission line is mainly distributed between the middle metal microstrip line of the middle medium substrate and the middle metal microstrip line of the upper or lower medium substrate;
when the PIN diode on the upper or lower dielectric substrate is reversely cut off, the middle metal microstrip line of the upper or lower dielectric substrate is not communicated with the side metal microstrip line of the upper or lower dielectric substrate, at the moment, the middle metal microstrip line of the upper or lower dielectric substrate is equivalent to a parasitic microstrip line, and the electric field vector of the transmission line is mainly distributed between the middle dielectric substrate metal microstrip line, the side metal microstrip line of the upper or lower dielectric substrate and the metal outer cavity.
When only the PIN diode of the upper medium substrate is conducted, only the PIN diode of the lower medium substrate is conducted, the PIN diodes of the upper medium substrate and the lower medium substrate are simultaneously conducted, and the PIN diodes of the upper medium substrate and the lower medium substrate are simultaneously reversely cut off, the characteristic impedance reconfigurable transmission line can respectively realize four different characteristic impedances; in addition, the characteristic impedance reconfigurable transmission line can realize various characteristic impedances when the PIN diodes at different numbers and different positions are adjusted to be turned on and turned off reversely.
The embodiment of the invention provides a characteristic impedance reconfigurable transmission line, which comprises a metal outer cavity 1, an upper medium substrate 3, a side metal microstrip line 2 of the upper medium substrate, a middle metal microstrip line 10 of the upper medium substrate, a PIN diode 8 of the upper medium substrate, a middle medium substrate 5, a middle medium substrate metal microstrip line 4, a lower medium substrate 7, a side metal microstrip line 6 of the lower medium substrate, a middle metal microstrip line 11 of the lower medium substrate and a PIN diode 9 of the lower medium substrate;
the PIN diode 8 of the upper medium substrate is connected between the side metal microstrip line 2 of the upper medium substrate and the middle metal microstrip line 10 of the upper medium substrate, the PIN diode 9 of the lower medium substrate is connected between the side metal microstrip line 6 of the lower medium substrate and the middle metal microstrip line 11 of the lower medium substrate, and the PIN diode 8 of the upper medium substrate and the PIN diode 9 of the lower medium substrate are respectively arranged in parallel by adopting a plurality of PIN diodes;
the dielectric constants of the upper dielectric substrate 3, the middle dielectric substrate 5 and the lower dielectric substrate 7 are 3.5, and the thicknesses are 0.254mm. The distance between the upper medium substrate 3 and the middle medium substrate 5 is 1.9mm, and the distance between the lower medium substrate 3 and the middle medium substrate 5 is 0.25mm; the width of the metal microstrip line of the intermediate dielectric substrate is 2.1mm.
The characteristic impedance reconfigurable transmission line structure of this embodiment is realized using an RF-35 dielectric substrate having a loss tangent of 0.018, as shown in fig. 1. Switching of various characteristic impedances is achieved by changing the bias state of the PIN diode.
Fig. 2 is a characteristic impedance curve of the characteristic impedance reconfigurable transmission line of the present embodiment when all PIN diodes are turned off reversely. It can be seen from the figure that the characteristic impedance of the characteristic impedance reconfigurable transmission line is 84.3 ohms at a frequency of 4GHz-12 GHz.
Fig. 3 is a characteristic impedance curve of the characteristic impedance reconfigurable transmission line of the present embodiment when only the PIN diode of the underlying dielectric substrate is turned on in the forward direction. It can be seen from the figure that the characteristic impedance of the characteristic impedance reconfigurable transmission line is 50 ohms at a frequency of 4GHz-12 GHz.
Fig. 4 is a characteristic impedance curve of the characteristic impedance reconfigurable transmission line of the present embodiment when only the PIN diode of the upper dielectric substrate is turned on in the forward direction. It can be seen from the figure that the characteristic impedance of the characteristic impedance reconfigurable transmission line is 83 ohms in the frequency range of 4GHz-12 GHz.
Fig. 5 is a characteristic impedance curve of the characteristic impedance reconfigurable suspension strip line of the present embodiment when all PIN diodes are forward-turned on. It can be seen from the figure that the characteristic impedance of the reconfigurable transmission line is about 33.5 ohms at a frequency of 4GHz-12 GHz.
Fig. 6 is a graph showing the characteristic impedance of the reconfigurable transmission line according to the present embodiment, when only the PIN diode of the upper dielectric substrate is turned on in the forward direction, as a function of the distance between the upper dielectric substrate and the middle dielectric substrate. As can be seen from the figure, the characteristic impedance of the characteristic impedance reconfigurable transmission line is changed from 83 ohms to 10 ohms when the distance between the upper dielectric substrate and the middle dielectric substrate is changed from 0 to 4mm.
The foregoing is merely illustrative of specific embodiments of the present invention, and the scope of the invention is not limited thereto, but any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention will be apparent to those skilled in the art within the scope of the present invention.
Claims (10)
1. A characteristic impedance reconfigurable transmission line comprising a metallic outer cavity; the device comprises an upper medium substrate, a side metal microstrip line of the upper medium substrate, a middle metal microstrip line of the upper medium substrate and a PIN diode of the upper medium substrate; an intermediate dielectric substrate, a metal microstrip line of the intermediate dielectric substrate; a lower dielectric substrate, a side metal microstrip line of the lower dielectric substrate, a middle metal microstrip line of the lower dielectric substrate, and a PIN diode of the lower dielectric substrate; a plurality of PIN diodes are arranged in parallel between the metal microstrip lines on two sides of the dielectric substrate and the middle metal microstrip line.
2. The transmission line of claim 1, wherein the side metal microstrip line of the upper dielectric substrate and the side metal microstrip line of the lower dielectric substrate are connected to the metal outer cavity.
3. The characteristic impedance reconfigurable transmission line of claim 1, wherein the PIN diode of the upper dielectric substrate is connected between the side metal microstrip line of the upper dielectric substrate and the middle metal microstrip line of the upper dielectric substrate; the positive pole of the PIN diode of the upper medium substrate is connected with the middle metal microstrip line of the upper medium substrate, and the negative pole of the PIN diode of the upper medium substrate is connected with the side metal microstrip line of the upper medium substrate.
4. The characteristic impedance reconfigurable transmission line of claim 1, wherein the PIN diode of the lower dielectric substrate is connected between a side metal microstrip line of the lower dielectric substrate and an intermediate metal microstrip line of the lower dielectric substrate; the positive pole of the PIN diode of the lower medium substrate is connected with the middle metal microstrip line of the lower medium substrate, and the negative pole of the PIN diode of the lower medium substrate is connected with the side metal microstrip line of the lower medium substrate.
5. The characteristic impedance reconfigurable transmission line of claim 1, wherein the PIN diode of the upper dielectric substrate and the PIN diode of the lower dielectric substrate are respectively placed in parallel using a plurality of PIN diodes.
6. The transmission line of claim 1, wherein the dielectric constant, thickness, and spacing of the upper dielectric substrate, the middle dielectric substrate, and the lower dielectric substrate are determined based on the desired characteristic impedance reconfigurable value.
7. The transmission line with reconfigurable characteristic impedance according to claim 1, wherein when the PIN diode on the upper or lower dielectric substrate is turned on, the middle metal microstrip line of the upper or lower dielectric substrate is in communication with the metal grounds on both sides, the conduction current between the middle microstrip line and the metal grounds on both sides forms a path, and the electric field vector of the transmission line is mainly distributed between the metal microstrip line on the middle dielectric substrate and the metal microstrip line in communication with the upper or lower layer.
8. The transmission line of claim 1, wherein when the PIN diode on the upper or lower dielectric substrate is turned off reversely, the middle metal microstrip line of the upper or lower dielectric substrate is not connected to the metal grounds on both sides, the conduction current between the middle microstrip line and the metal grounds on both sides is broken, the middle metal microstrip line of the upper dielectric substrate and the lower dielectric substrate of the transmission line is equivalent to a parasitic microstrip line, and the electric field is mainly distributed between the metal microstrip line of the middle dielectric substrate and the side metal layers and the metal outer cavities of the upper or lower dielectric substrate.
9. A characteristic impedance switching method of a characteristic impedance reconfigurable transmission line according to any one of claims 1 to 8, wherein switching of a plurality of characteristic impedances is achieved by changing the distribution state of electric field vectors in a metal cavity by changing the bias state of a PIN diode.
10. The method for switching characteristic impedance of characteristic impedance reconfigurable transmission line according to claim 9, wherein the characteristic impedance reconfigurable transmission line realizes four different characteristic impedances when only PIN diodes of upper dielectric substrates are turned on, only PIN diodes of lower dielectric substrates are turned on, PIN diodes of upper and lower dielectric substrates are both turned on, and PIN diodes of upper and lower dielectric substrates are both turned off reversely.
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