CN117459040B - Circuit structure and method for shutdown failure protection and quick closing based on active control - Google Patents
Circuit structure and method for shutdown failure protection and quick closing based on active control Download PDFInfo
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Abstract
The invention belongs to the MOSFET driving control technology, and particularly relates to a circuit structure and a method for off failure protection and quick closing based on active control. The circuit structure comprises a main control processor circuit, a turn-off failure protection and quick turn-off circuit, a driving state acquisition circuit, a MOSFET parameter acquisition circuit and a MOSFET driving circuit, and realizes the turn-off control failure protection of the MOSFET and the quick turn-off under specific conditions.
Description
Technical Field
The invention belongs to the MOSFET driving control technology, and particularly relates to a circuit structure and a method for off failure protection and quick closing based on active control.
Background
The MOSFET is a semiconductor device, and is widely applied to various electronic design fields such as power amplification, equipment driving, communication, circuit switching and the like due to the advantages of high-speed switching, low-voltage control, low power consumption, no arc on-off and the like. In the field of power distribution, MOSFETs are often used as power switches to control the on-off of the power of a distribution channel. At present, as the requirements of security and reliability of control logic of power MOSFETs are higher and higher in power distribution environments such as civil aircraft, the conventional MOSFET control technology cannot meet the requirements of turn-off speed and reliability.
Disclosure of Invention
The invention aims to: the circuit structure and the method for the turn-off failure protection and the quick turn-off based on the active control are provided to realize the turn-off failure protection and the quick turn-off control of the MOSFET.
The technical scheme is as follows:
the utility model provides a circuit structure based on shutdown failure protection and quick closing of active control, includes main control processor circuit, shutdown failure protection and quick closing circuit, driving state acquisition circuit, MOSFET parameter acquisition circuit, MOSFET drive circuit, wherein:
one output end of the main control processor circuit is connected with the input end of the MOSFET driving circuit, the other output end of the main control processor circuit is connected with the input end of the turn-off failure protection and quick-closing circuit, one input end of the main control processor circuit is connected with the output end of the driving state acquisition circuit, and the other input end of the main control processor circuit is connected with the output end of the MOSFET parameter acquisition circuit; the output end of the turn-off failure protection and fast closing circuit is connected with one output end of the MOSFET driving circuit at the same time and the input end of the MOSFET circuit, and the other output end of the turn-off failure protection and fast closing circuit is connected with the input end of the driving state acquisition circuit; the other input end of the driving state acquisition circuit is connected with the other output end of the MOSFET driving circuit; the input end of the MOSFET parameter acquisition circuit is connected with the output end of the MOSFET circuit.
Further, the turn-off fail safe and fast circuit comprises a resistor R1, a capacitor C1 and a transistor V1, and the driving state acquisition circuit comprises resistors R2 and R3, wherein:
one end of a resistor R1 is connected with the output end of the MOSFET driving circuit, one end of a capacitor C1 is connected with one end of the resistor R1, the other end of the capacitor C1 is connected with the drain electrode of a transistor V1, the grid electrode of the transistor V1 is connected with the auxiliary control I/O of the main control processor circuit, the source electrode of the transistor V1 and the source electrode of a controlled MOSFET V2 in the MOSFET circuit are simultaneously connected with one end of a resistor R3, the other end of the resistor R1 is connected with one end of a resistor R2, the source electrode of the transistor V1 is connected with one end of the resistor R3, and the other end of the resistor R2 is simultaneously connected with the driving state acquisition I/O of the main control processor circuit and the other end of the resistor R3.
Further, the transistor V1 is a MOSFET transistor.
A MOSFET turn-off fail-safe and quick turn-off control method, the control method being performed by means of the above-described active control-based turn-off fail-safe and quick turn-off circuit structure, the method comprising: the MOSFET turn-off failure protection and the MOSFET turn-off quickly, the MOSFET turn-off failure protection specifically comprises:
the main control processor circuit receives the driving state signal sent by the driving state acquisition circuit, judges whether MOSFET turn-off failure occurs according to the driving state signal, and if the MOSFET turn-off failure occurs, the main control processor circuit sends a turn-off failure protection control signal to the turn-off failure protection and fast circuit, and the turn-off failure protection and fast circuit sends a turn-off instruction to the controlled MOSFET in the MOSFET circuit to turn off the MOSFET, wherein the driving state signal is used for representing the driving signal state output by the MOSFET driving circuit.
Further, the driving state acquisition circuit acquires the driving state of the controlled MOSFET V2 through a voltage dividing resistor network.
Further, the MOSFET quick turn-off method specifically includes:
the main control processor circuit receives the MOSFET state signal sent by the MOSFET parameter acquisition circuit, judges whether the MOSFET needs to be turned off rapidly according to the MOSFET state signal, and sends an MOSFET rapid turn-off control signal to the turn-off failure protection and rapid closing circuit if the MOSFET needs to be turned off rapidly, and the turn-off failure protection and rapid closing circuit sends a rapid turn-off instruction to the controlled MOSFET in the MOSFET circuit, so that the MOSFET is turned off rapidly, and the current flowing through the MOSFET in the MOSFET circuit is used as the MOSFET state signal to represent the state flowing through the MOSFET.
The beneficial effects are that:
the MOSFET turn-off failure protection and quick turn-off control method based on active control is applied to the field of MOSFET control, and achieves MOSFET turn-off control failure protection and quick turn-off under specific conditions by adopting an MOSFET control circuit formed by discrete components such as resistors, capacitors, transistors and the like and an MOSFET control method based on driving signal acquisition and MOSFET parameter acquisition, and has the advantages of low cost, high control reliability and quick control.
Drawings
FIG. 1 is a functional block diagram of a circuit architecture for active control based MOSFET turn-off fail-safe and fast turn-off;
fig. 2 is a hardware schematic of a circuit configuration for active control based MOSFET off failure protection and fast turn-off.
Detailed Description
At present, as the requirements of security and reliability of control logic of power MOSFETs are higher and higher in power distribution environments such as civil aircraft, the conventional MOSFET control technology cannot meet the requirements of turn-off speed and reliability. The new design is needed to be developed, so that the MOSFETs can be turned off more quickly to cut off load distribution when needed, and the safety requirement is met; and the design of certain reliability is also considered when the conventional control fails, so that the condition of losing the control right of the MOSFET is avoided, and the reliability of the MOSFET driving control is improved.
At present, the rapid turn-off of the power distribution channel MOSFET is usually realized by adopting a mode of arranging a capacitor at the grid electrode thereof, belongs to passive rapid turn-off, cannot control the rapid turn-off time, cannot monitor the state of a rapid turn-off driving signal, and has poor rapid turn-off controllability; for MOSFET turn-off failure, there is no effective countermeasure. The active control-based MOSFET turn-off failure protection and quick turn-off circuit structure can realize real-time monitoring and turn-off time configuration of the quick turn-off state of the MOSFET based on design requirements, and improves the controllability and accuracy of the quick turn-off control of the MOSFET; in addition, the method can effectively cope with the failure scene of the MOSFET turn-off control failure, and improves the reliability of MOSFET drive control.
Examples:
as shown in fig. 1-2, the circuit structure of the shutdown failure protection and the quick shutdown based on the active control comprises a main control processor circuit, a shutdown failure protection and quick shutdown circuit, a driving state acquisition circuit and a MOSFET parameter acquisition circuit. One output end of the main control processor circuit is connected with the input end of the MOSFET driving circuit, the other output end of the main control processor circuit is connected with the input end of the turn-off failure protection and quick-closing circuit, one input end of the main control processor circuit is connected with the output end of the driving state acquisition circuit, and the other input end of the main control processor circuit is connected with the output end of the MOSFET parameter acquisition circuit; the output end of the turn-off failure protection and fast closing circuit is connected with the output end of the MOSFET driving circuit and the input end of the MOSFET circuit at the same time, and an auxiliary driving signal is provided for the controlled MOSFET to realize turn-off failure protection and fast turn-off control, and the other output end of the turn-off failure protection and fast closing circuit is connected with the input end of the driving state acquisition circuit; the other input end of the driving state acquisition circuit is connected with the other output end of the MOSFET driving circuit, and feeds back driving state signals to the main control processor circuit in real time to realize a shutdown failure monitoring function, so that the main control processor circuit is helped to realize a shutdown failure protection control decision; the input end of the MOSFET parameter acquisition circuit is connected with the output end of the MOSFET circuit, and MOSFET state signals are fed back to the main control processor circuit in real time to complete the MOSFET state monitoring function, so that the main control processor circuit is helped to realize quick turn-off decision.
The circuit structure based on the active control shutdown failure protection and the quick closing has a logic operation function, can realize the real-time acquisition and analysis of the driving state signals and the MOSFET state signals, and sends a shutdown control signal to the controlled MOSFET according to the analysis result, thereby realizing the logic output function of the controlled MOSFET driving signals.
The MOSFET state signal indicates that when the current passing through the controlled MOSFET is overlarge, the controlled MOSFET is controlled to be turned off rapidly through the turn-off failure protection and the fast circuit, so that the power electricity is disconnected, and the protection of the MOSFET circuit, the rear-stage feed line and the load is realized.
The drive state signal indicates that the MOSFET drive circuit has sent a drive turn-off signal, and the MOSFET state signal indicates that the controlled MOSFET still has output voltage, and the turn-off failure protection function of the controlled MOSFET is realized by turning off failure protection and controlling the controlled MOSFET to turn off by the fast circuit.
The turn-off failure protection and fast circuit comprises a filtering and delay capacitor, 1 current-limiting and delay resistor and a MOSFET, wherein the resistor and the MOSFET are connected in series to form a fast release loop of the controlled MOSFET grid voltage, and the sum of the resistance value of the resistor and the on resistance of the MOSFET is far smaller than the output resistance of the MOSFET driving circuit. When the rapid turn-off control signal arrives, the MOSFET is turned on, so that the controlled MOSFET is rapidly turned off.
The driving state acquisition circuit comprises two resistors which are connected in series and then connected in series with the resistor of the turn-off failure protection and quick-closing circuit, and the driving state acquisition circuit is connected in parallel with the MOSFET of the turn-off failure protection and quick-closing circuit, and realizes driving state signal acquisition in a resistor voltage division mode.
The working process of the circuit structure for shutdown failure protection and quick shutdown based on active control is as follows:
step 1: the driving state acquisition circuit generates driving state signals through voltage division of two resistors, the driving state acquisition I/O is sent to the main control processor circuit, and the MOSFET parameter acquisition circuit sends MOSFET state signals to the MOSFET parameter acquisition I/O of the main control processor circuit.
Step 2: the main control processor circuit carries out logic judgment according to the received driving state signal and the MOSFET state signal, and when the MOSFET driving signal exists and the controlled MOSFET has output voltage, the main control processor circuit sends a turn-off failure protection control signal to the turn-off failure protection and fast circuit through the auxiliary control I/O; when the controlled MOSFET has output overcurrent, a quick turn-off control signal is sent to the turn-off failure protection and quick circuit through the auxiliary control I/O, and a normal turn-off control signal is sent to the MOSFET driving circuit through the main control I/O.
Step 3: after the MOSFET of the turn-off failure protection and fast turn-off circuit receives the turn-off failure protection control signal, the MOSFET is turned on, and forms a low-impedance controlled MOSFET gate-to-ground loop with the resistor R1, so that the output voltage of the MOSFET driving circuit is lowered, the controlled MOSFET gate current is discharged to the ground through the R1 and the MOSFET, and turn-off failure protection of the controlled MOSFET is realized.
Step 4: after the MOSFET of the turn-off failure protection and quick turn-off circuit receives a quick turn-off control signal, the MOSFET is turned on, forms a low-impedance controlled MOSFET gate-to-ground loop with a resistor R1, is connected with an output-to-ground loop in the MOSFET driving circuit in parallel, further reduces the ground impedance of the controlled MOSFET gate in the turn-off process, increases the gate bleeder current of the controlled MOSFET in the turn-off process, and enables the controlled MOSFET to be turned off quickly.
The gate voltage of the controlled MOSFET V2 is turned off by the fail safe and fast turn-off circuit, so that a bleeder circuit with lower impedance to the ground than the MOSFET driving circuit is provided, and the purpose of fast turn-off is achieved.
Claims (5)
1. The utility model provides a circuit structure based on shutdown failure protection and quick closing of active control which characterized in that includes main control processor circuit, shutdown failure protection and quick closing circuit, driving state acquisition circuit, MOSFET parameter acquisition circuit, MOSFET drive circuit, wherein:
one output end of the main control processor circuit is connected with the input end of the MOSFET driving circuit, the other output end of the main control processor circuit is connected with the input end of the turn-off failure protection and quick-closing circuit, one input end of the main control processor circuit is connected with the output end of the driving state acquisition circuit, and the other input end of the main control processor circuit is connected with the output end of the MOSFET parameter acquisition circuit; one output end of the turn-off failure protection and fast closing circuit is connected with the output end of the MOSFET driving circuit at the same time and the input end of the MOSFET circuit, and the other output end of the turn-off failure protection and fast closing circuit is connected with the input end of the driving state acquisition circuit; the other input end of the driving state acquisition circuit is connected with the other output end of the MOSFET driving circuit; the input end of the MOSFET parameter acquisition circuit is connected with the output end of the MOSFET circuit,
the turn-off failure protection and fast circuit comprises a resistor R1, a capacitor C1 and a transistor V1, and the driving state acquisition circuit comprises resistors R2 and R3, wherein: one end of a resistor R1 is connected with the output end of the MOSFET driving circuit, one end of a capacitor C1 is connected with one end of the resistor R1, the other end of the capacitor C1 is connected with the drain electrode of a transistor V1, the grid electrode of the transistor V1 is connected with the auxiliary control I/O of the main control processor circuit, the source electrode of the transistor V1 and the source electrode of a controlled MOSFET V2 in the MOSFET circuit are simultaneously connected with one end of a resistor R3, the other end of the resistor R1 is connected with one end of a resistor R2, the source electrode of the transistor V1 is connected with one end of the resistor R3, and the other end of the resistor R2 is simultaneously connected with the driving state acquisition I/O of the main control processor circuit and the other end of the resistor R3.
2. The circuit structure of claim 1, wherein the transistor V1 is a MOSFET.
3. A MOSFET turn-off failsafe and quick turn-off control method, characterized in that it is performed by means of the active control-based turn-off failsafe and quick turn-off circuit configuration of claim 1 or 2, the method comprising: the MOSFET turn-off failure protection and the MOSFET quick turn-off, wherein the MOSFET turn-off failure protection specifically comprises:
the main control processor circuit receives the driving state signal sent by the driving state acquisition circuit, judges whether MOSFET turn-off failure occurs according to the driving state signal, and if the MOSFET turn-off failure occurs, the main control processor circuit sends a turn-off failure protection control signal to the turn-off failure protection and fast circuit, and the turn-off failure protection and fast circuit sends a turn-off instruction to the controlled MOSFET in the MOSFET circuit to turn off the MOSFET, wherein the driving state signal is used for representing the driving signal state output by the MOSFET driving circuit.
4. A control method according to claim 3, wherein the driving state acquisition circuit acquires the driving state of the controlled MOSFET V2 through a voltage dividing resistor network.
5. The control method according to claim 4, wherein the MOSFET quick turn-off method specifically includes:
the main control processor circuit receives the MOSFET state signal sent by the MOSFET parameter acquisition circuit, judges whether the MOSFET needs to be turned off rapidly according to the MOSFET state signal, and sends an MOSFET rapid turn-off control signal to the turn-off failure protection and rapid closing circuit if the MOSFET needs to be turned off rapidly, and the turn-off failure protection and rapid closing circuit sends a rapid turn-off instruction to the controlled MOSFET in the MOSFET circuit, so that the MOSFET is turned off rapidly, and the current flowing through the MOSFET in the MOSFET circuit is used as the MOSFET state signal to represent the state flowing through the MOSFET.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311767977.1A CN117459040B (en) | 2023-12-21 | 2023-12-21 | Circuit structure and method for shutdown failure protection and quick closing based on active control |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311767977.1A CN117459040B (en) | 2023-12-21 | 2023-12-21 | Circuit structure and method for shutdown failure protection and quick closing based on active control |
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| CN117459040B true CN117459040B (en) | 2024-04-09 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112803373A (en) * | 2020-12-14 | 2021-05-14 | 株洲中车时代半导体有限公司 | Power semiconductor device protection circuit, control method, storage medium, and apparatus |
| CN113691246A (en) * | 2020-05-18 | 2021-11-23 | 宁波奥克斯电气股份有限公司 | Overcurrent protection circuit and overcurrent protection method of power switch tube |
| CN115113014A (en) * | 2022-08-29 | 2022-09-27 | 华北电力大学 | Power device turn-off failure characteristic testing device and testing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7579900B2 (en) * | 2003-08-12 | 2009-08-25 | Nxp B.V. | Operation and circuitry of a power conversion and control circuit |
| US8067859B2 (en) * | 2008-12-11 | 2011-11-29 | Infineon Technologies Ag | Reverse polarity protection for MOSFETs |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113691246A (en) * | 2020-05-18 | 2021-11-23 | 宁波奥克斯电气股份有限公司 | Overcurrent protection circuit and overcurrent protection method of power switch tube |
| CN112803373A (en) * | 2020-12-14 | 2021-05-14 | 株洲中车时代半导体有限公司 | Power semiconductor device protection circuit, control method, storage medium, and apparatus |
| CN115113014A (en) * | 2022-08-29 | 2022-09-27 | 华北电力大学 | Power device turn-off failure characteristic testing device and testing method |
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