CN117350241A - Electrostatic protection circuit simulation method and device, electronic equipment and storage medium - Google Patents

Electrostatic protection circuit simulation method and device, electronic equipment and storage medium Download PDF

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Publication number
CN117350241A
CN117350241A CN202210763737.3A CN202210763737A CN117350241A CN 117350241 A CN117350241 A CN 117350241A CN 202210763737 A CN202210763737 A CN 202210763737A CN 117350241 A CN117350241 A CN 117350241A
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China
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test
electrostatic protection
voltage
point data
protection device
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Chinese (zh)
Inventor
朱玲
田凯
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN202210763737.3A priority Critical patent/CN117350241A/en
Priority to PCT/CN2022/124190 priority patent/WO2024000913A1/en
Publication of CN117350241A publication Critical patent/CN117350241A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/32—Circuit design at the digital level
    • G06F30/33—Design verification, e.g. functional simulation or model checking
    • G06F30/3308—Design verification, e.g. functional simulation or model checking using simulation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

Abstract

The disclosure provides an electrostatic protection circuit simulation method, an electrostatic protection circuit simulation device, electronic equipment and a storage medium. The electrostatic protection circuit simulation method comprises the following steps: inputting a plurality of test pulses to the electrostatic protection device to be tested to obtain a group of test data corresponding to each test pulse of the electrostatic protection device to be tested, wherein the test data comprise test voltage and test current, and the test current comprises leakage current and conduction current; determining trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of test data; constructing a first characteristic curve of the electrostatic protection device to be tested according to the trigger point data and the failure point data, and constructing a second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the conduction current corresponding to the trigger point data and the failure point data; setting the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation. The embodiment of the disclosure can realize the simulation of the electrostatic protection device.

Description

Electrostatic protection circuit simulation method and device, electronic equipment and storage medium
Technical Field
The disclosure relates to the technical field of integrated circuit manufacturing, and in particular relates to an electrostatic protection circuit simulation method and device, electronic equipment and a storage medium.
Background
The electrostatic protection circuit is an important functional module in the chip, and is generally implemented using an ESD (electrostatic discharge) device connected to an electrostatic input port. According to different sources of static electricity (inside the chip or outside the chip), the static electricity input ports are different, and the static voltage directions of the static electricity input ports are different. When a large electrostatic voltage from any direction of the electrostatic input port reaches one end of the ESD device, the ESD device is turned on to discharge electrostatic charges, thereby protecting the chip circuit.
ESD device has a foldback characteristic (Snapback): before the voltage across the ESD device reaches the trigger voltage, the ESD device is not conducted; when the voltage at two ends of the ESD device reaches the trigger voltage, the ESD device is conducted, and the conducting current exists, so that the voltage at two ends is reduced along with the increase of the conducting current; when the voltage at two ends of the ESD device reaches the maintaining voltage, the ESD device is fully conducted, and the voltage at two ends and the conducting current are increased at the same time. Thus, in an ESD device, the device is turned on with one voltage across it corresponding to two on currents.
In chip design, it is often necessary to simulate a circuit using simulation software to verify the operation of the circuit. Each device in the simulation software needs to have a fixed voltage-current corresponding relation, so the simulation software cannot simulate the ESD device and a circuit applying the ESD device based on the reverse characteristic of the ESD device, and a difficulty is brought to the verification process of the chip design.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The disclosure aims to provide an electrostatic protection circuit simulation method, an electrostatic protection circuit simulation device, electronic equipment and a storage medium, which are used for overcoming the problem that an ESD device cannot realize simulation at least to a certain extent.
According to a first aspect of an embodiment of the present disclosure, there is provided an electrostatic protection circuit simulation method, including: inputting a plurality of test pulses to a to-be-tested electrostatic protection device to obtain a group of test data corresponding to each test pulse of the to-be-tested electrostatic protection device, wherein the test data comprise test voltage and test current, and the test current comprises leakage current and conduction current; determining trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of test data; constructing a first characteristic curve of the electrostatic protection device to be tested according to the trigger point data and the failure point data, and constructing a second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the conduction current corresponding to the trigger point data and the failure point data; and setting the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation.
In an exemplary embodiment of the present disclosure, two adjacent test pulses have a fixed time difference, test times corresponding to two adjacent sets of test data have the fixed time difference, and determining trigger point data, maintenance point data, and failure point data of the electrostatic protection device to be tested according to multiple sets of test data includes: when the (i+1) th test voltage in the (i+1) th test data is smaller than the (i) th test voltage in the (i+1) th test data and the (i+1) th conduction current in the (i+1) th test data is larger than the (i) th conduction current in the (i) th test data, determining the (i) th test data as the trigger point data, wherein i is more than or equal to 1; when the j+1 test voltage in the j+1 test data is larger than the j test voltage in the j test data, and the j+1 conduction current in the j+1 test data is larger than the j conduction current in the j test data, determining the j test data as the maintaining point data, wherein j is larger than or equal to i; when the difference between the leakage current in the k+1 group of test data and the leakage current in the k group of test data is larger than a preset value, determining the k group of test data as the failure point data, wherein k is larger than or equal to j.
In an exemplary embodiment of the present disclosure, the constructing the first characteristic curve of the electrostatic protection device under test according to the trigger point data and the failure point data includes: determining a trigger point in a voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the trigger point data, and determining a failure point in the voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the failure point data; acquiring a first test data set between the trigger point and the origin of the voltage-current test curve; determining a first curve between the origin and the trigger point in the first characteristic curve according to the first test data set; and generating the first characteristic curve according to the trigger point, the failure point and the first curve fitting.
In an exemplary embodiment of the disclosure, the constructing the second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the on current corresponding to the trigger point data, and the failure point data includes: determining a third node, wherein the voltage of the third node is a test voltage corresponding to the maintenance point data, and the current of the third node is a conduction current corresponding to the trigger point data; determining a failure point in a voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the conduction current corresponding to the failure point data; and generating the second characteristic curve according to the origin of the voltage-current test curve, the third node and the failure point in a fitting way, wherein the second characteristic curve passes through the origin, the third node and the failure point, and the second characteristic curve is continuously smooth at the third node and the failure point.
In an exemplary embodiment of the present disclosure, the setting the first characteristic curve or the second characteristic curve as the equivalent model of the electrostatic protection device to be tested includes: in the simulation process, when the voltage difference between two ends of the electrostatic protection device to be tested is larger than or equal to the test voltage in the failure point data, marking that the electrostatic protection device to be tested fails.
In an exemplary embodiment of the present disclosure, the simulating, which sets the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested, includes: setting the first characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation, and setting the test voltage corresponding to the trigger point data as a trigger voltage; if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage in the simulation process and the test voltage in the failure point data is not reached in the simulation process, recording the electrostatic protection device to be tested as a first device; if the voltage difference between two ends of the electrostatic protection device to be tested reaches the test voltage in the failure point data in the simulation process, setting the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for secondary simulation, and setting the test voltage corresponding to the maintenance point data as a trigger voltage; and if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage and does not reach the test voltage in the failure point data in the secondary simulation process, recording the electrostatic protection device to be tested as a second type device.
In an exemplary embodiment of the present disclosure, further comprising: and constructing a third characteristic curve of the electrostatic protection device to be tested according to the test voltage and the conduction current corresponding to the maintenance point data and the failure point data.
In an exemplary embodiment of the disclosure, the constructing the third characteristic curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the maintenance point data and the failure point data includes: determining a fourth node according to the maintenance point data, wherein the voltage of the fourth node is equal to the test voltage in the maintenance point data, and the current of the fourth node is equal to the conduction current in the maintenance point data; determining a failure point according to the test voltage and the conduction current corresponding to the failure point data; acquiring a second test data set between the fourth node and the failure point, and determining a second curve according to the second test data set; and constructing a third characteristic curve according to the fourth node, the origin of the voltage-current test curve and the second curve, wherein the third characteristic curve passes through the origin, the fourth node and the failure point, and the third characteristic curve is continuously smooth at the fourth node and the failure point.
In an exemplary embodiment of the present disclosure, further comprising: when the second characteristic curve is set as an equivalent model of the electrostatic protection device to be tested for simulation, if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, setting the third characteristic curve as the equivalent model of the electrostatic protection device to be tested for three times; in the three-time simulation process, if the voltage difference between two ends of the electrostatic protection device to be tested does not exceed the test voltage in the failure point data all the time, recording that the electrostatic protection device to be tested is a third type device; and if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, recording that the electrostatic protection device to be tested is a fourth type device.
In an exemplary embodiment of the present disclosure, the setting the first characteristic curve or the second characteristic curve as the equivalent model of the electrostatic protection device to be tested includes: in the simulation process, if the voltage at two ends of the electrostatic protection device to be tested does not exceed the trigger voltage all the time, the electrostatic input voltage in the current simulation circuit is improved, and then the simulation is performed again.
According to a second aspect of the embodiments of the present disclosure, there is provided an electrostatic protection circuit simulation apparatus, including: the test data acquisition module is used for inputting a plurality of test pulses into the electrostatic protection device to be tested so as to acquire a group of test data corresponding to each test pulse of the electrostatic protection device to be tested, wherein the test data comprises test voltage and test current, and the test current comprises leakage current and conduction current; the node analysis module is used for determining trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of test data; the characteristic curve construction module is set to construct a first characteristic curve of the electrostatic protection device to be tested according to the trigger point data and the failure point data, and construct a second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the conduction current corresponding to the trigger point data and the failure point data; and the equivalent model simulation module is used for setting the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation.
According to a third aspect of the present disclosure, there is provided an electronic device comprising: a memory; and a processor coupled to the memory, the processor configured to perform the method of any of the above based on instructions stored in the memory.
According to a fourth aspect of the present disclosure, there is provided a computer-readable storage medium having stored thereon a program which, when executed by a processor, implements the electrostatic protection circuit emulation method as set forth in any one of the above.
According to the embodiment of the disclosure, the first characteristic curve and the second characteristic curve are constructed based on the trigger point data, the maintenance point data and the failure point data of the ESD device, the equivalent circuit of the ESD device is constructed by using the two characteristic curves, the simulation of the ESD device can be realized in simulation software, whether the performance of the ESD device meets the electrostatic protection requirement of the current circuit or not is verified, and the chip design efficiency is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. It will be apparent to those of ordinary skill in the art that the drawings in the following description are merely examples of the disclosure and that other drawings may be derived from them without undue effort.
Fig. 1 is a flowchart of an electrostatic protection circuit simulation method in an exemplary embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a current-voltage curve of an ESD device.
Fig. 3 is a sub-flowchart of step S2 in one embodiment of the present disclosure.
FIG. 4 is a schematic diagram of trigger point data, maintenance point data, failure point data in one embodiment of the present disclosure.
Fig. 5 is a schematic diagram of a first characteristic and a second characteristic in one embodiment of the present disclosure.
Fig. 6 is a schematic diagram of a third characteristic curve in one embodiment of the present disclosure.
Fig. 7 is a sub-flowchart of step S4 in one embodiment of the present disclosure.
Fig. 8 is a sub-flowchart of step S4 in another embodiment of the present disclosure.
Fig. 9 is a block diagram of an electrostatic protection circuit emulation device in an exemplary embodiment of the present disclosure.
Fig. 10 is a block diagram of an electronic device in an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the present disclosure. One skilled in the relevant art will recognize, however, that the aspects of the disclosure may be practiced without one or more of the specific details, or with other methods, components, devices, steps, etc. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
Furthermore, the drawings are only schematic illustrations of the present disclosure, in which the same reference numerals denote the same or similar parts, and thus a repetitive description thereof will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in software or in one or more hardware modules or integrated circuits or in different networks and/or processor devices and/or microcontroller devices.
The following describes example embodiments of the present disclosure in detail with reference to the accompanying drawings.
Fig. 1 is a flowchart of an electrostatic protection circuit simulation method in an exemplary embodiment of the present disclosure.
Referring to fig. 1, the electrostatic protection circuit simulation method 100 may include:
step S1, inputting a plurality of test pulses into an electrostatic protection device to be tested to obtain a group of test data corresponding to each test pulse of the electrostatic protection device to be tested, wherein the test data comprise test voltage and test current, and the test current comprises leakage current and conduction current;
step S2, determining trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of test data;
Step S3, a first characteristic curve of the electrostatic protection device to be tested is constructed according to the trigger point data and the failure point data, and a second characteristic curve of the electrostatic protection device to be tested is constructed according to the test voltage corresponding to the maintenance point data, the conduction current corresponding to the trigger point data and the failure point data;
and S4, setting the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation.
According to the embodiment of the disclosure, the first characteristic curve and the second characteristic curve are constructed based on the trigger point data, the maintenance point data and the failure point data of the ESD device, the equivalent circuit of the ESD device is constructed by using the two characteristic curves, the simulation of the ESD device can be realized in simulation software, whether the performance of the ESD device meets the electrostatic protection requirement of the current circuit or not is verified, and the chip design efficiency is improved.
Next, each step of the electrostatic protection circuit simulation method 100 will be described in detail.
In step S1, a plurality of test pulses are input to the electrostatic protection device to be tested, so as to obtain a set of test data corresponding to each test pulse of the electrostatic protection device to be tested, wherein the test data comprises a test voltage and a test current, and the test current comprises a leakage current and a conduction current.
In one embodiment of the present disclosure, the test pulse is, for example, a TLP (Transmission Line Pulse ). TLP is an electrostatic analog square wave that includes a set of square waves of progressively increasing amplitude that indirectly simulate the damaging capabilities of some electrostatic pulse forms and the ESD device CLAMP (CLAMP) triggering capabilities of different rising edges by adjusting the rising edges and pulse widths. Because of the square wave, TLP can obtain a V-I (voltage-current) point by applying one pulse at a time, and applying voltages of different magnitudes to the ESD device until the ESD device fails, to obtain a complete V-I curve of the ESD device in response to the electrostatic pulse.
Fig. 2 is a schematic diagram of a current-voltage curve of an ESD device.
In the test data corresponding to one test pulse, the test voltage is the pulse amplitude corresponding to the test pulse (TLP) under a certain condition, and the test current includes a conduction current I1 and a Leakage current I2 (Leakage current).
Referring to fig. 2, the V-I curve of the esd device includes a curve 20 corresponding to the test voltage-on current and a curve 21 corresponding to the test voltage-leakage current, each point on the curve 20 corresponds to a test voltage value V and an on current value I1, and each point on the curve 21 corresponds to a leakage current value I2. Curves 20 and 21 may be divided into four phases A, B, C, D according to the four states of the ESD device.
In stage a, before the voltage V across the ESD device (i.e., the test voltage) reaches the trigger voltage Vt1 of the ESD device, the ESD device is turned off, and both the on-current I1 and the leakage current I2 are low. Phase a is also referred to as the non-triggered phase.
In the stage B, after the voltage V at two ends of the ESD device reaches the trigger voltage Vt1 of the ESD device and before the voltage V reaches the maintaining voltage Vh, the ESD device is conducted, the conducting current I1 rises, the voltage V at two ends of the ESD device drops, and the leakage current I2 is lower. Phase B is also referred to as the trigger phase.
In stage C, after the voltage V across the ESD device reaches the sustain voltage Vh of the ESD device and before the voltage V reaches the failure voltage Vt2, the ESD device is turned on, and the on current I1 and the voltage V across the ESD device rise simultaneously, so that the leakage current I2 is low. Stage C is also referred to as the maintenance stage.
In stage D, after the voltage V across the ESD device reaches the failure voltage Vt2 of the ESD device, the ESD device breaks down, the leakage current I2 suddenly increases (three orders of magnitude more than before), the on-current I1 also increases at the same time, but the voltage across the ESD decreases. Stage D is also referred to as the failure stage.
The input ports for inputting a plurality of test pulses to the electrostatic protection device to be tested (ESD device to be tested) can be determined according to the type and connection mode of the electrostatic protection device to be tested. When the electrostatic protection device to be tested is connected between the power supply (VDD) and the zero point bit (VSS) and plays a role of voltage clamping (clamp), the plurality of test pulses can be respectively input to the power supply (VDD); when the electrostatic protection device to be tested is connected to an input/output (IO) pin, the plurality of test pulses can be input to the IO pin when the electrostatic protection device to be tested plays a role in electrostatic protection of the IO pin. Since the TLP test is a conventional ESD device test means, it will not be described in detail herein.
In step S2, trigger point data, maintenance point data, and failure point data of the electrostatic protection device to be tested are determined according to the plurality of sets of test data.
Fig. 3 is a sub-flowchart of step S2 in one embodiment of the present disclosure.
Referring to fig. 3, in one embodiment, two adjacent test pulses have a fixed time difference, and test times corresponding to two adjacent sets of test data have a fixed time difference, and step S2 may include:
step S21, when the (i+1) th test voltage in the (i+1) th test data is smaller than the (i) th test voltage in the (i+1) th test data and the (i+1) th conduction current in the (i+1) th test data is larger than the (i) th conduction current in the (i) th test data, determining the (i) th test data as trigger point data, wherein i is more than or equal to 1;
step S22, when the j+1 test voltage in the j+1 test data is greater than the j test voltage in the j test data, and the j+1 conduction current in the j+1 test data is greater than the j conduction current in the j test data, determining the j test data as maintenance point data, wherein j is greater than or equal to i;
and S23, when the difference between the leakage current in the k+1th group of test data and the leakage current in the k group of test data is larger than a preset value, determining the k group of test data as failure point data, wherein k is larger than or equal to j.
FIG. 4 is a schematic diagram of trigger point data, maintenance point data, failure point data in one embodiment of the present disclosure.
Referring to fig. 4, in the I-V curve 20 of the ESD device shown in fig. 2, when the decrease of the test voltage and the increase of the on-current in the two adjacent sets of test data are detected, it can be determined that the ESD device enters the trigger phase, the previous test voltage is the trigger voltage Vt1 of the ESD device, and the on-current It1 corresponding to the trigger voltage Vt1 and the trigger voltage Vt1 constitute the trigger point data (Vt 1, it 1) of the ESD device.
After the trigger point data is acquired, when the test voltage and the on current in two adjacent sets of test data are detected to be increased, the ESD device can be judged to enter a maintenance stage, wherein the previous test voltage is the maintenance voltage Vh of the ESD device, and the maintenance voltage Vh and the on current Ih corresponding to the maintenance voltage Vh form the maintenance point data (Vh, ih 1) of the ESD device.
After the sustain point data is acquired, the amplitude of the test pulse continues to be increased and the leakage current I2 of the ESD device begins to be monitored. When the leakage current I2 suddenly increases (for example, the value exceeds three orders of magnitude compared with the leakage current corresponding to the previous set of test data), it can be determined that the ESD device enters the failure stage, where the previous test voltage is the failure voltage Vt2 of the ESD device, and the failure voltage Vt2 and the on current It2 (instead of the leakage current) corresponding to the failure voltage Vt2 constitute failure point data (Vt 2, it 2) of the ESD device.
In step S3, a first characteristic curve of the electrostatic protection device to be tested is constructed according to the trigger point data and the failure point data, and a second characteristic curve of the electrostatic protection device to be tested is constructed according to the test voltage corresponding to the maintenance point data, the on current corresponding to the trigger point data and the failure point data.
Fig. 5 is a schematic diagram of a first characteristic and a second characteristic in one embodiment of the present disclosure.
Referring to fig. 5, in one embodiment of the present disclosure, a trigger point T1 (Vt 1, it 1) in a voltage-current test curve of an electrostatic protection device under test may be first determined according to a test voltage Vt1 and an on current It1 corresponding to trigger point data (Vt 1, it 1), and a failure point T2 (Vt 2, it 2) in a voltage-current test curve of an electrostatic protection device under test may be determined according to a test voltage Vt2 and an on current It2 corresponding to failure point data (Vt 2, it 2).
Next, a first test data set between the trigger point T1 and the origin O of the voltage-current test curve is obtained, a first curve 511 between the origin and the trigger point in the first characteristic curve 51 is determined according to the first test data set, and finally the first characteristic curve 51 is generated according to the trigger point T1, the failure point T2 and the first curve 511 in a fitting manner.
The first characteristic curve 51 passes through the origin O, the trigger point T1 and the failure point T2, and is continuously smooth at the trigger point T1 and the failure point T2, and has a unique slope. By constructing the first curve 511 from the first test data set, the slope of the first characteristic curve 51 at the trigger point T1 can be obtained, thereby constructing a continuously smoothed first characteristic curve 51.
When the second characteristic curve 52 is constructed, the third node T3 (Vh, it 1) may be determined from the sustain point data (Vh, ih) and the trigger point data (Vt 1, it 1), the voltage of the third node T3 is equal to the test voltage Vh in the sustain point data, and the current of the third node T3 is equal to the on-current It1 in the trigger point data (Vt 1, it 1); a point of failure T2 is then determined.
Next, a second characteristic curve 52 is constructed according to the origin O, the third node T3 and the failure point T2, and the second characteristic curve 52 passes through the origin O, the third node T3 and the failure point T2, is continuously smooth at the third node T3 and the failure point T2, and has a unique slope. In the second characteristic curve 52, the on current It1 corresponding to the trigger point data is set as the trigger current corresponding to the ESD device, and the trigger voltage Vh is determined.
The first characteristic curve 51 and the second characteristic curve 52 are both linear curves, and any one of the two characteristic curves is set as the characteristic curve corresponding to the electrostatic protection device to be tested for simulation, so that the requirements of simulation software on the V-I characteristics of the device can be met.
As can be seen from fig. 5, the trigger voltage Vh of the second characteristic curve 52 is lower than the actual trigger voltage Vt1 of the electrostatic protection device to be tested, so that the device model is built to simulate by using the second characteristic curve 52, and compared with the actual situation of the electrostatic protection device to be tested, the device model can trigger earlier, and can shunt the functional component earlier, and the simulation result is better than the actual situation.
Under the same current condition (for example, the on-current Ih of the sustain point data), the clamping voltage (the voltage across the ESD device) of the device model corresponding to the first characteristic curve 51 is greater than the actual clamping voltage of the actual ESD device, and the simulation effect is inferior to the actual situation.
In another embodiment of the present disclosure, in addition to the first characteristic curve 51 and the second characteristic curve 52, a third characteristic curve of the electrostatic protection device to be tested may be constructed according to the test voltage and the on current corresponding to the sustain point data, and the failure point data.
Fig. 6 is a schematic diagram of a third characteristic curve in one embodiment of the present disclosure.
Referring to fig. 6, in one embodiment, the fourth node T4 (Vh, ih) may be first determined according to the sustain point data (Vh, ih), the voltage of the fourth node T4 is equal to the test voltage Vh in the sustain point data, and the current of the third node T3 is equal to the on current Ih in the sustain point data.
Then, according to the failure point T2 (Vt 2, it 2) determined in the foregoing embodiment, a second test data set between the fourth node T4 and the failure point T2 is acquired, a second curve 531 is determined according to the second test data set, and finally a third characteristic curve 53 is constructed according to the fourth node T4, the origin O, and the second curve 531. In the third characteristic curve 53, the on current It1 corresponding to the trigger point data is set as the trigger current corresponding to the ESD device, and the trigger voltage is determined to be Vt3.
In one embodiment, the slope of the second curve 531 at the fourth node T4 may be obtained according to the second curve 531 constructed by the second test data set, and the third curve 532 is generated by fitting between the fourth node T4 and the origin according to the slope, so that the slope of the third curve 532 at the fourth node T4 is equal to the slope of the second curve 531 at the fourth node T4, and finally, the third characteristic curve 53 is generated according to the third curve 532 and the second curve 531.
The third characteristic curve 53 passes through the origin O, the fourth node T4 (Vh, ih), and the failure point T2 (Vt 2, it 2), is continuously smoothed at both the fourth node T4 and the failure point T2, and has a unique slope. The second test data set may be obtained by using data actually existing between the fourth node T4 and the failure point T2, so as to obtain a characteristic curve closer to the actual situation.
As can be seen from fig. 6, the trigger voltage Vt3 of the third characteristic curve 53 is much smaller than the actual trigger voltage Vt1 of the ESD device, so that the trigger time is much longer than the actual time and the simulation effect is much better than that of the actual device when the third characteristic curve 53 is used to model the ESD device.
In step S4, the first characteristic curve or the second characteristic curve is set as an equivalent model of the electrostatic protection device to be tested for simulation.
According to the first characteristic curve 51, the second characteristic curve 52, and the third characteristic curve 53 shown in fig. 6, in the simulation process, when the voltage difference between two ends of the electrostatic protection device to be tested is greater than or equal to the test voltage Vt2 in the failure point data, the failure of the electrostatic protection device to be tested can be marked.
Fig. 7 is a sub-flowchart of step S4 in one embodiment of the present disclosure.
Referring to fig. 7, in one embodiment, step S4 may include:
step S41, setting a first characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation, and setting a test voltage corresponding to trigger point data as a trigger voltage;
step S42, if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage in the simulation process and the test voltage in the failure point data is not reached in the simulation process, recording the electrostatic protection device to be tested as a first type device;
Step S43, if the voltage difference between two ends of the electrostatic protection device to be tested reaches the test voltage in the failure point data in the simulation process, setting the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for secondary simulation, and setting the test voltage corresponding to the maintenance point data as a trigger voltage;
and S44, if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage and does not reach the test voltage in the failure point data in the secondary simulation process, recording the electrostatic protection device to be tested as a second type device.
When the first characteristic curve is set as an equivalent model of the electrostatic protection device to be tested for simulation, the simulation effect is inferior to the actual effect according to the above analysis. If the electrostatic protection device to be tested can still be triggered under the impact of the electrostatic pulse and does not fail under the condition, the electrostatic protection device to be tested can meet the electrostatic protection requirement of the current circuit necessarily in practical application, and can be recorded as a first type device.
If the first characteristic curve is set as the equivalent model of the electrostatic protection device to be tested to simulate, the electrostatic protection device to be tested fails, the possible failure cause is that the current model is harsh, and the second characteristic curve can be set as the equivalent model of the electrostatic protection device to be tested to perform secondary simulation, so that a model with better simulation effect is used.
In the secondary simulation, if the electrostatic protection device to be tested can be triggered under the impact of electrostatic pulse and does not fail, the electrostatic protection device to be tested simulated by the current model can be considered to meet the electrostatic protection requirement of the current circuit, and can be marked as a second type device. The second type of device is inferior to the first type of device, but the high probability can meet the electrostatic protection requirements of the current circuit.
The electrostatic protection device to be tested can be evaluated and used according to actual requirements by a person skilled in the art.
Fig. 8 is a sub-flowchart of step S4 in another embodiment of the present disclosure.
Referring to fig. 8, in one embodiment, if the electrostatic protection device to be tested fails in the second simulation, that is, the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, step S4 may include:
step S45, setting a third characteristic curve as an equivalent model of the electrostatic protection device to be tested for three simulation;
step S46, in the third simulation process, if the voltage difference between two ends of the electrostatic protection device to be tested does not exceed the test voltage in the failure point data all the time, recording that the electrostatic protection device to be tested is a third type device;
and step S47, if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, recording that the electrostatic protection device to be tested is a fourth type device.
In the embodiment shown in fig. 8, for the electrostatic protection device to be tested that fails in the second simulation, a third simulation (hereinafter referred to as third simulation) may be performed using a model with better performance constructed according to the third characteristic curve, and if the electrostatic protection device to be tested is triggered and does not fail in the third simulation, it is indicated that the device has a small probability of meeting the electrostatic protection requirement of the current circuit, and may be denoted as a third type device, which is inferior to the second type device. If the electrostatic protection device to be tested still fails in the three-time simulation, the electrostatic protection device to be tested can not meet the electrostatic protection requirement of the current circuit absolutely, is directly abandoned in the current circuit, is replaced by using the electrostatic protection device of other types, and is marked as a fourth type device which can not be used in the current circuit.
In any simulation process, if the voltage at two ends of the electrostatic protection device to be tested does not exceed the trigger voltage all the time, the electrostatic voltage input in the test is insufficient to test the electrostatic protection device to be tested, and the simulation can be performed again after the electrostatic input voltage in the current simulation circuit is improved.
According to the embodiment, through the simulation method of the electrostatic protection circuit, simulation can be realized on the ESD device with the reverse characteristic in simulation software, the matching degree of the currently used ESD device and the current circuit can be detected, a data basis is provided for follow-up device type selection, device design change and other works, and the chip design efficiency is effectively improved.
Corresponding to the above method embodiments, the present disclosure further provides an electrostatic protection circuit simulation device, which may be used to perform the above method embodiments.
Fig. 9 is a block diagram of an electrostatic protection circuit emulation device in an exemplary embodiment of the present disclosure.
Referring to fig. 9, the electrostatic protection circuit emulation device 900 may include:
a test data obtaining module 91, configured to input a plurality of test pulses to the electrostatic protection device to be tested, so as to obtain a set of test data corresponding to each test pulse of the electrostatic protection device to be tested, where the test data includes a test voltage and a test current, and the test current includes a leakage current and a conduction current;
the node analysis module 92 is configured to determine trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of the test data;
a characteristic curve construction module 93, configured to construct a first characteristic curve of the electrostatic protection device to be tested according to the trigger point data and the failure point data, and construct a second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the on current corresponding to the trigger point data, and the failure point data;
The equivalent model simulation module 94 is configured to set the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation.
In an exemplary embodiment of the present disclosure, two adjacent test pulses have a fixed time difference, and two adjacent sets of test data correspond to test times having the fixed time difference, and the node analysis module 92 is configured to: when the (i+1) th test voltage in the (i+1) th test data is smaller than the (i) th test voltage in the (i+1) th test data and the (i+1) th conduction current in the (i+1) th test data is larger than the (i) th conduction current in the (i) th test data, determining the (i) th test data as the trigger point data, wherein i is more than or equal to 1; when the j+1 test voltage in the j+1 test data is larger than the j test voltage in the j test data, and the j+1 conduction current in the j+1 test data is larger than the j conduction current in the j test data, determining the j test data as the maintaining point data, wherein j is larger than or equal to i; when the difference between the leakage current in the k+1 group of test data and the leakage current in the k group of test data is larger than a preset value, determining the k group of test data as the failure point data, wherein k is larger than or equal to j.
In one exemplary embodiment of the present disclosure, the characteristic curve construction module 93 is configured to: determining a trigger point in a voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the trigger point data, and determining a failure point in the voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the failure point data; acquiring a first test data set between the trigger point and the origin of the voltage-current test curve; determining a first curve between the origin and the trigger point in the first characteristic curve according to the first test data set; and generating the first characteristic curve according to the trigger point, the failure point and the first curve fitting.
In one exemplary embodiment of the present disclosure, the characteristic curve construction module 93 is configured to: determining a third node, wherein the voltage of the third node is a test voltage corresponding to the maintenance point data, and the current of the third node is a conduction current corresponding to the trigger point data; determining a failure point in a voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the conduction current corresponding to the failure point data; and generating the second characteristic curve according to the origin of the voltage-current test curve, the third node and the failure point in a fitting way, wherein the second characteristic curve passes through the origin, the third node and the failure point, and the second characteristic curve is continuously smooth at the third node and the failure point.
In one exemplary embodiment of the present disclosure, the equivalent model simulation module 94 is configured to: in the simulation process, when the voltage difference between two ends of the electrostatic protection device to be tested is larger than or equal to the test voltage in the failure point data, marking that the electrostatic protection device to be tested fails.
In one exemplary embodiment of the present disclosure, the equivalent model simulation module 94 is configured to: setting the first characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation, and setting the test voltage corresponding to the trigger point data as a trigger voltage; if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage in the simulation process and the test voltage in the failure point data is not reached in the simulation process, recording the electrostatic protection device to be tested as a first device; if the voltage difference between two ends of the electrostatic protection device to be tested reaches the test voltage in the failure point data in the simulation process, setting the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for secondary simulation, and setting the test voltage corresponding to the maintenance point data as a trigger voltage; and if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage and does not reach the test voltage in the failure point data in the secondary simulation process, recording the electrostatic protection device to be tested as a second type device.
In an exemplary embodiment of the present disclosure, the characteristic curve construction module 93 is further configured to: and constructing a third characteristic curve of the electrostatic protection device to be tested according to the test voltage and the conduction current corresponding to the maintenance point data and the failure point data.
In one exemplary embodiment of the present disclosure, the characteristic curve construction module 93 is configured to: determining a fourth node according to the maintenance point data, wherein the voltage of the fourth node is equal to the test voltage in the maintenance point data, and the current of the fourth node is equal to the conduction current in the maintenance point data; determining a failure point according to the test voltage and the conduction current corresponding to the failure point data; acquiring a second test data set between the fourth node and the failure point, and determining a second curve according to the second test data set; and constructing a third characteristic curve according to the fourth node, the origin of the voltage-current test curve and the second curve, wherein the third characteristic curve passes through the origin, the fourth node and the failure point, and the third characteristic curve is continuously smooth at the fourth node and the failure point.
In one exemplary embodiment of the present disclosure, the equivalent model simulation module 94 is configured to: when the second characteristic curve is set as an equivalent model of the electrostatic protection device to be tested for simulation, if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, setting the third characteristic curve as the equivalent model of the electrostatic protection device to be tested for three times; in the three-time simulation process, if the voltage difference between two ends of the electrostatic protection device to be tested does not exceed the test voltage in the failure point data all the time, recording that the electrostatic protection device to be tested is a third type device; and if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, recording that the electrostatic protection device to be tested is a fourth type device.
In one exemplary embodiment of the present disclosure, the equivalent model simulation module 94 is configured to: in the simulation process, if the voltage at two ends of the electrostatic protection device to be tested does not exceed the trigger voltage all the time, the electrostatic input voltage in the current simulation circuit is improved, and then the simulation is performed again.
Since each function of the apparatus 900 is described in detail in the corresponding method embodiments, the disclosure is not repeated herein.
It should be noted that although in the above detailed description several modules or units of a device for action execution are mentioned, such a division is not mandatory. Indeed, the features and functionality of two or more modules or units described above may be embodied in one module or unit in accordance with embodiments of the present disclosure. Conversely, the features and functions of one module or unit described above may be further divided into a plurality of modules or units to be embodied.
In an exemplary embodiment of the present disclosure, an electronic device capable of implementing the above method is also provided.
Those skilled in the art will appreciate that the various aspects of the invention may be implemented as a system, method, or program product. Accordingly, aspects of the invention may be embodied in the following forms, namely: an entirely hardware embodiment, an entirely software embodiment (including firmware, micro-code, etc.) or an embodiment combining hardware and software aspects may be referred to herein as a "circuit," module "or" system.
An electronic device 1000 according to this embodiment of the present invention is described below with reference to fig. 10. The electronic device 1000 shown in fig. 10 is merely an example and should not be construed as limiting the functionality and scope of use of embodiments of the present invention.
As shown in fig. 10, the electronic device 1000 is embodied in the form of a general purpose computing device. Components of electronic device 1000 may include, but are not limited to: the at least one processing unit 1010, the at least one memory unit 1020, and a bus 1030 that connects the various system components, including the memory unit 1020 and the processing unit 1010.
Wherein the storage unit stores program code that is executable by the processing unit 1010 such that the processing unit 1010 performs steps according to various exemplary embodiments of the present invention described in the above section of the "exemplary method" of the present specification. For example, the processing unit 1010 may perform methods as shown in embodiments of the present disclosure.
The memory unit 1020 may include readable media in the form of volatile memory units such as Random Access Memory (RAM) 10201 and/or cache memory unit 10202, and may further include Read Only Memory (ROM) 10203.
The storage unit 1020 may also include a program/utility 10204 having a set (at least one) of program modules 10205, such program modules 10205 including, but not limited to: an operating system, one or more application programs, other program modules, and program data, each or some combination of which may include an implementation of a network environment.
Bus 1030 may be representing one or more of several types of bus structures including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus architectures.
The electronic device 1000 can also communicate with one or more external devices 1100 (e.g., keyboard, pointing device, bluetooth device, etc.), with one or more devices that enable a user to interact with the electronic device 1000, and/or with any device (e.g., router, modem, etc.) that enables the electronic device 1000 to communicate with one or more other computing devices. Such communication may occur through an input/output (I/O) interface 1050. Also, electronic device 1000 can communicate with one or more networks such as a Local Area Network (LAN), a Wide Area Network (WAN), and/or a public network, such as the Internet, through network adapter 1060. As shown, the network adapter 1060 communicates with other modules of the electronic device 1000 over the bus 1030. It should be appreciated that although not shown, other hardware and/or software modules may be used in connection with the electronic device 1000, including, but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, data backup storage systems, and the like.
From the above description of embodiments, those skilled in the art will readily appreciate that the example embodiments described herein may be implemented in software, or may be implemented in software in combination with the necessary hardware. Thus, the technical solution according to the embodiments of the present disclosure may be embodied in the form of a software product, which may be stored in a non-volatile storage medium (may be a CD-ROM, a U-disk, a mobile hard disk, etc.) or on a network, including several instructions to cause a computing device (may be a personal computer, a server, a terminal device, or a network device, etc.) to perform the method according to the embodiments of the present disclosure.
In an exemplary embodiment of the present disclosure, a computer-readable storage medium having stored thereon a program product capable of implementing the method described above in the present specification is also provided. In some possible embodiments, the various aspects of the invention may also be implemented in the form of a program product comprising program code for causing a terminal device to carry out the steps according to the various exemplary embodiments of the invention as described in the "exemplary methods" section of this specification, when said program product is run on the terminal device.
The program product for implementing the above-described method according to an embodiment of the present invention may employ a portable compact disc read-only memory (CD-ROM) and include program code, and may be run on a terminal device such as a personal computer. However, the program product of the present invention is not limited thereto, and in this document, a readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
Furthermore, the above-described drawings are only schematic illustrations of processes included in the method according to the exemplary embodiment of the present invention, and are not intended to be limiting. It will be readily appreciated that the processes shown in the above figures do not indicate or limit the temporal order of these processes. In addition, it is also readily understood that these processes may be performed synchronously or asynchronously, for example, among a plurality of modules.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims (13)

1. An electrostatic protection circuit simulation method is characterized by comprising the following steps:
inputting a plurality of test pulses to a to-be-tested electrostatic protection device to obtain a group of test data corresponding to each test pulse of the to-be-tested electrostatic protection device, wherein the test data comprise test voltage and test current, and the test current comprises leakage current and conduction current;
determining trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of test data;
constructing a first characteristic curve of the electrostatic protection device to be tested according to the trigger point data and the failure point data, and constructing a second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the conduction current corresponding to the trigger point data and the failure point data;
and setting the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation.
2. The method for simulating an electrostatic protection circuit according to claim 1, wherein two adjacent test pulses have a fixed time difference, and two adjacent sets of test data correspond to test times having the fixed time difference, and determining trigger point data, sustain point data, and failure point data of the electrostatic protection device to be tested according to the plurality of sets of test data comprises:
When the (i+1) th test voltage in the (i+1) th test data is smaller than the (i) th test voltage in the (i+1) th test data and the (i+1) th conduction current in the (i+1) th test data is larger than the (i) th conduction current in the (i) th test data, determining the (i) th test data as the trigger point data, wherein i is more than or equal to 1;
when the j+1 test voltage in the j+1 test data is larger than the j test voltage in the j test data, and the j+1 conduction current in the j+1 test data is larger than the j conduction current in the j test data, determining the j test data as the maintaining point data, wherein j is larger than or equal to i;
when the difference between the leakage current in the k+1 group of test data and the leakage current in the k group of test data is larger than a preset value, determining the k group of test data as the failure point data, wherein k is larger than or equal to j.
3. The method of claim 1, wherein constructing a first characteristic curve of the esd protection device under test according to the trigger point data and the failure point data comprises:
determining a trigger point in a voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the trigger point data, and determining a failure point in the voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the on current corresponding to the failure point data;
Acquiring a first test data set between the trigger point and the origin of the voltage-current test curve;
determining a first curve between the origin and the trigger point in the first characteristic curve according to the first test data set;
and generating the first characteristic curve according to the trigger point, the failure point and the first curve fitting.
4. The method of claim 1, wherein constructing the second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the sustain point data, the on-current corresponding to the trigger point data, and the failure point data comprises:
determining a third node, wherein the voltage of the third node is a test voltage corresponding to the maintenance point data, and the current of the third node is a conduction current corresponding to the trigger point data;
determining a failure point in a voltage-current test curve of the electrostatic protection device to be tested according to the test voltage and the conduction current corresponding to the failure point data;
and generating the second characteristic curve according to the origin of the voltage-current test curve, the third node and the failure point in a fitting way, wherein the second characteristic curve passes through the origin, the third node and the failure point, and the second characteristic curve is continuously smooth at the third node and the failure point.
5. The method of claim 1, wherein the setting the first characteristic curve or the second characteristic curve as the equivalent model of the electrostatic protection device to be tested comprises:
in the simulation process, when the voltage difference between two ends of the electrostatic protection device to be tested is larger than or equal to the test voltage in the failure point data, marking that the electrostatic protection device to be tested fails.
6. The method for simulating an electrostatic protection circuit according to claim 1, wherein the setting the first characteristic curve or the second characteristic curve as the equivalent model of the electrostatic protection device to be tested comprises:
setting the first characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation, and setting the test voltage corresponding to the trigger point data as a trigger voltage;
if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage in the simulation process and the test voltage in the failure point data is not reached in the simulation process, recording the electrostatic protection device to be tested as a first device;
if the voltage difference between two ends of the electrostatic protection device to be tested reaches the test voltage in the failure point data in the simulation process, setting the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for secondary simulation, and setting the test voltage corresponding to the maintenance point data as a trigger voltage;
And if the voltage difference between two ends of the electrostatic protection device to be tested reaches the trigger voltage and does not reach the test voltage in the failure point data in the secondary simulation process, recording the electrostatic protection device to be tested as a second type device.
7. The electrostatic protection circuit simulation method according to claim 1, further comprising:
and constructing a third characteristic curve of the electrostatic protection device to be tested according to the test voltage and the conduction current corresponding to the maintenance point data and the failure point data.
8. The method of claim 7, wherein constructing a third characteristic curve of the electrostatic protection device to be tested according to the test voltage and the on-current corresponding to the sustain point data and the failure point data comprises:
determining a fourth node according to the maintenance point data, wherein the voltage of the fourth node is equal to the test voltage in the maintenance point data, and the current of the fourth node is equal to the conduction current in the maintenance point data;
determining a failure point according to the test voltage and the conduction current corresponding to the failure point data;
acquiring a second test data set between the fourth node and the failure point, and determining a second curve according to the second test data set;
And constructing a third characteristic curve according to the fourth node, the origin of the voltage-current test curve and the second curve, wherein the third characteristic curve passes through the origin, the fourth node and the failure point, and the third characteristic curve is continuously smooth at the fourth node and the failure point.
9. The electrostatic protection circuit simulation method according to any one of claims 7 to 8, further comprising:
when the second characteristic curve is set as an equivalent model of the electrostatic protection device to be tested for simulation, if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, setting the third characteristic curve as the equivalent model of the electrostatic protection device to be tested for three times;
in the three-time simulation process, if the voltage difference between two ends of the electrostatic protection device to be tested does not exceed the test voltage in the failure point data all the time, recording that the electrostatic protection device to be tested is a third type device;
and if the voltage difference between two ends of the electrostatic protection device to be tested exceeds the test voltage in the failure point data, recording that the electrostatic protection device to be tested is a fourth type device.
10. The method of claim 5, wherein the setting the first characteristic curve or the second characteristic curve as the equivalent model of the electrostatic protection device to be tested comprises:
in the simulation process, if the voltage at two ends of the electrostatic protection device to be tested does not exceed the trigger voltage all the time, the electrostatic input voltage in the current simulation circuit is improved, and then the simulation is performed again.
11. An electrostatic protection circuit emulation device, comprising:
the test data acquisition module is used for inputting a plurality of test pulses into the electrostatic protection device to be tested so as to acquire a group of test data corresponding to each test pulse of the electrostatic protection device to be tested, wherein the test data comprises test voltage and test current, and the test current comprises leakage current and conduction current;
the node analysis module is used for determining trigger point data, maintenance point data and failure point data of the electrostatic protection device to be tested according to a plurality of groups of test data;
the characteristic curve construction module is set to construct a first characteristic curve of the electrostatic protection device to be tested according to the trigger point data and the failure point data, and construct a second characteristic curve of the electrostatic protection device to be tested according to the test voltage corresponding to the maintenance point data, the conduction current corresponding to the trigger point data and the failure point data;
And the equivalent model simulation module is used for setting the first characteristic curve or the second characteristic curve as an equivalent model of the electrostatic protection device to be tested for simulation.
12. An electronic device, comprising:
a memory; and
a processor coupled to the memory, the processor configured to perform the electrostatic protection circuit emulation method of any one of claims 1-10 based on instructions stored in the memory.
13. A computer-readable storage medium having stored thereon a program which, when executed by a processor, implements the electrostatic protection circuit emulation method according to any one of claims 1 to 10.
CN202210763737.3A 2022-06-29 2022-06-29 Electrostatic protection circuit simulation method and device, electronic equipment and storage medium Pending CN117350241A (en)

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