CN101692369B - Mass analyzing magnet for broadband ion beam and implanter system - Google Patents
Mass analyzing magnet for broadband ion beam and implanter system Download PDFInfo
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- CN101692369B CN101692369B CN2009100600921A CN200910060092A CN101692369B CN 101692369 B CN101692369 B CN 101692369B CN 2009100600921 A CN2009100600921 A CN 2009100600921A CN 200910060092 A CN200910060092 A CN 200910060092A CN 101692369 B CN101692369 B CN 101692369B
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Abstract
The invention relates to the implantation field of broadband ion beams, and discloses a mass analyzing magnet for broadband ion beams. The mass analyzing magnet comprises a magnet and a coil connected with a power supply. The magnet comprises magnetic poles, a magnet yoke and magnetic shielding plates, the magnetic poles comprise an upper magnetic pole and a lower magnetic pole, the magnetic shielding plates comprise an upper magnetic shielding plate and a lower magnetic shielding plate, and a magnetic field space for the broadband ion beams to pass in a certain route is arranged between the upper magnetic pole and the lower magnetic pole. The invention further discloses an implanter system, which comprises an ion source, an extraction electrode unit, a deflection speed-reducing unit, a mass analyzing magnet, a target workpiece and workpiece transmitting unit, a beam flux measuring and diagnosing unit and a control unit. The invention has the beneficial effect of high quality resolution and nearly zero system aberration, and can generate pure broadband ion beams of 300mm, 450mm and even 1000mm, thereby improving the quality of ultra-low energy ion beams generated by a speed reducer and decreasing the angular dispersion of the ultra-low energy ion beams.
Description
Technical field
The present invention relates to the injection field of broadband ion beam, particularly a kind of mass analyzing magmet that is used for broadband ion beam.
Background technology
In the prior art, comprise one or more unwanted ions usually from the ion beam of ion source production, these ion sources are in ionogenic ion chamber material with for producing working gas molecule or the solid molecule that needed ion provided.Therefore, for many years the way of standard is to use the field quality analyzer from ion beam, to separate above-mentioned unwanted ion.Yet, for broadband ion beam, particularly concerning the broadband ion beam of those big the ratio of width to height and big line, such field quality analyzer become more and more difficult and costliness.Researchers have developed different ion implant systems to produce broadband ion beam.Yet because the performance of analyzing magnet is satisfied inadequately, the ion implant systems of these types is not the best solution of monolithic large beam ion implanter.Therefore, be necessary to provide a new system, produce the big line broadband ion beam of high uniformity, reduced production cost simultaneously, simplified manufacturing technique.
Summary of the invention
In order to solve the problems of the prior art; The invention provides a kind of mass analyzing magmet that is used for broadband ion beam, solve the problem that in the design of magnet, can not provide a kind of at present and have suitable mass resolution, system aberration is little and transmits the broadband ion beam of big line.
The present invention solves the technical scheme that the prior art problem adopted: design and make a kind of mass analyzing magmet that is used for broadband ion beam, the coil that comprises magnet and be connected with power supply; Said magnet comprises magnetic pole, yoke and magnetic shield panel; Said yoke is connected said magnetic pole with said magnetic shield panel; Said magnetic pole comprises magnetic pole and lower magnetic pole; Said magnetic shield panel comprises magnetic shield panel and following magnetic shield panel; Said going up is provided with the magnetic field space that supplies broadband ion beam to pass through with a fixed line between magnetic pole and lower magnetic pole; Said coil comprises coil and lower coil; Said coil generates and lets the magnetic field of broadband ion beam steering; Said upward coil and lower coil are wrapped in said going up on magnetic pole and the lower magnetic pole respectively; Said magnet is provided with the quality selection slit; Said quality selection slit is positioned at the middle part of said magnet and lets its desired ion pass through.
The present invention further improves: said magnetic pole comprises first half and latter half of; Said first half and latter half of linking together; Said first half and latter half of joint face symmetry with them or asymmetric; Said first half by ion beam from it while getting into magnet and from said latter half of going out.
The present invention further improves: said magnetic shield panel is connected with said magnetic pole; The said pole parts of said coil encircling; The surface design of said magnetic pole is for producing the surface that uniform magnetic field distributes or non-uniform magnetic-field distributes; Said uniform magnetic field distributes and will guide ion to equate the curve track motion of deflection radius; Said non-uniform magnetic-field distributes and will guide the curve track motion of ion with unequal deflection radius.
The present invention further improves: the inside of said magnet is provided with the focal spot district, and said focal spot district forms for the broadband ion beam that passes through is focused at the middle part of said magnet, and said quality selection slit is arranged on the focal spot district.
The present invention further improves: said magnetic pole and the corresponding limit of said magnetic shield panel are the entering limit of broadband ion beam or go out trimming that it is plane or curve form; Said curved surface is nonreentrant surface or recessed surface configuration; A said fixed line is similar circle or similar oval route.
The present invention further improves: the end of said magnetic pole is provided with movable rotary pole head, the rotatable certain angle of said movable rotary pole head.
The present invention is in order to be applied to this mass analyzing magmet practice; Specially make a kind of implanter system that is used for broadband ion beam, comprise ion source, extraction electrode unit, mass analyzing magmet, deflection deceleration unit, target workpiece and workpiece delivery unit, beam current measurement diagnosis unit and control unit; Said extraction electrode unit and said ion source are positioned at a side of said mass analyzing magmet; Said extraction electrode unit is positioned between said ion source and said mass analyzing magmet; Said deflection deceleration unit, target workpiece and workpiece delivery unit and beam current measurement diagnosis unit are positioned at the opposite side of said mass analyzing magmet, and said deflection deceleration unit, target workpiece and workpiece delivery unit, beam current measurement diagnosis unit are connected in order; Said extraction electrode unit is used for from said ion source, obtaining broadband ion beam; Broadband ion beam focuses on a narrow quality analysis slit at said mass analyzing magmet inner focusing, and said quality analysis slit is provided with the suitable openings width so that let the ion with the quality of preestablishing pass through, and forms the broadband bundle in this magnet exit; Said beam current measurement diagnosis unit is measured the current density and the angle of broadband ion beam, and regulates local electric field or magnetic field local current densities and the angle with the change ion beam through said correcting unit; Said deflection deceleration unit is used for producing the ion beam with extremely low-yield pollution; Said control unit is connected with said ion source, extraction electrode unit, deflection deceleration unit, mass analyzing magmet, target workpiece and workpiece delivery unit and beam current measurement diagnosis unit respectively.
The present invention further improves: the said implanter system that is used for broadband ion beam also can comprise correcting unit; Angle and position that said correcting unit is adjusted each intrafascicular bundle group of broadband through the electric field or the magnetic field of part.
The present invention further improves: the said implanter system that is used for broadband ion beam also can comprise two angle devices; The broadband ion beam that said angle device will come out in the said mass analyzing magmet enlarges or compresses to reach the width of expectation.
The present invention further improves: can also be provided with movable rotary pole head on the said mass analyzing magmet; But the angle that the deflection of said movable rotary pole head is certain, said movable rotary pole head can be for conversion into focused beam acts or angular-spread beam with the outlet line that produces; The implanter system of said broadband ion beam also can comprise an angle device; Said angle device is corresponding with said movable rotary pole head; Said angle device will be proofreaied and correct obtaining parallel beam the angle of the focused beam acts of coming out in the said movable rotary pole head or angular-spread beam, thereby broadband ion beam is enlarged or compresses to reach the width of expectation.
The present invention further improves: said ion beam gets into behind the said mass analyzing magmet and with certain deflection angle, and said deflection angle is spent between 200 degree 90.
The present invention further improves: the coil that said mass analyzing magmet comprises magnet and is connected with power supply; Said magnet comprises magnetic pole, yoke and magnetic shield panel; Said yoke is connected said magnetic pole with said magnetic shield panel; Said magnetic pole comprises magnetic pole and lower magnetic pole; Said magnetic shield panel comprises magnetic shield panel and following magnetic shield panel; Said going up is provided with the magnetic field space that supplies broadband ion beam to pass through with a fixed line between magnetic pole and lower magnetic pole; Said coil comprises coil and lower coil; Said coil generates and lets the magnetic field of broadband ion beam steering; Said upward coil and lower coil are wrapped in said going up on magnetic pole and the lower magnetic pole respectively; Said magnet is provided with the quality selection slit; Said quality selection slit is positioned at the middle part of said magnet and lets its desired ion pass through.
The present invention further improves: said magnetic pole comprises first half and latter half of; Said first half and latter half of linking together; Said first half and latter half of joint face symmetry with them or asymmetric; Said first half by ion beam from it while getting into magnet and from said latter half of going out; Said magnetic shield panel is connected with said magnetic pole; The said pole parts of said coil encircling; The surface design of said magnetic pole is for producing the surface that uniform magnetic field distributes or non-uniform magnetic-field distributes; Said uniform magnetic field distributes and will guide ion to equate the curve track motion of deflection radius; Said non-uniform magnetic-field distributes and will guide the curve track motion of ion with unequal deflection radius; The inside of said magnet is provided with the focal spot district, and said focal spot district forms for the broadband ion beam that passes through is focused at the middle part of said magnet, and said quality selection slit is arranged on the focal spot district; Said magnetic pole and the corresponding limit of said magnetic shield panel can be plane or curve form; Said curved surface is nonreentrant surface or recessed surface configuration; The end of said magnetic pole is provided with movable rotary pole head, the rotatable certain angle of said movable rotary pole head.
The invention has the beneficial effects as follows: the present invention has high-quality resolution rate and almost nil system aberration; Can improve the quality of the ultra-low energy ion bundle that produces through decelerator, the angle that reduces the ultra-low energy ion bundle is discrete; The strong uniformity of the stream of ion beam and even angle degree are easy to control; Manufacturing has the big electric current implanter of the reliable monolithic of superior control ability; The present invention is in particular for low-yield line, and 300 millimeters application and the application of following 450mm provide the product of a brilliance.
Description of drawings
Fig. 1 changes from U.S. Patent number 5834786, and single magnet broadband implanter also has mass resolution 2;
Fig. 2 changes from U.S. Patent number 5350926, and two magnet systems also have mass resolution 60;
Fig. 3 a changes from U.S. Patent number 6160262, window frame type magnet system, and it has rational mass resolution;
Fig. 3 b is reprinted from U.S. Patent number 6160262, shows the cross section of window frame type magnet;
Fig. 4 is reprinted from U.S. Patent number 7112789, and window frame type magnet and footpost coil have the high-quality resolution rate, uses open Pernod Paderewski quadrupole lens to produce vertical broadband line;
Fig. 5 expresses two microbeam groups on the diverse location of restrainting in the broadband;
Fig. 6 is reprinted from U.S. Patent number 6885014, and two magnet systems have high resolution, and the parallel band ion beam that provides with the broadband ion source is as input;
Fig. 7 a is the sketch map of conventional sector magnet;
Fig. 7 b is the sketch map that conventional mass analyzing magmet is operated in point-to-point transmission;
Fig. 7 c is that conventional mass analyzing magmet is operated in parallel sketch map to a transmission;
Fig. 8 is the sketch map of the notion of the present invention's 180 degree magnet, and magnetic field is uniform magnetic field, and ion is walked circuit orbit;
Fig. 9 is a chart, the relation of the chromatic dispersion D of the magnet in the displayed map 8, focal spot size dw and deflection radius R and broadband beam width W;
Figure 10 shows the notion of the present invention's 180 degree magnet.Magnetic field intensity changes along z gradually, and ion is walked elliptic orbit;
Figure 11 shows circuit orbit and minor axis a that has compared radius a and the focal spot size that extends the elliptical orbit of factor b/a=1.2;
Figure 12 has shown a design example, the relation of chromatic dispersion D and focal spot size dw and ion trajectory, minor axis a and elongation factors b/a=1.2;
Figure 13 has shown another notion of the magnet of 180 degree of the present invention.Magnetic field intensity changes along z gradually, and ion is walked elliptic orbit.Through changing the boundary shape in magnetic field, to reduce focal spot size;
Figure 14 has shown another notion of the magnet of 180 degree of the present invention, and the deflection angle of magnet is at 90 to 200 degree.The broadband bundle has the incidence angle and the angle of emergence with respect to the magnet border;
Figure 15 has represented the end view of a tendentious mass analyzing magmet of the present invention;
Figure 16 has represented the distribution along z of magnetic-field component By and Bz;
Figure 17 has represented the cross-sectional view of a tendentious mass analyzing magmet of the present invention, and the magnetic pole head is rectangle, and ion trajectory is also expressed;
Figure 18 has represented the cross-sectional view of another tendentious mass analyzing magmet of the present invention, and the shape of magnetic pole head is optimized with weight reduction according to the line envelope;
Figure 19 a and 19b have represented the three-dimensional perspective of the mass analyzing magmet of a tendentious Figure 18 of the present invention;
Figure 20 has shown the ion trajectory on the long axis plane of broadband line, and the broadband line forms focal spot in magnet;
Figure 21 has shown the three-dimensional perspective of ion trajectory in magnet;
Figure 22 has represented the three-dimensional perspective of another tendentious mass analyzing magmet of the present invention, with
Realize that general deflection angle is at 90 to 180 degree among Figure 14;
Figure 23 is the sketch map that adopts a broadband line ion implantation machine system of magnet of the present invention, and it has adopted 180 degree deflections;
Figure 23 a is the end view of Figure 23, and the beam path of having represented the deflection of deflection decelerator;
Figure 24 is the sketch map that adopts another broadband line ion implantation machine system of magnet of the present invention, and it has adopted non-180 degree deflections;
Figure 25 is the sketch map that adopts another broadband line ion implantation machine system of magnet of the present invention, and it has adopted Pernod Paderewski level Four magnet to enlarge line to form a wideer broadband bundle;
Figure 26 has represented in the system of Figure 25 how to utilize Pernod Paderewski level Four magnet compression line to form a narrower line;
Figure 27 is the sketch map that adopts another broadband line ion implantation machine system of magnet of the present invention, and it adopts rotatable magnetic pole head and a Pernod Paderewski level Four magnet to enlarge line to form a wideer broadband bundle;
Embodiment
Figure 28 has represented in the system of Figure 27 how to utilize rotatable magnetic pole head and a Pernod Paderewski level Four magnet compression line to form a narrower line.
Below in conjunction with accompanying drawing the present invention is described further.
Following elder generation is to some explanations of prior art:
In Fig. 1; Be reprinted from U.S. Patent number 5834786; The broadband line ion beam implanter system that is used for flat-panel monitor that Mitsui Ship-building Company produces, its system includes the field quality analyzer, though have only faint mass resolution ability (mass resolution is 2); But for flat-panel monitor, this has been enough to eliminate some abominable contaminant ion.
With above-mentioned different be that U.S. Varian semiconductor company produces is used for the broadband line ion implantation machine system that semiconductor wafers injects.System utilizes two kinds of different magnet to produce a suitable broadband ion beam.First block of magnet carries out the quality analysis of ion beam, and second block of magnet makes ion beam parallel.It is the same good that the mass resolution of two magnet systems of Varian and other any commercial ion implanters can provide, and surpasses 50 usually.For this reason, the wide beam ion implantation machine system standard on this pair of magnet system structure ion beam uniformity that can provide and clarity have come true.It's a pity that this pair magnet system has important disadvantages: it is complicated and expensive, and the beam optics aberration is big, only is applicable to 300 millimeters ion beams etc., sees Fig. 2 for details.Because complex interactions between magnetic field and the ion beam, the technology path of this pair magnet can cause that some are serious technical, in the practicality with manufacture of semiconductor on relevant problem, thereby increased the operating cost of this equipment.Particularly, ion beam is long through the distance of this system, and for the low-yield high current ion beam that needs on some manufacture of semiconductor, its line uniformity and even angle degree more and more are difficult to control.
Day, new ion device Co., Ltd (kyoto, Japan) developed the ion injection that another magnet system provides the broadband line to be used for flat-panel monitor, and this system uses a single macrobending radius magnet, compares Previous System and has realized higher quality resolution.In this Ri Xin system, the major axis of broadband line is consistent with the direction of magnetic field of magnets, and the width of broadband bundle is to be determined by the size in broadband ion source and the open space (from the south magnetic pole to the north magnetic pole) of analyzing magnet.The magnetic field space of magnet must just can hold wideer broadband line very greatly.Structurally, a day new analyzing magnet has one near rectangular yoke, and coil loop is around the side column of rectangle yoke, coil grouping coiling, the coil current control of can dividing into groups, thereby the Distribution of Magnetic Field in the controlling magnetic field district.See Fig. 3 A and 3B, be reprinted from U.S. Patent number 6160262.
U.S. AIBT company another magnet system of exploitation produces broadband ion beam.Ion source produces the arrowband ion beam of a diffusion, and this ion beam of magnet deflection also provides focusing force at the short-axis direction of ion beam, but at the long axis direction of ion beam focusing force is not provided.Magnet is similar to the magnet of Fig. 3, but its coil adopts so-called footpost coil, to reduce the fringing field zone.Therefore, ion beam is formed on along formation broadband ion beam after leaving magnet.Be provided with one in the focal position and be similar to the quadripolar magnetic field lens, these quadripolar magnetic field lens provide focusing force at the long axis direction of ion beam, thereby gather into parallel broadband line to the diffusion line.See Fig. 4 for details, be reprinted from U.S. Patent number 7112789.
2002, this Wei Nisite disclosed a system, sees Fig. 6 for details, was reprinted from the patent No. 6885014 of the U.S..This system has also used two magnet, and first magnet realized the quality analysis of broadband ion beam, and second block of magnet is reduced into parallel broadband ion beam to ion beam.The minor axis of broadband ion beam is consistent with magnetic direction.There is an outstanding feature in this system, and the parallel band ion beam that it uses the broadband ion source to provide is imported line as magnet system.
Conventional mass analyzing magmet adopts fan-shaped dipolar magnet usually, and FIG 7a has shown sector magnet and at interior ion beam.Magnetic field is that the space between two magnetic poles 1 of magnet and 2 produces, and ion beam 3 is normally circular or oval, produces and be sent to magnet by ion source; Fig7b has shown a typical beam optics, strictly speaking, is the image conversion of the point-to-point of quality analysis system; FIG7c shows another typical beam optics, strictly speaking, is the parallel image conversion to point of quality analysis system.
Magnet the two poles of the earth 1 and 2 ingress edge and outlet edge can be designed with low-angle α and β.The central orbit of line is labeled as 6.7 and 8 represent two typical moving iron tracks, and they are usually from the object point 4s, and ion source is placed on object point 4 usually.Quality selection slit 9 is placed on image point 5 places usually.(x, y s) are also shown among Fig. 7 b and Fig. 7 c coordinate system of describing mass analytical system, and x and y are common horizontal direction and vertical direction coordinates, but s is defined by along central orbit 6.In order to improve the mass resolution of analytical system, through selecting drift space L1 (object point 4 is to the magnet inlet), drift space L2 (magnet exports to picture point 5), magnet deflection radius R and deflection angle provide maximum chromatic dispersion.Sometimes in order to reduce aberration, the entrance and exit of magnetic pole is designed to the curved surface that radius is respectively r1 and r2.
The focus 5 of traditional mass analyzing magmet is positioned at outside the magnet, and focus is that to do quality analysis necessary.Yet, in order to form broadband bundle, need be extended to parallel broadband to line from focus with second block of magnet, the system of Fig. 2 and Fig. 6 comes to this and does.Such arrangement is exactly a so-called pair of magnet system.For the broadband bundle, traditional mass analyzing magmet has intrinsic big aberration.For the point-to-point transmission shown in Fig. 7 b, aberration increases with the increase of beam divergence angle θ.The parallel point that arrives for shown in Fig. 7 c transmits, and aberration increases with the increase of the width w of line.Big aberration will cause by the variation along the wide beam long axis direction of the beam current density of second formed wide beam of magnet, and will cause the variation of the angle (nonparallelism) of broadband bundle.
Based on above-mentioned different mass analyzing magmet, researchers have developed different ion implant systems to produce broadband ion beam.Yet because the performance of analyzing magnet is satisfied inadequately, the ion implant systems of these types is not the best solution of monolithic large beam ion implanter.Therefore, be necessary to provide a new system, produce the big line broadband ion beam of high uniformity, reduced production cost simultaneously, simplified manufacturing technique.
For the mass analyzing magmet that is used for broadband ion beam among the present invention:
Like Fig. 8, ion 103 gets into uniform magnetic field zone 101 from zero field regions 102, and the border of field region is 112.103 ions get into the angle of vertical magnetic field zone boundary 112, and in uniform magnetic field, masses' ion of different quality will move on the circular orbit of different radii,
Here r is the radius of circus movement track, and m is the radius of ion, and q is the charge number of ion, and v is the movement velocity of ion, and B is a magnetic field intensity.Ion 103 goes out the motion half-turn to zero field regions 102 then, and the deflection angle of ion 103 is 180 degree just.Equally, an input broadband bundle 108, the central ion of this broadband bundle is 103, its border ion is 105 and 106,105 and 106 pairs 103 center symmetries.After this parallel broadband bundle 108 got into field regions 101, its all ion all will be through the circuit orbit of similar same radius r in field regions, after importing parallel broadband bundle 108 and will being deflected 180 degree, formed a parallel output broadband again and restrainted 109.Output broadband bundle 109 are input broadband bundles 108 long axis direction conversion one to one.If input bundle is a parallel broadband bundle, output bundle also will be a parallel broadband bundle, and magnetic field does not increase any aberration.
At the middle part of field region, promptly at the top of circuit orbit, the broadband bundle can form a little focal spot 110, and the geometric widths of this focal spot is dw.The size of this focal spot can be come out with basic geometrical calculation;
Wherein w is the width of input tape bundle.Concerning the ion with different quality (m-dm), its central orbit is 104.The definition of chromatic dispersion D 111 is the difference of not co-orbital radius of the ion of different quality, and D can draw from formula (1),
In order to be mass of ion that the broadband bundle of m separates with the broadband bundle of mass of ion for (m-dm), chromatic dispersion D need be greater than geometry focal spot dw.Quality analysis slit 107 can be arranged near the focal spot position of formation, and the opening of slit can be set to dw and less than D, and like this, (scope of m ± dm), these ions will be stopped by slit 107 if the quality of ion exceeds.
Therefore, the magnet of these 180 degree satisfies basic requirement:
1) accepts input broadband line; 2) form a little focal spot, so that can do the quality analysis of broadband bundle; 3) after the process quality analysis, ion beam reverts to the broadband bundle in outlet, does not have the aberration distortion.
Be different from traditional mass analyzing magmet, the characteristics of this 180 degree magnet are: 1) the focusing focal spot of broadband bundle is inner at analyzing magnet; 2) all ions in the bundle of broadband receive the effect in identical magnetic field, and their track is identical, but according to position translation in position of injecting ion; 3) magnet does not cause aberration, if downstream adopt deceleration system to produce low energy ion beam, it is very important that this function will become.
Fig. 9 is a sets of curves, the relation of the chromatic dispersion D of the magnet in the displayed map 8, focal spot size dw and deflection radius r and broadband beam width w, and chromatic dispersion D is corresponding to mass resolution 10.The result finds, focal spot dw with the increase of beamwidth increase very fast, can be applicable to wideer broadband bundle in order to make this magnet, the deflection radius r of magnet must increase.Clearly, to the line of non-constant width, it is very big that magnet will become.In reality, this will limit the application of this 180 degree magnet.Therefore, can do the quality analysis of wideer broadband bundle, be necessary to do more accurate design in order to make undersized magnet.
If can increase chromatic dispersion D or reduce focal spot dw size, resolution just can improve the quality.
Figure 10 has explained the technology that increases mass resolution.At field region 120, let magnetic field distribution change along z, in this example, the section of beginning is uniformly to false B (z) in magnetic field, dies down gradually along the z direction then.Input broadband bundle 108 102 gets into field regions 120 from the null field district, and the border of field region is 112.Under such field distribution B (z), the tracks of ion will become elliptic orbit.
Elliptical orbit can be represented by its major axis b and minor axis a, and its ratio b/a is defined by elongation factors.Elongation factors b/a depends primarily on DISTRIBUTION OF MAGNETIC FIELD B (z).Through changing Distribution of Magnetic Field B (z), can adjust b/a.From practical reason, elongation factors b/a is normally between 1 and 3.
At the top of track, the broadband bundle can form a little focal spot 110, and the geometric widths of this focal spot is dw.The size of this focal spot can be come out with basic geometrical calculation,
The elliptic orbit shape is by field distribution B (z) decision, and its shape can reduce focal spot dw size greatly how much.Figure 11 shows circuit orbit and minor axis a that has compared radius a and the focal spot size that extends the elliptical orbit of factor b/a=1.2.Obviously, elliptical orbit has reduced dw greatly, to b/a=1.2, reduces the factor and is about 1.5, to b/a=1.4, reduces the factor and is about 2.For different a, it is slightly different to reduce the factor.
The elliptic orbit definite by field distribution B (z) also can improve chromatic dispersion greatly.For ease of understanding, the reason that chromatic dispersion increases is described just here.Because the variation in magnetic field, the radius of curvature of ion motion also change thereupon, in the magnet porch, the radius of curvature of track is a, and near quality analysis slit 107, radius of curvature can calculate,
According to definition (1), chromatic dispersion will be,
For a design example, b/a=1.2, the factor that chromatic dispersion increases is about 1.44.In order to increase chromatic dispersion D and to reduce focal spot dw, can make track have bigger elongation factors b/a.
Figure 12 has shown a design example, for different beam width w, and the relation of chromatic dispersion D and focal spot size dw and ion trajectory, minor axis a and elongation factors b/a=1.2.Compare with the result of Fig. 9, most clearly show, compare garden shape track, have elongation factors b/a elliptic orbit, its chromatic dispersion D is far longer than how much focal spot size dw.This improvement will bring two important results to the magnet design:
1) for to reach identical mass resolution, the size of magnet can significantly reduce.For example, mass resolution is set at 10 if desired, and in the design of b/a=1.2, for the broadband bundle of 300 mm wides, the characteristic size a of required magnet can be reduced to 35 centimetres from 50 centimetres; For 450 millimeters broadband bundles, the characteristic size a of required magnet can be reduced to 50 centimetres from 75 centimetres.
2) for the magnet of same size, mass resolution can increase greatly.For example, if let characteristic size a=60 centimetre of magnet, for b/a=1.2, mass resolution can reach 30; And for b/a=1 (b/a=1 is meant circuit orbit), its mass resolution has only 15.
Figure 12 also shows the feasibility of the broadband bundle that generation is wideer.For example, for 600 millimeters broadband bundles, the magnet characteristic size can provide mass resolution greater than 10 for a=70 centimetre.Even, adopt bigger b/a through careful design to 1000 millimeters broadbands bundle, and can use characteristic size a=90 centimetre magnet, can satisfy mass resolution greater than 10 requirement.It is very rational that such magnet size is compared with 1000 millimeters broadband bundles.
The system design that the Distribution of Magnetic Field B that gradually changes (z) returns the ion implantor that adopts magnet of the present invention has brought two other critical function.
First function is that owing to be elliptical orbit, the interval between input bundle and the output bundle can increase greatly.For the characteristic size a of magnet, if track elongation factor b/a=1.2, then spacing can increase to 2.4a from 2a.The spacing that increases will provide more space to hardware on every side, and for example, more space will make that the design of ion source and workpiece processing target chamber is more convenient.
Second function be, the B that gradually changes (z) also offers the focusing force of broadband bundle on short-axis direction, and this function will specify in Figure 21.
In the ordinary course of things, the Distribution of Magnetic Field B that gradually changes (z) can realize through designing different pole surface shapes, this will be in Figure 16 illustrated in detail.
If focal spot size dw can further reduce, then mass resolution can also further improve.Figure 13 has represented that of the present invention another increases the technology of mass resolution: through changing the boundary shape in magnetic field, to reduce focal spot size.Zone 120 in magnetic field, magnetic field intensity can change along the z axle.In this example, be constant when establishing B (z) and be beginning, descend gradually along the z axle then.Input broadband bundle 108 102 gets into field regions 120 from the null field district.The border of field region is 131.Under such Distribution of Magnetic Field B (z), ion is walked elliptical orbit.
The cutting of such magnetic field boundaries can realize that this will explanation once more in the three-dimensional perspective of Figure 17 through the inlet face of cutting magnetic pole and the shape of exit face.The border cutting of this mode will increase the beam optics aberration, but because the cutting amount on border is very little, the aberration of increase will be little.
For the selection of the deflection angle of magnet of the present invention, 180 degree are tendentious deflection angles.Yet, depending on the requirement of system design and the requirement of system's assembling, the deflection angle of magnet of the present invention can be between 90 to 200 degree.
Deflection angle at Figure 10 is in the magnetic field of 180 degree, and the broadband bundle passes border 112 entering and walks out field region with vertical angle,, is defined as the incidence angle and the angle of emergence of zero degree here.
Figure 14 has explained that magnet of the present invention can be operated in deflection angle between 90 to 200 degree, if do like this, need make some modifications to system.At first, magnetic field boundaries 112 originally will move inwardly into new border 231, and in general border 231 is parallel to former border 112.Input broadband bundle 208 will will get into field region 220 through magnetic field boundaries 231 then from zero field regions 202 beginnings, and the central ion of broadband bundle is 203.Secondly, input broadband bundle 208 gets into field region with incidence angle α 1, central ion be 203 with the normal direction angle on border be incidence angle α 1.Broadband bundle 208 receives magnetic core logical circuit deflection to move to border 234, passes border 234 then and returns null field area 202.In general output border 234 is parallel to former border 112, depends on the position on output border 234, and the central ion 203 of output bundle is angle of emergence α 2 with the normal direction angle on border 234.Angle [alpha] 1 and α 2 are meant the incidence angle and the angle of emergence of broadband bundle, and broadband bundle 208 is (180-α 1-α 2) by the angle of magnetic core logical circuit deflection.
As shown in Figure 14,231 and 234 is to there is no need at same straight line, but they generally are parallel to initial border 112.For bigger angle [alpha] 1 or α 2 are arranged, depart from original border 112 in border 231 or 234 needs are more multidirectional.
Input broadband bundle 208 will form focal spot 130 at the top of track, and quality is that the ion of m will be through quality selection slit 137.Through slit 137, will revert to a broadband bundle 209 in outlet.Input bundle 208 is going out banded output bundle 209 of interruption-forming with deflection (180-α 1-α 2) degree.If input bundle is parallel broadband bundle, output bundle also will be a parallel broadband bundle.According to different angle [alpha] 1 and α 2, the width w2 of output band bundle can equal or be not equal to the width w1 of input tape bundle.
Based on same principle, also can design deflection angle greater than 180 degree.In this case, original border 112 will be outwards departed from the border 231 in magnetic field or 234, and one of them or two angles will be set to negative value.But overall system design possibly disliked the deflection angle greater than 180 degree.
Therefore in general, α 1, and α 2 spends 45 between-45 degree.When α 1=α 2=0, become the special circumstances of 180 degree deflections.
Figure 15 has represented the end view of a tendentious mass analyzing magmet of the present invention.In general, magnet is to its median surface 310 mirror images symmetry, and its first half generally is identical with Lower Half.Magnet comprises magnet 320, the lower coil 306 of last coil 305.Magnet by last magnetic pole 301, lower magnetic pole 302, return yoke 307, go up magnetic shield panel 303 and following magnetic shield panel 304 constitutes, magnet 320 is to use ferromagnetic material, for example, No. 1010 steels are made.Space between yoke distance 330 magnet the two poles of the earth 301 and 302, ion beam 340 is from pass through here.Ion beam 340 gets into yoke distance 330 from the opening between the magnetic shield panel 303 and 304 up and down.The magnetic field of deflected ion beam is produced through coil by electric current, and the direction in magnetic field is normally along vertical direction coordinate y.Yoke distance 330 is (not shown) in a vacuum chamber normally.Last coil 303 is predefined multi-layer conductive line windings, and coil has rectangular cross section usually, and normally around magnetic pole 301 coilings, coil shaped normally forms rigid body by resin impregnation.Lower coil 304 is with same manufacturing.These two coils can be connected in series to a power supply, or two power supplys, power supply of each coil.Electric current produces directed vertical magnetic field through coil in magnetic gap 330.
Figure 16 has represented the distribution along z of magnetic-field component By and Bz, can be clear that very much, because the existence of magnetic shield panel, magnetic field quickly falls near zero.
Distribution of Magnetic Field mainly is determined by the shape of magnetic pole 301 and 302, and two magnetic poles 301 and 302 generally are to median surface 310 mirror images symmetry.Change the surface configuration of magnetic pole 301 and 302, provide convenient effective means to change the issue in the magnetic field that forms.Pole surface 316 is on-plane surface normally, thereby to change the purpose that DISTRIBUTION OF MAGNETIC FIELD reaches the control beam path.Shown in figure 16, pole-face 316 is obtained along the straight expansion of x direction by pole-face curve 316.Through adjustment, can realize the distribution of magnetic-field component By, thereby satisfy the requirement of beam path control along z direction Any shape to this curve.In this tendentious structure, thereby extremely the surface is bent upwards magnetic-field component By is descended along z, and such field distribution will make ion pass through magnet with elliptic orbit.
Figure 16 has also shown magnetic-field component Bz in the distribution that departs from median surface 310 places, is noted that By and Bz are not same ratio in Figure 16.Magnetic-field component Bz has because the shape of pole surface 316 determines.Magnetic-field component Bz provides the focusing force of ion beam at vertical y coordinate direction, in general, disperses in this direction from the ion beam that ion source comes out, and this focusing force is vital for reducing the transmission loss of ion beam in magnet.The effect that magnetic-field component Bz is provided at the focusing force of vertical y coordinate direction also will be further explained in Figure 22.
Figure 17 has represented the cross-sectional view of this magnet one preferred embodiment, and the magnetic pole head is rectangle, and ion trajectory is also expressed.The border of magnetic pole 302 comprises magnetic pole front 311 and 312, magnetic pole side 321 and 323 and magnetic pole back 322, and coil 306 is along the path coiling around magnetic pole 302 peripheries.In this preferred embodiment, the broadband bundle 340 vertical magnet that get into, be deflected 180 degree after, form output broadband bundle 341.Figure 18 demonstrates 9 tracks at the ion of diverse location, goes out near the preparatory portion of track at the middle part of magnet, and the broadband bundle is converged into one and wants to restraint spot 342, thereby can settle quality analysis slit 318 to count bundle in the quality analysis broadband herein.
The surface 316 of magnetic pole 302 has been designed to certain curve form with the distribution along the z direction of the magnetic field that produces expectation.The front 311 and 312 of magnetic pole also can be designed to certain curve form, with the size of further reduction focal spot 342.Shape that can well-designed 311 and 312, the increasing of the system aberration that therefore brings with restriction.In this tendentiousness structure, the front 311 and 312 of magnetic pole is the shape of nonreentrant surface.Certainly, the front 311 and 312 of magnetic pole also can be the shape of nonreentrant surface.
Figure 18 has represented the cross-sectional view of another tendentious mass analyzing magmet of the present invention, and the shape of magnetic pole head is optimized with weight reduction according to the line envelope.The magnetic pole 302 of Figure 18 can be reduced to the magnetic pole 352,352nd of Figure 19, according to the shape in magnet of broadband line envelope and fixed.Magnetic pole 352 comprises magnetic pole front 311 and 312, utmost point limit 327 in the magnetic pole, magnetic pole side 325 and 326, magnetic pole back 322.Magnetic pole 352 is more effective than magnetic pole 302, and the zone, total magnetic field of magnetic pole 352 hangs down 25% than the total magnetic field district of magnetic pole 302 approximately.Coil 356 is along the path coiling around magnetic pole 352 peripheries, and coil 356 following paths are magnetic pole 352 on every side.The length overall of coil 352 is less than the length overall of coil 302, and this will reduce the ohmic loss of coil.Therefore, can reduce the total weight and the power consumption of magnetic pole to a great extent.
Figure 19 a and 19b have represented the three-dimensional perspective of the mass analyzing magmet of a tendentious Figure 19 of the present invention.Figure 19 a has shown complete magnet, and Figure 19 B has shown time half the magnet.Generally speaking, go up second magnet mirror image symmetry.Magnet comprise coil 355 and lower coil 356, one go up magnetic pole 351 and lower magnetic pole 352, magnet returns yoke 307 and goes up magnetic shield panel 303 and following magnetic shield panel 304.351,352,307,303 and 304 all is ferromagnetic material, and for example, No. 1010 steel are processed.Upwards the pole piece spacing of lower magnetic pole is to let ion beam pass through.In this structure, the input ion beam will be deflected 180 degree, and therefore, right half magnet of left half-sum generally is the mirror image symmetry.
The shape of pole surface 316 has been passed through careful design, moves with elliptic orbit with the guiding ion, and gives the focusing of ion beam with vertical direction. Magnetic pole 355 and 356 is by according to the shape of line envelope and cutting, to reduce integrated magnets weight and power consumption.Curve form can be adopted in magnetic pole front 311 and 312, with the size of further minimizing bundle spot.
Figure 20 has shown the ion trajectory on the long axis plane of broadband line, and the broadband line forms focal spot in magnet.The track that has shown 9 ions on the diverse location of the broadband of 400 mm wides bundle among the figure.Fine rule 401 is that quality is the ion trajectory of m, and thick line 402 is that quality is the track of the ion of 0.9m, can find out obviously that the ion with different quality forms the focal spot of oneself, and they can fully be separated by the quality analysis slit.
Figure 21 has shown the three-dimensional perspective of ion trajectory in magnet.The ion beam that comes out from ion source is usually at the y coordinate direction, and just the short-axis direction of bundle is sent out in the broadband.Input beam 411 has been represented a bundle group of intrafascicular certain position, broadband, and it has an angular distribution at vertical y coordinate direction,
Figure 21 has shown seven movement locus with ion of different angles y '.Because angular dispersed, ion beam group 411 enlarges on the y direction gradually, and simultaneously, it has received the effect of the focusing force in magnetic field again, and this focusing force is produced by magnetic-field component Bz.Shown in figure 16, Bz is because the form generation of pole surface 316.Along with the motion of ion, the effect of the focusing force of accumulation has overcome angular dispersed gradually, and at the lower semisection of magnet, ion beam group begins to shrink in the y direction.Finally, in the outlet of magnet, the focused beam acts that output ion beam group 412 becomes in the y direction.
Magnet the focus characteristics of vertical y direction can the design phase pass through the change of pole surface 316 is adjusted.It is worthy of note that y direction focusing and elliptical orbit all require the pole surface shape to change by certain mode, they require pole surface to change by same mode: shown in figure 16, and all require distance between two poles to increase gradually.
Figure 22 has represented the three-dimensional perspective of another preferred embodiment, to realize that general deflection angle is between 90 to 180 degree among Figure 14.In Figure 19 a and Figure 19 b, the deflection angle of magnet design is 180 degree, and the left side of magnet and right-hand part are onesize and mirror image is symmetrical.Yet, depend on the design of system and the requirement of system layout, the deflection angle of magnet maybe with between 90 to 200 the degree between.The requirement of this general deflection angle can realize through the left and right sides mirror image symmetry of cancellation magnet.Because the up-down symmetry of magnet, Figure 22 only show half the down magnet.Magnetic pole 352 comprises left magnetic pole 371 and right magnetic pole 372, and left magnetic pole 371 is being connected the connection of surperficial 378 places with right magnetic pole 372.In general, the different sizes of left magnetic pole with right magnetic pole, surface 378 is also asymmetric with respect to connecting.Special situation is, left magnetic pole is identical with right magnetic pole size, and with respect to connecting surperficial 378 left-right symmetric.Coil 376 is around the shape coiling of left magnetic pole 371 and right magnetic pole 372.Magnetic shield panel 304 and 304a are with part wound coil 376, to reduce the fringing field zone.For the magnet of non-180 degree deflection angles, input bundle will get into magnet with angle, and output bundle is also with another angle outgoing magnet.
In order this quality analysis magnet to be applied to practice, specially made a kind of implanter system that is used for broadband ion beam, Figure 23 is the calcspar that adopts a broadband line ion implantation machine system of magnet of the present invention, it has adopted 180 degree deflections.This ion implant systems comprises an ion source 500, extraction electrode unit 501, first uniformity and angle correct unit 502; Mass-synchrometer magnet unit 512,504, the second uniformitys of quality analysis slit and angle correct unit 505; A selectable decelerator unit 506; Target workpiece and workpiece delivery unit 507, beam current measurement diagnosis unit 508, these unit all are arranged in the vacuum chamber (not shown).Ion implant systems also comprises a control unit 520.Ion source 500 can be Bernas Bei Nasi type ion source or radio frequency type ion source, and from being the required consideration that will produce large-area plasma of broadband ion beam, perhaps radio frequency type ion source is tendentious selection.Radio frequency type ion source comprises the RF excited source, radio-frequency antenna, the plasma chamber that has elongated with lead to into wherein generation plasma used gas.To can here not explain about ionogenic details, but U.S. Patent number 6664548 can be used as a such ion source example of design.The source housing of ion source 500 has the opening of an elongation, and the width of the x direction of this opening is more much bigger at y direction height than it.Extraction electrode device 501 is to be used for obtaining ion beam from the elongation opening of source housing, and the extraction electrode device generally includes 2 or more a plurality of electrodes, and extraction electrode all has and the similar elongation opening of the elongation opening of source housing.The extraction electrode device generally all is connected with high-voltage power supply, obtains ion beam through electric field from the elongation opening of source housing, and the ion beam of drawing generally is the vertical direction of parallel extraction electrode opening, like the z direction of Figure 23.Thus, produce broadband bundle 510, broadband Shu Tongchang has the square-section, and its long axis direction is in the x of Figure 23 direction.The width of the broadband of drawing bundle is usually greater than the diameter of target workpiece.
Before getting into mass analyzing magmet 503, the band bundle will be through first uniformity and angle correct unit 502.Angle and the position that each intrafascicular bundle of broadband is rolled into a ball can be adjusted through the electric field or the magnetic field of part in this position, unit.
Be advanced into mass analyzing magmet 503 before the broadband bundle will continue, magnet adopts magnet of the present invention, and magnet is existing detailed description in aforementioned chapters and sections, and tendentious deflection angle is 180.The broadband bundle focuses on the A/F that 504, one mechanical installation adjusting devices of a narrow quality analysis slit are regulated slit at the mass analyzing magmet inner focusing, and the ion with the quality of preestablishing could pass through slit.Ion through slit is expanded then, forms the broadband bundle in the magnet exit.The center of 511 expression broadbands bundle, the border of 512 and 513 expression broadbands bundle.
After coming out from mass analyzing magmet, the broadband bundle will be through second uniformity and angle correct unit 505.Angle and the position that each intrafascicular bundle of broadband is rolled into a ball can be adjusted through the electric field or the magnetic field of part in this position, unit.Local electric field or magnetic field can be controlled by transmitted beam flow measurement diagnosis unit 508.The current density and the angle of beam current measurement diagnosis unit 508 measurement broadbands bundles, measurement result are used to regulate the electric field or the magnetic field of the part of the uniformity and angle correct unit 505 or 502.Like this, the broadband bundle just can obtain correcting in the current density at target workpiece 507 places and the uniformity of angle, to reach the low level of expectation.U.S. Patent number provides for No. 7078713 several about the uniformity and angle correct cell design example.
In the process that broadband Shu Jixu moves ahead, keep its broadband shape, when broadband ion beam 514 reached target workpiece 507, it had enough width can cover the diameter or the width of whole target workpiece always.Target workpiece is passed through this broadband ion beam then along one or many ground, a path, the ion of uniform dose just can get into surface of the work.
Target workpiece (normally silicon wafer) and delivery unit 507 (not shown)s generally include electrostatic chuck and pouring stand.Pouring stand carries the motion that silicon wafer is done both direction, and these motions normally make progress and downward motion (promptly with respect to the direction that passes in and out paper).Delivery unit 507 also comprises silicon wafer switch room and robot arm, robot arm move silicon wafer from the silicon wafer switch room to pouring stand.
Beam current measurement diagnosis unit 508 comprises some instruments.An instrument is the line rubbish cup after the target workpiece, and it absorbs the ion beam that no longer needs; Other instruments such as faraday's beam profile measuring equipment are positioned at the position near target workpiece, and it scans the uniformity of whole ion beam dimension transverse with measurement broadband bundle, and provides measurement data to get back to beam current density controller 520.Another instrument is a plurality of Faraday cups, and the position is near target workpiece, and its scanning detects the density distribution of broadband Shu Shiji through the broadband bundle.Another instrument is to measure the ion beam current angular distribution.The instrument that also has other, in order to the monitor beam rheologyization, purpose is the process that the control ion injects.
The system of control unit 520 each unit of control running, it also regulates each unit according to the measurement result of beam diagnostics unit 508.
This system can further comprise an optional deflection deceleration unit 506 in order to the production low energy ion beam, for example, and the boron ion beam from 0.1KeV to 5KeV.The details of deceleration unit can be described, but U.S. Patent number 6441382 is design examples of such deflection decelerator here.So-called deflection deceleration unit is to accomplish two functions simultaneously: deflection and deceleration.Usually, the low energy high-current ion beam is to obtain through the energy that lowers high energy ion beam, such as, low energy ion beam (for example 0.1 to 5keV) is slowed down from high energy ion bundle (for example 5 to 20KeV) and is obtained.Yet normal straight line deceleration high energy beam fails to be convened for lack of a quorum and produces the high energy neutral particle.Adopt the deflection deceleration unit, ion beam changes the direction of motion once or twice in the process of slowing down, and like this, the high-energy neutral particle can fall with the ion beam separating and filtering.Figure 23 a has shown the effect of deflection deceleration unit, the central beam track 511 of system be deflected deceleration unit 506 in the deflection of y direction an angle.Target workpiece 507 is reorientated according to the deflection angle that the deflection decelerator is introduced with beam diagnostics unit 508.
For utmost point low energy ion beam, the mass analyzing magmet of little aberration is extremely valuable.When deceleration device moved, the aberration of magnet system can be amplified by deceleration system and increase, and this is that the present high current ion implanter of commodity wide beam can not produce one of reason of restrainting in low-yield broadband effectively.Magnet of the present invention makes the ion beam that produces almost nil aberration, and therefore, deceleration unit will be used and produce high-quality low-yield broadband ion beam.
Figure 24 is the sketch map that adopts another broadband line ion implantation machine system of magnet of the present invention, and it has adopted non-180 degree deflections.Mass analyzing magmet can be 180 degree deflections, also can right and wrong 180 degree deflections.For the deflection angle of 180 degree, ion source and target workpiece are arranged to be parallel to magnet.For the deflection angle of non-180 degree, ion source and target workpiece are arranged to be not parallel to magnet.The bundle from broadband that ion source comes out gets into magnet with angle [alpha] 1, and the broadband bundle comes out from magnet with another angle [alpha] 2.α 1 and α 2 are defined as the bundle incidence angle and the angle of emergence respectively.Each system unit of all the other each system units and Figure 23 is similar.
In the occasion of some application, hope that ion implantation device is designed to provide the broadband bundle, the round dot bundle can also be provided, and can between broadband bundle and round dot bundle, switch.The definition here is, the width of broadband bundle is greater than the characteristic size (diameter or width) of workpiece, and the width of round dot bundle is less than the characteristic size (diameter or width) of workpiece.
Figure 25 is the sketch map that adopts another broadband line ion implantation machine system of magnet of the present invention, and it has adopted Pernod Paderewski level Four magnet to enlarge line to form a wideer broadband bundle.Figure 26 has represented in the system of Figure 25 how to utilize Pernod Paderewski level Four magnet compression line to form a narrower line.
Among Figure 25, the width of its ion source 500 is narrower with respect to the characteristic size of target workpiece, and ion source can be the indirect heating type hot-cathode ion source, or is called Bernas Bei Nasi type ion source, and the ion beam of drawing is a parallel beam 510.Parallel beam 510 is through magnet 503 of the present invention, through quality analysis, forms parallel beam 802 again in the outlet of magnet 503.In the downstream of magnet 503, be provided with two angle devices 801 and 805, this angle device can be, for example, Pernod Paderewski quadrupole magnet.First quadrupole magnet 801 can be operated in the pattern of defocusing, and it can increase the angle of divergence of ion beam, and the size of its angle of divergence is directly proportional with the distance of ion with beam center 511, and parallel beam 802 becomes angular-spread beam 803.Behind a segment distance; The width of angular-spread beam 803 is increased to the width of expectation; Reach 805, the second quadrupole magnets 805 of second quadrupole magnet and be operated in focusing mode, it proofreaies and correct the angle of divergence of ion beam; And being transformed into a parallel beam 804 to ion beam, the width of parallel beam 804 surpasses the characteristic size (diameter or width) of target workpiece 507 (silicon wafer or glass plate).This ion implantation machine system also can further comprise selectable deflection deceleration unit 506 production low energy ion beam.
Figure 26 has represented in the system of Figure 25 how to utilize Pernod Paderewski level Four magnet compression line to form a narrower line.First quadrupole magnet 801 can be operated in focusing mode, and it can increase the focusing angle of ion beam, and its size that focuses on the angle is directly proportional with the distance of ion with beam center 511, and parallel beam 802 becomes focused beam acts 813.Behind a segment distance; The width of focused beam acts 803 is reduced to the width of expectation; Reach 805, the second quadrupole magnets 805 of second quadrupole magnet and be operated in the pattern of defocusing, it proofreaies and correct the focusing angle of ion beam; And being transformed into a round dot bundle 814 to ion beam, the width of round dot bundle 814 is much smaller than the characteristic size (diameter or width) of target workpiece 507 (silicon wafer or glass plate).
Figure 27 is the sketch map that adopts another broadband line ion implantation machine system of magnet of the present invention, and it adopts rotatable magnetic pole head and a Pernod Paderewski level Four magnet to enlarge line to form a wideer broadband bundle.Figure 28 has represented in the system of Figure 27 how to utilize rotatable magnetic pole head and a Pernod Paderewski level Four magnet compression line to form a narrower line.
Among Figure 27, the width of its ion source 500 is narrower with respect to the characteristic size of target workpiece, and ion source can be the indirect heating type hot-cathode ion source, or is called Bernas Bei Nasi type ion source, and the ion beam of drawing is a parallel beam 510.Parallel beam 510 is through magnet 503 of the present invention, through quality analysis, forms broadband bundle 620 again in the outlet of magnet 503.Magnet of the present invention has another characteristics, and the part 601,601 of the magnetic pole of its outlet half one is called movable rotary pole head, and it can be with respect to 620 rotations (the rotating machinery structure does not show) of outlet magnetic pole.When the angle of rotary pole head 601 and magnetic pole 620 is 0 when spending, outlet line 620 is parallel broadband bundles.When the angle of rotary pole head 601 and magnetic pole 620 is non-zero degree, outlet line 620 will not be a parallel beam, and the size of its angle of divergence or angle of flare is directly proportional with the distance of ion with beam center 511.
In Figure 27, the angle that is provided with of rotary pole head 610 is operated in the pattern of defocusing, and it makes outlet bundle 620 become angular-spread beam 602; The size of its angle of divergence is directly proportional with the distance of ion with beam center 511, and behind a segment distance, the width of angular-spread beam 602 is increased to the width 603 of expectation; Reach an angle device 605 that is provided with in the downstream of magnet 503; This angle device can be, for example, and Pernod Paderewski quadrupole magnet.This quadrupole magnet 605 is operated in focusing mode, and it proofreaies and correct the angle of divergence of ion beam, and is transformed into a parallel beam 604 to ion beam, and the width of parallel beam 604 surpasses the characteristic size (diameter or width) of target workpiece 507 (silicon wafer or glass plate).This ion implantation machine system also can further comprise selectable deflection deceleration unit 506 production low energy ion beam.
Figure 28 has represented in the system of Figure 27 how to utilize rotatable magnetic pole head and a Pernod Paderewski level Four magnet compression line to form a narrower line.The angle that is provided with of rotary pole head 610 is operated in focusing mode, and it makes outlet bundle 620 become focused beam acts 702, and its size that focuses on the angle is directly proportional with the distance of ion with beam center 511; Behind a segment distance; The width of focused beam acts 702 is reduced to the width 703 of expectation, reaches an angle device 605 that is provided with in the downstream of magnet 503, and this angle device can be; For example, Pernod Paderewski quadrupole magnet.This quadrupole magnet 605 is operated in focusing mode, and it proofreaies and correct the angle of divergence of ion beam, and is transformed into a narrow parallel beam 704 to ion beam, and the width of narrow parallel beam 704 is much smaller than the characteristic size (diameter or width) of target workpiece 507 (silicon wafer or glass plate).
Ion implant systems of the present invention is compared with the big current ion injected system that has had, and has remarkable advantages.The system aberration of ion implant systems of the present invention is very little, and the present invention is a semiconductor industry, is infused in the product that 300 millimeters application and following 450 millimeters application provides a brilliance in particular for low energy ion beam.Outside deionization injected, the present invention also can be used for plated film or carries out the surface-treatment applications of other types.In addition, can produce 1000 millimeters or wideer broadband bundle, therefore, this invention also can be used for other application, and for example, surface coating forms optical filter coating or dissimilar surface treatment such as glass, metal or other material etc.
Magnet system of the present invention provides ion source to arrive target workpiece (like silicon wafer) 1 to 1 image conversion imaging, thereby promotes the conforming control of technological parameter such as dose uniformity and injector angle.This invention can provide the uniform broadband ion beam of density distribution of about 400 millimeters or above (for example, 550 millimeters) of transverse width, can realize even injection through the one-dimensional scanning of silicon wafer (as 300 millimeters or 450 millimeters) like this.In addition, this invention provides a bigger ion beam cross section regional through the major part of magnet, and like this, space charge density is little, and this is very beneficial for the transmission of low energy ion beam.Another advantage is that the transmission range total path length of ion from the ion source to the target workpiece almost is constant.In addition, each ion trajectory almost is identical, and therefore, the transportation of broadband line all is identical at every bit, thereby can not produce the consistency that ion injects.In addition, this invention can help to prevent to reach from the implanter upper reaches dust pollution thing of target workpiece.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.For the those of ordinary skill of technical field under the present invention, under the prerequisite that does not break away from the present invention's design, can also make some simple deduction or replace, all should be regarded as belonging to protection scope of the present invention.
Claims (6)
1. a mass analyzing magmet that is used for broadband ion beam is characterized in that, the coil that comprises magnet and be connected with power supply; Said magnet comprises magnetic pole, yoke and magnetic shield panel; Said yoke is connected said magnetic pole with said magnetic shield panel; Said magnetic pole comprises magnetic pole and lower magnetic pole; Said magnetic shield panel comprises magnetic shield panel and following magnetic shield panel; Said going up is provided with the magnetic field space that supplies broadband ion beam to pass through with a fixed line between magnetic pole and lower magnetic pole; Said coil comprises coil and lower coil; Saidly go up coil generation lets the magnetic field of broadband ion beam steering with lower coil; Said upward coil and lower coil are wrapped in said going up on magnetic pole and the lower magnetic pole respectively; Said magnet is provided with the quality selection slit; Said quality selection slit is positioned at the middle part of said magnet and lets its desired ion pass through.
2. according to the said analyzing magnet that is used for broadband ion beam of claim 1, it is characterized in that: said upward magnetic pole and said lower magnetic pole comprise first half and latter half of respectively; Said first half and latter half of linking together; Said first half and latter half of joint face symmetry with them or asymmetric; Said first half by ion beam from it while getting into magnet and from said latter half of going out.
3. according to the said analyzing magnet that is used for broadband ion beam of claim 1, it is characterized in that: the said magnetic shield panel of going up is connected with the said magnetic pole of going up; Said magnetic shield panel down is connected with said lower magnetic pole; The said said pole parts that goes up of coil encircling that goes up; Said lower coil is around said lower magnetic pole part; The said surface design that goes up magnetic pole and lower magnetic pole is for producing the surface that uniform magnetic field distributes or non-uniform magnetic-field distributes; Said uniform magnetic field distributes and will guide ion to equate the curve track motion of deflection radius; Said non-uniform magnetic-field distributes and will guide the curve track motion of ion with unequal deflection radius.
4. according to the arbitrary said analyzing magnet that is used for broadband ion beam of claim 1-3; It is characterized in that: the inside of said magnet is provided with the focal spot district; Said focal spot district forms for the broadband ion beam that passes through is focused at the middle part of said magnet, and said quality selection slit is arranged on the focal spot district.
5. according to the said analyzing magnet that is used for broadband ion beam of claim 4, it is characterized in that: said upward magnetic pole and the said corresponding limit of magnetic shield panel of going up are the entering limit of broadband ion beam or go out trimming that it is plane or curve form; Said lower magnetic pole and the said corresponding limit of magnetic shield panel down are the entering limit of broadband ion beam or go out trimming that it is plane or curve form; Said curved surface is nonreentrant surface or recessed surface configuration; A said fixed line is similar circle or similar oval route.
6. according to the said analyzing magnet that is used for broadband ion beam of claim 5, it is characterized in that: said end of going up magnetic pole and lower magnetic pole is respectively equipped with movable rotary pole head, and said movable rotary pole head rotates a certain angle.
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| CN105764229A (en) * | 2016-05-03 | 2016-07-13 | 中国原子能科学研究院 | Method for suppressing magnet fringing field |
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| CN1101593C (en) * | 1995-10-19 | 2003-02-12 | 艾克塞利斯技术公司 | Method and apparatus for ion beam formation in ion implanter |
| CN1193401C (en) * | 1999-10-05 | 2005-03-16 | 瓦里安半导体设备联合公司 | High transmission, low energy beamline architecture for ion implanter |
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|---|---|
| CN101692369A (en) | 2010-04-07 |
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