CN116131096A - Wide tuning narrow linewidth semiconductor laser - Google Patents

Wide tuning narrow linewidth semiconductor laser Download PDF

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Publication number
CN116131096A
CN116131096A CN202310126984.7A CN202310126984A CN116131096A CN 116131096 A CN116131096 A CN 116131096A CN 202310126984 A CN202310126984 A CN 202310126984A CN 116131096 A CN116131096 A CN 116131096A
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semiconductor laser
micro
module
tuning
optical
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Chinese (zh)
Inventor
张心研
刘宇
翟鲲鹏
陈少康
曹克奇
李明
祝宁华
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention provides a wide-tuning narrow-linewidth semiconductor laser, which is characterized by comprising the following components: an optical gain module for providing a tunable optical wave; the optical coupling module is used for coupling the light waves; and the external cavity resonance module is used for adjusting the coupled light waves to obtain narrow-linewidth output light. The invention provides a wide tuning narrow linewidth semiconductor laser which realizes a tuning function by utilizing Fano resonance between a micro-ring resonator and a U-shaped waveguide and vernier caliper effect between the micro-ring resonators, suppresses side modes in transmission spectrum of the micro-ring resonator by utilizing a Mach-Zehnder interferometer and improves wavelength selectivity. The line width of the output laser is narrowed, the frequency is stable, and the fast tuning of a wide spectrum range is realized.

Description

Wide tuning narrow linewidth semiconductor laser
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a wide-tuning narrow-linewidth semiconductor laser.
Background
The narrow-linewidth semiconductor laser has the advantages of high coherence, low phase frequency noise and high frequency stability, is widely applied in various fields, and is often used as a core device in the fields of ultra-high-speed optical communication, long-distance space laser communication, ultra-high-resolution laser radar, optical sensing and the like. With the development of high-quality factor optical resonant cavities, heterogeneous integrated chips and other technologies, narrow linewidth semiconductor lasers have undergone revolutionary development in recent decades, with linewidths being compressed to the kilohertz level, even to the sub-kilohertz level.
The current narrow linewidth semiconductor lasers are mostly distributed feedback and Bragg reflection monolithic integrated lasers, the linewidth of the lasers can be limited by factors such as resonant cavity length and loss, the manufacturing process is complex, and large-scale production and application are difficult. How to obtain a wide tuning range and a high stability of laser output while ensuring a narrow linewidth output remains a challenge at present.
Disclosure of Invention
First, the technical problem to be solved
The present invention provides a wide-tuning narrow-linewidth semiconductor laser for at least partially solving one of the above-mentioned technical problems.
(II) technical scheme
The invention provides a wide tuning narrow linewidth semiconductor laser, comprising: an optical gain module for providing a tunable optical wave; the optical coupling module is used for coupling the light waves; and the external cavity resonance module is used for adjusting the coupled light waves to obtain narrow linewidth output light.
Alternatively, the optical gain module employs a reflective semiconductor optical amplifier or gain chip.
Optionally, the optical coupling module includes: and the mode spot converter is positioned at the joint of the optical gain module and the external cavity resonance module and is used for coupling the light waves and transmitting the light waves into the external cavity resonance module.
Optionally, the external cavity resonance module includes: a U-shaped waveguide for generating Fano resonance for the light wave; the micro-ring resonator is used for improving the Q factor in the resonance mode and performing wavelength tuning; and the Mach-Zehnder interferometer is used for performing side mode suppression on the light waves output by the micro-ring resonator and outputting light waves with narrow linewidth.
Alternatively, the micro-ring resonator is comprised of a conventional micro-ring resonator and a grating resonator, wherein the grating resonator is comprised of an array of air holes.
Optionally, a thermode is placed at the microring of the microring resonator, the thermode being used to temperature adjust the microring resonator to change the waveguide refractive index.
Alternatively, the mode of waveguide coupling in the microring resonator is curved waveguide coupling.
Alternatively, the mach-zehnder interferometer may be a symmetrical mach-zehnder interferometer or an asymmetrical mach-zehnder interferometer.
Optionally, the external cavity resonance module further comprises: and the annular mirror is used for feeding back the light waves output by the Mach-Zehnder interferometer to the optical gain module and increasing the effective length of the outer cavity of the wide-tuning narrow-linewidth semiconductor laser.
Optionally, the external cavity resonator module is quasi-monolithic integrated with the semiconductor gain chip by the photonic chip.
(III) beneficial effects
The wide-tuning narrow-linewidth semiconductor laser provided by the invention at least comprises the following beneficial effects:
1. the wide-tuning narrow-linewidth semiconductor laser provided by the invention realizes a tuning function by utilizing Fano resonance between the micro-ring resonator and the U-shaped waveguide and vernier caliper effect between the micro-ring resonators, suppresses side modes in transmission spectrum of the micro-ring resonator by utilizing Mach-Zehnder interferometers, and improves wavelength selectivity. The line width of the output laser is narrowed, the frequency is stable, and the fast tuning of a wide spectrum range is realized.
2. The external cavity resonance module of the wide-tuning narrow-linewidth semiconductor laser provided by the invention is quasi-monolithically integrated by the photon chip and the semiconductor gain chip, has simple manufacturing process, and can achieve the effects of compact structure and high stability.
Drawings
FIG. 1 schematically illustrates a block diagram of a wide-tuning narrow-linewidth semiconductor laser in accordance with an embodiment of the present invention;
FIG. 2 schematically illustrates a block diagram of a micro-ring resonator in an embodiment of the invention;
FIG. 3 schematically illustrates a block diagram of a wide-tuning narrow-linewidth semiconductor laser in accordance with an embodiment of the present invention;
FIG. 4 schematically illustrates a block diagram of a wide-tuning narrow-linewidth semiconductor laser in accordance with an embodiment of the present invention;
fig. 5 schematically illustrates a block diagram of a wide-tuning narrow-linewidth semiconductor laser in an embodiment of the present invention.
Reference numerals illustrate:
1-a reflective semiconductor optical amplifier; a 2-mode spot-size converter; a 3-U-shaped waveguide; a 4-microring resonator; 5-a thermode; a 6-Mach-Zehnder interferometer; 7-ring mirror.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and include, for example, either permanently connected, removably connected, or integrally formed therewith; may be mechanically connected, may be electrically connected or may communicate with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present invention, it should be understood that the terms "longitudinal," "length," "circumferential," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the subsystem or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may cause confusion in the understanding of the invention. And the shape, size and position relation of each component in the figure do not reflect the actual size, proportion and actual position relation. In addition, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Similarly, in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. The description of the terms "one embodiment," "some embodiments," "example," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
The invention aims to provide a microwave frequency measuring system which realizes high-precision measurement of microwave frequency.
The invention will be described in further detail below in connection with specific embodiments and with reference to the accompanying drawings.
An aspect of an embodiment of the present invention provides a wide-tuning narrow-linewidth semiconductor laser, including: an optical gain module, an optical coupling module, and an external cavity resonance module.
Fig. 1 schematically illustrates a block diagram of a wide-tuning narrow-linewidth semiconductor laser in an embodiment of the present invention.
As shown in fig. 1, an optical gain module is used for providing a tunable optical wave, and a reflective semiconductor optical amplifier 1 or a gain chip is used, where the gain chip may be, for example, a high-power indium phosphide (InP) gain chip or a high-power indium gallium arsenide (InGaAsP) gain chip.
The optical coupling module is used for coupling the light waves provided by the optical gain module and is arranged at the joint of the optical gain module and the external cavity resonance module. The optical coupling module may be a mode spot converter 2, which is used to couple the light wave of the optical gain module and transmit the light wave into the external cavity resonator module. Besides, besides the mode spot-size converter provided by the embodiment of the invention, the optical wave coupling mode can be lens coupling, photon lead stitching and the like, and the related technical personnel can select according to actual situations, so that the invention is not limited.
And the external cavity resonance module is used for adjusting the coupled light waves to obtain narrow linewidth output light. In an embodiment of the present invention, the external cavity resonator module may include a U-shaped waveguide 3, a micro-ring resonator 4, and a mach-zehnder interferometer 6.
In the embodiment of the present invention, as shown in fig. 2, the micro-ring resonator 4 is a grating-assisted micro-ring resonator, and is composed of a conventional micro-ring resonator and a grating resonator composed of an air hole array. Wherein the microring resonator 4 may be a Silicon On Insulator (SOI) waveguide microring resonator or a high quality factor silicon nitride (Si) 3 N 4 ) Silicon dioxide (SiO) 2 ) The waveguide micro-ring resonator is formed.
In the embodiment of the invention, when the grating resonator meets the resonance condition L.n by utilizing the vernier effect g_eff ＝m g λ g When the laser beam is emitted, the lasing wavelength is generated; wherein lambda is g Is the resonant wavelength of the grating resonator, n g_eff Is the effective refractive index, m of the grating resonator g Is the resonant order of the cavity. According to the embodiment of the invention, the thermal electrode 5 is arranged at the micro-ring of the micro-ring resonator 4, the micro-ring resonator 4 is subjected to temperature adjustment by utilizing the thermal electrode, and the refractive index of the waveguide is changed by controlling the current of the thermal electrode 5, so that the wavelength adjustment is realized. The micro-ring resonator structure can effectively improve the Q factor of the grating resonator in the resonance mode, and enhance the interaction between light and substances so as to obtain narrower line width.
The mode of waveguide coupling in the micro-ring resonator 4 is curved waveguide coupling, which can effectively improve the coupling coefficient compared with straight waveguide coupling. In the embodiment of the invention, the angle of the curved waveguide is 90 degrees, the coupling gap is 130nm, the cross coupling efficiency is higher, and the width of the curved waveguide is 400nm. The radius of the annular waveguide is set to 4.5um, and the width of the annular waveguide is 450nm. The number of micro-ring resonators 4 may be one or two or more.
The mach-zehnder interferometer 6 may be a symmetrical mach-zehnder interferometer MZI and an asymmetrical mach-zehnder interferometer MZI. MZI minimizes the transmission at the nearest neighbor wavelength and the wavelength selectivity of the waveguide loop is higher. The symmetry of the MZI affects the linewidth of the external cavity laser.
The MZI of the Mach-Zehnder interferometer selected in the embodiment of the invention is a high asymmetric MZI, the transmissivity of the MZI is maximized at the resonance wavelength of the micro-ring resonator through the arrangement, and the wavelength selectivity is effectively improved through the suppression of the side modes in the transmission spectrum of the micro-ring resonator.
Fig. 4 schematically illustrates a block diagram of a wide-tuning narrow-linewidth semiconductor laser in an embodiment of the present invention. In fig. 4, taking a grating auxiliary micro-ring resonator and an asymmetric MZI as an example, by embedding the micro-ring resonator 4 in a U-shaped feedback coupling waveguide, fano resonance is generated between the U-shaped waveguide 3 and the micro-ring resonator 4, so as to form the Fano resonator with a grating auxiliary micro-ring structure, light waves are switched between preset wavelengths by heating the grating auxiliary micro-ring, and after the light passes through the grating auxiliary micro-ring and the asymmetric MZI, the output light achieves line width narrowing, broad tuning and frequency stabilization.
In the embodiment of the invention, the grating auxiliary micro-ring resonator is nested in the U-shaped feedback coupling waveguide, and the tuning function is realized based on Fano resonance between the micro-ring and the U-shaped waveguide and vernier caliper effect between the micro-rings. And a curved waveguide is adopted at the coupling position to increase the coupling efficiency between the micro-ring and the waveguide, so that the side mode in the transmission spectrum of the ring resonator is effectively restrained through the MZI, and the wavelength selectivity is effectively improved.
Furthermore, in the embodiment of the present application, the external cavity resonator module may further include a ring mirror 7, as shown in fig. 3 and 5. The annular mirror 7 is used for feeding back the light wave output by the Mach-Zehnder interferometer 6 to the optical gain module, increasing the effective length of the external cavity of the wide-tuning narrow-linewidth semiconductor laser, and obtaining narrower linewidth without increasing the waveguide size.
In an embodiment of the present invention, the external cavity resonator module includes waveguide structures formed on various substrates such as silicon (Si) based or indium phosphide (InP) based. The photonic chip and the semiconductor gain chip are integrated in a quasi-single-chip mode, and therefore the effects of compact structure and high stability can be achieved.
The wide-tuning narrow-linewidth semiconductor laser provided by the invention has the advantages of low noise, high side mode rejection ratio, high temperature stability, simple structure, low cost and the like. The gain chip and the external cavity chip are quasi-monolithic integrated, so that the gain chip and the external cavity chip have the characteristics of high reliability and low power consumption of a monolithic integrated structure.
While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (10)

1. A wide-tuning narrow linewidth semiconductor laser comprising:
an optical gain module for providing a tunable optical wave;
the optical coupling module is used for coupling the light waves;
and the external cavity resonance module is used for adjusting the coupled light waves to obtain narrow-linewidth output light.
2. The broad tuning narrow linewidth semiconductor laser of claim 1 wherein the optical gain module employs a reflective semiconductor optical amplifier (1) or gain chip.
3. The broad tuning narrow linewidth semiconductor laser of claim 1 wherein the optical coupling module comprises:
and the spot-size converter (2) is positioned at the joint of the optical gain module and the external cavity resonance module and is used for coupling the optical waves and transmitting the optical waves into the external cavity resonance module.
4. The broad tuning narrow linewidth semiconductor laser of claim 1 wherein the external cavity resonator module comprises:
-a U-shaped waveguide (3) for generating Fano resonance for said light waves;
the micro-ring resonator (4) is used for improving the Q factor in a resonance mode and performing wavelength tuning;
and the Mach-Zehnder interferometer (6) is used for performing side mode suppression on the light waves output by the micro-ring resonator (4) and outputting light waves with narrow linewidth.
5. The broad tuning narrow linewidth semiconductor laser of claim 4 wherein said micro-ring resonator (4) is comprised of a conventional micro-ring resonator and a grating resonator, wherein said grating resonator is comprised of an array of air holes.
6. The broad tuning narrow linewidth semiconductor laser of claim 4 wherein a thermode (5) is placed at the micro-ring of the micro-ring resonator (4), the thermode (5) being used to temperature-adjust the micro-ring resonator (4) to change the waveguide refractive index.
7. The broad-tuning narrow linewidth semiconductor laser of claim 4 wherein the waveguide coupling in the micro-ring resonator (4) is a curved waveguide coupling.
8. The wide-tuning narrow linewidth semiconductor laser of claim 4 wherein the mach-zehnder interferometer (6) may be a symmetrical mach-zehnder interferometer or an asymmetrical mach-zehnder interferometer.
9. The broad tuning narrow linewidth semiconductor laser of claim 1 wherein the external cavity resonator module further comprises:
and the annular mirror (7) is used for feeding back the light waves output by the Mach-Zehnder interferometer (6) to the optical gain module and increasing the effective length of the outer cavity of the wide-tuning narrow-linewidth semiconductor laser.
10. The broad tuning narrow linewidth semiconductor laser of claim 1 wherein the external cavity resonator module is quasi-monolithic integrated with a semiconductor gain chip by a photonic chip.
CN202310126984.7A 2023-02-06 2023-02-06 Wide tuning narrow linewidth semiconductor laser Pending CN116131096A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116908814A (en) * 2023-09-12 2023-10-20 深圳市速腾聚创科技有限公司 Laser radar and mobile device
CN117895322A (en) * 2024-03-18 2024-04-16 北京弘光向尚科技有限公司 Method for reducing mode-jump phenomenon of external cavity tunable laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116908814A (en) * 2023-09-12 2023-10-20 深圳市速腾聚创科技有限公司 Laser radar and mobile device
CN116908814B (en) * 2023-09-12 2024-01-16 深圳市速腾聚创科技有限公司 Laser radar and mobile device
CN117895322A (en) * 2024-03-18 2024-04-16 北京弘光向尚科技有限公司 Method for reducing mode-jump phenomenon of external cavity tunable laser

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