CN117497627A - Three-junction quantum well solar cell, preparation method thereof and electronic equipment - Google Patents

Three-junction quantum well solar cell, preparation method thereof and electronic equipment Download PDF

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Publication number
CN117497627A
CN117497627A CN202311495727.7A CN202311495727A CN117497627A CN 117497627 A CN117497627 A CN 117497627A CN 202311495727 A CN202311495727 A CN 202311495727A CN 117497627 A CN117497627 A CN 117497627A
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quantum well
gaas
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吴真龙
朱鸿根
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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Abstract

The application discloses a three-junction quantum well solar cell, a preparation method thereof and electronic equipment, wherein the three-junction quantum well solar cell comprises: a substrate; the corrosion cut-off layer, the N-type ohmic contact layer, the first sub-cell, the first tunneling junction, the second sub-cell, the second tunneling junction, the metamorphic buffer layer, the third sub-cell and the P-type ohmic contact layer are sequentially grown on the substrate; the first sub-cell is an AlGaInP sub-cell, the second sub-cell is a GaAs sub-cell with a quantum well structure, and the third sub-cell is an In with a quantum well structure y GaAs sub-cell. In the present invention, by the following stepsThe quantum well structures are arranged in the second sub-cell and the third sub-cell, so that the band gaps of the second sub-cell and the third sub-cell can be effectively reduced, the band gaps of the formed three-junction quantum well solar cell are close to the theoretical band gaps, and therefore higher photoelectric conversion efficiency is obtained, and the purpose of obtaining the band gap matched three-junction quantum well solar cell with high cell efficiency is achieved.

Description

Three-junction quantum well solar cell, preparation method thereof and electronic equipment
Technical Field
The application relates to the technical field of solar cells, in particular to a three-junction quantum well solar cell, a preparation method thereof and electronic equipment.
Background
Solar cells are the most efficient clean energy situation, and can convert solar energy directly into electrical energy. The solar cell with highest conversion efficiency in the current material system is a III-V compound semiconductor solar cell, has the advantages of good high temperature resistance, strong irradiation resistance and the like, and is recognized as a new generation of high-performance long-life space main power supply.
The main research focus at present is a GaInP/GaAs/InGaAs gallium arsenide triple-junction solar cell with band gap matching, the theoretical efficiency can reach 50% under the condition of high-power light condensation, but due to lattice mismatch among materials of each layer, more defects can be introduced in the actual growth process of the materials, so that the obtained GaInP/GaAs/InGaAs gallium arsenide triple-junction solar cell with band gap matching has lower cell efficiency.
Disclosure of Invention
In view of the above, the present application provides a three-junction quantum well solar cell, a preparation method thereof, and an electronic device, so as to achieve the purpose of a band gap matched three-junction quantum well solar cell with higher cell efficiency.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions:
the first aspect of the embodiment of the invention discloses a three-junction quantum well solar cell, which comprises:
a substrate;
sequentially growing a corrosion cut-off layer, an N-type ohmic contact layer, a first sub-cell, a first tunneling junction, a second sub-cell, a second tunneling junction, a deterioration buffer layer, a third sub-cell and a P-type ohmic contact layer on the substrate by adopting a metal organic chemical vapor deposition MOCVD mode;
the first sub-cell is an AlGaInP sub-cell, the second sub-cell is a GaAs sub-cell with a quantum well structure, and the third sub-cell is an In with a quantum well structure y The GaAs sub-cell, y has a value ranging from 0.2 to 0.4, inclusive.
Optionally, an N-GaAs layer grown on the etch stop layer is used as an N-type ohmic contact layer.
Optionally, the first sub-cell comprises an N-AlInP window layer, an N-AlGaInP emitter region, a P-AlGaInP base region and a P-AlGaInP back field layer from bottom to top.
Optionally, the first tunneling junction includes a first N-type layer and a first P-type layer;
taking the N-GaAs layer or the N-GaInP layer grown on the first sub-cell as a first N-type layer of the first tunneling junction;
taking the P-AlGaAs layer grown on the first N-type layer as a first P-type layer of the first tunneling junction;
the first N-type layer comprises N-type doped Si or Te, and the first P-type layer comprises P-type doped C.
Optionally, the second tunneling junction includes a second N-type layer and a second P-type layer;
taking the N-GaAs layer or the N-GaInP layer grown on the second sub-cell as a second N-type layer of the second tunneling junction;
taking the P-AlGaAs material grown on the second N-type layer as a second P-type layer of the second tunneling junction;
the second N-type layer comprises N-type doped Si or Te, and the second P-type layer comprises P-type doped C.
Optionally, the deterioration buffer layer is made of AlGaInAs or GaInP materials;
the modification buffer layer at least comprises a three-layer sequence, the value of the lattice parameter of each layer increases gradually along the direction from the second subcell to the third subcell, and the lattice parameter of each layer is larger than that of the second subcell;
and at least one layer of the metamorphic buffer layer is an overshoot layer, and the lattice parameter of the overshoot layer is larger than that of the third subcell.
Optionally, the P-AlInGaAs or P-InGaAs layer grown on the third subcell is used as a P-type ohmic contact layer, and the P-type ohmic contact layer forms ohmic contact with the electrode.
Optionally, the second sub-cell sequentially comprises a second window layer, an N-GaAs or N-GaInP emitter region, a second quantum well layer, a P-GaAs base region and a second back field layer from bottom to top;
the second back surface field layer is made of GaInP or AlGaAs materials, and the second window layer is made of GaInP or AlGaInP or AlInP materials.
Optionally, the second quantum well layer is In x A GaAs/GaAsP quantum well structure;
the In is x The GaAs/GaAsP quantum well structure comprises In material x The second potential well layer of GaAs and the second barrier layer made of GaAsP;
wherein the In x The cycle number of the GaAs/GaAsP quantum well structure ranges from 1 to 100, including the end point value; x ranges from 0 to 0.2 inclusive; the thickness of the second potential well layer is 1-10 nm, including the endpoint value; the thickness of the second barrier layer ranges from 1 to 10nm, inclusive.
Optionally, the third sub-cell sequentially comprises a third window layer, an N-InGaAs or N-GaInP emitter region, a P-InGaAs base region and a third back field layer from bottom to top;
the third back surface field layer is made of GaInP or AlInGaAs material, and the third window layer is made of GaInP or AlInGaAs material;
or the third sub-cell comprises a third window layer and N-In from bottom to top y GaAs or N-GaInP emitter region, third quantum well layer, P-In y A GaAs base region and a third back surface field layer;
wherein the third back surface field layer adopts GaInP or AlIn y The third window layer is made of GaInP or AlIn y GaAs material.
Optionally, the third quantum well layer is In z GaAs/InGaAsP quantum well structure;
the In is z The GaAs/InGaAsP quantum well structure comprises In z A third potential well layer of GaAs material and a third barrier layer of InGaAsP material;
wherein the In z The cycle number of the GaAs/InGaAsP quantum well structure ranges from 1 to 100, including the endpoint values; z ranges in value from 0.3 to 0.5,including endpoint values; the thickness of the third potential well layer is 1-10 nm, including the end point value; the thickness of the third barrier layer ranges from 1 to 10nm, inclusive.
The second aspect of the embodiment of the invention discloses a preparation method of a three-junction quantum well solar cell, which comprises the following steps:
providing a substrate;
sequentially growing a corrosion stop layer, an N-type ohmic contact layer, a first subcell, a first tunneling junction, a second subcell, a second tunneling junction, a deterioration buffer layer, a third subcell and a P-type ohmic contact layer on the substrate by adopting a metal organic chemical vapor deposition MOCVD mode;
the first sub-cell is an AlGaInP sub-cell, the second sub-cell is a GaAs sub-cell with a quantum well structure, and the third sub-cell is an In with a quantum well structure y The GaAs sub-cell, y has a value ranging from 0.2 to 0.4, inclusive.
Optionally, sequentially growing a second window layer, an N-GaAs or N-GaInP emitter region, a second quantum well layer, a P-GaAs base region and a second back surface field layer on the first tunneling junction by adopting a metal organic chemical vapor deposition MOCVD mode;
a second sub-cell is formed by the second window layer, the N-GaAs or N-GaInP emitter region, the second quantum well layer, the P-GaAs base region and the second back surface field layer;
wherein the second quantum well layer is In x A GaAs/GaAsP quantum well structure;
the In is x The GaAs/GaAsP quantum well structure is made of In material x The second potential well layer of GaAs and the second barrier layer made of GaAsP are formed; the In is x The cycle number of the GaAs/GaAsP quantum well structure ranges from 1 to 100, including the end point value; x ranges from 0 to 0.2 inclusive; the thickness of the second potential well layer is 1-10 nm, including the endpoint value; the thickness of the second barrier layer ranges from 1 to 10nm, inclusive.
Optionally, a metal-organic layer is used on the deterioration buffer layerSequentially growing a third window layer and N-In a chemical vapor phase epitaxy deposition MOCVD mode y GaAs or N-GaInP emitter region, third quantum well layer, P-In y A GaAs base region and a third back surface field layer;
from the third window layer, N-In y GaAs or N-GaInP emitter region, third quantum well layer, P-In y The GaAs base region and the third back surface field layer form a third sub-cell;
wherein the third quantum well layer is In z GaAs/InGaAsP quantum well structure; the In is z GaAs/InGaAsP quantum well structure is composed of In z The third potential well layer of GaAs material and the third barrier layer of InGaAsP material form; the In is z The cycle number of the GaAs/InGaAsP quantum well structure ranges from 1 to 100, including the endpoint values; z ranges from 0.3 to 0.5 inclusive; the third potential well layer In z The thickness of GaAs ranges from 1 to 10nm, including the end point value; the thickness of the third barrier layer InGaAsP ranges from 1 nm to 10nm, and the end point value is included.
The third aspect of the embodiment of the invention discloses an electronic device, and the electronic device is provided with the three-junction quantum well solar cell disclosed in the first aspect of the embodiment of the invention; or the electronic equipment is provided with the three-junction quantum well solar cell prepared by the three-junction quantum well solar cell preparation method disclosed by the second aspect of the embodiment of the invention.
Based on the three-junction quantum well solar cell, the preparation method thereof and the electronic equipment provided by the embodiment of the invention, the three-junction quantum well solar cell comprises: a substrate; sequentially growing a corrosion stop layer, an N-type ohmic contact layer, a first sub-cell, a first tunneling junction, a second sub-cell, a second tunneling junction, a deterioration buffer layer, a third sub-cell and a P-type ohmic contact layer on the substrate by adopting a metal organic chemical vapor deposition MOCVD mode; wherein the first sub-cell is AlGaInP sub-cell, the second sub-cell is GaAs sub-cell with quantum well structure, and the third sub-cell is In with quantum well structure y The value range of y of the GaAs sub-battery is 0.2 to 0.4. In the embodiment of the invention, the quantum wells are arranged in the second sub-cell and the third sub-cellThe structure can effectively reduce the band gaps of the second sub-cell and the third sub-cell, so that the band gap of the formed three-junction quantum well solar cell is close to the theoretical band gap, and higher photoelectric conversion efficiency is obtained, namely the purpose of obtaining the three-junction quantum well solar cell with high cell efficiency and band gap matching is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is apparent that the drawings in the following description are only embodiments of the present application, and other drawings may be obtained according to the provided drawings without inventive effort to those skilled in the art.
The structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure, and should not be construed as limiting the scope of the invention, since any modification, variation in proportions, or adjustment of the size, which would otherwise be used by those skilled in the art, would not have the essential significance of the present disclosure, would not affect the efficacy or otherwise be achieved, and would still fall within the scope of the present disclosure.
Fig. 1 is a schematic structural diagram of a three-junction quantum well solar cell according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another three-junction quantum well solar cell according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a three-junction quantum well solar cell according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a three-junction quantum well solar cell according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a three-junction quantum well solar cell according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a three-junction quantum well solar cell according to an embodiment of the present invention;
wherein the substrate 1 is a corrosionEtch stop layer 2, N-type ohmic contact layer 3, first subcell 4, N-AlInP window layer 41, N-AlGaInP emitter 42, P-AlGaInP base region 43, P-AlGaInP back field layer 44, first tunnel junction 5, first N-type layer 51, first P-type layer 52, second subcell 6, second window layer 61, N-GaAs or N-GaInP emitter 62, P-GaAs base region 63, second back field layer 64, second quantum well layer 65, second tunnel junction 7, second N-type layer 71, second P-type layer 72, metamorphic buffer layer 8, third subcell 9, third window layer 91, N-In y GaAs or N-GaInP emitter region 92, P-In y GaAs base region 93, third back surface field layer 94, third quantum well layer 95, P-type ohmic contact layer 10.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which it is shown, and in which it is evident that the embodiments described are exemplary only some, and not all embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In order that the above-recited objects, features and advantages of the present application will become more readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings.
In the prior art, in the process of actually growing the band gap matched GaInP/GaAs/InGaAs gallium arsenide three-junction solar cell, due to lattice mismatch among materials of each layer, more defects are introduced, so that the obtained band gap matched GaInP/GaAs/InGaAs gallium arsenide three-junction solar cell has the problem of lower cell efficiency. Therefore, the embodiment of the invention discloses a three-junction quantum well solar cell with a new structure, and the band gap can be effectively reduced by introducing a quantum well structure into a second junction and a third junction, so that the band gap of the formed three-junction quantum well solar cell is close to the theoretical band gap, and further higher photoelectric conversion efficiency is obtained, namely the purpose of obtaining the three-junction quantum well solar cell with high cell efficiency and band gap matching is achieved.
Fig. 1 is a schematic structural diagram of a three-junction quantum well solar cell according to an embodiment of the present invention. The three-junction quantum well solar cell includes:
a substrate 1, a corrosion cut-off layer 2, an N-type ohmic contact layer 3, a first sub-cell 4, a first tunneling junction 5, a second sub-cell 6, a second tunneling junction 7, a deterioration buffer layer 8, a third sub-cell 9 and a P-type ohmic contact layer 10 which are sequentially grown on the substrate 1.
Wherein the first subcell 4 is an AlGaInP subcell, the second subcell 6 is a GaAs subcell having a quantum well structure, and the third subcell 9 is In having a quantum well structure y The GaAs sub-cell, y has a value ranging from 0.2 to 0.4, inclusive. Preferably, y can take a value of 0.3.
The first sub-cell 4 and the second sub-cell 6 are connected by a first tunneling junction 5, and the second sub-cell 6 and the third sub-cell 9 are connected by a second tunneling junction 7.
In an embodiment of the present invention, a metal organic chemical vapor deposition MOCVD mode is adopted to grow a corrosion stop layer 2, an N-type ohmic contact layer 3, a first subcell 4, a first tunneling junction 5, a second subcell 6, a second tunneling junction 7, a modified buffer layer 8, a third subcell 9 and a P-type ohmic contact layer 10 on a substrate 1 in sequence.
In one embodiment of the present invention, an N-GaAs layer grown on the corrosion-cut layer 2 is used as the N-type ohmic contact layer 3.
In one embodiment of the present invention, as shown in fig. 2, the first subcell 4 includes, in order from bottom to top, an N-AlInP window layer 41, an N-AlGaInP emitter region 42, a P-AlGaInP base region 43, and a P-AlGaInP back surface field layer 44.
In one embodiment of the present invention, as shown in fig. 3, the first tunneling junction 5 includes a first N-type layer 51 and a first P-type layer 52.
An N-GaAs layer or an N-GaInP layer grown on the first subcell 4 is used as the first N-type layer 51 of the first tunnel junction 5.
The P-AlGaAs layer grown on the first N-type layer 51 serves as a first P-type layer 52 of the first tunnel junction 5.
Wherein the N-type included in the first N-type layer 51 is doped to Si or Te; the P-type doping included in the first P-type layer 52 is C.
In one embodiment of the present invention, as shown in fig. 3, the second tunneling junction 7 includes a second N-type layer 71 and a second P-type layer 72;
an N-GaAs layer or an N-GaInP layer grown on the second subcell 6 is used as the second N-type layer 71 of the second tunnel junction 7.
The P-AlGaAs material grown on the second N-type layer 71 serves as a second P-type layer 72 of the second tunnel junction 7.
Wherein the N-type doping included in the second N-type layer 71 is Si or Te and the P-type doping included in the second P-type layer 72 is C.
In one embodiment of the present invention, the metamorphic buffer layer 8 is composed of AlGaInAs or GaInP materials.
The deterioration buffer layer 8 comprises at least a sequence of three layers, the value of the lattice parameter of each layer increases gradually along the direction of the second sub-cell 4 to the third sub-cell 9, and the lattice parameter of each layer is larger than that of the second sub-cell 4.
At least one of the deterioration buffer layers 8 is an overshoot layer, and the lattice parameter of the overshoot layer is larger than that of the third subcell 9.
Here, an example is illustrated:
the deterioration buffer layer 8 comprises at least a sequence of five layers: l1, L2, L3, L4, L5, the five-layer lattice parameters aL1, aL2, aL3, aL4, aL5, the lattice parameter a2 of the second subcell 6.
Wherein the five layers of lattice parameters aL1, aL2, aL3, aL4, aL5 of the metamorphic buffer layer 8 are each larger than the lattice parameter a2 of the second subcell 6 and increase in the direction of the second subcell 6 toward the third subcell 9. I.e., aL1< aL2< aL3< aL4< aL5.
At least one layer of the deterioration buffer layer 8 is an overshoot layer (overshooter layer) having a lattice parameter a1 greater than the lattice parameter a3 of the third subcell 9.
In one embodiment of the present invention, the P-AlInGaAs or P-InGaAs layer grown on the third subcell 9 is used as the P-type ohmic contact layer 10, and the P-type ohmic contact layer 10 forms an ohmic contact with the electrode.
In one embodiment of the present invention, the second subcell 6 includes, in order from bottom to top, a second window layer 61, an N-GaAs or N-GaInP emitter region 62, a P-GaAs base region 63, and a second back surface field layer 64.
The second back surface field layer 64 is made of GaInP or AlGaAs, and the second window layer 61 is made of GaInP or AlGaInP or AlInP.
In one embodiment of the present invention, as shown in fig. 4, the second subcell 6 includes, in order from bottom to top, a second window layer 61, an N-GaAs or N-GaInP emitter region 62, a second quantum well layer 65, a P-GaAs base region 63, and a second back field layer 64.
N-GaAs or N-GaInP emitter region 62 refers to an emitter region of N-GaAs or N-GaInP.
The second back surface field layer 64 is made of GaInP or AlGaAs material, and the second window layer 61 is made of GaInP or AlGaInP or AlInP material.
The second quantum well layer 65 has a multiple quantum well structure, preferably In x GaAs/GaAsP quantum well structure.
The number of cycles of the multiple quantum well structure ranges from 1 to 100, inclusive.
The In is x The GaAs/GaAsP quantum well structure comprises In material x The second potential well layer of GaAs and the second barrier layer of GaAsP are made of materials.
Wherein x has a value in the range of 0 to 0.2; the thickness of the second potential well layer ranges from 1 nm to 10nm, and the end point value is included; the thickness of the second barrier layer ranges from 1 to 10nm, inclusive.
In one embodiment of the present invention, the third subcell 9 includes, in order from bottom to top, a third window layer 91, an N-InGaAs or N-GaInP emitter region 92, a P-InGaAs base region 93, and a third back surface field layer 94.
The third back surface field layer 94 is made of GaInP or AlInGaAs material, and the third window layer 91 is made of GaInP or AlInGaAs material.
In one embodiment of the present invention, as shown In FIG. 5, the third subcell 9 includes, in order from bottom to top, a third window layer 91, N-In y GaAs or N-GaInP emitter region 92, third quantum well layer 95, P-In y A GaAs base region 93 and a third back surface field layer 94.
N-In y GaAs or N-GaInP emitter region 92 is referred to herein as the emitterThe material of the emitter region is N-In y GaAs or N-GaInP, wherein y has a value ranging from 0.2 to 0.4 inclusive.
The third back surface field layer 94 is GaInP or AlIn y The third window layer is made of GaInP or AlIn y GaAs materials, wherein y ranges from 0.2 to 0.4 inclusive.
The third quantum well layer 95 has a multiple quantum well structure, preferably In z GaAs/InGaAsP quantum well structure.
The number of cycles of the multiple quantum well structure ranges from 1 to 100, inclusive.
The In is z The GaAs/InGaAsP quantum well structure comprises In z A third potential well layer of GaAs material and a third barrier layer of InGaAsP material.
Wherein z ranges from 0.3 to 0.5 inclusive; the thickness of the third potential well layer ranges from 1 nm to 10nm, and the third potential well layer comprises end points; the thickness of the third barrier layer ranges from 1 to 10nm, inclusive.
In an embodiment of the present invention, the potential well layer in the quantum well structure in the third quantum well layer 95 may be a potential well layer made of InGaAsSb material or GaAsSb material.
In one embodiment of the present invention, the third subcell 9 employs In y GaAs material, the quantum well structure In the third quantum well layer 95 may be a potential well layer In a GaAs and barrier layer In b GaAs. The values of a and b are related to y, and specifically: b<y<a。
In connection with the structure of the three-junction quantum well solar cell shown in fig. 1 to 5, as shown in fig. 6, in the three-junction quantum well solar cell disclosed in the present invention, the second junction (second subcell 6) and the third junction (third subcell 9) adopt a quantum well structure design with stress balance.
Wherein the second sub-cell 6 is made of GaAs material, and the quantum well structure introduced by the second sub-cell comprises In x A second potential well layer made of GaAs material and a second barrier layer made of GaAsP material.
The third subcell 9 employs In y GaAs material, the quantum well structure introduced by the s material comprises the In z A third potential well layer made of GaAs material and a third barrier layer made of InGaAsP material.
In a specific implementation, the value relationship of x, y and z is as follows: x < y < z.
According to the three-junction quantum well solar cell disclosed by the embodiment of the invention, the band gaps of the second sub cell and the third sub cell can be effectively reduced by arranging the quantum well structures in the second sub cell and the third sub cell, so that the band gaps of the formed three-junction quantum well solar cell are close to the theoretical band gaps, and further higher photoelectric conversion efficiency is obtained, namely the purpose of obtaining the band gap matched three-junction quantum well solar cell with high cell efficiency is achieved.
Furthermore, by introducing a quantum well structure into the third sub-cell, the short-circuit current of the junction is increased to a certain extent to exceed the short-circuit current after the devices are connected in series, so that the radiation resistance of the flip-chip three-junction cell is improved.
The embodiment of the invention also discloses a preparation method of the three-junction quantum well solar cell. Based on the preparation method, any one of the three-junction quantum well solar cells disclosed in the figures 1 to 6 can be obtained. The preparation method comprises the following steps:
s1: a substrate 1 is provided.
S2: and a metal organic chemical vapor deposition MOCVD mode is adopted on the substrate 1 to sequentially grow a corrosion stop layer 2, an N-type ohmic contact layer 3, a first sub-cell 4, a first tunneling junction 5, a second sub-cell 6, a second tunneling junction 7, a deterioration buffer layer 8, a third sub-cell 9 and a P-type ohmic contact layer 10.
Wherein the first subcell 4 is an AlGaInP subcell, the second subcell 6 is a GaAs subcell with a quantum well structure, and the third subcell 9 is In with a quantum well structure y The GaAs sub-cell, y has a value ranging from 0.2 to 0.4, inclusive.
The metal organic chemical vapor deposition MOCVD mode is specifically adopted to sequentially realize the growth of each layer, and the specific implementation process of the S602 comprises the following steps:
growing a corrosion cut-off layer 2 on a substrate 1;
growing an N-type ohmic contact layer 3 on the corrosion cut-off layer 2;
growing a first subcell 4 on the N-type ohmic contact layer 3;
growing a first tunneling junction 5 on the first subcell 4;
growing a second subcell 6 over the first tunneling junction 5;
growing a second tunneling junction 7 on the second subcell 6;
growing a metamorphic buffer layer 8 on the second tunneling junction 7;
a third subcell 9 is grown on the modified buffer layer 8;
a P-type ohmic contact layer 10 is grown on the third subcell 9.
In an embodiment of the present invention, the specific process of growing the second subcell 6 on the first tunneling junction 5 includes:
a second window layer 61, an N-GaAs or N-GaInP emitter region 62, a second quantum well layer 65, a P-GaAs base region 63, and a second back surface field layer 64 are grown sequentially on the first tunnel junction 5 using a metal organic chemical vapor deposition MOCVD process.
The second subcell 6 is constituted by a second window layer 61, an N-GaAs or N-GaInP emitter region 62, a second quantum well layer 65, a P-GaAs base region 63, and a second back field layer 64.
Wherein the second quantum well layer 65 is In x A GaAs/GaAsP quantum well structure;
In x the GaAs/GaAsP quantum well structure is made of In material x The second potential well layer of GaAs and the second barrier layer made of GaAsP are formed; the In is x The cycle number of the GaAs/GaAsP quantum well structure ranges from 1 to 100, including the end point value; x ranges from 0 to 0.2 inclusive; the thickness of the second potential well layer ranges from 1 nm to 10nm, and the end point value is included; the thickness of the second barrier layer ranges from 1 to 10nm, inclusive.
In one embodiment of the present invention, the process of growing the third subcell 9 on the modified buffer layer 8 includes:
the third window layer 91 and N-In are sequentially grown on the metamorphic buffer layer 8 by adopting a metal organic chemical vapor deposition MOCVD mode y GaAs or GaAsN-GaInP emitter region 92, third quantum well layer 95, P-In y A GaAs base region 93 and a third back surface field layer 94.
From the third window layer 91, N-In y GaAs or N-GaInP emitter region 92, third quantum well layer 95, P-In y The GaAs base region 93 and the third back surface field layer 94 constitute the third subcell 9.
Wherein the third quantum well layer 95 is In z GaAs/InGaAsP quantum well structure; in (In) z GaAs/InGaAsP quantum well structure is composed of In z The third potential well layer of GaAs material and the third barrier layer of InGaAsP material form; the In is z The cycle number of the GaAs/InGaAsP quantum well structure ranges from 1 to 100, including the endpoint values; z ranges from 0.3 to 0.5 inclusive; the third well layer In z The thickness of GaAs ranges from 1 to 10nm, including the end point value; the thickness of the third barrier layer InGaAsP ranges from 1 nm to 10nm, and the end point value is included.
According to the preparation method of the three-junction quantum well solar cell disclosed by the embodiment of the invention, the band gaps of the second sub cell and the third sub cell can be effectively reduced by arranging the quantum well structures in the second sub cell and the third sub cell, so that the band gap of the formed three-junction quantum well solar cell is close to the theoretical band gap, and further higher photoelectric conversion efficiency is obtained, namely the purpose of obtaining the three-junction quantum well solar cell with high cell efficiency and band gap matching is achieved.
Furthermore, by introducing a quantum well structure into the third sub-cell, the short-circuit current of the junction is increased to a certain extent to exceed the short-circuit current after the devices are connected in series, so that the radiation resistance of the flip-chip three-junction cell is improved.
Based on the preparation method of the three-junction quantum well solar cell and the three-junction quantum well solar cell disclosed by the embodiment of the invention, the invention also discloses electronic equipment, wherein the electronic equipment is provided with the three-junction quantum well solar cell disclosed by the embodiment of the invention; or the electronic equipment is provided with the three-junction quantum well solar cell prepared by the three-junction quantum well solar cell preparation method.
In the present specification, each embodiment is described in a progressive manner, or a parallel manner, or a combination of progressive and parallel manners, and each embodiment is mainly described as a difference from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
It should be noted that in the description of the present application, it is to be understood that the description of the drawings and embodiments are illustrative and not restrictive. Like diagramming marks throughout the embodiments of the specification identify like structures. In addition, the drawings may exaggerate the thicknesses of some layers, films, panels, regions, etc. for understanding and ease of description. It will also be understood that when an element such as a layer, film, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present. In addition, "on …" refers to positioning an element on or under another element, but not essentially on the upper side of the other element according to the direction of gravity.
The terms "upper," "lower," "top," "bottom," "inner," "outer," and the like are used for convenience in describing and simplifying the present application based on the orientation or positional relationship shown in the drawings, and do not denote or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present application. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or apparatus that comprises such element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (15)

1. A three-junction quantum well solar cell, the three-junction quantum well solar cell comprising:
a substrate;
sequentially growing a corrosion cut-off layer, an N-type ohmic contact layer, a first sub-cell, a first tunneling junction, a second sub-cell, a second tunneling junction, a deterioration buffer layer, a third sub-cell and a P-type ohmic contact layer on the substrate by adopting a metal organic chemical vapor deposition MOCVD mode;
the first sub-cell is an AlGaInP sub-cell, the second sub-cell is a GaAs sub-cell with a quantum well structure, and the third sub-cell is an In with a quantum well structure y The GaAs sub-cell, y has a value ranging from 0.2 to 0.4, inclusive.
2. The three-junction quantum well solar cell of claim 1, wherein an N-GaAs layer grown on the etch stop layer is used as an N-type ohmic contact layer.
3. The three-junction quantum well solar cell of claim 1, wherein the first subcell comprises, in order from bottom to top, an N-AlInP window layer, an N-AlGaInP emitter region, a P-AlGaInP base region, and a P-AlGaInP back surface layer.
4. The three junction quantum well solar cell of claim 1, wherein the first tunneling junction comprises a first N-type layer and a first P-type layer;
taking the N-GaAs layer or the N-GaInP layer grown on the first sub-cell as a first N-type layer of the first tunneling junction;
taking the P-AlGaAs layer grown on the first N-type layer as a first P-type layer of the first tunneling junction;
the first N-type layer comprises N-type doped Si or Te, and the first P-type layer comprises P-type doped C.
5. The three junction quantum well solar cell of claim 1, wherein the second tunneling junction comprises a second N-type layer and a second P-type layer;
taking the N-GaAs layer or the N-GaInP layer grown on the second sub-cell as a second N-type layer of the second tunneling junction;
taking the P-AlGaAs material grown on the second N-type layer as a second P-type layer of the second tunneling junction;
the second N-type layer comprises N-type doped Si or Te, and the second P-type layer comprises P-type doped C.
6. The three junction quantum well solar cell of claim 1, wherein the metamorphic buffer layer is comprised of AlGaInAs or GaInP materials;
the modification buffer layer at least comprises a three-layer sequence, the value of the lattice parameter of each layer increases gradually along the direction from the second subcell to the third subcell, and the lattice parameter of each layer is larger than that of the second subcell;
and at least one layer of the metamorphic buffer layer is an overshoot layer, and the lattice parameter of the overshoot layer is larger than that of the third subcell.
7. The three junction quantum well solar cell of claim 1, wherein a P-AlInGaAs or P-InGaAs layer grown on the third subcell is used as a P-type ohmic contact layer, the P-type ohmic contact layer forming an ohmic contact with an electrode.
8. The three-junction quantum well solar cell of any one of claims 1 to 7, wherein the second subcell comprises, in order from bottom to top, a second window layer, an N-GaAs or N-GaInP emitter region, a second quantum well layer, a P-GaAs base region, and a second back surface field layer;
the second back surface field layer is made of GaInP or AlGaAs materials, and the second window layer is made of GaInP or AlGaInP or AlInP materials.
9. The three-junction quantum well solar cell of claim 8, wherein the second quantum well layer is In x A GaAs/GaAsP quantum well structure;
the In is x The GaAs/GaAsP quantum well structure comprises In material x The second potential well layer of GaAs and the second barrier layer made of GaAsP;
wherein the In x The cycle number of the GaAs/GaAsP quantum well structure ranges from 1 to 100, including the end point value; x ranges from 0 to 0.2 inclusive; the thickness of the second potential well layer is 1-10 nm, including the endpoint value; the thickness of the second barrier layer ranges from 1 to 10nm, inclusive.
10. The three junction quantum well solar cell of any one of claims 1 to 7, wherein the third subcell comprises, in order from bottom to top, a third window layer, an N-InGaAs or N-GaInP emitter region, a P-InGaAs base region, and a third back surface field layer;
the third back surface field layer is made of GaInP or AlInGaAs material, and the third window layer is made of GaInP or AlInGaAs material;
or the third sub-cell comprises a third window layer and N-In from bottom to top y GaAs or N-GaInP emitter region, third quantum well layer, P-In y A GaAs base region and a third back surface field layer;
wherein the third back surface field layer adopts GaInP or AlIn y The third window layer is made of GaInP or AlIn y GaAs material.
11. The three-junction quantum well solar cell of claim 10, wherein the third quantum well layer is In z GaAs/InGaAsP quantum well structure;
the In is z The GaAs/InGaAsP quantum well structure comprises In z A third potential well layer of GaAs material and a third barrier layer of InGaAsP material;
wherein the In z The cycle number of the GaAs/InGaAsP quantum well structure ranges from 1 to 100, including the endpoint values; z ranges from 0.3 to 0.5 inclusive; the thickness of the third potential well layer is 1-10 nm, including the end point value; the thickness of the third barrier layer ranges from 1 to 10nm, inclusive.
12. The preparation method of the three-junction quantum well solar cell is characterized by comprising the following steps of:
providing a substrate;
sequentially growing a corrosion stop layer, an N-type ohmic contact layer, a first subcell, a first tunneling junction, a second subcell, a second tunneling junction, a deterioration buffer layer, a third subcell and a P-type ohmic contact layer on the substrate by adopting a metal organic chemical vapor deposition MOCVD mode;
the first sub-cell is an AlGaInP sub-cell, the second sub-cell is a GaAs sub-cell with a quantum well structure, and the third sub-cell is an In with a quantum well structure y The GaAs sub-cell, y has a value ranging from 0.2 to 0.4, inclusive.
13. The method of claim 12, wherein a metal organic chemical vapor deposition MOCVD mode is used to sequentially grow a second window layer, an N-GaAs or N-GaInP emitter, a second quantum well layer, a P-GaAs base region, and a second back surface field layer on the first tunnel junction;
a second sub-cell is formed by the second window layer, the N-GaAs or N-GaInP emitter region, the second quantum well layer, the P-GaAs base region and the second back surface field layer;
wherein the second quantum well layer is In x A GaAs/GaAsP quantum well structure;
the In is x The GaAs/GaAsP quantum well structure is made of In material x The second potential well layer of GaAs and the second barrier layer made of GaAsP are formed; the In is x The cycle number of the GaAs/GaAsP quantum well structure ranges from 1 to 100, including the end point value; x ranges from 0 to 0.2 inclusive; the thickness of the second potential well layer is 1-10 nm, including the endpoint value; the thickness of the second barrier layer ranges from 1 to 10nm, inclusive.
14. The method according to claim 12, wherein a metal organic chemical vapor deposition MOCVD method is used to sequentially grow a third window layer and N-In on the modified buffer layer y GaAs or N-GaInP emitter region, third quantum well layer, P-In y A GaAs base region and a third back surface field layer;
from the third window layer, N-In y GaAs or N-GaInP emitter region, third quantum well layer, P-In y The GaAs base region and the third back surface field layer form a third sub-cell;
wherein the third quantum well layer is In z GaAs/InGaAsP quantum well structure; the In is z GaAs/InGaAsP quantum well structure is composed of In z The third potential well layer of GaAs material and the third barrier layer of InGaAsP material form; the In is z The cycle number of the GaAs/InGaAsP quantum well structure ranges from 1 to 100, including the endpoint values; z ranges from 0.3 to 0.5 inclusive; the third potential well layer In z The thickness of GaAs ranges from 1 to 10nm, including the end point value; the thickness of the third barrier layer InGaAsP ranges from 1 nm to 10nm, and the end point value is included.
15. An electronic device, characterized in that the three-junction quantum well solar cell according to any one of claims 1 to 11 is provided on the electronic device; alternatively, the electronic device is provided with a three-junction quantum well solar cell manufactured by the three-junction quantum well solar cell manufacturing method according to any one of claims 12 to 14.
CN202311495727.7A 2023-11-10 2023-11-10 Three-junction quantum well solar cell, preparation method thereof and electronic equipment Pending CN117497627A (en)

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