CN117430339A - Glass micro groove processing method and system and glass product - Google Patents

Glass micro groove processing method and system and glass product Download PDF

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Publication number
CN117430339A
CN117430339A CN202311307751.3A CN202311307751A CN117430339A CN 117430339 A CN117430339 A CN 117430339A CN 202311307751 A CN202311307751 A CN 202311307751A CN 117430339 A CN117430339 A CN 117430339A
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glass substrate
groove
laser
modified
glass
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徐少林
李峻
仲帅
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Southern University of Science and Technology
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Southern University of Science and Technology
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Priority to CN202311307751.3A priority Critical patent/CN117430339A/en
Publication of CN117430339A publication Critical patent/CN117430339A/en
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laser Beam Processing (AREA)

Abstract

The application provides a glass micro-groove processing method and system and a glass product, wherein the method comprises the following steps: shaping the laser into a bessel beam; irradiating the glass substrate by using a Bessel beam; controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface; and placing the glass substrate with the modified surface in an etching solution for etching to form a target micro groove on the surface of the glass substrate. According to the method, only the position of the surface formed by the angular bisectors of the groove bottom angles of the target micro grooves is irradiated, so that the laser scanning time is greatly shortened, meanwhile, glass microstructures which are formed by the glass micro grooves in different shapes can be flexibly prepared by planning the track movement of the glass substrate along the angular bisectors of the groove bottom angles of the target micro grooves, and the quality of the glass micro grooves is effectively improved by utilizing the polishing effect of chemical etching. The method can prepare the high-quality glass micro-groove and the glass micro-structure formed by the glass micro-groove efficiently and flexibly.

Description

Glass micro groove processing method and system and glass product
Technical Field
The application relates to the technical field of laser processing, in particular to a glass micro-groove processing method and system and a glass product.
Background
Glass has good chemical stability and high temperature resistance, and glass with micro-nano structure on the surface is widely applied in various fields, such as microelectronic devices, and glass with micro-grooves on the surface can be used as a fluid channel inside a microfluidic chip; in the optical field, glass with micro grooves on the surface can be applied to various optical devices as blazed gratings; in the field of communications, the use of glass with micro grooves on the surface can improve the coupling efficiency and transmission characteristics of the optical fiber and enhance the performance of the optical fiber communications system.
The micro-nano structure on the surface of the glass is processed by laser, but the controllability of the laser ablation technology is poor, the local damage of the glass is easily caused by the local concentration of high-energy laser energy, so that the processed micro-groove has poor surface quality, and for the micro-nano structure on the surface with different shapes, the laser scanning path is required to be strictly planned, so that the laser can ablate the glass in the whole micro-groove area, and the processing efficiency and the flexibility of the method are low; the method of laser modification and chemical etching is to use high-power laser to induce the glass material to generate high modification, so that the etching rate of the modified region is far higher than that of the unmodified region, and the etching of the modified region is completed before the unmodified region is etched to form the micro-nano structure, but because the etching actually only occurs in the modified region, all positions of the micro-groove region need to be highly modified to prepare a complete micro-groove, and not only is the laser scanning path strictly planned to scan the laser to all positions of the micro-groove region, but also long time is required to complete repeated scanning of the laser to all positions of the micro-groove region, so that the method has low processing efficiency and low flexibility. The prior art lacks a processing method capable of flexibly, efficiently and high-quality preparing glass surface microstructures.
Disclosure of Invention
In order to solve the above problems, embodiments of the present application provide a glass micro-groove processing method and system, and a glass product, which can flexibly, efficiently and high-quality prepare a glass surface microstructure.
An embodiment of the present application proposes a glass micro-groove processing method, including:
shaping laser into a Bessel beam, wherein the focal depth of the Bessel beam is determined according to the length of an angular bisector of a groove bottom angle of a target micro groove, and the gradient of the Bessel beam is determined according to an included angle between the angular bisector of the groove bottom angle of the target micro groove and the upper surface of a glass substrate;
performing modification on the glass substrate through the Bessel beam to form a modification line on the glass substrate, wherein the modification line is overlapped with an angular bisector of a groove bottom angle of the target micro groove;
controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein the distance between a point on the modification surface and the left side wall and the right side wall of the target micro groove is equal;
and placing the glass substrate with the modified surface in an etching solution for etching to form a target micro groove on the surface of the glass substrate, wherein the etching rate of the modified surface in the glass substrate and the etching rate of a non-modified area meet a preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed.
In some embodiments, the shaping the laser into a bessel beam includes:
determining the energy density of the laser according to the etching rate ratio and the material type of the glass substrate;
adjusting laser power according to the energy density of the laser;
and carrying out phase modulation on the laser according to the length and the inclination of the angular bisector of the groove bottom angle of the target micro groove so as to form the Bessel beam.
In some embodiments, the determining the energy density of the laser according to the etching rate ratio and the material type of the glass substrate includes:
determining the damage degree of the modified surface according to the etching rate ratio;
determining a damage threshold of the glass substrate according to the material type of the glass substrate;
and determining the energy density of the laser according to the damage degree and the damage threshold.
In some embodiments, the adjusting the laser power according to the energy density comprises:
controlling the deflection direction of the half wave plate according to the energy density;
and regulating the polarization state of the laser through the half-wave plate, and enabling the laser with the regulated polarization state to pass through a Greenwich prism so as to regulate the laser power.
In some embodiments, the method further comprises:
And determining the etching rate ratio according to the length of the angular bisector of the groove bottom angle of the target micro groove and the preset groove width of the target micro groove.
In some embodiments, the method further comprises:
monitoring the actual groove width of the target micro groove;
and stopping etching the glass substrate under the condition that the actual groove width of the target micro groove is not smaller than the preset groove width of the target micro groove.
In some embodiments, the aspect ratio of the modified surface is greater than 100.
In some embodiments, the length of the modification line is not less than a preset groove depth of the target micro groove.
Embodiments of a second aspect of the present application provide a glass micro-groove processing system, comprising:
the beam shaping module is used for shaping the laser into a Bessel beam, wherein the focal depth of the Bessel beam is determined according to the length of an angular bisector of a groove bottom angle of the target micro groove;
a beam irradiation module for irradiating a glass substrate through the Bessel beam to form a modification line on the glass substrate, wherein the modification line coincides with an angular bisector of a groove bottom angle of the target micro groove;
the displacement module is used for controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein points on the modification surface are located at the middle points of the left side wall and the right side wall of the target micro groove in the horizontal direction;
And the etching module is used for placing the glass substrate with the modified surface in an etching solution for etching so as to form a target micro groove on the surface of the glass substrate, wherein the etching rate of the modified surface in the glass substrate and the etching rate of a non-modified area meet the preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed.
A third aspect of the embodiments of the present application provides a glass article prepared by the glass micro-groove processing method of any one of the embodiments of the first aspect.
The embodiment of the application provides a glass micro-groove processing method and system and a glass product, wherein the method comprises the following steps: shaping laser into a Bessel beam, wherein the focal depth of the Bessel beam is determined according to the length of an angular bisector of a groove bottom angle of a target micro groove, and the gradient of the Bessel beam is determined according to an included angle between the angular bisector of the groove bottom angle of the target micro groove and the upper surface of a glass substrate; irradiating the glass substrate through the Bessel beam to form a modified line on the glass substrate, wherein the modified line is overlapped with an angular bisector of a groove bottom angle of the target micro groove; controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein the distance between a point on the modification surface and the left side wall and the right side wall of the target micro groove is equal; and placing the glass substrate with the modified surface in an etching solution for etching to form a target micro groove on the surface of the glass substrate, wherein the etching rate of the modified surface in the glass substrate and the etching rate of a non-modified area meet a preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed. According to the method, laser is modulated into the Bessel beam with the specific focal depth, the Bessel beam is used for irradiating the position of the angular bisector of the groove bottom angle of the target micro groove to form the modified surface with lower modification degree, the modified surface and the non-modified area of the glass substrate are etched according to the preset etching rate ratio in the etching process, the target micro groove is formed on the glass substrate through the weak modified surface induction etching process, repeated scanning is not needed to be conducted on all positions of the groove body area for forming high modification, the laser scanning time is effectively shortened, meanwhile, for glass microstructures of different shapes, only the moving path of the glass substrate is needed to be simply planned to enable the laser to scan the surface formed by the angular bisector of the groove bottom angle of each position of the glass microstructure, and the laser is not needed to scan the whole groove body area by strictly planning the laser scanning path, and the roughness of the surface of the glass micro groove is reduced by utilizing the polishing effect of chemical etching.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. The objectives and other advantages of the application will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
FIG. 1 is a schematic flow chart of a glass micro-groove processing method according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a glass micro-groove processing system according to an embodiment of the present application;
fig. 3 is a sub-flowchart of step S101 in fig. 1;
fig. 4 is a sub-flowchart of step S301 in fig. 3;
FIG. 5 is a sub-flowchart of step S302 in FIG. 3;
FIG. 6 is a modular schematic of a glass micro-groove processing system according to an embodiment of the present application;
FIG. 7a is an elevation view of a change in the structure of a glass substrate during processing of a symmetrical V-groove using the glass micro-groove processing method proposed in the present application;
FIG. 7b is a top view of the structural changes of a glass substrate during processing of a symmetrical V-groove using the glass micro-groove processing method of the present application;
FIG. 8a is an elevation view of a change in the structure of a glass substrate during processing of an asymmetric V-groove using the glass micro-groove processing method proposed in the present application;
FIG. 8b is a top view of a glass substrate structure change during processing of a symmetrical V-groove using the glass micro-groove processing method of the present application;
FIG. 9a is an elevation view of a change in the structure of a glass substrate during processing of a micro pyramid array using the glass micro groove processing method as set forth herein;
FIG. 9b is a top view of the structural changes of a glass substrate during processing of a micro pyramid array using the glass micro groove processing method as set forth in the present application;
FIG. 10 is a top view of the internal structure of a glass substrate during the fabrication of a ring-intersecting glass surface micro-nano structure by the glass micro-groove processing method described above;
reference numerals: 201-a computer; 202-a controller; 203-ultrafast laser; 204-an electronically controlled rotating half wave plate; 205-gram prism; 206-a mirror; 207-spatial light modulator; 208-convex lenses; 209-an objective lens; 210-a glass substrate; 211-displacement stage.
The accompanying drawings are included to provide a further understanding of the technical aspects of the present application, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present application and together with the examples of the present application, and not constitute a limitation of the technical aspects of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
It should be noted that although functional block division is performed in a device diagram and a logic sequence is shown in a flowchart, in some cases, steps shown or described may be performed in a different order than block division in a device or in a flowchart. The terms first, second and the like in the description and in the claims and in the above-described figures, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of the present application only and is not intended to be limiting of the present application.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the disclosed aspects may be practiced without one or more of the specific details, or with other methods, components, devices, steps, etc. In other instances, well-known methods, devices, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the disclosure.
Referring to fig. 1, a first aspect of the present application proposes a glass micro-groove processing method, including but not limited to the following steps S101 to S104.
Step S101, shaping laser into a Bessel beam, wherein the focal depth of the Bessel beam is determined according to the length of an angular bisector of a groove bottom angle of a target micro groove, and the gradient of the Bessel beam is determined according to an included angle between the angular bisector of the groove bottom angle of the target micro groove and the upper surface of the glass substrate;
step S102, irradiating the glass substrate through a Bessel beam to form a modified line on the glass substrate, wherein the modified line is overlapped with an angular bisector of a groove bottom angle of the target micro groove;
step S103, controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein the distance between a point on the modification surface and the left side wall and the right side wall of the target micro groove are equal;
and step S104, placing the glass substrate with the modified surface in an etching solution for etching to form a target micro groove on the surface of the glass substrate, wherein the etching rate of the modified surface in the glass substrate and the etching rate of a non-modified area meet the preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed.
In step S101 of some embodiments, referring to fig. 2, the laser may be a gaussian beam generated by the ultrafast laser 203, the laser is shaped into a bessel beam with a preset focal depth, the bessel beam is focused to form an elongated focusing line with a preset length, specifically, the beam generated by the ultrafast laser 203 is injected into the spatial light modulator 207, and the phase of the beam is modulated to shape the beam into the bessel beam with the preset focal depth. It is understood that the focal depth of the bessel beam is determined according to the length of the angular bisector of the bottom angle of the target micro-groove, wherein the bottom angle is the angle formed by the left side wall and the right side wall of the target micro-groove, the length of the angular bisector of the bottom angle is the length of a line segment formed by extending from the bottom angle of the target micro-groove to the upper surface of the glass substrate along the angular bisector line protection line, and specifically, the focal depth of the bessel beam is equal to the length of the angular bisector of the bottom angle of the target micro-groove, or the focal depth of the bessel beam is determined by combining a certain compensation coefficient on the basis of the length of the angular bisector of the bottom angle of the target micro-groove, so that the length of the modified line formed by the irradiation of the beam on the glass substrate 210 is ensured to be not less than the preset groove depth of the target micro-groove. The inclination of the bessel beam is determined according to the included angle between the angular bisector of the groove bottom angle of the target micro groove and the upper surface of the glass substrate, for example, when the target micro groove to be prepared is a symmetrical V-shaped groove, the bessel beam is perpendicular to the upper surface of the glass substrate, and when the asymmetric V-shaped groove is required to be prepared, the bessel beam is inclined to the upper surface of the glass substrate and enters the glass substrate. Specifically, the modulated bessel beam may be compressed with high fidelity by a 4f transmission focusing system composed of a convex lens 208 and an objective lens 209 and moved to the objective lens 209 to focus, forming a focusing line, and referring to fig. 2, it will be understood that at least one mirror 206 may be provided between the input and output ends of the spatial light modulator and the convex lens 208 and the objective lens 209 to fold the optical path system.
In step S102 of some embodiments, a long and narrow focal line is formed in a preset focal depth range after the bessel beam is focused, the focal line area has higher energy density, the modulated bessel beam irradiates the glass substrate, and the irradiated material inside the glass substrate can be induced to absorb photons, so that the damage threshold of the material of the glass substrate is broken, the atomic structure inside the material is changed, and a modified line is formed, and the material with the changed atomic structure has lower chemical stability than that of the material of the glass substrate which is not modified, and in the etching process, the material of the modified line area has a faster etching rate than that of the material of the non-modified area. It can be understood that since only the angular bisector position of the groove bottom angle of the target micro groove is irradiated, the modification degree of the modification line formed inside the glass substrate is low, and thus, during the etching process, the material on the modification line and the material in the non-modification region are etched respectively according to the preset etching rate ratio. Specifically, the etching rate ratio may be determined according to the length of the angular bisector of the bottom angle of the target micro-groove and the preset groove width of the target micro-groove, and it is understood that the preset groove width refers to the maximum groove width of the target micro-groove at the opening, the length of the angular bisector of the bottom angle of the target micro-groove reflects the length etched along the extension path of the modified surface in the etching process, half of the preset groove width reflects the length of the non-modified area etched in a single direction in the etching process, and the ratio of the two reflects the ratio of the etching length of the modified surface to the etching length of the non-modified area in the same etching duration, which may be regarded as the ratio of the etching rate of the modified surface to the etching rate of the non-modified area, i.e., the ratio may be regarded as the preset etching rate ratio.
In step S103 of some embodiments, in the process of irradiating the glass substrate with the bessel beam, the glass substrate is controlled to move according to a planned path, so that a modified surface formed by splicing modified lines may be formed, where the preset path may be a straight line, an S-shape, an arc shape, a circular shape, a path formed by overlapping the above shapes, or the like, and the specific preset path may be determined according to the shape of the target micro groove to be processed, which is not limited in this embodiment, as will be known to those skilled in the art. It is understood that the preset path of the glass substrate movement is a path formed by the angular bisectors of the groove bottom angles at each position of the target micro groove, and as the modifying line is coincident with the angular bisectors of the groove bottom angles of the target micro groove, any point on the modifying surface formed by splicing the modifying line is equal to the distance between the left side wall and the right side wall of the target micro groove. Specifically, the glass substrate may be placed on the three-axis precision displacement table 211, after a moving track of the angular bisector of the bottom angle of the target micro-groove on the horizontal section is planned in the computer 201, the moving track is loaded into the controller 202, and the three-axis precision displacement table is controlled by the controller to move, so that the glass substrate placed on the three-axis precision displacement table is also displaced, and the glass substrate is moved according to a preset path, so that a modified surface formed by splicing the modified lines is formed inside the glass substrate. It will be appreciated that by planning the movement path of the displacement stage, a modified surface of a specific shape and a combination of a plurality of modified surfaces may be formed inside the glass substrate, for example, a modified surface of an S-shaped track may be formed inside the glass substrate, or a modified surface combination composed of two sets of orthogonal parallel surfaces may be formed inside the glass substrate, and the specific three-axis precision displacement stage movement path planning method is not limited in the present application.
In step S104 of some embodiments, after forming a modified surface inside a glass substrate by laser scanning, the glass substrate is placed in a chemical solution for etching, in the etching process, the etching rate of the modified surface is higher than that of a non-modified area, and the etching rate between the modified surface and the non-modified area meets a preset etching rate ratio. Specifically, taking the etching rate of the modified line as twice the etching rate of the non-modified region as an example, in the etching process, the solution etches the material at the intersection line position of the modified surface and the upper surface of the glass substrate first, a concave structure is formed on the glass substrate, then the material at the non-modified region around the intersection line is etched at a double rate by taking the concave structure as the center, simultaneously the material at the modified region exposed at the bottom of the intersection line is etched at a double rate, and after the material at the bottom of the intersection line is etched, the material at the non-modified region around the region is etched at a double rate by taking the region as the center, and simultaneously the material in the extending direction of the modified surface is etched at a double rate, so that in the etching process, the continuously-enlarged concave structure is formed on the surface of the glass substrate, and finally the target micro-groove is formed. It can be understood that, since the etching speeds of the materials in the non-modified regions are the same, that is, the distances between the materials in the non-modified regions around the same point on the modified surface are the same, the distances between any point on the modified surface and the left side wall and the right side wall of the target micro groove are equal, and finally, the target micro groove structure with the angle bisector of the base angle coincident with the modified line is formed. In the etching process, the actual groove width of the micro groove is monitored in real time, when the actual groove width of the micro groove is not smaller than the preset groove width, the etching is finished, the etching of the glass substrate is stopped, and at the moment, the target micro groove taking the modification line as an angular bisector of the groove bottom angle is formed inside the glass substrate.
It will be appreciated that the etching process may be performed in an ultrasonic environment, and that by using the mechanical vibration of the ultrasonic waves, the etching process may be further accelerated, the etching efficiency may be improved, and the roughness of the etched surface may be reduced. In addition, the collapse of the bubbles creates higher pressures that accelerate the detachment of the etched material, thereby accelerating the exchange of substances between the etched solution and the material to be processed, and the etching process. Meanwhile, the diffusion of the solution can be accelerated by the mechanical vibration of the ultrasonic wave, so that the solution is prevented from gathering, and the etching uniformity is improved.
In this embodiment, the laser is shaped into the bessel beam with the preset focal depth, the bessel beam is used to perform single irradiation on the angular bisector of the groove bottom angle of the target micro groove to form the modification line with weak modification degree, the displacement table is matched to move in the single irradiation process, so that the modification surface with weak modification degree is formed inside the glass substrate, the glass substrate after the modification surface is placed in the etching solution for etching, the modification surface of the glass substrate has higher etching rate, but the etching rate of the non-modification area is lower, but the modification degree of the formed modification surface is lower due to the irradiation only on the modification surface, in particular, in the etching process, the intersection line of the upper surface of the glass substrate and the modification surface is etched firstly, then the non-modification area around the intersection line is etched by taking the intersection line as the center, and the target micro groove with the modification line as the angular bisector of the groove body is formed on the glass substrate according to the preset etching rate ratio. Compared with the technical means that the material of the whole groove body area is repeatedly scanned by high-energy laser through strictly planning a laser scanning path, and then the groove body area which is highly modified is rapidly etched in solution and the non-modified area is reserved, the method only needs to irradiate the angular bisector position of the groove bottom angle of the target micro groove, controls the glass substrate to move according to the track of the angular bisector of the groove bottom angle of the target micro structure in the irradiation process, forms a modified surface with lower modification degree, and then uses the modified surface to induce an etching process, so that the target micro groove with low roughness and high surface quality can be prepared, the laser scanning path is not strictly planned, and the repeated scanning of the groove body area is not needed, the flexibility and the efficiency of laser processing are greatly improved, and the high-quality glass micro groove can be flexibly and efficiently prepared.
Referring to fig. 3, in some embodiments, step S101 includes, but is not limited to, steps S301 through S303.
Step S301, determining the energy density of laser according to the etching rate ratio and the material type of the glass substrate;
step S302, adjusting laser power according to the energy density of the laser;
step S303, performing phase modulation on the laser according to the length and the inclination of the angular bisector of the groove bottom angle of the target micro groove, so as to form a bessel beam.
In step S301 of some embodiments, the etching rate ratio reflects a proportional relationship between the etching rates of the material of the modified surface and the material of the non-modified region, which depends on the modification degree of the modified surface, and the higher the modification degree is, the higher the damage degree of the material is, the lower the chemical stability is, and the higher the etching rate is; the type of the glass substrate determines the damage threshold of the glass substrate material, for example, the damage threshold of the quartz glass melted by hydrogen carrier at 355nm laser can reach 22.2J/cm 2 It can be understood that the higher the energy density of the laser is, the higher the photon absorption efficiency of the material in the glass substrate is, the higher the modification degree of the material is, the energy density of the laser required for etching the material of the modified surface and the material of the non-modified area according to the etching rate ratio is calculated based on the etching rate ratio and the material type of the glass substrate, so that the modification degree of the modified surface can be accurately controlled by adjusting the laser power, and the material of the modified surface and the material of the non-modified area are etched according to the preset etching rate ratio.
In step S302 of some embodiments, the power of the laser may be adjusted according to the required laser energy density, so that a modified surface of a modification degree corresponding to the etching rate ratio may be formed after the laser scans the glass substrate. The conversion relation of the laser power to the laser energy density adjustment laser is energy density (W/cm) 3 ) Laser power (W)/laser beam volume (cm) 3 ) Under the condition that the laser beam volume is unchanged, the energy density of the laser is in direct proportion to the laser power, the laser is adjusted to the power required by enabling the modified surface and the non-modified area to meet the preset etching rate ratio according to the energy density determined in the step S301, and the modified surface with the corresponding modification degree can be formed by scanning the glass substrate through the laser, so that the modified surface and the non-modified area are etched according to the preset etching rate ratio.
In step S303 of some embodiments, referring to fig. 2, after adjusting the power of the laser, the laser may be injected into the spatial light modulator 207 to modulate the phase of the laser, and specifically, the spatial light modulator is an optical device capable of wavefront modulating the optical wave, by changing the phase and amplitude of the optical beam, the optical field is precisely controlled and adjusted, and the spatial light modulator is formed by a large number of independent tiny pixels, each pixel may be used to change the phase or amplitude of the light passing through the device, after loading the phase map of the bessel beam into the spatial light modulator, the spatial light modulator adjusts the state of each tiny pixel according to the loaded phase map, and the phase of the bessel beam is simulated in space, so that the laser passing through the spatial light modulator is distributed according to the shape of the phase map, and forms a plurality of focuses closely distributed on a specific distance, and the multiple focuses are connected into one focal line in space, thereby forming the bessel beam.
In the embodiment of the application, the energy density of the laser required for enabling the glass substrate to generate the modification degree corresponding to the etching rate ratio is determined based on the preset etching rate and the material type of the glass substrate, so that the power of the laser is adjusted, and then the phase of the laser is adjusted through the spatial light modulator, so that the laser is shaped into the Bessel beam with specific focal depth and energy density, and a modification surface with specific modification degree can be formed after the glass substrate is scanned by the beam.
Referring to fig. 4, in some embodiments, step S301 includes, but is not limited to, steps S401 through S403 as follows.
Step S401, determining the damage degree of the modified surface according to the etching rate ratio;
step S402, determining a damage threshold of the glass substrate according to the material type of the glass substrate;
step S403, determining the energy density of the laser according to the damage degree and the damage threshold.
In step S401 of some embodiments, the etching rate ratio reflects the ratio between the etching rate of the material on the modified surface and the etching rate of the material in the non-modified region, and it is understood that the higher the damage degree of the material, the lower the chemical stability thereof, the higher the etching rate of the solution, and the material in the non-modified region does not absorb photons, and the etching rate thereof in the solution is fixed, and the damage degree of the modified surface can be determined based on the etching rate ratio.
In step S402 of some embodiments, the damage threshold is different for glass substrates of different material types, such as a hydrogen carrier melted quartz glass with a damage threshold of 22.2J/cm at 355nm laser 2 The corresponding damage threshold can be found based on the material type, when the energy density of the laser is close to or exceeds the loss threshold of the material, the laser can induce multiphoton absorption in the material, break through the damage threshold of the glass substrate and change the atomic structure in the material.
In step S403 of some embodiments, the energy density of the laser light required to form the modified surface corresponding to the damage degree may be determined by combining the damage degree of the modified surface and the damage threshold of the glass substrate material, and it is understood that the damage degree of the modified surface is positively correlated with the energy density of the bessel beam irradiated to the glass substrate, and the higher the energy density of the laser light, the higher the multiphoton absorption efficiency of the material, and the higher the damage degree.
Referring to fig. 5, step S302 may include, but is not limited to, steps S501 to S502.
Step S501, controlling the deflection direction of the half wave plate according to the energy density;
step S502, the polarization state of the laser is adjusted through a half-wave plate, and the laser with the adjusted polarization state passes through a Greenwich prism to adjust the laser power.
In step S501 of some embodiments, referring to fig. 2, the deflection direction of the electronically controlled rotating half-wave plate 204 is adjusted according to the energy density required by the laser, so that the polarization state of the laser can be adjusted to be a desired incident polarization state, specifically, a specific rotation signal can be applied to the electronically controlled rotating half-wave plate 204 by the controller 202 to mechanically deflect the same by a preset angle, and it can be understood that the half-wave plate is a device with special optical properties, and the polarization state of the laser can be adjusted. It is usually made of a material having a specific crystal structure, having a birefringent effect in the optical axis direction. When linearly polarized light passes through the half-wave plate, the linearly polarized light can be decomposed into two linearly polarized components in orthogonal directions, namely a fast axis and a slow axis, and according to the design of the half-wave plate, a phase difference exists between the fast axis and the slow axis, and the phase difference between the fast axis and the slow axis can be changed by rotating the half-wave plate so as to influence the polarization state of the light passing through the half-wave plate. For example, when the phase difference is zero, the light passing through the half-wave plate will maintain the original linear polarization state. And when the phase difference is half wavelength, the light passing through the half wave plate will undergo a 180 degree phase shift.
In step S502 of some embodiments, the polarization state of the laser light is changed after passing through the half-wave plate adjusted to the specific deflection direction, at this time, the polarization state of the laser light is adjusted to be the ideal incident polarization state, and when the laser light enters the grazing prism 205, referring to fig. 2, the distribution ratio between the two orthogonal polarization components of the laser light can be adjusted by using the splitting characteristic of the grazing prism, so as to adjust the laser power.
The embodiment of the present application also proposes a glass micro-groove processing system 600, comprising:
a beam shaping module 610, configured to shape the laser into a bessel beam, where a focal depth of the bessel beam is determined according to a length of an angular bisector of a groove bottom angle of the target micro groove, and an inclination of the bessel beam is determined according to an included angle between the angular bisector of the groove bottom angle of the target micro groove and an upper surface of the glass substrate;
a beam irradiation module 620 for irradiating the glass substrate with a bessel beam to form a modification line on the glass substrate, wherein the modification line coincides with an angular bisector of a groove bottom angle of the target micro groove;
the displacement module 630 is used for controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein the point on the modification surface is equal to the distance between the left side wall and the right side wall of the target micro groove;
and an etching module 640, configured to etch the glass substrate with the modified surface in an etching solution to form a target micro groove on the surface of the glass substrate, where the etching rate of the modified surface in the glass substrate and the etching rate of the non-modified area meet a preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed.
It can be understood that the above system corresponds to the glass micro groove processing method in the embodiment of the present application, has similar technical features and the same beneficial effects, and is not described herein again.
The embodiment of the present application also provides a glass product prepared by the glass micro-groove processing method, and a specific embodiment is described below with reference to fig. 7a to 10.
Fig. 7a and 7b are, respectively, the processing aspect ratio 1 by the glass micro-groove processing method described above: 1, firstly, perpendicularly irradiating the glass substrate through Bessel beams, forming a modified line with high depth-to-width ratio perpendicular to the upper surface of the glass substrate in the material, controlling the glass substrate to move in the process of irradiating the glass substrate through the beams, so that the position of the modified line moves to form a modified plane, then placing the glass substrate with the modified plane in a solution for etching, firstly etching the intersecting line of the modified plane and the upper surface of the glass substrate by the solution to form a fine concave structure, taking the concave structure as the center, etching the modified plane downwards at twice etching rate, etching non-modified areas around the concave structure at one time etching rate, enabling the concave structure to be continuously enlarged, and finally forming the symmetrical V-shaped groove with the depth-to-width ratio of 1:1.
Fig. 8a and 8b are respectively a front view variation diagram and a top view variation diagram of an internal structure of a glass substrate in the process of preparing an asymmetric V-shaped groove by the glass micro-groove processing method, since a longitudinal section of the V-shaped groove is triangular, after an angular bisector of a base angle of the triangle is determined, a Bessel beam is used for irradiating the glass substrate at a certain inclination angle, a modified line which is overlapped with the angular bisector of a groove base angle of the asymmetric V-shaped groove is formed in the glass substrate, the glass substrate is controlled to move in the process of irradiating the glass substrate by the beam, the modified line is moved to form an inclined modified surface, then the glass substrate with the modified surface is placed in a solution for etching, the intersecting line of the modified surface and the upper surface of the glass substrate is etched firstly to form a fine concave structure, the concave structure is taken as a center, the modified surface is etched at a double etching rate along the inclined lower direction, and a non-modified area around the concave structure is etched at a double etching rate, so that the concave structure is continuously enlarged, and etching is stopped when the maximum groove width reaches the preset groove width of the micro-groove, and the asymmetric V-shaped groove is formed.
Fig. 9a and 9b are respectively a front view and a top view of an internal structure of a glass substrate in the process of preparing a micro pyramid array by the glass micro groove processing method, firstly, irradiating the glass substrate by using a Bessel beam, controlling the glass substrate to move in the irradiation process, forming a modified surface combination formed by two groups of orthogonal parallel surfaces in the glass substrate, placing the glass substrate with the modified surface combination in an etching solution, in the etching process, firstly, etching intersecting lines of each modified surface and the upper surface of the glass substrate on the surface of the glass substrate by the solution to form a concave structure distributed in nine grids, and then, based on the concave structure, etching materials on the modified surface at twice etching rate and materials in non-modified areas at one etching rate to four sides, gradually increasing the width and depth of the concave structure, and finally forming the micro pyramid array. It can be understood that in the etching process of preparing the micro pyramid array, the etching can be stopped before the depth of the micro groove reaches the length of the modified line, so that a micro pyramid array structure can be formed, or laser is modulated into a Bessel beam with shorter focal depth, a shorter modified line is formed inside the glass substrate, and the micro pyramid structure can also be prepared.
Fig. 10 is a top view showing the internal structure of a glass substrate during the process of preparing a glass surface micro-nano structure formed by intersecting circular rings by the glass micro-groove processing method. Firstly, the upper surface of a glass substrate is vertically irradiated by Bessel beams, and a triaxial precise displacement table is controlled to move according to the track of an intersecting circle in the irradiation process, so that a modified surface in an intersecting circle shape is formed inside the glass substrate, then the glass substrate with the modified surface is placed in a solution for etching, the intersecting line of the modified surface and the upper surface of the glass substrate is firstly etched by the solution, a fine concave structure is formed, the modified surface is etched by taking the concave structure as the center along the oblique lower direction at a double etching rate, and non-modified areas around the concave structure are etched by one time etching rate, so that a surface micro-nano structure with the intersecting circular ring as shown in fig. 10 is formed on the glass substrate.
It should be noted that, although the above embodiments all use a straight plane as the modifying surface, those skilled in the art should know that by planning the displacement path of the displacement table, the glass substrate moves according to the curved track of the circle, the S-shape, the arc and the composite track formed by overlapping the tracks, and the curved modifying surface can be etched, so that the etching process is induced to form the circular groove, the S-shape micro groove or the arc micro groove and the complex micro-nano structure formed by overlapping the groove bodies.
The flow diagrams depicted in the figures are exemplary only, and do not necessarily include all of the content and operations/steps, nor must they necessarily be run in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the order of actual operations may be changed according to actual situations.
Those of ordinary skill in the art will appreciate that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof.
The terms "comprises" and "comprising," along with any variations thereof, in the description of the present application and in the above-described figures, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus.
It should be understood that in this application, "at least one" means one or more, and "a plurality" means two or more. "and/or" for describing the association relationship of the association object, the representation may have three relationships, for example, "a and/or B" may represent: only a, only B and both a and B are present, wherein a, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s). For example, at least one (one) of a, b or c may represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b, c may be single or plural.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
Preferred embodiments of the present application are described above with reference to the accompanying drawings, and thus do not limit the scope of the claims of the embodiments of the present application. Any modifications, equivalent substitutions and improvements made by those skilled in the art without departing from the scope and spirit of the embodiments of the present application shall fall within the scope of the claims of the embodiments of the present application.

Claims (10)

1. A method of glass micro-groove processing, the method comprising:
shaping laser into a Bessel beam, wherein the focal depth of the Bessel beam is determined according to the length of an angular bisector of a groove bottom angle of a target micro groove, and the gradient of the Bessel beam is determined according to an included angle between the angular bisector of the groove bottom angle of the target micro groove and the upper surface of a glass substrate;
irradiating the glass substrate through the Bessel beam to form a modified line on the glass substrate, wherein the modified line is overlapped with an angular bisector of a groove bottom angle of the target micro groove;
Controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein the distance between a point on the modification surface and the left side wall and the right side wall of the target micro groove is equal;
and placing the glass substrate with the modified surface in an etching solution for etching to form a target micro groove on the surface of the glass substrate, wherein the etching rate of the modified surface in the glass substrate and the etching rate of a non-modified area meet a preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed.
2. The method of claim 1, wherein shaping the laser into a bessel beam comprises:
determining the energy density of the laser according to the etching rate ratio and the material type of the glass substrate;
adjusting laser power according to the energy density of the laser;
and carrying out phase modulation on the laser according to the length and the inclination of the angular bisector of the groove bottom angle of the target micro groove so as to form the Bessel beam.
3. The method of claim 2, wherein the determining the energy density of the laser based on the etch rate ratio and the material type of the glass substrate comprises:
Determining the damage degree of the modified surface according to the etching rate ratio;
determining a damage threshold of the glass substrate according to the material type of the glass substrate;
and determining the energy density of the laser according to the damage degree and the damage threshold.
4. The method of claim 2, wherein said adjusting the laser power according to the energy density of the laser comprises:
controlling the deflection direction of the half wave plate according to the energy density;
and regulating the polarization state of the laser through the half-wave plate, and enabling the laser with the regulated polarization state to pass through a Greenwich prism so as to regulate the laser power.
5. The method according to claim 1, wherein the method further comprises:
and determining the etching rate ratio according to the length of the angular bisector of the groove bottom angle of the target micro groove and the preset groove width of the target micro groove.
6. The method according to claim 1, wherein the method further comprises:
monitoring the actual groove width of the target micro groove;
and stopping etching the glass substrate under the condition that the actual groove width of the target micro groove is not smaller than the preset groove width of the target micro groove.
7. The method of claim 1, wherein the modified surface has an aspect ratio greater than 100.
8. The method of claim 1, wherein the length of the modification line is not less than a preset groove depth of the target micro groove.
9. A glass micro-groove processing system, the system comprising:
a beam shaping module, configured to shape the laser into a bessel beam, where a focal depth of the bessel beam is determined according to a length of an angular bisector of a groove bottom angle of the target micro groove, and an inclination of the bessel beam is determined according to an included angle between the angular bisector of the groove bottom angle of the target micro groove and an upper surface of the glass substrate;
a beam irradiation module for irradiating the glass substrate by the Bessel beam to form a modified line on the glass substrate, wherein the modified line is coincident with an angular bisector of a groove bottom angle of the target micro groove;
the displacement module is used for controlling the glass substrate to move according to a preset path in the irradiation process so as to enable the modification line to move to form a modification surface, wherein the distance between a point on the modification surface and the left side wall and the right side wall of the target micro groove is equal;
And the etching module is used for placing the glass substrate with the modified surface in an etching solution for etching so as to form a target micro groove on the surface of the glass substrate, wherein the etching rate of the modified surface in the glass substrate and the etching rate of a non-modified area meet the preset etching rate ratio, and the non-modified area is an area in the glass substrate where the modified surface is not formed.
10. A glass article prepared by the glass micro-groove processing method of any one of claims 1 to 8.
CN202311307751.3A 2023-10-10 2023-10-10 Glass micro groove processing method and system and glass product Pending CN117430339A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118465903A (en) * 2024-07-10 2024-08-09 北京卓镭激光技术有限公司 Grating ruler processing method, device and system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118465903A (en) * 2024-07-10 2024-08-09 北京卓镭激光技术有限公司 Grating ruler processing method, device and system

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