CN103247505B - For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system - Google Patents
For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system Download PDFInfo
- Publication number
- CN103247505B CN103247505B CN201310089797.2A CN201310089797A CN103247505B CN 103247505 B CN103247505 B CN 103247505B CN 201310089797 A CN201310089797 A CN 201310089797A CN 103247505 B CN103247505 B CN 103247505B
- Authority
- CN
- China
- Prior art keywords
- ion beam
- arc chamber
- broadband
- ion
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 106
- 238000010438 heat treatment Methods 0.000 title claims abstract description 23
- 238000009826 distribution Methods 0.000 claims abstract description 67
- 238000000605 extraction Methods 0.000 claims description 21
- 239000000696 magnetic material Substances 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 208000002925 dental caries Diseases 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 230000006872 improvement Effects 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 230000009123 feedback regulation Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The present invention relates to semiconductor manufacturing facility, it discloses a kind of beam ion source, indirect-heating broadband for ion beam system, comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, the magnetic shielding device of Distribution of Magnetic Field scope in restriction source magnet downstream, the internal electrode being placed on described arc chamber inside and the power supply of powering to described arc chamber, two indirectly heated cathode, window frame source magnet and the internal electrode that is placed on described arc chamber inside.The invention has the beneficial effects as follows: by adopting two cathodes heated indirectly by an el, there is the source magnet of adjustable local magnetic field, there is adjustable multiple electrode, thus reach the object of the plasma density distribution in transfer arc chamber further.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, particularly relate to a kind of beam ion source, indirect-heating broadband for ion beam system and broadband ion beam system.
Background technology
Ion implantation is a kind of processing procedure atom or molecule being introduced target workpiece substrate, and this processing procedure is commonly called doping, and it can change the attribute of material.Ion implantation is a processing procedure common in the manufacture of large scale integrated circuit, ion implantation also can be used for the manufacturing process of solar battery sheet, and ion implantation also can be used for the manufacturing process relevant to manufacturing optical instrument or display instrument (as flat-panel monitor) etc. such as thin film deposition.
A typical ion implantor comprises the ion source that produces ion beam; Ion beam is selected, shaping and transmission system, and it comprises the ion beam quality analytical system using magnetic field; And a target chamber, for the treatment of the semiconductor wafers by injecting ion beam.
Ion source is the important component part of ion implant systems, and ion source is generally used for producing stable different types of ion beam, and under different extraction voltages, these ion beams can have different energy.
Fig. 1 describes the ionogenic typical case of a kind of so-called indirectly heated cathode be widely used in ion implant systems and embodies.This ion source comprises the arc chamber 14 that has conductive chamber wall, has a cathodes heated indirectly by an el 101 in one end of arc chamber 14, the filament 11 that cathodes heated indirectly by an el 101 comprises a negative electrode 12 and is provided at its inner portion.Filament 11 is connected to first power supply 31, and power supply 31 produces high electric current, and this high electric current can heat tungsten filament 11 to high temperature to produce thermionic emission.Second power supply 32 forms bias voltage between tungsten filament 11 and negative electrode 12, and the thermal electron that this bias voltage accelerates tungsten filament 11 moves to negative electrode 12, and heated cathode 12.Negative electrode 12 is entered to the thermal electron of arc chamber 14 by heating rear generation.3rd power supply 33 forms bias voltage between negative electrode 12 and arc chamber 14, and the thermal electron that this bias voltage accelerates negative electrode 12 enters arc chamber 14.Arrange reflecting electrode 13 at the other end of arc chamber 14, the setting of the current potential of reflecting electrode 13 is identical with the status of negative electrode 12 or close, and the effect of reflecting electrode is by the electron reflection arcing back room in arc chamber.A source magnet sets up in the inside of arc chamber 14 electronics that magnetic field B comes bound arc indoor.Typical source magnet is a dipolar magnet for a super large caliber, and this source magnet is usually included in the magnetic pole 22 and 24 at arc chamber two ends, and around magnetic pole 22 days and 24 coils 21 and 23.A source of the gas (not shown) can provide the gas of dopant species, and such as, BF3, PH3orAsH3 etc., gas enters arc chamber 14 through air inlet.Electronics produces plasma 41 by the interaction with gas molecule in arc chamber.Arc chamber 14 front end 16 has one to draw elongated hole footpath 41, and a set of extraction electrode (not shown) can draw ion beam 42 by drawing aperture 41 from plasma 41.Typical indirect-heating ion source produces the wide ion beam of 50-100mm usually.
Broadband ion beam has been used to the ion implantation that modern high current implanters carries out 300 millimeters of wafers, sees US Patent No. 5350926.There, broadband bundle is that the small size ion beam produced by the ion source of a small size (comparing with large wafer size) is expanded and formed.In order to reduce the complexity of this implanter system, people wish to produce carefully wide broadband ion beam.Therefore, preferably provide a uniform broadband ion beam of density distribution by beam ion source, broadband, this application of injection at following 450mm wafer or cell piece particularly meaning is given prominence to.In order to produce 300 millimeters or wider ion beam from ion source, need the technology of ion source of improvement.
Summary of the invention
In order to solve the problems of the prior art, the invention provides a kind of beam ion source, indirect-heating broadband for ion beam system, solving in prior art and there is implanter system complexity and the problem that the uniform broadband ion beam of density distribution cannot be provided.
The invention provides a kind of beam ion source, indirect-heating broadband for ion beam system, comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, restriction source magnet downstream the magnetic shielding device of Distribution of Magnetic Field scope, the internal electrode being placed on described arc chamber inside and the power supply of powering to described arc chamber, two indirectly heated cathode, window frame source magnet and the internal electrode that is placed on described arc chamber inside.
As a further improvement on the present invention, described arc chamber has one the 100 millimeters microscler cavitys to 1000 mm sizes at length direction, and the one side of described arc chamber has one to have 100 millimeters of microscler extraction openings to 1000 mm sizes so that ion is drawn from described microscler extraction opening at length direction.
As a further improvement on the present invention, described pair of indirectly heated cathode is made up of two indirectly heated cathodes, and each indirectly heated cathode is arranged on one end of described arc chamber; Described indirectly heated cathode comprises the negative electrode of tubular, filament and bracing or strutting arrangement, this bracing or strutting arrangement supports negative electrode and the filament of described tubular, one end of the negative electrode of described tubular is unlimited, and the other end of the negative electrode of described tubular comprises a conductivity cover and extends in arc chamber for launching the electronics of ionize.
As a further improvement on the present invention, described multi-channel gas inlet device is arranged on the inside of described arc chamber, and in the face of gas supply pipe line, the multi-channel gas entrance of described multi-channel gas inlet device has the length direction along arc chamber to arrange multiple equally distributed hole, is reallocated and enters arc chamber after the multi-channel gas entrance of the dopant gas molecules entered from described gas supply pipe line by described multi-channel gas inlet device.
As a further improvement on the present invention, described arc chamber inside arranges multiple electrode along its length, the shape of each electrode is similar to the interior shape of arc chamber, each electrode is connected respectively to independently voltage source, and the polarity of the supply voltage of each electrode and voltage strength adjust separately to adjust the plasma density in arc chamber.
As a further improvement on the present invention, described restriction source magnet downstream the material normally plate made of magnetic material or the hollow box of magnetic shielding device of Distribution of Magnetic Field scope, described restriction source magnet downstream the magnetic shielding device of Distribution of Magnetic Field scope be arranged on the downstream of described window frame shape source magnet, be used for magnetic field, restriction source downstream Distribution of Magnetic Field scope.
As a further improvement on the present invention, described window frame shape source magnet comprises a window frame shape yoke, a pair main coil and one group of lateral coil, and this window frame shape yoke has long a pair limit and pair of short edges, and long limit is greater than minor face; Multiple power supply powers to described main coil and described lateral coil.
As a further improvement on the present invention, described main coil is wound on the long limit of described window frame shape yoke, and main coil is connected in series and by a current source supply, main coil is arranged on the long limit of described window frame shape yoke between two parties; Described lateral coil is wrapped in the long limit of described window frame shape yoke and is separately positioned on two ends of described main coil, and lateral coil is connected in series, and by a current source supply, or each lateral coil can respectively by independent current source supply.
As a further improvement on the present invention, described main coil comprises multiple independent small coil further, and each independent small coil is connected to an independently current and power supply, and polarity and the intensity of the current and power supply of each independent small coil adjust; Magnetic material cover is inserted in space between each adjacent small coil.
Invention also provides a kind of broadband ion beam system, comprise for the beam ion source, indirect-heating broadband of ion beam system, extraction electrode unit, ion beam transport device, ion beam measuring unit and target target chamber, broadband ion beam is to the surface of target for transmitting, focusing on, described in acceleration or deceleration for described ion beam transport device, and the beam ion source, indirect-heating broadband for ion beam system is drawn by extraction electrode unit, carried out carrying and arrive target target chamber with ion beam transport device; Described ion beam measuring unit measures the angle of the ion beam current of ion beam, ion beam current density distribution and ion beam.
As a further improvement on the present invention, the described beam ion source, indirect-heating broadband for ion beam system comprises arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, the magnetic shielding device of Distribution of Magnetic Field scope in restriction source magnet downstream, the internal electrode being placed on described arc chamber inside and the power supply of powering to described arc chamber, two indirectly heated cathode, window frame source magnet and the internal electrode that is placed on described arc chamber inside.
As a further improvement on the present invention, described ion beam transport device comprises mass analysis cell, deflection unit and accelerator module; Described in described ion beam transport device transmission, focusing, acceleration or deceleration, broadband ion beam is to target surface; Described ion beam measuring unit measures the ion beam current of ion beam, the angle of ion beam current density distribution and ion beam, measurement data according to ion beam current density distribution is used to the main coil of FEEDBACK CONTROL window frame shape magnet, the adjustment of lateral coil, or the adjustment of the multiple internal electrode of FEEDBACK CONTROL is to obtain uniform broadband ion beam
The invention has the beneficial effects as follows: by adopting two cathodes heated indirectly by an el, there is the source magnet of adjustable local magnetic field, there is adjustable multiple electrode, thus reach the object of the plasma density distribution in transfer arc chamber further.
[accompanying drawing explanation]
Fig. 1 shows the cathodes heated indirectly by an el ion source that is widely used in ion implantor;
Fig. 2 shows one of characteristic that beam ion source, broadband of the present invention has, two cathodes heated indirectly by an el and distributed inlet duct;
Fig. 3 shows one of characteristic that beam ion source, broadband of the present invention has, window frame shape source magnet and its two main coils and four lateral coils;
Fig. 4 shows the main coil of the window frame shape source magnet illustrated and the effect of sideline circle;
Fig. 5 shows one of characteristic that beam ion source, broadband of the present invention has, the window frame shape source magnet of open-type;
Fig. 6 shows one of characteristic that beam ion source, broadband of the present invention has, and window frame shape magnet has multiple small coil;
Fig. 7 shows one of characteristic that beam ion source, broadband of the present invention has, another kind of window frame shape magnet;
Fig. 8 shows one of characteristic that beam ion source, broadband of the present invention has, and multiple electrode is placed in arc chamber inside;
Fig. 9 shows an ion beam system comprising beam ion source, broadband of the present invention.
[embodiment]
Illustrate below in conjunction with accompanying drawing and embodiment the present invention is further described.
Fig. 2 shows a beam ion source, broadband with two cathodes heated indirectly by an el of the present invention; This ion source comprises the arc chamber 14 that has conductive chamber wall, and arc chamber 14 obviously increases at its length direction, and its length is 100-1000mm.A cathodes heated indirectly by an el 101 is had, the filament 11 that cathodes heated indirectly by an el 101 comprises a negative electrode 12 and is provided at its inner portion in one end of arc chamber 14.Filament 11 is connected to first power supply 31, and power supply 31 produces high electric current, and this high electric current can heat tungsten filament 11 to high temperature to produce thermionic emission.Second power supply 32 forms bias voltage between tungsten filament 11 and negative electrode 12, and the thermal electron that this bias voltage accelerates tungsten filament 11 moves to negative electrode 12, and heated cathode 12.Negative electrode 12 is entered to the thermal electron of arc chamber 14 by heating rear generation.3rd power supply 33 forms bias voltage between negative electrode 12 and arc chamber 14, and the thermal electron that this bias voltage accelerates negative electrode 12 enters arc chamber 14.
The key producing beam ion source, uniform broadband is that the plasma density in microscler arc chamber needs evenly along its length.One of technology improving the uniformity arranges cathodes heated indirectly by an el at the other end of arc chamber.
Have a cathodes heated indirectly by an el 102 at the other end of arc chamber 14, cathodes heated indirectly by an el 102 cathodes heated indirectly by an el 102 is substantially identical with cathodes heated indirectly by an el 101.The filament 11a that cathodes heated indirectly by an el 102 comprises a negative electrode 12a and is provided at its inner portion.Filament 11a is connected to first power supply 31a, and power supply 31a produces high electric current, and this high electric current can heat tungsten filament 11a to high temperature to produce thermionic emission.Second power supply 32a forms bias voltage between tungsten filament 11a and negative electrode 12a, and the thermal electron that this bias voltage accelerates tungsten filament 11a moves to negative electrode 12a, and heated cathode 12a.Negative electrode 12 is entered to the thermal electron of arc chamber 14 by heating rear generation.Second power supply 32a can be independently, or is exactly power supply 32.3rd power supply 33 forms bias voltage between negative electrode 12a and arc chamber 14, and the thermal electron that this bias voltage accelerates negative electrode 12a enters arc chamber 14.
A source of the gas (not shown) can provide the gas of dopant species, and such as, BF3, PH3orAsH3 etc., gas enters arc chamber 14 through air inlet.
The key producing beam ion source, uniform broadband is the plasma producing uniform density along its length in microscler arc chamber 14.An embodiment of the uniformity of the plasma of a kind of raising in the inside of arc chamber is the multi-channel gas entrance that will design.Multi-channel gas entrance is arranged on the inside of arc chamber, and faced by the outlet of gas supply pipe line.Multi-channel gas entrance has multiple equally distributed series of holes, and series of holes is equally distributed along the direction of elongate of arc chamber.The dopant gas molecules entered from described gas line is by being reallocated after multi-channel gas entrance by entering arc chamber 14 after series of holes.By this way, dopant gas molecules will be distributed evenly in arc chamber 14.Consequently, mutually collide from the electronics of cathode emission and equally distributed dopant gas molecules, produce uniform plasma 41.
Arc chamber 14 front end 16 has one to draw elongated opening 41, draws elongated opening 41 and is of a size of 100-1000mm at its length direction.A set of extraction electrode (not shown) can draw ion beam 42 by drawing opening 41 from plasma 41.
A source magnet sets up in the inside of arc chamber 14 electronics that magnetic field B comes bound arc indoor.Because arc chamber is very long at its length direction, in order to obtain at the uniform plasma of length direction, magnetic field B is preferably uniformly distributed in the distribution of length direction.
Fig. 3 shows one of characteristic that beam ion source, broadband of the present invention has, window frame shape source magnet and its two main coils and four sidelines circles.Source magnet 106 is window frame type magnets, and ionogenic shown in ion source and Fig. 2 is identical, comprises microscler arc chamber 14, cathodes heated indirectly by an el 101 and 102, microscler extraction opening 16, the plasma 41 produced in arc chamber, the ion beam 42 of extraction.Arc chamber 14 be arranged on ion source magnet 106 produce field region within.The center of microscler arc chamber 14 is arranged on the immediate vicinity of source magnet 106.
The key of producing uniform Broad beam ion source produces equally distributed plasma at the long side direction of the arc chamber 14 on edge.The mode improving the uniformity of the plasma of the inside of arc chamber is design source magnet, and this source magnet can produce the uniform magnetic field Bx of the long side direction along arc chamber 14, and in the present invention, source magnet 106 adopts window frame type magnet.
The yoke of this window frame shape magnet adopts soft iron manufacture usually.The long limit 107 of yoke, the minor face 109 of yoke, long limit 107 is far longer than minor face 109 usually.
Source magnet has two groups of coils, main coil and lateral coils.Their coils respectively around the long limit of magnet framework.Main coil 401 and 402 around long limit 107.Main coil 401 and 402 is connected in series, and is powered by current source I11.Main coil 401 and 402 produces magnetic field Bx, and main coil is normally arranged on long limit 107 between two parties, and the design of the size of main coil is to provide better equally distributed magnetic field Bx on long side direction.
Lateral coil has four coils 403,404,405 and 406.The long limit 107 that lateral coil 403 and 404 is wound around also is separately positioned on two ends of main coil 401, the long limit 107 that lateral coil 405 and 406 is wound around also is separately positioned on two ends of main coil 402, lateral coil 403,404,405 and 406 can be connected in series, and are powered by current source I12, lateral coil 403,404,405 and 406 also can be powered by independent current source (not demonstrating in figure) respectively.As one of feature of the present invention, the introducing of lateral coil is the distribution in order to adjust and change the magnetic field Bx that main coil produces.The adjustment of the distribution of magnetic field Bx, can be conducive to generation along the long side direction of arc chamber 14 evenly the plasma 41 of distribution.
In one embodiment:
The ion source of broadband bundle may comprise one or two indirectly heated cathode, and each negative electrode is arranged on one end of arc chamber.
The air inlet of arc chamber is many air inlets, and many air inlets are almost uniformly distributed at the length direction of arc chamber, thus makes the gas pressure intensity in arc chamber even.
The ion source of broadband bundle may comprise a source magnet, and this source magnet can be window frame shape magnet.It has two coil groups, often organize coil respectively around the long limit of magnet framework.
Arc chamber is in the field region of source magnet.
Each coil groups can be made up of a main coil and four lateral coils, and each lateral coil can be connected to an independently current and power supply, and the polarity of the current and power supply of each separate sides coil and intensity can be different.
The polarity of the electric current of each lateral coil and intensity can carry out Long-distance Control, to regulate the Distribution of Magnetic Field of field region, thus change the distribution of plasma density in arc chamber.
Each coil groups can be made up of multiple little separate component coil, each independently small coil can be connected to an independently current and power supply, the polarity of the current and power supply of each independent small coil and intensity can be different.
The polarity of the electric current of each small coil and intensity can carry out Long-distance Control, to regulate the Distribution of Magnetic Field of field region, thus change the distribution of plasma density in arc chamber.
Magnetic material (as soft iron etc.) cover can be inserted in space between each adjacent small coil, and magnetic material cover can increase the magnetic field intensity in space residing for arc chamber in field region.
The part magnetic material of the minor face of the magnet framework of window frame shape source magnet can be replaced by nonmagnetic substance.
The ionogenic arc chamber inside of broadband bundle can arrange multiple electrode along its length, and the shape of each electrode can be similar to the interior shape of arc chamber.
Each electrode can be connected respectively to independently voltage source, and the polarity of the supply voltage of each electrode and voltage strength can be different.
The polarity of voltage of each electrode and intensity can carry out Long-distance Control, thus change the distribution of plasma density in arc chamber.
This broadband beam ion origin system also can comprise an extraction electrode system further, and a downstream magnetic shielding device has limited the magnetic field range in magnetic field, source, and it can also comprise an ion beam current density distribution measurement system.
This broadband beam ion origin system also can comprise an ion beam current density distribution measurement system further, this ion beam current density distribution measurement system is generally arranged on ionogenic downstream, or as comprising in ionogenic ion implantor device.
According to ion beam current density distribution measuring data, the polarity of the electric current of the small coil of each source magnet coil and intensity can carry out Long-distance Control adjustment, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.
According to ion beam current density distribution measuring data, the polarity of the multielectrode voltage in each arc chamber and intensity can carry out Long-distance Control adjustment, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.
Fig. 4 shows the main coil of window frame shape source magnet and the effect of lateral coil that illustrate.Due to window frame shape magnet symmetry in the x direction, the starting point of transverse axis be window frame type source magnet at the center in x direction, the definition of Xmax be window frame shape magnet inside the maximum magnitude of field region.Vertical axis is the component intensity Bx in magnetic field in the x direction, and in order to the convenience explained, the distribution of Bx has been normalized to the value of the magnetic field intensity at center.In the drawings, the Distribution of Magnetic Field of drafting is the distribution of the magnetic field Bx at the near center location place of arc chamber 14.
The line of Diamond spot is the Distribution of Magnetic Field only having main coil, can see, this field distribution is very uniform, and the Distribution of Magnetic Field produced than the secondary magnet of the larger magnetic gap of tradition use is many uniformly.But due to the complexity of the plasma density distribution in arc chamber, so when running broadband ion source, people expect the distribution that can regulate magnetic field, source, the introducing of lateral coil is exactly to reach this object.
In the example shown in this Fig. 4, by a Power supply after four lateral coils are connected in series.The line of square dot is that clearly, the distribution in magnetic field has been changed when the exciting current of lateral coil and the Distribution of Magnetic Field of the exciting current of main coil when direction is identical, Distribution of Magnetic Field from being uniformly distributed the distribution being adjusted to and being bent upwards.The line of triangle form point is when the exciting current of lateral coil and the Distribution of Magnetic Field of the exciting current of main coil when direction is contrary, clearly, Distribution of Magnetic Field be adjusted to reclinate distribution from being uniformly distributed.
As can be seen here, lateral coil can change the Distribution of Magnetic Field that source magnet produces effectively.The regulated quantity of the change of Distribution of Magnetic Field, can regulate according to the size and Orientation of main coil and the design of lateral coil and the exciting current of main coil and lateral coil, Distribution of Magnetic Field be bent upwards or reclinate amount can reach from 0% to 30% free adjustment.
Fig. 5 shows one of characteristic that beam ion source, broadband of the present invention has, the window frame shape source magnet of open-type; In shown in Fig. 5 an one concrete design, the magnetic material (such as, soft iron) of the minor face 109 of yoke can be removed partially by vacuum distillation.Adopt such design, the magnetic field Bx that main coil 401 and 402 produces can more uniformly be distributed in scope wider in the x-direction.The space of the magnetic material of removing, can fill nonmagnetic material, such as aluminium etc. are not shown in the drawings), like this, the stable mechanical structure of window frame shape source magnet just can be maintained.
Fig. 6 shows one of characteristic that beam ion source, broadband of the present invention has, and window frame shape magnet has multiple small coil.This ionogenic structure is identical with the ion source of Fig. 2, comprises microscler arc chamber 14, cathodes heated indirectly by an el 101 and 102, microscler extraction opening 16, the plasma 41 produced in arc chamber, the ion beam 42 of extraction.Arc chamber 14 is arranged within the field region of ion source magnet.
The key producing beam ion source, uniform broadband is that the plasma density in microscler arc chamber needs evenly along its length.One of technology improving the uniformity is, produces the uniform Distribution of Magnetic Field of length direction at microscler arc chamber 41, and source magnet adopts window frame shape magnet.The yoke 16 of this window frame shape magnet, adopts soft iron manufacture usually.The long limit 107 of yoke, the minor face 109 of yoke.Long limit 107 is far longer than minor face 109 usually.
Source magnet has two coil groups, often organize coil respectively around the long limit 107 of magnet framework.Each coil groups can be made up of multiple little absolute coil, and the quantity of small coil has design to determine, from 1 to 100 not etc.Upper coil as shown in Fig. 3 A-A has small coil 111,112,113,114,115,116,117,118,119,120,121,122,123,124 compositions, shown lower coil has small coil 131, and 132,133,134,135,136,137,138,139,140,141,142,143,144 compositions.
Each independently small coil can be together in series and be connected to a current and power supply and power.Each independently small coil also can be connected to an independently current and power supply, such as, 111 coils shown in Fig. 3 A-A are connected to power supply 151, and 131 coils are connected to power supply 152.Uniform magnetic field Bx can be produced in the central space of window frame shape magnet.
The key producing beam ion source, uniform broadband is that the plasma density in microscler arc chamber needs evenly along its length.One of technology improving the uniformity is, the polarity of the current and power supply of each independent small coil and intensity can be different, by regulating the electric current of small coil, just can regulate the intensity of local magnetic field, like this, just can change the Distribution of Magnetic Field in region.By the adjustment of Distribution of Magnetic Field, thus regulate the distribution of plasma density in arc chamber.
Arc chamber 14 is arranged within the field region of window frame shape magnet, and the center of arc chamber 14 can be arranged on center or the immediate vicinity of window frame shape magnet.
Fig. 7 shows one of characteristic that beam ion source, broadband of the present invention has, another kind of window frame shape magnet.In order to increase the magnetic field intensity at arc chamber 41 place, magnetic material (as soft iron etc.) cover can be inserted in the space between each adjacent small coil.Magnetic material cover 171 between the small coil 124 and 123 on the top as shown in Fig. 7 A-A, the magnetic material cover 172 etc. between the small coil 144 and 143 of bottom.The magnetic material cover 171 on top can contact with the long limit 107 on the top of window frame shape yoke, also can not contact.The magnetic material cover 172 of bottom can contact with the long limit 108 of the bottom of window frame shape yoke, also can not contact.These magnetic material covers can increase the magnetic field intensity of window frame shape magnet.
Fig. 8 shows one of characteristic that beam ion source, broadband of the present invention has, and multiple electrode is placed in arc chamber inside.The ion source of this ionogenic structure and Fig. 2 is similar, comprises microscler arc chamber 14, cathodes heated indirectly by an el 101 and 102, microscler extraction opening 16, the plasma 41 produced in arc chamber, the ion beam 42 of extraction.Arc chamber 14 is arranged within the field region of ion source magnet.
The key producing beam ion source, uniform broadband is that the plasma density in microscler arc chamber needs evenly along its length.One of technology improving the uniformity arranges a series of electrode along its length in the inside of arc chamber, the number of electrode by designing decision, from 1 to 100 not etc.As shown in Fig. 6 A-A, in arc chamber, be provided with 13 electrodes: 201,202,203,204,205,206,207,208,209,210,211,212 and 213.As shown in Fig. 6 C-C, the shape of each electrode can be similar to the interior shape of arc chamber.
Each electrode by separately independently insulator pin 241 and outside separately independently voltage source be connected, as shown in Fig. 6 A-A, 13 electrodes: 201,202,203,204,205,206,207,208,209,210,211,212 and 213, respectively with power supply V1, V2, V3, V4, V5, V6, V7, V8, V9, V10, V11, V12, V13 are connected.
The voltage of arc chamber internal electrode can affect the plasma density of the inner local of arc chamber, the polarity of the voltage source of each absolute electrode and intensity can be different, by regulating the voltage of electrode, thus regulate the distribution of plasma density in arc chamber to obtain uniform plasma density distribution.
Fig. 9 shows an ion beam system comprising beam ion source, broadband of the present invention.Ion source body is made up of three parts 301,311 and 312, and 301 is vacuum seal flanges, and 312 is arc chambers, and arc chamber adopts structure of the present invention, and 311 is supporting constructions of arc chamber.302,303 and 304 form high voltage insulator, and 302 and 304 is vacuum seal flanges, and 303 is insulating material.304 is vacuum chambers.315 is ion source magnets, and source magnet adopts window frame shape magnet of the present invention.316 is the magnetic shielding devices being positioned at source magnet downstream, and the material of magnetic shielding device normally magnetic material (as soft iron etc.) manufactures, and magnetic shielding device is used for the magnetic field range in magnetic field, restriction source.313 and 314 is extraction electrode devices, and 313 is extraction electrodes, and 314 is position adjusting mechanisms of extraction electrode, and 321 is the ion beams of drawing.306,317 and 308 is another vacuum chambers of ion beam system, 306 and 308 is adpting flanges, 308 is vacuum chambers, vacuum chamber 308 completes other function of ion beam system, as (not shown)s such as ion beam analysis, deflection, acceleration or decelerations, 321 are through the ion beam as analysis, deflection, acceleration or deceleration etc., and 320 is vacuum pump interface.309 is target chambers of ion beam system, and this target chamber comprises target sheet etc., and target chamber is also particularly including an ion beam current density distribution measurement system 323, and ion beam current density distribution measurement system 323 measures the density distribution of broadband ion beam in x direction.
According to ion beam current density distribution measuring data, each source magnet lateral coil in Fig. 3 and Fig. 5 is as 401, polarity and the intensity of the electric current of 402,403 and 404 etc. can carry out Long-distance Control adjustment, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.The small coil of each source magnet coil in Fig. 7, as the polarity of the electric current of 111 and 131 etc. and intensity can carry out Long-distance Control adjustment, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.According to ion beam current density distribution measuring data, the electrode in each arc chamber in Fig. 8, as 201 and 202 etc., the polarity of voltage and intensity can carry out Long-distance Control adjustment, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. for a beam ion source, indirect-heating broadband for ion beam system, it is characterized in that: comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame shape source magnet, the magnetic shielding device of Distribution of Magnetic Field scope in restriction window frame shape source magnet downstream, the internal electrode being placed on described arc chamber interior and the power supply of powering to described arc chamber, two indirectly heated cathode, window frame shape source magnet and the internal electrode that is placed on described arc chamber interior.
2. according to claim 1 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: described arc chamber has one the 100 millimeters microscler cavitys to 1000 mm sizes at length direction, the one side of described arc chamber has one to have 100 millimeters of microscler extraction openings to 1000 mm sizes so that ion is drawn from described microscler extraction opening at length direction.
3. according to claim 1 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: described pair of indirectly heated cathode is made up of two indirectly heated cathodes, and each indirectly heated cathode is arranged on one end of described arc chamber; Described indirectly heated cathode comprises the negative electrode of tubular, filament and bracing or strutting arrangement, this bracing or strutting arrangement supports negative electrode and the filament of described tubular, one end of the negative electrode of described tubular is unlimited, and the other end of the negative electrode of described tubular comprises a conductivity cover and extends in arc chamber for launching the electronics of ionize.
4. according to claim 1 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: described multi-channel gas inlet device is arranged on the inside of described arc chamber, and in the face of gas supply pipe line, the multi-channel gas entrance of described multi-channel gas inlet device has the length direction along arc chamber to arrange multiple equally distributed hole, is reallocated and enters arc chamber after the multi-channel gas entrance of the dopant gas molecules entered from described gas supply pipe line by described multi-channel gas inlet device.
5. according to claim 1 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: the internal electrode being placed on described arc chamber interior is the multiple electrodes arranged along its length at described arc chamber interior, the shape of each electrode is similar to the interior shape of arc chamber, each electrode is connected respectively to independently voltage source, and the polarity of the voltage source of each electrode and voltage strength adjust separately to adjust the plasma density in arc chamber.
6. according to claim 1 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: described restriction window frame shape source magnet downstream the material of magnetic shielding device of Distribution of Magnetic Field scope be the plate made of magnetic material or hollow box, described restriction window frame shape source magnet downstream the magnetic shielding device of Distribution of Magnetic Field scope be arranged on the downstream of described window frame shape source magnet, the downstream being used for limiting described window frame shape source magnet Distribution of Magnetic Field scope.
7. according to claim 1 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: described window frame shape source magnet comprises a window frame shape yoke, a pair main coil and one group of lateral coil, this window frame shape yoke has long a pair limit and pair of short edges, and long limit is greater than minor face; Multiple power supply powers to described main coil and described lateral coil.
8. according to claim 7 for the beam ion source, indirect-heating broadband of ion beam system, it is characterized in that: described main coil comprises multiple independent small coil further, each independent small coil is connected to an independently current and power supply, and polarity and the intensity of the current and power supply of each independent small coil adjust; Magnetic material cover is inserted in space between each adjacent small coil.
9. a broadband ion beam system, it is characterized in that: comprise the beam ion source, indirect-heating broadband for ion beam system according to claim 1, extraction electrode unit, ion beam transport device, ion beam measuring unit and target target chamber, broadband ion beam is to the surface of target for transmitting, focusing on, described in acceleration or deceleration for described ion beam transport device, and the beam ion source, indirect-heating broadband for ion beam system is drawn by extraction electrode unit, carried out carrying and arrive target target chamber with ion beam transport device; Described ion beam measuring unit measures the angle of the ion beam current of ion beam, ion beam current density distribution and ion beam.
10. broadband ion beam system according to claim 9, is characterized in that: described ion beam transport device comprises mass analysis cell, deflection unit and accelerator module; Described in described ion beam transport device transmission, focusing, acceleration or deceleration, broadband ion beam is to target surface; Described ion beam measuring unit measures the ion beam current of ion beam, the angle of ion beam current density distribution and ion beam; Measurement data according to ion beam current density distribution is used to the main coil of FEEDBACK CONTROL window frame shape source magnet, the adjustment of lateral coil, or the adjustment of the multiple internal electrode of FEEDBACK CONTROL is to obtain uniform broadband ion beam.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310089797.2A CN103247505B (en) | 2013-03-20 | 2013-03-20 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
| PCT/CN2014/073631 WO2014146569A1 (en) | 2013-03-20 | 2014-03-18 | Broadband ion beam system, and indirectly heated broadband beam ion source used for ion beam system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310089797.2A CN103247505B (en) | 2013-03-20 | 2013-03-20 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103247505A CN103247505A (en) | 2013-08-14 |
| CN103247505B true CN103247505B (en) | 2016-01-27 |
Family
ID=48926940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310089797.2A Active CN103247505B (en) | 2013-03-20 | 2013-03-20 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103247505B (en) |
| WO (1) | WO2014146569A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247505B (en) * | 2013-03-20 | 2016-01-27 | 宁波瑞曼特新材料有限公司 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
| JP6415388B2 (en) * | 2015-05-29 | 2018-10-31 | 住友重機械イオンテクノロジー株式会社 | Plasma generator |
| US9978554B1 (en) | 2017-01-26 | 2018-05-22 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
| CN109686639B (en) * | 2018-12-25 | 2021-02-12 | 哈工大机器人（岳阳）军民融合研究院 | Magnetic shielding Hall ion source with flow guide baffle and ionization method thereof |
| US10748738B1 (en) * | 2019-03-18 | 2020-08-18 | Applied Materials, Inc. | Ion source with tubular cathode |
| CN111337863B (en) * | 2020-03-13 | 2021-05-28 | 北京大学 | Magnetic field measurement method in field inversion plasma |
| CN117894653A (en) * | 2022-12-19 | 2024-04-16 | 广东省新兴激光等离子体技术研究院 | Ion source for extracting ribbon ion beam |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1282384A (en) * | 1997-12-17 | 2001-01-31 | 尤纳克西斯贸易公司 | Magnetron sputtering source |
| CN1425186A (en) * | 2000-12-28 | 2003-06-18 | 石川岛播磨重工业株式会社 | Method and device for separating ion mass, and ion doping device |
| CN1632906A (en) * | 2003-12-22 | 2005-06-29 | 中国科学院半导体研究所 | Ion source device for low-energy ion beam material preparing method |
| CN101017761A (en) * | 2006-12-08 | 2007-08-15 | 珠海市恩博金属表面强化有限公司 | Metal gas mixing ion injector |
| CN101692369A (en) * | 2009-07-23 | 2010-04-07 | 胡新平 | Mass analyzing magnet for broadband ion beam and implanter system |
| CN101807507A (en) * | 2010-04-19 | 2010-08-18 | 胡新平 | Ion implanter system with beam decelerator |
| CN201975363U (en) * | 2010-12-09 | 2011-09-14 | 北大方正集团有限公司 | Cation source device |
| CN102445901A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Method for automatically stabilizing arc flow of ion source |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3899161B2 (en) * | 1997-06-30 | 2007-03-28 | 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー | Ion generator |
| US7700925B2 (en) * | 2007-12-28 | 2010-04-20 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a multimode ion source |
| US8072149B2 (en) * | 2008-03-31 | 2011-12-06 | Varian Semiconductor Equipment Associates, Inc. | Unbalanced ion source |
| CN103247505B (en) * | 2013-03-20 | 2016-01-27 | 宁波瑞曼特新材料有限公司 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
-
2013
- 2013-03-20 CN CN201310089797.2A patent/CN103247505B/en active Active
-
2014
- 2014-03-18 WO PCT/CN2014/073631 patent/WO2014146569A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1282384A (en) * | 1997-12-17 | 2001-01-31 | 尤纳克西斯贸易公司 | Magnetron sputtering source |
| CN1425186A (en) * | 2000-12-28 | 2003-06-18 | 石川岛播磨重工业株式会社 | Method and device for separating ion mass, and ion doping device |
| CN1632906A (en) * | 2003-12-22 | 2005-06-29 | 中国科学院半导体研究所 | Ion source device for low-energy ion beam material preparing method |
| CN101017761A (en) * | 2006-12-08 | 2007-08-15 | 珠海市恩博金属表面强化有限公司 | Metal gas mixing ion injector |
| CN101692369A (en) * | 2009-07-23 | 2010-04-07 | 胡新平 | Mass analyzing magnet for broadband ion beam and implanter system |
| CN101807507A (en) * | 2010-04-19 | 2010-08-18 | 胡新平 | Ion implanter system with beam decelerator |
| CN102445901A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Method for automatically stabilizing arc flow of ion source |
| CN201975363U (en) * | 2010-12-09 | 2011-09-14 | 北大方正集团有限公司 | Cation source device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014146569A1 (en) | 2014-09-25 |
| CN103247505A (en) | 2013-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103247505B (en) | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system | |
| JP5610543B2 (en) | Ion source | |
| TWI648761B (en) | An improved ion source assembly for producing a ribbon ion beam | |
| JP4085216B2 (en) | Ion source and magnetic filter used therefor | |
| TWI467615B (en) | Ion source and method of adjusting the uniformity of ion beam | |
| CN103250228B (en) | Be used in the plasma fluid rifle in ion implantation system and supplying method thereof | |
| KR100950736B1 (en) | Ion implanter | |
| CN209676564U (en) | A kind of radio frequency induction coupled linear ion source | |
| US8455837B2 (en) | Ion implanter, ion implantation method and program | |
| KR20070020023A (en) | Faraday dose and uniformity monitor for plasma based ion implantion | |
| CN105551922B (en) | A kind of SiC high temperature high-energy aluminum ion implantation apparatus | |
| TW201312620A (en) | Apparatus and method for measuring ion beam current | |
| JP2013008539A (en) | Plasma processing apparatus | |
| JP2013041767A (en) | Ion implantation device | |
| US20120187842A1 (en) | Microwave plasma electron flood | |
| JP2005535096A (en) | Ion source and coaxial inductive coupler for ion implantation | |
| TWI754093B (en) | Apparatus for semiconductor ion implantation and method for generating ions in ion implantation process | |
| US8663430B2 (en) | Magnetron sputtering apparatus and method for manufacturing thin film | |
| CN114258182A (en) | Cusp field ion source and ion beam generating method | |
| TWI647733B (en) | Ion source and ion implantation system | |
| JP2013134835A (en) | Plasma processing apparatus | |
| CN101922046B (en) | Plasma immersion injection device | |
| KR102391045B1 (en) | Plasma Apparatus With An electron Beam Emission Source | |
| KR20090033718A (en) | Plasma treatment apparatus having linear antenna enclosing magnet | |
| KR20100029539A (en) | Carbon doping method using the plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Interthermal broadband beam ion source and broadband ion beam system for ion beam system Effective date of registration: 20211115 Granted publication date: 20160127 Pledgee: Zhejiang Tailong Commercial Bank Co.,Ltd. Ningbo Yuyao sub branch Pledgor: NINGBO RUIMANTE NEW MATERIAL Co.,Ltd. Registration number: Y2021330002260 |