CN117374717A - Narrow linewidth laser without temperature drift - Google Patents
Narrow linewidth laser without temperature drift Download PDFInfo
- Publication number
- CN117374717A CN117374717A CN202311539388.8A CN202311539388A CN117374717A CN 117374717 A CN117374717 A CN 117374717A CN 202311539388 A CN202311539388 A CN 202311539388A CN 117374717 A CN117374717 A CN 117374717A
- Authority
- CN
- China
- Prior art keywords
- gain chip
- optical
- etalon
- temperature
- narrow linewidth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000007423 decrease Effects 0.000 claims abstract description 3
- 230000003287 optical effect Effects 0.000 claims description 38
- 239000013307 optical fiber Substances 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- 239000005304 optical glass Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1317—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention discloses a narrow linewidth laser without temperature drift, which comprises a reflective semiconductor gain chip, an metalon Etalon, a filter, a temperature compensator and a light reflector, wherein the reflective semiconductor gain chip is arranged on the wafer; the two sides of the reflection type semiconductor gain chip are respectively plated with a high reflection film and an antireflection film; the two sides of the metalon Etalon are respectively plated with an anti-reflection film, and the anti-reflection films are arranged on the side of the reflection type semiconductor gain chip plated with the anti-reflection films; the filter and the Etalon are matched with each other to realize mode selection, and the filter and the Etalon are arranged on one side of the Etalon, which is far away from the gain chip; the temperature compensator comprises a negative thermo-optical coefficient material, the refractive index of which decreases with the temperature rise, and the temperature compensator is arranged on one side of the filter far away from the gain chip; the light reflector is used for reflecting part of light and is arranged on one side of the temperature compensator away from the gain chip.
Description
Technical Field
The invention relates to a narrow linewidth laser, belongs to the technical field of optical communication, and particularly relates to a temperature drift-free narrow linewidth laser.
Background
The narrow linewidth semiconductor laser has the characteristics of narrow linewidth, low noise, high stability, high coherence and good dynamic single mode, becomes a core light source device in the fields of long-distance space optical communication, high-sensitivity optical sensing, energy detection and the like, and has extremely wide application in the fields of high-precision coherent laser radar, precise optical fiber sensors, inter-satellite communication and optical fiber coherent communication. Silicon-based materials in the narrow linewidth laser comprise silicon, silicon nitride and other positive thermo-optical coefficient materials, the refractive index of the silicon-based materials can be increased along with the temperature rise, so that the resonant wavelength of the silicon-based resonant cavity can drift along with the temperature change, and finally the emergent wavelength of the laser is influenced.
Due to the existence of temperature drift, the narrow linewidth laser needs to be subjected to temperature control in practical application, and an additional temperature control device is added, so that the power consumption of the laser is increased, the integration level of the laser is reduced, and the cost of the laser is increased.
Disclosure of Invention
The invention provides a narrow linewidth laser without temperature drift, which solves the problems existing in the prior art.
One of the core technologies of the invention is to adopt a temperature compensator coupled into an optical path, the temperature compensator comprises a negative thermo-optical coefficient material, the optical path of a laser passes through the negative thermo-optical coefficient material, when the temperature changes, the temperature compensator can compensate the effective cavity length generated by the silicon-based material along with the temperature change, and an additional regulating device is not needed to be additionally arranged, so that the power consumption of a narrow linewidth laser is reduced, the integration level is increased and the preparation cost is reduced.
The technical problems of the invention are mainly solved by the following technical proposal:
a temperature drift free narrow linewidth laser comprising:
a reflective semiconductor gain chip, an Etalon, a filter, a temperature compensator, and a light reflector;
the two sides of the reflective semiconductor gain chip are respectively plated with a high-reflection film and an anti-reflection film;
the two sides of the metalon Etalon are respectively plated with an anti-reflection film, and the anti-reflection films are arranged on the side of the reflection type semiconductor gain chip plated with the anti-reflection films;
the filter and the Etalon are matched with each other to realize mode selection, and the filter and the Etalon are arranged on one side of the Etalon, which is far away from the gain chip;
the temperature compensator comprises a negative thermo-optical coefficient material, the refractive index of which decreases with the temperature rise, and the temperature compensator is arranged on one side of the filter far away from the gain chip;
the light reflector is used for reflecting part of light and is arranged on one side of the temperature compensator away from the gain chip.
Further, the laser light path penetrates through the negative thermo-optic coefficient material of the temperature compensator.
Further, the negative thermo-optic coefficient material of the temperature compensator is an optical glass with a negative thermo-optic coefficient.
Further, the temperature compensator is obliquely arranged in the light path.
Further, the narrow linewidth laser without temperature drift further comprises an optical lens, which is positioned between the gain chip and the metalon Etalon and is used for coupling the optical paths of the gain chip and the metalon Etalon.
Further, the narrow linewidth laser without temperature drift further comprises an optical isolator, an optical lens and an output optical fiber; the optical isolator is positioned at one side of the light reflector away from the gain chip and is used for inhibiting reflected light in the output optical fiber; the optical lens is positioned between the optical isolator and the output optical fiber and is used for coupling the optical paths of the optical isolator and the output optical fiber; the output optical fiber is used for outputting laser emitted by the laser.
Compared with the prior art, the invention has the beneficial effects that:
the temperature compensator is coupled into the light path, the temperature compensator comprises a negative thermo-optical coefficient material, the light path of the laser passes through the negative thermo-optical coefficient material, when the temperature changes, the temperature compensator can compensate the effective cavity length generated by the silicon-based material along with the temperature change, and an additional regulating device is not needed to be additionally arranged, so that the power consumption of the narrow-line-width laser is reduced, the integration level is increased, and the preparation cost is reduced.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
description of the drawings: 1. a reflective semiconductor gain chip; 2. an optical lens; 3. an Etalon; 4. A filter; 5. a temperature compensator; 6. a light reflector; 7. an optical isolator; 8. an optical lens; 9. and outputting an optical fiber.
Detailed Description
The invention is further described in connection with the following detailed description, in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "provided," "connected," and the like are to be construed broadly, and may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, a narrow linewidth laser without temperature drift in an example of the present invention includes a reflective semiconductor gain chip 1, an optical lens 2, an metalon Etalon 3, a filter 4, a temperature compensator 5, an optical transmitter 6, an optical isolator 7, an optical lens 8, and an output optical fiber 9. The reflective semiconductor gain chip 1 is used for providing gain, and two end faces of the reflective semiconductor gain chip are respectively plated with a high-reflection film and an anti-reflection film. An optical lens 2 is disposed between the gain chip 1 and the metalon Etalon 3 to assist in focusing the light emitted by the gain chip 1 into the metalon Etalon 3. The Etalon 3 and the filter 4 are sequentially arranged on the right side of the reflective semiconductor gain chip 1, and the Etalon 3 and the filter 4 cooperate to filter out light with a target wavelength and inhibit light with other wavebands. The temperature compensator 5 is arranged on the right side of the filter 4, the temperature compensator 5 is obliquely arranged in the light path, the interference of reflected light is reduced, the temperature compensator 5 comprises glass with negative thermo-optical coefficient, the light path of the laser penetrates through the glass, and when the temperature changes, the temperature compensator 5 can compensate the effective cavity length generated by the silicon-based material along with the temperature change. The light reflector 6 is positioned on the right side of the temperature compensator 5, has a reflectivity of 10%, transmits light rays, and reflects part of the light back to the gain chip, and the light reflector 6, the gain chip 1, the optical lens 2, the metalon Etalon 3, the filter 4 and the temperature compensator 5 form an optical cavity together. The optical isolator 7 is located on the right side of the optical reflector 6, and is used for suppressing reflected light of the optical fiber and reducing interference. The optical lens 8 is used to assist in coupling the light paths. The output optical fiber 9 is for outputting laser light.
Because the silicon-based material and the negative thermo-optical coefficient glass have opposite thermo-optical effect, when the temperature changes, the equivalent cavity length change caused by the silicon-based material can be counteracted by the change of the equivalent cavity length of the negative thermo-optical coefficient glass, and because the change is the characteristic of the negative thermo-optical coefficient material, an additional regulating device is not needed to be additionally arranged, so that the power consumption of the narrow-linewidth laser is reduced, the integration level is increased and the preparation cost is reduced.
The foregoing is merely exemplary embodiments of the present invention, and specific structures and features that are well known in the art are not described in detail herein. It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (6)
1. A temperature drift-free narrow linewidth laser, comprising:
a reflective semiconductor gain chip (1), an Etalon (3), a filter (4), a temperature compensator (5) and a light reflector (6);
the two sides of the reflective semiconductor gain chip (1) are respectively plated with a high-reflection film and an anti-reflection film;
the two sides of the metalon Etalon (3) are respectively plated with an anti-reflection film, and the anti-reflection films are arranged on the side of the reflection type semiconductor gain chip (1) plated with the anti-reflection films;
the filter (4) is matched with the metalon Etalon (3) to realize mode selection, and is arranged on one side of the metalon Etalon (3) far away from the gain chip (1);
the temperature compensator (5) comprises a negative thermo-optic coefficient material, the refractive index of which decreases with the temperature rise, and is arranged on one side of the filter (4) away from the gain chip (1);
the light reflector (6) is used for reflecting part of light and is arranged on one side of the temperature compensator (5) away from the gain chip (1).
2. The temperature drift-free narrow linewidth laser of claim 1 wherein the laser optical path is through the negative thermo-optic coefficient material of the temperature compensator (5).
3. A narrow linewidth laser without temperature drift according to claim 2, characterized in that the negative thermo-optical coefficient material of the temperature compensator (5) is an optical glass with a negative thermo-optical coefficient.
4. The temperature drift-free narrow linewidth laser according to claim 1, characterized in that the temperature compensator (5) is arranged obliquely in the optical path.
5. The temperature drift-free narrow linewidth laser of claim 1 further comprising: an optical lens (2) located between the gain chip (1) and the Etalon (3) for coupling the optical paths of the gain chip (1) and the Etalon (3).
6. The temperature drift-free narrow linewidth laser of claim 1 further comprising: an optical isolator (7), an optical lens (8) and an output optical fiber (9); the optical isolator (7) is positioned on one side of the light reflector (6) away from the gain chip (1) and is used for inhibiting reflected light in the output optical fiber (7); the optical lens (8) is positioned between the optical isolator (7) and the output optical fiber (9) and is used for coupling the optical paths of the optical isolator (7) and the output optical fiber (9); the output optical fiber (9) is used for outputting laser emitted by a laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311539388.8A CN117374717A (en) | 2023-11-17 | 2023-11-17 | Narrow linewidth laser without temperature drift |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311539388.8A CN117374717A (en) | 2023-11-17 | 2023-11-17 | Narrow linewidth laser without temperature drift |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117374717A true CN117374717A (en) | 2024-01-09 |
Family
ID=89406012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311539388.8A Pending CN117374717A (en) | 2023-11-17 | 2023-11-17 | Narrow linewidth laser without temperature drift |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117374717A (en) |
-
2023
- 2023-11-17 CN CN202311539388.8A patent/CN117374717A/en active Pending
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