CN117317812A - VCSEL laser chip integrating scanning and focusing - Google Patents
VCSEL laser chip integrating scanning and focusing Download PDFInfo
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- CN117317812A CN117317812A CN202311251421.7A CN202311251421A CN117317812A CN 117317812 A CN117317812 A CN 117317812A CN 202311251421 A CN202311251421 A CN 202311251421A CN 117317812 A CN117317812 A CN 117317812A
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- scanning
- vcsel laser
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- focusing
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- LFEUVBZXUFMACD-UHFFFAOYSA-H lead(2+);trioxido(oxo)-$l^{5}-arsane Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O LFEUVBZXUFMACD-UHFFFAOYSA-H 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 230000017525 heat dissipation Effects 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 230000001795 light effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 9
- 230000001427 coherent effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a VCSEL laser chip integrating scanning and focusing, which comprises: a substrate, wherein the VCSEL laser array is provided with M multiplied by N light emitting units and welded on the surface of the substrate; m multiplied by N MEMS micro turning mirrors are positioned above the VCSEL laser array and are in one-to-one correspondence with the light emitting units; m multiplied by N reflecting mirrors are opposite to the light emergent surface of the MEMS micro rotating mirror and are in one-to-one correspondence with the MEMS micro rotating mirror; the Talbot outer cavity mirror is positioned above the MEMS micro-rotating mirror and the reflecting mirror, and the grating is attached to the upper surface of the Talbot outer cavity mirror, so that the first-dimension wavelength scanning is realized; the phase control focusing lens group consists of M multiplied by N focusing lenses and is positioned above the grating, and the focusing lenses are in one-to-one correspondence with the optical axes of the reflecting mirrors, so that second-dimension phase scanning is realized. The VCSEL laser chip can realize laser array beam combination focusing scanning at the same time, increases scanning precision and scanning range, and can meet the application requirements of different scenes.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a VCSEL laser chip integrating scanning and focusing.
Background
VCSEL lasers have excellent structural characteristics and physical characteristics such as small volume, light emitting direction vertical to a substrate, easy two-dimensional integration, small threshold current, circular symmetric light spots, single longitudinal mode operation, high modulation rate and the like, and have been widely applied to the fields of real-time high-speed optical network information systems, large-scale data centers, face recognition systems, optical interconnection, optical storage, optical detection and the like.
In the laser radar of the new system, the VCSEL laser is a core laser light source for realizing optical coherent detection and scanning. Compared with a direct detection laser radar, the coherent detection laser radar has stronger anti-interference capability, higher detection precision and higher ranging speed. In addition, the coherent detection can be used for measuring the distance and the speed, can be used for measuring the distance of a target with higher relative movement speed, and has great application value.
However, for the traditional laser radar, the laser light source, the phase modulator, the scanning device and the focusing optical system in the traditional laser radar generally adopt a separated structure, so that the traditional laser radar has the disadvantages of complex mechanical structure, large volume, high cost, complex optical path debugging and short failure time. Although some laser radars today adopt MEMS galvanometer modules to realize plane scanning of laser beams, the geometrical dimensions limit the oscillation amplitude of the laser radars, and the angular rotation of the galvanometers is limited, so that the field angle of the laser radars is limited. In addition, the wavelength of the traditional laser radar is fixed and not tunable, and only phase scanning can be completed, so that the application of the VCSEL laser light source in coherent detection laser radar is limited.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides the VCSEL laser chip integrating scanning and focusing, and can realize scanning of two dimensions of wavelength and phase.
The invention discloses a VCSEL laser chip integrating scanning and focusing, which comprises:
a substrate;
the VCSEL laser array is provided with M multiplied by N light emitting units and is welded on the surface of the substrate, wherein M is more than or equal to 1, and N is more than or equal to 1;
m multiplied by N MEMS micro turning mirrors which are positioned above the VCSEL laser arrays and are in one-to-one correspondence with the light emitting units;
m multiplied by N reflecting mirrors, wherein the reflecting mirrors are opposite to the light-emitting surface of the MEMS micro-rotating mirror and are in one-to-one correspondence with the MEMS micro-rotating mirror;
the Talbot outer cavity mirror is positioned above the MEMS micro-rotating mirror and the reflecting mirror;
the grating is attached to the upper surface of the Talbot outer cavity mirror;
the phase control focusing lens group consists of M multiplied by N focusing lenses and is positioned above the grating, and the focusing lenses are in one-to-one correspondence with the optical axis centers of the reflecting mirrors.
As a further improvement of the invention, the substrate comprises a positive electrode metal contact surface, a negative electrode metal contact surface and a radiator, the radiating mode of the substrate comprises active radiating and passive radiating, the active radiating comprises air cooling radiating and liquid cooling radiating, and the passive radiating comprises natural heat conduction.
As a further improvement of the present invention, the lasing wavelength λ of the light emitting unit includes one of an ultraviolet band, a visible light band, a near infrared band and a mid-far infrared band, the light emitting mode of the light emitting unit is a surface light emitting mode or a bottom surface light emitting mode, and the periodic arrangement of the light emitting unit includes but is not limited to structures such as an orthogonal arrangement and a hexagonal arrangement, and the period is p; the light-emitting units are electrically connected in parallel, in series or in series-parallel, and are respectively connected with the positive metal contact surface and the negative metal contact surface of the substrate surface through gold wires to form an electrical conduction loop.
As a further improvement of the invention, the surface of the MEMS micro-turning mirror forms 45 degrees with the light emitting direction of the light emitting unit, and the deflection angle theta of the MEMS micro-turning mirror is controlled by an external circuit 1 Realizing the VCSEL to emitAnd (5) regulating and controlling the light emitting direction of the light unit.
As a further improvement of the present invention, the deflection angle θ 1 The adjustable range of (a) is + - (0 DEG-50 ℃).
As a further improvement of the invention, the reflecting mirror is linked with the MEMS micro-rotating mirror, so that the incident surface of the reflecting mirror is always parallel to the surface of the MEMS micro-rotating mirror; and enabling the reflected light of the reflecting mirror and the emergent light of the light-emitting unit to be parallel and perpendicular to the surface of the substrate.
As a further improvement of the invention, the thickness T of the Talbot external cavity mirror 1 The fractional order Talbot distance is satisfied;
for an orthogonally arranged VCSEL laser array, the Talbot distance satisfies Z t ＝2np 2 Lambda; for a regular hexagonal arranged VCSEL laser array, the Talbot distance satisfies Z t ＝3np 2 /2λ；
Wherein Z is t The Talbot distance is represented by n, the refractive index is represented by p, the arrangement period of the light emitting units is represented by λ, and the wavelength is represented by λ.
As a further improvement of the invention, the effective refractive index of the grating material isThe grating period Λ satisfies the bragg condition +.>m B Positive integers of =1, 2,3.. Etc., lambda is the wavelength.
As a further improvement of the invention, the deflection angle of the focusing lens is controllable, so that all laser beams emitted by the VCSEL laser array are focused at a certain position in the far field.
As a further improvement of the invention, the combined focused beam can realize the point scanning of the three-dimensional space at a certain distance from the far field.
Compared with the prior art, the invention has the beneficial effects that:
the invention can solve the problems of complex system, overlarge volume and high cost of the traditional laser scanning detection module, can realize the beam combination focusing scanning of the laser array, increases the scanning precision and the scanning range, and can meet the application requirements of different scenes.
Drawings
FIG. 1 is a schematic diagram of a VCSEL laser chip integrating scanning and focusing;
fig. 2 is a schematic diagram of the optical path adjustment of the VCSEL laser chip integrated with scanning and focusing in accordance with the present disclosure.
In the figure:
1. a substrate; 2. a VCSEL laser array; 3. MEMS micro turning mirror; 4. a reflecting mirror; 5. a Talbot external cavity mirror; 6. a grating; 7. phase control focusing lens group.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the present invention provides a VCSEL laser chip integrating scanning and focusing, comprising: the device comprises a substrate 1, a VCSEL laser array 2, an MEMS micro-rotating mirror 3, a reflecting mirror 4, a Talbot external cavity mirror 5, a grating 6 and a phase control focusing lens group 7; wherein,
the substrate 1 of the present invention is located at the bottom layer of a VCSEL laser chip, and comprises: the heat dissipation mode of the substrate 1 comprises active heat dissipation and passive heat dissipation, wherein the active heat dissipation comprises air cooling heat dissipation and liquid cooling heat dissipation, and the passive heat dissipation comprises natural heat conduction.
The VCSEL laser array 2 has M multiplied by N light emitting units and is welded on the surface of a substrate, wherein M is more than or equal to 1, and N is more than or equal to 1; the laser wavelength lambda of the light-emitting unit comprises one of ultraviolet band, visible light band, near infrared band and middle and far infrared band, the light-emitting mode of the light-emitting unit is a surface light-emitting mode or a bottom surface light-emitting mode, the periodic arrangement of the light-emitting unit comprises but is not limited to structures such as orthogonal arrangement, hexagonal arrangement and the like, and the period is p; the light emitting units are electrically connected in parallel, in series or in series-parallel, and are respectively connected with the positive metal contact surface and the negative metal contact surface on the surface of the substrate 1 through gold wires to form an electrical conduction loop.
The M multiplied by N MEMS micro turning mirrors 3 are positioned above the VCSEL laser array 2 and are in one-to-one correspondence with the light emitting units; the surface of the MEMS micro turning mirror 3 forms 45 degrees with the light emitting direction of the light emitting unit, and the deflection angle theta of the MEMS micro turning mirror 3 is controlled by an external circuit 1 The regulation and control of the light emitting direction of the VCSEL light emitting unit are realized; preferably, the deflection angle θ 1 The adjustable range of (a) is + - (0 DEG-50 ℃). As shown in fig. 2, when the deflection angle of the MEMS micro-turning mirror 3 is set to θ 1 Adjusted to theta 1 ' at the time, the emergent light L of the light-emitting unit can be 1 The deflected light generated by the MEMS micro turning mirror 3 is represented by L 2 Adjust to L 2 ’。
The M multiplied by N reflectors 4 are opposite to the light emergent surface of the MEMS micro rotating mirror 3 and are in one-to-one correspondence with the MEMS micro rotating mirror 3; wherein, the reflecting mirror 4 is linked with the MEMS micro-rotating mirror 3, namely, the reflecting mirror 4 rotates along with the rotation of the MEMS micro-rotating mirror 3, so that the incident surface of the reflecting mirror 4 is always parallel to the surface of the MEMS micro-rotating mirror 3; based on this, the reflected light of the reflecting mirror 4 and the outgoing light of the light emitting unit 1 are made parallel and perpendicular to the surface of the substrate 1, i.e., L1 and L 3 Or L 1 And L is equal to 3 ' as shown in fig. 2.
The Talbot external cavity mirror 5 is positioned above the MEMS micro-rotating mirror 3 and the reflecting mirror 4, and the thickness T of the Talbot external cavity mirror 1 The fractional order Talbot distance is satisfied; wherein, for the VCSEL laser array which is arranged in an orthogonal way, the Talbot distance meets Z t ＝2np 2 Lambda; for a regular hexagonal arranged VCSEL laser array, the Talbot distance satisfies Z t ＝3np 2 2 lambda; wherein Z is t The Talbot distance is represented by n, the refractive index is represented by p, the arrangement period of the light emitting units is represented by λ, and the wavelength is represented by λ.
The grating 6 of the invention is attached to the upper surface of the Talbot external cavity mirror 5, and the effective refractive index of the grating material is thatThe grating period Λ satisfies the Bragg condition +.>m B Positive integers of =1, 2,3. By controlling the grating, wavelength tuning is achieved, completing the first dimension wavelength scanning.
The phase control focusing lens group 7 of the invention is composed of M multiplied by N focusing lenses and is positioned above the grating 6, the focusing lenses are in one-to-one correspondence with the optical axis centers of the reflecting mirrors 4, namely, the optical axis centers of the focusing lenses are positioned right above the optical axis centers of the corresponding reflecting mirrors 4; the deflection angle of the focusing lens is controllable, so that all laser beams emitted by the VCSEL laser array 2 are focused at a certain position in the far field; meanwhile, the combined beam focusing light beam can realize the point scanning of the three-dimensional space at a certain distance from the far field. And phase control focusing lens group is used for realizing phase tuning and completing phase scanning of the second dimension.
The invention provides a preparation method of a VCSEL laser chip integrating scanning and focusing, which comprises the following steps:
step 1, preparing a substrate 1;
step 2, welding a VCSEL laser array 2 with M multiplied by N light emitting units on the light emitting surface of a substrate 1;
step 3, arranging M multiplied by N MEMS micro turning mirrors 3 on the light emitting side of the light emitting unit of the VCSEL laser array 2, wherein the MEMS micro turning mirrors 3 are in one-to-one correspondence with the light emitting units so as to realize the regulation and control of the light emitting direction of the VCSEL light emitting units;
step 4, arranging M multiplied by N reflectors 4 on the light emergent surface of the MEMS micro-turning mirror 3, wherein the reflectors 4 are in one-to-one correspondence with the MEMS micro-turning mirrors 3; wherein, the reflecting mirror 4 is linked with the MEMS micro-turning mirror 3, so that the incident surface of the reflecting mirror 4 is always parallel to the surface of the MEMS micro-turning mirror 3, and light is still emitted from the vertical substrate 1 after changing the direction based on the reflecting mirror, as shown in fig. 2;
step 5, micro turning mirror 3 and inverse MEMSA Talbot outer cavity mirror 5 is arranged above the reflector 4, and the thickness T of the Talbot outer cavity mirror is made 1 The fractional order Talbot distance is satisfied;
step 6, arranging a grating 6 on the upper surface of the Talbot outer cavity mirror 5, and enabling the grating period to meet the Bragg condition;
step 7, arranging a phase control focusing lens group 7 consisting of M multiplied by N focusing lenses above the grating, wherein the focusing lenses are in one-to-one correspondence with the optical axis centers of the reflectors, so that all laser beams emitted by the VCSEL laser array 2 are focused at a certain position in a far field; meanwhile, the combined beam focusing light beam can realize the point scanning of the three-dimensional space at a certain distance from the far field.
The invention has the advantages that:
the invention can solve the problems of complex system, overlarge volume and high cost of the traditional laser scanning detection module, can realize the beam combination focusing scanning of the laser array, increases the scanning precision and the scanning range, and can meet the application requirements of different scenes.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A VCSEL laser chip integrating scanning and focusing, comprising:
a substrate;
the VCSEL laser array is provided with M multiplied by N light emitting units and is welded on the surface of the substrate, wherein M is more than or equal to 1, and N is more than or equal to 1;
m multiplied by N MEMS micro turning mirrors which are positioned above the VCSEL laser arrays and are in one-to-one correspondence with the light emitting units;
m multiplied by N reflecting mirrors, wherein the reflecting mirrors are opposite to the light-emitting surface of the MEMS micro-rotating mirror and are in one-to-one correspondence with the MEMS micro-rotating mirror;
the Talbot outer cavity mirror is positioned above the MEMS micro-rotating mirror and the reflecting mirror;
the grating is attached to the upper surface of the Talbot outer cavity mirror;
the phase control focusing lens group consists of M multiplied by N focusing lenses and is positioned above the grating, and the focusing lenses are in one-to-one correspondence with the optical axis centers of the reflecting mirrors.
2. The VCSEL laser chip integrated with scanning focusing in claim 1, wherein the substrate comprises a positive metal contact surface, a negative metal contact surface and a heat sink, the heat dissipation of the substrate comprises active heat dissipation and passive heat dissipation, the active heat dissipation comprises not only air-cooled heat dissipation and liquid-cooled heat dissipation, and the passive heat dissipation comprises natural heat conduction.
3. The VCSEL laser chip integrated with scanning focusing as in claim 1, wherein the lasing wavelength λ of the light emitting units comprises one of an ultraviolet band, a visible band, a near infrared band and a mid-far infrared band, the light emitting units emit light in a surface light emitting manner or a bottom surface light emitting manner, and the periodic arrangements of the light emitting units include, but are not limited to, orthogonal arrangements and hexagonal arrangements; the light-emitting units are electrically connected in parallel, in series or in series-parallel, and are respectively connected with the positive metal contact surface and the negative metal contact surface of the substrate surface through gold wires to form an electrical conduction loop.
4. A VCSEL laser chip integrated with scanning focusing as in claim 1, wherein the MEMS micro-mirror is controlled by an external circuit to adjust deflection angle θ 1 So as to regulate the light emitting direction of the light emitting unit.
5. A scanning-focusing-integrated VCSEL laser chip as claimed in claim 4, characterized by a deflection angle θ 1 The adjustable range of (a) is + - (0 DEG-50 ℃).
6. The VCSEL laser chip integrated with scanning and focusing as in claim 1, wherein the mirror is coupled to the MEMS micro-mirror such that the entrance surface of the mirror is always parallel to the surface of the MEMS micro-mirror; and enabling the reflected light of the reflecting mirror and the emergent light of the light-emitting unit to be parallel and perpendicular to the surface of the substrate.
7. A scanning focused VCSEL laser chip as in claim 1, wherein the Talbot external cavity mirror has a thickness T 1 The fractional order Talbot distance is satisfied;
for an orthogonally arranged VCSEL laser array, the Talbot distance satisfies Z t ＝2np 2 Lambda; for a regular hexagonal arranged VCSEL laser array, the Talbot distance satisfies Z t ＝3np 2 /2λ；
Wherein Z is t The Talbot distance is represented by n, the refractive index is represented by p, the arrangement period of the light emitting units is represented by λ, and the wavelength is represented by λ.
8. A scanning focused VCSEL laser chip as in claim 1, wherein the grating material has an effective refractive index ofThe grating period Λ satisfies the Bragg condition +.>m B Positive integers of =1, 2,3.. Etc., lambda is the wavelength.
9. The integrated scanning and focusing VCSEL laser chip of claim 1, wherein the focusing lens has a controllable deflection angle to focus all laser beams from the VCSEL laser array at a location in the far field.
10. A scanning focused VCSEL laser chip as claimed in claim 9, wherein the combined focused beam of light effects a point scan of a three-dimensional space at a distance from the far field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311251421.7A CN117317812A (en) | 2023-09-26 | 2023-09-26 | VCSEL laser chip integrating scanning and focusing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311251421.7A CN117317812A (en) | 2023-09-26 | 2023-09-26 | VCSEL laser chip integrating scanning and focusing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117317812A true CN117317812A (en) | 2023-12-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311251421.7A Pending CN117317812A (en) | 2023-09-26 | 2023-09-26 | VCSEL laser chip integrating scanning and focusing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117317812A (en) |
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2023
- 2023-09-26 CN CN202311251421.7A patent/CN117317812A/en active Pending
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