CN117387759A - Light sensor and color temperature analysis method - Google Patents

Abstract

The application discloses a light sensor and a color temperature analysis method. The light sensor includes: the optical filter film layer at least comprises a first film layer and a second film layer; the first film layer comprises a first filtering unit formed by a first photoresist material and is used for filtering light to be detected to obtain a first filtering light of a first wave band, wherein the first wave band is a light transmission wave band of the first photoresist material; the second film layer is arranged below the first film layer and comprises a second filtering unit formed by a second photoresist material, and the second filtering unit is used for filtering the first filtered light to obtain a second filtering light with a first wave band and a second wave band overlapped with each other, and the second wave band is a light transmission wave band of the second photoresist material; the sensing component is arranged below the second film layer and is used for sensing and analyzing the spectrum information of the second filtering light. The light that awaits measuring in this application filters through first rete and second rete in proper order, obtains the second of first wave band and second wave band coincidence wave band and filters the light to be convenient for separate the light that awaits measuring into the filtered light of more quantity and carry out the analysis, can more comprehensive analysis light that awaits measuring.

Description

Light sensor and color temperature analysis method

Technical Field

The application relates to the technical field of light detection, in particular to a light sensor and a color temperature analysis method.

Background

CCT (correlated colour temperature, correlated color temperature) is an important index for detecting and evaluating parameters of light, and how to separate the light to be measured into filtered light with different wavelengths is important for correlated color temperature analysis. At present, the prior art filters the light to be measured based on the red, green and blue primary colors to obtain corresponding filtered light, but the types of the filtered light which are obviously separated are fewer, and the parameters of the light to be measured cannot be fully analyzed.

Disclosure of Invention

The embodiment of the application provides a light sensor and a color temperature analysis method, light to be measured is filtered through a first film layer and a second film layer in sequence, and second filtering light of a first wave band and a second wave band overlapped wave band is obtained, so that the light to be measured is conveniently separated into more filtered light for analysis, and the light to be measured can be analyzed more comprehensively.

In a first aspect, embodiments of the present application provide a light sensor, including:

the optical filter film layer at least comprises two film layers, wherein the two film layers are a first film layer and a second film layer respectively;

the first film layer comprises a first filtering unit formed by a first photoresist material, wherein the first filtering unit is used for filtering light to be detected to obtain first filtering light of a first wave band, and the first wave band is a light transmission wave band of the first photoresist material;

the second film layer is arranged below the first film layer and comprises a second filtering unit formed by a second photoresist material, the second filtering unit is used for filtering the first filtering light to obtain a second filtering light of a wave band overlapped with the first wave band and a second wave band, and the second wave band is a light transmission wave band of the second photoresist material;

the sensing component is arranged below the second film layer and is used for sensing and analyzing the spectrum information of the second filtering light.

In some embodiments, the wavelength corresponding to the transmittance extremum of the first band is different from the wavelength corresponding to the transmittance extremum of the second band.

In some embodiments, the transmittance extremum of the coincident band of the first band of wavelengths and the second band of wavelengths is between 20% and 80%.

In some embodiments, the first film layer is provided with a plurality of first filtering units, the second film layer is provided with a plurality of second filtering units, and the first filtering units and the second filtering units form a plurality of filtering channels in a one-to-one correspondence.

In some embodiments, the first photoresist material of the two first filter elements is different in any two filter channels; and/or the second photoresist material of the two second filter units is different.

In some embodiments, the target first filter unit and the target second filter unit in the target filter channel have the same light transmission band; and/or the wavelength corresponding to the transmittance extremum of the target first wave band is different from the wavelength corresponding to the transmittance extremum of the target second wave band, the transmittance extremum of the coincident wave band of the target first wave band and the target second wave band is set between 20% and 80%, the target first wave band is the light transmission wave band of the target first filter unit, and the target second wave band is the light transmission wave band of the target second filter unit.

In some embodiments, the light sensor further comprises a visible light filter layer disposed on the first film layer.

In some embodiments, the visible light filtering layer has a filtering wavelength range of 380nm to 780nm.

In some embodiments, the light sensor further comprises a transparent connection disposed between the first film layer and the visible light filtering layer.

In a second aspect, the present application provides a color temperature analysis method applied to the photo sensor described in any one of the above, including:

filtering light to be detected through a first film layer of the optical sensor to obtain first filtering light of a first wave band, wherein the first wave band is a light transmission wave band of the first film layer;

filtering light to be detected through a second film layer of the optical sensor to obtain a first filtering light of a first wave band and a second wave band which are overlapped, wherein the second wave band is a light transmission wave band of the second film layer;

inductively analyzing the spectral information of the second filtered light;

and analyzing the color temperature information according to the plurality of second filtered spectrum information.

According to the optical sensor and the color temperature analysis method, the first film layer and the second film layer are stacked on the sensing assembly, light to be detected sequentially passes through the first film layer and the second film layer to be filtered, so that second filtering light of a first wave band and a second wave band overlapped with each other is obtained, namely light of another wave band except the first wave band and the second wave band can be obtained from the light to be detected through filtering, and finally filtered light of more than photoresist material types is obtained, and the light to be detected can be analyzed more comprehensively.

Drawings

Technical solutions and other advantageous effects of the present application will be made apparent from the following detailed description of specific embodiments of the present application with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of a photo sensor according to an embodiment of the present application;

FIG. 2 is a graph of transmittance versus wavelength for 3 types of photoresist materials in one embodiment of the present application;

FIG. 3 is a graph showing transmittance versus wavelength for 5 types of photoresist materials in one embodiment of the present application;

FIG. 4 is a schematic diagram of a photo sensor according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a structure of a photo sensor according to an embodiment of the present application;

FIG. 6 is a schematic wavelength diagram of a second filtering of the photo sensor of FIG. 4 of the present application;

FIG. 7 is a wavelength schematic diagram of a second filter after the visible light filter layer of the photo sensor shown in FIG. 4 is disposed;

FIG. 8 is a schematic diagram of a photo sensor according to an embodiment of the present application;

FIG. 9 is a flow chart of a color temperature analysis method according to an embodiment of the present application;

FIG. 10 is a schematic diagram of spectral information and color matching functions of each filtered light in an embodiment of the present application.

Reference numerals:

1. a light-filtering film layer; 11. a first film layer; 111. a first filtering unit; 12. a second film layer; 121. a second filtering unit; 2. an induction assembly; 21. an induction unit; 22. a signal processing unit; 3. a filter channel; 4. visible light filter layer.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or are based on the orientation or positional relationship shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials.

Referring to fig. 1, the embodiment of the application provides a photo sensor, the photo sensor includes a sensing assembly 2 and a filtering film layer 1 disposed on the sensing assembly 2, which are stacked in sequence, the filtering film layer 1 includes at least two film layers, namely a first film layer 11 and a second film layer 12, the second film layer 12 is disposed between the sensing assembly 2 and the first film layer 11, the light to be measured irradiates the first film layer 11, and sequentially passes through the filtering of the first film layer 11 and the second film layer 12, so as to obtain a second filtering light with a preset wavelength, and then the sensing assembly 2 performs sensing analysis on the second filtering light, so as to obtain spectrum information of the second filtering light.

The first film layer 11 includes a first filter unit 111 formed of a first photoresist material, and the light transmission band of the first photoresist material is a first band, so that the light to be measured is filtered by the first filter unit 111 to obtain a first filtering light of the first band.

The second film layer 12 includes a second filter unit 121 formed of a second photoresist material, the light transmission band of the second photoresist material is a second band, the first filtered light obtained after being filtered by the first filter unit 111 is input into the second filter unit 121 for being filtered to obtain a second filtered light, and since the second filter unit 121 can only filter the light in the second band, the wavelength range of the first filtered light is the first band, and thus the first band and the second band have overlapping bands, and the wavelength range of the second filtered light is the overlapping band of the first band and the second band. No light is emitted from the second filter unit 121 if there is no coincident band of the first band and the second band.

It should be noted that, the filter film layer 1 may further include more than two film layers, and in this embodiment, the number of the film layers is not limited specifically, and only the overlapping bands of the light transmission bands of the filter units of each film layer need to be ensured, and finally the light is filtered by the multiple film layers, that is, the filtered light corresponding to the overlapping bands. For example, when the filter film layer 1 includes three film layers, namely, a film layer a, a film layer B and a film layer C, the film layer a corresponds to the light transmission band a, the film layer B corresponds to the light transmission band B, the film layer C corresponds to the light transmission band C, and similarly, the light transmission band a, the light transmission band B and the light transmission band C have the overlapping band D, the light to be measured is filtered by the film layer a, the film layer B and the film layer C to obtain the second filtering corresponding to the overlapping band D. And the number of the film layers contained in the optical filtering film layer 1 can be freely set, but a coincident wave band exists in the light transmission wave bands of all the film layers, and finally the second optical filtering obtained by filtering is the light corresponding to the coincident wave band.

In addition, if the filter film layer 1 is provided with a plurality of film layers for filtering, the arrangement order of the respective film layers has no influence on the final filtering effect thereof. For example, if the filter film 1 includes the film a, the film B, and the film C, the photo sensors are sequentially disposed in the order of the film a, the film B, and the film C, or sequentially disposed in the order of the film B, the film a, and the film C, without adjusting the photoresist materials of the filter units of the film a, the film B, and the film C, and the filtering effect of the photo sensors is not differentiated, so that the same band of filtered light is incident on the sensing element 2.

In addition, it should be noted that the light to be measured irradiates first onto the film layer farthest from the sensing element 2 among the filter film layers 1, and then irradiates onto the sensing element 2 finally through the filtration of each film layer of the filter film layers 1. The light to be measured may be light that has been filtered by the film layers, in addition to being filtered by the multiple film layers in the filter film layer 1, that is, some initial light is filtered by other film layers to obtain light to be measured, and then the light to be measured is irradiated onto the filter film layer 1. The number and types of other film layers for filtering the initial light are not particularly limited in this embodiment, and may be similar to those of the first film layer 11 and the second film layer 12 in this embodiment, or may be film layers required for the rest of the filtering.

In this embodiment, the first film layer 11 and the second film layer 12 are stacked on the sensing component 2, and the light to be measured sequentially passes through the first film layer 11 and the second film layer 12 to obtain a second filtering light with a first band and a second band overlapped with each other, i.e. light with another band outside the first band and the second band can be obtained by filtering the light to be measured, that is, filtered light with more than photoresist types can be obtained, and the light to be measured can be analyzed more comprehensively.

In some embodiments, in order to better filter and separate the light to be measured, to obtain light of another wavelength band except the first wavelength band and the second wavelength band, the first wavelength band and the second wavelength band need to overlap and intersect, but are not identical, and at the same time, one of the wavelength bands is not part of the other wavelength band, so that the wavelength corresponding to the transmittance extremum of the first wavelength band is different from the wavelength corresponding to the transmittance extremum of the second wavelength band. The schematic diagrams of the transmittance versus the wavelength corresponding to the three types of photoresist materials are shown in fig. 2, the schematic diagrams of the transmittance versus the wavelength corresponding to the five types of photoresist materials are shown in fig. 3, and the first photoresist material of the first filtering unit 111 and the second photoresist material of the second filtering unit 121 may be respectively provided with the photoresist materials corresponding to the two wave bands with the coincident wave bands in fig. 2 and 3, so as to obtain the second filtering with the coincident wave bands.

In some embodiments, if the overlapping bands of the first band and the second band are too many, it is indicated that the two types of filtered light obtained by filtering only the first filtering unit 111 and the second filtering unit 121 are relatively close, and the two types of filtered light obtained by filtering the first filtering unit 111 and the second filtering unit 121 are also relatively close, that is, the filtered light obtained by filtering is not very different, and the analysis meaning is not very great. If the overlapping frequency band of the first band and the second band is too small, the second filtering may not be obtained due to factors such as manufacturing process. Therefore, the proportion range of the first wave band and the second wave band overlapped wave band needs to be suitable, and the proportion range can be set according to the accuracy of the light filtering requirement.

The transmittance extremum of the coincident wave bands determines the type of the obtained second filtering light, so as to facilitate comparison between different photoresist materials, normalize the transmittance of the light transmission wave bands of the different photoresist materials, and then determine the coincident wave bands between each other, as shown in fig. 2 and 3, wherein the transmittance is normalized. On the basis of normalizing the penetration rate, the penetration rate extreme value of the coincident wave band of the first wave band and the second wave band is arranged between 20% and 80%, so that the obtained second filtering light of the coincident wave band is larger in light difference corresponding to the first wave band and light difference corresponding to the second wave band, and the light to be measured can be analyzed more comprehensively.

In some embodiments, the first film layer 11 is provided with a plurality of first filtering units 111, the second film layer 12 is provided with a plurality of second filtering units 121, the first filtering units 111 and the second filtering units 121 are in one-to-one correspondence to form a plurality of filtering channels, and each filtering channel obtains a second filtering light with a different wave band. As shown in fig. 4, the first film 11 is provided with 5 first filtering units 111, the second film 12 is provided with 5 second filtering units 121, and correspondingly, 5 filtering channels are formed, so that 5 second filtering waves with different wave bands can be obtained. Correspondingly, the sensing component 2 senses the spectrum information of the second filtering light with a plurality of different wave bands, and the color temperature information of the light to be detected is determined by combining the spectrum information analysis of the second filtering light.

In some embodiments, when the first film 11 is provided with a plurality of first filter units 111, the second film 12 is provided with a plurality of second filter units 121, the first photoresist material of the first filter units 111, the second photoresist material of the second filter units 121, and the first photoresist material of the first filter units 111 and the second photoresist material of the second filter units 121 may be the same or different.

However, in order to avoid that the second filtered light obtained by the two filter channels 3 is the same, it is necessary to ensure that at least one of the first photoresist materials of the two first filter units 111 and the second photoresist materials of the two second filter units 121 is different in any two filter channels.

That is, for any two filter channels, if the first photoresist materials of the two first filter units 111 are the same, the second photoresist materials of the corresponding two second filter units 121 are different. If the second photoresist materials of the two second filter units 121 are the same, the first photoresist materials of the corresponding two first filter units 111 are different. Further, the first photoresists of the two first filter units 111 may be different, and the second photoresists of the corresponding two second filter units 121 may be different. In addition, since the arrangement order of the film layers does not affect the filtering result, the first photoresist material and the second photoresist material may be the same. Wherein, the filter units with the same photoresist material in the same film layer can be integrally formed by a coating process at one time.

In some embodiments, for the target first filter unit and the target second filter unit in the same target filter channel, the corresponding first photoresist material and second photoresist material may or may not be the same, so as to obtain the filter channel 3 with more than photoresist material types, and further obtain the filtered light with more than photoresist material types. The maximum number of filter channels 3 also depends on the type of photoresist. For example, when the photoresist material includes red and green, the filter channel 3 includes at most three colors of red, red and green. The type of photoresist is not particularly limited.

And for the situation that the first photoresist material and the second photoresist material corresponding to the first filtering unit and the second filtering unit in the same target filtering channel are the same, only the first filtering unit or the second filtering unit is arranged, and the filtering effect is the same as that of simultaneously arranging the first filtering unit and the second filtering unit.

In addition, for the case that the first target filter unit and the second target filter unit in the same target filter channel are different in the corresponding first photoresist material and the second photoresist material, the setting requirements of the photoresist materials of the first target filter unit and the second target filter unit are the same as those described in the above embodiments, that is, the wavelength corresponding to the transmittance extremum of the first target band is different from the wavelength corresponding to the transmittance extremum of the second target band, and the transmittance extremum of the coincident band of the first target band and the second target band is set between 20% and 80%.

Wherein the number of filter channels 3 is further limited based on the above-mentioned requirements for the arrangement of the photoresist material of the target first filter unit and the target second filter unit. When the number of the photoresist materials is 3 as shown in fig. 2, the number of the corresponding filter channels 3 is at most 5, and the target first filter unit and the target second filter unit cannot be respectively set as the photoresist materials corresponding to the two light transmission ranges with non-adjacent transmittance extremum. Similarly, when the number of photoresist materials is 5 as shown in fig. 3, the number of the corresponding filter channels 3 is at most 9. It should be noted that the maximum number of filter channels 3 is an upper limit, but fewer than the maximum number of filter channels 3 may be set according to the filter requirements. For example, when the number of the resist material is 5 as shown in fig. 3, the number of the corresponding filter channels 3 is set to 6 or 7, and the present embodiment is not particularly limited.

In this embodiment, by increasing the number of the filtered film layers, the filtering units with different film layers are provided with different photoresist material combinations to filter out different continuous filtered light, so that the light to be measured is separated into the filtered light with more types than the photoresist material for analysis, and the light to be measured can be analyzed more comprehensively.

In some embodiments, the optical sensor is configured to analyze spectral information of visible light in the light to be measured, that is, the second filtering light of different types after being filtered by each film layer is visible light, so as to avoid interference of non-visible light, as shown in fig. 5, the optical sensor further includes a visible light filtering layer 4 disposed on the first film layer 11, where the visible light filtering layer 4 is configured to filter light of a non-visible light band, and reduce influence of an irrelevant band on an analysis result. The wavelengths of each second filter after filtering by the photo-sensor shown in fig. 4 are shown in fig. 6, which contains light in the non-visible light band. The wavelengths of the second filters after the visible light filter layer 4 is provided on the first film layer 11 of the photo sensor shown in fig. 4 are as shown in fig. 7, and the non-visible light is filtered.

In some embodiments, the visible light filter layer 4 has a filter wavelength range of 380nm to 780nm. In order to avoid missing visible light, the overall transmission range of the integrated statistics of the transmission bands for all photoresist materials is over the range of 380nm to 780nm, as shown in fig. 2 and 3. Note that, fig. 2 and 3 are examples of light transmission bands corresponding to the photoresist, and should not be construed as being limited thereto.

In addition, the light transmission wave bands corresponding to the photoresist materials should be reasonably distributed in the whole light transmission range, and the whole light transmission range is beyond the range of 380nm to 780nm, so that the omission of the wave bands is avoided. Therefore, the light transmission wave bands corresponding to all the photoresist materials are orderly ordered according to the wavelength size corresponding to the transmittance extremum, and the two adjacent light transmission wave bands of the transmittance extremum are partially overlapped.

In some embodiments, the visible light filtering layer 4 may be directly disposed on the first film layer 11, or a colorless transparent connection portion (not shown in the figure) may be disposed between the first film layer 11 and the visible light filtering layer 4 for connecting the first film layer 11 and the visible light filtering layer 4, where when the transparent connection portion is disposed between the first film layer 11 and the visible light filtering layer 4, the filtering process of the visible light filtering layer 4 and the filtering process of the first film layer 11 are isolated to a certain extent, so that they do not affect each other, and the final filtering effect is better.

In this embodiment, through the wavelength size corresponding to the transmittance extremum and the overlapping portion of two light-transmitting wavebands adjacent to the transmittance extremum, the photoresist materials with reasonable light-transmitting wavebands layout are selected in the whole light-transmitting range, so that light with a certain wavelength is prevented from being omitted and filtered, and meanwhile, the utilization rate of each photoresist material is maximized.

In some embodiments, as shown in fig. 8, the sensing assembly 2 includes a sensing unit 21 and a signal processing unit 22, where the sensing unit 21 is disposed below the second film layer 12, and the sensing unit 21 is configured to receive each second filtering light obtained by collecting each filtering channel 3 and finally filtering the second filtering light. The signal processing unit 22 analyzes each second filtered light collected by the sensing unit 21 to obtain corresponding spectrum information, for example, converts the collected plurality of second filtered light signals into digital signal spectrum information, and then analyzes the digital signal spectrum information to obtain corresponding spectrum information.

In some embodiments, the wavelengths of the second filters obtained through the filtering channels 3 are different, and in order to analyze the different second filtered lights independently, the sensing unit 21 includes a plurality of photoelectric elements (not shown in the figure), where the photoelectric elements are in one-to-one correspondence with the filtering channels 3, and each photoelectric element senses the second filters after the filtering of one filtering channel 3. The type of the photoelectric element is not particularly limited, and may be, for example, a diode or the like.

In addition, the optical sensors can be spliced to obtain the optical sensing device, the sensing assemblies 2 of the optical sensors can be integrated to realize modularization of the optical sensing device, and the optical sensors can be connected together through other components to form the optical sensing device. Wherein the arrangement of the first filter unit 111 and the second filter unit 121 of each photo sensor in the photo sensing device is the same, i.e. the filter channels of each photo sensor are the same. For example, in the light sensing device, the light sensor a includes three filtering channels, namely red, green and green, and the light sensor B and even the light sensor C also includes three filtering channels, namely red, green and green. However, the arrangement order of the filter channels of the different light sensors is not required, and the filter channels may be the same or different. For example, the three filter channels included in the photo sensor a are sequentially red, green and green, the three filter channels included in the photo sensor B are sequentially red, red green and green, and the three filter channels included in the photo sensor C are sequentially red, green and red green. The optical sensing devices can acquire multiple groups of color temperature information by splicing the optical sensors, and the problem that the result error is large due to the fact that only single data are acquired and influenced by accidental factors is avoided.

Referring to fig. 1 to 9, an embodiment of the present application provides a color temperature analysis method applied to any one of the above-mentioned photo sensors, the method includes:

s10, filtering light to be detected through a first film layer 11 of the optical sensor to obtain a first filtering light of a first wave band, wherein the first wave band is a light transmission wave band of the first film layer 11;

s20, filtering light to be detected through a second film layer 12 of the optical sensor to obtain a first filtering light of a first wave band and a second wave band overlapped with each other, wherein the second wave band is a light transmission wave band of the second film layer 12;

s30, sensing and analyzing the spectrum information of the second filtering light;

s40, analyzing color temperature information according to the spectrum information of the plurality of second filtering filters.

Specifically, light to be measured (light) irradiates the photo sensor, and is filtered by the first filter unit 111 on the first film layer 11 to obtain a first filtering light of a first band, wherein the first filter unit 111 is formed by a first photoresist material, and a light transmission band of the first photoresist material is the first band. Then, the first filtered light is filtered by the second filter unit 121 on the second film layer 12 to obtain a second filtered light with a first band corresponding to a coincident band of the second band, where the second filter unit 121 is formed of a second photoresist material, and a light transmission band of the second photoresist material is the second band. The structures of the photo sensor are described in the above embodiments, and the embodiments are not repeated here.

The wavelengths of the second filters are different from each other, and the second filters are collected by the respective Photocells (PD) of the sensing unit 21. The signal processing unit 22 converts the collected second filtered optical signals into digital signal spectral information for each photocell and curve-fits the spectral information. And then converting the plurality of second filtered spectrum information to obtain tri-stimulus values, for example converting the tri-stimulus values into coordinates in CIE XYZ space, facilitating quantitative calculation, and finally determining color temperature information according to the tri-stimulus values. As shown in fig. 10, the solid line is a color matching function (CMF, color Matching Function), the dotted line is the spectrum information of the processed filtered light, the intervals between the second filtered lights are clear, and the second filtered lights are separated from each other, and the curves of the second filtered lights are close to the color matching function, that is, the curves obtained by the above processing method restore the color matching function better, and the finally calculated correlated color temperature is more accurate.

According to the embodiment, the light to be detected can be better filtered and separated to obtain a second filtering light which is convenient to analyze, the color matching function (CMF, color Matching Function) is better restored, and the finally calculated correlated color temperature (CCT, correlated Color Temperature) is more accurate.

In this embodiment, the descriptions of the foregoing embodiments are focused on each embodiment, and for a portion of one embodiment that is not described in detail, reference may be made to the related descriptions of other embodiments.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above describes a photo sensor and a color temperature analysis method provided in the embodiments of the present application in detail, and specific examples are applied herein to illustrate the principles and embodiments of the present invention, and the above description of the embodiments is only for helping to understand the method and core ideas of the present invention; meanwhile, as those skilled in the art will vary in the specific embodiments and application scope according to the ideas of the present invention, the present description should not be construed as limiting the present invention in summary.

Claims (10)

1. A light sensor, comprising:

the optical filter film layer at least comprises two film layers, wherein the two film layers are a first film layer and a second film layer respectively;

the first film layer comprises a first filtering unit formed by a first photoresist material, wherein the first filtering unit is used for filtering light to be detected to obtain first filtering light of a first wave band, and the first wave band is a light transmission wave band of the first photoresist material;

the second film layer is arranged below the first film layer and comprises a second filtering unit formed by a second photoresist material, the second filtering unit is used for filtering the first filtering light to obtain a second filtering light of a wave band overlapped with the first wave band and a second wave band, and the second wave band is a light transmission wave band of the second photoresist material;

the sensing component is arranged below the second film layer and is used for sensing and analyzing the spectrum information of the second filtering light.

2. The optical sensor of claim 1, wherein the wavelength corresponding to the transmittance extremum of the first wavelength band is different from the wavelength corresponding to the transmittance extremum of the second wavelength band.

3. The optical sensor of claim 1, wherein the transmittance extremum of the coincident bands of the first band and the second band is between 20% and 80%.

4. The light sensor of claim 1, wherein the first film layer is provided with a plurality of first filter units, the second film layer is provided with a plurality of second filter units, and the first filter units and the second filter units form a plurality of filter channels in one-to-one correspondence.

5. The light sensor of claim 4, wherein the first photoresist material of the two first filter units is different in any two filter channels; and/or the second photoresist material of the two second filter units is different.

6. The optical sensor of claim 4 or 5, wherein the target first filter unit and the target second filter unit in the target filter channel have the same light transmission band; and/or the wavelength corresponding to the transmittance extremum of the target first wave band is different from the wavelength corresponding to the transmittance extremum of the target second wave band, the transmittance extremum of the coincident wave band of the target first wave band and the target second wave band is set between 20% and 80%, the target first wave band is the light transmission wave band of the target first filter unit, and the target second wave band is the light transmission wave band of the target second filter unit.

7. The light sensor of claim 1, further comprising a visible light filter layer disposed on the first film layer.

8. The light sensor of claim 7, wherein the visible light filter layer has a filter wavelength in the range of 380nm to 780nm.

9. The light sensor of claim 7, further comprising a transparent connection disposed between the first film layer and the visible light filter layer.

10. A color temperature analysis method applied to the photo sensor according to any one of claims 1 to 9, comprising:

filtering light to be detected through a first film layer of the optical sensor to obtain first filtering light of a first wave band, wherein the first wave band is a light transmission wave band of the first film layer;

filtering light to be detected through a second film layer of the optical sensor to obtain a first filtering light of a first wave band and a second wave band which are overlapped, wherein the second wave band is a light transmission wave band of the second film layer;

inductively analyzing the spectral information of the second filtered light;

and analyzing the color temperature information according to the plurality of second filtered spectrum information.