CN117457545A - Method for forming identification code of silicon wafer carrier - Google Patents
Method for forming identification code of silicon wafer carrier Download PDFInfo
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- CN117457545A CN117457545A CN202311758113.3A CN202311758113A CN117457545A CN 117457545 A CN117457545 A CN 117457545A CN 202311758113 A CN202311758113 A CN 202311758113A CN 117457545 A CN117457545 A CN 117457545A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 132
- 239000010703 silicon Substances 0.000 title claims abstract description 132
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 9
- 229920001774 Perfluoroether Polymers 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 16
- 229920003023 plastic Polymers 0.000 abstract description 6
- 239000004033 plastic Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 108
- 239000002245 particle Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010329 laser etching Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the field of integrated circuit processing, and provides a method for forming a silicon wafer carrier identification code, wherein the method for forming the silicon wafer carrier identification code comprises the following steps: heating the metal needle; the metal needle forms an identification code pattern on the surface of the silicon wafer carrier body or the surface of the covering piece in a dot matrix mode; performing color development treatment on the formed identification code pattern; the silicon wafer carrier body is connected with the covering piece, and the identification code is arranged between the covering piece and the silicon wafer carrier body. The method for forming the identification code of the silicon wafer carrier is used for solving the defect that the identification code formed by the silicon wafer carrier made of high-temperature-resistant plastic materials in the prior art is unclear.
Description
Technical Field
The invention relates to the technical field of integrated circuit processing, in particular to a method for forming an identification code of a silicon wafer carrier.
Background
The integrated circuit has a plurality of silicon wafer processing procedures, so that the product needs to be traced for better management or improvement of the product quality, manufacturers need to analyze or know the silicon wafer processing procedures, and usually, a plurality of information can be loaded on the identification codes by scanning the identification codes. Currently, the most commonly used identification codes are bar codes, two-dimensional codes. Because the silicon wafer itself has no identification property and is difficult to identify on a clean silicon wafer, manufacturers generally make the identification on the surface of a carrier of the silicon wafer, such as the carrier body of the silicon wafer.
For general purpose products, the identification code may be applied by various methods, such as printing on the package, surface spraying or laser etching on the surface of the product, etc. However, because the silicon wafer carrier body needs to be placed in a highly corrosive chemical reagent, such as hydrofluoric acid, concentrated nitric acid, sodium hydroxide, potassium hydroxide, hydrogen peroxide, etc., or the silicon wafer is at a higher temperature, even up to 180 ℃, common plastics can corrode, melt, dissolve, etc., and are difficult to apply in such environments. That is, the method of forming the identification code, such as printing, spray painting, and the like, is difficult to resist to severe environments such as high temperature, corrosion, dissolution, and the like, both in the pattern and the carrier of the pattern.
In order to meet the harsh environment and use conditions of the processing of silicon wafers, the silicon wafer carrier body is generally made of a corrosion-resistant and high-temperature-resistant plastic material, and as such, the common method is difficult to mark on the silicon wafer carrier body due to corrosion or dissolution and the like. The identification code is formed on the silicon wafer carrier body by laser etching, the pattern formed by laser etching is very shallow and difficult to mechanically scan and identify, if the laser energy is enhanced, melt fracture and explosion can occur because the free energy of the surface of the plastic material is low, the melt fluidity is poor and heat dissipation is difficult, the pattern of small points can be exploded and diffused due to the enhancement of the laser energy, explosion points are formed, the pattern is not clear any more and difficult to identify. In addition, because the silicon wafer industry needs ultra-clean environment, the plastic material after laser etching can generate trace carbon particles, and the carbon particles can cause short circuit of an integrated circuit due to conductive carbon particles, and the trace carbon particles can pollute the processing link of the silicon wafer to cause secondary pollution. These disadvantages are to be avoided during the fabrication of the integrated circuit, which would otherwise reduce the quality of the integrated circuit and affect its lifetime.
For example, in the chinese patent with publication number CN218101200U, ceramic, special film and other materials are used as the substrate, and the substrate is marked with clear bar code or pattern, and then is melt-sealed and protected, but the processing process is complicated, the cost is high, and the requirement for pattern carrier is also high.
Disclosure of Invention
The invention provides a method for forming an identification code of a silicon wafer carrier, which is used for solving the problems that the identification code formed by the silicon wafer carrier made of high-temperature-resistant plastic materials is unclear in the prior art, carbon particles are influenced on the silicon wafer in the forming process, a heated metal is adopted to melt a silicon wafer carrier body or a covering piece to form the identification code in a lattice form, and then the silicon wafer carrier body or the covering piece is sealed by the covering piece, so that the definition of the identification code is improved, and the influence of the carbon particles generated in the processing process on the silicon wafer is reduced.
The invention provides a method for forming an identification code of a silicon wafer carrier, which comprises the following steps:
heating the metal needle;
the metal pins form identification code patterns on the surface of the silicon wafer carrier body or the surface of the covering part in a dot matrix mode;
performing color development treatment on the formed identification code pattern;
and connecting the silicon wafer carrier body with the covering piece, and placing the identification code pattern between the covering piece and the silicon wafer carrier body.
According to the method for forming the silicon wafer carrier identification code, the silicon wafer carrier body and the covering piece are made of tetrafluoroethylene-perfluoro alkoxy vinyl ether copolymer.
According to the method for forming the identification code of the silicon wafer carrier, when the metal needle forms the identification code pattern on the surface of the silicon wafer carrier body, the method comprises the following steps:
forming a groove on the surface of the silicon wafer carrier body;
the metal pins form the identification code pattern in the groove in a dot matrix mode;
performing color development treatment on the formed identification code pattern;
and placing the covering piece in the groove and connecting the covering piece with the silicon wafer carrier body.
According to the method for forming the identification code of the silicon wafer carrier, when the metal needle forms the identification code pattern on the surface of the covering piece, the method comprises the following steps:
forming a groove on the surface of the silicon wafer carrier body;
the metal pins form the identification code pattern on the surface of the covering part in a dot matrix mode;
performing color development treatment on the formed identification code pattern;
and placing the covering piece in the groove and connecting the covering piece with the silicon wafer carrier body, wherein one surface of the covering piece, which is marked with the identification code pattern, is placed in the groove.
According to the method for forming the identification code of the silicon wafer carrier provided by the invention, after the formed identification code pattern is subjected to the color development treatment, the method further comprises the following steps: leveling the concave-convex formed by the identification code pattern.
According to the method for forming the silicon wafer carrier identification code, the connecting of the silicon wafer carrier body and the covering piece comprises welding the silicon wafer carrier body and the covering piece.
According to the method for forming the identification code of the silicon wafer carrier provided by the invention, the formation of the identification code pattern on the surface of the silicon wafer carrier body or the surface of the covering part by the metal needle in a dot matrix mode comprises the following steps: the metal needle forms a pit on the surface of the silicon wafer carrier body or the surface of the covering piece, and the depth of the pit is smaller than the thickness of the silicon wafer carrier body or the covering piece.
According to the method for forming the identification code of the silicon wafer carrier provided by the invention, the color development processing of the formed identification code pattern comprises the following steps: and injecting a color developing substance into the pit formed by the metal needle.
According to the method for forming the identification code of the silicon wafer carrier, the metal needle is a steel needle, the metal needle is of a hollow structure, and the hollow structure is internally used for storing a chromogenic substance.
According to the method for forming the identification code of the silicon wafer carrier, one or more metal pins can be used for forming the identification code pattern at the same time.
According to the method for forming the identification code of the silicon wafer carrier, the identification code pattern is formed on the surface of the silicon wafer carrier body or the surface of the covering piece in a dot matrix mode through the heated metal needle, color development is carried out, and then the silicon wafer carrier body is connected and sealed with the covering piece, so that the protection of the identification code pattern is realized, the identification code forming process is simplified, the formed identification code pattern is clear, the scanning identification is easy, the operation is simple and easy, the cost is low, the fusion sealing effect is good, the color development substance is solidified and isolated in the covering piece, and the pollution of the silicon wafer is avoided.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for forming an identification code of a silicon wafer carrier according to the present invention;
FIG. 2 is a second flow chart of a method for forming an identification code of a silicon wafer carrier according to the present invention;
FIG. 3 is a schematic view of the structure of a silicon wafer carrier body provided by the present invention;
FIG. 4 is a flowchart illustrating a third method for forming an identification code of a silicon wafer carrier according to the present invention.
Reference numerals:
100: a silicon wafer carrier body; 101: a groove; 102: an identification code; 200: a cover.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., are based on directions or positional relationships shown in the drawings, are merely for convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present invention will be understood in detail by those of ordinary skill in the art.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
For the silicon wafer carrier, polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), etc. may be selected as the material. Most typically or most used is tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (PFA). However, in the prior art, the manner of setting the identification code on the silicon wafer carrier made of the PFA material is to load the data chip on the PFA material, however, the cost of the method is too high, the data chip needs to be protected from corrosion, and the loading of the data chip is difficult to realize on a large scale in the limited space of the silicon wafer carrier.
Embodiments of the present invention are described below with reference to fig. 1 to 4. It is to be understood that the following are only illustrative embodiments of the present invention and are not to be construed as limiting the invention.
As shown in fig. 1, the present invention provides a method for forming an identification code of a silicon wafer carrier, which includes:
s1: heating the metal needle; for example, the metal pins are heated to and above the melting temperature of the silicon wafer carrier body 100 or cover 200. Wherein, the metal needle is provided with temperature detection device, detects the temperature of metal needle in real time, avoids the formation of metal needle low temperature influence identification code 102, perhaps detects the temperature of metal needle to control when heat the metal needle. That is, the metal needle may be continuously heated to be maintained at a certain temperature, or alternatively, heated to be at a certain temperature at intervals. In addition, the metal needle is a needle-like structure of metal with a tip portion penetrating into the silicon wafer carrier body 100 or the cover 200.
S2: the metal pins form an identification code 102 pattern on the surface of the silicon wafer carrier body 100 or the surface of the covering piece 200 in a dot matrix mode; specifically, the heated metal pins are vertically inserted into the silicon wafer carrier body 100 or the cover 200 to form an array of holes having a pitch, and the array of holes forms the pattern of the identification code 102.
S3: performing color development treatment on the formed identification code 102 pattern; to facilitate identification.
S4: the silicon wafer carrier body 100 is connected to the cover 200 and the identification code 102 is placed between the cover 200 and the silicon wafer carrier body 100. In other words, the identification code 102 is protected by the silicon wafer carrier body 100 and the cover 200 from exposure to air, thereby avoiding damage to the identification code 102 when the silicon wafer carrier is placed in a corrosive environment.
Compared with laser, the method for forming the identification code of the silicon wafer carrier is capable of clearly scanning and identifying, and can be used for color development, and particles with adverse effects on an integrated circuit can be sealed in the covering piece 200, so that the risk of pollution to the silicon wafer is reduced, and the yield of the silicon wafer is improved.
Further, in one embodiment of the present invention, the silicon wafer carrier body 100 and the cover 200 are made of tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (PFA). The melting point of PFA is about 580F. Wherein the melting point of the metal needle material is far higher than 580F, such as single metal or mixture of iron, copper and the like. In an alternative embodiment of the invention, the metal needle is a steel needle.
For step S3 of the present invention: the developing process for the formed pattern of the identification code 102 includes: and injecting a color developing substance into the pit formed by the metal needle. Wherein the color-developing material can be ink, carbon black, etc. In other words, the color-developing substance may be black, color, or other colors. Can be paint or dye, and can also be powder or particles.
In some alternative embodiments of the present invention, forming the identification code 102 pattern on the surface of the silicon wafer carrier body 100 or the surface of the cover 200 in a lattice manner for the metal pins in step S2 includes: the metal pins form pits in the surface of the silicon wafer carrier body 100 or the surface of the cover 200, the depth of the pits being smaller than the thickness of the silicon wafer carrier body 100 or the cover 200.
For example, the metal pins may be formed to a pit depth of about 0.1-1mm, and all pit depths on the silicon wafer carrier body 100 or cover 200 are uniform to ensure uniform color shades. In other words, after the metal pins form the pits on the silicon wafer carrier body 100 or the cover 200, the remaining thickness on the silicon wafer carrier body 100 and the cover 200 is 0.2mm or more. In another embodiment of the present invention, as shown in fig. 2, for step S2, when the metal pins form the identification code 102 pattern on the surface of the silicon wafer carrier body 100, the steps include:
s21: forming a groove 101 on the surface of the silicon wafer carrier body 100; the grooves 101 face outwards, facilitating scanning identification by the machine. As shown in fig. 3, grooves 101 are formed on one or more surfaces of the silicon wafer carrier body 100, wherein the grooves 101 may be formed integrally by injection reservation when the silicon wafer carrier body 100 is ejected, or may be formed separately by machining after injection molding, for example, milling or the like where the identification code 102 is required.
S22: the metal pins form an identification code 102 pattern in a lattice mode in the groove 101;
s23: performing color development treatment on the formed identification code 102 pattern;
s24: the cover 200 is placed in the recess 101 and connected to the wafer carrier body 100. The thickness of the cover 200 may be less than or equal to the depth of the groove 101, so as to avoid the cover 200 protruding on the surface of the silicon wafer carrier body 100, and reduce the overall volume of the silicon wafer carrier body 100. The length and width of the cover 200 are adapted to the recess 101, facilitating the sealing of the cover 200 to the identification code 102 and the connection to the silicon wafer carrier body 100.
As shown in fig. 4, further, in other embodiments of the present invention, for step S2, when the metal needle forms the pattern of the identification code 102 on the surface of the cover 200, the steps include:
s201: forming a groove 101 on the surface of the silicon wafer carrier body 100; the groove 101 may be formed integrally by injection reservation during demolding of the silicon wafer carrier body 100, or may be formed by machining alone after injection molding.
S202: the metal needles form the pattern of the identification code 102 on the surface of the cover 200 in a lattice manner; the thickness of the cover 200 may be less than or equal to the depth of the groove 101, so as to avoid the cover 200 protruding on the surface of the silicon wafer carrier body 100, and reduce the overall volume of the silicon wafer carrier body 100. The length and width of the cover 200 is adapted to the recess 101; the identification code 102 is formed on the cover 200 to facilitate processing.
S203: performing color development treatment on the formed identification code 102 pattern;
s204: the cover 200 is placed in the recess 101 and connected to the silicon wafer carrier body 100, wherein the side of the cover 200 on which the pattern of the identification code 102 is formed is placed in the recess 101. In other words, the side of the cover 200 where the pattern of the identification code 102 is formed faces the silicon wafer carrier body 100, and the identification code 102 is displayed by the transparent cover 200 for easy recognition. There may or may not be a gap between the cover 200 and the wafer carrier body 100.
Furthermore, in other embodiments of the present invention, the surface of the silicon wafer carrier body 100 may be a plane, the identification code 102 pattern is formed on the plane in a lattice manner by heated metal pins, the cover 200 having a size larger than the identification code 102 pattern is placed over the identification code 102 pattern, and the cover 200 is connected with the silicon wafer carrier body 100. Alternatively, the identification code 102 is patterned in a lattice manner by heated metal pins on the flat surface of the cover 200, and then the cover 200 is coupled with the silicon wafer carrier body 100.
Alternatively, the identification code 102 is patterned on the silicon wafer carrier body 100 by a heated metal needle in a lattice mode, an annular concave groove is formed on the outer ring of the identification code 102, an annular protrusion matched with the concave groove is correspondingly formed on the cover 200, and the annular concave groove is matched and connected with the annular protrusion.
Additionally, in other alternative embodiments of the present invention, at step S3: after the formed pattern of the identification code 102 is subjected to the color development process, the method further comprises:
s30: the irregularities patterned by the identification code 102 are leveled. Since the metal is melted against the silicon wafer carrier body 100 or the cover 200 to form pits, the extrusion between adjacent pits forms an uneven surface in the process, and in order to ensure the surface smoothness of the silicon wafer carrier body 100 and the cover 200, the uneven portions need to be leveled. For example, the metal plate can be scraped by a cutter, or can be scraped by a hot metal plate method or can be milled by a machining method.
Still further, in one embodiment of the present invention, for step S4: connecting the silicon wafer carrier body 100 to the cover 200 includes welding the silicon wafer carrier body 100 to the cover 200. The welding can make the silicon wafer carrier body 100 and the covering piece 200 achieve better sealing effect, and can adopt a hot-melt welding method, a welding rod welding method, a friction welding method or an ultrasonic welding method.
In an alternative embodiment of the present invention, the metal needle is a hollow structure, and the hollow structure is used for storing the color-developing substance. For example, small holes are formed at the ends of the metal pins, after the metal pins complete the lattice process of the identification code 102 pattern, the temperature of the metal pins is cooled to a specified temperature, a coloring material is injected into the hollow structure of the metal pins, and the coloring material flows from the small holes of the metal pins into the pits of the identification code 102 formed on the silicon wafer carrier body 100 or the cover 200 by the metal pins.
Specifically, in one embodiment of the present invention, the metallic pins may be one or more of the concurrent patterns of identification code 102. In other words, when the metal needle is a needle head, the individual needle heads are sequentially positioned on the silicon wafer carrier body 100 or the cover 200 based on the set route, forming the pattern of the identification code 102. Then, the color developing substances are injected into the hollow structure of the metal needle, and the metal needle sequentially passes through the pits formed by the needle heads, so that the color developing substances are filled.
When there are a plurality of metal pins, for example, the metal pins are arranged in a rectangular array, the pins that are extended to perform work are selected based on the pattern of the identification code 102, and the plurality of pins are simultaneously pressed down toward the silicon wafer carrier body 100 or the cover 200, so that the complete pattern of the identification code 102 is formed at one time. Then the needles are retracted, after the metal needles are cooled to the specified temperature, the color development substances are injected into the needles at the same time, the needles forming the pattern of the identification code 102 are extended again, and the color development substances are injected into the corresponding pits, so that the color development treatment is completed. After the chromogenic material dries, it proceeds to the next step.
Of course, the metal pins may be distributed in other forms and the formation of the pattern of the identification code 102 and the color development process may be implemented based on programming control.
According to the method for forming the identification code of the silicon wafer carrier, the identification code 102 pattern is formed on the surface of the silicon wafer carrier body 100 or the surface of the covering piece 200 in a dot matrix mode through the heated metal needle, color development is carried out, and then the silicon wafer carrier body 100 is connected with the covering piece 200 for sealing, so that the protection of the identification code 102 pattern is realized, the identification code 102 forming process is simplified, the formed identification code 102 pattern is clear, the scanning identification is easy, the operation is simple and easy to implement, the cost is low, the fusion sealing effect is good, the color development substance is solidified and isolated in the covering piece 200, and the pollution of the silicon wafer is avoided.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The method for forming the identification code of the silicon wafer carrier is characterized by comprising the following steps of:
heating the metal needle;
the metal pins form identification code patterns on the surface of the silicon wafer carrier body or the surface of the covering part in a dot matrix mode;
performing color development treatment on the formed identification code pattern;
and connecting the silicon wafer carrier body with the covering piece, and placing the identification code pattern between the covering piece and the silicon wafer carrier body.
2. The method of claim 1, wherein the silicon wafer carrier body and the cover are both tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer.
3. The method of claim 1, wherein the metal pins form an identification code pattern on the surface of the silicon wafer carrier body, comprising the steps of:
forming a groove on the surface of the silicon wafer carrier body;
the metal pins form identification code patterns in the grooves in a dot matrix mode;
performing color development treatment on the formed identification code pattern;
and placing the covering piece in the groove and connecting the covering piece with the silicon wafer carrier body.
4. The method of forming an identification code of a silicon wafer carrier according to claim 1, wherein when the metal needle forms an identification code pattern on the surface of the cover member, the step comprises:
forming a groove on the surface of the silicon wafer carrier body;
the metal needle forms an identification code pattern on the surface of the covering piece in a dot matrix mode;
performing color development treatment on the formed identification code pattern;
and placing the covering piece in the groove and connecting the covering piece with the silicon wafer carrier body, wherein one surface of the covering piece, which is marked with the identification code pattern, is placed in the groove.
5. The method of forming a silicon wafer carrier identifier according to any one of claims 1 to 4, further comprising, after the developing process of the formed identifier pattern: leveling the concave-convex formed by the identification code pattern.
6. The method of any one of claims 1 to 4, wherein the connecting the silicon wafer carrier body to the cover comprises welding the silicon wafer carrier body to the cover.
7. The method of forming a silicon wafer carrier identification code as set forth in any one of claims 1 to 4 wherein the metal pins forming an identification code pattern on a silicon wafer carrier body surface or a cover surface in a lattice manner comprises: the metal needle forms a pit on the surface of the silicon wafer carrier body or the surface of the covering piece, and the depth of the pit is smaller than the thickness of the silicon wafer carrier body or the covering piece.
8. The method of claim 7, wherein the developing the formed identification code pattern comprises: and injecting a color developing substance into the pit formed by the metal needle.
9. The method of any one of claims 1 to 4, wherein the metal pins are steel pins, and the metal pins are hollow structures for storing color-developing substances therein.
10. The method of any one of claims 1 to 4, wherein the metal pins are one or more of the identification code patterns formed simultaneously.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN204414822U (en) * | 2015-01-20 | 2015-06-24 | 南京鼎信机电设备有限公司 | A kind of pipe Quick Response Code marking machine |
| CN109664026A (en) * | 2019-02-22 | 2019-04-23 | 陕西科技大学 | A kind of aluminum alloy surface small size two dimensional code laser index carving method |
| CN109823073A (en) * | 2018-07-23 | 2019-05-31 | 上海艾立曼数据技术有限公司 | Graphical identification code label and its graphical identification code production method |
| CN115241101A (en) * | 2022-05-18 | 2022-10-25 | 北京市塑料研究所有限公司 | Silicon wafer carrier with identification code and manufacturing method thereof |
| CN218101200U (en) * | 2022-05-18 | 2022-12-20 | 北京市塑料研究所有限公司 | Silicon chip carrier with identification code |
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2023
- 2023-12-20 CN CN202311758113.3A patent/CN117457545B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204414822U (en) * | 2015-01-20 | 2015-06-24 | 南京鼎信机电设备有限公司 | A kind of pipe Quick Response Code marking machine |
| CN109823073A (en) * | 2018-07-23 | 2019-05-31 | 上海艾立曼数据技术有限公司 | Graphical identification code label and its graphical identification code production method |
| CN109664026A (en) * | 2019-02-22 | 2019-04-23 | 陕西科技大学 | A kind of aluminum alloy surface small size two dimensional code laser index carving method |
| CN115241101A (en) * | 2022-05-18 | 2022-10-25 | 北京市塑料研究所有限公司 | Silicon wafer carrier with identification code and manufacturing method thereof |
| CN218101200U (en) * | 2022-05-18 | 2022-12-20 | 北京市塑料研究所有限公司 | Silicon chip carrier with identification code |
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| CN117457545B (en) | 2024-03-12 |
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