CN117374731A - Method for manufacturing oxidation-limited VCSEL and oxidation-limited VCSEL - Google Patents
Method for manufacturing oxidation-limited VCSEL and oxidation-limited VCSEL Download PDFInfo
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- CN117374731A CN117374731A CN202311310128.3A CN202311310128A CN117374731A CN 117374731 A CN117374731 A CN 117374731A CN 202311310128 A CN202311310128 A CN 202311310128A CN 117374731 A CN117374731 A CN 117374731A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 37
- 238000004381 surface treatment Methods 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 36
- 230000003647 oxidation Effects 0.000 claims abstract description 29
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 29
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 12
- 229920006395 saturated elastomer Polymers 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 45
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000009279 wet oxidation reaction Methods 0.000 description 5
- 229910017107 AlOx Inorganic materials 0.000 description 4
- 229910005535 GaOx Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910016569 AlF 3 Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses an oxidation limiting VCSEL manufacturing method, which comprises the following steps: etching the closed groove on the epitaxial wafer to form an active region platform in the surrounding area of the closed groove, and oxidizing the side wall of the active region platform to form an oxidation limiting structure in the active region platform; the inner ring side wall of the closed groove is perpendicular to the bottom surface of the groove, the outer ring side wall of the closed groove is an inclined plane forming an included angle of 35-75 degrees with the bottom surface of the groove, and the width of the closed groove is gradually increased upwards from the bottom surface of the groove; the etching and oxidizing steps also comprise two plasma surface treatments, wherein the first plasma surface treatment uses inert gas as a working medium, and the second plasma surface treatment uses NF 3 And/or H 2 As a working medium. The invention also discloses an oxidation-limited VCSEL. The invention can effectively eliminate low saturated vapor pressure substances, surface defects and non-stoichiometric substances on the side wall of the active region platform, and improve the performance and reliability of the laser.
Description
Technical Field
The invention relates to a manufacturing method of an oxidation-limited VCSEL (Vertical-Cavity Surface-Emitting Laser), belonging to the technical field of semiconductor Laser manufacturing.
Background
The vertical cavity surface emitting laser has higher optical power and can well control the transverse mode, so that the vertical cavity surface emitting laser has great application prospect in the fields of optical communication, gesture sensing sensors, printing, magnetic storage and the like. But the device structure has the defects of thin active area, short cavity length, smaller single-layer gain and the like,to improve the effective photon confinement capability, an oxide confinement DBR (Distributed Bragg Reflector, distributed bragg mirror) structure, commonly referred to as an oxide confinement VCSEL, is currently used. The oxidation limiting VCSEL adopts wet oxidation process to make Al with high aluminum content in DBR layer x Ga 1-x Oxidation of As (x.gtoreq.0.95) layer to AlO x The DBR high aluminum content layer positioned right above the active layer is not oxidized to form an annular circular current channel, and the oxidation hole formed by the oxidation limiting structure has very good lateral control capability on the current injected into the active region, so that the lateral current is almost realized. Meanwhile, the oxidation hole structure can also transversely restrict the light emitted by the laser active region to a certain extent, so that the mode of the laser is reduced, and the laser can be well stabilized due to the mode reduction.
The structure of a typical oxidation-limited VCSEL is shown in FIG. 1, and comprises a GaAs substrate 1, a buffer layer 2, an N-type DBR layer 3, a quantum well active layer 4, a P-type DBR layer 5, an oxidation-limited layer 6, a dielectric layer 7, a P-type metal 8 and an N-type metal 9; the existing oxidation-limited VCSEL fabrication process is: firstly etching a closed vertical groove (usually in a ring shape) on an epitaxial wafer in an etching mode, exposing the DBR with high aluminum content to be oxidized, and forming an active region platform in a surrounding area of the closed groove; then the side wall oxidation is carried out on the active region platform, and the outer part of the DBR with high aluminum content to be oxidized in the active region platform is oxidized into AlO x The middle part not oxidized forms an oxidation hole as a current channel, and the structure is an oxidation limiting structure. As shown in fig. 1, the outer ring sidewall 10 and the active region mesa sidewall of the closed trench of the conventional oxide-confined VCSEL are perpendicular to the trench bottom surface.
DBR is composed of alternate GaAs and Al x Ga 1-x As laminated composition, etching gas is BCl 3 And Cl 2 Or SiCl 4 And Cl 2 . The etching process produces a large amount of GaCl with low saturated vapor pressure x And AlCl x Such materials are relatively volatile under the influence of ion bombardment. The bottom surface of the closed groove is continuously subjected to ion bombardment in the etching process, so that the substances are not easy to remain on the bottom surface of the groove. But at the main partThe side wall of the platform in the active region has little effect of ion bombardment, and a large amount of substances are attached to the side wall of the platform in the active region. After the etching is stopped, gaCl remained on the surface x And AlCl x Cl in the substances reacts with water vapor in the air to form HCl, HCl and Al x Ga 1-x Al in As interacts to form AlO x And Cl, which acts as a catalyst in the process, the Al of the laminated DBR layer is continuously etched away to form AlO x . A large amount of AlO x Form punctiform by-products on the side wall of the active region platform, and meanwhile, al x Ga 1-x The continuous consumption of Al in the As layer causes volume shrinkage of the DBR layer, and the periphery of the active region platform generates great stress, which seriously affects the stability of the active region platform, the repeatability of wet oxidation and the reliability of the laser.
The low saturated vapor pressure substances remained on the side wall of the active region platform are insoluble in organic solvents, the substances are difficult to remove in the photoresist removing process after etching is stopped, the photoresist removing process is prolonged, the subsequent wet oxidation effect is affected by trace residues of the substances, and the quality of a dielectric film deposited on the side wall of the active region platform is seriously limited, so that the performance of a laser is seriously limited.
Furthermore, the epitaxial layers are composed of alternating Al x Ga 1-x The As layer and the GaAs layer are formed, and a large number of defects are formed on the side wall of the active region platform in the etching process. These defects form a large number of surface recombination centers, which are channels for laser leakage, affecting the performance and reliability of the laser. The sidewall surface of the active region before wet oxidation has a large amount of GaO with non-stoichiometric ratio formed by natural oxidation x And AlO x The material is a leakage center of the laser, and seriously affects the performance and reliability of the laser.
Disclosure of Invention
The invention aims to solve the technical problems of overcoming the defects of the prior art and providing an oxidation-limited VCSEL manufacturing method which can effectively eliminate low saturated vapor pressure substances, surface defects and non-stoichiometric substances on the side wall of an active region platform and improve the performance and reliability of a laser.
The technical scheme adopted by the invention specifically solves the technical problems as follows:
an oxidation-limited VCSEL fabrication method, comprising: etching the closed groove on the epitaxial wafer to form an active region platform in the surrounding area of the closed groove, and oxidizing the side wall of the active region platform to form an oxidation limiting structure in the active region platform; the inner ring side wall of the closed groove is perpendicular to the bottom surface of the groove, the outer ring side wall of the closed groove is an inclined plane forming an included angle of 35-75 degrees with the bottom surface of the groove, and the width of the closed groove is gradually increased upwards from the bottom surface of the groove; the step of carrying out plasma surface treatment on the closed groove twice is also included between the etching step and the oxidizing step, wherein the first plasma surface treatment uses inert gas as a working medium, and the second plasma surface treatment uses NF 3 And H is 2 At least one of them is used as a working medium.
Preferably, the first surface plasma treatment is performed in the same etching chamber after the etching step is completed.
Preferably, the second plasma surface treatment is performed with NF 3 And H is 2 As a working medium.
Further preferably, NF 3 The volume ratio of the mixed gas is 10-30%.
Still more preferably, the total flow of the mixed gas is 20-100 sccm, the pressure is 0.2-1 Pa, the power is 10-50W, and the surface treatment time is 1-5 min
Preferably, the oxidation-limited VCSEL fabrication method further comprises a step of depositing a dielectric layer on the surface of the epitaxial wafer after the oxidation step.
Further preferably, the dielectric layer is one or more than two of the following materials: siO (SiO) 2 、Al 2 O 3 、TiO 2 、SiN x SiON; the thickness of the dielectric layer is 350-1200 and nm.
Preferably, the first plasma surface treatment uses Ar gas as a working medium; the first plasma surface treatment is divided into two stages, and the technological parameters of the first stage are as follows: ar gas flow is 50-100 sccm, pressure is 0.1-0.5 Pa, power is 300-1000W, and surface treatment time is 1-10 min; the technological parameters of the second stage are as follows: ar gas flow is 10-50 sccm, pressure is 0.2-1 Pa, power is 30-200W, and surface treatment time is 0.5-5 min.
The following technical scheme can be obtained based on the same inventive concept:
an oxidation limited VCSEL fabricated using the method of any of the above claims.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the invention, a closed groove with the side wall of the outer ring being a specific angle inclined plane is constructed in the process of etching the active area platform, and plasma surface treatment of two different working mediums is combined; the inclined plane structure can effectively reflect ions or neutral particles with higher energy incident to the inclined plane to the surface of the side wall of the active region platform in the etching process, can effectively remove low saturated vapor pressure substances attached to the surface of the side wall of the active region platform, and can avoid AlO (aluminum oxide) by removing the substances x The dot-shaped byproducts and stress are generated and the photoresist stripping efficiency is quickened; then, inert gas plasma surface treatment is carried out on the surface of the side wall of the active region platform by means of the reflection effect of the inclined plane structure, inert gas ions reflected to the surface of the side wall of the active region platform have higher kinetic energy, and a large number of defects formed on the side wall of the active region platform in the etching process can be bombarded; finally, NF is carried out on the surface of the side wall of the platform of the active region by means of the reflection effect of the inclined plane structure 3 And/or H 2 Plasma surface treatment, F and N react with GaOx and AlOx to replace O element in GaOx and AlOx to form stable stoichiometric GaF 2 、AlF 3 The GaN, alN and H elements can repair suspension bonds such as Ga, al and the like, and can remove trace photoresist remained on the surface of the side wall of the active region platform without damage; in addition, in the process of depositing the dielectric film after oxidation, the inclined plane can effectively reflect high-energy particles incident to the inclined plane to the side wall of the active region platform to form a bombardment effect on the side wall of the active region platform, and the process can effectively remove impurities of the dielectric film and improve the quality of the dielectric film. Through the composite action, the low saturated vapor pressure substance and the surface defect on the side wall of the active region platformThe trapped, non-stoichiometric substances and residual photoresist are effectively eliminated, the protection performance of the dielectric layer is enhanced, and the performance and reliability of the laser are greatly improved.
Drawings
FIG. 1 is a schematic diagram of a typical prior art oxidation limited VCSEL;
FIG. 2 is a schematic diagram of the structure of an oxidation limited VCSEL of the present invention;
fig. 3 to 11 are schematic views illustrating a fabrication process of the oxidation-limited VCSEL of the present invention.
The reference numerals in the drawings have the following meanings:
1. GaAs substrate, 2, buffer layer, 3, N type DBR layer, 4, quantum well active layer, 5, P type DBR layer, 6, oxidation limiting layer, 7, dielectric layer, 8, P type metal, 9, N type metal, 10, vertical outer ring side wall, 11, inclined plane outer ring side wall.
Description of the embodiments
Aiming at the defects of the prior art, the invention aims to improve the manufacturing process of the oxidation-limited VCSEL, and a closed groove with the outer ring side wall being a specific angle inclined plane is constructed in the process of etching the active region platform, and plasma surface treatment of two different working mediums is combined.
The invention provides an oxidation limiting VCSEL manufacturing method, which comprises the following steps: etching the closed groove on the epitaxial wafer to form an active region platform in the surrounding area of the closed groove, and oxidizing the side wall of the active region platform to form an oxidation limiting structure in the active region platform; the inner ring side wall of the closed groove is perpendicular to the bottom surface of the groove, the outer ring side wall of the closed groove is an inclined plane forming an included angle of 35-75 degrees with the bottom surface of the groove, and the width of the closed groove is gradually increased upwards from the bottom surface of the groove; the step of carrying out plasma surface treatment on the closed groove twice is also included between the etching step and the oxidizing step, wherein the first plasma surface treatment uses inert gas as a working medium, and the second plasma surface treatment uses NF 3 And H is 2 At least one of them is used as a working medium.
Preferably, the first surface plasma treatment is performed in the same etching chamber after the etching step is completed.
Preferably, the second plasma surface treatment is performed with NF 3 And H is 2 As a working medium.
Further preferably, NF 3 The volume ratio of the mixed gas is 10-30%.
Still more preferably, the total flow of the mixed gas is 20-100 sccm, the pressure is 0.2-1 Pa, the power is 10-50W, and the surface treatment time is 1-5 min
Preferably, the oxidation-limited VCSEL fabrication method further comprises a step of depositing a dielectric layer on the surface of the epitaxial wafer after the oxidation step.
Further preferably, the dielectric layer is one or more than two of the following materials: siO (SiO) 2 、Al 2 O 3 、TiO 2 、SiN x SiON; the thickness of the dielectric layer is 350-1200 and nm.
Preferably, the first plasma surface treatment uses Ar gas as a working medium; the first plasma surface treatment is divided into two stages, and the technological parameters of the first stage are as follows: ar gas flow is 50-100 sccm, pressure is 0.1-0.5 Pa, power is 300-1000W, and surface treatment time is 1-10 min; the technological parameters of the second stage are as follows: ar gas flow is 10-50 sccm, pressure is 0.2-1 Pa, power is 30-200W, and surface treatment time is 0.5-5 min.
For the convenience of public understanding, the following detailed description of the technical solution of the present invention is provided by a specific embodiment in conjunction with the accompanying drawings:
the structure of the oxidation limiting VCSEL provided by the invention is shown in figure 2, and the structure also comprises a GaAs substrate 1, a buffer layer 2, an N-type DBR layer 3, a quantum well active layer 4, a P-type DBR layer 5, an oxidation limiting layer 6, a dielectric layer 7, a P-type metal 8 and an N-type metal 9; which differs from the oxidation limited VCSEL of fig. 1 in that: in the process of etching to form the active region platform, the inner ring side wall of the etched closed groove is perpendicular to the bottom surface of the groove, and the outer ring side wall 11 of the closed groove is an inclined plane forming an included angle of 35-75 degrees with the bottom surface of the groove; and the closed trench is oxidized twice before the side wall of the active region platform is oxidizedPlasma surface treatment, wherein inert gas is used as a working medium in the first plasma surface treatment, and NF is used in the second plasma surface treatment 3 And H is 2 At least one of them is used as a working medium.
By adopting the technical scheme, the inclined plane structure can effectively reflect ions or neutral particles with higher energy incident to the inclined plane to the surface of the side wall of the active region platform in the etching process, can effectively remove low saturated vapor pressure substances attached to the surface of the side wall of the active region platform, and can avoid AlO (aluminum oxide) due to the removal of the substances x The dot-shaped byproducts and stress are generated and the photoresist stripping efficiency is quickened; then, inert gas plasma surface treatment is carried out on the surface of the side wall of the active region platform by means of the reflection effect of the inclined plane structure, inert gas ions reflected to the surface of the side wall of the active region platform have higher kinetic energy, and a large number of defects formed on the side wall of the active region platform in the etching process can be bombarded; finally, NF is carried out on the surface of the side wall of the platform of the active region by means of the reflection effect of the inclined plane structure 3 And/or H 2 Plasma surface treatment, F and N react with GaOx and AlOx to replace O element in GaOx and AlOx to form stable stoichiometric GaF 2 、AlF 3 The GaN, alN and H elements can repair suspension bonds such as Ga, al and the like, and can remove trace photoresist remained on the surface of the side wall of the active region platform without damage; in addition, in the process of depositing the dielectric film after oxidation, the inclined plane can effectively reflect high-energy particles incident to the inclined plane to the side wall of the active region platform to form a bombardment effect on the side wall of the active region platform, and the process can effectively remove impurities of the dielectric film and improve the quality of the dielectric film. Through the composite action, low saturated vapor pressure substances, surface defects, non-stoichiometric substances and residual photoresist on the side wall of the active region platform are effectively eliminated, the protective performance of a dielectric layer is enhanced, and the performance and reliability of the laser are greatly improved.
The method of fabricating the oxidation-limited VCSEL of the present invention is described in further detail below with one specific example:
step 1, coating photoresist on the surface of an epitaxial wafer shown in fig. 3, wherein the thickness of the photoresist is 5-15 um; exposing and developing the photoresist to obtain a photoresist mask with a circular ring structure in the middle, wherein the outer side of the circular ring structure is of an inclined surface structure, the inclined angle theta is 35-75 degrees, and the inner side of the circular ring structure is of a vertical surface structure, as shown in fig. 4;
step 2, etching the epitaxial wafer obtained in the step 1 by adopting an ICP dry etching process, wherein etching gas is Cl 2 /BCl 3 Or Cl 2 /SiCl 4 Etching a circular groove to 1-10 pairs of N-DBR (distributed Bragg reflector) on the lower layer of the quantum well layer, so that the high-aluminum layer of the layer to be oxidized is exposed, wherein the outer ring side wall of the circular groove is an inclined plane, the inclined angle theta of the inclined plane is 35-75 degrees, and the area surrounded by the circular groove is an active area platform, as shown in figure 5;
step 3, after etching is stopped, ar plasma surface treatment is carried out on the side wall of the active region platform in the etching chamber; in the embodiment, ar plasma surface treatment is performed in two steps, wherein the Ar gas flow in the first step is 50-100 sccm, the pressure is 0.1-0.5 Pa, the power is 300-1000W, the surface treatment time is 1-10 min, and the first step mainly removes low-saturated steam byproducts attached to the surface of the side wall of the active region platform; the Ar gas flow of the second step is 10-50 sccm, the pressure is 0.2-1 Pa, the power is 30-200W, the surface treatment time is 0.5-5 min, and the defects formed in the etching process are mainly removed in the second step; removing the photoresist to obtain an active region platform, see fig. 6;
step 4, performing NF on the epitaxial wafer obtained in the step 3 3 +H 2 Plasma surface treatment, NF 3 /(NF 3 +H 2 ) 0.1-0.3, total gas flow of 20-100 sccm, pressure of 0.2-1 Pa, power of 10-50W, and surface treatment time of 1-5 min, see FIG. 7; the subsequent process is the same as the prior art;
step 5, adopting wet oxidation process to make high-alumina layer Al of active region platform x Ga 1-x Oxidizing Al in the As layer to obtain an active region platform structure with an oxidation limiting structure, see FIG. 8;
step 6, depositing a dielectric layer on the epitaxial wafer obtained in the step 5, wherein the thickness of the dielectric layer is 350-1200 and nm, and the material is SiO 2 、Al 2 O 3 、TiO 2 、SiN x Single or multiple material composites such as SiONClosing films, wherein the film plating process is PECVD or ALD, see FIG. 9;
step 7, coating photoresist on the surface of the epitaxial wafer obtained in the step 6, wherein the thickness of the photoresist is 2-4 um; exposing and developing the photoresist, so that the photoresist is not arranged at the metal Via hole in the dielectric layer, and the rest area is covered by the photoresist; etching to remove the dielectric film at the position without photoresist and removing the photoresist to form a metal Via hole, see FIG. 10;
step 8, depositing metal, au, pt, ag, al and the like on the epitaxial wafer obtained in the step 7; see fig. 11; finally, splitting is carried out according to the requirement, and the oxidation limiting VCSEL laser or the laser array is obtained.
Claims (9)
1. An oxidation-limited VCSEL fabrication method, comprising: etching the closed groove on the epitaxial wafer to form an active region platform in the surrounding area of the closed groove, and oxidizing the side wall of the active region platform to form an oxidation limiting structure in the active region platform; the closed groove is characterized in that the inner ring side wall of the closed groove is perpendicular to the bottom surface of the groove, the outer ring side wall of the closed groove is an inclined plane forming an included angle of 35-75 degrees with the bottom surface of the groove, and the width of the closed groove is gradually increased upwards from the bottom surface of the groove; the step of carrying out plasma surface treatment on the closed groove twice is also included between the etching step and the oxidizing step, wherein the first plasma surface treatment uses inert gas as a working medium, and the second plasma surface treatment uses NF 3 And H is 2 At least one of them is used as a working medium.
2. An oxidation-limited VCSEL fabrication method according to claim 1, wherein after the etching step is completed, a first surface plasma treatment is performed in the same etching chamber.
3. The method of fabricating an oxidation-limited VCSEL of claim 1, wherein the second plasma surface treatment is performed with NF 3 And H is 2 As a working medium.
4. An oxidation-limited VCSEL fabrication method in accordance with claim 3, wherein NF 3 The volume ratio of the mixed gas is 10-30%.
5. The method of manufacturing an oxide-confined VCSEL according to claim 4 wherein the total flow rate of the mixed gas is 20-100 sccm, the pressure is 0.2-1 Pa, the power is 10-50W, and the surface treatment time is 1-5 minutes.
6. The method of fabricating an oxidation-limited VCSEL of claim 1, further comprising the step of depositing a dielectric layer on the surface of the epitaxial wafer after the oxidizing step.
7. An oxidation-limited VCSEL fabrication method according to claim 6, wherein the dielectric layer is a composite of one or more of the following materials: siO (SiO) 2 、Al 2 O 3 、TiO 2 、SiN x SiON; the thickness of the dielectric layer is 350-1200 and nm.
8. The method for manufacturing an oxidation-limited VCSEL of claim 1, wherein the first plasma surface treatment uses Ar gas as a working medium; the first plasma surface treatment is divided into two stages, and the technological parameters of the first stage are as follows: ar gas flow is 50-100 sccm, pressure is 0.1-0.5 Pa, power is 300-1000W, and surface treatment time is 1-10 min; the technological parameters of the second stage are as follows: ar gas flow is 10-50 sccm, pressure is 0.2-1 Pa, power is 30-200W, and surface treatment time is 0.5-5 min.
9. An oxidation limited VCSEL manufactured using a method according to any of claims 1-8.
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| CN202311310128.3A CN117374731A (en) | 2023-10-11 | 2023-10-11 | Method for manufacturing oxidation-limited VCSEL and oxidation-limited VCSEL |
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| CN202311310128.3A CN117374731A (en) | 2023-10-11 | 2023-10-11 | Method for manufacturing oxidation-limited VCSEL and oxidation-limited VCSEL |
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