CN117352853A - 一种全固态薄膜锂离子电池及其封装方法 - Google Patents

一种全固态薄膜锂离子电池及其封装方法 Download PDF

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CN117352853A
CN117352853A CN202311272235.1A CN202311272235A CN117352853A CN 117352853 A CN117352853 A CN 117352853A CN 202311272235 A CN202311272235 A CN 202311272235A CN 117352853 A CN117352853 A CN 117352853A
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郭航
谢天铮
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Abstract

一种全固态薄膜锂离子电池及其封装方法，通过微纳加工技术进行全固态薄膜锂离子电池的逐层制备氧化层、负极集流体层、负极层、固态电解质层、正极层、正极集流体层来实现薄膜锂离子电池的微型化与集成化；同时使用电感耦合等离子体化学气相沉积系统(ICPECVD)制备氮化硅钝化封装层。本发明通过稳定控制氮化硅制备温度在较低的130℃来防止全固态电池的固态电解质层材料在较高沉积温度下离子电导率降低进而影响电池循环性能。制备出的氮化硅薄膜降低了封装的水汽透过率，防止电池中的活性物质在日常使用中与环境中的空气和水分反应，提高电池的可靠性以及使用寿命。

Description

一种全固态薄膜锂离子电池及其封装方法
技术领域
本发明涉及锂离子电池领域，尤其涉及一种全固态薄膜锂离子电池及其封装方法。
背景技术
锂离子电池自20世纪发展起来后，凭借着较长的工作寿命、较高的能量密度和功率密度特点被广泛应用于手机、笔记本电脑等各类电子设备中，在人们日常生活中发挥着重要作用。但由于市场上的大部分锂离子电池采用的是液体电解质，在过度充电、碰撞或者内部短路的情况下容易发生爆炸，并且人们对于数码电子产品充电速率要求的不断提高，使得快充技术对于充电电流的要求也不断提高，电池充电过热也严重影响了传统锂离子电池的安全性能。同时近年来随着MEMS和IC技术的迅速发展，器件朝着微型化、集成化、智能化的方向发展，液体电解质限制了锂离子电池的体积，无法做到微型化与集成化。要从根本上解决传统锂离子电池的上述问题的办法是采用固态电解质，发展全固态锂离子电池。
常用的固态电解质LiPON作为全固态锂离子电池的关键，有着抑制锂枝晶生长和防止电解质泄露的优点。但仍然有许多缺点，其离子导电性相对较低，导致其离子传输速率较慢。其机械性能较差，在应用中易发生开裂、失效。微加工技术制备出的LiPON薄膜厚度在纳米尺度且精度高、层次性好，能完好解决上述问题。
全固态薄膜锂离子电池中的活性物质对于空气和水蒸气十分的敏感，尤其固态电解质LiPON在空气环境下易发生水解，因此选用具有较低水汽透过率的封装材料成为解决问题的关键。中国专利CN 204857873U公开一种全固态薄膜锂离子电池，其采用了首次充电后在阳极集流体Cu板上生成锂阳极的办法，但是只解决了常规阳极材料金属Li对于空气、水蒸气敏感的问题，没有解决固态电解质同样易受空气、水蒸气影响的问题。
中国专利CN105789372A公开了柔性一体化太阳电池/锂离子电池薄膜复合电池的制备方法，其采用聚酯薄膜将柔性一体化电池整体封装即在电池表面涂一层高分子胶，得到的封装层致密度差，稳定性差并且体积较大无法实现薄膜锂离子电池的集成化和微小化。
中国专利CN 102832412A公开了一种全固态薄膜锂离子电池的封装方法，其通过射频磁控溅射方法制备封装材料硅氮化合物，但其制备过程中控制衬底的温度在120～350℃，较高的沉积温度会造成全固态电池的固态电解质层材料离子电导率降低进而影响循环性能的问题。
发明内容
本发明的目的在于解决现有技术中的上述问题，提供一种全固态薄膜锂离子电池及其封装方法，采用微纳加工技术制备全固态薄膜锂离子电池实现薄膜锂离子电池的微型化与集成化；同时使用电感耦合等离子体化学气相沉积系统(ICPECVD)稳定控制氮化硅制备温度在较低的110～130℃来防止全固态电池的固态电解质层材料在较高沉积温度下离子电导率降低进而影响电池循环性能的问题。制备出的氮化硅薄膜降低了封装的水汽透过率，防止电池中的活性物质在日常使用中与环境中的空气和水分反应，提高电池的可靠性以及使用寿命。
为达到上述目的，本发明采用如下技术方案：
一种全固态薄膜锂离子电池，包括从下到上依次设置的硅片衬底、氧化层、负极集流体层、负极层、固态电解质层、正极层和正极集流体层。
所述的全固态薄膜锂离子电池的制备方法，包括以下步骤：
1)通过干氧-湿氧-干氧的氧化步骤将硅片衬底的表面氧化；
2)在氧化层面进行光刻胶的旋涂、光刻、显影、坚膜烘焙，以限定集流体窗口；
3)通过磁控溅射将Ti/Pt薄膜连续溅射在氧化层上作为负极集流体层；
4)去除光刻胶后，重新通过光刻来限定负极窗口，再进行磁控溅射将负极层Li4Ti5O12沉积在负极集流体层的上方；
5)去除光刻胶后，接着进行剩余薄膜窗口的光刻，通过磁控溅射将固态电解质膜LiPON沉积在负极层的上方；
6)通过磁控溅射将正极层LiCO2沉积在固态电解质薄膜上方；
7)通过磁控溅射将正极集流体层Al膜沉积在正极层上方。
步骤4)中，所述负极层的厚度为200～300nm。
步骤5)中，固态电解质层的厚度为150～200nm。
步骤6)中，正极层的厚度为200～300nm。
步骤7)中，正极集流体层的厚度为200～300nm。
一种全固态薄膜锂离子电池的封装方法，将全固态薄膜锂离子电池为衬底，通过电感耦合等离子体增强化学气相沉积，控制衬底温度为110～130℃，在电池器件表面沉积氮化硅封装层。
所述氮化硅封装层的厚度为300～700nm。
相对于现有技术，本发明技术方案取得的有益效果是：
1、本发明采用氮化硅材料进行封装，氮化硅层作为封装层防止电池活性材料与空气、水蒸气的接触，提高了电池的可靠性以及使用寿命。
2、本发明采用电感耦合等离子体增强化学气相沉积能够控制氮化硅的沉积温度在110～130℃，有效解决了其他化学气相沉积技术需在高温的环境下才能进行氮化硅的沉积导致电池的固态电解质层材料离子电导率降低进而影响循环性能的问题。
3、本发明的全固态锂离子电池采用微纳加工技术进行加工制造，不仅能够实现非常高的制造精度，而且制备出的纳米级尺寸薄膜在全固态电池中能够提供较大的比表面积和更短的离子扩散路径，同时高度的集成化能够让电池适应各种应用场合。
附图说明
图1为本发明全固态薄膜锂离子电池的剖面结构示意图；
图2为全固态薄膜锂离子电池的封装示意图；
图3为实施例1所获得的氮化硅封装层的表面以及厚度方向上的扫描电镜图；
图4为全固态电池随LiPON沉积温度变化的CV曲线图。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚、明白，以下结合附图和实施例，对本发明做进一步详细说明。
实施例1
如图1所示为氮化硅封装的微型全固态薄膜锂离子电池结构示意图，依次包括硅片衬底1、氧化层2、负极集流体层3、负极层4、固态电解质层5、正极层6、正极集流体层7，具体的制备步骤如下：
步骤1：选用N型(100)硅片作为衬底(约500μm厚)，经过标准清洗和表面活化后，通过干氧-湿氧-干氧的氧化步骤将硅片氧化，氧化层厚度在1μm；
步骤2：在氧化层上进行光刻胶AZ5214的旋涂后，96℃烘6min，选用负极集流体层掩模版来限定集流体窗口进行光刻、通过显影将窗口露出后，进行135℃后烘30min；
步骤3：通过磁控溅射系统JC500-3/D将Ti/Pt薄膜(20nm/200nm厚)连续溅射在硅片上作为负极集流体层；
步骤4：将样品浸入丙酮去除光刻胶后，重新旋涂光刻胶，选用负极层掩模版光刻来限定负极窗口，再进行磁控溅射将负极层Li4Ti5O12沉积在负极集流体层的上方，厚度为250nm；
步骤5：将样品浸入丙酮去除光刻胶后，重新旋涂光刻胶，选用固态电解质层掩模版光刻来限定电解质层窗口，通过在氮气氛围中溅射Li3PO4靶材将固态电解质层LiPON沉积在负极层的上方，厚度为175nm；
步骤6：通过磁控溅射将正极层LiCO2沉积在固态电解质层上方，厚度250nm；
步骤7：通过磁控溅射将正极集流体层Al膜沉积在正极层上方，厚度在250nm，完成未封装的全固态薄膜锂离子电池制备，得到如图1所示的电池结构剖面图；
步骤8：通过控制电感耦合等离子体增强化学气相沉积，温度为130℃、ICP射频功率350W、SiH4(5％)速率145sccm、Ar气速率140sccm、NH3速率8sccm、腔体压力5Pa的条件下，在电池器件表面沉积氮化硅，从而完成器件的制备，得到如图2所示的结构。
参见图3的中A)和B)图，用扫描电子显微镜(SEM)观察和测量本实施例制备的封装材料氮化硅的厚度为692nm，氮化硅层表面的致密度非常高，能够有效的抑制水蒸气和空气的透过。
参见图4，通过控制沉积固态电解质LiPON的沉积温度能够发现随着沉积温度从室温的不断增加，电池的循环性能不断衰减，因此控制氮化硅封装层的沉积温度在较低的温度并且保证氮化硅封装层沉积的可靠性对于全固态电池的性能至关重要。
本发明通过微纳加工技术进行全固态薄膜锂离子电池的逐层制备，包括氧化层、负极集流体层、负极层、固态电解质层、正极层、正极集流体层来实现薄膜锂离子电池的微型化与集成化；同时使用电感耦合等离子体化学气相沉积系统(ICPECVD)制备氮化硅钝化封装层。本发明通过稳定控制氮化硅制备温度在较低的110～130℃来防止全固态电池的固态电解质层材料的失效。制备出的氮化硅薄膜降低了封装的水汽透过率，防止电池中的活性物质在日常使用中与环境中的空气和水分反应，提高电池的可靠性以及使用寿命。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，在本发明的原理之内，还可以做出改进、替代、完善等，均应包含在本发明的保护范围之内。

Claims (8)

1.一种全固态薄膜锂离子电池，其特征在于：包括从下到上依次设置的硅片衬底、氧化层、负极集流体层、负极层、固态电解质层、正极层和正极集流体层。
2.一种如权利要求1所述的全固态薄膜锂离子电池的制备方法，其特征在于，包括以下步骤：
1)通过干氧-湿氧-干氧的氧化步骤将硅片衬底的表面氧化；
2)在氧化层面进行光刻胶的旋涂、光刻、显影、坚膜烘焙，以限定集流体窗口；
3)通过磁控溅射将Ti/Pt薄膜连续溅射在氧化层上作为负极集流体层；
4)去除光刻胶后，重新通过光刻来限定负极窗口，再进行磁控溅射将负极层Li4Ti5O12沉积在负极集流体层的上方；
5)去除光刻胶后，接着进行剩余薄膜窗口的光刻，通过磁控溅射将固态电解质膜LiPON沉积在负极层的上方；
6)通过磁控溅射将正极层LiCO2沉积在固态电解质薄膜上方；
7)通过磁控溅射将正极集流体层Al膜沉积在正极层上方。
3.如权利要求2所述的制备方法，其特征在于：步骤4)中，所述负极层的厚度为200～300nm。
4.如权利要求2所述的制备方法，其特征在于：步骤5)中，固态电解质层的厚度为150～200nm。
5.如权利要求2所述的制备方法，其特征在于：步骤6)中，正极层的厚度为200～300nm。
6.如权利要求2所述的制备方法，其特征在于：步骤7)中，正极集流体层的厚度为200～300nm。
7.一种如权利要求1所述的全固态薄膜锂离子电池的封装方法，其特征在于：将全固态薄膜锂离子电池为衬底，通过电感耦合等离子体增强化学气相沉积，控制衬底温度为110～130℃，在电池器件表面沉积氮化硅封装层。
8.如权利要求7所述的封装方法，其特征在于：氮化硅封装层的厚度为300～700nm。
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