CN117325069A - Device of gas-assisted polishing system and application method thereof - Google Patents
Device of gas-assisted polishing system and application method thereof Download PDFInfo
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- CN117325069A CN117325069A CN202311497643.7A CN202311497643A CN117325069A CN 117325069 A CN117325069 A CN 117325069A CN 202311497643 A CN202311497643 A CN 202311497643A CN 117325069 A CN117325069 A CN 117325069A
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- 238000005498 polishing Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 75
- 230000007246 mechanism Effects 0.000 claims abstract description 69
- 239000000243 solution Substances 0.000 claims abstract description 33
- 239000012528 membrane Substances 0.000 claims abstract description 25
- 238000004090 dissolution Methods 0.000 claims abstract description 21
- 239000002101 nanobubble Substances 0.000 claims abstract description 14
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 8
- 238000009423 ventilation Methods 0.000 claims abstract description 7
- 238000002347 injection Methods 0.000 claims abstract description 6
- 239000007924 injection Substances 0.000 claims abstract description 6
- 239000002002 slurry Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 99
- 230000001105 regulatory effect Effects 0.000 claims description 38
- 230000002572 peristaltic effect Effects 0.000 claims description 36
- 238000003756 stirring Methods 0.000 claims description 34
- 238000002156 mixing Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 14
- 238000011049 filling Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003760 magnetic stirring Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
- B24B31/10—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor involving other means for tumbling of work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
- B24B31/12—Accessories; Protective equipment or safety devices; Installations for exhaustion of dust or for sound absorption specially adapted for machines covered by group B24B31/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The invention belongs to the technical field of gas-assisted polishing, and provides a device of a gas-assisted polishing system and a use method thereof, wherein the device comprises a support frame, the top end of the support frame is fixedly connected with a support plate, the outer side wall of the support plate is provided with an instrument panel, a pressurizing mechanism is arranged at the top end of the support frame, and the pressurizing mechanism also comprises a water injection mechanism and a ventilation mechanism; the invention prepares the gas supersaturated solution by utilizing the hydrophobic membrane contact system, the whole CMP system is accommodated in a sealed pressure tank, the deviation between the gas dissolution amount in the gas supersaturated solution and the air contact of the solution in the atmospheric environment can be avoided, the pressure in the polishing tank can be changed in the polishing process, the production efficiency can be greatly increased in industry, the invention is possibly applicable to all slurries by a nano-bubble auxiliary method, and the bubbles can exist in water stably for a longer time than normal millimeter or submillimeter bubbles.
Description
Technical Field
The invention belongs to the technical field of gas-assisted polishing, and particularly relates to a device of a gas-assisted polishing system and a use method thereof.
Background
In the early 21 st century, CMP technology was developed rapidly as the sole global planarization technology for lapping and polishing, CMP technology, that is, chemical mechanical polishing, has been developed on the basis of both chemical polishing technology and mechanical polishing technology, and is a polishing technology combining the physical polishing action of a polisher with the chemical reaction action of polishing liquid, which forms a smooth and flat surface on the surface of a workpiece through the micro abrasive grinding action of an abrasive and the chemical corrosion action of the polishing liquid, has become the main technology for processing semiconductors in various industries nowadays, and research reports on chemical mechanical polishing are mainly focused on the polishing process. In the selection of the abrasive, silicon dioxide is generally selected as the abrasive, and the abrasive most commonly used in the chemical mechanical polishing process is also silicon dioxide;
the existing CMP polishing process is influenced by various factors, various parameters of polishing solution and pressure in a tank are also one of important influencing factors, the main component of the polishing solution adopted in the laboratory at present is S iO2 removal slurry, and the selected gases are oxidizing gas O2, reducing gas H2, inert gas N2 and acid gas CO2 with the purity of 99.999 percent so as to explore the characteristics of micro-nano bubbles generated subsequently.
To this end, one skilled in the art proposes an apparatus for a gas-assisted polishing system and a method for using the same to solve the problems addressed by the background art.
Disclosure of Invention
In order to solve the technical problems, the invention provides a device of a gas-assisted polishing system and a use method thereof, which are used for solving the problems that the polishing process is influenced by various factors, various parameters of polishing solution, pressure in a tank and the like in the prior art.
The device of the gas-assisted polishing system and the using method thereof comprise a supporting frame, wherein the top end of the supporting frame is fixedly connected with a supporting plate, and the outer side wall of the supporting plate is provided with an instrument panel;
the pressurizing mechanism is arranged at the top end of the supporting frame and further comprises a water injection mechanism and a ventilation mechanism;
the polishing mechanism is arranged at the bottom end of the supporting frame and further comprises a detection mechanism;
the mixing mechanism is arranged at the bottom end of the supporting frame and further comprises a first peristaltic pump and a monitoring mechanism, and the first peristaltic pump is arranged at the top end of the mixing mechanism.
Preferably, the pressurizing mechanism comprises a film inlet air pressure regulating valve, the film inlet air pressure regulating valve is arranged at the top end of the supporting frame, the ventilation mechanism comprises an air filling cylinder, the air filling cylinder is arranged on the outer side wall of the supporting frame, the air filling cylinder is fixedly connected with a plurality of air distribution pipes, the air distribution pipes are arranged on the top ends of the air distribution pipes, the air inlet pipe is arranged on the outer side wall of the air distribution pipes, the other end of the air inlet pipe is arranged on the outer side wall of the film inlet air pressure regulating valve, and the air outlet pipe is arranged at one end, far away from the air inlet pipe, of the film inlet air pressure regulating valve.
Preferably, the water injection mechanism comprises a water inlet pipe, the water inlet pipe is arranged at one end of the membrane inlet air pressure regulating valve, which is far away from the air inlet pipe, the water suction pump is arranged on the outer side wall of the water inlet pipe, the flowmeter is arranged at the top end of the water inlet pipe, the water pressure regulating valve is arranged at the top end of the water inlet pipe, and the water outlet pipe is arranged at one end of the membrane inlet air pressure regulating valve, which is far away from the water inlet pipe.
Preferably, the mixing mechanism is arranged at the bottom end of the supporting frame, the mixing mechanism comprises a first peristaltic pump, the first peristaltic pump is arranged at the bottom end of the water outlet pipe, and the bottom end of the first peristaltic pump is provided with the stirring tank.
Preferably, the monitoring mechanism is arranged on the outer side wall of the mixing mechanism, the monitoring mechanism comprises a dissolution PH change detector, the dissolution PH change detector is arranged on the top end of the stirring tank, a second peristaltic pump is arranged on the outer side wall of the stirring tank, a running water meter is arranged on the top end of the second peristaltic pump, an adjusting valve is arranged on the outer side wall of the second peristaltic pump, and a magnetic stirrer is arranged at the bottom end of the stirring tank.
Preferably, the polishing mechanism comprises a polishing device and an airtight polishing machine, wherein the airtight polishing machine is arranged at one end of the second peristaltic pump far away from the stirring tank, and the polishing device is arranged at the bottom end of the airtight polishing machine.
Preferably, the detection mechanism is installed on the top end of the airtight polishing machine, the detection mechanism comprises a PH sensor, an oxygen dissolving meter sensor and a liquid level meter, the PH sensor is installed on the top end of the airtight polishing machine, the oxygen dissolving meter sensor is installed on the top end of the airtight polishing machine, and the liquid level meter is installed on the top end of the airtight polishing machine.
Preferably, S1, the pressurizing mechanism pressurizes the gas, the gas is filtered by a filter screen in a membrane inlet air pressure regulating valve and then is injected into a hydrophobic membrane contact system together with plasma water through a flowmeter 26 and a water pressure regulating valve 27 to generate gas supersaturated solution, the gas is transmitted to a stirring tank through a membrane outlet pressure valve by using a first peristaltic pump, and the pressurized gas is fully contacted with polishing solution through the stirring tank, so that the contact time of the added gas and the polishing solution is prolonged, and thus, larger dissolution and better abrasive dispersion are obtained;
s2, enabling the gas supersaturated solution to enter a stirring tank through a first peristaltic pump, and stirring through a magnetic stirrer in the tank body to generate a large number of bubbles so as to improve the gas-liquid contact area and further obtain higher gas dissolution;
s3, pressurizing the gas by the pressurizing mechanism, filtering the gas by a filter screen of a membrane inlet air pressure regulating valve, injecting the gas and plasma water into a hydrophobic membrane contact system together by a flowmeter and a water pressure regulating valve, forming a gas supersaturated solution by increasing the contact area between the gas and the liquid, allowing the gas to enter the water through a membrane hole, allowing some of the gas to be quickly dissolved in the water, allowing some of the gas to remain in the water in the form of nano bubbles, and gradually shrinking the nano bubbles until the nano bubbles are completely dissolved in the water to form the gas supersaturated solution.
Preferably, S4, agitator tank is made by one of three zero four stainless steel, has good corrosion resistance and heat conductivity, is equipped with PH sensor, dissolved oxygen appearance sensor, dissolved volume PH change detector simultaneously at jar body top with real-time supervision jar internal gas-liquid capacity change and PH value signal, and then can make things convenient for the measurement of experimental data according to its real-time numerical value.
Preferably, S5, the airtight polishing machine adjusts the composition and pressure of the gas in the closed chamber so as to increase the chemical reaction capacity of the slurry, the polishing disc rotates anticlockwise according to the set rotating speed, the carrying disc can rotate clockwise or anticlockwise according to the set rotating speed and direction, the pressure is loaded at multiple points, and the pressure is controlled and adjusted through the throttle valve.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention prepares the gas supersaturated solution by utilizing the hydrophobic membrane contact system, and the whole CMP system is accommodated in the sealed pressure tank, so that deviation between the gas dissolution amount in the gas supersaturated solution and the contact of the solution with air in the atmospheric environment can be avoided, the pressure in the polishing tank can be changed in the polishing process, and the production efficiency can be greatly improved in industry.
2. The invention is possible to be applied to all sizing agents by a nano bubble auxiliary method, and the bubbles can exist in water stably for a longer time than normal millimeter or submillimeter bubbles, so that micro-nano bubbles generated in situ in the polishing process have good cleaning effect, in addition, free radicals generated after the micro-nano bubbles are broken can simultaneously modify the surfaces of a wafer and a bonding pad, the chemical reaction between the wafer and an abrasive is promoted by the improvement of the adsorption force between the wafer and the abrasive, and after conditioning, the floor pad has relatively coarse and relatively clean mechanical effect.
3. According to the invention, the stirring tank and the airtight grinding polisher are matched for use, feeding and processing can be simultaneously carried out, the stirring tank is continuously rotated during working, liquid abrasive and gas saturated solution are stirred, abrasive precipitation can be effectively prevented, uniform feeding can be realized, the abrasive on the surface of a sample is uniformly distributed during sample grinding, and the grinding quality of the surface of the sample is greatly improved.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic view of the hermetic polisher and agitator tank of FIG. 1 of the present invention;
FIG. 3 is a schematic cross-sectional view of the airtight polishing machine and polishing apparatus of FIG. 1 according to the present invention;
FIG. 4 is a schematic illustration of the mixing mechanism of FIG. 2 according to the present invention;
FIG. 5 is a schematic diagram of the front cross-sectional structure of the intake air pressure regulating valve of FIG. 1 according to the present invention.
In the figure: 1. a support frame; 11. a support plate; 12. a dashboard; 13. a film inlet air pressure regulating valve; 2. filling the inflator; 21. a gas distribution pipe; 22. a gas dividing valve; 23. an air inlet pipe; 24. a water inlet pipe; 25. a water pump; 26. a flow meter; 27. a water pressure regulating valve; 28. an air outlet pipe; 29. a water outlet pipe; 3. a first peristaltic pump; 31. a stirring tank; 32. polishing and grinding device; 33. a PH sensor; 34. an oxygen dissolving meter sensor; 35. a dissolution amount PH change detector; 36. a second peristaltic pump; 37. a running water meter; 38. adjusting a valve; 39. an airtight polishing machine; 310. a level gauge.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings and examples. The following examples are illustrative of the invention but are not intended to limit the scope of the invention.
As shown in fig. 1 to 5:
embodiment one: the invention provides a device of a gas auxiliary polishing system and a use method thereof, comprising a support frame 1, wherein the top end of the support frame 1 is fixedly connected with a support plate 11, and the outer side wall of the support plate 11 is provided with an instrument panel 12;
the pressurizing mechanism is arranged at the top end of the supporting frame 1 and further comprises a water injection mechanism and a ventilation mechanism;
the polishing mechanism is arranged at the bottom end of the supporting frame 1 and further comprises a detection mechanism;
the mixing mechanism is arranged at the bottom end of the supporting frame 1, the mixing mechanism further comprises a first peristaltic pump 3 and a monitoring mechanism, the first peristaltic pump 3 is arranged at the top end of the mixing mechanism, the pressurizing mechanism comprises a film inlet air pressure regulating valve 13, the film inlet air pressure regulating valve 13 is arranged at the top end of the supporting frame 1, the ventilation mechanism comprises a gas filling cylinder 2, the gas filling cylinder 2 is a plurality of gas distribution pipes 21 which are arranged on the outer side wall of the supporting frame 1, the top ends of the gas filling cylinders 2 are fixedly connected with a plurality of gas distribution pipes 21, the top ends of the gas distribution pipes 21 are provided with a plurality of gas distribution valves 22, the outer side wall of the gas distribution pipes 21 is provided with a gas inlet pipe 23, the other end of the gas inlet pipe 23 is arranged on the outer side wall of the film inlet air pressure regulating valve 13, one end of the film inlet air pressure regulating valve 13, which is far away from the gas inlet pipe 23, is provided with a gas outlet pipe 28, the water filling mechanism comprises a water inlet pipe 24, the water inlet pipe 24 is arranged at one end of the water inlet pipe 24 far away from the air inlet pipe 23, the water suction pump 25 is arranged on the outer side wall of the water inlet pipe 24, the flowmeter 26 is arranged at the top end of the water inlet pipe 24, the water pressure regulating valve 27 is arranged at the top end of the water inlet pipe 24, the water outlet pipe 29 is arranged at one end of the water inlet pipe 13 far away from the water inlet pipe 24, the mixing mechanism is arranged at the bottom end of the supporting frame 1 and comprises a first peristaltic pump 3, the first peristaltic pump 3 is arranged at the bottom end of the water outlet pipe 29, the bottom end of the first peristaltic pump 3 is provided with the stirring tank 31, the monitoring mechanism is arranged on the outer side wall of the mixing mechanism and comprises a dissolution PH change detector 35, the dissolution PH change detector 35 is arranged at the top end of the stirring tank 31, the outer side wall of the stirring tank 31 is provided with a second peristaltic pump 36, the running water counter 37 is installed on the top of second peristaltic pump 36, governing valve 38 is installed to the lateral wall of second peristaltic pump 36, magnetic stirrer is installed to the bottom of agitator tank 31, polishing mechanism includes polishing device 32, airtight burnishing machine 39 is installed in the one end that second peristaltic pump 36 kept away from agitator tank 31, polishing device 32 installs the bottom at airtight burnishing machine 39, detection mechanism installs the top at airtight burnishing machine 39, detection mechanism includes PH sensor 33, oxygen dissolving meter sensor 34, level gauge 310, PH sensor 33 installs the top at airtight burnishing machine 39, oxygen dissolving meter sensor 34 installs the top at airtight burnishing machine 39, level gauge 310 installs the top at airtight burnishing machine 39.
S1, pressurizing gas by the pressurizing mechanism, filtering the gas by a filter screen in a membrane inlet air pressure regulating valve 13, injecting plasma water into a hydrophobic membrane contact system together by a water flow meter 26 and a water pressure regulating valve 27 to generate gas supersaturated solution, transmitting the gas to a stirring tank 31 by using a first peristaltic pump 3 through a membrane outlet pressure valve, and fully contacting the pressurized gas with polishing solution by the stirring tank 31 to increase the contact time of the added gas and the polishing solution, thereby obtaining larger dissolution and better abrasive dispersion;
s2, enabling the gas supersaturated solution to enter a stirring tank 31 through a first peristaltic pump 3, stirring through a magnetic stirrer in the tank body to generate a large amount of bubbles so as to improve the gas-liquid contact area and further obtain higher gas dissolution, installing a magnetic stirring device at the bottom of the stirring tank 31, and stirring polishing solution in the stirring tank 31 through a magnetic field generated by the magnetic force generator by the stirrer in a working state so as to obtain larger contact area in unit time and further greatly improve the dissolution of the gas;
s3, pressurizing the gas by a pressurizing mechanism, filtering by a filter screen of a membrane inlet air pressure regulating valve 13, injecting the gas and plasma water into a hydrophobic membrane contact system together by a flowmeter 26 and a water pressure regulating valve 27, forming a gas supersaturated solution by increasing the contact area between the gas and the liquid, allowing the gas to enter the water through a membrane hole, allowing some of the gas to quickly dissolve in the water, allowing some of the gas to remain in the water in the form of nano bubbles, and gradually shrinking the nano bubbles until the nano bubbles are completely dissolved in the water to form the gas supersaturated solution;
the gas concentration and bubble diameter calculation formula is:
wherein: p is the gas pressure, P l Is the liquid pressure, σ is the surface tension, and r is the bubble radius. In addition, according to henry's law;
s4, the stirring tank 31 is made of one of three-zero and four-stainless steel, has good corrosion resistance and heat conductivity, and is provided with a PH sensor 33, an oxygen dissolving meter sensor 34 and a dissolution PH change detector 35 at the top of the tank body so as to monitor the gas-liquid capacity change and PH value signals in the tank body in real time, so that the measurement of experimental data can be facilitated according to the real-time numerical value;
s5, regulating the composition and pressure of the gas in the closed chamber by the airtight polishing machine 39 to increase the chemical reaction capacity of the slurry, rotating the polishing disc anticlockwise according to a set rotating speed, rotating the carrying disc clockwise or anticlockwise according to the set rotating speed and direction, loading the pressure at multiple points, and controlling and regulating the pressure by the throttle valve;
generating gas supersaturated solution, transmitting the gas supersaturated solution into a stirring tank 31 by using a first peristaltic pump 3 through a membrane outlet pressure valve, and fully contacting the gas supersaturated solution with polishing solution through a magnetic stirring device so as to prolong the contact time of the gas and the polishing solution, thereby obtaining larger dissolution, wherein the dissolution change calculation formula is as follows:
Q＝μ·K·A·Δt
wherein: q is the dissolution amount; μ is the vibration frequency; k is the stirring rate; Δt is the processing time; a is the gas-liquid contact area per unit time.
While embodiments of the present invention have been shown and described above for purposes of illustration and description, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives, and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (10)
1. An apparatus for a gas-assisted polishing system and method of use thereof, comprising: the device comprises a support frame (1), wherein the top end of the support frame (1) is fixedly connected with a support plate (11), and an instrument panel (12) is arranged on the outer side wall of the support plate (11);
the pressurizing mechanism is arranged at the top end of the supporting frame (1), and the pressurizing mechanism also comprises a water injection mechanism and a ventilation mechanism;
the polishing mechanism is arranged at the bottom end of the supporting frame (1), and the polishing mechanism further comprises a detection mechanism;
the mixing mechanism is arranged at the bottom end of the supporting frame (1), the mixing mechanism further comprises a first peristaltic pump (3) and a monitoring mechanism, and the first peristaltic pump (3) is arranged at the top end of the mixing mechanism.
2. The apparatus for a gas-assisted polishing system and method of use thereof as recited in claim 1, wherein: the utility model provides a pressure mechanism includes intake air pressure regulating valve (13), intake air pressure regulating valve (13) install the top at support frame (1), ventilation mechanism includes air filling tube (2), air filling tube (2) are a plurality of lateral walls of installing at support frame (1), a plurality of top fixedly connected with of air filling tube (2) a plurality of minute pipes (21), a plurality of divide the top of air pipe (21) to install a plurality of minute valve (22), a plurality of intake pipe (23) are installed to the lateral wall of minute pipe (21), the lateral wall at intake air pressure regulating valve (13) is installed to the other end of intake pipe (23), outlet duct (28) are installed to the one end that intake air pressure regulating valve (13) kept away from intake pipe (23).
3. The apparatus for a gas-assisted polishing system and method of use thereof as recited in claim 1, wherein: the water injection mechanism comprises a water inlet pipe (24), the water inlet pipe (24) is arranged at one end of the membrane inlet air pressure regulating valve (13) far away from the air inlet pipe (23), a water suction pump (25) is arranged on the outer side wall of the water inlet pipe (24), a flow meter (26) is arranged at the top end of the water inlet pipe (24), a water pressure regulating valve (27) is arranged at the top end of the water inlet pipe (24), and a water outlet pipe (29) is arranged at one end of the membrane inlet air pressure regulating valve (13) far away from the water inlet pipe (24).
4. The apparatus for a gas-assisted polishing system and method of use thereof as recited in claim 1, wherein: the mixing mechanism is arranged at the bottom end of the supporting frame (1), the mixing mechanism comprises a first peristaltic pump (3), the first peristaltic pump (3) is arranged at the bottom end of the water outlet pipe (29), and the bottom end of the first peristaltic pump (3) is provided with a stirring tank (31).
5. The apparatus for a gas-assisted polishing system and method of use thereof as recited in claim 1, wherein: the monitoring mechanism is arranged on the outer side wall of the mixing mechanism and comprises a dissolution PH change detector (35), the dissolution PH change detector (35) is arranged at the top end of the stirring tank (31), the outer side wall of the stirring tank (31) is provided with a second peristaltic pump (36), the top of second peristaltic pump (36) is installed flowing water counter (37), governing valve (38) are installed to the lateral wall of second peristaltic pump (36), magnetic stirrer is installed to the bottom of agitator tank (31).
6. The apparatus for a gas-assisted polishing system and method of using the same as recited in claim 5, wherein: the polishing mechanism comprises a polishing device (32) and an airtight polishing machine (39), wherein the airtight polishing machine (39) is arranged at one end, far away from the stirring tank (31), of the second peristaltic pump (36), and the polishing device (32) is arranged at the bottom end of the airtight polishing machine (39).
7. The apparatus for a gas-assisted polishing system and method of use thereof as recited in claim 1, wherein: the utility model discloses a polishing machine, including polishing device (32), detection mechanism installs the top at polishing device (32), detection mechanism includes PH sensor (33), dissolved oxygen meter sensor (34), level gauge (310), the top at airtight burnishing machine (39) is installed to PH sensor (33), the top at airtight burnishing machine (39) is installed to dissolved oxygen meter sensor (34), the top at airtight burnishing machine (39) is installed to level gauge (310).
8. A gas assisted polishing system apparatus and method of use according to any one of claims 1 or 7, wherein: the method comprises the steps of S1, pressurizing gas by the pressurizing mechanism, filtering the gas by a filter screen in a membrane inlet air pressure regulating valve (13), injecting plasma water into a hydrophobic membrane contact system together by a water flow meter (26) and a water pressure regulating valve (27) to generate a gas supersaturated solution, transmitting the gas into a stirring tank (31) by a first peristaltic pump (3) through a membrane outlet pressure valve, and fully contacting the pressurized gas with polishing solution by the stirring tank (31) to increase the contact time of the added gas and the polishing solution, thereby obtaining larger dissolution and better abrasive dispersion;
s2, enabling the gas supersaturated solution to enter a stirring tank (31) through a first peristaltic pump (3), and stirring through a magnetic stirrer in the tank body to generate a large number of bubbles so as to improve the gas-liquid contact area and further obtain higher gas dissolution;
s3, pressurizing the gas by a pressurizing mechanism, filtering the gas by a filter screen of a membrane inlet air pressure regulating valve (13), injecting the gas and plasma water into a hydrophobic membrane contact system together by a flowmeter (26) and a water pressure regulating valve (27), forming a gas supersaturated solution by increasing the contact area between the gas and the liquid, allowing the gas to enter the water through a membrane hole, allowing some of the gas to quickly dissolve in the water, allowing some of the gas to remain in the water in the form of nano bubbles, and gradually shrinking the nano bubbles until the nano bubbles are completely dissolved in the water to form the gas supersaturated solution.
9. The apparatus for a gas-assisted polishing system and method of using the same as recited in claim 4, wherein: s4, the stirring tank (31) is made of one of three-zero and four-stainless steel, has good corrosion resistance and heat conductivity, and is provided with a PH sensor (33), an oxygen dissolving meter sensor (34) and a dissolution PH change detector (35) at the top of the tank body so as to monitor the gas-liquid capacity change and PH value signals in the tank body in real time, and further can facilitate measurement of experimental data according to real-time numerical values.
10. The apparatus for a gas-assisted polishing system and method of using the same as recited in claim 6, wherein: s5, regulating the composition and pressure of the gas in the closed chamber by the airtight polishing machine (39) so as to increase the chemical reaction capacity of the slurry, rotating the polishing disc anticlockwise according to a set rotating speed, rotating the carrying disc clockwise or anticlockwise according to the set rotating speed and direction, loading the pressure at multiple points, and controlling and regulating the pressure by the throttle valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311497643.7A CN117325069A (en) | 2023-11-11 | 2023-11-11 | Device of gas-assisted polishing system and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311497643.7A CN117325069A (en) | 2023-11-11 | 2023-11-11 | Device of gas-assisted polishing system and application method thereof |
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| CN202311497643.7A Pending CN117325069A (en) | 2023-11-11 | 2023-11-11 | Device of gas-assisted polishing system and application method thereof |
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