CN117476590A - Double-sided heat dissipation packaging structure and preparation method thereof - Google Patents
Double-sided heat dissipation packaging structure and preparation method thereof Download PDFInfo
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- CN117476590A CN117476590A CN202311824791.5A CN202311824791A CN117476590A CN 117476590 A CN117476590 A CN 117476590A CN 202311824791 A CN202311824791 A CN 202311824791A CN 117476590 A CN117476590 A CN 117476590A
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- 238000009713 electroplating Methods 0.000 claims description 7
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Abstract
The invention discloses a double-sided radiating packaging structure and a preparation method thereof, wherein the packaging structure is formed by bonding an S pole and a G pole of a chip through a specific carrier, and the size of the carrier can be adjusted according to the windowing sizes of the S pole and the G pole of the chip so as to adapt to different MOS chip sizes; the D pole of the chip is arranged on the upper surface of the product, and the copper sheet adhesive structure is matched, so that the product realizes double-sided heat dissipation, and meanwhile, the heat dissipation area with the same size as the upper surface of the product is obtained, the heat dissipation is greatly improved, and the product reliability of the power device is improved; meanwhile, the D pole of the chip is arranged on the upper surface of the power device, and the copper sheet bonding structure is matched, so that the power device product has smaller packaging volume and higher product voltage and power. The preparation method of the packaging structure provided by the invention improves the performance and the production yield of the product.
Description
Technical Field
The invention relates to the technical field of semiconductor power device packaging, in particular to a double-sided heat dissipation packaging structure and a preparation method thereof.
Background
In the existing semiconductor power device packaging manufacturing field, taking surface mount device DFN packaging as an example, a carrier (PAD) is generally arranged in a Lead frame, leads are arranged around the carrier, a D electrode of a MOS tube is connected with the carrier through adhesive glue, S and G electrodes of the MOS tube are bonded with a frame through bonding wires such as gold wires, copper wires and aluminum wires, and a chip is electrically connected with an external circuit by means of the carrier and an outer Lead-out end.
Currently, conventional package structures are used that require the chip size to be smaller than the carrier size. With the development of power device packaging technology, there is a need to package larger chips as much as possible in smaller products in order to reduce the product form factor, provide higher power, better heat dissipation, and less interference and better product electrical performance. The conventional packaging method cannot meet the use requirement of packaging larger chips, so that a packaging structure for packaging larger chips under the same packaging appearance is needed.
Disclosure of Invention
The invention provides a double-sided radiating packaging structure, which is characterized in that an S pole and a G pole of a chip are bonded through a specific carrier, and the size of the carrier can be adjusted according to the windowing sizes of the S pole and the G pole of the chip, so that different MOS chip sizes can be adapted; the D pole of the chip is arranged on the upper surface of the product, and the copper sheet adhesive structure is matched, so that the product realizes double-sided heat dissipation, and meanwhile, the heat dissipation area with the same size as the upper surface of the product is obtained, the heat dissipation is greatly improved, and the product reliability of the power device is improved; meanwhile, the D pole of the chip is arranged on the upper surface of the power device, and the copper sheet bonding structure is matched, so that the power device product has smaller packaging volume and higher product voltage and power.
The second aspect of the invention provides a method for manufacturing the packaging structure, which greatly improves abnormal conditions such as hollowness, dirt, layering and the like of a product through vacuum reflow soldering and solder paste cleaning. The product structure design is combined through the FC upper core and solder paste process, so that the reliability and the electrical performance of the product are greatly improved. Through grinding and cutting processes, the upper surface of the product can be the whole radiating surface, rth of the product is greatly reduced, and a better radiating effect is provided.
The technical scheme provided by the invention is as follows:
a dual sided heat dissipating package structure, comprising:
the chip comprises a lead frame, a chip, a Clip radiating copper sheet and a plastic package body;
the lead frame comprises a frame carrier back, frame D electrode leads and frame G electrode leads, frame connecting ribs are respectively arranged on two sides of the frame carrier back, one end of the frame carrier back is connected with one or more frame S electrode leads, the frame carrier back, the frame connecting ribs and the frame S electrode leads are arranged in a coplanar mode and leak out of a plastic package body after packaging, an S electrode is formed after the frame S electrode leads are subjected to plastic package, and a carrier S electrode connecting surface is arranged on the frame carrier back;
the frame D electrode lead is arranged on one side, far away from the frame S electrode lead, of the back surface of the frame carrier, the number of the frame D electrode lead is one or more, all the frame D electrode leads are arranged on the same pin connecting part, the frame D electrode lead, the pin connecting part and the back surface of the frame carrier are arranged in the same plane, and after the frame D electrode lead and the pin connecting part are subjected to plastic package, a plastic package body is leaked out to form a D electrode, and a carrier D electrode connecting surface is arranged on the back surface of the frame D electrode lead and the pin connecting part;
the frame G electrode lead is arranged on the same side of the frame carrier back and the frame S electrode lead, the frame G electrode lead and the frame carrier back are arranged in a coplanar manner, the frame G electrode lead leaks out of the plastic package after being subjected to plastic package to form an S electrode, and the frame G electrode lead back is provided with a carrier G electrode connecting surface;
one surface of the chip is respectively connected with the carrier S pole connecting surface and the carrier G pole connecting surface, the other surface of the chip is connected with a Clip chip connecting part, and the Clip chip connecting part is connected with the carrier D pole connecting surface; the size of the chip is larger than the size of the back surface of the frame carrier;
the Clip chip connecting part is provided with a Clip radiating copper sheet, and the upper surface and the side surface of the Clip radiating copper sheet leak out of the plastic package to form a Clip radiating surface;
and the Clip chip connecting part and the chip are both encapsulated in the plastic package body.
Further, the solder paste comprises a chip S-electrode solder paste, a lead D-electrode solder paste, a chip D-electrode solder paste and a G-electrode solder paste;
the chip S electrode solder paste is connected with the S electrode of the chip and the S electrode connecting surface of the carrier to provide an S electrode electric path;
the lead D-electrode solder paste is connected with the chip and the D-electrode connecting surface of the carrier;
the chip D electrode solder paste is connected with the D electrode of the chip and the Clip chip connecting part, and the D electrode is electrically transmitted to the Clip copper sheet to provide a D electrode electrical path;
and the G electrode solder paste is connected with the G electrode of the chip and the G electrode connecting surface of the carrier to provide a G electrode electric path.
Further, the Clip chip connecting portion is connected with the Clip radiating copper sheet through a transition fillet, clip slots are respectively formed in two sides of the Clip radiating copper sheet, the Clip radiating copper sheet is packaged in a plastic package body in the packaging process, the Clip radiating copper sheet leaks out of the upper surface through grinding to form a Clip radiating surface, and the side face of the Clip radiating copper sheet leaks out of the plastic package body through cutting.
Further, a downward frame carrier step is arranged on the periphery of the back surface of the frame carrier, and the back surface of the frame carrier step forms the carrier S-pole connecting surface;
the periphery of the pin connecting part is provided with a downward pin connecting part step, and the back of the pin connecting part step forms the carrier D pole connecting surface;
the G pole lead of the frame is provided with a downward G pole lead step at the periphery, and the back of the G pole lead step forms the G pole connection surface of the carrier.
Further, the Clip chip connecting part is provided with a Clip chip connecting surface, and the Clip chip connecting surface is provided with a Clip chip connecting surface fillet.
Further, one end of the Clip chip connecting part is provided with a Clip lead connecting part, and the Clip lead connecting part is provided with a Clip chip connecting surface fillet.
Further, a Clip step is arranged between the Clip chip connecting part and the Clip lead connecting part, and a groove is formed at the Clip step.
Further, the number of the frame S-pole leads is 3, and the 3 frame S-pole leads are distributed at equal intervals;
the number of the D-electrode leads of the frame is 4, and the 4D-electrode leads of the frame are distributed at equal intervals.
Further, the Clip cooling surface is 0.1mm away from the product profile.
Meanwhile, the invention also provides a preparation method of the double-sided radiating packaging structure, which is used for preparing the double-sided radiating packaging structure and comprises the following steps:
obtaining a lead frame through an etching process;
thinning and scribing are carried out on the wafer, the diced wafer is subjected to inverted mounting and core loading on the MOS tube, copper plating is carried out on the D region of the chip, and a Clip heat dissipation copper sheet is attached after the chip is loaded;
vacuum reflow soldering is carried out after the Clip radiating copper sheet is pasted, and then the residues of solder paste volatile are cleaned;
sticking a film on the back of the frame carrier, cleaning before plastic packaging, plastic packaging the product, and performing post-curing after plastic packaging;
after post-curing, carrying out hot boiling softening, removing flash, electroplating after softening, baking after electroplating, grinding a product after baking is finished, and leaking a Clip radiating copper sheet;
and (3) printing after the Clip radiating copper sheets are leaked out, cutting and separating, carrying out product testing after cutting into single products, and packaging and warehousing after the products are qualified.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the lead frame carrier is directly led out as the S pole and the G pole, and the D pole is led out through the Clip radiating copper sheet, so that the length of an electric transmission path is greatly reduced, the conductive sectional area is increased, the internal resistance of a product is greatly reduced, and the electric performance of a power device product is improved; the structure is characterized in that the S pole and the G pole of the chip are bonded through the specific carrier, and the size of the carrier can be adjusted according to the windowing sizes of the S pole and the G pole of the chip, so that different MOS chip sizes can be adapted;
2. according to the invention, the frame carrier step is downwards arranged around the outer contour of the back surface of the frame carrier, the back surface of the step is a carrier S-pole connecting surface, the step can be adjusted according to the size of the S-pole opening of the chip, the frame carrier step can increase the binding force of the carrier and the plastic package material, and the packaging strength is improved;
3. according to the invention, through the structure of the solder paste adhesive sheet and the copper sheet, the electrical propagation path distance and the propagation sectional area are optimized, and the internal resistance of a power device product is reduced;
4. according to the invention, the D pole of the chip is arranged on the upper surface of the product, and the copper sheet bonding structure is matched, so that the product can realize double-sided heat dissipation, meanwhile, the heat dissipation area with the same size as the upper surface of the product is obtained, the heat dissipation is greatly improved, and the product reliability of the power device is improved.
5. According to the invention, the D pole of the chip is arranged on the upper surface of the power device, and the copper sheet sticking structure is matched, so that the power device product has smaller packaging volume and higher product voltage and power;
6. according to the preparation method of the double-sided radiating packaging structure, the performance and the production yield of the product are improved;
7. according to the preparation method of the double-sided heat dissipation packaging structure, provided by the invention, the anomalies such as cavities, dirt, layering and the like of the product are greatly improved through vacuum reflow soldering and solder paste cleaning. The product structure design is combined through the FC upper core and solder paste process, so that the reliability and the electrical performance of the product are greatly improved. Through grinding and cutting processes, the upper surface of the product can be the whole radiating surface, rth of the product is greatly reduced, and a better radiating effect is provided.
Drawings
Fig. 1 is a schematic diagram of an internal structure of a package structure with dual-sided heat dissipation in an embodiment of the invention;
fig. 2 is a schematic view of a leadframe structure of a package structure with dual-sided heat dissipation in an embodiment of the invention;
FIG. 3 is a side view of an internal structure of a dual-sided heat dissipating package in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of a Clip heat dissipating copper sheet according to an embodiment of the present invention;
FIG. 5 is a back side profile view of a dual sided heat dissipating package structure according to an embodiment of the present invention;
fig. 6 is a front outline view of a package with dual-sided heat dissipation in an embodiment of the invention.
The reference numerals are as follows:
1-frame carrier backside; 2-connecting the frame with ribs; 3-frame D pole leads; a 4-pin connection; 5-pin connection steps; 6-frame S pole lead wires; 7-frame carrier steps; 8-chip S electrode solder paste; 9-frame G pole leads; 10-G pole lead steps; 11-G electrode tin paste; 12-chip; 13-chip D electrode solder paste; 14-lead D electrode solder paste; 15-Clip chip connection surface; 16-Clip lead connection face; 17-Clip steps; 18-Clip lead connections; a 19-Clip chip connection part; 20-Clip radiating copper sheets; 21-Clip chip connection face fillets; 22-transition fillets; 23-Clip radiating surfaces; 24-plastic packaging body; 25-carrier S pole connection surface; 26-carrier D pole junction; 27-carrier G-pole junction; 28-Clip slot.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the embodiments described below are some, but not all, of the embodiments of the present application. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Accordingly, the following detailed description of the embodiments of the present application, taken in conjunction with the accompanying drawings, is intended to represent only selected embodiments of the present application, and not to limit the scope of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the embodiments of the present invention can be understood by those of ordinary skill in the art according to specific circumstances.
Referring to fig. 1-6, the present invention provides a dual-sided heat dissipation package structure, which includes a leadframe, a chip 12, a Clip heat dissipation copper sheet 20, and a molding compound 24.
The lead frame comprises a frame carrier back 1, a frame D electrode lead 3 and a frame G electrode lead 9, wherein frame connecting ribs 2 are respectively arranged on two sides of the frame carrier back 1, one end of the frame carrier back 1 is connected with one or more frame S electrode leads 6, the frame carrier back 1, the frame connecting ribs 2 and the frame S electrode leads 6 are arranged in a coplanar mode and leak out of a plastic package body 24 after packaging, an S electrode of the packaging structure is formed after the frame S electrode leads 6 are subjected to plastic package, and the frame carrier back 1 is provided with a carrier S electrode connecting surface 25.
In this embodiment, the back surface 1 of the lead frame carrier is used as the back surface of the product, the back surface of the product is welded on the PCB circuit board by soldering tin, and the three electrodes of the MOS transistor are led out through the back surface 1 of the frame carrier, the D-electrode lead 3 of the frame, and the G-electrode lead 9 of the frame.
The frame D utmost point lead wire 3 sets up in frame carrier back 1 and keeps away from frame S utmost point lead wire 6 one side, and the quantity of frame D utmost point lead wire 3 is one or more, and all frame D utmost point lead wires 3 all set up on same pin connecting portion 4, and frame D utmost point lead wire 3, pin connecting portion 4 and frame carrier back 1 set up in the coplanar, and spill plastic envelope body 24 after frame D utmost point lead wire 3 and pin connecting portion 4 plastic envelope forms this packaging structure' S D utmost point electrode, and frame D utmost point lead wire 3 is provided with carrier D utmost point junction surface 26 with the back of pin connecting portion 4.
The frame G electrode lead 9 is arranged on the same side of the frame carrier back 1 and the frame S electrode lead 6, the frame G electrode lead 9 and the frame carrier back 1 are arranged in a coplanar mode, the frame G electrode lead 9 leaks out of the plastic package body 24 to form an S electrode after being subjected to plastic package, and the carrier G electrode connection surface 27 is arranged on the back of the frame G electrode lead 9.
One surface of the chip 12 is connected with the carrier S pole connecting surface 25 and the carrier G pole connecting surface 27 respectively, the other surface is connected with the Clip chip connecting part 19, and the Clip chip connecting part 19 is connected with the carrier D pole connecting surface 26; the size of the chip 12 is larger than the size of the frame carrier backside 1.
The Clip chip connecting portion 19 is provided with a Clip heat dissipation copper sheet 20, and the upper surface and the side surface of the Clip heat dissipation copper sheet 20 leak out of the plastic package 24 to form a Clip heat dissipation surface 23, as shown in fig. 6.
The Clip chip connecting part 19 and the chip 12 are both molded in the molding body 24. After the packaging structure is packaged, the surface of the back surface 1 of the frame carrier, which leaks out of the plastic package body 24, is defined as the back surface of the product, and the specific appearance structure is shown in fig. 5; the surface of the Clip heat dissipation copper sheet 20 leaking from the plastic package 24 is defined as the front surface of the product, and the product is packaged in the plastic package 24 except that the back surface 1 of the frame carrier, the frame connecting bar 2, the frame D-electrode lead 3, the pin connecting portion 4, the frame S-electrode lead 6 and the frame G-electrode lead 9 leak from the back surface, and the Clip heat dissipation copper sheet 20 leaks from the front surface.
Optionally, solder paste is further included, and the solder paste includes chip S-electrode solder paste 8, lead D-electrode solder paste 14, chip D-electrode solder paste 13, and G-electrode solder paste 11. The chip S-electrode solder paste 8 connects the S-electrode of the chip 12 and the carrier S-electrode connection surface 25, providing an S-electrode electrical path. Lead D-electrode solder paste 14 connects die 12 and carrier D-electrode connection face 26. The chip D-electrode solder paste 13 connects the D-electrode of the chip 12 and the Clip chip connecting portion 19, and transfers the D-electrode to the Clip heat dissipation copper sheet 20 to provide a D-electrode electrical path. The G electrode solder paste 11 connects the G electrode of the chip 12 and the G electrode connection surface 27 of the carrier, providing a G electrode electrical path.
Unlike traditional power device package, the traditional package is that the lead frame carrier is used as the D electrode leading-out end of the chip, the S electrode and the G electrode are led out through the bonding mode of the bonding wires, the lead frame carrier is directly led out through the solder paste bonding sheet as the S electrode and the G electrode, and the D electrode is led out through the Clip radiating copper sheet 20.
As shown in fig. 3 and 4, the Clip chip connection portion 19 is connected with the Clip heat dissipation copper sheet 20 through a transition fillet 22, clip slots 28 are respectively provided on two sides of the Clip heat dissipation copper sheet 20, the Clip heat dissipation copper sheet 20 is packaged in the plastic package body 24 during the packaging process, the Clip heat dissipation copper sheet 20 leaks out of the upper surface through grinding to form a Clip heat dissipation surface 23, and the side surface of the Clip heat dissipation copper sheet 20 leaks out of the plastic package body 24 through cutting.
As shown in fig. 1, the frame carrier back 1 is provided with a frame carrier step 7 downward on the peripheral side, and the frame carrier step 7 back forms a carrier S-pole connection surface 25.
In this embodiment, a frame carrier step 7 is disposed downward around the outer contour of the frame carrier back 1, and the step back is a carrier S-pole connection surface 25, which can be adjusted according to the size of the S-pole window of the chip 12. The frame carrier step 7 can increase the binding force between the carrier and the plastic packaging material and improve the packaging strength.
The periphery of the pin connection part 4 is provided with a downward pin connection part step 5, and the back surface of the pin connection part step 5 forms a carrier D-pole connection surface 26.
In this embodiment, a pin connection part step 5 is downward disposed around the outline of the pin connection part 4, and the pin connection part step 5 can increase the binding force between the pin connection part 4 and the molding compound, thereby improving the packaging strength.
The frame G-pole lead 9 is provided with a downward G-pole lead step 10 on the peripheral side, and the back surface of the G-pole lead step 10 forms a carrier G-pole connection surface 27.
In this embodiment, a downward G-pole lead step 10 is disposed around the outer contour of the frame G-pole lead 9, and the back of the step is a carrier G-pole connection surface 27, where the G-pole lead step 10 can increase the binding force between the frame G-pole lead 9 and the molding compound, and improve the packaging strength.
As shown in fig. 3, clip chip connection portion 19 is provided with Clip chip connection surface 15, and Clip chip connection surface 15 is provided with Clip chip connection surface fillet 21.
In this embodiment, the chip 12 is prevented from being scratched during the bonding process by providing the Clip chip connection surface 15 on the Clip chip connection portion 19 and providing the Clip chip connection surface fillet 21 on the Clip chip connection surface 15.
Optionally, a Clip wire connecting portion 18 is disposed at one end of the Clip chip connecting portion 19, and a Clip chip connecting surface fillet 21 is disposed on the Clip wire connecting portion 18.
In this embodiment, a boss-shaped Clip lead connecting portion 18 is disposed at one end of the Clip chip connecting portion 19, the top of the boss is a Clip lead connecting surface 16, and a Clip chip connecting surface fillet 21 is disposed on the Clip lead connecting surface 16 to avoid scratching the chip 12 during bonding.
Optionally, a Clip step 17 is disposed between the Clip chip connecting portion 19 and the Clip lead connecting portion 18, and a groove is formed at the position of the Clip step 17.
In this embodiment, a Clip step 17 is disposed between the Clip chip connecting portion 19 and the Clip lead connecting portion 18, and a groove is formed at the step position, and this groove can be used for giving way to the chip 12, so as to ensure filling of the molding compound.
Optionally, the number of the frame S-pole leads 6 is 3, and the 3 frame S-pole leads 6 are distributed at equal intervals.
The number of the frame D-pole leads 3 is 4, and the 4 frame D-pole leads 3 are distributed at equal intervals.
Alternatively, clip cooling surface 23 is at a minimum of 0.1mm from the product profile.
The invention bonds the S electrode and G electrode window area of the chip on the lead frame carrier through the solder paste, can achieve that the size of the chip 12 is larger than the carrier size, only needs to design the safe encapsulation size from the edge of the chip 12 to the plastic package body 24, and the minimum is 0.1mm, so that the MOS tube under the same encapsulation outline size can encapsulate the chip with larger size, thereby obtaining larger product voltage and power, providing larger selection range of the size of the chip 12, and achieving smaller encapsulation size of the power device product under the same product performance in the opposite direction.
The circuit connection relation of the double-sided radiating packaging structure provided by the invention is as follows:
s pole passageway: the method comprises the steps of windowing a chip S electrode, soldering tin paste 8 of the chip S electrode, a carrier S electrode connecting surface 25, a frame carrier back surface 1, a frame S electrode lead 6 and welding to a PCB circuit board.
D pole passage: the method comprises the steps of windowing a chip D electrode, a chip D electrode solder paste 13, a Clip chip connecting surface 15, a Clip chip connecting part 19, a Clip radiating copper sheet 20, a Clip lead connecting part 18, a Clip lead connecting surface 16, a lead D electrode solder paste 14, a carrier D electrode connecting surface 26, a lead connecting part 4 and a frame D electrode lead 3 and welding the chip D electrode solder paste to a PCB.
G pole passage: the G electrode of the chip is windowed, G electrode solder paste 11, carrier G electrode connection surface 27, frame G electrode lead 9 and welded to the PCB circuit board.
The invention provides a preparation method of a double-sided radiating packaging structure, which is used for preparing the double-sided radiating packaging structure, and the preparation method comprises the following packaging flow: the manufacturing method comprises the following steps of wafer thinning, wafer scribing, lead frame feeding, solder paste printing, FC core loading, solder paste printing, clip mounting, vacuum reflow soldering, solder paste cleaning, frame film pasting, cleaning before plastic packaging, post curing, hot boiling softening, flash removal, electroplating, baking, grinding, printing, cutting and separating, testing, external inspection packaging and warehousing, and specifically comprises the following steps of:
obtaining a lead frame through an etching process;
thinning and scribing are carried out on the wafer, the diced wafer is subjected to inverted mounting and core loading on the MOS tube, copper plating is carried out on the D region of the chip, and the Clip heat dissipation copper sheet 20 is attached after the chip is loaded;
vacuum reflow soldering is carried out after the Clip radiating copper sheet 20 is attached, and then the residues of solder paste volatile are cleaned;
sticking a film on the back surface 1 of the frame carrier, cleaning, performing plastic packaging on the product, and performing post-curing after plastic packaging;
after post-curing, carrying out hot boiling softening, removing flash, electroplating after softening, baking after electroplating, grinding a product after baking is finished, and leaking out the Clip radiating copper sheet 20;
and (3) printing after the Clip radiating copper sheets 20 are leaked out, cutting and separating, carrying out product testing after cutting into single products, and packaging and warehousing after the products are qualified.
According to the preparation method of the double-sided heat dissipation packaging structure, provided by the invention, abnormal conditions such as cavities, dirt, layering and the like of a product are greatly improved through vacuum reflow soldering and solder paste cleaning. The product structure design is combined through the FC upper core and solder paste process, so that the reliability and the electrical performance of the product are greatly improved. Through grinding and cutting processes, the upper surface of the product can be the whole radiating surface, rth of the product is greatly reduced, and a better radiating effect is provided.
The foregoing is merely a preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions within the technical scope of the present disclosure should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. The utility model provides a two-sided radiating packaging structure which characterized in that includes:
the chip comprises a lead frame, a chip, a Clip radiating copper sheet and a plastic package body;
the lead frame comprises a frame carrier back, frame D electrode leads and frame G electrode leads, frame connecting ribs are respectively arranged on two sides of the frame carrier back, one end of the frame carrier back is connected with one or more frame S electrode leads, the frame carrier back, the frame connecting ribs and the frame S electrode leads are arranged in a coplanar mode and leak out of a plastic package body after packaging, an S electrode is formed after the frame S electrode leads are subjected to plastic package, and a carrier S electrode connecting surface is arranged on the frame carrier back;
the frame D electrode lead is arranged on one side, far away from the frame S electrode lead, of the back surface of the frame carrier, the number of the frame D electrode lead is one or more, all the frame D electrode leads are arranged on the same pin connecting part, the frame D electrode lead, the pin connecting part and the back surface of the frame carrier are arranged in the same plane, and after the frame D electrode lead and the pin connecting part are subjected to plastic package, a plastic package body is leaked out to form a D electrode, and a carrier D electrode connecting surface is arranged on the back surface of the frame D electrode lead and the pin connecting part;
the frame G electrode lead is arranged on the same side of the frame carrier back and the frame S electrode lead, the frame G electrode lead and the frame carrier back are arranged in a coplanar manner, the frame G electrode lead leaks out of the plastic package after being subjected to plastic package to form an S electrode, and the frame G electrode lead back is provided with a carrier G electrode connecting surface;
one surface of the chip is respectively connected with the carrier S pole connecting surface and the carrier G pole connecting surface, the other surface of the chip is connected with a Clip chip connecting part, and the Clip chip connecting part is connected with the carrier D pole connecting surface; the size of the chip is larger than the size of the back surface of the frame carrier;
the Clip chip connecting part is provided with a Clip radiating copper sheet, and the upper surface and the side surface of the Clip radiating copper sheet leak out of the plastic package to form a Clip radiating surface;
and the Clip chip connecting part and the chip are both encapsulated in the plastic package body.
2. The double-sided heat dissipating package of claim 1, wherein:
the solder paste comprises a chip S-electrode solder paste, a lead D-electrode solder paste, a chip D-electrode solder paste and a G-electrode solder paste;
the chip S electrode solder paste is connected with the S electrode of the chip and the S electrode connecting surface of the carrier to provide an S electrode electric path;
the lead D-electrode solder paste is connected with the chip and the D-electrode connecting surface of the carrier;
the chip D electrode solder paste is connected with the D electrode of the chip and the Clip chip connecting part, and the D electrode is electrically transmitted to the Clip copper sheet to provide a D electrode electrical path;
and the G electrode solder paste is connected with the G electrode of the chip and the G electrode connecting surface of the carrier to provide a G electrode electric path.
3. The double-sided heat-dissipating package structure of claim 1 or 2, wherein:
the Clip chip connecting portion is connected with the Clip radiating copper sheet through a transition fillet, clip slots are respectively formed in two sides of the Clip radiating copper sheet, the Clip radiating copper sheet is packaged in the plastic package body in the packaging process, the Clip radiating copper sheet leaks out of the upper surface through grinding to form a Clip radiating surface, and the side face of the Clip radiating copper sheet leaks out of the plastic package body through cutting.
4. The double-sided heat dissipating package of claim 1, wherein:
the periphery of the back of the frame carrier is provided with a downward frame carrier step, and the back of the frame carrier step forms the carrier S pole connecting surface;
the periphery of the pin connecting part is provided with a downward pin connecting part step, and the back of the pin connecting part step forms the carrier D pole connecting surface;
the G pole lead of the frame is provided with a downward G pole lead step at the periphery, and the back of the G pole lead step forms the G pole connection surface of the carrier.
5. The double-sided heat dissipating package of claim 1, wherein:
the Clip chip connecting part is provided with a Clip chip connecting surface, and the Clip chip connecting surface is provided with a Clip chip connecting surface fillet.
6. The double-sided heat dissipating package of claim 5, wherein:
one end of the Clip chip connecting part is provided with a Clip lead connecting part, and the Clip lead connecting part is provided with a Clip chip connecting surface fillet.
7. The double-sided heat-dissipating packaging structure of claim 6, wherein:
and a Clip step is arranged between the Clip chip connecting part and the Clip lead connecting part, and a groove is formed at the position of the Clip step.
8. The double-sided heat dissipating packaging structure of any of claims 4-7, wherein:
the number of the S-electrode leads of the frame is 3, and the 3S-electrode leads of the frame are distributed at equal intervals;
the number of the D-electrode leads of the frame is 4, and the 4D-electrode leads of the frame are distributed at equal intervals.
9. The double-sided heat dissipating package of claim 8, wherein:
the distance between the Clip radiating surface and the product contour is 0.1mm.
10. A method for preparing a double-sided heat-dissipating packaging structure according to any one of claims 1 to 9, comprising the steps of:
obtaining a lead frame through an etching process;
thinning and scribing are carried out on the wafer, the diced wafer is subjected to inverted mounting and core loading on the MOS tube, copper plating is carried out on the D region of the chip, and a Clip heat dissipation copper sheet is attached after the chip is loaded;
vacuum reflow soldering is carried out after the Clip radiating copper sheet is pasted, and then the residues of solder paste volatile are cleaned;
sticking a film on the back of the frame carrier, cleaning before plastic packaging, plastic packaging the product, and performing post-curing after plastic packaging;
after post-curing, carrying out hot boiling softening, removing flash, electroplating after softening, baking after electroplating, grinding a product after baking is finished, and leaking a Clip radiating copper sheet;
and (3) printing after the Clip radiating copper sheets are leaked out, cutting and separating, carrying out product testing after cutting into single products, and packaging and warehousing after the products are qualified.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311824791.5A CN117476590A (en) | 2023-12-28 | 2023-12-28 | Double-sided heat dissipation packaging structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311824791.5A CN117476590A (en) | 2023-12-28 | 2023-12-28 | Double-sided heat dissipation packaging structure and preparation method thereof |
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| US20080122070A1 (en) * | 2006-11-24 | 2008-05-29 | Siliconware Precision Industries Co., Ltd. | Heat dissipating semiconductor package and fabrication method therefor |
| CN103779311A (en) * | 2012-10-17 | 2014-05-07 | 瑞萨电子株式会社 | Semiconductor device and method of manufacturing the same |
| CN114156253A (en) * | 2021-12-09 | 2022-03-08 | 华羿微电子股份有限公司 | Clip copper sheet and strip |
| CN116259549A (en) * | 2022-12-30 | 2023-06-13 | 深圳真茂佳半导体有限公司 | Packaging method and packaging structure of double-sided heat dissipation power semiconductor |
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|---|---|---|---|---|
| JPH10112519A (en) * | 1996-10-08 | 1998-04-28 | Nippon Motorola Ltd | Integrated circuit device with heat dissipation means and its manufacture |
| US20040063240A1 (en) * | 2002-09-30 | 2004-04-01 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
| TW200636954A (en) * | 2005-04-15 | 2006-10-16 | Siliconware Precision Industries Co Ltd | Thermally enhanced semiconductor package and fabrication method thereof |
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| CN114156253A (en) * | 2021-12-09 | 2022-03-08 | 华羿微电子股份有限公司 | Clip copper sheet and strip |
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