CN214589684U - External cavity semiconductor laser with controllable mode field distribution - Google Patents
External cavity semiconductor laser with controllable mode field distribution Download PDFInfo
- Publication number
- CN214589684U CN214589684U CN202121082642.2U CN202121082642U CN214589684U CN 214589684 U CN214589684 U CN 214589684U CN 202121082642 U CN202121082642 U CN 202121082642U CN 214589684 U CN214589684 U CN 214589684U
- Authority
- CN
- China
- Prior art keywords
- mode field
- laser
- fourier transform
- gain chip
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model discloses a controllable exocoel semiconductor laser of mode field distribution, including semiconductor gain chip, one side of semiconductor gain chip is provided with the Fourier transform group of lens, and one side that semiconductor gain chip was kept away from to the Fourier transform group of lens is provided with space mode field selector, and one side that Fourier transform group of lens was kept away from to space mode field selector is provided with the conjugate speculum, the utility model discloses the beneficial effect who reaches is: the utility model discloses for traditional single mode semiconductor laser, realized higher quantum efficiency, improved output luminous power to realized lower manufacturing cost, changed the volume production, realized controllable mode field output simultaneously, improved light beam quality, can realize arbitrary controllable laser instrument mode field output with the low-cost ground, at laser illumination, fields such as laser communication, laser sensing have important value.
Description
Technical Field
The utility model belongs to the laser instrument field specifically is a controllable exocoel semiconductor laser of mode field distribution.
Background
In the existing life, the laser plays an important role in the fields of industrial processing, communication, sensing, medical treatment and the like, and particularly, the semiconductor laser benefits from the advantages of high integration level and low cost, so that the market demand is more and more large. For a laser, mode field distribution is an important characteristic, and has important significance for downstream applications such as uniform illumination, fiber coupling, long-distance collimation and the like, generally speaking, a multimode laser has higher power and quantum efficiency, but the beam quality is worse, while a single-mode laser has lower power and quantum efficiency, but the beam quality is better, most laser applications require that the mode field distribution of the laser is a fundamental mode to realize better beam quality output, a traditional method is to make a waveguide only suitable for single-mode transmission in a resonant cavity of the laser, such as a ridge waveguide and a buried heterojunction waveguide commonly used in a semiconductor laser, but because the mode volume of the fundamental mode is smaller, gain in a semiconductor chip cannot be fully utilized, so that the semiconductor laser output by the fundamental mode has low luminous efficiency and low output power, and meanwhile, partial illumination requirements and high-end scientific research applications, requiring lasers to operate with special high-order mode field distributions results in extremely high waveguide design and processing difficulties for semiconductor lasers.
The utility model has the following contents:
the present invention is directed to provide an external cavity semiconductor laser with controllable mode field distribution for solving the above problems, and solves the problems mentioned in the background art.
In order to solve the above problem, the utility model provides a technical scheme:
the external cavity semiconductor laser with the mode field distribution controllable comprises a semiconductor gain chip, wherein a Fourier transform lens group is arranged on one side of the semiconductor gain chip, a spatial mode field selector is arranged on one side, away from the semiconductor gain chip, of the Fourier transform lens group, and a conjugate reflector is arranged on one side, away from the Fourier transform lens group, of the spatial mode field selector.
Preferably, the semiconductor gain chip is formed by an FP chip of a wide strip waveguide.
Preferably, an antireflection film is plated at one end of the semiconductor gain chip close to the Fourier transform mirror group.
Preferably, one end of the semiconductor gain chip, which is far away from the Fourier transform mirror group, is plated with a reflecting film.
Preferably, the spatial mode field selector is made of glass subjected to etching treatment or glass coated with a conductive glass film.
The utility model discloses the beneficial effect who reaches is: the utility model discloses for traditional single mode semiconductor laser, realized higher quantum efficiency, improved output luminous power to realized lower manufacturing cost, changed the volume production, realized controllable mode field output simultaneously, improved light beam quality, can realize arbitrary controllable laser instrument mode field output with the low-cost ground, at laser illumination, fields such as laser communication, laser sensing have important value.
Description of the drawings:
the accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic view of the overall structure of the present invention.
In the figure: 1. a semiconductor gain chip; 2. a Fourier transform lens group; 3. a spatial mode field selector; 4. a conjugate mirror.
The specific implementation mode is as follows:
the preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are presented herein only to illustrate and explain the present invention, and not to limit the present invention. Example (b):
as shown in fig. 1, the present invention provides an external cavity semiconductor laser with controllable mode field distribution, which includes a semiconductor gain chip 1, wherein the semiconductor gain chip 1 is used for providing optical gain capability for the laser; a Fourier transform mirror group 2 is arranged on one side of the semiconductor gain chip 1, and the Fourier transform mirror group 2 is used for carrying out spatial Fourier transform on light subjected to gain by the semiconductor gain chip 1; a spatial mode field selector 3 is arranged on one side of the Fourier transform lens group 2 away from the semiconductor gain chip 1, and the spatial mode field selector 3 is used for filtering the light field after Fourier transform; and a conjugate reflector 4 is arranged on one side of the spatial mode field selector 3, which is far away from the Fourier transform mirror group 2, and the conjugate reflector 4 is used for performing original path reflection on an incident light field.
Further, the semiconductor gain chip 1 is composed of a wide strip waveguide FP chip, so that the output power of the laser is higher, the gain is more fully utilized, and the quantum efficiency is improved.
Furthermore, an antireflection film is plated at one end of the semiconductor gain chip 1 close to the Fourier transform lens group 2, so that optical gain capability can be better provided for the laser.
Furthermore, a reflecting film is plated at one end of the semiconductor gain chip 1, which is far away from the Fourier transform lens group 2, so that the use effect of the semiconductor gain chip 1 is better increased.
Furthermore, the spatial mode field selector 3 is made of glass subjected to etching treatment or glass coated with a conductive glass film on the surface, so that the spatial mode field selector 3 is conveniently formed.
Specifically, the method comprises the following steps: the device is arranged at a specified position, then light passes through a semiconductor gain chip 1, the semiconductor gain chip 1 is composed of an FP chip of a wide strip waveguide, one end of the FP chip is plated with a normal medium-low reflectivity film, the other end of the FP chip is plated with an anti-reflection film with high transmittance, optical gain capability is provided for a laser, the light which is gained by the semiconductor gain chip 1 is subjected to spatial Fourier transform by a Fourier transform mirror group 2, a mode field which is transformed is subjected to filtering processing by a spatial mode field selector 3, so that a corresponding laser output mode field is constructed, the light field which is subjected to mode selection is reflected by a conjugate reflector 4, the reflected light field returns to the semiconductor gain chip 1 in the original way, oscillation in a resonant cavity is completed, and finally the light is output from the left side of the semiconductor gain chip 1, and the output power of the laser is higher by arranging the semiconductor gain chip 1, gain is utilized more fully, quantum efficiency is improved, controllable output of a light field is achieved by arranging the Fourier transform mirror group 2 and the spatial mode field selector 3, and convenience of production of an external cavity structure is improved by arranging the conjugate reflector 4.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second", "third", "fourth" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, whereby the features defined as "first", "second", "third", "fourth" may explicitly or implicitly include at least one such feature.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "screwed" and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through an intermediate medium, and may be connected through the inside of two elements or in an interaction relationship between two elements, unless otherwise specifically defined, and the specific meaning of the above terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The external cavity semiconductor laser with the controllable mode field distribution comprises a semiconductor gain chip (1) and is characterized in that a Fourier transform mirror group (2) is arranged on one side of the semiconductor gain chip (1), a space mode field selector (3) is arranged on one side, away from the semiconductor gain chip (1), of the Fourier transform mirror group (2), and a conjugate reflector (4) is arranged on one side, away from the Fourier transform mirror group (2), of the space mode field selector (3).
2. An external cavity semiconductor laser with controllable mode field distribution according to claim 1, wherein the semiconductor gain chip (1) is formed by a FP chip of a wide strip waveguide.
3. The external cavity semiconductor laser with controllable mode field distribution according to claim 1, wherein an antireflection coating is coated on one end of the semiconductor gain chip (1) close to the fourier transform mirror group (2).
4. The external cavity semiconductor laser with controllable mode field distribution according to claim 1, wherein the end of the semiconductor gain chip (1) away from the fourier transform mirror array (2) is coated with a reflective film.
5. An external cavity semiconductor laser with controllable mode field distribution according to claim 1, wherein the spatial mode field selector (3) is made of etched glass or glass coated with a conductive glass film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121082642.2U CN214589684U (en) | 2021-05-20 | 2021-05-20 | External cavity semiconductor laser with controllable mode field distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121082642.2U CN214589684U (en) | 2021-05-20 | 2021-05-20 | External cavity semiconductor laser with controllable mode field distribution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214589684U true CN214589684U (en) | 2021-11-02 |
Family
ID=78362600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121082642.2U Active CN214589684U (en) | 2021-05-20 | 2021-05-20 | External cavity semiconductor laser with controllable mode field distribution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214589684U (en) |
-
2021
- 2021-05-20 CN CN202121082642.2U patent/CN214589684U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN212160161U (en) | Optical module | |
| CN116131096A (en) | Wide tuning narrow linewidth semiconductor laser | |
| CN214589684U (en) | External cavity semiconductor laser with controllable mode field distribution | |
| CN116995526B (en) | Space coupling narrow linewidth semiconductor external cavity laser | |
| CN213816730U (en) | Optical fiber coupling device of laser | |
| CN213750403U (en) | Low-loss optical fiber collimator | |
| CN113193468B (en) | Semiconductor laser light source module based on planar waveguide type combiner and manufacturing method | |
| CN113178776A (en) | External cavity semiconductor laser with controllable mode field distribution | |
| CN112332206B (en) | Semiconductor optical fiber coupling single-mode laser based on fiber grating feedback | |
| CN115966995A (en) | Narrow linewidth external cavity laser device based on semi-confocal cavity | |
| CN116387967A (en) | Silicon-based integrated light source based on compound semiconductor laser | |
| CN207265414U (en) | Pumping formula face emitting semiconductor laser after small-sized | |
| CN214100214U (en) | Quick response fiber laser | |
| CN113488846B (en) | Sub-wavelength grating and vertical cavity surface emitting laser | |
| CN207518050U (en) | A kind of miniaturization blue laser of semiconductor laser direct frequency doubling | |
| CN117374717B (en) | Narrow linewidth laser without temperature drift | |
| CN112698447B (en) | Folded super-surface single-chip integrated vortex light beam multiplexing and demultiplexing device | |
| CN215989629U (en) | Narrow linewidth external cavity laser device based on semi-confocal cavity | |
| CN207602979U (en) | Littman structure light seeded wavelength semiconductor laser with tunable | |
| CN214044338U (en) | Fast-slow axis bidirectional focusing lens | |
| CN221407974U (en) | Resonant cavity and semiconductor laser chip | |
| CN1761110A (en) | Unstable laser cavity tunned by grating | |
| CN219677763U (en) | Bidirectional output different-wavelength optical fiber oscillator | |
| CN221884062U (en) | Single optical fiber acousto-optic modulator | |
| CN114759431B (en) | High-brightness external cavity semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 518000 unit 1501 1502 1503 1509 1510 1511 1512, block C, 15 / F, Baoneng Science Park, Qinghu village, Qinghu community, Longhua street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Micro source Photonics (Shenzhen) Technology Co.,Ltd. Address before: 518100 room 1608, floor 16, building 9, Baoneng Science Park, Qinghu village, Qinghu community, Longhua street, Longhua District, Shenzhen, Guangdong Patentee before: Micro source Photonics (Shenzhen) Technology Co.,Ltd. |