CN117080864A - Vertical cavity surface emitting laser and preparation method thereof - Google Patents
Vertical cavity surface emitting laser and preparation method thereof Download PDFInfo
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- CN117080864A CN117080864A CN202311055576.3A CN202311055576A CN117080864A CN 117080864 A CN117080864 A CN 117080864A CN 202311055576 A CN202311055576 A CN 202311055576A CN 117080864 A CN117080864 A CN 117080864A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 164
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 31
- 230000003647 oxidation Effects 0.000 claims abstract description 29
- 238000009279 wet oxidation reaction Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 230000000670 limiting effect Effects 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000007789 gas Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Abstract
The invention discloses a preparation method of a vertical cavity surface emitting laser. The method comprises the following steps: etching the epitaxial layer to a first plane to form an active region platform protruding out of the first plane, and performing wet oxidation on the active region platform to form an oxidation limiting structure; the method further comprises the following steps between the two steps: preparing a first dielectric protection layer on a first plane, preparing a second dielectric protection layer on the side wall of the active region platform, and then performing heat treatment on the epitaxial layer; the thickness of the first dielectric protective layer ranges from [ H/3, H ]]H is the height from the first plane to the top surface of the active layer; the second medium protective layer has a tensile stress of 100-400 MPa and a thickness of 5-30 nm; the heat treatment temperature is 350-500 ℃, the heat treatment time is 10-60 min, and the heat treatment atmosphere is H 2 Or H 2 /N 2 And (3) mixing gas. The invention also discloses a vertical cavity surface emitting laser. The invention can effectively eliminate stress and accurately control oxidation parts and oxidation rate.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a preparation method of a Vertical-Cavity Surface-Emitting Laser (VCSEL for short).
Background
The vertical cavity surface emitting laser has higher optical power and can well control the transverse mode, so that the vertical cavity surface emitting laser has great application prospect in the fields of optical communication, gesture sensing sensors, printing, magnetic storage and the like. However, because the device structure has the defects of thin active area, short cavity length, small single-layer gain and the like, in order to improve the effective photon limiting capability, an oxidation limiting structure is mostly adopted at present. The oxide holes formed by the oxide confinement structure have a very good lateral confinement capability for the current injected into the active region, so that the lateral current is almost the same. Meanwhile, the oxidation hole structure can also transversely restrict the light emitted by the laser active region to a certain extent, so that the mode of the laser is reduced, and the laser can be well stabilized due to the mode reduction.
In the existing oxidation-limited VCSEL manufacturing process, an epitaxial layer (comprising a first DBR layer, an active layer and a second DBR layer which are sequentially arranged from top to bottom, wherein the part, close to the active layer, of the bottom of the first DBR layer is a layer to be oxidized with high aluminum content) is required to be etched to form an active region platform, the active region platform is usually etched to 1-10 pairs of second DBRs below the active layer, the bottom surface of the etched groove is defined as a first plane, and then the active region platform protrudes out of the first plane and comprises the first DBR layer, the active layer and part of the second DBR layer which are sequentially arranged from top to bottom; and then carrying out oxidation treatment from the side wall of the active region platform by adopting a wet oxidation process, wherein the outer edge of the layer to be oxidized with high aluminum content is oxidized, and the middle region is not oxidized, so that an oxidation limiting structure with an oxidation hole in the middle is formed.
Both of the above processes can cause the laser to have significant stress, which directly determines the reliability of the laser. The stress is caused by the following three points: 1. the volume shrinkage of the layer to be oxidized with high aluminum content after being oxidized into aluminum oxide causes stress concentration at the interface between the layers; the DBR layers on the upper side of the active layer are composed of Al with lower aluminum content x Ga 1-x As layers and GaAs layers are alternately formed, al with lower aluminum content in wet oxidation process x Ga 1-x The As layer is also inevitably partially oxidized, so that the problem of stress caused by the shrinkage of the oxidized volume is further aggravated; 2. in order to improve the performance of the active layer and the bandwidth of the laser, the active layer is in a certain amount of strain state, and the strain state potentialStresses must be induced from layer to layer. 3. The layer structure of the partial area is changed after the active area platform is etched and formed, and the stress is generated due to the change of the layer structure. The stresses caused by these three points affect the reliability of the laser, and how to avoid the adverse effects caused by these stresses is a continuing goal of those skilled in the art.
In addition, wet oxidation to form an oxidation-limited structure is a key point in the process of preparing an oxidation-limited VCSEL, and the aperture, shape, microstructure of a peripheral oxidized region, and the like of the formed oxidized hole may affect the performance, reliability, and the like of the final device. Oxidizing the layer to be oxidized with high aluminum content by wet oxidation process to form Al 2 O 3 、Ga 2 O 3 、As 2 O 3 These compounds have a complex reaction process, and thus have a high oxidation temperature, residual oxygen content in the oxidizing atmosphere, and H 2 /N 2 Mixture gas and H 2 Process conditions such as the ratio of O vapor) are strictly controlled so that the oxidation rate is moderate.
Epitaxial layers of alternating Al x Ga 1-x The As layer and the GaAs layer are formed, the side wall of the active region platform and the first plane surface are naturally oxidized to form under oxides, and a large number of surface composite center defects are formed by the under oxides, and are channels for laser leakage, so that the performance and reliability of the laser are affected; in the wet oxidation process, a large amount of under-oxides are formed on the side wall surface of the active region platform and the first plane surface, so that the generation of surface recombination center defects is further aggravated, the electric leakage of the laser is worsened, and the performance and reliability of the laser are finally affected.
Disclosure of Invention
The invention aims to solve the technical problems of overcoming the defects of the prior art and providing the preparation method of the vertical cavity surface emitting laser, which can effectively eliminate stress and accurately control the oxidation part and the oxidation rate at the same time, thereby improving the performance and the reliability of the prepared VCSEL.
The technical scheme adopted by the invention specifically solves the technical problems as follows:
a method of fabricating a vertical cavity surface emitting laser, comprising: etching the epitaxial layer to a first plane to form an active region platform protruding out of the first plane, and performing wet oxidation on the active region platform to form an oxidation limiting structure; the epitaxial layer comprises a first DBR layer, an active layer and a second DBR layer which are sequentially arranged from top to bottom, wherein the part, close to the active layer, of the bottom of the first DBR layer is a layer to be oxidized with high aluminum content; the active region platform comprises a first DBR layer, an active layer and a part of second DBR layer which are sequentially arranged from top to bottom; the method also comprises the following protection and heat treatment steps between the etching step and the oxidation step: preparing a first dielectric protection layer on a first plane, preparing a second dielectric protection layer on the side wall of the active region platform, and then performing heat treatment on the epitaxial layer; the thickness range of the first dielectric protective layer is [ H/3, H ]]H is the height from the first plane to the top surface of the active layer; the second dielectric protective layer has a tensile stress of 100-400 MPa and a thickness of 5-30 nm; the heat treatment temperature is 350-500 ℃, the heat treatment time is 10-60 min, and the heat treatment atmosphere is H 2 Or H 2 /N 2 And (3) mixing gas.
Preferably, the second dielectric protective layer is any one or more than two of the following materials: siN (SiN) x 、Al 2 O 3 、 TiO 2 。
Preferably, the first dielectric protection layer is any one or more than two of the following materials: siN (SiN) x 、SiON、TiO 2 、TaO 2 。
Preferably, the epitaxial layer is subjected to a plasma surface treatment prior to the protection and heat treatment steps.
Preferably, the first dielectric protection layer is prepared on the first plane using a PECVD or ALD process.
Preferably, the second dielectric protection layer is prepared on the active region mesa sidewalls using a PECVD or ALD process.
Preferably, the heat treatment is performed in the same chamber as the wet oxidation.
The following technical scheme can be obtained based on the same inventive concept:
a vertical cavity surface emitting laser prepared by using the preparation method of the vertical cavity surface emitting laser according to any one of the technical schemes.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
according to the method, before wet oxidation, a proper medium protection layer is respectively prepared on the first plane at the bottom of the active region platform and the surface of the side wall of the active region platform, and then the medium protection layer on the outer side of the layer to be oxidized is crushed to form a steam channel required by wet oxidation by combining a corresponding heat treatment process, so that the medium protection layer on the other parts is kept intact; on one hand, the method can effectively eliminate the stress generated by the previous working procedure, reduce the stress generated by the subsequent working procedure, and on the other hand, can precisely control the oxidation part and the oxidation reaction rate, thereby improving the performance and the reliability of the prepared VCSEL.
Drawings
FIG. 1 is a schematic diagram of a VCSEL according to an embodiment of the present invention; the reference numerals in the drawings have the following meanings: 1. a GaAs substrate; 2. a Buffer layer; 3. an N-type DBR; 4. an active layer; 5. an oxidation limiting layer; 6. a P-type DBR layer; 7. an N-type metal; 8. a P-type metal; 9. a first dielectric protective layer; 10. a second dielectric protective layer; 11. a second dielectric protective layer crushing zone;
fig. 2 to 17 are schematic views illustrating a process for manufacturing the vertical cavity surface emitting laser shown in fig. 1.
Description of the embodiments
Aiming at the defects of the prior art, the solution idea of the invention is to respectively prepare proper medium protection layers on the first plane at the bottom of the active region platform and the surface of the side wall of the active region platform before wet oxidation, and then combine the corresponding heat treatment process to ensure that the medium protection layers outside the layer to be oxidized are crushed to form a steam channel required by the wet oxidation and the medium protection layers at the other parts are kept intact; on one hand, the method can effectively eliminate the stress generated by the previous working procedure, reduce the stress generated by the subsequent working procedure, and on the other hand, can precisely control the oxidation part and the oxidation reaction rate, thereby improving the performance and the reliability of the prepared VCSEL.
The preparation method of the vertical cavity surface emitting laser provided by the invention comprises the following steps: etching the epitaxial layer to a first plane to form an active region platform protruding out of the first plane, and performing wet oxidation on the active region platform to form an oxidation limiting structure; the epitaxial layer comprises a first DBR layer, an active layer and a second DBR layer which are sequentially arranged from top to bottom, wherein the part, close to the active layer, of the bottom of the first DBR layer is a layer to be oxidized with high aluminum content; the active region platform comprises a first DBR layer, an active layer and a part of second DBR layer which are sequentially arranged from top to bottom; the method also comprises the following protection and heat treatment steps between the etching step and the oxidation step: preparing a first dielectric protection layer on a first plane, preparing a second dielectric protection layer on the side wall of the active region platform, and then performing heat treatment on the epitaxial layer; the thickness range of the first dielectric protective layer is [ H/3, H ]]H is the height from the first plane to the top surface of the active layer; the second dielectric protective layer has a tensile stress of 100-400 MPa and a thickness of 5-30 nm; the heat treatment temperature is 350-500 ℃, the heat treatment time is 10-60 min, and the heat treatment atmosphere is H 2 Or H 2 /N 2 And (3) mixing gas.
Preferably, the second dielectric protective layer is any one or more than two of the following materials: siN (SiN) x 、Al 2 O 3 、 TiO 2 。
Preferably, the first dielectric protection layer is any one or more than two of the following materials: siN (SiN) x 、SiON、TiO 2 、TaO 2 。
Epitaxial layers of alternating Al x Ga 1-x The As layer and the GaAs layer are formed, the side wall of the active region platform and the first plane surface are naturally oxidized to form under oxides, and a large number of surface composite center defects are formed by the under oxides, and are channels for laser leakage, so that the performance and reliability of the laser are affected; the surface of the side wall of the active region platform and the surface of the first plane form a large amount of under-oxides in the wet oxidation process, so that the generation of surface recombination center defects is further aggravated, and the generation of bad spots is further aggravatedLeakage of the laser is simplified, and performance and reliability of the laser are finally affected.
To solve this problem, the epitaxial layer is preferably subjected to a plasma surface treatment prior to the protection and heat treatment steps.
By adopting the technical scheme, the side wall of the active platform and the first plane are treated by plasma, under-oxide formed by natural oxidation is reduced, and meanwhile, most of the area of the surface of the side wall of the active platform and the first plane are covered by the dielectric protection layer, so that the area covered by the dielectric protection layer in the wet oxidation process is not oxidized, namely the electric leakage center is not formed.
Preferably, the first dielectric protection layer is prepared on the first plane using a PECVD or ALD process.
Preferably, the second dielectric protection layer is prepared on the active region mesa sidewalls using a PECVD or ALD process.
Preferably, the heat treatment is performed in the same chamber as the wet oxidation.
For the convenience of public understanding, the following detailed description of the technical solution of the present invention will be given with reference to a specific embodiment in conjunction with the accompanying drawings:
FIG. 1 shows an oxidation-limited VCSEL prepared by the method of the present invention, which comprises a GaAs substrate 1, a Buffer layer 2, an N-type DBR layer 3, an active layer 4, an oxidation-limited layer 5, a P-type DBR layer 6, an N-type metal 7, and a P-type metal 8; the active region platform protrudes out of the bottom surface of the trench formed in the etching step (the first plane is defined by the invention) and comprises a P-type DBR layer 6, an oxidation limiting layer 5, an active layer 4 and a part of N-type DBR layer 3 from top to bottom; as shown in fig. 1, unlike the conventional oxidation-limited VCSEL, a first dielectric protection layer 9 is provided on a first plane, a second dielectric protection layer 10 is provided on a surface of a side wall of an active region mesa, and a second dielectric protection layer breaking region 11 exists in the second dielectric protection layer 10 corresponding to a region outside the oxidation-limited layer.
The first dielectric protection layer 9 and the second dielectric protection layer 10 are prepared after the etching step and before the oxidation step; the high-aluminum layer of the active area platform and the protective medium in the area between the active layers are crushed under the combined action of the micro deformation and the volume shrinkage of the protective medium in the area between the high-aluminum layer of the active area platform and the active layer in the subsequent heat treatment process, so that a second medium protective layer crushing area 11 is formed and is used as a window for entering water vapor required in the wet oxidation process; the medium in other areas of the side wall of the active region platform is not crushed due to the fact that the medium is only contracted by the self volume, and is more compact. In this way, the first dielectric protection layer 9 and the other part of the second dielectric protection layer 10 respectively protect the first plane and the P-type DBR with low aluminum content in the wet oxidation process, so that the P-type DBR is not oxidized, and stress caused by oxidation shrinkage is not generated, and the existence of the broken area 11 of the second dielectric protection layer enables the layer to be oxidized with high aluminum content on the upper side of the active layer to be oxidized to form an oxidation limiting layer, and meanwhile, the oxidation rate is not as severe as that of the whole layer exposed to the wet oxidation atmosphere, so that the precise control of the oxidation hole parameters is facilitated.
To achieve the above result, the first dielectric protective layer should satisfy a thickness in the range of [ H/3, H ]]H is the height from the first plane to the top surface of the active layer, and of course, the thickness of the first dielectric protection layer is as close as possible to H in ideal cases, namely, the side surface of the active layer can be just covered, but the difficulty is too high in the actual process control process; the second dielectric protective layer should have a tensile stress of 100-400 MPa and a thickness of 5-30 nm; the heat treatment temperature is 350-500 ℃, the heat treatment time is 10-60 min, and the heat treatment atmosphere is H 2 Or H 2 /N 2 And (3) mixing gas.
The detailed preparation process of the oxidation limiting VCSEL comprises the following steps:
step 1, coating photoresist on the surface of an epitaxial wafer (comprising a GaAs substrate, a Buffer layer, an N-type DBR layer, an active layer, a layer to be oxidized with high aluminum content and a P-type DBR layer from bottom to top) shown in fig. 2, wherein the thickness of the photoresist is 5-15 um; exposing and developing the photoresist to obtain a photoresist mask of an active region platform, see fig. 3;
step 2, etching the epitaxial wafer obtained in the step 1 by adopting an ICP dry etching process, wherein etching gas is Cl 2 /BCl 3 Or Cl 2 /SiCl 4 Etching to 1-10 pairs of N-DBRs under the active layer to expose the layer to be oxidized with high aluminum content, see FIG. 4; the photoresist is then removed, resulting in a P Mesa structure (i.e., active region Mesa), see fig. 5;
step 3, performing plasma surface treatment on the epitaxial wafer obtained in the step 2 to remove the oxide on the first surface and the side wall of the active region platform; the gas forming the plasma in this embodiment is H 2 、NH 3 The plasma function rate is 50-1000W, the surface treatment pressure is 0.1-10 Pa, and the surface treatment time is 30-600 s, see fig. 6;
step 4, depositing a dielectric protection layer on the surface of the epitaxial wafer obtained in the step 3, wherein the dielectric material is SiN x Film thickness 400-1000 a nm a deposited by PECVD or ALD, see figure 7;
step 5, removing the dielectric film on the side wall of the active region platform from the epitaxial wafer obtained in the step 4, and removing the dielectric film on the side wall of the active region platform by adopting a dry method or a wet method corrosion mode, wherein the wet method process can be BOE corrosion, and the dry method can be CF 4 Or CF (compact flash) 4 +CHF 3 Etching with mixed gas, dry etching pressure is 10-100 Pa, and after etching, the side wall of the active region platform is free of a dielectric protection layer, see FIG. 8;
step 6, coating photoresist on the surface of the epitaxial wafer finished in the step 5, wherein the thickness of the photoresist is 2-10 um; exposing and developing the photoresist so that only the first plane is left with the photoresist and the rest area is free of the photoresist, see fig. 9;
step 7, removing the dielectric film of the area, except the first plane, on the epitaxial wafer obtained in the step 6, wherein the dielectric film on the side wall of the active platform can be removed by adopting a dry method or a wet method corrosion mode, the wet method process can be BOE corrosion, and the dry method can be CF 4 Or CF (compact flash) 4 +CHF 3 Etching with mixed gas, dry etching pressure is 0.1-1 Pa, and after etching, only a first plane is left with a dielectric protection layer, namely a first dielectric protection layer, and other areas are free of dielectric protection layers, see FIG. 10; after etching, photoresist removing treatment is carried out to remove the first dielectric protection layerThe photoresist above, see fig. 11;
step 8, depositing a second dielectric protection layer on the epitaxial wafer obtained in the step 7, wherein the tensile stress of the second dielectric protection layer is 100-400 MPa, and the film thickness is 5-30 nm, see FIG. 12; the dielectric material used in this embodiment is SiN x Deposited by PECVD or ALD processes; the thickness of the second dielectric protection layer is extremely thin, and a dielectric layer is further prepared on the surface of the device to realize the protection of the device, so that the second dielectric protection layer deposited on the top of the active region platform and the first dielectric protection layer simultaneously does not need to be removed, and the generation of a broken region of the second dielectric protection layer is not influenced;
step 9, performing heat treatment on the epitaxial wafer obtained in the step 8, wherein the heat treatment is performed in a wet oxidation chamber, the heat treatment temperature is 350-500 ℃, the heat treatment time is 10-60 min, and the heat treatment atmosphere is H 2 Or H 2 /N 2 A mixed gas; after the heat treatment is finished, the second dielectric protection layer in the area range between the high aluminum layer on the side wall of the active region platform and the active layer is broken, so that a wet oxidation water vapor inlet window is formed, and the wet oxidation water vapor inlet window is shown in fig. 13;
step 10, carrying out wet oxidation on the active region platform obtained in the step 9, wherein the wet oxidation temperature is consistent with the heat treatment temperature in the step 9; the wet oxidation process oxidizes Al in the high aluminum content layer to be oxidized to obtain an active region platform with an oxidation-limited structure, see fig. 14;
step 11, depositing a dielectric layer on the epitaxial wafer obtained in the step 10, wherein the thickness of the dielectric layer is 50-500 and nm, and the material is SiO 2 、Al 2 O 3 、TiO 2 、SiN x Single-layer or multi-material composite films such as SiON, the coating process is PECVD or ALD, see FIG. 15;
step 12, coating photoresist on the surface of the epitaxial wafer obtained in the step 11, wherein the thickness of the photoresist is 1-5um; exposing and developing the photoresist, only enabling the metal Via hole on the dielectric layer to have no photoresist, and covering the rest area by the photoresist; etching to remove the dielectric layer, and then removing the photoresist to form a metal Via hole, see FIG. 16;
and step 13, depositing metal, au, pt, ag, al and the like on the epitaxial wafer obtained in the step 12 to form N-type metal and P-type metal, see fig. 17.
Claims (8)
1. A method of fabricating a vertical cavity surface emitting laser, comprising: etching the epitaxial layer to a first plane to form an active region platform protruding out of the first plane, and performing wet oxidation on the active region platform to form an oxidation limiting structure; the epitaxial layer comprises a first DBR layer, an active layer and a second DBR layer which are sequentially arranged from top to bottom, wherein the part, close to the active layer, of the bottom of the first DBR layer is a layer to be oxidized with high aluminum content; the active region platform comprises a first DBR layer, an active layer and a part of second DBR layer which are sequentially arranged from top to bottom; the method is characterized by further comprising the following protection and heat treatment steps between the etching step and the oxidation step: preparing a first dielectric protection layer on a first plane, preparing a second dielectric protection layer on the side wall of the active region platform, and then performing heat treatment on the epitaxial layer; the thickness range of the first dielectric protective layer is [ H/3, H ]]H is the height from the first plane to the top surface of the active layer; the second dielectric protective layer has a tensile stress of 100-400 MPa and a thickness of 5-30 nm; the heat treatment temperature is 350-500 ℃, the heat treatment time is 10-60 min, and the heat treatment atmosphere is H 2 Or H 2 /N 2 And (3) mixing gas.
2. The method of manufacturing a vcl as claimed in claim 1, wherein the second dielectric protective layer is a composite of any one or more of the following materials: siN (SiN) x 、Al 2 O 3 、 TiO 2 。
3. The method of manufacturing a vcl as claimed in claim 1, wherein the first dielectric protective layer is a composite of any one or more of the following materials: siN (SiN) x 、SiON、TiO 2 、TaO 2 。
4. A method of fabricating a vcsels as defined in claim 1, wherein the epitaxial layer is subjected to a plasma surface treatment prior to the protecting and heat treating steps.
5. The method of claim 1, wherein the first dielectric protection layer is formed on the first plane using a PECVD or ALD process.
6. The method of claim 1, wherein the second dielectric protection layer is formed on the active region mesa sidewall using a PECVD or ALD process.
7. A method of fabricating a vertical cavity surface emitting laser according to claim 1, wherein said heat treatment is performed in the same chamber as wet oxidation.
8. A vertical cavity surface emitting laser prepared by the method of any one of claims 1 to 7.
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| CN202311055576.3A CN117080864A (en) | 2023-08-22 | 2023-08-22 | Vertical cavity surface emitting laser and preparation method thereof |
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