CN117476850A - 一种发光元件、背板及显示面板 - Google Patents

一种发光元件、背板及显示面板 Download PDF

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Publication number
CN117476850A
CN117476850A CN202210868107.2A CN202210868107A CN117476850A CN 117476850 A CN117476850 A CN 117476850A CN 202210868107 A CN202210868107 A CN 202210868107A CN 117476850 A CN117476850 A CN 117476850A
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China
Prior art keywords
layer
melting point
solder
emitting element
light
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Pending
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CN202210868107.2A
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English (en)
Inventor
马刚
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Xiamen Xinying Display Technology Co ltd
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Xiamen Xinying Display Technology Co ltd
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Publication date
Application filed by Xiamen Xinying Display Technology Co ltd filed Critical Xiamen Xinying Display Technology Co ltd
Priority to CN202210868107.2A priority Critical patent/CN117476850A/zh
Priority to PCT/CN2023/104386 priority patent/WO2024017011A1/zh
Priority to US18/489,880 priority patent/US20240047635A1/en
Publication of CN117476850A publication Critical patent/CN117476850A/zh
Pending legal-status Critical Current

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Abstract

本发明公开了一种发光元件、背板及显示面板，其中用于显示面板的发光元件包括发光元件及焊料渐变层，发光元件包括发光外延层以及形成在发光外延层上的焊盘层，焊料渐变层设置于发光元件的焊盘层上，在远离焊盘层的方向上，焊料渐变层熔点逐渐降低。在将发光元件焊接至背板的过程中，由于焊料渐变层中存在多个熔点不同的熔点区或金属层，在一次焊接及修复性焊接过程中，控制一次焊接温度大于修复焊接时的温度，能够避免修复性焊接对一次焊接时形成的焊点产生影响，有效控制焊接时焊接良率。

Description

一种发光元件、背板及显示面板
技术领域
本发明涉及半导体器件封装技术领域，具体涉及一种发光元件、背板及显示面板。
背景技术
在对半导体器件进行封装时，芯片需要设置在背板上并与其导电性连接。在将芯片与背板进行导电性连接时，一般需要在芯片或者背板上沉积焊料，待将特定的焊料熔化后，形成冶金结合点以将芯片与背板焊接。
现有技术中，通常是在芯片或者背板上沉积一个固定熔点的焊料，由于焊料熔点固定，适宜的焊接温度的范围一般较窄。但是，芯片等元器件可能会应用在不同客户的不同产品中，对于不同的应用场合，由于客户产品中其他部件的耐温或者其他特性差异，对芯片等元器件所期望的焊接温度存在差异，进而，提高芯片等元器件的易用性对于提高用户使用体验至关重要，如何提高芯片等元器件的适用性也成为本领域技术人员亟需解决的技术问题。
此外，在Micro LED显示器件中，将芯片焊接至背板时的焊接温度一般是固定的。然而，芯片一般需要两次焊接，一次焊接后需要对芯片进行检测，然后进行二次修复性焊接。但是，由于焊接时的焊接温度是固定的，进而二次修复性焊接的时候会对已经焊接好的焊点产生影响，比如，需要让已经形成的焊点重新熔化，从而影响焊接的可靠性。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种发光元件、背板及显示面板，以提高芯片等元器件的适用范围，提高焊接的可靠性。
为了实现上述目的及其他相关目的，本发明提供一种用于显示面板的发光元件，包括：
发光元件，发光元件包括发光外延层，以及形成在发光外延层上的焊盘层；
焊料渐变层，设置于发光元件的焊盘层上，在远离焊盘层的方向上，焊料渐变层熔点逐渐降低。
可选地，焊料渐变层为单层结构，单层结构包括至少两种金属材料，且在远离焊盘层的方向上，单层结构中的各金属材料的含量不同。
可选地，焊料渐变层包括铟和锡，在远离焊盘层的方向上，焊料渐变层内的铟金属的含量逐渐升高。
可选地，在远离焊盘层的方向上，焊料渐变层依次包括第一熔点区、第二熔点区及第三熔点区，第一熔点区的熔点范围介于180℃～230℃，第二熔点区的熔点范围介于120℃～180℃，第三熔点区的熔点范围介于100℃～120℃。
可选地，第一熔点区的铟含量介于0～25％，第二熔点区的铟含量介于25％～60％，第三熔点区的铟含量介于60％～70％。
本发明还提供一种用于焊接发光元件的背板，包括：
背板，背板具有用于焊接发光元件的焊盘；
焊料渐变层，设置于背板的焊盘上，在远离焊盘的方向上，焊料渐变层的熔点逐渐降低。
可选地，焊料渐变层为单层结构，单层结构包括至少两种金属材料，且在远离焊盘的方向上，单层结构中的各金属材料的含量不同。
可选地，焊料渐变层包括铟和锡，在远离焊盘的方向上，焊料渐变层内的铟金属的含量逐渐升高。
可选地，在远离焊盘的方向上，焊料渐变层依次包括第一熔点区、第二熔点区及第三熔点区，第一熔点区的熔点范围介于180℃～230℃，第二熔点区的熔点范围介于120℃～180℃，第三熔点区的熔点范围介于100℃～120℃。
可选地，第一熔点区的铟含量介于0～25％，第二熔点区的铟含量介于25％～60％，第三熔点区的铟含量介于60％～70％。
本发明还提供一种显示面板，包括：
背板；
固定在背板上的发光元件，发光元件为上述任一项的发光元件，且发光元件通过焊盘层上的焊料渐变层焊接于背板上。
与现有技术相比，本发明所述的发光元件、背板及显示面板至少具备如下有益效果：
本发明所述的发光元件的焊盘层上设置有焊料渐变层，其中，焊料渐变层沿远离焊盘层的方向上熔点逐渐降低。在将发光元件焊接至背板的过程中，由于焊料渐变层中存在多个熔点不同的熔点区或金属层，在一次焊接及修复性焊接过程中，控制一次焊接温度大于修复焊接时的温度，能够避免修复性焊接对一次焊接时形成的焊点产生影响，有效控制焊接时焊接良率。
本发明所述的背板的焊盘上设置有焊料渐变层，其中，焊料渐变层在远离焊盘的方向上熔点逐渐降低。在将发光元件焊接至背板的过程中，由于背板中的焊料渐变层包括多个熔点不同的熔点区或金属层，在一次焊接时，采用较低的焊接温度熔化远离背板且熔点相对较低的焊料，靠近背板熔点较高的焊料大部分未发生熔化。对发光元件进行检测，如果发现不良的发光元件，一次焊接后的芯片更容易去除。
此外，本发明中的发光元件及背板还可以应用于有不同焊接温度的产品中，具有更广泛的适用性。本发明所述的焊接方法及显示面板包括上述发光元件或背板，同样能够达到上述技术效果。
附图说明
图1为本发明实施例1中的一实施例中所述的发光元件的结构示意图；
图2为本发明实施例1中的另一实施例中所述的发光元件的结构示意图；
图3为本发明实施例2中的一实施例中所述的发光元件的结构示意图；
图4为本发明实施例2中的另一实施例中所述的发光元件的结构示意图；
图5为本发明将实施例1中将发光元件对应转移至背板上方的结构示意图；
图6为本发明实施例1中将发光元件焊接至背板上的结构示意图；
图7为本发明实施例2中将发光元件对应转移至背板上方的结构示意图；
图8为本发明实施例2中将发光元件焊接至背板上的结构示意图；
图9为本发明实施例3中所述的显示面板的结构示意图；
图10为本发明实施例4所述的显示面板的结构示意图。
附图标记列表：
100 焊料渐变层
101 第一熔点区
102 第二熔点区
103 第三熔点区
110 第一金属层
120 第二金属层
130 第三金属层
200 LED芯片衬底
201 第一粘结层
202 焊盘层
300 背板
301 第二粘结层
302 一次焊接焊盘
具体实施方式
以下由特定的具体实施例说明本发明的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本申请的精神下进行各种修饰或改变。需说明的是，在不冲突的情况下，以下实施例及实施例中的特征可以相互组合。
须知，本发明实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量及比例可随意的改变，且其组件布局形态也可能更为复杂。说明书附图所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本申请可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本申请所揭示的技术内容得能涵盖的范围内。
基于背景技术及现有技术中存在的问题，本发明提供一种发光元件、背板、显示面板及发光元件焊接方法，在发光元件或者背板上设置焊料渐变层，该焊料渐变层包括多个渐变的熔点，以针对不同的焊接过程设置不同的焊接温度，提高LED芯片的可修复性。
实施例1
本实施例提供一种用于显示面板的发光元件，该发光元件包括发光元件及设置于发光元件上的焊料渐变层，发光元件包括发光外延层，以及形成在发光外延层上的焊盘层。焊料渐变层设置于发光元件的焊盘层上，并且在远离焊盘层的方向上，焊料渐变层熔点逐渐降低。
其中，发光元件可以为LED芯片。可选地，参照图1，LED芯片包括LED芯片衬底200以及形成于LED芯片衬底200表面上的发光外延层(图中未示出)。可选地，该发光外延层包括依次形成于LED芯片衬底200表面上的第一半导体层、有源层及与第一半导体层导电类型相反的第二半导体层，有源层为发光元件的发光层。第一半导体层可以是N型半导体层，第二半导体层为P型半导体层。当然，第一半导体层为P型半导体层，第二半导体层为N型半导体层也是可以的。可选地，上述第一半导体层可以是N型GaN层，有源层为量子阱层，第二半导体层为P型GaN层。
在本实施例中，参照图1、图5，LED芯片衬底200的另一表面上形成有电极结构(图中未示出)，在电极结构的表面形成有焊盘层202，该焊盘层202用于将LED芯片焊接至背板300上。可选地，LED衬底表面的电极结构与焊盘层202之间还形成有第一粘结层201，用于将焊盘层202及电极结构固定。
参照图1或2，焊料渐变层100形成于发光元件的焊盘层202上，焊料渐变层100自沿远离焊盘层202的方向上熔点逐渐降低。
在一实施例中，参照图1，焊料渐变层100包括至少两种金属材料形成的单层结构，并且，自沿远离焊盘层202的方向上，单层结构中的各金属材料的含量不同。具体地，在本实施例中，焊料渐变层100包括锡、铟。焊料渐变层100沿远离焊盘层202的方向上依次包括第一熔点区110、第二熔点区120及第三熔点区130，第一熔点区110的熔点范围介于180℃～230℃，第二熔点区120的熔点范围介于120℃～180℃，第三熔点区130的熔点为100℃～120℃。其中，第一熔点区110的铟含量介于0～25％，第二熔点区120的铟含量介于25％～60％，第三熔点区130的铟含量为60％～70％。该焊料渐变层100可以采用多源蒸镀的方式在发光元件的焊盘层上逐渐蒸镀形成。例如，在蒸镀过程中，控制锡铟比依次为Sn:In＝8:1，Sn:In＝7:1，Sn:In＝6:1，Sn:In＝5:1，Sn:In＝4:1，Sn:In＝3:1，Sn:In＝2:1，Sn:In＝1:1，且在同一铟锡比例下蒸镀相同厚度后，调整一次铟锡的比例，直至形成该焊料渐变层100。
在另一实施例中，参照图2，焊料渐变层100为多层结构，多层结构包括依次叠置的多个金属层，每个金属层的熔点不同。其中，每层金属层可以由至少两种金属混合形成，也可以由单一金属形成，每层金属层中包含的金属可以相同也可以不同。需要说明的是，在本实施例中，只要每层金属层的熔点不同，且自远离焊盘层202的方向上，金属层的熔点逐渐递减即可实现，对每层金属层的材料组成不做限制。具体地，参照图2，焊料渐变层100远离焊盘层202的方向上依次包括第一金属层101、第二金属层102及第三金属层103，每层金属层通过多源蒸镀形成。其中，第一金属层101的熔点范围介于180℃～230℃，第二金属层102的熔点范围介于120℃～180℃，第三金属层103的熔点为100℃～120℃。其中，第一金属层101可以为锡金属构成，第二金属层102可以由铟金属构成，第三金属层103由铟、锡金属构成。
采用上述发光元件进行焊接，焊接方法如下：
S101：提供一发光元件；
参照图1、2或5，提供一发光元件，该发光元件为LED芯片，且该LED芯片的结构与上述LED芯片的结构相同，在此不再一一赘述。并且，在本实施例中，以图1所示的发光元件为例进行说明。
S102：提供一背板；
参照图5，提供一背板300，该背板300的表面设置有用于焊接发光元件的焊盘，焊盘包括用于焊接发光元件的一次焊接焊盘302，以及用于焊接修复用的发光元件的修复焊盘(图中未示出)，修复焊盘与一次焊接焊盘302一一对应设置。
可选地，一次焊接焊盘302与背板300之间还设置有第二粘结层301，以将一次焊接焊盘302与背板300上的电极层固定。
S103：将发光元件转移至一次焊接焊盘，并在第一焊接温度下加热焊料渐变层，以将发光元件焊接至一次焊接焊盘；
参照图5，将芯片转移至一次焊接焊盘302，采用第一焊接温度熔化发光元件上的焊料渐变层100，以将芯片焊接至背板300的一次焊接焊盘302上，完成一次焊接。在本实施例中，控制第一焊接温度范围介于120℃～230℃。例如，第一焊接温度可以为150℃、180℃及200℃。
S104：将发光元件转移至无法正常点亮的发光元件所对应的修复焊盘上，在第二焊接温度下加热焊料渐变层，以将发光元件焊接至修复焊盘；
参照图5或6，当对一次焊接的芯片进行检测时，如发现芯片无法正常点亮，可以采用第二焊接温度加热芯片上的焊料渐变层100，以将芯片焊接至修复焊盘上。在此过程中，需要控制第一焊接温度与第二焊接温度介于焊料渐变层100的熔点范围内。并且焊接时，控制第二焊接温度小于第一焊接温度，以防止对第二焊接温度对一次焊接时产生的焊点产生影响，以影响焊点的可靠性。在本实施例中，第二焊接温度的范围介于120℃～180℃。例如，第二焊接温度可以为120℃、150℃及180℃。
本实施例中的发光元件的焊盘层上形成有焊料渐变层，在将发光元件焊接至背板的过程中，由于焊料渐变层中存在多个熔点不同的熔点区或金属层，在一次焊接及修复性焊接过程中，控制一次焊接温度大于修复焊接时的温度，能够避免修复性焊接对一次焊接时形成的焊点产生影响，有效控制焊接时焊接良率。
实施例2
本实施例提供一种用于焊接发光元件的背板，该背板包括背板以及设置于背板的焊盘上的焊料渐变层，焊料渐变层设置于背板的焊盘上，在远离焊盘的方向上，熔点渐变层的熔点逐渐降低。
其中，参照图3或4，背板300用于承载发光元件，以形成显示面板。具体地，背板300包括基板(图中未示出)以及置于基板上的驱动电路层(图中未示出)。可选地，该驱动电路层包括依次设置在基板上的薄膜晶体管及与薄膜晶体管电连接的电极，薄膜晶体管包括有源层、栅极绝缘层、栅极、源漏极等部件，可选地，薄膜晶体管可以为低温多晶硅(LowTemperature Poly-silicon，LTPS)薄膜晶体管或铟镓锌氧化物(Indium Gallium ZincOxide，IGZO)薄膜晶体管。
背板300的电极层的表面上设置有一次焊接焊盘302，焊料渐变层100形成于一次焊接焊盘302的表面。
在一实施例中，参照图3，焊料渐变层100包括至少两种金属材料形成的单层结构，并且，自沿远离一次焊接焊盘302的方向上，单层结构中的各金属材料的含量不同。具体地，在本实施例中，焊料渐变层100包括锡、铟。焊料渐变层100沿远离一次焊接焊盘302的方向上依次包括第一熔点区110、第二熔点区120及第三熔点区130，第一熔点区110的熔点范围介于180℃～230℃，第二熔点区120的熔点范围介于120℃～180℃，第三熔点区130的熔点为100℃～120℃。其中，第一熔点区110的铟含量介于0～25％，第二熔点区120的铟含量介于25％～60％，第三熔点区130的铟含量为60％～70％。该焊料渐变层100可以采用多源蒸镀的方式在发光元件的焊盘层上逐渐蒸镀形成。例如，在蒸镀过程中，控制锡铟比依次为Sn:In＝8:1，Sn:In＝7:1，Sn:In＝6:1，Sn:In＝5:1，Sn:In＝4:1，Sn:In＝3:1，Sn:In＝2:1，Sn:In＝1:1，且在同一铟锡比例下蒸镀相同厚度后，调整一次铟锡的比例，直至形成该焊料渐变层100。
在另一实施例中，参照图4，焊料渐变层100为多层结构，多层结构包括依次叠置的多个金属层，每个金属层的熔点不同。其中，每层金属层可以由至少两种金属混合形成，也可以由单一金属形成，每层金属层中包含的金属可以相同也可以不同。需要说明的是，在本实施例中，只要每层金属层的熔点不同，且自远离一次焊接焊盘302的方向上，金属层的熔点逐渐递减即可实现，对每层金属层的材料组成不做限制。具体地，参照图2，焊料渐变层100远离一次焊接焊盘302的方向上依次包括第一金属层101、第二金属层102及第三金属层103，每层金属层通过多源蒸镀形成。其中，第一金属层101的熔点范围介于180℃～230℃，第二金属层102的熔点范围介于120℃～180℃，第三金属层103的熔点为100℃～120℃。其中，第一金属层101可以为锡金属构成，第二金属层102可以由铟金属构成，第三金属层103由铟、锡金属构成。
将发光元件焊接于上述背板上，其焊接方法具体包括以下步骤：
S101：提供一背板；
参照图3、4或7，提供一背板300，该背板300的结构与上述背板300结构相同，在此不再一一赘述，在本实施例中，以图4所示的背板为例进行说明。
S102：提供一发光元件；
提供一发光元件，该发光元件可以为LED芯片，该LED芯片包括衬底以及形成于衬底表面上的发光结构(图中未示出)。可选地，该发光结构包括依次形成于衬底表面上的第一半导体层、有源层及与第一半导体层导电类型相反的第二半导体层，有源层为发光元件的发光层。第一半导体层可以是N型半导体层，第二半导体层为P型半导体层。当然，第一半导体层为P型半导体层，第二半导体层为N型半导体层也是可以的。可选地，上述第一半导体层可以是N型GaN层，有源层为量子阱层，第二半导体层为P型GaN层。
在本实施例中，LED衬底的另一表面上形成有电极结构(图中未示出)，在电极结构的表面形成有焊盘层，该焊盘层用于将LED芯片焊接至背板300上。
S103：采用第一焊接温度熔化焊料渐变层以将发光元件焊接至背板上；
参照图7或8，采用第一焊接温度熔化背板300上的焊料渐变层100以将芯片焊接至背板300上，以完成一次焊接。需要说明的是，在一次焊接时，需要控制第一焊接温度尽可能的小，以熔化焊料渐变层100远离背板300的一端，熔点较小的焊料，其他区域的焊料不发生熔化。可选地，第一焊接温度介于120℃～180℃，第二焊接温度可以为120℃、150℃及180℃。
S104：对焊接至背板上的发光元件进行点亮测试，若发光元件为不能正常点亮，直接将发光元件去除；
参照图8，当一次焊接之后，对焊接至背板300上的芯片进行点亮检测，若发光元件为不能正常点亮，直接将芯片去除。
本实施例在将发光元件焊接至背板的过程中，由于背板中的焊料渐变层包括多个熔点不同的熔点区或金属层，在一次焊接时，采用较低的焊接温度熔化远离背板且熔点相对较低的焊料，靠近背板熔点高的焊料大部分未发生熔化。对发光元件进行检测，如果发现不良的发光元件，可以很容易得将一次焊接后的芯片进行去除，提高了LED芯片的修复效率。
实施例3
本实施例提供一种显示面板，参照图9，该显示面板包括背板300以及固定在背板300上的发光元件，其中，发光元件为实施例1所述的发光元件，在本实施例中，发光元件为LED芯片，该发光元件通过焊盘层上的焊料渐变层100焊接于背板300上。
本实施例中的显示面板中实施例1中的发光元件，在将发光元件焊接至背板的过程中，由于发光元件中的焊料渐变层包括多个熔点不同的熔点区或金属层，在一次焊接及修复性焊接过程中，控制一次焊接温度大于修复焊接时的温度，能够避免修复性焊接对一次焊接时形成的焊点产生影响，有效控制焊接时焊接的质量及良率，进而提高显示面板良率及使用寿命。
实施例4
本实施例还提供一种显示面板，参照图10，该显示面板包括背板300以及固定在背板300上的发光元件，其中，背板300为实施例2所述的背板300，该发光元件通过位于背板300焊盘层上的焊料渐变层100焊接于背板300上。在本实施例中，发光元件为LED芯片。
本实施例中的显示面板中实施例2中的背板，在将发光元件焊接至背板的过程中，由于背板中的焊料渐变层包括多个熔点不同的熔点区或金属层，在一次焊接时，采用较低的焊接温度熔化远离背板且熔点相对较低的焊料，靠近背板熔点高的焊料大部分未发生熔化。对发光元件进行检测，如果发现不良的发光元件，可以很容易将一次焊接后的芯片进行去除，进而提高了LED芯片的修复效率。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (11)

1.一种用于显示面板的发光元件，其特征在于，包括：
发光元件，所述发光元件包括发光外延层，以及形成在所述发光外延层上的焊盘层；
焊料渐变层，设置于所述发光元件的所述焊盘层上，在远离所述焊盘层的方向上，所述焊料渐变层熔点逐渐降低。
2.根据权利要求1所述的发光元件，其特征在于，所述焊料渐变层为单层结构，所述单层结构包括至少两种金属材料，且在远离所述焊盘层的方向上，所述单层结构中的各金属材料的含量不同。
3.根据权利要求2所述的发光元件，其特征在于，所述焊料渐变层包括铟和锡，在远离所述焊盘层的方向上，所述焊料渐变层内的铟金属的含量逐渐升高。
4.根据权利要求3所述的发光元件，其特征在于，在远离所述焊盘层的方向上，所述焊料渐变层依次包括第一熔点区、第二熔点区及第三熔点区，所述第一熔点区的熔点范围介于180℃～230℃，所述第二熔点区的熔点范围介于120℃～180℃，所述第三熔点区的熔点范围介于100℃～120℃。
5.根据权利要求4所述的发光元件，其特征在于，所述第一熔点区的铟含量介于0～25％，所述第二熔点区的铟含量介于25％～60％，所述第三熔点区的铟含量介于60％～70％。
6.一种用于焊接发光元件的背板，其特征在于，包括：
背板，所述背板具有用于焊接发光元件的焊盘；
焊料渐变层，设置于所述背板的所述焊盘上，在远离所述焊盘的方向上，所述焊料渐变层的熔点逐渐降低。
7.根据权利要求6所述的背板，其特征在于，所述焊料渐变层为单层结构，所述单层结构包括至少两种金属材料，且在远离所述焊盘的方向上，所述单层结构中的各金属材料的含量不同。
8.根据权利要求7所述的背板，其特征在于，所述焊料渐变层包括铟和锡，在远离所述焊盘的方向上，所述焊料渐变层内的铟金属的含量逐渐升高。
9.根据权利要求8所述的背板，其特征在于，在远离所述焊盘的方向上，所述焊料渐变层依次包括第一熔点区、第二熔点区及第三熔点区，所述第一熔点区的熔点范围介于180℃～230℃，所述第二熔点区的熔点范围介于120℃～180℃，所述第三熔点区的熔点范围介于100℃～120℃。
10.根据权利要求9所述的背板，其特征在于，所述第一熔点区的铟含量介于0～25％，所述第二熔点区的铟含量介于25％～60％，所述第三熔点区的铟含量介于60％～70％。
11.一种显示面板，其特征在于，包括：
背板；
固定在所述背板上的发光元件，所述发光元件为权利要求1～5任一项所述的发光元件，且所述发光元件通过焊盘层上的焊料渐变层焊接于所述背板上。
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