CN103247505A - Indirectly heated broadband beam ion source for ion beam system and broadband ion beam system - Google Patents
Indirectly heated broadband beam ion source for ion beam system and broadband ion beam system Download PDFInfo
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- CN103247505A CN103247505A CN2013100897972A CN201310089797A CN103247505A CN 103247505 A CN103247505 A CN 103247505A CN 2013100897972 A CN2013100897972 A CN 2013100897972A CN 201310089797 A CN201310089797 A CN 201310089797A CN 103247505 A CN103247505 A CN 103247505A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Abstract
The invention relates to semiconductor manufacturing equipment, and discloses an indirectly heated broadband beam ion source for an ion beam system. The broadband beam ion source comprises an arc chamber, double indirectly heated cathodes; a multi-channel gas inlet device, a window-frame shaped source magnet, a magnetic shielding device, internal electrodes and a power source, wherein the magnetic shielding device limits the distribution range of magnetic field of downstream of the source magnet; the internal electrodes are placed inside the arc chamber; and the power source is used for supplying power to the arc chamber, the double indirectly heated cathodes, the window-frame shaped source magnet and the internal electrodes placed inside the arc chamber. The indirectly heated broadband beam ion source for the ion beam system and the broadband ion beam system have the benefits that through adopting the double indirectly heated cathodes, the source magnet capable of adjusting local magnetic field and a plurality of adjustable electrodes, the purpose that density distribution of the plasma in the arc chamber is regulated is further achieved.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, relate in particular to a kind of beam ion source, indirect-heating broadband and broadband ion beam system for ion beam system.
Background technology
It is that a kind of this processing procedure is commonly called doping the processing procedure of atom or molecule introducing target workpiece substrate that ion injects, and it can change the attribute of material.Ion inject be one at the common processing procedure of the manufacturing of large scale integrated circuit, ion injects the manufacturing process that also can be used for solar battery sheet, and ion injects the manufacturing process relevant with making optical instrument or display instrument (as flat-panel monitor) etc. such as also can be used for thin film deposition.
A typical ion implantor comprises an ion source that produces ion beam; Ion beam selection, moulding and a transmission system, it comprises the ion beam quality analytical system of using magnetic field; And a target chamber, for the treatment of the semiconductor wafers that will inject ion beam.
Ion source is the important component part of ion implant systems, and ion source is generally used for producing stable different types of ion beam, and different drawing under the voltage, these ion beams can have different energy.
Fig. 1 has described a kind of ionogenic typical case of so-called indirectly heated cathode who has been widely used in the ion implant systems and has embodied.This ion source comprises an arc chamber 14 with conductive chamber wall, at an end of arc chamber 14 cathodes heated indirectly by an el 101 is arranged, and cathodes heated indirectly by an el 101 comprises the filament 11 of a negative electrode 12 and the portion that sets within it.Filament 11 is connected to first power supply 31, and power supply 31 produces high electric current, and this high electric current can heat tungsten filament 11 and arrive high temperature to produce thermionic emission.Second power supply 32 forms bias voltage between tungsten filament 11 and negative electrode 12, this bias voltage accelerates the thermal electron of tungsten filament 11 to negative electrode 12 motions, and heated cathode 12.Negative electrode 12 is heated the back and produces the thermal electron that enters to arc chamber 14.The 3rd power supply 33 forms bias voltage between negative electrode 12 and arc chamber 14, the thermal electron that this bias voltage accelerates negative electrode 12 enters arc chamber 14.The other end at arc chamber 14 arranges reflecting electrode 13, and the setting of the current potential of reflecting electrode 13 is identical with the status of negative electrode 12 or close, and the effect of reflecting electrode is with the electron reflection arcing back chamber in the arc chamber.A source magnet is set up magnetic field B and is come the indoor electronics of bound arc in the inside of arc chamber 14.A kind of typical source magnet is the dipolar magnet of a super large caliber, and this source magnet is usually included in the magnetic pole 22 and 24 at arc chamber two ends, and around magnetic pole 22 days and 24 coils 21 and 23.A source of the gas (not shown) can provide the gas of dopant species, for example, BF3, PH3 or AsH3 etc., gas enters arc chamber 14 through air inlet 15.Electronics produces plasma 41 by the interaction with gas molecule in arc chamber.Arc chamber 14 front ends 16 have one to draw slotted hole footpath 41, one cover extraction electrode (not shown)s and can draw ion beam 42 by drawing aperture 41 from plasma 41.Typical indirect-heating ion source produces the wide ion beam of 50-100mm usually.
Broadband ion beam has been used to the ion injection that modern high current ion implanter carries out 300 millimeters wafers, sees US Patent No. 5350926.There, broadband bundle be by a small size (with big wafer size relatively) the small size ion beam expansion that produces of ion source form.In order to reduce the complexity of this implanter system, people wish to produce thin wide broadband ion beam.Therefore, preferably provide a uniform broadband ion beam of density distribution by beam ion source, broadband, particularly meaning is outstanding in injection application of following 450mm wafer or battery sheet for this.In order to produce 300 millimeters or wideer ion beam from ion source, improved technology of ion source need be arranged.
Summary of the invention
In order to solve the problems of the prior art, the invention provides a kind of beam ion source, indirect-heating broadband for ion beam system, solve the problem that has the implanter system complexity in the prior art and the uniform broadband ion beam of density distribution can't be provided.
The invention provides a kind of beam ion source, indirect-heating broadband for ion beam system, comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, restriction source magnet downstream the Distribution of Magnetic Field scope magnetic shielding device, be placed on the internal electrode of described arc chamber inside and give described arc chamber, two indirectly heated cathode, window frame source magnet and be placed on the power supply of the internal electrode power supply of described arc chamber inside.
As a further improvement on the present invention, described arc chamber has one 100 millimeters to the microscler cavity of 1000 mm sizes at length direction, and the one side of described arc chamber has one to have 100 millimeters at length direction and draw opening so that ion is drawn from the described microscler opening of drawing to the microscler of 1000 mm sizes.
As a further improvement on the present invention, described pair of indirectly heated cathode is made up of two indirectly heated cathodes, and each indirectly heated cathode is arranged on an end of described arc chamber; Described indirectly heated cathode comprises negative electrode, filament and the bracing or strutting arrangement of tubular, this bracing or strutting arrangement supports negative electrode and the filament of described tubular, one end of the negative electrode of described tubular opens wide, and the other end of the negative electrode of described tubular comprises that a conductivity cover extends to the electronics that is used for emission ionize in the arc chamber.
As a further improvement on the present invention, described multi-channel gas inlet device is installed in the inside of described arc chamber, and in the face of the gas supply pipe line, the multi-channel gas entrance of described multi-channel gas inlet device has along the length direction of arc chamber a plurality of equally distributed holes is set, and is reallocated behind the multi-channel gas entrance of dopant gas molecules by described multi-channel gas inlet device that enters from described gas supply pipe line and enters arc chamber.
As a further improvement on the present invention, described arc chamber inside arranges a plurality of electrodes along its length, the shape of each electrode is similar to the interior shape of arc chamber, each electrode is connected respectively to independently voltage source, and the polarity of the supply voltage of each electrode and voltage strength are adjusted separately in order to adjust the interior plasma density of arc chamber.
As a further improvement on the present invention, described restriction source magnet downstream material plate or the hollow box made of magnetic material normally of magnetic shielding device of Distribution of Magnetic Field scope, described restriction source magnet downstream the magnetic shielding device of Distribution of Magnetic Field scope be arranged on the downstream of described window frame shape source magnet, be used for limiting magnetic field, source the downstream the Distribution of Magnetic Field scope.
As a further improvement on the present invention, described window frame shape source magnet comprises a window frame shape yoke, a pair of main coil and one group of lateral coil, and this window frame shape yoke has a pair of long limit and pair of short edges, and long limit is greater than minor face; A plurality of power supplys are given described main coil and the power supply of described lateral coil.
As a further improvement on the present invention, described main coil is wound on the long limit of described window frame shape yoke, and main coil is connected in series and by a current source supply, main coil is arranged on the long limit of described window frame shape yoke between two parties; Described lateral coil is wrapped in the long limit of described window frame shape yoke and is separately positioned on two ends of described main coil, and lateral coil is connected in series, and by a current source supply, or each lateral coil can be respectively by independent current source supply.
As a further improvement on the present invention, described main coil further comprises a plurality of independent small coils, and each independent small coil is connected to an independently current and power supply, and polarity and the intensity of the current and power supply of each independent small coil are adjusted; The magnetic material cover is inserted in space between each adjacent small coil.
The present invention provides a kind of broadband ion beam system simultaneously, comprise the beam ion source, indirect-heating broadband for ion beam system, the extraction electrode unit, the ion beam transport device, ion beam measuring unit and target target chamber, described ion beam transport device is for transmitting, focus on, accelerate or slow down the surface of described broadband ion beam to target, and the beam ion source, indirect-heating broadband that is used for ion beam system is drawn, carried and arrive the target target chamber with the ion beam transport device by the extraction electrode unit; Described ion beam measuring unit is measured the angle of ion beam current, ion beam current density distribution and the ion beam of ion beam.
As a further improvement on the present invention, described beam ion source, indirect-heating broadband for ion beam system comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, restriction source magnet downstream the Distribution of Magnetic Field scope magnetic shielding device, be placed on the internal electrode of described arc chamber inside and give described arc chamber, two indirectly heated cathode, window frame source magnet and be placed on the power supply of the internal electrode power supply of described arc chamber inside.
As a further improvement on the present invention, described ion beam transport device comprises mass analysis cell, deflection unit and accelerator module; The transmission of described ion beam transport device focuses on, accelerate or the described broadband ion beam that slows down to target surface; Described ion beam measuring unit is measured the ion beam current of ion beam, the angle of ion beam current density distribution and ion beam, the measurement data of electron beam current density distribution is used to the main coil of FEEDBACK CONTROL window frame shape magnet, the adjusting of lateral coil, or the adjusting of a plurality of internal electrodes of FEEDBACK CONTROL is to obtain uniform broadband ion beam
The invention has the beneficial effects as follows: by adopting two cathodes heated indirectly by an els, have the source magnet that to regulate local magnetic field, have adjustable a plurality of electrode, thereby further reach the purpose of the plasma density distribution in the transfer arc chamber.
[description of drawings]
Fig. 1 has shown a cathodes heated indirectly by an el ion source that is widely used in ion implantor;
Fig. 2 has shown one of characteristic that beam ion source, broadband of the present invention has, two cathodes heated indirectly by an els and distributed inlet duct;
Fig. 3 has shown one of characteristic that beam ion source, broadband of the present invention has, window frame shape source magnet and its two main coils and four lateral coils;
Fig. 4 has shown the effect of main coil and the sideline circle of the window frame shape source magnet that illustrates;
Fig. 5 has shown one of characteristic that beam ion source, broadband of the present invention has, the window frame shape source magnet of open-type;
Fig. 6 has shown one of characteristic that beam ion source, broadband of the present invention has, and window frame shape magnet has a plurality of small coils;
Fig. 7 has shown one of characteristic that beam ion source, broadband of the present invention has, another kind of window frame shape magnet;
Fig. 8 has shown one of characteristic that beam ion source, broadband of the present invention has, a plurality of electrodes of the inner placement of arc chamber;
Fig. 9 has shown an ion beam system that comprises beam ion source, broadband of the present invention.
[embodiment]
The present invention is further described below in conjunction with description of drawings and embodiment.
Fig. 2 has shown a beam ion source, broadband with two cathodes heated indirectly by an els of the present invention; This ion source comprises an arc chamber 14 with conductive chamber wall, and arc chamber 14 obviously increases at its length direction, and its length is 100-1000mm.End at arc chamber 14 has a cathodes heated indirectly by an el 101, and cathodes heated indirectly by an el 101 comprises the filament 11 of a negative electrode 12 and the portion that sets within it.Filament 11 is connected to first power supply 31, and power supply 31 produces high electric current, and this high electric current can heat tungsten filament 11 and arrive high temperature to produce thermionic emission.Second power supply 32 forms bias voltage between tungsten filament 11 and negative electrode 12, this bias voltage accelerates the thermal electron of tungsten filament 11 to negative electrode 12 motions, and heated cathode 12.Negative electrode 12 is heated the back and produces the thermal electron that enters to arc chamber 14.The 3rd power supply 33 forms bias voltage between negative electrode 12 and arc chamber 14, the thermal electron that this bias voltage accelerates negative electrode 12 enters arc chamber 14.
The key that produces beam ion source, uniform broadband is that the plasma density in the microscler arc chamber needs evenly along its length.One of technology of improving the uniformity is that the other end at arc chamber arranges cathodes heated indirectly by an el.
The other end at arc chamber 14 has a cathodes heated indirectly by an el 102, and cathodes heated indirectly by an el 102 cathodes heated indirectly by an els 102 are basic identical with cathodes heated indirectly by an el 101.Cathodes heated indirectly by an el 102 comprises a negative electrode 12a and the filament 11a of the portion that sets within it.Filament 11a is connected to first power supply 31a, and power supply 31a produces high electric current, this high electric current can heat tungsten filament 11a to high temperature to produce thermionic emission.Second power supply 32a forms bias voltage between tungsten filament 11a and negative electrode 12a, this bias voltage accelerates the thermal electron of tungsten filament 11a to negative electrode 12a motion, and heated cathode 12a.Negative electrode 12 is heated the back and produces the thermal electron that enters to arc chamber 14.Second power supply 32a can be independently, or is exactly power supply 32.The 3rd power supply 33 forms bias voltage between negative electrode 12a and arc chamber 14, the thermal electron that this bias voltage accelerates negative electrode 12a enters arc chamber 14.
A source of the gas (not shown) can provide the gas of dopant species, for example, BF3, PH3 or AsH3 etc., gas enters arc chamber 14 through air inlet 15.
The key that produces beam ion source, uniform broadband is to produce the plasma of uniform density along its length in microscler arc chamber 14.A kind of raising is the multi-channel gas entrance 17 that will design at an inhomogeneity embodiment of the plasma of the inside of arc chamber.Multi-channel gas entrance 17 is installed in the inside of arc chamber, and the outlet of the gas supply pipe line of facing 15.Multi-channel gas entrance 17 has a plurality of equally distributed serial apertures 18, and serial aperture 18 is equally distributed along the direction of elongate of arc chamber.The dopant gas molecules that enters from described gas line 15 is reallocated by entering arc chamber 14 behind the serial aperture 18 after by multi-channel gas entrance 17.By this way, dopant gas molecules will be distributed evenly in the arc chamber 14.Consequently, collide mutually from electronics and the equally distributed dopant gas molecules of cathode emission, produce uniform plasma 41.
A source magnet is set up magnetic field B and is come the indoor electronics of bound arc in the inside of arc chamber 14.Because arc chamber is very long at its length direction, in order to obtain at the uniform plasma of length direction, magnetic field B preferably evenly distributes in the distribution of length direction.
Fig. 3 has shown one of characteristic that beam ion source, broadband of the present invention has, window frame shape source magnet and its two main coils and four sideline circles.Source magnet 106 is window frame type magnets, ion source with shown in Figure 2 ionogenic be identical, comprise microscler arc chamber 14, cathodes heated indirectly by an el 101 and 102, the plasma 41 that produces in the microscler opening 16 of drawing, arc chamber, the ion beam 42 of drawing.Arc chamber 14 be arranged on that ion source magnet 106 produces field region within.The center of microscler arc chamber 14 is arranged near the center of source magnet 106.
The long side direction of producing the ionogenic key of uniform wide beam and being at the arc chamber 14 on edge produces equally distributed plasma.An inhomogeneity mode of the plasma of the inside of raising arc chamber is source magnet of design, and this source magnet can produce the uniform magnetic field Bx along the long side direction of arc chamber 14, and in the present invention, source magnet 106 adopts window frame type magnet.
The yoke of this window frame shape magnet adopts the soft iron manufacturing usually.The long limit 107 of yoke, the minor face 109 of yoke, long limit 107 is far longer than minor face 109 usually.
Source magnet has two groups of coils, main coil and lateral coils.Their coils respectively around the long limit of magnet framework. Main coil 401 and 402 around long limit 107. Main coil 401 and 402 is connected in series, and is powered by current source I11. Main coil 401 and 402 produces magnetic field B x, and main coil normally is arranged on long limit 107 between two parties, and the design of the size of main coil is in order to provide better equally distributed magnetic field B x at long side direction.
Lateral coil has four coils 403,404,405 and 406.The long limits 107 that lateral coil 403 and 404 twines also are separately positioned on two ends of main coil 401, the long limits 107 that lateral coil 405 and 406 twines also are separately positioned on two ends of main coil 402, lateral coil 403,404,405 and 406 can be connected in series, by current source I12 power supply, lateral coil 403,404,405 and 406 also can be powered by independent current source (not demonstrating among the figure) respectively.As one of feature of the present invention, the introducing of lateral coil is in order to adjust and change the distribution of the magnetic field B x of main coil generation.The adjustment of the distribution of magnetic field B x can be conducive to produce along the more equally distributed plasma 41 of the long side direction of arc chamber 14.
In one embodiment:
The ion source of broadband bundle may comprise one or two indirectly heated cathode, and each negative electrode is arranged on an end of arc chamber.
The air inlet of arc chamber is many air inlets, and many air inlets almost evenly distribute at the length direction of arc chamber, thereby makes the gas pressure intensity in the arc chamber even.
The ion source of broadband bundle may comprise a source magnet, and this source magnet can be window frame shape magnet.It has two coil groups, every group of coil respectively around the long limit of magnet framework.
Arc chamber is in the field region of source magnet.
Each coil groups can be made up of a main coil and four lateral coils, and each lateral coil can be connected to an independently current and power supply, and the polarity of the current and power supply of each separate sides coil can be different with intensity.
The polarity of the electric current of each lateral coil and intensity can be carried out Long-distance Control, with the Distribution of Magnetic Field of adjusting field region, thus the distribution of plasma density in the change arc chamber.
Each coil groups can be made up of a plurality of little separate component coils, each independently small coil can be connected to an independently current and power supply, the polarity of the current and power supply of each independent small coil can be different with intensity.
The polarity of the electric current of each small coil and intensity can be carried out Long-distance Control, with the Distribution of Magnetic Field of adjusting field region, thus the distribution of plasma density in the change arc chamber.
Magnetic material (as soft iron etc.) cover can be inserted in space between each adjacent small coil, and the magnetic material cover can increase the magnetic field intensity in arc chamber space of living in the field region.
The part magnetic material of the minor face of the magnet framework of window frame shape source magnet can be replaced by nonmagnetic substance.
The ionogenic arc chamber inside of broadband bundle can arrange a plurality of electrodes along its length, and the shape of each electrode can be similar to the interior shape of arc chamber.
Each electrode can be connected respectively to independently voltage source, and the polarity of the supply voltage of each electrode can be different with voltage strength.
The polarity of voltage of each electrode and intensity can be carried out Long-distance Control, thereby change the distribution of plasma density in the arc chamber.
This broadband beam ion origin system also can further comprise an extraction electrode system, and a downstream magnetic shielding device has limited the magnetic field range in magnetic field, source, and it can also comprise an ion beam current density distribution measurement system.
This broadband beam ion origin system also can further comprise an ion beam current density distribution measurement system, this ion beam current density distribution measurement system operated by rotary motion is in ionogenic downstream, perhaps as a device in comprising ionogenic ion implantor.
According to ion beam current density distribution measuring data, the polarity of the electric current of the small coil of each source magnet coil and intensity can be carried out Long-distance Control and regulated, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.
According to ion beam current density distribution measuring data, the polarity of the multielectrode voltage in each arc chamber and intensity can be carried out Long-distance Control and regulated, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.
Fig. 4 has shown the main coil of the window frame shape source magnet that illustrates and the effect of lateral coil.Because the symmetry of window frame shape magnet on the x direction, the starting point of transverse axis be window frame type source magnet at the center of x direction, the definition of Xmax be window frame shape magnet inside the maximum magnitude of field region.Vertical axis is the component intensity Bx in the magnetic field on the x direction, and for the convenience of explaining, the distribution of Bx has been normalized to the value in the magnetic field intensity at center.In the drawings, the Distribution of Magnetic Field of drafting is the distribution of magnetic field B x of the vicinity, center of arc chamber 14.
The line of Diamond spot is the Distribution of Magnetic Field of having only main coil, can see, this field distribution is very uniform, and the Distribution of Magnetic Field that the secondary magnet than big magnetic gap that uses than tradition produces is many uniformly.Yet because the complexity of the plasma density distribution in the arc chamber, so when operation broadband ion source, people's expectation can be regulated the source DISTRIBUTION OF MAGNETIC FIELD, the introducing of lateral coil is exactly in order to reach this purpose.
In this example shown in Figure 4, four lateral coils are connected in series the back by a power supply power supply.The line of square dot is that clearly, DISTRIBUTION OF MAGNETIC FIELD has been changed when the Distribution of Magnetic Field of exciting current when direction is identical of exciting current with the main coil of lateral coil, Distribution of Magnetic Field be adjusted to the distribution that is bent upwards from even distribution.The line of triangle form point is the Distribution of Magnetic Field of exciting current when direction is opposite when exciting current with the main coil of lateral coil, clearly, Distribution of Magnetic Field be adjusted to reclinate distribution from even distribution.
This shows that lateral coil can change the Distribution of Magnetic Field that source magnet produces effectively.The regulated quantity of the variation of Distribution of Magnetic Field can be regulated according to the size and Orientation of the exciting current of the design of main coil and lateral coil and main coil and lateral coil, Distribution of Magnetic Field be bent upwards or reclinate amount can reach from 0% to 30% free adjustment.
Fig. 5 has shown one of characteristic that beam ion source, broadband of the present invention has, the window frame shape source magnet of open-type; In the concrete design shown in Figure 5, the magnetic material of the minor face 109 of yoke (for example, soft iron) can partly be removed.Adopt such design, main coil 401 and the 402 magnetic field B x that produce can more be evenly distributed in along in the wideer scope of x direction.Nonmagnetic material can be filled in the space of the magnetic material of removing, and for example aluminium etc. is not shown in the drawings), like this, just can keep the stable mechanical structure of window frame shape source magnet.
Fig. 6 has shown one of characteristic that beam ion source, broadband of the present invention has, and window frame shape magnet has a plurality of small coils.This ionogenic structure is identical with the ion source of Fig. 2, comprises microscler arc chamber 14, cathodes heated indirectly by an el 101 and 102, the plasma 41 that produces in the microscler opening 16 of drawing, arc chamber, the ion beam 42 of drawing.Arc chamber 14 is arranged within the field region of ion source magnet.
The key that produces beam ion source, uniform broadband is that the plasma density in the microscler arc chamber needs evenly along its length.One of technology of improving the uniformity is to be created in the uniform Distribution of Magnetic Field of length direction of microscler arc chamber 41, source magnet employing window frame shape magnet.The yoke 16 of this window frame shape magnet adopts the soft iron manufacturing usually.The long limit 107 of yoke, the minor face 109 of yoke.Long limit 107 is far longer than minor face 109 usually.
Source magnet has two coil groups, every group of coil respectively around the long limit 107 of magnet framework.Each coil groups can be made up of a plurality of little absolute coils, and the quantity of small coil has design to determine, does not wait from 1 to 100.Last coil shown in Fig. 3 A-A has small coil 111,112,113,114,115,116,117,118,119,120,121,122,123,124 form, and shown lower coil has small coil 131,132,133,134,135,136,137,138,139,140,141,142,143,144 form.
Each independently small coil can be together in series and be connected to the power supply of current and power supply.Each independently small coil also can be connected to an independently current and power supply, for example 111 coils shown in Fig. 3 A-A are connected to power supply 151,131 coils and are connected to power supply 152.Central space at window frame shape magnet can produce uniform magnetic field B x.
The key that produces beam ion source, uniform broadband is that the plasma density in the microscler arc chamber needs evenly along its length.One of technology of improving the uniformity is, the polarity of the current and power supply of each independent small coil can be different with intensity, and by regulating the electric current of small coil, the intensity that just can regulate local magnetic field like this, just can change regional Distribution of Magnetic Field.By the adjusting of Distribution of Magnetic Field, thereby regulate the distribution of plasma density in the arc chamber.
Fig. 7 has shown one of characteristic that beam ion source, broadband of the present invention has, another kind of window frame shape magnet.In order to increase the magnetic field intensity at arc chamber 41 places, magnetic material (as soft iron etc.) cover can be inserted in the space between each adjacent small coil.Magnetic material cover 171 between the small coil 124 and 123 on the top shown in Fig. 7 A-A, the magnetic material cover 172 between the small coil 144 and 143 of bottom etc.The magnetic material on top cover 171 can contact with the long limit 107 on the top of window frame shape yoke, also can not contact.The magnetic material of bottom cover 172 can contact with the long limit 108 of the bottom of window frame shape yoke, also can not contact.These magnetic material covers can increase the magnetic field intensity of window frame shape magnet.
Fig. 8 has shown one of characteristic that beam ion source, broadband of the present invention has, a plurality of electrodes of the inner placement of arc chamber.The ion source of this ionogenic structure and Fig. 2 is similar, comprises microscler arc chamber 14, cathodes heated indirectly by an el 101 and 102, the plasma 41 that produces in the microscler opening 16 of drawing, arc chamber, the ion beam 42 of drawing.Arc chamber 14 is arranged within the field region of ion source magnet.
The key that produces beam ion source, uniform broadband is that the plasma density in the microscler arc chamber needs evenly along its length.One of technology of improving the uniformity is in the inside of arc chamber a series of electrode to be set along its length, and the number of electrode is determined by design, do not wait from 1 to 100.Shown in Fig. 6 A-A, in arc chamber, be provided with 13 electrodes: 201,202,203,204,205,206,207,208,209,210,211,212 and 213.Shown in Fig. 6 C-C, the shape of each electrode can be similar to the interior shape of arc chamber.
Each electrode by separately independently insulator pin 241 and outside separately independently voltage source be connected, shown in Fig. 6 A-A, 13 electrodes: 201,202,203,204,205,206,207,208,209,210,211,212 and 213, respectively with power supply V1, V2, V3, V4, V5, V6, V7, V8, V9, V10, V11, V12, V13 is connected.
The voltage of arc chamber internal electrode can influence the inner local plasma density of arc chamber, the polarity of the voltage source of each absolute electrode can be different with intensity, by the voltage of adjusting electrode, thereby the distribution of plasma density is to obtain uniform plasma density distribution in the adjusting arc chamber.
Fig. 9 has shown an ion beam system that comprises beam ion source, broadband of the present invention.The ion source body is made up of three parts 301,311 and 312, and the 301st, the vacuum seal flange, the 312nd, arc chamber, arc chamber adopts structure of the present invention, the 311st, the supporting construction of arc chamber.302,303 and 304 constitute high voltage insulator, and 302 and 304 is vacuum seal flanges, and the 303rd, insulating material.The 304th, vacuum chamber.The 315th, ion source magnet, source magnet adopt window frame shape magnet of the present invention.The 316th, be positioned at the magnetic shielding device in source magnet downstream, the material of magnetic shielding device normally magnetic material (as soft iron etc.) is made, and magnetic shielding device is used for limiting the magnetic field range in magnetic field, source.313 and 314 is extraction electrode devices, the 313rd, and extraction electrode, the 314th, the position adjusting mechanism of extraction electrode, the 321st, the ion beam of drawing.306,317 and 308 is another vacuum chambers of ion beam system, 306 and 308 is adpting flanges, the 308th, vacuum chamber, vacuum chamber 308 is finished other function of ion beam system, as (not shown)s such as ion beam analysis, deflection, acceleration or decelerations, the 321st, through the ion beam as analysis, deflection, acceleration or deceleration etc., the 320th, vacuum pump interface.The 309th, the target chamber of ion beam system, this target chamber comprises target sheet etc., and target chamber is also particularly including an ion beam current density distribution measurement system 323, and ion beam current density distribution measurement system 323 is measured broadband ion beam in the density distribution of x direction.
According to ion beam current density distribution measuring data, each source magnet lateral coil among Fig. 3 and Fig. 5 is as 401, the polarity of 402,403 and 404 etc. electric current and intensity can be carried out Long-distance Control and regulated, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.The small coil of each the source magnet coil among Fig. 7, the polarity of the electric current as 111 and 131 etc. and intensity can carry out Long-distance Control to be regulated, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.According to ion beam current density distribution measuring data, the electrode in each arc chamber among Fig. 8, as 201 and 202 etc., the polarity of voltage and intensity can carry out Long-distance Control and regulate, with the uniformity of the density distribution of feedback regulation broadband ion beam electronic current.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention does, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (12)
1. beam ion source, indirect-heating broadband that is used for ion beam system is characterized in that: comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, restriction source magnet downstream the Distribution of Magnetic Field scope magnetic shielding device, be placed on the internal electrode of described arc chamber inside and give described arc chamber, two indirectly heated cathode, window frame source magnet and be placed on the power supply of the internal electrode power supply of described arc chamber inside.
2. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 1, it is characterized in that: described arc chamber has one 100 millimeters to the microscler cavity of 1000 mm sizes at length direction, and the one side of described arc chamber has one to have 100 millimeters at length direction and draw opening so that ion is drawn from the described microscler opening of drawing to the microscler of 1000 mm sizes.
3. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 1, it is characterized in that: described pair of indirectly heated cathode is made up of two indirectly heated cathodes, and each indirectly heated cathode is arranged on an end of described arc chamber; Described indirectly heated cathode comprises negative electrode, filament and the bracing or strutting arrangement of tubular, this bracing or strutting arrangement supports negative electrode and the filament of described tubular, one end of the negative electrode of described tubular opens wide, and the other end of the negative electrode of described tubular comprises that a conductivity cover extends to the electronics that is used for emission ionize in the arc chamber.
4. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 1, it is characterized in that: described multi-channel gas inlet device is installed in the inside of described arc chamber, and in the face of the gas supply pipe line, the multi-channel gas entrance of described multi-channel gas inlet device has along the length direction of arc chamber a plurality of equally distributed holes is set, and is reallocated behind the multi-channel gas entrance of dopant gas molecules by described multi-channel gas inlet device that enters from described gas supply pipe line and enters arc chamber.
5. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 1, it is characterized in that: described arc chamber inside arranges a plurality of electrodes along its length, the shape of each electrode is similar to the interior shape of arc chamber, each electrode is connected respectively to independently voltage source, and the polarity of the supply voltage of each electrode and voltage strength are adjusted separately in order to adjust the interior plasma density of arc chamber.
6. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 1, it is characterized in that: described restriction source magnet downstream the material of magnetic shielding device of Distribution of Magnetic Field scope be plate or the hollow box that magnetic material is made, described restriction source magnet downstream the magnetic shielding device of Distribution of Magnetic Field scope be arranged on the downstream of described window frame shape source magnet, be used for limiting magnetic field, source the downstream the Distribution of Magnetic Field scope.
7. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 1, it is characterized in that: described window frame shape source magnet comprises a window frame shape yoke, a pair of main coil and one group of lateral coil, this window frame shape yoke has a pair of long limit and pair of short edges, and long limit is greater than minor face; A plurality of power supplys are given described main coil and the power supply of described lateral coil.
8. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 7, it is characterized in that: described main coil is wound on the long limit of described window frame shape yoke, main coil is connected in series and by a current source supply, main coil is arranged on the long limit of described window frame shape yoke between two parties; Described lateral coil is wrapped in the long limit of described window frame shape yoke and is separately positioned on two ends of described main coil, and lateral coil is connected in series, and by a current source supply, or each lateral coil can be respectively by independent current source supply.
9. according to the described beam ion source, indirect-heating broadband for ion beam system of claim 7, it is characterized in that: described main coil further comprises a plurality of independent small coils, each independent small coil is connected to an independently current and power supply, and polarity and the intensity of the current and power supply of each independent small coil are adjusted; The magnetic material cover is inserted in space between each adjacent small coil.
10. broadband ion beam system, it is characterized in that: comprise the described beam ion source, indirect-heating broadband for ion beam system of claim 1, the extraction electrode unit, the ion beam transport device, ion beam measuring unit and target target chamber, described ion beam transport device is for transmitting, focus on, accelerate or slow down the surface of described broadband ion beam to target, and the beam ion source, indirect-heating broadband that is used for ion beam system is drawn, carried and arrive the target target chamber with the ion beam transport device by the extraction electrode unit; Described ion beam measuring unit is measured the angle of ion beam current, ion beam current density distribution and the ion beam of ion beam.
11. broadband ion beam system according to claim 10 is characterized in that: described beam ion source, indirect-heating broadband for ion beam system comprise arc chamber, two indirectly heated cathode, multi-channel gas inlet device, window frame type source magnet, restriction source magnet downstream the Distribution of Magnetic Field scope magnetic shielding device, be placed on the internal electrode of described arc chamber inside and give described arc chamber, two indirectly heated cathode, window frame source magnet and be placed on the power supply of the internal electrode power supply of described arc chamber inside.
12. broadband ion beam system according to claim 10 is characterized in that: described ion beam transport device comprises mass analysis cell, deflection unit and accelerator module; The transmission of described ion beam transport device focuses on, accelerate or the described broadband ion beam that slows down to target surface; Described ion beam measuring unit is measured the ion beam current of ion beam, the angle of ion beam current density distribution and ion beam, the measurement data of electron beam current density distribution is used to the main coil of FEEDBACK CONTROL window frame shape magnet, the adjusting of lateral coil, or the adjusting of a plurality of internal electrodes of FEEDBACK CONTROL is to obtain uniform broadband ion beam.
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| CN201310089797.2A CN103247505B (en) | 2013-03-20 | 2013-03-20 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
| PCT/CN2014/073631 WO2014146569A1 (en) | 2013-03-20 | 2014-03-18 | Broadband ion beam system, and indirectly heated broadband beam ion source used for ion beam system |
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| CN201310089797.2A CN103247505B (en) | 2013-03-20 | 2013-03-20 | For beam ion source, indirect-heating broadband and the broadband ion beam system of ion beam system |
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| WO2014146569A1 (en) | 2014-09-25 |
| CN103247505B (en) | 2016-01-27 |
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