CN117476838A - Flip-chip red light emitting diode with inclined grating light emitting layer and preparation method thereof - Google Patents
Flip-chip red light emitting diode with inclined grating light emitting layer and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
The invention relates to the technical field of light-emitting diodes, in particular to a flip-chip red light-emitting diode with an inclined grating light-emitting layer and a preparation method thereof. The flip red light emitting diode comprises a p-type electrode, a metal reflecting layer, a p-type current expansion layer, a p-type limiting layer, a multiple quantum well active region, an n-type limiting layer, an n-type contact layer and an n-type electrode which are sequentially stacked, wherein the n-type electrode partially covers the surface of the n-type contact layer, the flip red light emitting diode further comprises an inclined grating light emitting layer, and the inclined grating light emitting layer is obliquely arranged on the surface, uncovered by the n-type electrode, of the n-type contact layer. According to the invention, the Bragg reflector and the permanent substrate in the traditional red light emitting diode are replaced by evaporating the high-reflectivity metal reflecting layer on the surface of the p-type current expansion layer, and the light extraction efficiency of the inside of the flip red light emitting diode is effectively improved by preparing the inclined grating light emitting layer on the n-type contact layer.
Description
Technical Field
The invention relates to the technical field of light-emitting diodes, in particular to a flip-chip red light-emitting diode with an inclined grating light-emitting layer and a preparation method thereof.
Background
The red light emitting diode (lighting emitting diode, LED) has the advantages of small volume, long service life, high response speed, high reliability and the like, and is widely applied to various aspects of display screens, traffic lights, signal lights, car lights and the like in modern social life.
An existing AlGaInP (InAlGaP) quaternary red light emitting diode adopts gallium arsenide (GaAs) as a substrate, and a Bragg reflector (DBR), an n-type limiting layer, a multiple quantum well active region, a p-type limiting layer and a p-type GaP window layer are sequentially arranged on the GaAs substrate from bottom to top. The technology of the red light emitting diode has been developed to date, and has high internal quantum efficiency, but external quantum efficiency is low due to low light extraction efficiency. Factors influencing the light extraction efficiency mainly comprise absorption of the gallium arsenide substrate, total internal reflection on the surface of the light emitting layer, and the like.
Various studies have been made in order to improve the light extraction efficiency of the light emitting diode. Aiming at total internal reflection on the surface of the light emitting layer, surface roughening treatment, photon crystal utilization and other methods are adopted, but the methods have limited effects or complex manufacturing; for absorption of gallium arsenide substrate, bragg reflector technology is generally adopted, but due to the fact that the reflection angle of the bragg reflector is relatively narrow, the light reflectivity is large only near normal incidence, and still a considerable part of light can be absorbed by the gallium arsenide substrate, and the bragg reflector is easy to increase the working voltage and unreliability of the red light emitting diode.
Accordingly, there is a need in the art for improvement and development.
Disclosure of Invention
In view of the shortcomings of the prior art, the invention aims to provide a flip-chip red light emitting diode with an inclined grating light emitting layer and a preparation method thereof, and aims to solve the problems that the reflection angle of a Bragg reflector is relatively narrow, part of light is absorbed by a gallium arsenide substrate, and meanwhile, the working voltage and unreliability of the red light emitting diode are increased.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
in a first aspect of the present invention, there is provided a flip-chip red light emitting diode having an inclined grating light emitting layer, wherein the flip-chip red light emitting diode includes a p-type electrode, a metal reflective layer, a p-type current spreading layer, a p-type confinement layer, a multiple quantum well active region, an n-type confinement layer, an n-type contact layer, and an n-type electrode, which are sequentially stacked, the n-type electrode partially covers the surface of the n-type contact layer,
the flip-chip red light emitting diode further comprises an inclined grating light emitting layer, and the inclined grating light emitting layer is obliquely arranged on the surface, uncovered by the n-type electrode, of the n-type contact layer.
Optionally, the metal reflective layer is composed of one or more metal materials in Au, be, zn, sn, ag, cu, and the thickness of the metal reflective layer is 50-200 μm.
Optionally, the inclined grating light-emitting layer is formed by a plurality of inclined grating units distributed at equal intervals, the included angle between each inclined grating unit and the n-type contact layer is 5-85 degrees, and the inclined angle of each inclined grating unit on the n-type contact layer is consistent.
Optionally, the length of each inclined grating unit along the inclined direction is 100-1000nm, and the length of each inclined grating unit along the inclined direction is consistent.
Optionally, the thickness of the inclined grating light-emitting layer is 100-1000nm, the period of the inclined grating light-emitting layer is 100-1000nm, and the duty ratio of the inclined grating light-emitting layer is 0.2-0.8.
Optionally, the p-type current expansion layer is made of p-type gallium phosphide material;
the p-type limiting layer is made of one of a p-type aluminum indium phosphide material and a p-type aluminum gallium indium phosphide material;
the material of the multi-quantum well active region is aluminum gallium indium phosphide material;
the material of the n-type limiting layer is one of an n-type aluminum indium phosphide material and an n-type aluminum gallium indium phosphide material;
the material of the n-type contact layer is a highly doped semiconductor material transparent to red light, such as an n-type aluminum gallium arsenide material or an n-type aluminum indium phosphide material.
According to a second aspect of the present invention, there is provided a method for manufacturing a flip-chip red light emitting diode with an inclined grating light emitting layer, including:
step S1, providing a temporary substrate;
step S2, epitaxially growing a stripping layer on the temporary substrate;
step S3, epitaxially growing an n-type contact layer on the stripping layer;
s4, epitaxially growing an n-type limiting layer on the n-type contact layer;
s5, epitaxially growing a multi-quantum well active region on the n-type limiting layer;
s6, growing a p-type limiting layer on the multi-quantum well active region;
step S7, growing a p-type current expansion layer on the p-type limiting layer;
s8, evaporating a metal reflecting layer on the p-type current expansion layer, and evaporating a p-type electrode on the metal reflecting layer;
step S9, after the step S8 is finished, etching the stripping layer by using an etching solution, and then stripping the temporary substrate;
and S10, preparing an inclined grating light emitting layer and an n-type electrode on the surface of the n-type contact layer, which is away from the p-type current expansion layer.
Optionally, the temporary substrate is a gallium arsenide temporary substrate;
the stripping layer is made of aluminum arsenide material or other high corrosion selective ratio material, and the thickness of the stripping layer is 0.5-10 mu m.
Optionally, the etching solution is selected from one of hydrofluoric acid, sulfuric acid, nitric acid, hydrochloric acid and phosphoric acid, the mass concentration of the etching solution is 1% -50%, and the etching time is 1-3600s.
Optionally, the inclined grating light-emitting layer is prepared on the n-type contact layer through a micro-nano process; or preparing an inclined grating light-emitting layer in advance by utilizing an optical material, and connecting the inclined grating light-emitting layer with the n-type contact layer through a bonding process.
The beneficial effects are that: the invention provides a flip red light emitting diode with an inclined grating light emitting layer, which adopts a metal reflecting layer to replace a Bragg reflector and a gallium arsenide substrate in the traditional red light emitting diode, and the metal reflecting layer can effectively reflect light at any angle back to the front surface of the flip red light emitting diode, and the defect of the increase of working voltage of the flip red light emitting diode caused by the Bragg reflector is avoided. The conventional substrate (i.e. the permanent substrate) of the red light emitting diode is a gallium arsenide substrate, so that the use of the metal reflecting layer as the permanent substrate reduces the use amount of heavy metal arsenic and reduces the pollution of the heavy metal arsenic to the environment. On the other hand, the light which cannot be radiated out of the flip red light emitting diode due to the fact that the angle of total internal reflection is larger than that of the flip red light emitting diode is formed by preparing the inclined grating light emitting layer on the n-type contact layer, and the light is radiated out through coupling conversion with the inclined grating, so that the light extraction efficiency of the interior of the flip red light emitting diode is improved, and the light emitting direction can be regulated and controlled by changing the inclined grating structure.
Drawings
FIG. 1 is a schematic cross-sectional view of a flip-chip red light emitting diode without a metal reflective layer and an inclined grating light-emitting layer according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a flip-chip red light emitting diode with a metal reflective layer and an inclined grating light-emitting layer according to an embodiment of the present invention;
wherein, the reference numerals indicate: 1 is a temporary substrate, 2 is a stripping layer, 3 is an n-type contact layer, 4 is an n-type limiting layer, 5 is a multiple quantum well active region, 6 is a p-type limiting layer, 7 is a p-type current expansion layer, 8 is a metal reflecting layer, 9 is a p-type electrode, 10 is an inclined grating light emitting layer, and 11 is an n-type electrode.
Detailed Description
The invention provides a flip-chip red light emitting diode with an inclined grating light emitting layer and a preparation method thereof, and the invention is further described in detail below for making the purposes, technical schemes and effects of the invention clearer and more definite. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present invention. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
The existing red light emitting diode has the main factors affecting the light extraction efficiency, such as total internal reflection on the surface of the light emitting layer, absorption of light by the gallium arsenide substrate, and the like. Aiming at total internal reflection on the surface of the light emitting layer, surface roughening treatment, photon crystal utilization and other methods are adopted, but the methods have limited effects or complex manufacturing; for absorption of gallium arsenide substrate, bragg reflector technology is generally adopted, but due to the fact that the reflection angle of the bragg reflector is relatively narrow, the light reflectivity is large only near normal incidence, and still a considerable part of light can be absorbed by the gallium arsenide substrate, and the bragg reflector is easy to increase the working voltage and unreliability of the red light emitting diode.
Based on this, an embodiment of the present invention provides a flip-chip red light emitting diode with an inclined grating light emitting layer, as shown in fig. 1 and 2, where the flip-chip red light emitting diode includes a p-type electrode 9, a metal reflective layer 8, a p-type current spreading layer 7, a p-type confinement layer 6, a multiple quantum well active region 5, an n-type confinement layer 4, an n-type contact layer 3, and an n-type electrode 11, which are sequentially stacked, the n-type electrode 11 partially covers the surface of the n-type contact layer 3,
the flip-chip red light emitting diode further comprises an inclined grating light emitting layer 10, wherein the inclined grating light emitting layer 10 is obliquely arranged on the uncovered surface of the n-type electrode 11 of the n-type contact layer 3.
The light-emitting efficiency can be improved by arranging the right-angle grating on the surface of the light-emitting diode, but the light coupling efficiency and the diffraction efficiency control effect are far lower than those of the inclined grating. Aiming at the characteristic of strong optical coupling efficiency of the inclined grating, the embodiment provides the flip red light emitting diode with the inclined grating light emitting layer, which can radiate light which cannot be radiated out due to a total internal reflection angle in the flip red light emitting diode by coupling conversion with the inclined grating through arranging the inclined grating light emitting layer on the n-type contact layer, thereby not only increasing the light extraction efficiency, but also regulating the light emergent direction by changing the inclined grating structure.
For absorption of the gallium arsenide substrate, the Bragg reflector and the gallium arsenide substrate in the traditional red light emitting diode are replaced by the metal reflecting layer, the metal reflecting layer can effectively reflect light of any angle back to the front face of the flip red light emitting diode, and the defect of rising of working voltage of the flip red light emitting diode caused by the Bragg reflector is avoided.
In addition, the use of the metal reflecting layer as a permanent substrate replaces the traditional gallium arsenide permanent substrate, so that the use amount of heavy metal arsenic is reduced, and the pollution of the heavy metal arsenic to the environment is reduced.
The metal reflective layer 8 in this embodiment is a high-reflectivity metal reflective layer. In one embodiment, the metallic reflective layer 8 is comprised of one or more metallic materials in Au, be, zn, sn, ag, cu. By adopting the metal material, the light at any angle can be effectively reflected back to the front surface of the flip-chip red light emitting diode.
In one embodiment, the thickness of the metal reflective layer 8 is 50-200 μm, such as 50 μm, 100 μm, 150 μm, 200 μm, etc. In the thickness range, on one hand, the metal reflecting layer is used as a supporting substrate of the flip-chip red light emitting diode, so that the flip-chip red light emitting diode has certain mechanical strength; on the other hand, too thick a thickness leads to an increase in the manufacturing cost of the flip-chip red light emitting diode.
In one embodiment, the inclined grating light-emitting layer 10 has an angle of 5-85 ° with the n-type contact layer 3. At this inclination angle, a significant improvement in light extraction efficiency can be ensured.
In a preferred embodiment, the angle between the inclined grating light-emitting layer 10 and the n-type contact layer 3 is 30-70 °. At this inclination angle, the light extraction efficiency can be further improved.
In one embodiment, the inclined grating light-emitting layer 10 is formed by a plurality of inclined grating units distributed at equal intervals, the included angle between each inclined grating unit and the n-type contact layer 3 is 5-85 °, and the inclined angle of each inclined grating unit on the n-type contact layer 3 is consistent.
The light emitting direction can be regulated and controlled by changing the structure of the inclined grating, for example, the light emitting direction can be regulated and controlled by changing the included angle between the light emitting layer of the inclined grating and the n-type contact layer.
In one embodiment, each of the inclined grating units has a length in the inclined direction of 100-1000nm, and each of the inclined grating units has a uniform length in the inclined direction.
In one embodiment, the thickness of the inclined grating light-emitting layer 10 is 100-1000nm, the period of the inclined grating light-emitting layer 10 is 100-1000nm, and the duty cycle of the inclined grating light-emitting layer 10 is 0.2-0.8. Wherein the period refers to the distance between two adjacent inclined grating units, and the duty ratio refers to the ratio between the width of each inclined grating unit and the grating period.
In one embodiment, the p-type current spreading layer 7 is made of p-type gallium phosphide.
In one embodiment, the material of the p-type confinement layer 6 is one of a p-type aluminum indium phosphide material and a p-type aluminum gallium indium phosphide material.
In one embodiment, the multiple quantum well active region 5 is composed of different compositions of aluminum gallium indium phosphide, each of which is denoted as In 0.5 (Al x Ga 1-x ) 0.5 P and In 0.5 (Al y Ga 1-y ) 0.5 P, wherein x is 0-1, y is 0-1, and x and y have different values.
In one embodiment, the material of the n-type confinement layer 4 is one of an n-type aluminum indium phosphide material and an n-type aluminum gallium indium phosphide material.
In one embodiment, the material of the n-type contact layer 3 is a highly doped semiconductor material transparent to red light, such as n-type aluminum gallium arsenide or n-type aluminum indium phosphide material; of course, opaque n-type gallium arsenide may also be used, but the n-type contact area needs to be reduced to conform to the n-type electrode. The n-type contact layer is mainly used for forming ohmic contact with the n-type electrode.
Referring to fig. 1-2, the embodiment of the invention further provides a method for preparing a flip-chip red light emitting diode with an inclined grating light emitting layer, which includes:
step S1, providing a temporary substrate 1;
step S2, epitaxially growing a stripping layer 2 on the temporary substrate 1;
step S3, epitaxially growing an n-type contact layer 3 on the stripping layer 2;
step S4, epitaxially growing an n-type limiting layer 4 on the n-type contact layer 3;
step S5, epitaxially growing a multi-quantum well active region 5 on the n-type limiting layer 4;
step S6, growing a p-type limiting layer 6 on the multi-quantum well active region 5;
step S7, growing a p-type current expansion layer 7 on the p-type limiting layer 6;
step S8, evaporating a metal reflecting layer 8 on the p-type current expansion layer 7, and then evaporating a p-type electrode 9 on the metal reflecting layer 8;
step S9, after the evaporation of the p-type electrode is finished, etching the stripping layer 2 by using an etching solution, and then stripping the temporary substrate 1;
and S10, preparing an inclined grating light emitting layer 10 and an n-type electrode 11 on the surface of the n-type contact layer 3 facing away from the p-type current expansion layer 7.
In this embodiment, the flipped red light emitting diode may be cut, so that the flipped red light emitting diode is cut into a flipped red light emitting diode with a desired size.
The embodiment adopts the technical steps of evaporating the metal reflecting layer on the p-type current expansion layer, and the metal reflecting layer can be used as a permanent substrate, so that the traditional process of preparing the metal reflecting layer and bonding the metal reflecting layer to the substrate is avoided, and the technical steps are simplified.
In one embodiment, in the step S1, the temporary substrate 1 is a gallium arsenide temporary substrate.
In one embodiment, in the step S2, the peeling layer 2 is an aluminum arsenide peeling layer. Of course, the present invention is not limited to aluminum arsenide release layers, and other release layers may be selected. The peeling layer is selected according to the principle that common acid and alkali can be used for etching, so that the temporary substrate is peeled off, and the peeling layer has a higher etching selection ratio with adjacent materials (the temporary substrate and the n-type contact layer).
In one embodiment, the thickness of the release layer 2 is 0.5-10 μm. The thickness can ensure that the stripping layer can be corroded and stripped on one hand, and the epitaxial cost can not be increased due to the fact that the stripping layer is too thick on the other hand.
In one embodiment, the specific process of step S9 is as follows: after the end of step S8, the release layer 2 is etched inward from the edge by an etching solution until the temporary substrate 1 and the n-type contact layer 3 are separated from each other, and then the temporary substrate 1 is peeled off to make the n-type contact layer 3 a new surface.
The temporary substrate (such as a gallium arsenide temporary substrate) 1 can be thoroughly stripped by adopting the method, and the stripped temporary substrate 1 can be reused after being treated.
In one embodiment, the etching solution is selected from one or more of hydrofluoric acid, sulfuric acid, nitric acid, hydrochloric acid, and phosphoric acid.
In one embodiment, the etching solution has a mass concentration of 1% -50%, such as 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, or the like.
In one embodiment, the etching time is 1-3600s, such as 1s, 10s, 50s, 150s, 200s, 250s, 300s, 500s, 800s, 1000s, 1500s, 2000s, 2500s, 3000s, 3100s, 3200s, 3500s or 3600s, etc.
In one embodiment, the inclined grating light-emitting layer 10 is prepared on the n-type contact layer 3 by a micro-nano process; alternatively, optical materials (e.g. GaP, siO 2 、MgF 2 Epoxy resin, etc.) to prepare the inclined grating light-emitting layer 10 in advance, and then connecting the inclined grating light-emitting layer 10 with the n-type contact layer 3 through a bonding process.
In summary, according to the invention, on one hand, the high-reflectivity metal reflecting layer is prepared on the surface of the p-type current expansion layer to replace the Bragg reflector and the permanent substrate in the traditional red light emitting diode, so that the reflectivity is improved, and meanwhile, the defect of increasing of the working voltage of the flip red light emitting diode caused by the Bragg reflector is avoided. On the other hand, the light which cannot be radiated out of the red light emitting diode due to the fact that the angle of total internal reflection is larger than that of the red light emitting diode is radiated out through coupling conversion with the inclined grating, so that the light extraction efficiency of the inside of the flip red light emitting diode is improved, and the light emergent direction can be regulated and controlled through changing the inclined grating structure.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. A flip red light emitting diode with an inclined grating light emitting layer is characterized in that the flip red light emitting diode comprises a p-type electrode, a metal reflecting layer, a p-type current expansion layer, a p-type limiting layer, a multiple quantum well active region, an n-type limiting layer, an n-type contact layer and an n-type electrode which are sequentially stacked, wherein the n-type electrode partially covers the surface of the n-type contact layer,
the flip-chip red light emitting diode further comprises an inclined grating light emitting layer, and the inclined grating light emitting layer is obliquely arranged on the surface, uncovered by the n-type electrode, of the n-type contact layer.
2. The flip-chip red light emitting diode with tilted grating light-emitting layer of claim 1, wherein the metal reflective layer is comprised of one or more metal materials in Au, be, zn, sn, ag, cu, and the thickness of the metal reflective layer is 50-200 μm.
3. The flip-chip red light emitting diode with an inclined grating light emitting layer according to claim 1, wherein the inclined grating light emitting layer is composed of a plurality of inclined grating units distributed at equal intervals, the included angle between each inclined grating unit and the n-type contact layer is 5-85 degrees, and the inclined angle of each inclined grating unit on the n-type contact layer is consistent.
4. The flip-chip red light emitting diode with an inclined grating light-emitting layer according to claim 3, wherein the length of each inclined grating unit in the inclined direction is 100-1000nm, and the length of each inclined grating unit in the inclined direction is uniform.
5. The flip-chip red light emitting diode with an inclined grating light-emitting layer according to claim 1, wherein the thickness of the inclined grating light-emitting layer is 100-1000nm, the period of the inclined grating light-emitting layer is 100-1000nm, and the duty cycle of the inclined grating light-emitting layer is 0.2-0.8.
6. The flip-chip red light emitting diode with tilted grating light-emitting layer of claim 1, wherein the p-type current spreading layer is a p-type gallium phosphide material;
the p-type limiting layer is made of one of a p-type aluminum indium phosphide material and a p-type aluminum gallium indium phosphide material;
the material of the multi-quantum well active region is aluminum gallium indium phosphide material;
the material of the n-type limiting layer is one of an n-type aluminum indium phosphide material and an n-type aluminum gallium indium phosphide material;
the material of the n-type contact layer is one of an n-type aluminum gallium arsenide material and an n-type aluminum indium phosphide material.
7. A method of making a flip-chip red light emitting diode having an inclined grating light emitting layer as claimed in any one of claims 1-6, comprising:
step S1, providing a temporary substrate;
step S2, epitaxially growing a stripping layer on the temporary substrate;
step S3, epitaxially growing an n-type contact layer on the stripping layer;
s4, epitaxially growing an n-type limiting layer on the n-type contact layer;
s5, epitaxially growing a multi-quantum well active region on the n-type limiting layer;
s6, growing a p-type limiting layer on the multi-quantum well active region;
step S7, growing a p-type current expansion layer on the p-type limiting layer;
s8, evaporating a metal reflecting layer on the p-type current expansion layer, and evaporating a p-type electrode on the metal reflecting layer;
step S9, after the step S8 is finished, etching the stripping layer by using an etching solution, and then stripping the temporary substrate;
and S10, preparing an inclined grating light emitting layer and an n-type electrode on the surface of the n-type contact layer, which is away from the p-type current expansion layer.
8. The method for manufacturing a flip-chip red light emitting diode with an inclined grating light emitting layer according to claim 7, wherein the temporary substrate is a gallium arsenide temporary substrate;
the stripping layer is made of aluminum arsenide, and the thickness of the stripping layer is 0.5-10 mu m.
9. The method for preparing the flip-chip red light-emitting diode with the inclined grating light-emitting layer according to claim 7, wherein the etching liquid is selected from one of hydrofluoric acid, sulfuric acid, nitric acid, hydrochloric acid and phosphoric acid, the mass concentration of the etching liquid is 1% -50%, and the etching time is 1-3600s.
10. The method for manufacturing a flip-chip red light emitting diode with an inclined grating light emitting layer according to claim 7, wherein the inclined grating light emitting layer is manufactured on the n-type contact layer by a micro-nano process; or preparing an inclined grating light-emitting layer in advance by utilizing an optical material, and connecting the inclined grating light-emitting layer with the n-type contact layer through a bonding process.
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