CN117517217A - Magnetization state reversal demonstration device and method for thin film on magnetic wafer - Google Patents
Magnetization state reversal demonstration device and method for thin film on magnetic wafer Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000005415 magnetization Effects 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title claims description 6
- 238000003384 imaging method Methods 0.000 claims abstract description 68
- 230000005374 Kerr effect Effects 0.000 claims abstract description 18
- 238000005286 illumination Methods 0.000 claims abstract description 14
- 230000010287 polarization Effects 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 10
- 238000004458 analytical method Methods 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 88
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- 230000005389 magnetism Effects 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
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- 238000010291 electrical method Methods 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- 238000000053 physical method Methods 0.000 description 1
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- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/218—Measuring properties of electrooptical or magnetooptical media
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Abstract
The invention provides a magneto-optical Kerr effect-based magnetic wafer large-field imaging method and an imaging device, wherein the method comprises the following steps: displaying and imaging the internal magnetization state of the magnetic wafer on a computer through a magneto-optical Kerr imaging light path; specifically, the magneto-optical kerr imaging light path comprises a polarized illumination light path and a polarized imaging light path, the polarized illumination light path is used for carrying out irradiation treatment on the magnetic wafer, the polarized imaging light path collects light reflected by the magnetic wafer to form an image, the imaging light path transmits the image to a computer, and the computer displays the image. The invention realizes the large-field imaging of the magnetic wafer for the first time, can improve the rapid detection of the properties of the magnetic wafer, and has important significance for the development and application of the magnetic wafer in the industrial field.
Description
The present application is a divisional application of chinese invention application filed on 2021, 5-month 19, with application number CN202110548994.0, entitled "magnetic wafer large field imaging method and imaging apparatus based on magneto-optical kerr effect".
Technical Field
The invention belongs to the technical field of physical measurement and demonstration equipment, in particular relates to the technical field of wafer magnetization state imaging, and particularly relates to a magneto-optical Kerr effect-based large-field imaging method and device for a magnetic wafer.
Background
Wafers are basic raw materials for manufacturing semiconductor devices and are generally classified into 2 inch, 4 inch, 6 inch, 8 inch, and 12 inch specifications. The magnetic wafer is obtained by plating a magnetic film on the surface of the wafer by a vacuum evaporation method, an electrodeposition method, a sputtering method and the like, can be used for manufacturing a spin electron chip, not only utilizes the charge property of electrons, but also utilizes and operates the spin characteristic of the electrons, has the advantages of high integration and high energy efficiency, can be widely applied to modern information technology, and has huge application and market prospect. The magnetism of the wafer is detected by an optical method, and the method has the advantages of no damage, higher detection speed than electrical methods and the like. However, currently, optical detection of magnetic changes of a magnetic wafer mainly uses laser to perform single-point test, and combines a scanning imaging technology to form a multi-point image. In the industrial production, the method is time-consuming and labor-consuming, has low efficiency, and cannot quickly detect the performance of the magnetic wafer. On the other hand, spin is a rather unfamiliar concept for most students, because electron spin cannot be intuitively demonstrated at present, which brings great obstacle to teaching of spintronics and popularization of related knowledge, and is unfavorable for development of spintronics.
Disclosure of Invention
To solve the above problems, a first aspect of the present invention provides a magnetic wafer large field imaging method based on magneto-optical kerr effect, the method comprising: displaying and imaging the internal magnetization state of the magnetic wafer on a computer through a magneto-optical imaging light path, wherein the magneto-optical Kerr imaging light path uses a magneto-optical Kerr effect to perform imaging; the magneto-optical Kerr imaging optical path comprises a polarized illumination optical path and a polarized imaging optical path, the polarized illumination optical path is used for irradiating the magnetic wafer, illumination light provided by the polarized illumination optical path is linearly polarized light, the polarized imaging optical path collects light reflected by the magnetic wafer to form an image, the polarized imaging optical path can process polarized signals carried by the reflected light and conduct space resolution imaging on a polarized state, the polarized imaging optical path transmits the image to a computer, and the computer displays the image.
Preferably, the polarized illumination light path includes a light source and a polarizer, wherein the polarizer refers to an optical element and a lens element capable of converting unpolarized light into linearly polarized light; the polarized imaging light path comprises a polarization analyzer, a lens group II and a camera;
the light source provides incident light, the incident light sequentially passes through the polarizer, the lens element and irradiates the magnetic wafer, and the reflected light sequentially passes through the analyzer, the lens group II and the camera; or the light source provides incident light, the incident light sequentially passes through the lens element, the polarizer and irradiates the magnetic wafer, and the reflected light sequentially passes through the analyzer, the lens group II and the camera.
Preferably, the computer display image adopts a difference method for enhancing imaging effect.
Preferably, the analyzer is sized such that light reflected by the magnetic wafer passes through the analyzer.
The second aspect of the invention provides a magnetic wafer large-field imaging device based on magneto-optical Kerr effect, which comprises a magneto-optical Kerr imaging light path, a magnetic wafer and a computer; the magneto-optical Kerr imaging light path comprises a polarized illumination light path and a polarized imaging light path;
the polarized illumination light path is used for providing incident light with linear polarization characteristics and carrying out irradiation treatment on the magnetic wafer;
the polarization imaging light path is used for collecting light reflected by the magnetic wafer, carrying out polarization analysis on polarization information of reflected light and forming an image;
the computer is used for displaying the image.
The polarized illumination light path provides stable and uniform incident light, and can improve imaging effect.
Preferably, the polarized illumination light path includes a light source, a polarizer, and a lens element; the polarized imaging light path comprises a polarization analyzer, a lens group II and a camera;
one side of the light source is provided with a polarizer, the other side of the polarizer is provided with a lens element, light passing through the lens element irradiates onto the magnetic wafer, light reflected by the magnetic wafer passes through the analyzer, the other side of the analyzer is sequentially provided with a lens group II and a camera, and the camera is connected with a computer; or, one side of the light source is provided with a lens element, the other side of the lens element is provided with a polarizer, light passing through the polarizer irradiates onto the magnetic wafer, light reflected by the magnetic wafer passes through the analyzer, the other side of the analyzer is provided with a lens group II and a camera in sequence, and the camera is connected with a computer.
Preferably, the polarizer and the analyzer are rotatably arranged or fixedly arranged.
Preferably, the lens element is selected from a lens or a lens group I.
Preferably, the length of the lens group II is 0.1-1 m.
Preferably, the focal length of the lens group II is 0.06-3 m.
Preferably, the lens group II is selected from telecentric lens groups.
Preferably, the lens group II is selected from tele lens groups.
The third aspect of the present invention provides a method for using the device, including a method for demonstrating magnetization state inversion of a thin film on a magnetic wafer, comprising the specific steps of: the method comprises the steps of turning on a light source, displaying an image of a magnetic wafer on a computer, enabling a magnet to be close to one side of the magnetic wafer, which is far away from a magneto-optical Kerr imaging light path, and displaying a magnet movement path on the computer when the magnet moves in a range corresponding to the magnetic wafer; the other end of the magnet is close to the magnetic wafer, and the computer displays the imaging state of the magnetic wafer to restore the original state.
In a fourth aspect, the present invention provides the use of a magneto-optical kerr effect magnetic wafer large field imaging apparatus as described.
Preferably, the application is specifically: and (3) placing the magnetic wafer in a magnetic field, changing the polarity and strength of the magnetic field, and obtaining the magnetization state information of the magnetic film layer of the corresponding magnetic wafer under different magnetic fields through imaging by the device, so as to finally obtain the global magnetic field-magnetic layer magnetization corresponding relation of the magnetic wafer.
The application is for teaching demonstration, writing or painting.
The analyzer employs a linear polarizer. When reflected light is transmitted through such an optical element, the polarization angle of the emitted light and the relative angle of the analyzer determine the intensity of the transmitted light.
Preferably, the diameter or side length of the magnet near one end surface of the magnetic wafer is 10 μm to 1cm.
Preferably, a control part is connected to one end of the magnet far away from the magnetic wafer, and is used for controlling the movement of the magnet by an operator.
Compared with the prior art, the invention has the advantages that:
(1) The invention provides a magneto-optical Kerr effect-based magnetic wafer large-field imaging method, which realizes the magnetic wafer large-field imaging through a magneto-optical Kerr optical path.
(2) The invention provides a magnetic wafer large-field imaging device based on magneto-optical Kerr effect, which can realize large-scale imaging of wafer magnetism, and can provide stable and uniform light source and ensure good polarization linearity.
(3) The magnetic wafer large-field imaging device based on the magneto-optical Kerr effect can be widely used for displaying the magnetization state in the magnetic wafer in an imaging mode, can assist teaching, can intuitively display the working principle of the magnetic wafer for students, and can intuitively understand abstract concepts and accelerate the students to understand spin electron concepts. Students can write and draw on the imaging device personally, can erase at any time, increase experience sense and learning interest, and can be used for popularizing spintronic related knowledge.
Drawings
FIG. 1 is a schematic diagram of a magnetic wafer large field imaging device based on magneto-optical Kerr effect;
FIG. 2 is a schematic diagram of another magnetic wafer large field imaging apparatus based on magneto-optical Kerr effect;
FIG. 3 is a flow chart of a method of using a magnetic wafer large field imaging device based on magneto-optical Kerr effect;
FIG. 4 is a raw state image of a magnetic wafer displayed on a computer;
fig. 5 is an image of a magnetic wafer after magnetic inversion displayed on a computer.
The device comprises a 1 electron spin module, 11, a light source, 12, a polarizer, 13, a lens element, 14, a magnetic wafer, 15, an analyzer, 16, a lens group II,17, a camera, 2 and a computer.
Detailed Description
The technical scheme of the invention is further described in detail below with reference to specific embodiments.
Referring to fig. 1, the present invention provides a magneto-optical kerr effect magnetic wafer large-field imaging-based device, which comprises an electron spin module 1 and a computer 2, wherein the electron spin module 1 comprises a light source 11, a polarizer 12, a lens element 13, a magnetic wafer 14, an analyzer 15, a lens group II 16 and a camera 17. The surface of the magnetic wafer 14 is plated with a magnetic thin film having perpendicular magnetic anisotropy. The thickness of the magnetic film is 0.1 nm-100 nm.
The light source 11 provides incident light, the incident light sequentially passes through the polarizer 12 to obtain linearly polarized light, the linearly polarized light passes through the lens element 13 and irradiates the magnetic film of the magnetic wafer 14, the light is reflected by the magnetic wafer, the polarization angle of the light changes, the light sequentially passes through the polarization analyzer 15, the lens group II 16 and the camera 17, the camera 17 is connected with the computer 3, and imaging is displayed on the computer 3.
The light source 11 is not particularly limited, and an LED lamp, a mercury lamp, a xenon lamp, or the like may be selected.
The analyzer 15 is a linear polarizer, and when the reflected light is transmitted through such an optical element, the relative angle of the polarization angle of the emitted light and the analyzer determines the intensity of the transmitted light.
The lens element is a lens or a lens group I, which is not particularly limited.
The length of the lens group II 16 is 0.1-1 m.
The focal length of the lens group II 16 is 0.06-3 m.
In one embodiment, the lens group II 16 is selected from telecentric lens groups.
In another embodiment, the lens group II 16 is selected from tele lens groups.
The analyzer 15 is sized to ensure that all of the light reflected from the magnetic wafer 14 passes through the analyzer 15.
In one embodiment, the polarizer 12 and the analyzer 15 are fixedly arranged.
In another embodiment, the polarizer 12 and the analyzer 15 are rotatably disposed, and the angles of the polarizer 12 and the analyzer 15 can be adjusted.
As shown in fig. 2, the positions of the lens element 13 and the polarizer 12 are interchanged, that is, the light source 11 provides incident light, the incident light sequentially passes through the lens element 13 and the polarizer 12, and irradiates the magnetic film of the magnetic wafer 14, the light is reflected by the magnetic wafer, the polarization angle of the light is changed, and sequentially passes through the analyzer 15, the lens group II 16 and the camera 17, and the camera 17 is connected with the computer 3, so that imaging is displayed on the computer 3.
The computer 2 images and image processing at the time of presentation is used as a difference method. The difference making method is an image processing method, and the difference making method is a mode of subtracting brightness values of pixels corresponding to two pictures one by one, so that information of relative change of the two pictures is more highlighted, and finally, the noise level of the pictures is reduced. The difference method can be used for eliminating noise and highlighting the magnetic flipping phenomenon. The imaging device is used for large-field imaging of the magnetic wafer, and meanwhile, the imaging is required to be clear, so that the effect is more remarkable in imaging and demonstration.
The camera 17 is not particularly limited in the present invention, and preferably, the camera 17 is a CMOS camera.
The invention provides application of the device, in particular to that a magnetic wafer is placed in a magnetic field, the polarity and strength of the magnetic field are changed, magnetization state information of a magnetic film layer of the corresponding magnetic wafer under different magnetic fields is obtained through imaging of the device, and finally the global magnetic field-magnetic layer magnetization corresponding relation of the wafer is obtained, so that magnetic information such as magnetization uniformity, coercive field and the like is extracted.
The given manner of magnetic field is not limited in the application of the invention. Preferably, the magnetic field is generated by an electromagnet or a permanent magnet.
As shown in fig. 3, the present invention provides a method for using a magneto-optical kerr effect-based magnetic wafer large-field imaging device, comprising the following steps: the light source 11 is turned on, the directions of the polarizer 12 and the analyzer 15 are adjusted, the original image of the magnetic wafer 14 is displayed on the computer 3, one end of the magnet is close to one side of the magnetic wafer 14 away from the analyzer 15, when the magnet moves in a range corresponding to the magnetic wafer 14, the corresponding area on the magnetic wafer 14 is electronically reversed, and the movement path and path color change of the magnet are displayed on the computer 3. The computer 3 displays that the color of the magnetic wafer 14 changes in brightness and darkness to represent the change of the magnetization direction of the magnetic film layer on the magnetic wafer 14. When the other end of the magnet approaches the magnetic wafer 14, the magnetism of the magnetic wafer 14 is restored to the original state, the computer 3 displays the original image of the magnetic wafer 14, the original brightness is restored, and the change of the magnetic film on the magnetic wafer 14 is reversible, which is also the reason that the spintronic chip can erase and write information infinitely after being made into a storage, and the service life can be kept quite long.
The magnet is a magnet having a size of 10 μm to 1cm near one end surface of the magnetic wafer 14.
The other end of the magnet is connected with a control part, and because the volume of the magnet is small, the magnet is inconvenient to directly control by hand, the control part can be arranged at one end of the magnet, and an operator can control the movement of the magnet through the control part.
In addition, another magnet with large surface area can be used to close to the magnetic wafer 14, so that the magnetism of the magnetic wafer 14 is restored to the original state.
Example 1
The embodiment provides a magneto-optical kerr effect magnetic wafer-based large-field imaging device, which comprises an electron spin module 1 and a computer 2, wherein the electron spin module 1 comprises a light source 11, a polarizer 12, a lens, a magnetic wafer 14, an analyzer 15, a lens group II 16 and a camera I17. The surface of the magnetic wafer 14 is plated with a magnetic thin film having perpendicular magnetic anisotropy.
The light source 11 provides incident light, the incident light sequentially passes through the polarizer 12 and the lens, irradiates the magnetic film of the magnetic wafer 14, reflects light through the magnetic wafer, changes the polarization angle of the light, sequentially passes through the analyzer 15, the lens group II 16 and the camera 17, and the camera 17 is connected with the computer 3 to display imaging on the computer 3.
The lens group II 16 is a telecentric lens group.
The polarizer 12 and the analyzer 15 are rotatably arranged, and the angles of the polarizer 12 and the analyzer 15 can be adjusted.
The image processing of the computer is used as a difference method.
The camera 17 of the present embodiment is a CMOS camera.
The application method of the magneto-optical Kerr effect-based magnetic wafer large-field imaging device of the embodiment comprises the following steps: the light source 11 is turned on, as shown in fig. 4, an image of the magnetic wafer 14 is displayed on the computer 3, the magnet is close to one side of the magnetic wafer 14 away from the analyzer 15, when the magnet moves within a range corresponding to the magnetic wafer 14, the corresponding area on the magnetic wafer 14 is electronically reversed, a path of the magnet movement is displayed on the computer 3, and the path color becomes clear, as shown in fig. 5. Therefore, the device can image the magnetic wafer in a large visual field, and can intuitively display the working principle of the magnetic wafer.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be apparent to one skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some of the technical features thereof; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (8)
1. The device is characterized by comprising a magneto-optical Kerr imaging light path, a magnetic wafer and a computer; the magneto-optical Kerr imaging light path comprises a polarized illumination light path and a polarized imaging light path;
the polarized illumination light path is used for providing incident light with linear polarization characteristics and carrying out irradiation treatment on the magnetic wafer;
the polarization imaging light path is used for collecting light reflected by the magnetic wafer, carrying out polarization analysis on polarization information of reflected light and forming an image;
the device also comprises a magnet, wherein the magnet is close to one side of the magnetic wafer, which is far away from the magneto-optical Kerr imaging light path, one end of the magnet is close to the magnetic wafer, the other end of the magnet is connected with a control part, and the control part is used for an operator to control the magnet to move in a range corresponding to the magnetic wafer;
the computer can display the movement path of the magnet.
2. The apparatus according to claim 1, wherein: the polarized illumination light path comprises a light source, a polarizer and a lens element; the polarized imaging light path comprises a polarization analyzer, a lens group II and a camera;
the light reflected by the magnetic wafer passes through the polarization analyzer, the lens group II and the camera are sequentially arranged on the other side of the polarization analyzer, the camera is connected with the computer, and one end of the magnet is close to one side of the magnetic wafer far away from the polarization analyzer;
or, one side of the light source is provided with the lens element, the other side of the lens element is provided with the polarizer, light passing through the polarizer irradiates the magnetic wafer, light reflected by the magnetic wafer passes through the analyzer, the other side of the analyzer is sequentially provided with the lens group II and the camera, the camera is connected with the computer, and one end of the magnet is close to one side of the magnetic wafer away from the analyzer.
3. The apparatus according to claim 2, wherein: the polarizer and the analyzer are rotatably arranged or fixedly arranged.
4. The apparatus according to claim 1, wherein: the diameter or side length of the magnet near one end surface of the magnetic wafer is 10 mu m-1 cm.
5. The apparatus according to claim 1, wherein: the surface of the magnetic wafer is plated with a layer of magnetic film with perpendicular magnetic anisotropy.
6. Use of a magneto-optical kerr effect magnetic wafer large field imaging apparatus as defined in any one of claims 1 to 5.
7. The use according to claim 6, characterized in that: the application is for teaching demonstration, writing or painting.
8. A method for demonstrating magnetization state reversal of a thin film on a magnetic wafer, using the apparatus according to any one of claims 1 to 5, comprising the steps of:
the light source is turned on, an image of the magnetic wafer is displayed on the computer, the magnet is close to one side of the magnetic wafer, which is far away from the magneto-optical Kerr imaging light path, and when the magnet moves in a range corresponding to the magnetic wafer, a magnet movement path can be displayed on the computer; the other end of the magnet is close to the magnetic wafer, and the imaging state of the magnetic wafer can be displayed on a computer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311523628.5A CN117517217A (en) | 2021-05-19 | 2021-05-19 | Magnetization state reversal demonstration device and method for thin film on magnetic wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110548994.0A CN113884443A (en) | 2021-05-19 | 2021-05-19 | Magnetic wafer large-view imaging method and imaging device based on magneto-optical Kerr effect |
| CN202311523628.5A CN117517217A (en) | 2021-05-19 | 2021-05-19 | Magnetization state reversal demonstration device and method for thin film on magnetic wafer |
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| CN1075024A (en) * | 1992-01-29 | 1993-08-04 | 松下电器产业株式会社 | Recording and reproducing apparatus |
| CN2886552Y (en) * | 2005-05-19 | 2007-04-04 | 上海复旦天欣科教仪器有限公司 | Surface magneto-optical Kerr device |
| CN101140319B (en) * | 2007-10-31 | 2010-05-12 | 中山大学 | Periodic time dynamic magnetized light-magnetic-synchro magneto-optic test method |
| CN101271059A (en) * | 2008-04-30 | 2008-09-24 | 复旦大学 | Large field longitudinal surface magnetooptical Kerr effect measuring apparatus |
| CN102253350B (en) * | 2011-05-03 | 2014-01-29 | 西安交通大学 | Switching arc magnetic field measurement device and method based on magneto-optic imaging |
| IL243712A0 (en) * | 2016-01-20 | 2016-04-21 | Yeda Res & Dev | Devices and methods to measure small displacements |
| CN107525769B (en) * | 2016-11-30 | 2021-04-06 | 山东大学 | Method for improving magnetic domain imaging quality by optimizing azimuth angle of polarizer |
| US10551320B2 (en) * | 2017-01-30 | 2020-02-04 | Kla-Tencor Corporation | Activation of wafer particle defects for spectroscopic composition analysis |
| US11043239B2 (en) * | 2019-03-20 | 2021-06-22 | Kla Corporation | Magneto-optic Kerr effect metrology systems |
| CN111257802B (en) * | 2020-01-16 | 2022-06-21 | 上海科技大学 | Method for realizing ferromagnetic magnetic domain morphology construction by utilizing magneto-optical effect |
| CN111239653A (en) * | 2020-02-10 | 2020-06-05 | 致真精密仪器(青岛)有限公司 | Magnetic imaging device and imaging method based on diamond NV color center and Kerr effect |
| CN111766550A (en) * | 2020-07-08 | 2020-10-13 | 致真精密仪器(青岛)有限公司 | Three-dimensional magnetic field probe station test system and test method |
| CN112037270A (en) * | 2020-09-04 | 2020-12-04 | 北京航空航天大学 | Magneto-optical Kerr image registration correction method and system and microscope system |
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