CN117501430A - 一种电容、集成电路、射频电路以及电子设备 - Google Patents
一种电容、集成电路、射频电路以及电子设备 Download PDFInfo
- Publication number
- CN117501430A CN117501430A CN202180099523.4A CN202180099523A CN117501430A CN 117501430 A CN117501430 A CN 117501430A CN 202180099523 A CN202180099523 A CN 202180099523A CN 117501430 A CN117501430 A CN 117501430A
- Authority
- CN
- China
- Prior art keywords
- electrode
- capacitor
- semiconductor substrate
- finger
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 217
- 239000004065 semiconductor Substances 0.000 claims abstract description 179
- 230000005669 field effect Effects 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000007667 floating Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 230000003071 parasitic effect Effects 0.000 description 96
- 238000000034 method Methods 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 16
- 230000009286 beneficial effect Effects 0.000 description 10
- 230000008054 signal transmission Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000006854 communication Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000013322 soy milk Nutrition 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/102445 WO2022267025A1 (fr) | 2021-06-25 | 2021-06-25 | Condensateur, circuit intégré, circuit à radiofréquence et dispositif électronique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117501430A true CN117501430A (zh) | 2024-02-02 |
Family
ID=84545085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180099523.4A Pending CN117501430A (zh) | 2021-06-25 | 2021-06-25 | 一种电容、集成电路、射频电路以及电子设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN117501430A (fr) |
| WO (1) | WO2022267025A1 (fr) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4883780B2 (ja) * | 2006-11-14 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | チャージポンプ回路 |
| CN105632889A (zh) * | 2014-11-04 | 2016-06-01 | 北大方正集团有限公司 | 电容的制作方法、电容和电容组件 |
| CN106411136A (zh) * | 2016-08-25 | 2017-02-15 | 浙江大学 | 一种隔离型功率变换器基于高压电容耦合的控制芯片 |
-
2021
- 2021-06-25 CN CN202180099523.4A patent/CN117501430A/zh active Pending
- 2021-06-25 WO PCT/CN2021/102445 patent/WO2022267025A1/fr active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022267025A1 (fr) | 2022-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |