CN117410319A - HEMT device and preparation method thereof - Google Patents
HEMT device and preparation method thereof Download PDFInfo
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- CN117410319A CN117410319A CN202311695871.5A CN202311695871A CN117410319A CN 117410319 A CN117410319 A CN 117410319A CN 202311695871 A CN202311695871 A CN 202311695871A CN 117410319 A CN117410319 A CN 117410319A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 224
- 239000002184 metal Substances 0.000 claims description 69
- 229910052751 metal Inorganic materials 0.000 claims description 69
- 150000002500 ions Chemical class 0.000 claims description 60
- 238000005468 ion implantation Methods 0.000 claims description 44
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 32
- 239000011241 protective layer Substances 0.000 claims description 26
- 238000002955 isolation Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000009471 action Effects 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 11
- 230000005611 electricity Effects 0.000 abstract description 7
- 230000003068 static effect Effects 0.000 abstract description 7
- 238000004220 aggregation Methods 0.000 abstract description 5
- 230000002776 aggregation Effects 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- -1 silicon ions Chemical class 0.000 description 19
- 238000002161 passivation Methods 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000009413 insulation Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Abstract
The invention relates to the field of semiconductors, and discloses a HEMT device and a preparation method thereof, which aim to solve the problem that the HEMT device is damaged due to charge aggregation, and the preparation method comprises the following steps: a substrate; an epitaxial structure layer arranged on the surface of the substrate; the source electrode, the drain electrode and the grid electrode are arranged on the surface of the epitaxial structure layer, which is away from the substrate; the source electrode is electrically connected with a scribing channel around the HEMT device. The HEMT device comprises a substrate, an epitaxial structure layer, a source electrode, a drain electrode and a grid electrode, wherein the source electrode is electrically connected with a scribing channel around the HEMT device. Static electricity generated in the process of preparing the HEMT device can be transmitted to the surface of the whole wafer through an electric connection channel between the source electrode and the scribing channel, so that the static electricity is uniformly distributed on the whole wafer, the situation that an electrostatic electric field is overlarge on a single HEMT device is avoided, and damage to the HEMT device caused by charge aggregation is avoided.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a HEMT device and a preparation method thereof.
Background
The HEMT (High Electron Mobility Transistor ) is manufactured using an etching process, and the high energy plasma builds up charge on the HEMT device causing electrostatic discharge (Electrostatic Discharge, ESD) and hence device damage. In addition, for the GaN HEMT device, a unique preparation process adopted in the preparation process, such as a gold tearing process (a mode of adopting a blue film to attach and tear gold is adopted for metal stripping), can also cause electrostatic discharge on the device, and yield loss of the device is caused.
In order to solve the influence of electrostatic discharge on the device yield, a method of changing a process route is generally adopted at present, for example, wet stripping is used instead of gold tearing stripping, but the processing cost is increased, and the production efficiency is reduced. In addition, electrostatic discharge induced by plasma in the etching process cannot be completely avoided, and charge is accumulated on the surface of the device to cause damage to the device.
Therefore, how to solve the above technical problems should be of great interest to those skilled in the art.
Disclosure of Invention
The invention aims to provide a HEMT device and a preparation method thereof, which are used for preventing the device from being damaged due to charge aggregation in the preparation process.
In order to solve the technical problems, the present invention provides a HEMT device, including:
a substrate;
an epitaxial structure layer arranged on the surface of the substrate;
the source electrode, the drain electrode and the grid electrode are arranged on the surface of the epitaxial structure layer, which is away from the substrate; the source electrode is electrically connected with a scribing channel around the HEMT device.
Optionally, the method further comprises:
a guard ring disposed between the source electrode and the scribe line;
the source electrode is electrically connected with the protection ring, and the protection ring is electrically connected with the scribing channel.
Optionally, the source electrode and the scribe line are directly electrically connected through a conductive path.
Optionally, the regions of the epitaxial structure layer corresponding to the drain electrode and the source electrode are ion implantation conductive regions, the regions of the epitaxial structure layer except the regions corresponding to the scribe line, the active region and the first connection region are insulating regions, and the source electrode and the scribe line are electrically connected through two-dimensional electron gas corresponding to the first connection region; the first connection region is a region connecting the source electrode and the scribe line.
Optionally, the ion implantation conductive region further includes a region corresponding to the scribe line in the epitaxial structure layer.
Optionally, when the scribe line does not allow the metal to exist, the method further comprises a scribe line protrusion connected with the scribe line; the regions of the epitaxial structure layer corresponding to the scribing channel, the scribing channel bulge, the drain electrode and the source electrode are ion implantation conductive regions, and the regions of the epitaxial structure layer except the regions corresponding to the scribing channel, the scribing channel bulge and the active region are insulating regions; the source electrode and the scribe line protrusion are electrically connected through a metal layer.
Optionally, when the scribe line does not allow the metal to exist, the method further comprises a scribe line protrusion connected with the scribe line; the regions of the epitaxial structure layer corresponding to the local region of the scribing channel, the scribing channel bulge, the drain electrode and the source electrode are ion implantation conductive regions, and the regions of the epitaxial structure layer except the regions corresponding to the scribing channel, the scribing channel bulge and the active region are insulating regions; the source electrode is electrically connected with the scribing channel bulge through a metal layer; the local area of the scribe line includes an area connected with the scribe line protrusion.
Optionally, the region of the epitaxial structure layer corresponding to the scribe line is an ion implantation conductive region, and the regions of the epitaxial structure layer except for the scribe line, the guard ring, the active region, the second connection region and the third connection region are insulation regions;
the source electrode is electrically connected with the protection ring, and the protection ring is electrically connected with the scribing channel through two-dimensional electron gas corresponding to the third connecting area; the second connection region is a region connecting the source electrode and the guard ring, and the third connection region is a region connecting the guard ring and the scribe line.
Optionally, the regions of the epitaxial structure layer except the scribe line, the guard ring, the active region, the second connection region and the third connection region are insulation regions;
the source electrode is electrically connected with the protection ring, and the protection ring is electrically connected with the scribing channel through a metal layer positioned in the third connection area.
Optionally, the connection between the metal layer and the guard ring and the connection between the metal layer and the scribe line are ohmic contact or schottky contact.
Optionally, the region of the epitaxial structure layer corresponding to the scribe line is an ion implantation conductive region.
Optionally, a region of the epitaxial structure layer corresponding to the scribe line is an ion-free region.
Optionally, when the scribe line does not allow the metal to exist, the method further comprises a scribe line protrusion connected with the scribe line; the local area of the epitaxial structure layer corresponding to the scribing channel and the raised area of the scribing channel are ion implantation conductive areas; the local area of the scribe line includes an area connected with the scribe line protrusion.
Optionally, the region of the epitaxial structure layer corresponding to the scribe line and the third connection region are ion implantation conductive regions, and the region of the epitaxial structure layer except for the region corresponding to the scribe line, the guard ring, the active region, the second connection region and the third connection region is an insulating region; the source electrode is electrically connected with the protection ring, and the protection ring is electrically connected with the scribing channel through implanted ions corresponding to the third connection area.
The invention also provides a preparation method of the HEMT device, which comprises the following steps:
preparing a substrate;
growing an epitaxial structure layer on the surface of the substrate;
manufacturing a source electrode, a drain electrode and a grid electrode on the surface of the epitaxial structure layer;
the source electrode is electrically connected with a scribing channel around the HEMT device.
Optionally, when the source electrode and the scribe line are electrically connected through two-dimensional electrons corresponding to the first connection region, before the source electrode, the drain electrode and the gate electrode are fabricated on the surface of the epitaxial structure layer, the method further includes:
growing a protective layer on the surface of the epitaxial structure layer;
under the action of the protective layer, implanting ions into the areas of the epitaxial structure layer corresponding to the scribing channel, the drain electrode and the source electrode and activating the areas, so that the areas implanted with ions are ion implantation conductive areas;
removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer;
injecting isolation ions into the epitaxial structure layer except for the areas corresponding to the scribing channel, the active area and the first connecting area, so that the area where the isolation ions are injected is an insulating area;
the first connection region is a region connecting the source electrode and the scribe line, and a region of the epitaxial structure layer, into which isolation ions are not injected, has two-dimensional electron gas.
Optionally, when the scribe line does not allow metal to exist, and the source electrode and the scribe line protrusion are electrically connected through a metal layer, implanting ions into regions of the epitaxial structure layer corresponding to the scribe line, the drain electrode, and the source electrode and activating the regions includes:
under the action of the protective layer, implanting ions into the areas corresponding to the scribing channel, the scribing channel bulge, the drain electrode and the source electrode in the epitaxial structure layer and activating the areas;
implanting isolation ions into the epitaxial structure layer except for the region corresponding to the scribing channel, the active region and the first connection region comprises the following steps:
implanting isolation ions into the epitaxial structure layer except for the regions corresponding to the scribing channel, the scribing channel bulge and the active region;
when the source electrode, the drain electrode and the grid electrode are manufactured on the surface of the epitaxial structure layer, the method further comprises the following steps:
a metal layer is grown between the source electrode and the scribe line protrusion.
Optionally, before the source, the drain and the gate are fabricated on the surface of the epitaxial structure layer, the method further includes:
growing a protective layer on the surface of the epitaxial structure layer;
under the action of the protective layer, implanting ions into the epitaxial structure layer in the area corresponding to the scribing channel and activating the area, so that the ion implanted area is an ion implanted conductive area;
removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer;
injecting isolation ions into the epitaxial structure layer except for the areas corresponding to the scribing channel, the protection ring, the active area, the second connection area and the third connection area, so that the area injected with the isolation ions is an insulating area;
manufacturing a protection ring on the surface of the epitaxial structure layer;
the second connection region is a region connecting the source electrode and the guard ring, and the third connection region is a region connecting the guard ring and the scribe line.
The HEMT device provided by the invention comprises: a substrate; an epitaxial structure layer arranged on the surface of the substrate; the source electrode, the drain electrode and the grid electrode are arranged on the surface of the epitaxial structure layer, which is away from the substrate; the source electrode is electrically connected with a scribing channel around the HEMT device.
It can be seen that the HEMT device of the present invention includes a substrate, an epitaxial structure layer, a source, a drain, and a gate, where the source is electrically connected to scribe lanes around the HEMT device. Static electricity generated in the process of preparing the HEMT device can be transmitted to the surface of the whole wafer through an electric connection channel between the source electrode and the scribing channel, so that the static electricity is uniformly distributed on the whole wafer, the situation that an electrostatic electric field is overlarge on a single HEMT device is avoided, and damage to the HEMT device caused by charge aggregation is avoided.
In addition, the invention also provides a preparation method with the advantages.
Drawings
For a clearer description of embodiments of the invention or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional view of a HEMT device according to an embodiment of the present invention;
fig. 2 is a top view first of a HEMT device according to an embodiment of the present invention under different manufacturing processes;
fig. 3 is a second top view of the HEMT device according to the embodiment of the present invention under different manufacturing processes;
fig. 4 is a schematic diagram of an ion implantation conductive region in a HEMT device according to an embodiment of the present invention;
fig. 5 is a schematic diagram of an insulation region of a HEMT device according to an embodiment of the present invention;
fig. 6 is a schematic diagram II of an ion implantation conductive region in a HEMT device according to an embodiment of the present invention;
fig. 7 is a schematic diagram two of an insulation region of a HEMT device according to an embodiment of the present invention;
fig. 8 is a schematic diagram illustrating connection between a source and a scribe line in a HEMT device according to an embodiment of the present invention;
fig. 9 is a schematic diagram III of an ion implantation conductive region in a HEMT device according to an embodiment of the present invention;
fig. 10 is a schematic diagram III of an insulation region of a HEMT device according to an embodiment of the present invention;
fig. 11 is a schematic diagram fourth of an insulation region of a HEMT device provided in an embodiment of the application;
fig. 12 is a schematic cross-sectional view of a HEMT device according to an embodiment of the present invention;
fig. 13 is a flowchart of a method for manufacturing a HEMT device according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of a HEMT device according to an embodiment of the present invention after an epitaxial structure layer is grown during a process for manufacturing the HEMT device;
fig. 15 is a schematic structural diagram of a HEMT device according to an embodiment of the present invention after a protective layer is grown during a process for manufacturing the HEMT device;
fig. 16 is a top view of a HEMT device according to an embodiment of the present invention;
in the figure, 1, a substrate, 2, an epitaxial structure layer, 3, a scribe line, 4, a drain electrode, 5, a source electrode, 6, a gate electrode, 7, two-dimensional electron gas, 8, a drain electrode pad, 9, a source electrode pad, 10, a chip functional region, 11, a first passivation layer, 12, a gate electrode pad, 13, an active region, 14, a first connection region, 15, a scribe line protrusion, 16, a metal layer, 17, a guard ring, 18, a second connection region, 19, a third connection region, 20, a cap layer, 21, a GaN layer, 22, an AlGaN layer, 23 and a protection layer are illustrated.
Detailed Description
In order to better understand the aspects of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, static electricity is inevitably introduced in the process of manufacturing the HEMT device at present, and the charge is accumulated on a single device to generate point discharge, so that the device is damaged.
In view of this, the present invention provides a HEMT device, please refer to fig. 1 to 11, comprising:
a substrate 1;
an epitaxial structure layer 2 arranged on the surface of the substrate 1;
the source electrode 5, the drain electrode 4 and the grid electrode 6 are arranged on the surface of the epitaxial structure layer 2, which is away from the substrate 1; the source electrode 5 is electrically connected with the scribing channel 3 around the HEMT device.
The substrate 1 includes, but is not limited to, a SiC substrate, a Si substrate, and a sapphire substrate.
The epitaxial structure layer 2 may be a GaN/AlGaN laminated structure, a GaN/AlN/AlGaN/GaN laminated structure, or the like, and is not particularly limited in the present invention.
The HEMT device may further include: the first passivation layer 11 is arranged on the surface of the epitaxial structure layer 2, which is away from the substrate 1, and the first passivation layer 11 can be a silicon nitride layer; and a second passivation layer on the upper surface of the HEMT device, wherein the second passivation layer may be SiN, or PI (Polyimide) glue, or a stack of SiN and PI glue. The first passivation layer 11 is located at the periphery of the chip functional region 10.
The source 5, drain 4 and gate 6 are all metal. The ohmic contact is formed between the drain electrode 4 and the source electrode 5 and the epitaxial structure layer 2, and the drain electrode 4 and the source electrode 5 are not limited in the present invention, and may be, for example, ti/Al/Ni/Au, ti/Al/Ti, or Ti/Pt/Au/Ti, etc. The gate electrode 6 and the epitaxial structure layer 2 form schottky contact, for example, the gate electrode 6 may be Ni/Au, ni/Pb/Au, or the like.
The drain electrode 4 is led out by the drain electrode bonding pad 8, the grid electrode 6 is led out by the grid electrode bonding pad 12, the drain electrode bonding pad 8 and the grid electrode bonding pad 12 are both positioned on the front surface of the HEMT device, the source electrode 5 is led out by the source electrode bonding pad 9 positioned on the back surface of the HEMT device and grounded, wherein the source electrode bonding pad 9 is distributed on the back surface of the HEMT device, and the back surface of the HEMT device is provided with an opening and is connected with the source electrode bonding pad 9 on the front surface through metal, as shown in figures 1, 2 and 3.
The epitaxial structure layer 2 is shown in fig. 1 as a GaN/AlGaN stack structure, and it should be noted that the openings on the back surface of the HEMT device penetrate through the substrate 1 and the epitaxial structure layer 2 to connect with the source 5. In the figure, the source electrode of the active region is connected with the expression opening, and finally the connection with the two-dimensional electron gas is realized, and the opening is not shown to completely penetrate through the epitaxial structure layer 2.
In the present invention, the electrical connection between the source electrode 5 and the scribe line 3 is not limited, and may be set by itself.
As an embodiment, the source 5 and the scribe line 3 are directly electrically connected through a conductive path. Various embodiments are described below.
Example 1
The regions of the epitaxial structure layer 2 corresponding to the scribe line 3, the drain electrode 4 and the source electrode 5 are ion implantation conductive regions, and the regions of the epitaxial structure layer 2 except for the scribe line 3, the active region 13 and the first connection region 14 are insulating regions; the source electrode 5 is electrically connected with the scribe line 3 through the two-dimensional electron gas 7 corresponding to the first connection region 14; the first connection region 14 is a region connecting the source electrode 5 and the scribe line 3.
Referring to fig. 4, the ion implantation conductive regions in the epitaxial structure layer 2 are correspondingly located below the drain electrode 4, the source electrode 5 and the scribe line 3, and the ion implantation conductive regions may be implanted with silicon ions. Referring to fig. 5, the insulating region in the epitaxial structure layer 2 is a region except for the corresponding scribe line 3, the active region 13 and the first connection region 14, and nitrogen ions are injected into the insulating region, so that the two-dimensional electron gas 7 is broken, and the two-dimensional electron gas 7 remains in the region except for the insulating region in the epitaxial structure layer 2. The active region 13 includes a region where the drain electrode 4 and the source electrode 5 are located. The first connection region 14 is located in the region between the source 5 and the scribe lane 3.
Example 2
The regions of the epitaxial structure layer 2 corresponding to the drain electrode 4 and the source electrode 5 are ion implantation conductive regions, the regions of the epitaxial structure layer 2 except for the scribe line 3, the active region 13 and the first connection region 14 are insulating regions, and the source electrode 5 and the scribe line 3 are electrically connected through the two-dimensional electron gas 7 corresponding to the first connection region 14; the first connection region 14 is a region connecting the source electrode 5 and the scribe line 3.
Referring to fig. 6, the ion implantation conductive regions in the epitaxial structure layer 2 are correspondingly located below the drain electrode 4 and the source electrode 5, and the ion implantation conductive regions may be implanted with silicon ions. The insulating region in the epitaxial structure layer 2 is the same as in example 1 above, and the scribe line 3 region also retains the two-dimensional electron gas 7.
Example 3
When the scribe line 3 does not allow the presence of metal, the scribe line protrusion 15 connected to the scribe line 3 is further included; the regions of the epitaxial structure layer 2 corresponding to the scribe line 3, the scribe line protrusion 15, the drain electrode 4 and the source electrode 5 are ion implantation conductive regions, and the regions of the epitaxial structure layer 2 except the regions corresponding to the scribe line 3, the scribe line protrusion 15 and the active region 13 are insulating regions; the source electrode 5 and the scribe line protrusion 15 are electrically connected through a metal layer 16.
In this embodiment, the source electrode 5 is electrically connected with the scribe line protrusion 15 through the metal layer 16, and since the scribe line 3 needs to be scribed, the scribe line protrusion 15 needs to be provided for a wafer where no metal is allowed to exist in the scribe line, so that the metal layer 16 is prevented from being present on the scribe line, and the effect on the scribe is avoided. For a wafer where the scribe line allows the presence of metal, the scribe line protrusion may not be provided, i.e., the metal layer may be on the scribe line.
Referring to fig. 6, the ion implantation conductive region in the epitaxial structure layer 2 is correspondingly located below the drain electrode 4, the source electrode 5, the scribe line protrusion 15 and the entire scribe line 3, and the ion implantation conductive region may be implanted with silicon ions. Referring to fig. 7, the insulating region in the epitaxial structure layer 2 is a region except for the region corresponding to the whole scribe line 3, the scribe line protrusion 15 and the active region 13, and nitrogen ions are injected into the insulating region, so that the two-dimensional electron gas 7 is destroyed, the two-dimensional electron gas 7 in the region except for the insulating region remains, and the scribe line 3 region remains conductive.
Referring to fig. 8, a metal layer 16 is deposited between the source electrode 5 and the scribe line protrusions 15, and annealed to form ohmic contacts, the source electrode 5 and the scribe line 3 being connected by metal. The metal layer 16 may be formed together with the metal of the drain electrode 4 and the source electrode 5.
Example 4
When the scribe line 3 does not allow the presence of metal, the scribe line protrusion 15 connected to the scribe line 3 is further included; the regions of the epitaxial structure layer 2 corresponding to the local region of the scribe line 3, the scribe line protrusion 15, the drain electrode 4 and the source electrode 5 are ion implantation conductive regions, and the regions of the epitaxial structure layer 2 except for the regions corresponding to the scribe line 3, the scribe line protrusion 15 and the active region 13 are insulating regions; the source electrode 5 is electrically connected with the scribe line protrusion 15 through a metal layer 16; the partial region of the scribe lane 3 includes a region connected with the scribe lane protrusion 15.
Referring to fig. 9, the ion implantation conductive region in the epitaxial structure layer 2 is correspondingly located below the drain electrode 4, the source electrode 5, the scribe line protrusion 15, and the local area of the scribe line 3, and the ion implantation conductive region may be implanted with silicon ions. The partial region of the scribe lane 3 may be a region of the scribe lane 3 connected to the scribe lane protrusion 15, which is equal to the length of the scribe lane protrusion 15, as shown by a broken line box a in fig. 9, or the partial region of the scribe lane 3 may be slightly larger, and the region connected to the scribe lane protrusion 15 may be further enlarged to both sides, as shown by a broken line box B in fig. 9.
Reference is made to the above example 3 for the region of the insulation region, and detailed description thereof is omitted here. A schematic diagram of the metal layer 16 connecting the source electrode 5 and the scribe line bump 15 is shown in fig. 8.
As another embodiment, the HEMT device may further include:
a guard ring 17 provided between the source electrode 5 and the scribe line 3;
wherein the source electrode 5 is electrically connected to the guard ring 17, and the guard ring 17 is electrically connected to the scribe line 3. Various embodiments are described below.
Example 5
The region of the epitaxial structure layer 2 corresponding to the scribe line 3 is an ion implantation conductive region, and the regions of the epitaxial structure layer 2 except for the scribe line 3, the guard ring 17, the active region 13, the second connection region 18 and the third connection region 19 are insulating regions;
the source electrode 5 is electrically connected with the guard ring 17 through the two-dimensional electron gas 7 corresponding to the second connection region 18, and the guard ring 17 is electrically connected with the scribe line 3 through the two-dimensional electron gas 7 corresponding to the third connection region 19; the second connection region 18 is a region connecting the source electrode 5 and the guard ring 17, and the third connection region 19 is a region connecting the guard ring 17 and the scribe line 3.
The guard ring 17 is a metal ring, and is in ohmic contact or schottky contact with the epitaxial structure layer 2.
Referring to fig. 10, the insulating region in the epitaxial structure layer 2 is a region except for the corresponding scribe line 3, guard ring 17 (guard ring), active region 13, second connection region 18 and third connection region 19, the second connection region 18 is located between the source electrode 5 and the guard ring 17, the third connection region 19 is located between the guard ring 17 and the scribe line 3, and nitrogen ions are implanted into the insulating region, so that the two-dimensional electron gas 7 is broken. The two-dimensional electron gas 7 remains intact in the epitaxial structure layer 2 except for the insulating region.
Silicon ions are implanted into the epitaxial structure layer 2 in the area corresponding to the scribing channel 3, so that an ion implantation conductive area is formed.
In this embodiment, the source electrode 5 is electrically connected to the guard ring 17, and the guard ring 17 is electrically connected to the scribe line 3 through the two-dimensional electron gas 7 corresponding to the third connection region 19, as shown in fig. 11.
The source electrode 5 and the guard ring 17 may be electrically connected through the two-dimensional electron gas 7 corresponding to the second connection region 18, or through a metal layer located in the second connection region 18, or through implanted ions corresponding to the second connection region 18, and the implanted ions may be silicon ions.
It should be noted that the third connection region 19 may be located at any position between the guard ring 17 and the scribe lane 3. For example, as shown in fig. 10 and 12.
Example 6
The epitaxial structure layer 2 is an insulating region except for the scribe line 3, the guard ring 17, the active region 13, the second connection region 18, and the third connection region 19;
the source electrode 5 is electrically connected to the guard ring 17, and the guard ring 17 is electrically connected to the scribe line 3 through the metal layer 16 located in the third connection region 19.
The positions of the insulating regions in this embodiment are the same as those in embodiment 5, and reference is made to the above description, and detailed description thereof will be omitted.
The source electrode 5 and the guard ring 17 may be electrically connected through the two-dimensional electron gas 7 corresponding to the second connection region 18, or through a metal layer located in the second connection region 18, or through implanted ions corresponding to the second connection region 18, and the implanted ions may be silicon ions.
In this embodiment, the scribe line 3 and the guard ring 17 are electrically connected through the metal layer 16, and the junction between the metal layer 16 and the guard ring 17 and the junction between the metal layer 16 and the scribe line 3 are in ohmic contact or schottky contact.
When the guard ring 17 is connected to the scribe line 3 through metal, as a specific embodiment, the region of the epitaxial structure layer 2 corresponding to the scribe line 3 is a non-implanted ion region, that is, a region of the epitaxial structure layer 2 corresponding to the scribe line 3 is not implanted with conductive ions (silicon ions), but the present invention is not limited thereto, and as another specific embodiment, the region of the epitaxial structure layer 2 corresponding to the scribe line 3 is an ion implanted conductive region, that is, a region corresponding to the scribe line 3 is implanted with conductive ions (silicon ions).
Example 7
When the scribe line 3 does not allow the presence of metal, the scribe line protrusion 15 connected to the scribe line 3 is further included; the local area of the epitaxial structure layer 2 corresponding to the scribing channel 3 and the area of the scribing channel bulge 15 are ion implantation conductive areas; the partial region of the scribe lane 3 includes a region connected with the scribe lane protrusion 15.
The third connection region 19 is located between the guard ring 17 and the scribe line 3, and the guard ring 17 and the scribe line bump 15 are electrically connected by the metal layer 16.
The regions of the epitaxial structure layer 2 other than the partial region corresponding to the scribe line 3, the scribe line protrusion 15, the guard ring 17, the active region 13, the second connection region 18, and the third connection region 19 are insulating regions.
Example 8
The region of the epitaxial structure layer 2 corresponding to the scribe line 3 and the third connection region 19 are ion implantation conductive regions, and the regions of the epitaxial structure layer 2 except for the region corresponding to the scribe line 3, the guard ring 17, the active region 13, the second connection region 18 and the third connection region 19 are insulating regions; the source electrode 5 is electrically connected to the guard ring 17, and the guard ring 17 is electrically connected to the scribe line 3 through implanted ions corresponding to the third connection region 19.
The ions implanted in the ion implantation conductive region may be silicon ions, the ions implanted in the insulating region may be nitrogen ions, and the two-dimensional electron gas 7 remains in the region of the epitaxial structure layer 2 other than the insulating region.
The source electrode 5 and the guard ring 17 may be electrically connected through the two-dimensional electron gas 7 corresponding to the second connection region 18, or through a metal layer located in the second connection region 18, or through implanted ions corresponding to the second connection region 18, and the implanted ions may be silicon ions.
The HEMT device comprises a substrate 1, an epitaxial structure layer 2, a source electrode 5, a drain electrode 4 and a grid electrode 6, wherein the source electrode 5 is electrically connected with a scribing channel 3 around the HEMT device. Static electricity generated in the process of preparing the HEMT device can be transmitted to the surface of the whole wafer through an electric connection channel between the source electrode 5 and the scribing channel 3, so that the static electricity is uniformly distributed on the whole wafer, the situation that an electrostatic electric field is overlarge on a single HEMT device is avoided, and damage to the HEMT device caused by charge aggregation is avoided.
In summary, the HEMT device of the present invention has the following advantages:
firstly, reserving two-dimensional electron gas in a scribing channel region or performing Si ion implantation activation in the scribing channel region to form a conductive channel, and connecting the scribing channel with a source electrode through the two-dimensional electron gas or the Si implantation activation region or metal to prevent ESD (electrostatic discharge) caused by charge accumulation on the surface of the device and improve the ESD protection of the device in a chip manufacturing process;
second, dicing streets cut after the end of the chip manufacturing process, and do not affect the device.
The invention also provides a preparation method of the HEMT device, which comprises the following steps:
preparing a substrate;
growing an epitaxial structure layer on the surface of the substrate;
manufacturing a source electrode, a drain electrode and a grid electrode on the surface of the epitaxial structure layer;
the source electrode is electrically connected with a scribing channel around the HEMT device.
The epitaxial structure layer growth method can use MOCVD (Metal-organic Chemical Vapor Deposition, metal organic chemical vapor deposition) or MBE (Molecular Beam Epitaxy ); two-dimensional electron gas is generated under the action of piezoelectric polarization and spontaneous excitation.
The preparation is described in the following in the examples.
Referring to fig. 13, the preparation method of the hemt device includes:
step S101: a substrate is prepared.
Step S102: an epitaxial structure layer is grown on a surface of the substrate.
Referring to fig. 14, the epitaxial structure layer is located on the surface of the substrate, wherein the epitaxial structure layer is shown as a GaN/AlGaN laminated structure, the GaN layer 21 is located on the upper surface of the substrate 1, the AlGaN layer 22 is located on the upper surface of the GaN layer 21, and the GaN layer 21 and the AlGaN layer 22 form a heterojunction. Furthermore, a cap layer may be formed on the upper surface of the epitaxial structure layer, and the cap layer may be a GaN layer.
Step S103: and growing a protective layer on the surface of the epitaxial structure layer.
Referring to fig. 15, the protection layer 23 is located on the upper surface of the cap layer 20.
The protective layer can be a silicon nitride layer, so that the epitaxial structure layer is prevented from being damaged in the ion implantation process, and meanwhile, implantation is more uniform. The protective layer may be grown by low pressure chemical vapor deposition (low pressure chemical vapor deposition, LPCVD).
Step S104: under the action of the protective layer, ions are implanted into the areas of the epitaxial structure layer corresponding to the scribing channel, the drain electrode and the source electrode and activated, so that the areas implanted with the ions are ion implantation conductive areas.
The region of ion implantation is shown in fig. 4, the ion implantation can be silicon ion, high temperature activation is adopted for activation, silicon ion doping is formed, and the activation temperature can be 1000-1150 ℃. The epitaxial structure layer forms a silicon ion implantation region conductive channel corresponding to the scribing channel region.
Step S105: and removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer.
The dielectric layer may be a silicon nitride layer and the growth may be a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD).
Step S106: injecting isolation ions into the epitaxial structure layer except for the areas corresponding to the scribing channel, the active area and the first connecting area, so that the area where the isolation ions are injected is an insulating area;
the first connection region is a region connecting the source electrode and the scribe line, and a region of the epitaxial structure layer, into which isolation ions are not injected, has two-dimensional electron gas.
The isolation ions can be nitrogen ions, the two-dimensional electron gas in the injection region is broken down to form an insulation region, and the two-dimensional electron gas is reserved for the region in which the nitrogen ions are injected.
The implantation region of the isolated ions is shown in fig. 5.
Step S107: and etching the passivation layer, evaporating metal in the etching area, and annealing to enable the metal and the epitaxial structure layer to react in an alloy way to form ohmic metal, so as to obtain the source electrode and the drain electrode.
The passivation layer etching area is an area where a source electrode and a drain electrode need to be manufactured, the metal evaporation mode can be electron beam evaporation, and the scribing channel area does not evaporate metal.
Step S108: and etching the passivation layer, evaporating metal in the etching area, and annealing to form a grid electrode with Schottky contact.
As shown in fig. 3, the gate is located between the source and drain.
Step S109: and growing a first passivation layer on the surface of the dielectric layer.
The first passivation layer may be grown by PECVD, and the first passivation layer may be a silicon nitride layer.
Step S110: and etching the first passivation layer, evaporating metal, and electroplating for thickening to form a drain electrode bonding pad and a gate electrode bonding pad.
The drain pad is electrically connected with the drain electrode, and the gate pad is electrically connected with the gate electrode.
Step S111: and growing a second passivation layer on the surface of the current HEMT device.
The second passivation layer may be SiN, or PI (Polyimide) glue, or a stack of SiN and PI glue.
Step S112: and opening the area of the second passivation layer corresponding to the drain electrode pad and the grid electrode pad so as to be used for package bonding later.
Step S113: etching the back of the HEMT device to form an opening, and preparing metal on the back, the side wall and the bottom of the opening to realize source grounding.
The schematic cross-sectional view of the HEMT device obtained in this embodiment is shown in fig. 1, and the top view is shown in fig. 16.
The specific preparation processes of steps S101 to S103 and steps S107 to S113 may refer to the related art.
On the basis of the above embodiment, in one embodiment of the present invention, when the scribe line of the HEMT device is provided with the scribe line protrusion, and the scribe line protrusion is electrically connected with the source electrode through the metal layer, before the source electrode, the drain electrode and the gate electrode are fabricated on the surface of the epitaxial structure layer, the method further includes:
growing a protective layer on the surface of the epitaxial structure layer;
under the action of the protective layer, implanting ions into and activating the areas corresponding to the scribing channel, the scribing channel bulge, the drain electrode and the source electrode in the epitaxial structure layer, so that the areas implanted with ions are ion implantation conductive areas;
removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer;
injecting isolation ions into the epitaxial structure layer except for the areas corresponding to the scribing channel, the scribing channel bulge and the active area, so that the area where the isolation ions are injected is an insulating area;
when the source electrode, the drain electrode and the grid electrode are manufactured on the surface of the epitaxial structure layer, the method further comprises the following steps:
a metal layer is grown between the source electrode and the scribe line protrusion. Wherein the metal layer is grown together in the connection region between the source and scribe line bumps using source-drain ohmic metal or gate metal.
When the HEMT device comprises a protection ring, the source electrode is electrically connected with the protection ring through two-dimensional electron gas corresponding to the second connecting area, and the protection ring is electrically connected with the scribing channel through two-dimensional electron gas corresponding to the third connecting area, the preparation method of the HEMT device comprises the following steps:
step S201: a substrate is prepared.
Step S202: an epitaxial structure layer is grown on a surface of the substrate.
Step S203: and growing a protective layer on the surface of the epitaxial structure layer.
Step S204: and under the action of the protective layer, implanting ions into the region of the epitaxial structure layer corresponding to the scribing channel and activating the region, so that the region implanted with ions is an ion implantation conductive region.
Step S205: and removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer.
Step S206: and implanting isolation ions into the epitaxial structure layer except for the regions corresponding to the scribing channel, the protection ring, the active region, the second connection region and the third connection region, so that the region implanted with the isolation ions is an insulating region.
The second connection region is a region connecting the source electrode and the guard ring, and the third connection region is a region connecting the guard ring and the scribe line.
Step S207: and etching the passivation layer, evaporating metal in the etching area, and annealing to enable the metal and the epitaxial structure layer to react in an alloy way to form ohmic metal, so as to obtain the source electrode and the drain electrode.
Step S208: and etching the passivation layer, evaporating metal in the etching area, and annealing to form a grid electrode and a protection ring of the Schottky contact.
The subsequent manufacturing process refers to the above steps S109 to S113, and will not be described in detail here.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other.
The HEMT device and the preparation method thereof provided by the invention are described in detail. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Claims (18)
1. A HEMT device, comprising:
a substrate (1);
an epitaxial structure layer (2) arranged on the surface of the substrate (1);
the source electrode (5), the drain electrode (4) and the grid electrode (6) are arranged on the surface of the epitaxial structure layer (2) away from the substrate (1); the source electrode (5) is electrically connected with the scribing channel (3) around the HEMT device.
2. The HEMT device of claim 1, further comprising:
a guard ring (17) provided between the source electrode (5) and the scribe line (3);
wherein the source electrode (5) is electrically connected with the guard ring (17), and the guard ring (17) is electrically connected with the scribe line (3).
3. The HEMT device of claim 1, wherein the source electrode (5) and the scribe line (3) are electrically connected directly through a conductive channel.
4. The HEMT device according to claim 3, wherein the regions of the epitaxial structure layer (2) corresponding to the drain electrode (4) and the source electrode (5) are ion implantation conductive regions, the regions of the epitaxial structure layer (2) other than the scribe line (3), the active region (13) and the first connection region (14) are insulating regions, and the source electrode (5) and the scribe line (3) are electrically connected by two-dimensional electron gas (7) corresponding to the first connection region (14); the first connection region (14) is a region connecting the source electrode (5) and the scribe line (3).
5. The HEMT device of claim 4, wherein the ion-implanted conductive region further comprises a region of the epitaxial structural layer (2) corresponding to the scribe lane (3).
6. A HEMT device according to claim 3, characterized in that when the scribe line (3) does not allow the presence of metal, it further comprises a scribe line protrusion (15) connected to the scribe line (3);
the regions of the epitaxial structure layer (2) corresponding to the scribing channel (3), the scribing channel bulge (15), the drain electrode (4) and the source electrode (5) are ion implantation conductive regions, and the regions of the epitaxial structure layer (2) except for the regions corresponding to the scribing channel (3), the scribing channel bulge (15) and the active region (13) are insulating regions; the source electrode (5) and the scribing channel protrusion (15) are electrically connected through a metal layer (16).
7. A HEMT device according to claim 3, characterized in that when the scribe line (3) does not allow the presence of metal, it further comprises a scribe line protrusion (15) connected to the scribe line (3);
the regions of the epitaxial structure layer (2) corresponding to the local region of the scribing channel (3), the scribing channel bulge (15), the drain electrode (4) and the source electrode (5) are ion implantation conductive regions, and the regions of the epitaxial structure layer (2) except for the regions corresponding to the scribing channel (3), the scribing channel bulge (15) and the active region (13) are insulating regions; the source electrode (5) is electrically connected with the scribing channel bulge (15) through a metal layer (16); the partial region of the scribe line (3) includes a region connected to the scribe line protrusion (15).
8. The HEMT device according to claim 2, wherein the region of the epitaxial structure layer (2) corresponding to the scribe line (3) is an ion implantation conductive region, and the regions of the epitaxial structure layer (2) other than the region corresponding to the scribe line (3), the guard ring (17), the active region (13), the second connection region (18), and the third connection region (19) are insulating regions;
the source electrode (5) is electrically connected with the protection ring (17), and the protection ring (17) is electrically connected with the scribing channel (3) through a two-dimensional electron gas (7) corresponding to the third connecting area (19); the second connection region (18) is a region connecting the source electrode (5) and the guard ring (17), and the third connection region (19) is a region connecting the guard ring (17) and the scribe line (3).
9. The HEMT device of claim 2, wherein regions of the epitaxial structure layer (2) other than regions corresponding to the scribe line (3), the guard ring (17), the active region (13), the second connection region (18), and the third connection region (19) are insulating regions;
the source electrode (5) is electrically connected with the protection ring (17), and the protection ring (17) is electrically connected with the scribing channel (3) through a metal layer (16) positioned in a third connection region (19).
10. The HEMT device of claim 9, wherein the junction of the metal layer (16) and the guard ring (17) and the junction of the metal layer (16) and the scribe line (3) are ohmic or schottky contacts.
11. The HEMT device of claim 9, wherein the region of the epitaxial structure layer (2) corresponding to the scribe line (3) is an ion implanted conductive region.
12. The HEMT device of claim 9, wherein the region of the epitaxial structure layer (2) corresponding to the scribe line (3) is a non-implanted ion region.
13. The HEMT device of claim 9, further comprising a scribe line bump (15) connected to the scribe line (3) when the scribe line (3) does not allow the presence of metal;
the local area of the epitaxial structure layer (2) corresponding to the scribing channel (3) and the area of the scribing channel bulge (15) are ion implantation conductive areas; the partial region of the scribe line (3) includes a region connected to the scribe line protrusion (15).
14. The HEMT device according to claim 2, wherein the region of the epitaxial structure layer (2) corresponding to the scribe line (3) and the third connection region (19) are ion implantation conductive regions, and the regions of the epitaxial structure layer (2) other than the region corresponding to the scribe line (3), the guard ring (17), the active region (13), the second connection region (18) and the third connection region (19) are insulating regions; the source electrode (5) is electrically connected with the protection ring (17), and the protection ring (17) is electrically connected with the scribing channel (3) through implantation ions corresponding to the third connection region (19).
15. The preparation method of the HEMT device is characterized by comprising the following steps:
preparing a substrate;
growing an epitaxial structure layer on the surface of the substrate;
manufacturing a source electrode, a drain electrode and a grid electrode on the surface of the epitaxial structure layer;
the source electrode is electrically connected with a scribing channel around the HEMT device.
16. The method of manufacturing a HEMT device of claim 15, wherein when the source electrode is electrically connected to the scribe line by two-dimensional electrons corresponding to the first connection region, before the source electrode, the drain electrode, and the gate electrode are fabricated on the surface of the epitaxial structure layer, further comprising:
growing a protective layer on the surface of the epitaxial structure layer;
under the action of the protective layer, implanting ions into the areas of the epitaxial structure layer corresponding to the scribing channel, the drain electrode and the source electrode and activating the areas, so that the areas implanted with ions are ion implantation conductive areas;
removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer;
injecting isolation ions into the epitaxial structure layer except for the areas corresponding to the scribing channel, the active area and the first connecting area, so that the area where the isolation ions are injected is an insulating area;
the first connection region is a region connecting the source electrode and the scribe line, and a region of the epitaxial structure layer, into which isolation ions are not injected, has two-dimensional electron gas.
17. The method of manufacturing a HEMT device of claim 16, wherein implanting ions into and activating regions of the epitaxial structure layer corresponding to the scribe line, the drain electrode, and the source electrode when the scribe line does not allow metal to be present and the source electrode is electrically connected to the scribe line bump by a metal layer comprises:
under the action of the protective layer, implanting ions into the areas corresponding to the scribing channel, the scribing channel bulge, the drain electrode and the source electrode in the epitaxial structure layer and activating the areas;
implanting isolation ions into the epitaxial structure layer except for the region corresponding to the scribing channel, the active region and the first connection region comprises the following steps:
implanting isolation ions into the epitaxial structure layer except for the regions corresponding to the scribing channel, the scribing channel bulge and the active region;
when the source electrode, the drain electrode and the grid electrode are manufactured on the surface of the epitaxial structure layer, the method further comprises the following steps:
a metal layer is grown between the source electrode and the scribe line protrusion.
18. The method of manufacturing a HEMT device of claim 15, further comprising, prior to fabricating the source, drain and gate electrodes on the surface of the epitaxial structure layer:
growing a protective layer on the surface of the epitaxial structure layer;
under the action of the protective layer, implanting ions into the epitaxial structure layer in the area corresponding to the scribing channel and activating the area, so that the ion implanted area is an ion implanted conductive area;
removing the protective layer and growing a dielectric layer on the surface of the epitaxial structure layer;
injecting isolation ions into the epitaxial structure layer except for the areas corresponding to the scribing channel, the protection ring, the active area, the second connection area and the third connection area, so that the area injected with the isolation ions is an insulating area;
manufacturing a protection ring on the surface of the epitaxial structure layer;
the second connection region is a region connecting the source electrode and the guard ring, and the third connection region is a region connecting the guard ring and the scribe line.
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