CN117328144A - Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy - Google Patents
Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy Download PDFInfo
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- CN117328144A CN117328144A CN202311149602.9A CN202311149602A CN117328144A CN 117328144 A CN117328144 A CN 117328144A CN 202311149602 A CN202311149602 A CN 202311149602A CN 117328144 A CN117328144 A CN 117328144A
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- gallium
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- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 95
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 38
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title claims abstract 12
- 239000002184 metal Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims description 40
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 208000012839 conversion disease Diseases 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 206010011985 Decubitus ulcer Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a gallium boat reactor for maintaining stable pre-reaction rate of an HVPE reaction furnace by utilizing buoyancy, which comprises a chamber for containing gallium metal and a movable cover plate which is arranged in the chamber and floats above the liquid level of the gallium metal by means of the buoyancy of the gallium metal; the chamber comprises an air inlet channel, an air outlet channel and a gallium source storage area; the movable cover plate comprises a top cover and a side wall which forms an air passage together with the top cover, and a base is arranged below the side wall. The chamber for containing gallium metal is not communicated with the movable cover plate, so that the movable cover plate which floats above the gallium metal liquid surface by means of the buoyancy of the gallium metal can move up and down along with the gallium metal liquid surface along with the consumption of the gallium metal. Because the weight of the movable cover plate and the volume of the bottom base positioned in the gallium metal are fixed, the buoyancy force is fixed, the volume of the gas path channel formed by the side wall and the top cover is fixed, the liquid level of the gallium metal is ensured to drop, but the pre-reaction channel is fixed, so that the pre-reaction is realized without changing along with the consumption of the gallium metal.
Description
Technical Field
The invention relates to the field of HVPE reactors, in particular to a gallium boat reactor which maintains stable pre-reaction rate of an HVPE reaction furnace by utilizing buoyancy.
Background
GaN can be used in the fields of illumination display, microwave radio frequency and the like, and has wide application. However, gaN cannot be prepared using a conventional pulling method or a decubitus method, and thus a currently common GaN single crystal substrate preparation method is a Halide Vapor Phase Epitaxy (HVPE). In HVPE equipment, liquid gallium metal and hydrogen chloride gas are subjected to pre-reaction to generate gallium chloride gas, and then the gallium chloride gas reacts with ammonia gas to generate GaN crystals. In the current HVPE reaction furnace, liquid gallium metal is contained in a cylindrical gallium boat, hydrogen chloride gas flows in from an air inlet channel, and flows out from an air outlet channel after the gallium metal surface reacts with the gallium metal. Because gallium metal is consumed as the reaction proceeds, the gallium metal liquid level is reduced, the gas path channel of hydrogen chloride gas is widened, the residence time of the gas is prolonged, the reaction conversion rate is changed, and the HVPE reaction rate is further affected.
Disclosure of Invention
The invention aims at overcoming the defects in the prior art and provides a gallium boat reactor which maintains stable pre-reaction rate of an HVPE reaction furnace by utilizing buoyancy. The invention provides a gallium boat design utilizing gallium metal buoyancy, which ensures that the volume of a hydrogen chloride gas passage is kept unchanged all the time so as to ensure that the reaction conversion rate of gas is not changed along with the reduction of the gallium metal liquid level, thereby ensuring that the HVPE reaction rate is stable.
The aim of the invention is achieved by the following technical scheme:
a gallium boat reactor for maintaining stable pre-reaction rate of an HVPE reaction furnace by utilizing buoyancy is characterized in that: comprises a chamber for containing gallium metal and a movable cover plate which is arranged in the chamber and floats above the gallium metal liquid level by means of the buoyancy of the gallium metal.
Further, the chamber includes an inlet channel, an outlet channel, and a gallium source storage region.
Further, the movable cover plate comprises a top cover and a side wall which forms an air passage together with the top cover, and a base is arranged below the side wall.
Further, the air inlet channel and the air outlet channel extend into the chamber, and the air inlet channel and the air outlet channel are wrapped above the top cover of the movable cover plate which floats above the gallium metal liquid level by means of gallium metal buoyancy, so that the air inlet channel and the air outlet channel are not directly communicated in the process that the movable cover plate descends along with the gallium metal liquid level, and reaction gas always flows through the gas path channel of the gallium metal liquid level and then flows out of the outlet.
Further, the top cover is provided with an air inlet hole and an air outlet hole, the air inlet hole corresponds to the air inlet channel, and the air outlet hole corresponds to the air outlet channel.
Further, the cavity is a columnar barrel with the inner diameter of 20-1000 mm and the height of 20-500 mm, and the thickness of the barrel wall of the columnar barrel is 1-20 mm; the aperture of the air inlet channel is 1-400 mm, the aperture of the air outlet channel is 1-400 mm, the wall thickness of the air inlet channel and the air outlet channel is 1-10 mm, and the length of the air inlet channel and the air outlet channel penetrating into the cavity is 8-200 mm.
Further, the top cover is composed of a circular bottom plate and flow limiting walls arranged on the circular bottom plate, the number of the side walls is N, N is any integer between 3 and 9, the side walls are strip-shaped or spiral, the side walls divide the gas path into N+1 sections and are communicated with each other, and gas of the gas inlet hole fully reacts with gallium metal after being folded back and flows out of the gas outlet hole.
Further, the thickness of the round bottom plate is 1-10 mm, and the diameter is 20-1000 mm; the flow limiting wall is annular, and forms a closed loop around the inner diameter of the cavity, the air inlet and the air outlet, so that the air of the air inlet and the air outlet is prevented from being directly communicated; the outer diameter of the flow-limiting wall is the same as that of the circular bottom plate, the thickness of the flow-limiting wall is 1-10 mm, and the height of the flow-limiting wall is 1-100 mm; the width of the side wall is 10-900 mm, the height is 5-400 mm, and the thickness is 1-20 mm; the base is 10-900 mm in width, 1-100 mm in height and 1-100 mm in thickness.
Further, the material of the chamber is quartz, silicon carbide ceramic or aluminum nitride ceramic.
Further, the movable cover plate is made of quartz, silicon carbide ceramic or aluminum nitride ceramic
The beneficial effects of the invention are as follows:
according to the gallium boat design based on the gallium metal buoyancy, the chamber for accommodating the gallium metal in a reaction manner is not communicated with the movable cover plate which floats above the gallium metal liquid level by means of the gallium metal buoyancy, so that the movable cover plate which floats above the gallium metal liquid level by means of the gallium metal buoyancy can move up and down along with the gallium metal liquid level along with gallium metal consumption. Because the weight of the movable cover plate and the volume of the bottom base positioned in the gallium metal are fixed, the buoyancy force is fixed, the volume of the gas path channel formed by the side wall and the top cover is fixed, the liquid level of the gallium metal is ensured to drop, but the pre-reaction channel is fixed, so that the pre-reaction is realized without changing along with the consumption of the gallium metal.
Drawings
FIG. 1 is a schematic structural view of embodiment 1 of the present invention;
FIG. 2 is a schematic view of the structure of section A of embodiment 1 of the present invention;
FIG. 3 is a schematic view showing the structure of section B of embodiment 1 of the present invention;
reference numerals: 100-chamber, 200-removable cover, 101-inlet channel, 102-outlet channel, 103-gallium metal, 201-top cover, 202-side wall, 203-base, 2011-circular bottom plate, 2012-restrictor wall.
Detailed Description
For a further understanding of the present invention, preferred embodiments of the invention are described below in conjunction with the examples, but it should be understood that these descriptions are merely intended to illustrate further features and advantages of the invention, and are not limiting of the claims of the invention.
In the present embodiment, as shown in fig. 1 to 3, a gallium boat reactor for maintaining the steady pre-reaction rate of an HVPE reactor by buoyancy force comprises a chamber 100 for holding gallium metal 103 and a movable cover plate 200 which is arranged in the chamber 100 and floats above the gallium metal liquid surface by means of the buoyancy force of the gallium metal.
In this embodiment, the chamber 100 for containing gallium metal is a cylindrical quartz barrel with an inner diameter of 150mm and a height of 60mm, and the thickness of the barrel wall of the quartz barrel is 6mm. The inner space of the quartz barrel is used for storing a gallium source. Two circular channels with an outer diameter of 10mm and an inner diameter of 6mm are symmetrically arranged above the quartz barrel, and are respectively an air inlet channel 101 and an air outlet channel 102.
In this embodiment, referring to fig. 1-3, a movable cover 200 floating above the gallium metal liquid surface by means of the buoyancy of the gallium metal is made of quartz material, and the movable cover 200 includes a top cover 201 and a side wall 202 forming a gas path channel together with the top cover 201. The hollow part in the top cover 201 is provided with a channel of an air inlet hole and an air outlet hole, the air inlet hole corresponds to the air inlet channel 101, and the air outlet hole corresponds to the air outlet channel 102. The top cover 201 is composed of a circular bottom plate 2011 and a flow limiting wall 2012 arranged on the circular bottom plate 2011, the flow limiting wall 2012 is annular, and the flow limiting wall 2012 surrounds the inner diameter of the chamber, the air inlet hole and the air outlet hole to form a closed loop so as to prevent the air of the air inlet hole and the air outlet hole from being directly communicated. Wherein the diameter of the circular bottom plate 2011 is 150mm and the thickness is 2mm; the restrictor wall 2012 has an outer diameter of 150mm, an inner diameter of 146mm and a height of 18mm; the height of the entire top cover 201 is 20mm.
In this embodiment, the number of the side walls 202 is three, and the side walls 202 are bar-shaped quartz blocks with a width of 100mm, a height of 25mm, and a thickness of 2 mm. The side wall 202 divides the gas path into four sections and is communicated with each other, so that the gas of the gas inlet hole fully reacts with gallium metal after being folded back and flows out of the gas outlet hole. A base 203 is arranged below the side wall 202, the base 203 is a strip-shaped quartz block with the width of 100mm, the height of 5mm and the thickness of 20mm, and the base 203 is submerged in the gallium metal 103 and is used for increasing the height of the buoyancy control gas path channel.
In this embodiment, the chamber 100 for containing gallium metal is not in communication with the movable cover 200 floating above the gallium metal liquid surface by means of the buoyancy of gallium metal, so that the movable cover 200 floating above the gallium metal liquid surface by means of the buoyancy of gallium metal can move up and down along with the gallium metal liquid surface as the gallium metal is consumed. Because the weight of the movable cover plate 200 and the volume of the bottom base 203 positioned in the gallium metal are fixed, the buoyancy is fixed, so that the volume of the gas path channel formed by the side wall 202 and the top cover 201 is fixed, the liquid level of the gallium metal 103 is ensured to be lowered, but the pre-reaction channel is fixed, and the pre-reaction is realized without changing along with the consumption of the gallium metal.
In this embodiment, the gas inlet channel 101 and the gas outlet channel 102 of the chamber 100 for containing gallium metal respectively extend into the cylindrical quartz barrel by 20mm, and the gas inlet channel 101 and the gas outlet channel 102 are wrapped above the top cover 201 of the movable cover plate 200 which floats above the gallium metal liquid level by means of the buoyancy of gallium metal, so that the gas inlet channel 101 and the gas outlet channel 102 are not directly communicated in the process that the movable cover plate 200 descends along with the gallium metal liquid level, and the reaction gas always flows through the gas path channel of the gallium metal liquid level and then flows out of the outlet.
In other embodiments, the inner diameter and height of the chamber 100, the thickness of the wall of the chamber 100, the aperture of the air inlet channel 101, the aperture of the air outlet channel 102, the depth of the air inlet channel 101 and the air outlet channel 102 into the chamber, the diameter and thickness of the circular bottom plate 2011, the inner diameter and height of the restrictor wall 2012, the width, height and thickness of the side wall 202, and the width, height and thickness of the base 203 can be designed and adjusted according to practical requirements.
In other embodiments, the sidewall 202 may also be helical.
In other embodiments, the material of the chamber 100 may also be silicon carbide ceramic or aluminum nitride ceramic, the shape of the chamber including, but not limited to, a cylinder and a cuboid. The material of the movable cover plate can also be silicon carbide ceramic or aluminum nitride ceramic.
The gallium boat reactor is applied to a pre-reaction zone of an HVPE reaction furnace.
Those skilled in the art can also make appropriate changes and modifications to the above-described embodiments in light of the above disclosure of the present invention. Therefore, the invention is not limited to the specific embodiments disclosed and described above, but some modifications and changes of the invention should be also included in the scope of the claims of the invention. In addition, although specific terms are used in the present specification, these terms are for convenience of description only and do not limit the present invention in any way.
Claims (10)
1. A gallium boat reactor for maintaining stable pre-reaction rate of an HVPE reaction furnace by utilizing buoyancy is characterized in that: comprises a chamber for containing gallium metal and a movable cover plate which is arranged in the chamber and floats above the gallium metal liquid level by means of the buoyancy of the gallium metal.
2. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 1, wherein: the chamber comprises an air inlet channel, an air outlet channel and a gallium source storage area.
3. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 2, wherein: the movable cover plate comprises a top cover and a side wall which forms an air passage together with the top cover, and a base is arranged below the side wall.
4. A gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 3, wherein: the gas inlet channel and the gas outlet channel penetrate into the cavity, and the gas inlet channel and the gas outlet channel are wrapped above the top cover of the movable cover plate which floats above the gallium metal liquid level by means of gallium metal buoyancy, so that the gas inlet channel and the gas outlet channel are not directly communicated in the process that the movable cover plate descends along with the gallium metal liquid level, and reaction gas flows out from the outlet after flowing through the gas path channel of the gallium metal liquid level.
5. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 4, wherein: the top cover is provided with an air inlet hole and an air outlet hole, the air inlet hole corresponds to the air inlet channel, and the air outlet hole corresponds to the air outlet channel.
6. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 5, wherein: the cavity is a columnar barrel with the inner diameter of 20-1000 mm and the height of 20-500 mm, and the thickness of the barrel wall of the columnar barrel is 1-20 mm; the aperture of the air inlet channel is 1-400 mm, the aperture of the air outlet channel is 1-400 mm, the wall thickness of the air inlet channel and the air outlet channel is 1-10 mm, and the length of the air inlet channel and the air outlet channel penetrating into the cavity is 8-200 mm.
7. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 6, wherein: the top cover consists of a circular bottom plate and flow limiting walls arranged on the circular bottom plate, the number of the side walls is N, N is any integer between 3 and 9, the side walls are strip-shaped or spiral, the side walls divide the gas path into N+1 sections and are communicated with each other, and gas of the gas inlet hole fully reacts with gallium metal after being folded back and flows out of the gas outlet hole.
8. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to claim 7, wherein: the thickness of the circular bottom plate is 1-10 mm, and the diameter is 20-1000 mm; the flow limiting wall is annular and forms a closed loop around the inner diameter of the cavity, the air inlet hole and the air outlet hole; the outer diameter of the flow-limiting wall is the same as that of the circular bottom plate, the thickness of the flow-limiting wall is 1-10 mm, and the height of the flow-limiting wall is 1-100 mm; the width of the side wall is 10-900 mm, the height is 5-400 mm, and the thickness is 1-20 mm; the base is 10-900 mm in width, 1-100 mm in height and 1-100 mm in thickness.
9. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to any one of claims 1 to 8, wherein: the material of the chamber is quartz, silicon carbide ceramic or aluminum nitride ceramic.
10. The gallium boat reactor for maintaining steady pre-reaction rate of HVPE reactor by buoyancy according to any one of claims 1 to 8, wherein: the movable cover plate is made of quartz, silicon carbide ceramic or aluminum nitride ceramic.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310253893X | 2023-03-15 | ||
| CN202310253893.XA CN116334750A (en) | 2023-03-15 | 2023-03-15 | Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy |
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| Publication Number | Publication Date |
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| CN117328144A true CN117328144A (en) | 2024-01-02 |
| CN117328144B CN117328144B (en) | 2024-03-29 |
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| CN202310253893.XA Withdrawn CN116334750A (en) | 2023-03-15 | 2023-03-15 | Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy |
| CN202311149602.9A Active CN117328144B (en) | 2023-03-15 | 2023-09-06 | Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy |
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| CN116334750A (en) * | 2023-03-15 | 2023-06-27 | 北京大学东莞光电研究院 | Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
| CN102560431A (en) * | 2010-12-21 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Metal organic chemical vapor deposition device and chamber assembly thereof |
| CN103882515A (en) * | 2012-12-24 | 2014-06-25 | 刘祥林 | Hydride vapour phase epitaxy equipment |
| CN204714948U (en) * | 2015-05-26 | 2015-10-21 | 北京大学东莞光电研究院 | A kind of GaN crystal growing apparatus |
| CN116334750A (en) * | 2023-03-15 | 2023-06-27 | 北京大学东莞光电研究院 | Gallium boat reactor for maintaining steady pre-reaction rate of HVPE reaction furnace by utilizing buoyancy |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107012503A (en) * | 2017-06-01 | 2017-08-04 | 镓特半导体科技（上海）有限公司 | A kind of stable gallium source reactor |
| JP2019087616A (en) * | 2017-11-06 | 2019-06-06 | パナソニックＩｐマネジメント株式会社 | Nitride semiconductor manufacturing apparatus and manufacturing method |
| CN207877925U (en) * | 2018-01-19 | 2018-09-18 | 东莞市中镓半导体科技有限公司 | A kind of hydride gas-phase epitaxy reaction gallium boat structure |
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2023
- 2023-03-15 CN CN202310253893.XA patent/CN116334750A/en not_active Withdrawn
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| CN116334750A (en) | 2023-06-27 |
| CN117328144B (en) | 2024-03-29 |
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