CN117476823A - Manufacturing method of light-emitting structure and light-emitting structure - Google Patents

Manufacturing method of light-emitting structure and light-emitting structure Download PDF

Info

Publication number
CN117476823A
CN117476823A CN202311366736.6A CN202311366736A CN117476823A CN 117476823 A CN117476823 A CN 117476823A CN 202311366736 A CN202311366736 A CN 202311366736A CN 117476823 A CN117476823 A CN 117476823A
Authority
CN
China
Prior art keywords
light emitting
emitting unit
cutting
area
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311366736.6A
Other languages
Chinese (zh)
Inventor
周志圣
姜建兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Stan Technology Co Ltd
Original Assignee
Shenzhen Stan Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Stan Technology Co Ltd filed Critical Shenzhen Stan Technology Co Ltd
Priority to CN202311366736.6A priority Critical patent/CN117476823A/en
Publication of CN117476823A publication Critical patent/CN117476823A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

The manufacturing method of the light-emitting structure and the light-emitting structure provided by the embodiment of the disclosure comprise the following steps: cutting the initial epitaxial structure to form a plurality of sub-epitaxial structures, wherein the sub-epitaxial structures formed by cutting comprise a light-emitting unit and a target substrate, the target substrate comprises a first area and a second area, and the first area is attached to the light-emitting unit; bonding the sub-epitaxial structure with the driving structure; and applying a target driving force to a surface of the second region of the target substrate, which is close to the light emitting unit, so as to separate the target substrate from the light emitting unit. The substrate of the initial epitaxial structure is cut to form a plurality of sub-epitaxial structures, the target substrate of the formed sub-epitaxial structure comprises a first area and a second area, the light emitting unit is arranged in the first area, namely, the target substrate of the sub-epitaxial structure formed by cutting is additionally reserved with a second area, and therefore the target substrate of the sub-epitaxial structure is peeled off by applying acting force to the second area, namely, a supporting point for providing acting force for the second area.

Description

Manufacturing method of light-emitting structure and light-emitting structure
Technical Field
Embodiments of the present disclosure relate to the field of light emitting technology and related technology, and in particular, to a manufacturing method applicable to a light emitting structure and a light emitting structure.
Background
In the prior art, after the light-emitting structure is bound and combined with the driving chip, the growth substrate of the light-emitting structure is removed by laser stripping. Since the laser lift-off is performed after the light emitting structure is bound to the driving chip, in this process, the laser inevitably irradiates the back plate of the driving chip, so that the circuit or the active layer on the back plate of the driving chip, such as (low temperature polysilicon LPTS), is broken or the crystal structure is changed, resulting in abnormal display.
Disclosure of Invention
Embodiments described herein provide a light emitting structure and a method of manufacturing the same, which solve the problems of the prior art.
According to a first aspect of the present disclosure, there is provided a method for manufacturing a light emitting structure, including:
cutting the initial epitaxial structure to form a plurality of sub-epitaxial structures, wherein the sub-epitaxial structures formed by cutting comprise a light-emitting unit and a target substrate, the target substrate comprises a first area and a second area, and the first area is attached to the light-emitting unit;
bonding the sub-epitaxial structure with a driving structure;
and applying a target driving force to one surface of the second region of the target substrate, which is close to the light-emitting unit, so as to separate the target substrate from the light-emitting unit.
In some embodiments of the present disclosure, before the cutting the initial epitaxial structure to form the plurality of sub-epitaxial structures, the method further includes:
and acquiring image information of an initial epitaxial structure, wherein the initial epitaxial structure comprises light emitting units formed on a substrate in array arrangement.
In some embodiments of the present disclosure, the dicing the initial epitaxial structure to form a plurality of sub-epitaxial structures includes:
determining a cutting area and a cutting position according to the image information;
and cutting the initial epitaxial structure according to the cutting area and the cutting position to form a plurality of sub-epitaxial structures.
In some embodiments of the present disclosure, the determining a cutting area and a cutting position according to the image information includes:
and determining a cutting area and a cutting position according to the position information of the light emitting units on the substrate, which is determined by the image information, and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit.
In some embodiments of the present disclosure, determining the position information of the light emitting units on the substrate and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit according to the image information, includes:
selecting any one of two areas adjacent to the wire bonding position as a cutting area according to the wire bonding position; or alternatively, the first and second heat exchangers may be,
selecting an area opposite to the wire bonding position as a cutting area according to the wire bonding position;
and determining a cutting position according to the position information of the light emitting unit on the substrate and the position relation between the wire bonding position and the cutting area.
In some embodiments of the present disclosure, determining the position information of the light emitting units on the substrate and the routing positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit according to the image information, where determining the cutting area and the cutting position includes:
and if one area opposite to the wire bonding position is selected as a cutting area, the cutting position is positioned between the light emitting unit and the wire bonding position corresponding to the light emitting unit adjacent to the light emitting unit.
In some embodiments of the present disclosure, determining the position information of the light emitting units on the substrate and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit according to the image information, includes:
and if any one of the two areas adjacent to the wire bonding position is selected as a cutting area, the cutting position is positioned between the two light emitting units adjacent to the cutting area.
In some embodiments of the present disclosure, before the target driving force is applied to a surface of the second region of the target substrate, which is close to the light emitting unit, to separate the target substrate from the light emitting unit, the method further includes:
determining an action position of the target driving force on the second area;
and applying a target driving force to an application position of one surface of the second region, which is close to the light-emitting unit, so as to separate the target substrate from the light-emitting unit.
In some embodiments of the present disclosure, before the target driving force is applied to a surface of the second region of the target substrate, which is close to the light emitting unit, to separate the target substrate from the light emitting unit, the method further includes:
the target driving force is determined based on the size information of the light emitting unit formed by cutting and the size information of the second region of the light emitting unit formed by cutting.
According to a second aspect of the present disclosure, there is provided a light emitting structure formed by the method of any one of the first aspects.
According to the manufacturing method of the light-emitting structure and the light-emitting structure, firstly, the initial epitaxial structure is cut to form a plurality of sub-epitaxial structures, wherein the sub-epitaxial structures formed by cutting comprise a light-emitting unit and a target substrate, the target substrate comprises a first area and a second area, and the first area is attached to the light-emitting unit; bonding the sub-epitaxial structure and the driving structure; and finally, applying a target driving force to one surface, close to the light-emitting unit, of the second area of the target substrate so as to separate the target substrate from the light-emitting unit. That is, a plurality of sub-epitaxial structures are formed by cutting a substrate of an initial epitaxial structure, the formed sub-epitaxial structure comprises a light emitting unit and a target substrate, the target substrate comprises a first area and a second area, the light emitting unit is arranged in the first area, namely, the target substrate of the sub-epitaxial structure formed by cutting additionally reserves a second area, so that the target substrate included in the sub-epitaxial structure is peeled off by applying a force to the second area, namely, a supporting point for providing a force in the second area, and the target substrate is separated from the light emitting unit easily in the peeling process, the target substrate is not damaged easily, and the efficiency of peeling the target substrate is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following brief description of the drawings of the embodiments will be given, it being understood that the drawings described below relate only to some embodiments of the present disclosure, not to limitations of the present disclosure, in which:
fig. 1 is a schematic flow chart of a method for peeling a substrate with a light emitting structure according to an embodiment of the disclosure;
fig. 2A is a schematic structural view of an initial epitaxial structure provided in an embodiment of the present disclosure;
fig. 2B is a schematic structural view of a cut light emitting structure according to an embodiment of the present disclosure;
fig. 2C is a schematic cross-sectional structure of a cut light emitting structure according to an embodiment of the present disclosure;
fig. 3 is a schematic flow chart of another method for peeling a substrate with a light emitting structure according to an embodiment of the disclosure;
fig. 4A is a schematic structural view of another initial epitaxial structure provided by an embodiment of the present disclosure;
fig. 4B is a schematic structural view of yet another initial epitaxial structure provided by an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by those skilled in the art based on the described embodiments of the present disclosure without the need for creative efforts, are also within the scope of the protection of the present disclosure.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the presently disclosed subject matter belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the specification and relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. As used herein, a statement that two or more parts are "connected" or "coupled" together shall mean that the parts are joined together either directly or joined through one or more intermediate parts.
In all embodiments of the present disclosure, terms such as "first" and "second" are used merely to distinguish one component (or portion of a component) from another component (or portion of a component).
As used herein and in the appended claims, the singular forms of words include the plural and vice versa, unless the context clearly dictates otherwise. Thus, when referring to the singular, the plural of the corresponding term is generally included. Similarly, the terms "comprising" and "including" are to be construed as being inclusive rather than exclusive. Likewise, the terms "comprising" and "or" should be interpreted as inclusive, unless such an interpretation is expressly prohibited herein. Where the term "example" is used herein, particularly when it follows a set of terms, the "example" is merely exemplary and illustrative and should not be considered exclusive or broad.
Based on the problems existing in the prior art, an embodiment of the present disclosure provides a method for manufacturing a light emitting structure, and fig. 1 is a schematic flow chart of the method for manufacturing a light emitting structure provided in the embodiment of the present disclosure, as shown in fig. 1, the method for manufacturing a light emitting structure includes:
s120, cutting the initial epitaxial structure to form a plurality of sub-epitaxial structures.
The sub-epitaxial structure formed by cutting comprises a light-emitting unit and a target substrate, wherein the target substrate comprises a first area and a second area, and the first area is attached to the light-emitting unit.
The initial epitaxial structure includes light emitting cells formed in an array arrangement on a substrate.
In the preparation process of the light-emitting structure, in order to realize an automatic process and improve the efficiency of the preparation process, firstly, light-emitting units which are arranged in an array are formed on a substrate, then, the substrate is cut to form a plurality of sub-epitaxial structures through an automatic cutting process, each sub-epitaxial structure formed by cutting comprises a target substrate and the light-emitting units, each light-emitting unit at least comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacked mode, then, the sub-epitaxial structure formed by cutting is bonded with a driving structure, and finally, the target substrate of the sub-epitaxial structure is peeled off through a peeling process to form the light-emitting structure.
In some embodiments, the first semiconductor layer of each light emitting cell is a P-type semiconductor layer, an exemplary P-type semiconductor layer is a P-type doped nitride layer, such as P-GaN, the first semiconductor layer provides holes to the light emitting layer under the action of an electrical signal, the second semiconductor layer is an N-type semiconductor layer, an exemplary N-type semiconductor layer is an N-type doped nitride layer, such as N-GaN, and the second semiconductor layer provides electrons to the light emitting layer under the action of an electrical signal. The light emitting layer may be a Quantum Well (QW) structure. In some embodiments, the light emitting layer may also be a multiple quantum well structure (Multiple Quantum Well, MQW for short). The first semiconductor layer provides holes for the light-emitting layer under the action of an electric signal, and the second semiconductor layer provides electrons for the light-emitting layer under the action of the electric signal, and then the electrons and the holes in the light-emitting layer can be combined to generate energy, so that the energy generated in the combining process is released in a light-emitting mode, and the light-emitting unit emits light. The driving structure is used for providing an electric signal (voltage signal or current signal) for driving the light-emitting structure to emit light, and the light-emitting unit emits light under the electric signal provided by the driving structure.
And S130, bonding the sub-epitaxial structure and the driving structure.
After a plurality of sub-epitaxial structures are formed through cutting, one side, far away from the target substrate, of each sub-epitaxial structure is bonded with a driving structure to form an intermediate structure, and the sub-epitaxial structures are bonded with the driving structure, so that light emission of the light emitting unit is realized based on driving signals provided by the driving structure.
And S140, applying a target driving force to one surface, close to the light-emitting unit, of the second region of the target substrate so as to separate the target substrate from the light-emitting unit.
After the initial epitaxial structure is cut to form a plurality of sub-epitaxial structures based on the cutting process, the target object can be triggered and operated at the terminal equipment, the terminal equipment responds to the triggering operation of the target object, and the target driving force acts on one surface, close to the light-emitting unit, of the second area of the target substrate, so that the target substrate is separated from the light-emitting unit.
Specifically, since the light emitting unit is formed in the first region of the target substrate and the second region is free from the formed light emitting unit, the target driving force can be applied to the second region in the side of the target substrate close to the light emitting unit, and the separation of the target substrate from the light emitting unit can be achieved by the target driving force.
As an achievable manner, after the initial epitaxial structure is cut to form a plurality of sub-epitaxial structures based on the cutting device, the sub-epitaxial structures are sequentially moved to a target position for providing driving force, then position information corresponding to a second area of the sub-epitaxial structures at the target position is obtained, and finally a mechanical arm or a driving device for providing the target driving force is moved to the second area according to the position information of the second area, so that the target substrate and the light-emitting unit are separated.
As an example, as shown in fig. 2A, the initial epitaxial structure includes four light emitting units 20 arrayed on the substrate 10, which are denoted by 20A, 20B, 20C, and 20D, respectively, and as an example, the sub-epitaxial structure formed by dicing includes a target substrate 11 and light emitting units 20A, the target substrate 11 includes a first region 11A and a second region 11B, and the light emitting units 20A are disposed in the first region 11A, as shown in fig. 2B and 2C. That is, when the initial epitaxial structure is cut, a part of the substrate, namely, the substrate corresponding to the second area is reserved, and then the target substrate included in the light-emitting structure is peeled off by applying a force to the second area, namely, a supporting point for providing the force by the second area, so that the efficiency of peeling off the target substrate is improved.
According to the manufacturing method of the light-emitting structure, firstly, an initial epitaxial structure is cut to form a plurality of sub-epitaxial structures, wherein the sub-epitaxial structures formed by cutting comprise a light-emitting unit and a target substrate, the target substrate comprises a first area and a second area, and the first area is attached to the light-emitting unit; bonding the sub-epitaxial structure and the driving structure; and finally, applying a target driving force to one surface, close to the light-emitting unit, of the second area of the target substrate so as to separate the target substrate from the light-emitting unit. That is, a plurality of sub-epitaxial structures are formed by cutting a substrate of an initial epitaxial structure, the formed sub-epitaxial structure comprises a light emitting unit and a target substrate, the target substrate comprises a first area and a second area, the light emitting unit is arranged in the first area, namely, the target substrate of the sub-epitaxial structure formed by cutting additionally reserves a second area, so that the target substrate included in the sub-epitaxial structure is peeled off by applying a force to the second area, namely, a supporting point for providing a force in the second area, and the target substrate is separated from the light emitting unit easily in the peeling process, the target substrate is not damaged easily, and the efficiency of peeling the target substrate is improved.
As an implementation manner, fig. 3 is a schematic flow chart of a method for manufacturing another light emitting structure according to an embodiment of the present disclosure, where, based on the foregoing embodiment, as shown in fig. 3, before step S120, the method further includes:
s110, acquiring image information of the initial epitaxial structure.
The initial epitaxial structure comprises light emitting units which are formed on a substrate and arranged in an array mode.
In order to realize that a plurality of sub-epitaxial structures are formed by cutting an initial epitaxial structure, a scanning photographing button is triggered on a scanning device, and image information of the initial epitaxial structure is obtained based on a scanning photographing function of the scanning device, wherein the obtained image information of the initial epitaxial structure reflects position information of each luminous unit included in the initial epitaxial structure.
When the method for manufacturing the light emitting structure includes the step S110, the specific embodiment of the step S120 is as follows:
s121, determining a cutting area and a cutting position according to the image information.
S122, cutting the initial epitaxial structure according to the cutting area and the cutting position to form a plurality of sub-epitaxial structures.
After step S110 is performed, by analyzing the image information of the initial epitaxial structure, the position information of the light emitting units in the initial epitaxial structure and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit can be determined.
As an example, if the mode of acquiring the image information of the initial epitaxial structure is an infrared scanning mode, the initial epitaxial structure is scanned by infrared light emitted by the scanning device, and the position information of the light emitting unit and the wire bonding positions of the driving circuit and the flexible circuit board are determined according to the infrared scanning result of the scanning device.
The image information of the initial epitaxial structure is obtained, and then the initial epitaxial structure is cut according to the image information to form a plurality of sub-epitaxial structures, so that damage to the light-emitting unit in the process of cutting the substrate can be avoided, and the product yield is influenced.
Wherein determining the cutting area and the cutting position according to the image information comprises: and determining a cutting area and a cutting position according to the position information of the light emitting unit on the substrate and the wire bonding positions of the driving circuit and the flexible circuit board, which are determined by the image information.
In a specific implementation process, the light emitting unit is electrically connected with the driving structure, an electrical signal emitted by the light emitting unit is provided through the driving structure, in addition, the driving structure comprises a driving circuit and a flexible circuit board metal wiring, and the electrical signal acts on the driving circuit through the metal wiring so as to provide a driving signal to the light emitting unit through the driving circuit. Therefore, before the initial epitaxial structure is cut, the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure are determined through the image information, and then the cutting area is determined according to the wire bonding positions of the driving circuit and the flexible circuit in the driving structure, namely, the non-wire bonding position is selected as the cutting area.
Specifically, referring to fig. 2A, as shown in fig. 2A, the initial epitaxial structure includes four light emitting units 20 arranged on a substrate 10 in an array, the four light emitting units are respectively indicated by 20A, 20B, 20C and 20D, a bonding area of a driving circuit corresponding to the light emitting unit 20A and a flexible circuit board is 30A, a bonding area of a driving circuit corresponding to the light emitting unit 20B and a flexible circuit board is 30B, a bonding area of a driving circuit corresponding to the light emitting unit 20C and a flexible circuit board is 30C, and a bonding area of a driving circuit corresponding to the light emitting unit 20D and a flexible circuit board is 30D.
As one embodiment, determining a cutting area according to a wire bonding position of a driving circuit and a flexible circuit board includes: and selecting an area opposite to the wire bonding position as a cutting area according to the wire bonding position.
Specifically, if the area 40 in fig. 4A is selected as the cutting area, the cutting area 40 corresponds to the area where the bonding position in the light emitting unit is located.
When a region opposite to the wire bonding position is selected as the cutting region, the determined cutting position is located between the light emitting unit and the wire bonding position corresponding to the light emitting unit adjacent to the light emitting unit according to the position information of the light emitting unit on the substrate.
Referring to fig. 4A, if the area 40 is selected as the cutting area, at this time, it is determined that the cutting position corresponding to the light emitting unit 20A is located between the wire bonding position 30B corresponding to the light emitting unit 20B adjacent to the light emitting unit 20A and the light emitting unit 20A, that is, the area 40A shown in fig. 4A, damage to the driving circuit corresponding to the light emitting unit 20A and the wire bonding area PAD of the flexible circuit board in the cutting process can be avoided, and damage to the driving circuit corresponding to the light emitting unit 20B and the wire bonding area PAD of the flexible circuit board in the cutting process can be avoided.
As another embodiment, determining the cutting area according to the wire bonding positions of the driving circuit and the flexible circuit board includes: and selecting any one of two areas adjacent to the wire bonding position as a cutting area according to the wire bonding position.
Specifically, if the area 401 or the area 402 in fig. 4B is selected as the cutting area, the cutting area 401 and the cutting area 402 are adjacent to and correspond to the area where the bonding position in the light emitting unit is located.
When any one of the two areas adjacent to the wire bonding position is selected as the cutting area, the determined cutting position is located between the two light emitting units adjacent to the cutting area according to the position information of the light emitting units on the substrate at this time.
Referring to fig. 4B, if the area 401 is selected as the cutting area, at this time, it is determined that the cutting position corresponding to the light emitting unit 20A is located between the light emitting unit 20A and the light emitting unit 20C adjacent to the light emitting unit 20A, and if the area 402 is selected as the cutting area, at this time, it is determined that the cutting position corresponding to the light emitting unit 20A is located between the light emitting unit 20A and the light emitting unit 20E adjacent to the light emitting unit 20A, so that damage to the driving circuit corresponding to the light emitting unit 20A and the bonding area PAD of the flexible circuit board during the cutting process can be avoided.
In the above embodiment, it is preferable to select any one of the areas adjacent to the area where the bonding position is located as the cutting area.
In addition, in the above embodiment, the cutting position is determined by determining the position information of the light emitting unit on the substrate and the positional relationship between the wire bonding position and the cutting area, which are included in the light emitting panel, so that damage to the light emitting unit in the process of cutting the substrate is avoided, and the product yield is affected.
In a specific embodiment, cutting the substrate of the light emitting panel according to the positional information of the light emitting unit on the substrate to form a plurality of light emitting structures includes: determining a cutting position according to the position information of the light emitting unit on the substrate and the position relation between the wire bonding position and the cutting area; and cutting the substrate at the position corresponding to the cutting position to form a plurality of light-emitting structures.
As a specific embodiment, the specific process of cutting the substrate of the light emitting panel to form a plurality of light emitting structures is as follows: firstly, determining a cutting position according to the position information of the light emitting units on the substrate and the position relation between the wire bonding position and the cutting area, which are acquired in the step S120, wherein the cutting position is positioned between two adjacent light emitting units of the light emitting plate, the cutting position needs to ensure that a target substrate corresponding to a light emitting structure formed by cutting comprises a first area and a second area, the light emitting units are arranged in the first area, and a target driving force acts on the second area.
In a specific implementation manner, in the method for manufacturing a light emitting structure provided in the embodiment of the present disclosure, before applying the target driving force to the surface of the second area of the target substrate, which is close to the light emitting unit, so as to separate the target substrate from the light emitting unit, the method further includes:
the position of action of the target driving force on the second region is determined.
According to the mechanics principle, the longer the driving device acts on the second area of the target substrate, which is close to one side of the light-emitting unit, the longer the arm length, the easier the target substrate is separated from the light-emitting unit under the action of the same target driving force, so that the separation of the target substrate and the light-emitting unit can be realized under the smaller action force by determining the acting position of the target driving force on the second area, and the separation efficiency of the target substrate and the light-emitting unit is improved.
At this time, a target driving force is applied to an application position of the second region near one face of the light emitting unit to achieve separation of the target substrate from the light emitting unit.
As a specific embodiment, in response to a trigger operation of the target object, a target driving force is applied to an application position of a face of the second region near the light emitting unit to achieve separation of the target substrate from the light emitting unit.
In a specific embodiment, when the target object performs a triggering operation on the terminal device, the terminal device responds to the triggering operation of the target object, determines a target driving force corresponding to the triggering operation of the target object according to the triggering operation of the target object, and then the terminal device applies the target driving force to the acting position to separate the target substrate from the light-emitting substrate through the target driving force.
It should be noted that, in the process that the terminal device responds to the triggering operation of the target object and determines the target driving force corresponding to the triggering operation of the target object according to the triggering operation of the target object, the user can self-define and select the target driving force of the second area of the target substrate, so as to avoid that the target driving force acting on the second area of the target substrate is smaller and cannot separate the target substrate from the light-emitting unit, or the target driving force acting on the second area of the target substrate is too large and damages the light-emitting unit in the process of separating the target substrate from the light-emitting unit.
According to the manufacturing method of the light-emitting structure, firstly, image information of an initial epitaxial structure is obtained, and then, according to the image information, position information of light-emitting units on a substrate and routing positions of a driving circuit and a flexible circuit board in a driving structure corresponding to each light-emitting unit are obtained; determining a cutting area according to the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light-emitting unit; determining a cutting position according to the position information of the light emitting unit on the substrate and the position relation between the wire bonding position and the cutting area; and finally, cutting the initial epitaxial structure at the cutting position to form a plurality of sub-epitaxial structures. Namely, by determining the wire bonding position between two adjacent light emitting units and determining the cutting position, the scratch on the metal wire at the wire bonding position of the driving circuit and the flexible circuit board when the initial epitaxial structure is cut in a cutting mode can be avoided, and the yield of an automatic process is ensured.
On the basis of the above embodiments, the embodiments of the present disclosure further provide a light emitting structure, which is formed by using the method described in the above embodiments, and has the beneficial effects of any one of the above embodiments.
As used herein and in the appended claims, the singular forms of words include the plural and vice versa, unless the context clearly dictates otherwise. Thus, when referring to the singular, the plural of the corresponding term is generally included. Similarly, the terms "comprising" and "including" are to be construed as being inclusive rather than exclusive. Likewise, the terms "comprising" and "or" should be interpreted as inclusive, unless such an interpretation is expressly prohibited herein. Where the term "example" is used herein, particularly when it follows a set of terms, the "example" is merely exemplary and illustrative and should not be considered exclusive or broad.
Further aspects and scope of applicability will become apparent from the description provided herein. It should be understood that various aspects of the present application may be implemented alone or in combination with one or more other aspects. It should also be understood that the description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.
While several embodiments of the present disclosure have been described in detail, it will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present disclosure without departing from the spirit and scope of the disclosure. The scope of the present disclosure is defined by the appended claims.

Claims (10)

1. A method for manufacturing a light emitting structure, comprising:
cutting the initial epitaxial structure to form a plurality of sub-epitaxial structures, wherein the sub-epitaxial structures formed by cutting comprise a light-emitting unit and a target substrate, the target substrate comprises a first area and a second area, and the first area is attached to the light-emitting unit;
bonding the sub-epitaxial structure with a driving structure;
and applying a target driving force to one surface of the second region of the target substrate, which is close to the light-emitting unit, so as to separate the target substrate from the light-emitting unit.
2. The method of claim 1, wherein prior to dicing the initial epitaxial structure to form a plurality of sub-epitaxial structures, further comprising:
and acquiring image information of an initial epitaxial structure, wherein the initial epitaxial structure comprises light emitting units formed on a substrate in array arrangement.
3. The method of claim 2, wherein dicing the initial epitaxial structure to form a plurality of sub-epitaxial structures comprises:
determining a cutting area and a cutting position according to the image information;
and cutting the initial epitaxial structure according to the cutting area and the cutting position to form a plurality of sub-epitaxial structures.
4. A method according to claim 3, wherein said determining a cutting area and a cutting position from said image information comprises:
and determining a cutting area and a cutting position according to the position information of the light emitting units on the substrate, which is determined by the image information, and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit.
5. The method of claim 4, wherein determining the cutting area and the cutting position according to the position information of the light emitting units on the substrate and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit, which are determined according to the image information, comprises:
selecting any one of two areas adjacent to the wire bonding position as a cutting area according to the wire bonding position; or alternatively, the first and second heat exchangers may be,
selecting an area opposite to the wire bonding position as a cutting area according to the wire bonding position;
and determining a cutting position according to the position information of the light emitting unit on the substrate and the position relation between the wire bonding position and the cutting area.
6. The method of claim 4, wherein determining the position information of the light emitting units on the substrate and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit according to the image information, the determining the cutting area and the cutting position includes:
and if one area opposite to the wire bonding position is selected as a cutting area, the cutting position is positioned between the light emitting unit and the wire bonding position corresponding to the light emitting unit adjacent to the light emitting unit.
7. The method of claim 4, wherein determining the cutting area and the cutting position according to the position information of the light emitting units on the substrate and the wire bonding positions of the driving circuit and the flexible circuit board in the driving structure corresponding to each light emitting unit, which are determined according to the image information, comprises:
and if any one of the two areas adjacent to the wire bonding position is selected as a cutting area, the cutting position is positioned between the two light emitting units adjacent to the cutting area.
8. The method of claim 1, wherein the applying the target driving force to the side of the target substrate second region proximate to the light emitting unit to effect separation of the target substrate from the light emitting unit further comprises:
determining an action position of the target driving force on the second area;
and applying a target driving force to an application position of one surface of the second region, which is close to the light-emitting unit, so as to separate the target substrate from the light-emitting unit.
9. The method of claim 1, wherein the applying the target driving force to the side of the target substrate second region proximate to the light emitting unit to effect separation of the target substrate from the light emitting unit further comprises:
the target driving force is determined based on the size information of the light emitting unit formed by cutting and the size information of the second region of the light emitting unit formed by cutting.
10. A light-emitting structure, characterized in that it is produced by the method according to any one of claims 1 to 9.
CN202311366736.6A 2023-10-20 2023-10-20 Manufacturing method of light-emitting structure and light-emitting structure Pending CN117476823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311366736.6A CN117476823A (en) 2023-10-20 2023-10-20 Manufacturing method of light-emitting structure and light-emitting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311366736.6A CN117476823A (en) 2023-10-20 2023-10-20 Manufacturing method of light-emitting structure and light-emitting structure

Publications (1)

Publication Number Publication Date
CN117476823A true CN117476823A (en) 2024-01-30

Family

ID=89637089

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311366736.6A Pending CN117476823A (en) 2023-10-20 2023-10-20 Manufacturing method of light-emitting structure and light-emitting structure

Country Status (1)

Country Link
CN (1) CN117476823A (en)

Similar Documents

Publication Publication Date Title
US7192797B2 (en) Light emitting device and manufacture method thereof
US8008683B2 (en) Semiconductor light emitting device
CN110416246B (en) Light emitting diode chip array and display panel
US20070126016A1 (en) Light emitting device and manufacture method thereof
US8350276B2 (en) Alternating current light emitting device
US9728934B2 (en) Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods
JP2012099866A (en) Semiconductor chips for optoelectronics and its manufacturing method
KR100878326B1 (en) Direct bonded chip scale packaged light emitting diode and fabrication method thereof
JPH08250768A (en) Semiconductor optical element
KR20080075368A (en) Nitride semiconductor light emitting device and method of manufacturing the same
CN109873060B (en) Method for manufacturing micro light-emitting diode array
JP2000114595A (en) SEMICONDUCTOR LIGHT EMITTING ELEMENT OF GaN COMPOUND
CN114188459B (en) Micro light-emitting diode display device and manufacturing method thereof
KR20120026873A (en) Light emitting device
KR20170001436A (en) Back light unit having light emitting diode
WO2005013382A1 (en) Semiconductor light emitting device
US8574936B2 (en) Semiconductor light emitting device and method for manufacturing the same
US8178886B2 (en) Multi-layered LED epitaxial structure with light emitting unit
JP3797748B2 (en) Light emitting diode array
CN117476823A (en) Manufacturing method of light-emitting structure and light-emitting structure
JP2011114154A (en) Light-emitting element and method of manufacturing light-emitting device using the same
KR20110135103A (en) Semiconductor light emitting device and method of manufacturing the same
CN113644179B (en) Light emitting element, light emitting element array and light emitting device
JP2013532904A (en) Optoelectronic semiconductor component manufacturing method, and optoelectronic semiconductor component
CN218351499U (en) LED device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination