CN117369214A - Photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production - Google Patents
Photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production Download PDFInfo
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- CN117369214A CN117369214A CN202311552221.5A CN202311552221A CN117369214A CN 117369214 A CN117369214 A CN 117369214A CN 202311552221 A CN202311552221 A CN 202311552221A CN 117369214 A CN117369214 A CN 117369214A
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- quartz substrate
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- adhesive film
- photoresist
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- 239000010453 quartz Substances 0.000 title claims abstract description 149
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 239000000758 substrate Substances 0.000 title claims abstract description 138
- 238000000576 coating method Methods 0.000 title claims abstract description 44
- 239000003292 glue Substances 0.000 title claims abstract description 33
- 239000011248 coating agent Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000001259 photo etching Methods 0.000 title claims abstract description 11
- 239000002313 adhesive film Substances 0.000 claims abstract description 88
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 33
- 238000004140 cleaning Methods 0.000 claims description 18
- 230000003068 static effect Effects 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000003085 diluting agent Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical group COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Abstract
The invention discloses a photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production, and belongs to the technical field of photoetching glue coating. A photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production comprises the following steps: s1: the quartz substrate is pretreated and adsorbed on a vacuum chuck; s2: and controlling the rotation of the quartz substrate, dripping photoresist into the center of the quartz substrate, and rotating in a variable speed manner within a set time period. According to the invention, the quartz substrate is glued twice, in the first gluing, the photoresist on the quartz substrate can be quickly paved by adopting the first-stage variable speed glue homogenizing, and meanwhile, the edge of the quartz substrate is prevented from being textured, the flatness and uniformity of the first adhesive film of the quartz substrate are ensured, and the thickness of the first adhesive film is detected by using the infrared micrometer measuring instrument.
Description
Technical Field
The invention relates to the technical field of photoetching and gluing, in particular to a photoetching and gluing process capable of controlling gluing thickness for quartz substrate production.
Background
In the semiconductor manufacturing process, metal patterns are generally used to manufacture leads and electrodes of devices, and are generally formed by photolithography followed by wet or dry etching, but some metals are difficult to etch by wet or dry etching, and chemicals required for etching the metal patterns have an etching effect on other parts of the semiconductor devices, so lift-off processes are generally used to manufacture the metal patterns.
The Chinese patent with publication number of CN115793397A discloses a high-precision quartz substrate gluing and a production process thereof, wherein a high-temperature-resistant silicone resin material is added into a material for preparing a first glue layer, so that the high-temperature-resistant and impact-resistant quartz substrate gluing can resist high temperature and is difficult to deform when a second glue layer is pressurized, and the shape of a gluing pattern reaches an inverted T-shaped pattern. In the application, the thickness of the adhesive film in the adhesive homogenizing process cannot be controlled, the error of the film thickness is large, and the subsequent processing is greatly influenced.
Disclosure of Invention
The invention aims to provide a photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production, which is characterized in that when the thickness of a first glue film is ensured to be within a set range, a second glue film is coated on the basis of the first glue film, and the whole surface is smoother, so that the uniformity of the whole film layer is realized, and the problems in the prior art are solved.
In order to achieve the above purpose, the present invention provides the following technical solutions: a photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production comprises the following steps:
s1: the quartz substrate is pretreated and adsorbed on a vacuum chuck;
s2: controlling the quartz substrate to rotate, dripping photoresist into the center of the quartz substrate, rotating in a variable speed mode in a set time period, measuring whether the film thickness is in a set range, cleaning the back surface and drying;
s3: the quartz substrate is adsorbed on the vacuum chuck again, photoresist is dripped into the center of the quartz substrate, the quartz substrate rotates at a first speed, then rotates at a second speed, the thickness is controlled by adopting exhaust pressure, and the back surface is cleaned and then dried.
Preferably, the pretreatment process of the quartz substrate in S1 is as follows: and cleaning the quartz substrate needing to be glued, drying the cleaning water, drying, checking that no water mark exists, adsorbing the quartz substrate on a vacuum chuck, dripping a diluent into the quartz substrate, and throwing uniformly.
Preferably, the specific steps of S2 are as follows:
s21: controlling the quartz substrate to accelerate to 1000rpm within 1s, dripping photoresist into the quartz substrate, uniformly mixing the photoresist at a first stage speed change, and detecting the thickness of a first adhesive film at the same time;
s22: adopting a second stage of speed-changing glue homogenizing, detecting the thickness of the first adhesive film, and controlling the thickness of the adhesive film to be within a set range;
s23: controlling the rotating speed to be reduced to 1000rpm, maintaining for 15 seconds, reducing to a static state, washing edges of the quartz substrate and the back surface of the quartz substrate in the process, placing the quartz substrate into an oven, and baking for 20 minutes at 90 ℃.
Preferably, the specific process of the first stage variable speed spin is as follows: the speed is accelerated to 4500rpm, the speed is reduced to 3000rpm in 5s and 1s, the first layer of adhesive film of the quartz substrate is detected when the speed is 3000rpm, the error range between the first layer of adhesive film and the set film thickness is beyond 25%, the previous acceleration and the speed reduction are carried out again, the error range between the first layer of adhesive film and the set film thickness is within 25%, and the second stage of speed change adhesive homogenizing is carried out.
Preferably, the specific process of the second stage variable speed spin is as follows: accelerating to the set rotating speed within 1s, maintaining for 5s, decelerating to 3000rpm, maintaining for 5s, accelerating to the set rotating speed for 1-4 times and decelerating to 3000rpm, detecting the thickness of the first adhesive film of the quartz substrate when the speed is 3000rpm, and stopping the second stage speed change when the error range of the detected thickness of the film and the set thickness of the film is within 5%.
Preferably, the set rotational speed is calculated according to the detected thickness of the first adhesive film, and a calculation formula of the set rotational speed is as follows: v (V) 2 ＝3000(T 1 ·T 1 )/(T 2 ·T 2 ) Wherein V is 2 To set the rotation speed T 1 T is the current film thickness 2 To set the film thickness.
Preferably, the specific step of S3 is as follows:
s31: dropwise adding photoresist into the center of the quartz substrate, accelerating to a first speed within 3s, and keeping for 10s, wherein in the process, the photoresist dripping range of the quartz substrate is exhausted vertically;
s32: accelerating to rotate at a second speed within 3s, exhausting the gas vertically and uniformly to the whole upper surface of the quartz substrate, and monitoring the thickness of a second adhesive film on the quartz substrate;
s33: when the thickness of the second adhesive film on the quartz substrate reaches a set value, controlling the rotating speed to be reduced to 1000rpm, maintaining for 15 seconds, reducing to a static state, washing edges of the quartz substrate and cleaning the back surface in the process, placing the quartz substrate into an oven, and baking for 25 minutes at 100 ℃.
Preferably, the first speed is 2000rpm and the second speed is 3000rpm.
Preferably, the pressure of the exhaust gas is 100Pa-120Pa.
Preferably, the thickness of the first adhesive film and the second adhesive film is detected by an infrared micrometer gauge.
Compared with the prior art, the invention has the beneficial effects that:
and (3) gluing the quartz substrate twice, in the first gluing, adopting a first-stage variable speed glue homogenizing process, paving photoresist on the quartz substrate rapidly, simultaneously preventing reticulation at the edge of the quartz substrate, ensuring flatness and uniformity of a first adhesive film of the quartz substrate, detecting thickness of the first adhesive film by using an infrared micrometer measuring instrument, calculating a set rotating speed according to the detected thickness of the first adhesive film, carrying out speed adjustment on different quartz substrates in a targeted manner, ensuring that the error range of the thickness of the film is within 5%, coating a second adhesive film on the basis of the first adhesive film when ensuring that the thickness of the first adhesive film is within the set range, ensuring that the glue homogenizing speed of the second adhesive film is slower, applying pressure to the second adhesive film by using 100Pa-120Pa, and ensuring that the whole surface is smoother on the basis of a thick film layer, thereby realizing uniformity of the whole film layer.
Drawings
FIG. 1 is a graph showing the thickness distribution of a first adhesive film according to the present invention;
FIG. 2 is a graph showing the thickness distribution of a second adhesive film according to the present invention;
FIG. 3 is a graph showing the total film thickness distribution measurement according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the problem that the thickness of an adhesive film cannot be controlled in the conventional spin coating process, the error of the film thickness is large, and the subsequent processing is greatly affected, the following technical scheme is provided in the embodiment:
a photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production comprises the following steps:
s1: taking a quartz plate with the diameter of 50mm, preprocessing, adsorbing the quartz plate onto a vacuum chuck, specifically, cleaning the quartz substrate needing to be glued, drying the cleaned water, checking that no water mark exists, adsorbing the quartz substrate onto the vacuum chuck, dripping a diluent into the quartz substrate, and throwing the diluent uniformly, wherein the diluent is propylene glycol methyl ether acetate, the dripping amount is 5ml, the throwing time is 10-20s, and the rotating speed is 2000-3000rpm.
S2: controlling the rotation of the quartz substrate, dripping photoresist into the center of the quartz substrate, rotating in a variable speed manner within a set time period, measuring whether the film thickness is within a set range, cleaning the back surface, drying,
the method comprises the following specific steps:
s21: controlling the quartz substrate to accelerate to 1000rpm within 1s, dripping photoresist into the quartz substrate, uniformly mixing the photoresist at a first stage speed change, and detecting the thickness of a first adhesive film at the same time; the specific process of the first stage speed-changing spin coating is as follows: firstly accelerating to 4500rpm, keeping for 5s, rapidly spreading photoresist on a quartz substrate, throwing excessive photoresist out of the surface of the quartz substrate, decelerating to 3000rpm within 1s, keeping for 5s, reducing the speed, preventing reticulation at the edge of the quartz substrate when rotating too fast, detecting a first adhesive film of the quartz substrate when the speed is 3000rpm, accelerating and decelerating again when the error range of the first adhesive film and the set film thickness is beyond 25%, and entering a second stage speed-changing adhesive homogenizing when the error range of the first adhesive film and the set film thickness is within 25%, judging whether entering the next process or not through detecting the film thickness, and mainly playing the purpose of controlling the thickness of rough adhesive coating in the first stage speed-changing adhesive homogenizing process, so as to reduce the control range.
S22: adopting a second stage of speed-changing glue homogenizing, detecting the thickness of the first adhesive film, and controlling the thickness of the adhesive film to be within a set range; the specific process of the second stage speed-changing spin coating is as follows: the speed is accelerated to the set speed within 1s, the set speed is calculated according to the current film thickness, namely, the set speed is automatically adjusted according to the existing thickness, the influence of the speed on the glue coating thickness can be further realized, the speed is reduced to 3000rpm, the high speed is kept for a long time, the speed is easily reduced to be too high, the speed is properly reduced, the film layer is further gradually controlled to be reduced, the speed is accelerated for 1-4 times and the speed is reduced for 3000rpm, the specific times are determined according to the thickness detection result, the thickness of the first film of the quartz substrate is detected when the speed is 3000rpm, the second stage speed change is stopped when the error range of the detected film thickness and the set film thickness is within 5%, and the 5% is the allowable error of the film thickness.
The set rotating speed is calculated according to the detected thickness of the first adhesive film, and the calculation formula of the set rotating speed is as follows: v (V) 2 ＝3000(T 1 ·T 1 )/(T 2 ·T 2 ) Wherein V is 2 To set the rotation speed T 1 T is the current film thickness 2 To set the film thickness, the thickness of the first adhesive film is detected by an infrared micrometer gauge.
S23: and controlling the rotating speed to be reduced to 1000rpm, maintaining the rotating speed for 15 seconds, reducing the rotating speed to a static state, washing edges of the quartz substrate and the back surface of the quartz substrate in the process, cleaning redundant colloid at the edge of the quartz substrate and colloid at the back surface of the quartz substrate, placing the quartz substrate into an oven, and baking the quartz substrate at 90 ℃ for 20 minutes.
S3: the quartz substrate is adsorbed on the vacuum chuck again, photoresist is dripped into the center of the quartz substrate, the quartz substrate rotates at a first speed, then rotates at a second speed, the thickness is controlled by adopting exhaust pressure, and the back surface is cleaned and then dried. The method comprises the following specific steps:
s31: the photoresist is dripped into the center of the quartz substrate, the photoresist is accelerated to a first speed within 3s, the first speed is 2000rpm, the photoresist homogenizing speed is kept for 10s, the speed is slower than that of the first adhesive film, more adhesive solution can be reserved on the surface of the quartz substrate, the thickness of the prepared second adhesive film is thicker than that of the first adhesive film, in the process, the adhesive dripping range of the quartz substrate is vertically exhausted, the pressure of the exhaust is 100Pa-120Pa, the surface of the photoresist is pressurized through the exhaust, and then the dripped photoresist is pushed from the center to the edge of the quartz substrate, so that the adhesive film at the middle position of the quartz substrate is prevented from being excessively thick;
s32: the second speed is accelerated to be higher than the second speed in 3 seconds, the second speed is 3000rpm, in the process, the whole upper surface of the quartz substrate is vertically and uniformly exhausted, the pressure of the exhausted gas is 100Pa-120Pa, the uniform overall pressure is applied, the thinning of the second adhesive film can be accelerated, the pressure in the longitudinal direction is increased, the protruding position of the second adhesive film can be extruded to a concave position, the uniformity of the second adhesive film is further improved, the thickness of the second adhesive film on the quartz substrate is monitored, and the thickness of the second adhesive film is detected through an infrared micrometer measuring instrument;
s33: when the thickness of the second adhesive film on the quartz substrate reaches a set value, controlling the rotating speed to be reduced to 1000rpm, maintaining for 15 seconds, reducing to a static state, washing edges of the quartz substrate and cleaning the back surface in the process, placing the quartz substrate into an oven, and baking for 25 minutes at 100 ℃.
Embodiment one:
taking a quartz plate with the diameter of 50mm, uniformly coating the quartz plate by adopting the process, setting the thickness of a first adhesive film to be 1um, setting the thickness of a second adhesive film to be 2um, allowing the error to be 5 percent, dripping 5ml of photoresist when uniformly coating for the first time, firstly accelerating to 4500rpm, keeping the speed to 3000rpm in 5s and 1s, keeping the speed to 3831rpm in 1s, keeping the speed to 3000rpm in 5s and 1s, detecting the thickness of the first adhesive film of the quartz plate to be 1.08um and the speed to 349 rpm in 1s, keeping the speed to 3000rpm in 1s, detecting the thickness of the first adhesive film of the quartz plate, controlling the rotating speed to be 1000rpm, keeping the rotating speed to be 15s, then reducing to a static state, washing the edge of the quartz plate and cleaning the back surface, placing the quartz plate into an oven, baking at 90 ℃ for 20min, and detecting the average thickness of the first adhesive film to be 0.99um after airing to room temperature.
And (3) during the second photoresist homogenization, dropwise adding 5ml of photoresist, accelerating to 2000rpm within 3s, maintaining for 10s, vertically exhausting the photoresist dripping range of the quartz substrate, wherein the exhausting pressure is 100Pa, accelerating to 3000rpm within 3s, vertically and uniformly exhausting the photoresist to the whole upper surface of the quartz substrate, wherein the exhausting pressure is 100Pa, when the thickness of the second adhesive film is detected to be within 2.05um, rotating for 17s at a speed of 3000rpm, adjusting the rotating speed to 1000rpm, maintaining for 15s, then reducing to a static state, washing the edge and cleaning the back surface of the quartz substrate, placing the quartz substrate in an oven, baking at 100 ℃ for 25min, and detecting the average thickness of the second adhesive film to be 2.01um after airing to room temperature.
The film thickness distribution in this embodiment is measured to obtain a film thickness distribution measurement graph as shown in fig. 1-3, wherein the second film layer has a complementary effect on the first film layer, so that the whole film is smoother.
Embodiment two:
taking quartz plates with phi of 50mm, uniformly coating by adopting the process, setting the thickness of a first adhesive film to be 0.85um, setting the thickness of a second adhesive film to be 1.5um, allowing the error to be 5%, dripping 5ml of photoresist when uniformly coating for the first time, firstly accelerating to 4500rpm, keeping 5s, keeping the speed to 3000rpm in 1s, keeping 5s, detecting the thickness of the first adhesive film of a quartz substrate to be 1.14um, accelerating to 4500rpm in 1s, keeping 5s, keeping the speed to 3000rpm in 1s, detecting the thickness of the first adhesive film of the quartz substrate to be 0.97um, accelerating to 3907rpm in 1s, keeping 5s, keeping the speed to 3000rpm, detecting the thickness of the first adhesive film of the quartz substrate to be 0.91um, accelerating to 3438rpm in 1s, keeping 5s, keeping the speed to 3000rpm, detecting the thickness of the first adhesive film of the quartz substrate to be 0.86um, controlling the speed to be 1000rpm, keeping 15s, keeping the speed to be reduced to a static state, carrying out washing the quartz substrate to be 20m, and baking the quartz substrate to be 20m, and then carrying out the baking process for cleaning the quartz substrate to the back surface to be 20 m.
And (3) during the second photoresist homogenization, dropwise adding 5ml of photoresist, accelerating to 2000rpm within 3s, maintaining for 10s, vertically exhausting the photoresist dripping range of the quartz substrate, wherein the exhausting pressure is 100Pa, accelerating to 3000rpm within 3s, vertically and uniformly exhausting the photoresist to the whole upper surface of the quartz substrate, wherein the exhausting pressure is 100Pa, when the thickness of the second adhesive film is detected to be within 1.58um, rotating for 26s at a speed of 3000rpm, adjusting the rotating speed to 1000rpm, maintaining for 15s, then reducing to a static state, washing the edge and cleaning the back surface of the quartz substrate, placing the quartz substrate in an oven, baking at 100 ℃ for 25min, and detecting the average thickness of the second adhesive film to be 1.54um after airing to room temperature.
Embodiment III:
taking a quartz plate with the diameter of 50mm, uniformly coating by adopting the process, setting the thickness of a first adhesive film to be 1.1um, setting the thickness of a second adhesive film to be 1.8um, allowing the error to be 5%, dripping 6ml of photoresist when coating is performed for the first time, firstly accelerating to 4500rpm, keeping the speed to 3000rpm in 5s and 1s, keeping the speed to 3751rpm in 5s, keeping the speed to 3000rpm in 5s and 1s, keeping the speed to 3000rpm in 1s, detecting the thickness of the first adhesive film of the quartz substrate to be 1.12um, controlling the rotating speed to 1000rpm, keeping the speed to be 15s and then reducing to a static state, washing the edge and cleaning the back of the quartz substrate in the process, placing the quartz substrate into an oven, baking at 90 ℃, baking for 20min, and detecting the average thickness of the first adhesive film to be 1.09um after airing to room temperature.
And (3) during the second photoresist homogenization, dropwise adding 5ml of photoresist, accelerating to 2000rpm within 3s, maintaining for 10s, vertically exhausting the photoresist dripping range of the quartz substrate, wherein the exhausting pressure is 100Pa, accelerating to 3000rpm within 3s, vertically and uniformly exhausting the photoresist to the whole upper surface of the quartz substrate, the exhausting pressure is 120Pa, when the thickness of the second adhesive film is detected to be within 1.89um, rotating for 21s at a speed of 3000rpm, adjusting the rotating speed to 1000rpm, maintaining for 15s, then reducing to a static state, washing the edge and cleaning the back surface of the quartz substrate, placing the quartz substrate in an oven, baking at 100 ℃ for 25min, and detecting the average thickness of the second adhesive film to be 1.85um after airing to room temperature.
Summarizing the quartz plate gummed adhesive films obtained in the above examples, the following data table was obtained:
it can be seen from the above table that the errors of the adhesive films processed by the process are within 5%, and the first adhesive film and the second adhesive film are controllable.
In summary, glue spreading is carried out twice on a quartz substrate, in the first glue spreading, the photoresist on the quartz substrate can be spread rapidly by adopting a first-stage speed-changing glue spreading, reticulate patterns are prevented from occurring at the edge of the quartz substrate, the flatness and uniformity of a first adhesive film of the quartz substrate are ensured, the thickness of the first adhesive film is detected by using an infrared micrometer measuring instrument, the speed of different quartz substrates is calculated and set according to the detected thickness of the first adhesive film, the speed adjustment is carried out in a targeted manner, the error range of the thickness of the film is ensured to be within 5%, when the thickness of the first adhesive film is ensured to be within the set range, a second adhesive film is coated on the basis of the first adhesive film, the glue spreading speed of the second adhesive film is slower, the pressure is applied to the second adhesive film by using the air pressure of 100Pa-120Pa at the moment, and the whole surface is better flat on the basis of the thick film layer, so that the uniformity of the whole film layer is realized.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A photoetching glue coating process capable of controlling glue coating thickness for quartz substrate production is characterized by comprising the following steps:
s1: the quartz substrate is pretreated and adsorbed on a vacuum chuck;
s2: controlling the quartz substrate to rotate, dripping photoresist into the center of the quartz substrate, rotating in a variable speed mode in a set time period, measuring whether the film thickness is in a set range, cleaning the back surface and drying;
s3: the quartz substrate is adsorbed on the vacuum chuck again, photoresist is dripped into the center of the quartz substrate, the quartz substrate rotates at a first speed, then rotates at a second speed, the thickness is controlled by adopting exhaust pressure, and the back surface is cleaned and then dried.
2. The photoresist coating process for producing a quartz substrate with controllable coating thickness according to claim 1, wherein: the pretreatment process of the quartz substrate in the step S1 is as follows: and cleaning the quartz substrate needing to be glued, drying the cleaning water, drying, checking that no water mark exists, adsorbing the quartz substrate on a vacuum chuck, dripping a diluent into the quartz substrate, and throwing uniformly.
3. The photoresist coating process for producing a quartz substrate with controllable coating thickness according to claim 2, wherein: the specific steps of the S2 are as follows:
s21: controlling the quartz substrate to accelerate to 1000rpm within 1s, dripping photoresist into the quartz substrate, uniformly mixing the photoresist at a first stage speed change, and detecting the thickness of a first adhesive film at the same time;
s22: adopting a second stage of speed-changing glue homogenizing, detecting the thickness of the first adhesive film, and controlling the thickness of the adhesive film to be within a set range;
s23: controlling the rotating speed to be reduced to 1000rpm, maintaining for 15 seconds, reducing to a static state, washing edges of the quartz substrate and the back surface of the quartz substrate in the process, placing the quartz substrate into an oven, and baking for 20 minutes at 90 ℃.
4. A photoresist coating process for controlling the thickness of a photoresist coating for the production of a quartz substrate according to claim 3, wherein: the specific process of the first-stage speed-changing spin coating is as follows: the speed is accelerated to 4500rpm, the speed is reduced to 3000rpm in 5s and 1s, the first layer of adhesive film of the quartz substrate is detected when the speed is 3000rpm, the error range between the first layer of adhesive film and the set film thickness is beyond 25%, the previous acceleration and the speed reduction are carried out again, the error range between the first layer of adhesive film and the set film thickness is within 25%, and the second stage of speed change adhesive homogenizing is carried out.
5. The photoresist coating process for producing a quartz substrate with controllable coating thickness according to claim 4, wherein: the specific process of the second-stage variable speed spin coating is as follows: accelerating to the set rotating speed within 1s, maintaining for 5s, decelerating to 3000rpm, maintaining for 5s, accelerating to the set rotating speed for 1-4 times and decelerating to 3000rpm, detecting the thickness of the first adhesive film of the quartz substrate when the speed is 3000rpm, and stopping the second stage speed change when the error range of the detected thickness of the film and the set thickness of the film is within 5%.
6. The photoresist coating process for producing a quartz substrate with controllable coating thickness according to claim 5, wherein: the set rotation speed is calculated according to the detected thickness of the first adhesive filmThe calculation formula of the set rotating speed is as follows: v (V) 2 ＝3000(T 1 ·T 1 )/(T 2 ·T 2 ) Wherein V is 2 To set the rotation speed T 1 T is the current film thickness 2 To set the film thickness.
7. The photoresist coating process for producing a quartz substrate with controllable coating thickness according to claim 6, wherein: the specific steps of the S3 are as follows:
s31: dropwise adding photoresist into the center of the quartz substrate, accelerating to a first speed within 3s, and keeping for 10s, wherein in the process, the photoresist dripping range of the quartz substrate is exhausted vertically;
s32: accelerating to rotate at a second speed within 3s, exhausting the gas vertically and uniformly to the whole upper surface of the quartz substrate, and monitoring the thickness of a second adhesive film on the quartz substrate;
s33: when the thickness of the second adhesive film on the quartz substrate reaches a set value, controlling the rotating speed to be reduced to 1000rpm, maintaining for 15 seconds, reducing to a static state, washing edges of the quartz substrate and cleaning the back surface in the process, placing the quartz substrate into an oven, and baking for 25 minutes at 100 ℃.
8. The photoresist coating process for manufacturing a quartz substrate with controllable coating thickness according to claim 7, wherein: the first speed was 2000rpm and the second speed was 3000rpm.
9. The photoresist coating process for manufacturing a quartz substrate with controllable coating thickness according to claim 7, wherein: the pressure of the exhaust gas is 100Pa-120Pa.
10. The photoresist coating process for producing a quartz substrate with controllable coating thickness according to claim 9, wherein: the thickness of the first adhesive film and the second adhesive film is detected by an infrared micrometer measuring instrument.
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