CN117451655A - MEMS infrared light source based on heating wire annular wiring method and preparation method thereof - Google Patents
MEMS infrared light source based on heating wire annular wiring method and preparation method thereof Download PDFInfo
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- CN117451655A CN117451655A CN202311232788.4A CN202311232788A CN117451655A CN 117451655 A CN117451655 A CN 117451655A CN 202311232788 A CN202311232788 A CN 202311232788A CN 117451655 A CN117451655 A CN 117451655A
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- light source
- infrared light
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 230000005855 radiation Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000002131 composite material Substances 0.000 claims abstract description 23
- 239000002086 nanomaterial Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
Abstract
The invention provides an MEMS infrared light source based on a heating wire annular wiring method and a preparation method thereof. The infrared light source comprises a substrate, a composite medium layer and a radiation enhancement layer from bottom to top. The composite dielectric layer is a film layer coated outside the resistance layer, the resistance of the heating wire is designed in an annular wiring way, and the heating wire is uniformly distributed in a radiation area, so that the thermal stability of the resistance wire is effectively improved. The film layer is a composite film formed by compositing silicon oxide and silicon nitride, and plays a role in supporting and protecting, and a rectangular air gap is reserved in the central area of the substrate to form a heat insulation area, so that the bottom surface of the whole infrared light source is suspended. The invention adopts the chemical vapor deposition method to prepare the polysilicon, utilizes the reactive ion etching to obtain the cylindrical micro-nano structure, and sputters metal on the surface to form the nano-structure radiation layer, thereby improving the emissivity. The MEMS infrared light source based on the heating wire annular wiring method has the characteristics of low power consumption, good radiation characteristic and uniform temperature distribution, and further improves the performance of the light source.
Description
Technical Field
The invention relates to the technical field of gas sensors, in particular to an MEMS infrared light source based on a heating wire annular wiring method and a preparation method thereof.
Background
The non-dispersive infrared (NDIR) sensor is an optical gas sensor composed of an infrared light source, an optical path, an infrared detector, a circuit and a software algorithm, and compared with other sensors, the NDIR gas sensor has a plurality of unique advantages, such as higher sensitivity, higher precision, better stability and the like, so that the NDIR gas sensor has wide application in the fields of industry, medical treatment, environmental protection and the like. MEMS infrared light sources are important devices for NDIR gas sensors, greatly affecting the performance of the sensor. Compared with other infrared light sources, the MEMS infrared light source manufactured by the MEMS processing technology has the characteristics of quick response, low power consumption, high radiation efficiency, excellent reliability and the like, meets the requirements of microminiaturization and high performance of sensors in practical application, and is widely integrated and applied to various infrared systems.
The MEMS infrared light source applying the micro-nano processing technology at present has small volume and lower power consumption, and the manufacturing process is also mature, so that the requirement of mass production can be met. However, the existing MEMS infrared light source has the problems of larger heat loss, low infrared emissivity of the supporting film material, larger stress caused by heating of the resistance layer, reduced mechanical strength and the like, so that the heat radiation power of the infrared light source is low. During the working process of the light source, the instability of the light source is brought about by the stress changes of different parts caused by the temperature rise process, and the instability becomes an important factor for restricting the performance of the MEMS infrared light source. The design of the heating resistor is very important to the stability of the MEMS infrared light source.
Disclosure of Invention
The invention aims to design an MEMS infrared light source based on a heating wire annular wiring method, and provides the annular wiring heating wire design method aiming at the problem of unstable light source caused by uneven heating of a resistance wire.
The invention provides an MEMS infrared light source based on a heating wire annular wiring method, which adopts the following technical scheme:
the MEMS infrared light source based on the heating wire annular wiring method comprises a substrate, a composite medium layer, a heating resistor layer and an uppermost nanostructure radiation layer from bottom to top. The resistance layer is positioned in the most central area of the composite film and is aligned with the suspended area of the substrate, namely an infrared radiation area, and the heating wires are uniformly distributed in the radiation area in a spiral annular shape by adopting annular resistance. The composite film covers the periphery of the resistor layer and forms a composite dielectric layer with the resistor layer. A rectangular air gap is reserved in the central area of the substrate to form a heat insulation area, the bottom surface of the whole infrared light source is suspended, and the suspended area is an infrared radiation area. The nano-structure radiation layer is covered on the composite medium layer, and the radiation enhancement layer has the same size as the infrared radiation area.
The technical scheme adopted for solving the technical problems is as follows: the substrate adopts a silicon substrate, and the air domain in the center of the substrate is cuboid.
The technical scheme adopted for solving the technical problems is as follows: the composite film comprises 2-3 layers of structural layers, and is a composite film structure formed by combining silicon oxide and silicon nitride. The stress in the film of the supporting layer can be balanced by adjusting the thickness of the film, and the film also plays roles of thermal insulation and electric isolation.
The technical scheme adopted for solving the technical problems is as follows: one of W, pt, mo, ni and the like with good high-temperature stability and electromigration resistance is selected as a heating wire material, and the heating electrode layer is wrapped in the support layer composite film structure, so that oxidation can be avoided, and meanwhile, the service life is prolonged.
The technical scheme adopted for solving the technical problems is as follows: the heating wire is a spiral annular wire, so that the temperature distribution is more uniform, and meanwhile, the thermal stability of the resistance wire is improved.
The technical scheme adopted for solving the technical problems is as follows: the MEMS infrared light source radiation is ash-like radiation, and the radiation intensity and efficiency of the light source increase with the increase of the surface emissivity of the central radiation area. The infrared radiation enhancement layer is covered on the composite supporting layer, and the micro-nano structure of the nano structure radiation layer is cylindrical, so that the radiation intensity of the light source is effectively improved.
Based on the same inventive concept, the invention also provides a preparation method of the MEMS infrared light source based on the heating wire annular wiring method, which comprises the following steps:
step one: firstly, preparing a supporting film layer on the front surface of the semiconductor substrate;
step two: manufacturing a resistor layer on the front support layer, and patterning the metal resistor layer;
step three: preparing polysilicon by using a plasma enhanced chemical vapor deposition process, and then forming a nanostructure by gas reactive ion etching;
step four: sputtering a layer of metal platinum or silver on the surface of the glass substrate for modification;
step five: and etching the rest silicon substrate, and releasing the bottom cavity to obtain the MEMS infrared light source.
Compared with the prior art, the invention has the advantages that:
(1) The resistance layer heating wire is designed into an annular design, so that the radiation temperature can be increased in a limited area, meanwhile, the temperature distribution in a heating area is ensured to be uniform, and the thermal stability of a light source is improved.
(2) The substrate is hollowed to form a suspended structure, so that heat conduction power consumption is reduced, and high radiation efficiency and working stability of the infrared light source are ensured. The radiation enhancement layer deposited on the composite dielectric layer also effectively improves the infrared emissivity of the light source.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
Fig. 1 is a front cross-sectional view of an MEMS infrared light source based on a heater wire annular routing method of the present invention.
Fig. 2 is a heating wire design wiring diagram of a heating resistor of a MEMS infrared light source based on a heating wire annular wiring method of the present invention.
FIG. 3 is a graph showing the temperature distribution along the longitudinal symmetry axis when the average temperature of the infrared light source is 520 ℃.
Marked in the figure as:
101. a substrate; 201. a silicon oxide film; 301. a silicon nitride film; 401. a radiation enhancement layer; 501. a heat-generating electrode layer; 601. an air field; 701. and (3) a composite support film.
Detailed Description
The present invention will be described in further detail with reference to the drawings and the specific embodiments, which are not intended to limit the scope of the claims.
The invention provides an MEMS infrared light source based on a heating wire annular wiring method, which is shown in fig. 1 and comprises a silicon substrate 101, a composite supporting film 701, a heating resistor 501 and a radiation enhancement layer 401 which are sequentially arranged from bottom to top.
The substrate material is silicon, and the center of the silicon substrate is hollowed out to form a suspended heat insulation area, so that the overall power consumption can be reduced, and the reaction speed can be improved. The substrate material dimensions were 2mm by 2mm, the thickness was 400 μm, and the rectangular air domain dimensions were 700 μm by 700 μm.
The supporting layer adopts SiO 2 -Si 3 N 4 -SiO 2 The composite film structure has the structure size of 2mm multiplied by 2mm, the thickness of the silicon oxide layer film is 1000nm, the thickness of the silicon nitride layer is 500nm, the heating resistance wire material is tungsten wire, and the thickness is 1000nm. The composite film covers the periphery of the resistor layer.
The infrared light source is covered on the outermost surface by utilizing the nano black silicon to realize regulation and control of infrared emissivity, and the radiation enhancement layer reduces the reflectivity of light and enhances infrared radiation through the light trapping effect of the micro-nano structure and the change of energy bands.
In addition, the embodiment of the invention also provides a preparation method of the MEMS infrared light source based on the heating wire annular wiring method, which specifically comprises the following steps:
step one: firstly, forming a silicon oxide layer on the front surface of the semiconductor substrate by thermal oxidation, and preparing a composite supporting film layer by chemical deposition twice;
step two: manufacturing a resistor layer on the front support layer, and patterning the metal resistor layer through wet etching;
step three: preparing polysilicon by using a plasma enhanced chemical vapor deposition process, and then forming a nano radiation layer by gas reactive ion etching;
step four: sputtering a layer of metal platinum on the surface of the metal platinum for modification;
step five: and (3) carrying out deep reactive ion etching on the rest silicon substrate, and releasing the bottom cavity to obtain the MEMS infrared light source.
As shown in FIG. 2, the heating resistor layer generates infrared radiation with specific emission wavelength and radiation quantity under the working temperature condition, and the annular wiring design of the heating wire of the resistor layer is shown in the figure. The wiring method can improve the radiation temperature in a limited area, ensure the uniform temperature distribution of a heating area and improve the thermal stability of a light source.
As shown in FIG. 3, the temperature distribution diagram along the longitudinal symmetry axis shows that the infrared light source has better temperature uniformity when the average temperature of the infrared light source is 520 ℃.
Although the invention has been described above with reference to the accompanying drawings, the invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many modifications may be made by those of ordinary skill in the art without departing from the spirit of the invention, which fall within the protection of the invention.
Claims (6)
1. The MEMS infrared light source based on the heating wire annular wiring method is characterized in that: the infrared light source structure comprises a substrate, a composite dielectric layer on the substrate, an annular routing heating resistor layer and an uppermost nanostructure radiation layer from bottom to top. The resistor layer is positioned in the most central area of the composite dielectric layer and aligned with the suspended area of the substrate.
2. The MEMS infrared light source based on the heater wire annular routing method of claim 1, wherein: the resistance heating wire adopts an annular resistor, the double layers are uniformly distributed in a radiation area in a spiral mode, and the radiation area is square.
3. The MEMS infrared light source based on the heater wire annular routing method of claim 1, wherein: the substrate material is silicon, a rectangular air gap is reserved in the central area of the substrate to form a heat insulation area, the bottom surface of the whole infrared light source is suspended, and the suspended area is an infrared radiation area. The dimensions of the substrate material are 2mm multiplied by 3mm, the thickness of the substrate material is 400 mu m to 600 mu m, and the dimensions of the rectangular air domain are 700 mu m multiplied by 700 mu m to 1000 mu m multiplied by 1000 mu m.
4. The MEMS infrared light source based on the heater wire annular routing method of claim 1, wherein: the composite dielectric layer is composed of a supporting layer and a heating resistor layer, and the size of the composite dielectric layer is consistent with the size of the outer edge of the substrate. The supporting layer is a composite film structure formed by combining silicon oxide and silicon nitride, the total number of the supporting layer comprises 2-3 layers, the thickness of the silicon oxide layer is 1000-2000 nm, and the thickness of the silicon nitride layer is 500-800 nm. The heating wires are uniformly distributed in the infrared radiation area in a spiral annular wiring mode, and the heating wires are made of one of W, pt, mo, ni materials.
5. The MEMS infrared light source based on the heater wire annular routing method of claim 1, wherein: the nano-structure radiation layer is made of a material with a cylindrical micro-nano structure, and the material is nano platinum black or nano silicon black.
6. The method for preparing the MEMS infrared light source based on the heating wire annular wiring method as set forth in claim 1, wherein the method is characterized in that: the method specifically comprises the following steps:
step one: firstly, preparing a supporting film layer on the front surface of the semiconductor substrate;
step two: manufacturing a resistor layer on the front support layer, and patterning the metal resistor layer;
step three: preparing polysilicon by using a plasma enhanced chemical vapor deposition process, and then forming a nanostructure by gas reactive ion etching;
step four: sputtering a layer of metal platinum or silver on the surface of the nano-structure to modify the nano-structure to form a final nano-structure radiation layer;
step five: and etching the rest silicon substrate, and releasing the bottom cavity to obtain the MEMS infrared light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311232788.4A CN117451655A (en) | 2023-09-22 | 2023-09-22 | MEMS infrared light source based on heating wire annular wiring method and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311232788.4A CN117451655A (en) | 2023-09-22 | 2023-09-22 | MEMS infrared light source based on heating wire annular wiring method and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117451655A true CN117451655A (en) | 2024-01-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311232788.4A Pending CN117451655A (en) | 2023-09-22 | 2023-09-22 | MEMS infrared light source based on heating wire annular wiring method and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117451655A (en) |
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2023
- 2023-09-22 CN CN202311232788.4A patent/CN117451655A/en active Pending
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