CN117393407A - Mass analysis magnet system for ribbon ion beam - Google Patents
Mass analysis magnet system for ribbon ion beam Download PDFInfo
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- CN117393407A CN117393407A CN202311373979.2A CN202311373979A CN117393407A CN 117393407 A CN117393407 A CN 117393407A CN 202311373979 A CN202311373979 A CN 202311373979A CN 117393407 A CN117393407 A CN 117393407A
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 68
- 230000005291 magnetic effect Effects 0.000 claims abstract description 36
- 150000002500 ions Chemical class 0.000 claims abstract description 35
- 238000004804 winding Methods 0.000 claims description 52
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000009417 prefabrication Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electron Tubes For Measurement (AREA)
Abstract
The invention relates to the field of ion implanters, and discloses a mass analysis magnet system for a ribbon ion beam, which consists of a quadrupole focusing magnet, a diode deflection magnet and an analysis slit; the quadrupole focusing magnet is used for carrying out initial long-axis focusing and short-axis defocusing on large-size and large-divergence-angle ion beams led out by the ion source; the two-pole deflection magnet generates a highly uniform deflection magnetic field, and separates and filters impurity ions contained in the ion beam by utilizing the difference of ion mass-to-charge ratios; the width and position of the analysis slit are adjustable, so that accurate selection of ions is realized. The invention has the advantages that: the quadrupole focusing magnet can process the highly divergent ions led out by the ion source and effectively reduce the transmission pore space required by the ions, and the dipolar deflection magnet can provide a highly uniform deflection magnetic field, thereby realizing high quality resolution and having simple and compact system structure.
Description
Technical Field
The present invention relates to a mass analysis magnet for removing impurity ions in an ion beam extracted from an ion source in the field of ion implantation.
Background
Ion implanters are critical devices in the pre-fabrication process of integrated circuits, widely used in semiconductor surface doping processes. In industrial production, to cope with an increase in the size of substrates, such as larger-sized photovoltaic panels, display screens, a wider-sized ribbon ion beam is required. The beam profile is generally ribbon-shaped, rectangular when cut in a plane perpendicular to the direction of travel of the beam.
The ion beam exiting the ion source typically contains one or more unwanted impurity ions, which are currently standard practice to separate from the ion beam using a magnetic analyzer to produce a highly pure ion beam of the desired doping, using a difference in mass to charge ratio. Such a mass analyzing electromagnet requires a magnetic field of high uniformity because the ion beam is deflected and separated with high accuracy.
For ribbon beams, on the one hand, the magnet pole gap is required to be sufficient to accommodate a large-sized ribbon beam, and on the other hand, the analyzing magnet is required to provide a suitable and uniform magnetic field throughout the ribbon beam size range. In the prior art, magnetic analyzers meeting this requirement have become difficult and expensive, bulky and difficult to meet the magnetic field quality requirements.
Disclosure of Invention
The invention aims to solve the technical problems, and provides a mass analysis magnet system which meets the requirements of ion source extraction on a large-size and large-divergence angle ion beam and has a novel structure.
The scheme of the invention is as follows: a mass analysis magnet system for a ribbon ion beam, comprising: the quadrupole focusing magnet is used for focusing the ribbon ion beam in the long side direction and defocusing the ribbon ion beam in the short side direction, outputting the ribbon ion beam to the dipole deflection magnet for deflection and separation, and selecting target ions through the analysis slit.
For large-size and large-divergence angle ion beams led out by an ion source, the invention adopts the combination of the two-pole deflection magnet and the four-pole focusing magnet, so that the loss of target ions can be reduced, and the gap of the magnet can be greatly reduced, thereby ensuring that the system has simple and compact structure, being beneficial to simplifying the manufacturing process and reducing the production cost.
As a preferable scheme: the two-pole deflection magnet is used for providing a highly uniform deflection magnetic field for the band-shaped ion beam envelope area, and the structure of the two-pole deflection magnet comprises an arc-shaped supporting cylinder, a first magnetic yoke and 2n arc-shaped saddle windings; 2n arc saddle windings are arranged on the surface of the arc supporting cylinder and are vertically symmetrical to form two poles of the two-pole deflection magnet, current density is approximately cos (theta) distributed along the circumferential direction in a mode of arranging wires with different turns for windings with different angles, and theta refers to the circumferential angle of the cross section of the magnet coil, and the different windings are uniformly arranged in the circumferential direction; the number of turns of the wire of the windings with different angles is calculated by the proportion coefficient of the total number of turnsDetermination of->。
The n is more than or equal to 4, and n is more preferably more than or equal to 4 and less than or equal to 6.
The current density of the two-pole deflection magnet is approximately cos (theta) distribution, and can generate purer two-pole magnetic field, so that the deflection magnetic field with larger effective area and high uniformity can be generated under the condition of the same size. The magnetic field uniformity of the two-pole deflection magnet can reach 1 per mill, and the highly uniform magnetic field is favorable for enabling the ion beam to pass through the analysis slit smoothly without distortion, so that the system can achieve higher mass resolution.
In addition, the two-pole deflection magnet realizes that the current density is distributed according to cos (theta) rule by arranging wires with different turns for windings at different positions, and is more beneficial to simplifying the structure and manufacturing process.
The specific arrangement of 2n arcuate saddle windings on the arcuate support cylinder is recommended as follows:
the 2n arc saddle winding groups are divided into two groups, the n winding sizes of each group are sequentially reduced, wherein two sides of the largest winding are close to the symmetrical plane of the arc supporting cylinder, the other windings of the group are sequentially arranged in the range of the largest winding from large to small, and the current of single-turn wires in each winding is the same.
The quadrupole focusing magnet preferably has the following structure: the ion beam comprises a second magnetic yoke and four saddle windings, wherein the four saddle windings are circumferentially distributed along the periphery of an ion beam channel, and are respectively and centrally distributed in four quadrants of a rectangular coordinate system which takes the center of the ion beam channel as an origin, is parallel to the short axis direction of the ribbon ion beam as an X axis and takes the long axis direction as a Y axis in the cross section.
To further simplify the structure and manufacturing process, the windings of the two-pole deflection magnet and the four-pole focusing magnet are respectively in series connection.
As preferable: the first magnetic yoke and the second magnetic yoke are cylindrical ferromagnetic yokes and are respectively sleeved on the peripheries of the two-pole deflection magnet and the four-pole focusing magnet coil.
The position of the analysis slit and the width of the slit are adjustable, and the analysis slit is used for precisely controlling and adjusting the ion beam density, the ion beam uniformity and the mass resolution in real time, so that the mass analysis requirements of different ion types and different ion energies can be met.
The cross section of the ribbon ion beam is rectangular and is divided into a long side and a short side, and the width of the air gap between the two-pole deflection magnet and the four-pole focusing magnet is slightly larger than the width of the long side of the ribbon ion beam.
The ion beam enters the two-pole deflection magnet and then exits at a certain deflection angle, and the deflection angle can be between 45 degrees and 180 degrees.
The beneficial effects of the invention are as follows:
1) In order to solve the problems of large, expensive and difficult magnet system caused by the requirement of large-size and large-divergence angle ion beams on large magnetic pole gaps and magnetic field uniformity in the prior art, the invention adopts a combination scheme of a two-pole deflection magnet and a four-pole focusing magnet, reduces the loss of target ions, and simultaneously greatly reduces the gaps of the magnets, so that the system has simple and compact structure, thereby simplifying the manufacturing process and reducing the production cost.
2) The two-pole deflection magnet can provide a highly uniform deflection magnetic field, so that the uniformity of the current intensity and the angle uniformity of the ion beam are remarkably improved, ions with different mass-to-charge ratios can be spatially separated better so as to pass through an analysis slit smoothly without distortion, and the system has higher mass resolution; in addition, the characteristics of the two-pole deflection magnet can also enable a larger uniform magnetic field area to be provided under the same size, so that the whole magnet system structure is simpler and more compact, and compared with the prior art, the two-pole deflection magnet has the advantages of greatly reduced volume and convenience in processing and manufacturing.
Drawings
FIG. 1 is a schematic plan view of an ion implanter including an ion beam mass analysis magnet system of the present invention;
fig. 2 is a schematic illustration of a profile in the direction of travel of a ribbon ion beam;
FIG. 3 is a schematic perspective view of a quadrupole focusing magnet of the present invention;
FIG. 4 is a schematic cross-sectional view of a quadrupole focusing magnet;
FIG. 5 is a schematic perspective view of a two-pole deflection magnet;
FIG. 6 is a schematic view of a cross section II-II of a two-pole deflection magnet.
Detailed Description
The ion beam mass analysis magnet system can be used in the field of ion implantation, in particular to ion implantation of a large photovoltaic cell panel and a display screen.
Fig. 1 is a schematic diagram of some of the basic components of an ion implanter incorporating the ion beam mass analysis magnet system of the present invention. In fig. 1, a ribbon ion beam 2 of a predetermined energy from an ion source 1 enters a quadrupole focusing magnet 3 and a dipole deflection magnet 5 in sequence, in which a vacuum ion beam passageway 4 is provided, the passageway 4 providing a curved path of the ion beam 2 and defining a curved trajectory of the ion beam.
The quadrupole focusing magnet 3 is used to provide a uniform quadrupole magnetic field perpendicular to the ion beam passing through. The ion beam extracted from the ion source 1 has a large size and a large divergence angle, and the quadrupole magnet 3 is used for providing a longitudinal focusing and a transverse defocusing for the ion beam 2 so as to reduce the expansion of the ion beam in the long-side direction, so that the magnetic pole gap of the rear required diode deflection magnet 5 is greatly reduced, and the transverse defocusing is equivalent to compensating for the transverse focusing of the ion beam by the rear diode deflection magnet 5, so that the ion beam coming out of the diode deflection magnet 5 can be prevented from being excessively focused.
The two-pole deflection magnet 5 is used to provide a highly uniform deflection magnetic field to the band-shaped ion beam envelope, perpendicular to the plane of curvature of the passing ion beam, for deflecting the ion beam along a radius of curvature, which in this embodiment may be between 45 and 180 degrees, in the embodiment 90 deg. two-pole deflection magnet.
The ion beam focused by the quadrupole focusing magnet 3 passes through the dipole deflection magnet 5 along a curved path, and for ions of different mass to charge ratios led out from the ion source, the deflection magnet effectively spatially separates the ions of different mass to charge ratios after leaving the dipole deflection magnet 5. And then collimated by the mass analysis slit 6 and target ions are selected to pass through the slit into the post-processing chamber 9. In the post-processing chamber 9, a target ion beam 7 is implanted onto a substrate 8 to be processed.
Wherein the position of the analysis slit 6 and the slit width are adjustable for precise control and real-time adjustment of ion beam density, ion beam uniformity and mass resolution.
Fig. 2 is a cross-sectional profile view of the ion beam 7, and the ion beam 7 is ribbon-shaped and rectangular, and has a cross-sectional profile with a long dimension L and a short dimension w. The long dimension of the ribbon beam is perpendicular to the plane of the bend, i.e., perpendicular to the plane of the paper in fig. 1. The vacuum channel 4 is of a size sufficient to accommodate the envelope dimensions during the travel of the ion beam; the air gap spacing of the magnets 3, 5 should also be large enough to accommodate the ribbon beam passing through. The deflection magnetic field should be highly uniform within the long dimension L of the ribbon ion beam so that the target ions within the long dimension are all subjected to the same deflection force; in addition, the magnetic field needs to be sufficiently uniform over a range in the short dimension direction perpendicular to the deflection path to simultaneously maintain the stability and uniformity of the target ion beam in the long and short dimension directions.
Fig. 3 shows a quadrupole magnet structure of the invention, which consists of four saddle windings 12-15, a cylindrical magnet yoke 11 and a stainless steel cylinder in the middle for supporting, wherein the windings are fixed on the inner side of the magnet yoke through a fixed block, are integrally sleeved on the stainless steel cylinder in the middle, and are electrically connected in series. FIG. 4 is a view along section line I-I in FIG. 1. The cross-sectional schematic view of the quadrupole magnets is taken, the current direction in the conductors 12a,13a,14a,15a is inward toward the paper surface, the current direction in the conductors 12b,13b,14b,15b is outward toward the paper surface (12 a, 12b are two sides of the coil winding 12, and so on); the magnet structure is symmetrical along the x-axis and the y-axis respectively, and the arrangement angle alpha of the wires is optimized and calculated in order to obtain a uniform quadrupole field.
Fig. 5 and 6 illustrate the structure of the two-pole deflection magnet of the present invention. Fig. 5 is a partial view of the two-pole deflection magnet 5; fig. 6 is a schematic cross-sectional view of the two-pole deflection magnet 5 taken along the section line ii-ii in fig. 1.
As shown in fig. 5 and 6, the two-pole deflection magnet 5 mainly includes a ferromagnetic yoke 16 and a plurality of arcuate saddle-shaped coil windings 17-24 along the deflection path, and in order to obtain a magnetic field that is as uniform as possible, and at the same time, it is necessary to calculate the quantized distribution of the coil windings as simply and reliably as possible in terms of implementation process. In this embodiment, as shown in fig. 5, the windings 17, 18, 19, 20, 21, 22, 23, 24 are divided into two groups, the 4 windings of each group are sequentially reduced in size, the two groups of windings are symmetrically arranged on the surface of the arc-shaped supporting cylinder for supporting, two sides of the largest one of the windings are close to the symmetry plane of the arc-shaped supporting cylinder, the other windings of the group are sequentially arranged in the range of the largest one from large to small, the windings are in serial connection, the current of single-turn coils in the windings is the same, and the current density of each group of windings is distributed in a cosine rule along the circumferential angle of the cross section of the magnet coil in a mode of arranging the coils with different turns for the windings with different positions. As shown in fig. 6, the current direction of the coils 17a,18a,19a,20a,21a,22a,23a,24a is inward toward the paper surface, and the current direction of the coils 17b,18b,19b,20b,21b,22b,23b,24b is outward toward the paper surface.
According to the principle that the diode deflection magnet 5 can generate a pure 2-pole magnetic field according to the cos (theta) distribution of current density, the cos (theta) distribution of the current density is approximately realized by arranging wires with different turns at 16 different theta positions, wherein theta refers to an angle of anticlockwise rotation around a z-axis by taking an x-axis as a starting axis.
In this embodiment, the monopole in the two-pole deflection magnet 5 is composed of 4 windings, the 4 windings occupy 180 °, which is equivalent to that each winding has 22.5 ° on average on one side, and the distribution of winding turns is calculated as follows:
in the method, in the process of the invention,the ratio coefficient of the number of turns of the ith winding coil is expressed, the total number of turns N can be determined by ampere loop law, and the number of turns of the corresponding winding coil is +.>. The specific winding method is recommended as follows: in stainless steelThe arc-shaped supporting cylinder surface is provided with a fixed block and a positioning block according to a set winding track, then each winding, such as windings 17, 18, 19, 20 and the like, is wound according to the respective turn number requirement, is fixed at the corresponding position on the cylinder surface as shown in fig. 5, and finally is connected with two ends of each winding in series as shown in fig. 6.
The windings in the above embodiments are all wound from oxygen free copper wire.
The number of windings in the above embodiment can be adjusted in real time according to the magnet aperture.
The cylindrical iron magnetic yoke is used outside the two-pole deflection magnet and the four-pole focusing magnet, and the ferromagnetic yoke has two purposes, namely, collecting the magnetic field outside the coil, and enhancing the magnetic field inside the aperture of the coil and improving the magnetic field uniformity in the aperture; the magnetic yoke is made of DT4 material and is formed by combining an upper half and a lower half.
The invention has the advantages that: the initial focusing of the quadrupole focusing magnet to the ions can process large-size and highly divergent ion beams led out by an ion source, and can effectively reduce transmission pores required by the ions, so that the system has simple and compact structure; in addition, the dipolar deflection magnet can provide a highly uniform deflection magnetic field (the magnetic field uniformity can reach 1 per mill), so that high-quality resolution, high ion beam injection (dosage and angle) uniformity and lower ion loss are realized, and high-purity wide-width ion beams with different widths of 300 mm and 500 mm and different thicknesses of 40mm and 80mm can be generated.
The foregoing examples are only for illustrating some embodiments of the present application, wherein the structures, connection modes, manufacturing processes, etc. of the components may be changed, and all equivalent changes, modifications, or improvements made on the basis of the present application should not be excluded from the protection scope of the present application.
Claims (9)
1. A mass analysis magnet system for a ribbon ion beam, comprising: the quadrupole focusing magnet is used for focusing the ribbon ion beam in the long side direction and defocusing the ribbon ion beam in the short side direction, outputting the ribbon ion beam to the dipole deflection magnet for deflection and separation, and selecting target ions through the analysis slit.
2. The mass analysis magnet system of claim 1, wherein the two-pole deflection magnet is configured to provide a highly uniform deflection magnetic field for the ribbon beam envelope region, and wherein the structure comprises an arc support cylinder, a first yoke, and 2n arc saddle windings, n being greater than or equal to 4;2n arc saddle windings are arranged on the surface of the arc supporting cylinder and are vertically symmetrical to form two poles of the two-pole deflection magnet, current density is approximately cos (theta) distributed along the circumferential direction in a mode of arranging wires with different turns for windings with different angles, and theta refers to the circumferential angle of the cross section of the magnet coil, and the different windings are uniformly arranged in the circumferential direction; the number of turns of the wire of the windings with different angles is calculated by the proportion coefficient of the total number of turnsDetermination of->。
3. The mass analysis magnet system according to claim 1, wherein the quadrupole focusing magnet structure is as follows: the ion beam comprises a second magnetic yoke and four saddle windings, wherein the four saddle windings are circumferentially distributed along the periphery of an ion beam channel, and are respectively and centrally distributed in four quadrants of a rectangular coordinate system which takes the center of the ion beam channel as an origin, is parallel to the short axis direction of the ribbon ion beam as an X axis and takes the long axis direction as a Y axis in the cross section.
4. A mass analysis magnet system according to claims 2-3, wherein each of said windings of said dipole deflection magnet and said quadrupole focusing magnet are in a series relationship.
5. A mass analysis magnet system according to claims 2-3, wherein the first and second yokes are cylindrical ferromagnetic yokes respectively sleeved around the two-pole deflection magnet and four-pole focusing magnet coils.
6. A mass analysis magnet system according to claims 2-3, wherein each of said windings of said dipole deflection magnet and said quadrupole focusing magnet is wound with oxygen free copper wire.
7. A mass analysis magnet system according to any of claims 1-4, wherein the position of the analysis slit and the width of the slit are adjustable.
8. The mass analysis magnet system of claim 1, wherein the ribbon beam is rectangular in cross-section and is divided into long sides and short sides, and the dipole deflection magnet and quadrupole focusing magnet air gap widths are slightly larger than the ribbon beam long side widths.
9. The mass analysis magnet system of claim 1, wherein the ion beam enters the dipole deflection magnet and exits at a deflection angle between 45 degrees and 180 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311373979.2A CN117393407A (en) | 2023-10-23 | 2023-10-23 | Mass analysis magnet system for ribbon ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311373979.2A CN117393407A (en) | 2023-10-23 | 2023-10-23 | Mass analysis magnet system for ribbon ion beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117393407A true CN117393407A (en) | 2024-01-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311373979.2A Pending CN117393407A (en) | 2023-10-23 | 2023-10-23 | Mass analysis magnet system for ribbon ion beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117393407A (en) |
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- 2023-10-23 CN CN202311373979.2A patent/CN117393407A/en active Pending
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