CN117373766A - Thin film resistor, laminated body and thin film resistor element - Google Patents
Thin film resistor, laminated body and thin film resistor element Download PDFInfo
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- CN117373766A CN117373766A CN202311468704.7A CN202311468704A CN117373766A CN 117373766 A CN117373766 A CN 117373766A CN 202311468704 A CN202311468704 A CN 202311468704A CN 117373766 A CN117373766 A CN 117373766A
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 238000007772 electroless plating Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 229910006091 NiCrSi Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 4
- 229920001225 polyester resin Polymers 0.000 claims description 4
- 239000004645 polyester resin Substances 0.000 claims description 4
- 229920005990 polystyrene resin Polymers 0.000 claims description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- 239000004640 Melamine resin Substances 0.000 claims description 3
- 229910018100 Ni-Sn Inorganic materials 0.000 claims description 3
- 229910018532 Ni—Sn Inorganic materials 0.000 claims description 3
- 229920000180 alkyd Polymers 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 229920006122 polyamide resin Polymers 0.000 claims description 3
- 229920013716 polyethylene resin Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 133
- 229910001120 nichrome Inorganic materials 0.000 description 26
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 25
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 12
- 229910052725 zinc Inorganic materials 0.000 description 12
- 239000011701 zinc Substances 0.000 description 12
- 238000005187 foaming Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910019819 Cr—Si Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The invention provides a thin film resistor, a laminated body and a thin film resistor element, wherein the thin film resistor comprises a first conductive layer and first resistor layers which are covered on one side or two side surfaces of the first conductive layer; the surface area of the first conductive layer close to the first resistor layer side is S1, the horizontal total area of crystal grains in the first conductive layer close to the first resistor layer side is S2, and the numerical ratio of S1 to S2 is in the range of: S1/S2 is more than or equal to 1.2 and less than or equal to 6.2. According to the invention, the thin film resistor with good sheet resistance uniformity is obtained by controlling the ratio of the surface area of the first conductive layer close to the first resistor layer side to the horizontal total area of the crystal grains in the first conductive layer close to the first resistor layer side, and the thin film resistor has good adhesion with the circuit board, so that the application of the circuit board is satisfied; meanwhile, the manufacturing cost of the thin film resistor is low and the production difficulty is low.
Description
Technical Field
The invention belongs to the technical field of thin film devices, and relates to a thin film resistor, in particular to a thin film resistor, a laminated body and a thin film resistor element.
Background
Chip electronic components are now widely used in electronic products. The chip resistor mainly comprises a thick film chip resistor and a thin film chip resistor, wherein the thin film chip resistor is a new generation chip resistor which has the fastest development, the widest application range and the best prospect in recent years, the main components of a resistance film layer are nichrome (CrNi) and tantalum nitride (TaN) and the like, the thickness of the film layer is tens of nanometers to hundreds of nanometers, the square resistance is high and precisely adjustable, and the chip resistor is an ideal product for replacing a low-precision thick film chip resistor and a traditional columnar lead resistor. However, the sheet resistance uniformity of the thin film resistor in the prior art is poor, and it is difficult to satisfy the application of the circuit board.
The sheet resistor in the prior art has certain defects, and has the technical problems of poor uniformity of sheet resistor, higher manufacturing cost, higher production difficulty, easy foaming in application and the like. Therefore, development and design of a novel thin film resistor, a laminated structure and a thin film resistor element are important.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a thin film resistor, a laminated body and a thin film resistor element, wherein the thin film resistor with good sheet resistance uniformity is obtained by controlling the ratio of the surface area of a first conductive layer close to a first resistor layer side to the horizontal total area of crystal grains in the first conductive layer close to the first resistor layer side, and the thin film resistor also has good adhesion with a circuit board; meanwhile, the application of the circuit board is satisfied.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a thin film resistor, where the thin film resistor includes a first conductive layer and a first resistive layer covering one or both surfaces of the first conductive layer;
the surface area of the first conductive layer close to the first resistor layer side is S1, the horizontal total area of crystal grains in the first conductive layer close to the first resistor layer side is S2, and the numerical ratio of S1 to S2 is in the range of: S1/S2 is more than or equal to 1.2 and less than or equal to 6.2.
In the invention, the surface area of the first conductive layer near the first resistance layer side and the grain size in the first conductive layer near the first resistance layer side are controlledThe thin film resistor with good sheet resistance uniformity is obtained, the control of the ratio between S1 and S2 is particularly important, the thin film resistor also has good adhesiveness with a circuit board, and the application requirement of the circuit board is met. Wherein the ratio of S1/S2 can be any one value or a range of any two values of 1.2, 1.3, 1.5, 1.6, 1.8, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, 5.0, 5.2, 5.8 and 6.2. For better sheet resistance uniformity, the ratio of S1/S2 is preferably 1.2.ltoreq.S1/S2.ltoreq.5.2. It should be noted that the total horizontal area of the grains is the sum of the horizontal areas of all grains in the first conductive layer corresponding to the surface area of the first conductive layer S1 detected under the instrument. For example, S1 is 77592-319021 μm 2 The corresponding S2 is 60990 μm 2 This is merely an example, as long as the S1/S2 ratio meets the requirements of the present invention within this scheme.
Preferably, the average diameter of the crystal grains in the first conductive layer is D, and the numerical ratio of S1 to D ranges from: 3286.ltoreq.S1/D.ltoreq. 1625000, the ratio of S1 to D may be 3286, 3290, 3295, 3300, 3310, 3320, 3350, 3400, 3500, 3600, 3800, 3900, 4000, 5000, 6000, 8000, 10000, 50000, 60000, 100000, 160000 or 1625000, for example, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable; the dimension of the S1/D ratio is microns. The S1/D ratio is further limited, so that a thin film resistor with better sheet resistance uniformity can be obtained, and the application requirement of the circuit board is met.
Preferably, S1 is 77592-319021 μm 2 For example, 77592 μm 2 、77600μm 2 、77700μm 2 、77800μm 2 、78000μm 2 、79000μm 2 、80000μm 2 、100000μm 2 、200000μm 2 、300000μm 2 Or 319021 μm 2 But are not limited to, the recited values, and other non-recited values within the range of values are equally applicable.
The thickness of the first conductive layer is preferably 2 to 30 μm, and may be, for example, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 20 μm, 25 μm, or 30 μm, but not limited to the listed values, and other values not listed in the range of values are equally applicable.
The thickness of the first resistive layer is preferably 10 to 200nm, and may be, for example, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm or 200nm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable. Wherein, the resistance value of the resistance layer ranges from 2 to 2000 omega.
Preferably, the first conductive layer has a bump structure formed by stacking dies.
Preferably, the material of the first conductive layer includes any one or at least two of copper, aluminum, titanium, zinc, iron, nickel, chromium, cobalt, silver or gold, typically, but not limited to, a combination of copper and aluminum, a combination of titanium and zinc, a combination of iron and nickel, a combination of chromium and copper, a combination of silver and gold, a combination of copper, aluminum and titanium, or a combination of zinc, iron and nickel, and the conductive layer is formed with a characteristic of easy etching.
Preferably, the material of the first resistive layer includes any one or a combination of at least two of Ni, cr, si, P, N, ti, pt, ta, mo and Sn, and typically, but not limited to, a combination of Ni and Cr, a combination of Si and P, a combination of N and Ti, a combination of Pt and Ta, a combination of Mo and Sn, a combination of Ni, cr and Si, or a combination of Ni, cr and Si.
Preferably, the first resistive layer is deposited on one or both surfaces of the first conductive layer.
Preferably, the deposition comprises any one or a combination of at least two of electroplating, electroless plating, physical vapor deposition, or chemical vapor deposition, including typically but not limited to a combination of electroplating and electroless plating, a combination of electroless plating and physical vapor deposition, a combination of physical vapor deposition and chemical vapor deposition, a combination of electroplating, electroless plating and physical vapor deposition, or a combination of electroless plating, physical vapor deposition and chemical vapor deposition.
In a second aspect, the present invention provides a laminate comprising the thin film resistor of the first aspect, and a film layer covering a surface of the thin film resistor on a side of the first resistive layer remote from the first conductive layer.
Preferably, the material of the film layer includes any one or a combination of at least two of polystyrene resin, vinyl acetate resin, polyester resin, polyethylene resin, polyamide resin, rubber resin, acrylic resin, phenolic resin, epoxy resin, polyimide resin, urethane resin, melamine resin, alkyd resin, ABF resin, typically, but not limited to, a combination of polystyrene resin and vinyl acetate resin, a combination of polyester resin and polyethylene resin, a combination of polyamide resin and rubber resin, a combination of acrylic resin and phenolic resin, a combination of polyimide resin and urethane resin, a combination of urethane resin and melamine resin, a combination of polystyrene resin and vinyl acetate resin, or a combination of alkyd resin and polyester resin.
The thickness of the film layer is preferably 0.5 to 100. Mu.m, for example, 0.5 μm, 0.6 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 10 μm, 12 μm, 14 μm, 18 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, but not limited to the listed values, and other non-listed values within the range of the values are equally applicable.
Preferably, the laminate further includes at least one second conductive layer covering a surface of the film layer on a side remote from the first resistive layer.
Preferably, the material of the second conductive layer includes any one or at least two of copper, aluminum, titanium, zinc, iron, nickel, chromium, cobalt, silver or gold, typically, but not limited to, a combination of copper and aluminum, a combination of titanium and zinc, a combination of iron and nickel, a combination of chromium and copper, a combination of silver and gold, or a combination of copper, aluminum and titanium, and the conductive layer is made to have an etching-easy property; that is, the second conductive layer is a foil made of the above materials, and may have a single-layer structure or a multilayer structure, and the material of the second conductive layer may be the same as or different from that of the first conductive layer.
Preferably, the laminate further includes a second resistive layer disposed between the film layer and a second conductive layer adjacent to the film layer.
Preferably, the material of the second resistive layer includes any one or at least two of NiCrSi, niCrAlSi, niP, alN, tiN, pt, cr, cr-SiO, cr-Si, ti-W, taN, mo or Ni-Sn, typically, but not limited to, a combination of NiCrSi and NiCrAlSi, a combination of NiCrAlSi and NiP, a combination of AlN and TiN, a combination of Pt and Cr, a combination of Cr-SiO and Cr-Si, a combination of Ti-W and TaN, a combination of Mo and Ni-Sn, a combination of NiCrSi, niCrAlSi and NiP, or a combination of NiCrAlSi, niP, alN and TiN; the material of the second resistive layer may be the same as or different from the material of the resistive layer, and may be set by one skilled in the art as required.
In the present invention, the surface area of the first conductive layer near the first resistive layer may be measured by directly measuring the surface area of the surface not provided with the first resistive layer using a measuring instrument; etching the first resistive layer of the surface by a specific reagent when the finished product is produced, leaving the first conductive layer, and testing the surface area by an instrument; or the surface of the first resistive layer of the finished product may be tested directly when the finished product is made to represent the surface area of the first conductive layer near the resistive layer side. The average grain diameter is an average of the grain diameters of a certain number of grains counted.
In a third aspect, the present invention provides a thin film resistive element comprising the thin film resistor of the first aspect, or the laminate of the second aspect.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the thin film resistor with good sheet resistance uniformity is obtained by controlling the ratio of the surface area of the first conductive layer close to the first resistor layer side to the horizontal total area of the crystal grains in the first conductive layer close to the first resistor layer side, and the thin film resistor also has good adhesion with the circuit board, so that the application of the circuit board is met and the bubbling is avoided.
Drawings
FIG. 1 is a scanning electron microscope picture of the thin film resistor in example 1 of the present invention
Wherein 1 is a raised structure 1.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
Example 1
The embodiment provides a thin film resistor, which comprises a copper first conductive layer with the thickness of 5 mu m and a NiCr first resistor layer with the thickness of 100nm, wherein the NiCr first resistor layer is covered on one side surface of the copper first conductive layer, the NiCr first resistor layer is obtained by physical vapor deposition on the surface of the copper first conductive layer, and the copper first conductive layer is provided with a convex structure 1 formed by stacking crystal grains;
the surface area of the copper first conductive layer near the NiCr first resistor layer side is S1, the horizontal total area of crystal grains in the copper first conductive layer near the NiCr first resistor layer side is S2, the numerical ratio of S1 to S2 is 3.0, the average diameter of the crystal grains in the copper first conductive layer is D, the numerical ratio of S1 to D is 26436, and S1 is 159814 μm 2 The D is 6 μm;
the film resistance was tested using a scanning electron microscope, and a picture of the scanning electron microscope was obtained as shown in fig. 1.
Example 2
The embodiment provides a thin film resistor, which comprises an aluminum first conductive layer with the thickness of 5 mu m and NiCr first resistor layers with the thickness of 50nm, wherein the NiCr first resistor layers are covered on the two side surfaces of the aluminum first conductive layer, the NiCr first resistor layers are obtained by electroplating on the surfaces of the aluminum first conductive layer, and the aluminum first conductive layer is provided with a convex structure 1 formed by stacking crystal grains;
the surface area of the aluminum first conductive layer near the NiCr first resistor layer side is S1, the horizontal total area of crystal grains in the aluminum first conductive layer near the NiCr first resistor layer side is S2, the numerical ratio of S1 to S2 is 2.3, the average diameter of the crystal grains in the aluminum first conductive layer is D, the numerical ratio of S1 to D is 5173, and S1 is 77592 mu m 2 The D is 15 μm.
Example 3
The embodiment provides a thin film resistor, which comprises a copper first conductive layer with the thickness of 5 mu m and NiCr first resistor layers with the thickness of 200nm, wherein the NiCr first resistor layers are covered on the two side surfaces of the copper first conductive layer, the NiCr first resistor layers are obtained by electroless plating on the surfaces of the copper first conductive layer, and the copper first conductive layer is provided with a convex structure 1 formed by stacking crystal grains;
the surface area of the copper first conductive layer close to the NiCr first resistor layer side is S1, the horizontal total area of crystal grains in the copper first conductive layer close to the NiCr first resistor layer side is S2, and the numerical ratio of S1 to S2 is as follows: 1.2, the average diameter of crystal grains in the copper first conductive layer is D, the numerical ratio of S1 to D is 11248, and S1 is 101235 mu m 2 The D is 9 μm.
Example 4
The embodiment provides a thin film resistor, which comprises a zinc first conductive layer with the thickness of 2 mu m and a NiCr first resistor layer with the thickness of 10nm, wherein the NiCr first resistor layer is covered on one side surface of the zinc first conductive layer, the NiCr first resistor layer is obtained by chemical vapor deposition on the surface of the zinc first conductive layer, and the zinc first conductive layer is provided with a convex structure 1 formed by stacking crystal grains.
The surface area of the zinc first conductive layer near the NiCr first resistor layer side is S1, the horizontal total area of crystal grains in the zinc first conductive layer near the NiCr first resistor layer side is S2, the numerical ratio of S1 to S2 is 6.2, the average diameter of the crystal grains in the zinc first conductive layer is D, the numerical ratio of S1 to D is 403166, and the S1 is 201583 mu m 2 The D is 0.5 μm.
Example 5
The embodiment provides a thin film resistor, which comprises an iron first conductive layer with the thickness of 15 mu m and NiCr first resistor layers with the thickness of 150nm, wherein the NiCr first resistor layers are covered on the two side surfaces of the iron first conductive layer, the NiCr first resistor layers are obtained through physical vapor deposition on the surfaces of the iron first conductive layer, and the iron first conductive layer is provided with a convex structure 1 formed by stacking crystal grains;
the surface area of the first conductive layer of the iron near the first resistance layer of NiCr is S1, the horizontal total area of the crystal grains in the first conductive layer of the iron near the first resistance layer of NiCr is S2, the numerical ratio of S1 to S2 is 2.8, the average diameter of the crystal grains in the first conductive layer of the iron is D, the numerical ratio of S1 to D is 319021, and S1 is 319021 μm 2 The D is 1 μm.
Example 6
This example provides a sheet resistor, except that the numerical ratio of S1 to D is 2015300, the S1 is 159814 μm 2 The procedure of example 1 was repeated except that D was 0.08. Mu.m.
Example 7
This example provides a sheet resistance, except that the numerical ratio of S1 to D is 2125, the S1 is 159814 μm 2 The procedure of example 1 was repeated except that D was 75.2. Mu.m.
Comparative example 1
This comparative example provides a sheet resistance which is the same as example 1 except that the numerical ratio of S1 to S2 is 1.1.
Comparative example 2
This comparative example provides a sheet resistance which is the same as example 1 except that the numerical ratio of S1 to S2 is 7.0.
Sheet resistance uniformity tests were performed on the sheet resistances in examples 1 to 5, examples 7 to 8 and comparative examples 1 and 2 and the first resistance layer in the laminate in example 6 using Fang Zuyi, and the sheet resistance uniformity test method was as follows: the four-probe test head is adopted, the universal meter is connected with the test head, DC1V voltage is applied to the test head, then the four-probe test head is used for testing a 2cm multiplied by 2cm area, the surface radian of the probe is Sr=0.9 mm, the pressure of the probe is 0.45+/-0.15N, and the probe interval is 3mm.
The sheet resistance was subjected to a thermal shock test at 288℃with reference to the standard (JIS C64711995-9.3) and the sheet resistance uniformity obtained by the test was shown in Table 1; wherein, the upper limit value of the sheet resistance uniformity is calculated= (M) max -M ave )/M ave X 100%; lower limit value= (M ave -M min )/M ave X 100%; wherein M is max At maximum, M min At minimum, M ave Is the average value.
TABLE 1
| Sheet resistance uniformity (upper limit value) | Sheet resistance uniformity (lower limit value) | Thermal shock testing | |
| Example 1 | 3.0％ | -2.9％ | No foaming |
| Example 2 | 2.6％ | -2.7％ | No foaming |
| Example 3 | 2.1％ | -2.2％ | No foaming |
| Example 4 | 4.2％ | -4.0％ | No foaming |
| Example 5 | 2.7％ | -2.6％ | No foaming |
| Example 6 | 2.8％ | -2.7％ | A small amount of foaming |
| Example 7 | 5.3％ | -5.5％ | No foaming |
| Comparative example 1 | 1.9％ | -1.2％ | High foaming |
| Comparative example 2 | 11.2％ | -10.9％ | No foaming |
From table 1:
(1) The sheet resistance uniformity of the sheet resistance provided in examples 1 to 5 is small in value, and thus has good sheet resistance uniformity;
(2) As can be seen from the comparison of the examples 1 and 6 and 7, the ratio of the values of S1 to D, that is, the ratio of the surface area of the first conductive layer near the first resistive layer side to the maximum distance of the grains in the first conductive layer, affects the sheet resistance uniformity of the thin film resistor, and when the ratio of the values of S1 to D is lower, the sheet resistance uniformity of the thin film resistor is poor; when the numerical ratio of S1 to D is higher, the foaming phenomenon of the thin film resistor can be caused during thermal shock;
(3) As is clear from the comparison of example 1 with comparative examples 1 and 2, the numerical ratio of S1 to S2, that is, the ratio of the surface area of the first conductive layer on the side close to the first resistive layer to the horizontal total area of the crystal grains in the first conductive layer on the side close to the first resistive layer affects the sheet resistance uniformity of the sheet resistance; when the numerical ratio of S1 to S2 is smaller, a large amount of bubble generation occurs in the thin film resistor, so that the application requirement is difficult to meet; when the numerical ratio of S1 to S2 is larger, the numerical value of sheet resistance uniformity of the sheet resistance is higher, that is, sheet resistance uniformity is worse.
In summary, according to the invention, by controlling the ratio of the surface area of the first conductive layer close to the first resistor layer side to the horizontal total area of the grains in the first conductive layer close to the first resistor layer side, the thin film resistor with good sheet resistance uniformity is obtained, and the thin film resistor has good adhesion with the circuit board, and does not foam to meet the requirement of the circuit board.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that fall within the technical scope of the present invention disclosed herein are within the scope of the present invention.
Claims (10)
1. The thin film resistor is characterized by comprising a first conductive layer and first resistor layers which are covered on one side or two side surfaces of the first conductive layer;
the surface area of the first conductive layer close to the first resistor layer side is S1, the horizontal total area of crystal grains in the first conductive layer close to the first resistor layer side is S2, and the numerical ratio of S1 to S2 is in the range of: S1/S2 is more than or equal to 1.2 and less than or equal to 6.2.
2. The thin film resistor of claim 1, wherein the average diameter of grains in the first conductive layer is D, and the numerical ratio of S1 to D ranges from: 3286 is less than or equal to S1/D is less than or equal to 1625000;
preferably, S1 is 77592-319021 μm 2 。
3. The thin film resistor of any of claims 1-2, wherein the thickness of the first resistive layer is 10-200 nm.
4. A sheet resistor according to any one of claims 1 to 3, wherein the first conductive layer has a bump structure formed by stacking crystal grains.
5. The thin film resistor of any of claims 1 to 4, wherein the material of the first resistive layer comprises any one or a combination of at least two of Ni, cr, si, P, N, ti, pt, ta, mo or Sn.
6. The thin film resistor of any one of claims 1 to 5, wherein the first resistive layer is obtained by deposition on one or both side surfaces of the first conductive layer;
preferably, the depositing comprises any one or a combination of at least two of electroplating, electroless plating, physical vapor deposition or chemical vapor deposition.
7. A laminate comprising the sheet resistor according to any one of claims 1 to 6, and a film layer covering a surface of the sheet resistor on a side of the first resistance layer remote from the first conductive layer.
8. The laminate according to claim 7, wherein the film layer is made of any one or a combination of at least two of a polystyrene resin, a vinyl acetate resin, a polyester resin, a polyethylene resin, a polyamide resin, a rubber resin, an acrylic resin, a phenolic resin, an epoxy resin, a polyimide resin, a urethane resin, a melamine resin, an alkyd resin, and an ABF resin;
preferably, the thickness of the film layer is 0.5-100 μm.
9. The laminate of claim 7 or 8, further comprising at least one second conductive layer overlying a side surface of the film layer remote from the first resistive layer;
preferably, the laminate further includes a second resistive layer disposed between the film layer and a second conductive layer adjacent to the film layer;
preferably, the material of the second resistive layer includes any one or a combination of at least two of NiCrSi, niCrAlSi, niP, alN, tiN, pt, cr, cr-SiO, cr-Si, ti-W, taN, mo or Ni-Sn.
10. A thin film resistive element comprising the thin film resistor according to any one of claims 1 to 6, or the laminate according to any one of claims 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311468704.7A CN117373766A (en) | 2023-11-06 | 2023-11-06 | Thin film resistor, laminated body and thin film resistor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311468704.7A CN117373766A (en) | 2023-11-06 | 2023-11-06 | Thin film resistor, laminated body and thin film resistor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117373766A true CN117373766A (en) | 2024-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311468704.7A Pending CN117373766A (en) | 2023-11-06 | 2023-11-06 | Thin film resistor, laminated body and thin film resistor element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117373766A (en) |
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2023
- 2023-11-06 CN CN202311468704.7A patent/CN117373766A/en active Pending
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