CN117317061A - Solar cell current collector and method for producing solar cell current collector by using straight copper plating grid line - Google Patents
Solar cell current collector and method for producing solar cell current collector by using straight copper plating grid line Download PDFInfo
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- CN117317061A CN117317061A CN202311292574.6A CN202311292574A CN117317061A CN 117317061 A CN117317061 A CN 117317061A CN 202311292574 A CN202311292574 A CN 202311292574A CN 117317061 A CN117317061 A CN 117317061A
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- copper
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- solar cell
- current collector
- cell current
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 207
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 207
- 239000010949 copper Substances 0.000 title claims abstract description 207
- 238000007747 plating Methods 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 35
- 238000007650 screen-printing Methods 0.000 claims description 33
- -1 polydimethylsiloxane Polymers 0.000 claims description 32
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 26
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 26
- 229920000142 Sodium polycarboxylate Polymers 0.000 claims description 25
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 9
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 8
- 239000005751 Copper oxide Substances 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 8
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 claims description 8
- 229940116318 copper carbonate Drugs 0.000 claims description 8
- 229910000431 copper oxide Inorganic materials 0.000 claims description 8
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 claims description 8
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 claims description 8
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 claims description 8
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 6
- 229920002396 Polyurea Polymers 0.000 claims description 5
- 229920001807 Urea-formaldehyde Polymers 0.000 claims description 5
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 claims description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 5
- 239000002270 dispersing agent Substances 0.000 claims description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 4
- 239000002562 thickening agent Substances 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 3
- 229920000459 Nitrile rubber Polymers 0.000 claims description 3
- 239000000020 Nitrocellulose Substances 0.000 claims description 3
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229920002301 cellulose acetate Polymers 0.000 claims description 3
- 229920001220 nitrocellulos Polymers 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 229920001084 poly(chloroprene) Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- JYVHOGDBFNJNMR-UHFFFAOYSA-N hexane;hydrate Chemical compound O.CCCCCC JYVHOGDBFNJNMR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010023 transfer printing Methods 0.000 claims description 2
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 38
- 229910052751 metal Inorganic materials 0.000 abstract description 38
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000001259 photo etching Methods 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 87
- 229910052710 silicon Inorganic materials 0.000 description 87
- 239000010703 silicon Substances 0.000 description 87
- 238000002360 preparation method Methods 0.000 description 34
- 239000000463 material Substances 0.000 description 31
- 238000000227 grinding Methods 0.000 description 30
- 238000002156 mixing Methods 0.000 description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 22
- 239000000843 powder Substances 0.000 description 20
- 229910002804 graphite Inorganic materials 0.000 description 19
- 239000010439 graphite Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 7
- 239000006229 carbon black Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VNWKTOKETHGBQD-AKLPVKDBSA-N carbane Chemical group [15CH4] VNWKTOKETHGBQD-AKLPVKDBSA-N 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
- C23C18/1868—Radiation, e.g. UV, laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemically Coating (AREA)
Abstract
The invention discloses a solar cell current collector and a method for producing the solar cell current collector by using a straight copper plating grid line, which comprises the following steps: coating the copper-containing ink on a substrate, irradiating the substrate by a laser light source, and then placing the treated substrate in a plating solution for electroless copper plating. The method does not need photoetching operation, has the advantages of simple operation flow, less metal copper waste and high copper grid line bonding strength, and can effectively solve the problems in the prior art.
Description
Technical Field
The invention belongs to the technical field of solar cell preparation, and particularly relates to a solar cell current collector and a method for producing the solar cell current collector by using a straight copper-plated grid line.
Background
The metal grid line of the solar cell can lead the photo-generated current in the solar cell to the outside of the cell. The high-performance photovoltaic silver paste has good printing performance, and can enable the grid line on the surface of the solar cell to achieve better height-width ratio. The silver paste process can reduce the shading area of the surface of the solar cell, simultaneously reduce the internal series resistance of the cell, reduce the internal power loss of photo-generated current and effectively improve the photoelectric conversion efficiency of the photovoltaic cell. However, silver paste is expensive, increasing the cost of the solar cell.
At present, copper is used as a metal grid line for leading the photo-generated current in the solar cell to the outside of the cell, but when the copper is used for preparing the metal grid line, the whole cell is generally subjected to vacuum evaporation plating to form a conductive seed layer, then photoresist is coated on the seed layer and exposure treatment is carried out to remove the redundant seed layer, and finally the copper grid line is formed on the cell by electroplating or chemical plating. At present, there is also a report about the preparation of metal gate lines by using copper-containing ink, wherein the used copper-containing ink mainly contains nano copper, and the nano copper is melted by illumination/heating, so that conductive paths are formed among different nano copper particles, but the problem that the copper-containing ink is unstable and the bonding strength of the formed copper paths and a substrate is poor still exists.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides the solar cell current collector and the method for producing the solar cell current collector by using the straight copper-plated grid line, which do not need photoetching operation, have the advantages of simple operation flow, low grid line resistance and high copper grid line bonding strength, can effectively solve the problems in the prior art, reduce the manufacturing cost of the solar cell and improve the photoelectric conversion efficiency of the solar cell.
In order to achieve the above purpose, the technical scheme adopted by the invention for solving the technical problems is as follows:
a method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: coating the copper-containing ink on a substrate, irradiating the substrate by a laser light source, and then placing the treated substrate in a plating solution for electroless copper plating.
Further, the copper-containing ink comprises the following components in parts by weight: 30-60 parts of copper-containing laser sensitizer, 5-24 parts of thickener, 3-15 parts of adhesive, 20-30 parts of dispersing agent and 3-15 parts of light absorber.
Further, the copper-containing laser sensitizer comprises at least one of basic copper phosphate, basic copper carbonate, copper acetylacetonate, copper oxalate and copper oxide.
Further, the thickener comprises one of polydimethylsiloxane, polyurea and polytetrafluoroethylene, and the dispersing agent is one of sodium oleate, carboxylate, sulfate, sulfonate, quaternary ammonium salt, glycol, sodium polycarboxylate, acrylate and polyurethane.
Further, the binder includes one of polyvinyl alcohol, urea-formaldehyde resin, phenol-formaldehyde resin, cellulose acetate, nitrocellulose, neoprene, nitrile rubber, polyacrylate, natural latex, and low melting glass frit.
Further, the solvent of the copper-containing ink includes at least one of water, ethanol, methanol, acetone, tetrahydrofuran, dichloromethane, and cyclohexane.
Further, the particle size of the copper-containing laser sensitizer is 5-500nm.
Further, the copper-containing ink has a viscosity of 0.5 to 30 Pa.s, and the coating method comprises one of screen printing, ink printing, transfer printing and ink-jet printing.
Further, the laser wavelength is 355nm, 532nm or 1064nm, the laser power is 1-300W, the laser frequency is 10-100KHz, the laser scanning speed is 100-5000mm/s, the laser adopts a galvanometer scanning mode, the laser is controlled to directly scan line by line according to a printed circuit, the laser spot is usually 5-50 mu m in diameter, the width of a formed grid line seed layer is 5-50 mu m,
further, the thickness of the copper plating layer obtained by electroless plating is 3 to 15 μm.
The solar cell current collector is prepared by adopting the scheme.
The beneficial effects of the invention are as follows:
1. when the copper grid line is prepared by the method, the printing ink taking the copper-containing sensitizer as the raw material is directly coated on the surface of a substrate, then laser irradiation is carried out, the printing ink contains light absorption components, the heat of laser can be absorbed, the temperature in the printing ink is quickly increased, the copper-containing laser sensitizer in the printing ink is promoted to be subjected to decomposition or reduction reaction at high temperature to form elemental copper particles, the formed elemental copper particles are firmly fixed on the surface of the substrate by the adhesive to obtain an elemental copper seed layer, and then the substrate containing the seed layer is subjected to electrochemical copper plating to prepare the copper grid line; the preparation process has the advantages of simple operation, low equipment investment, high production efficiency, no silver, low cost and the like, and the prepared copper grid line is tightly combined with the base material, so that the copper grid line has higher bonding strength and the purpose of prolonging the subsequent service life is achieved. The laser activation parameters in the application are adopted for activation, so that the number of active species can be greatly increased, the compactness of a subsequent copper coating is further improved, and the conductivity of a circuit is improved.
2. The raw materials of the metal ink are not simple substance copper, but copper compounds with higher stability are used, the ink is only used for preparing simple substance copper seed layers when in use, copper plating is carried out on the seed layers to form a copper circuit, and therefore the stability of the metal ink cannot influence the conductivity of a preparation path.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention.
Thus, the following detailed description of the embodiments of the invention, as provided, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
It is noted that relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The features and capabilities of the present invention are described in further detail below in connection with examples.
Example 1
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 355nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 500mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 37 parts of basic copper phosphate with the particle size of 20nm, 30 parts of sodium polycarboxylate, 20 parts of polydimethylsiloxane, 10 parts of graphite and 3 parts of low-melting-point glass powder.
The preparation method of the copper-containing ink comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 10 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 2
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 532nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 1000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
Wherein the copper-containing ink comprises the following components in parts by weight: 35 parts of basic copper phosphate with the particle size of 80nm, 25 parts of sodium oleate, 22 parts of polyurea, 13 parts of graphite and 5 parts of low-melting glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 12 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 3
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 5W, the laser frequency is 50KHz, the laser scanning speed is 1000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 33 parts of basic copper phosphate with the particle size of 150nm, 21 parts of sodium sulfonate, 24 parts of polydimethylsiloxane, 15 parts of carbon black and 7 parts of urea-formaldehyde resin.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 15 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 4
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the method comprises the steps of coating copper-containing ink on a silicon wafer in a screen printing mode, then irradiating the silicon wafer through a surface laser light source, wherein the wavelength of the laser light source is 1064nm, the laser power is 30W, the laser frequency is 50KHz, the irradiation time is 2000mm/s of laser scanning speed, and then placing the treated silicon wafer in the conventional plating solution for chemical copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 31 parts of basic copper phosphate with the particle size of 250nm, 30 parts of sodium polycarboxylate, 20 parts of polytetrafluoroethylene, 10 parts of graphite and 9 parts of low-melting glass powder.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 17 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 5
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 15W, the laser frequency is 50KHz, the laser scanning speed is 3000mm/s, and the treated silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line thickness is 14 mu m.
The copper-containing ink comprises the following components in parts by weight: 30 parts of basic copper phosphate with the particle size of 300nm, 25 parts of sodium polycarboxylate, 24 parts of polydimethylsiloxane, 10 parts of graphene and 11 parts of phenolic resin.
The preparation method comprises the following steps: the materials and methanol are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 20 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 6
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 355nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 500mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line with the thickness of 14 mu m is obtained.
The copper-containing ink comprises the following components in parts by weight: 30 parts of basic copper carbonate with the particle size of 100nm, 25 parts of sodium polycarboxylate, 24 parts of polydimethylsiloxane, 8 parts of graphite and 13 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and methanol are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 21 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 7
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 532nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 1000mm/s, and the treated silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 15 mu m.
The copper-containing ink comprises the following components in parts by weight: 35 parts of basic copper carbonate with the particle size of 200nm, 20 parts of ethylene glycol, 24 parts of polytetrafluoroethylene, 6 parts of graphite and 15 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and acetone are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 25 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 8
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 25W, the laser frequency is 50KHz, the laser scanning speed is 2000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of basic copper carbonate with the particle size of 200nm, 30 parts of sodium polycarboxylate, 17 parts of polydimethylsiloxane, 3 parts of carbon black and 10 parts of natural latex.
The preparation method comprises the following steps: the materials and tetrahydrofuran are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 12 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 9
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 30W, the laser frequency is 50KHz, the laser scanning speed is 3000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of basic copper carbonate with the particle size of 300nm, 25 parts of sodium polycarboxylate, 15 parts of polydimethylsiloxane, 5 parts of carbon nano tubes and 15 parts of nitrile rubber.
The preparation method comprises the following steps: the materials and tetrahydrofuran are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 15 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 10
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 50W, the laser frequency is 50KHz, the laser scanning speed is 4000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of basic copper carbonate with the particle size of 300nm, 30 parts of polyurethane, 13 parts of polydimethylsiloxane, 7 parts of graphite and 10 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and cyclohexane are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 18 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 11
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 355nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 200mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of copper acetylacetonate with the particle size of 50nm, 30 parts of urea-formaldehyde resin, 11 parts of polydimethylsiloxane, 9 parts of carbon black and 10 parts of low-melting glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 16 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 12
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 532nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 1000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line thickness is 14 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of copper acetylacetonate with the particle size of 120nm, 30 parts of sodium polycarboxylate, 9 parts of polydimethylsiloxane, 11 parts of graphite and 10 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 16 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 13
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 5W, the laser frequency is 50KHz, the laser scanning speed is 2000mm/s, and the treated silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line thickness is 14 mu m.
The copper-containing ink comprises the following components in parts by weight: 45 parts of copper acetylacetonate with the particle size of 180nm, 25 parts of sodium polycarboxylate, 7 parts of polydimethylsiloxane, 13 parts of carbon black and 10 parts of low-melting glass powder.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 17 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 14
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 40W, the laser frequency is 50KHz, the laser scanning speed is 3000mm/s, and the treated silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 15 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of copper acetylacetonate with the particle size of 240nm, 30 parts of sodium polycarboxylate, 5 parts of polyurea, 15 parts of graphite and 10 parts of chloroprene rubber.
The preparation method comprises the following steps: the materials and methanol are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 16 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 15
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 30W, the laser frequency is 50KHz, the laser scanning speed is 4000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line thickness is 14 mu m.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper acetylacetonate with the particle size of 280nm, 20 parts of sodium polycarboxylate, 17 parts of polydimethylsiloxane, 10 parts of graphite and 3 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 8 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 16
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 355nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 500mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxalate with the particle size of 70nm, 20 parts of sodium polycarboxylate, 15 parts of polydimethylsiloxane, 10 parts of graphite and 5 parts of nitrocellulose.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 25 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 17
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 532nm, the laser power is 15W, the laser frequency is 50KHz, the laser scanning speed is 1000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of copper oxalate with the particle size of 130nm, 25 parts of sodium polycarboxylate, 13 parts of polydimethylsiloxane, 15 parts of graphite and 7 parts of low-melting glass powder.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 12 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 18
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 25W, the laser frequency is 50KHz, the laser scanning speed is 2000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxalate with the particle size of 220nm, 20 parts of sodium polycarboxylate, 11 parts of polytetrafluoroethylene, 10 parts of graphite and 9 parts of low-melting glass powder.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 14 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 19
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 30W, the laser frequency is 50KHz, the laser scanning speed is 3000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 45 parts of copper oxalate with the particle size of 280nm, 20 parts of sodium carboxylate, 9 parts of polydimethylsiloxane, 15 parts of graphite and 11 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and methanol are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 13 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 20
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 35W, the laser frequency is 50KHz, the laser scanning speed is 3000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line thickness is 14 mu m.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxalate with the particle size of 300nm, 20 parts of sodium polycarboxylate, 7 parts of polydimethylsiloxane, 10 parts of carbon black and 13 parts of low-melting glass powder.
The preparation method comprises the following steps: and adding the materials and acetone into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 18 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 21
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 355nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 500mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxide with the particle size of 100nm, 20 parts of sodium polycarboxylate, 5 parts of polydimethylsiloxane, 10 parts of graphite and 15 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 22 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 22
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 532nm, the laser power is 10W, the laser frequency is 50KHz, the laser scanning speed is 1000mm/s, and the treated silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 15 mu m.
The copper-containing ink comprises the following components in parts by weight: 60 parts of copper oxide with the particle size of 150nm, 20 parts of sodium polycarboxylate, 12 parts of polyurea, 5 parts of graphite and 3 parts of low-melting glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 9 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 23
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 20W, the laser frequency is 50KHz, the laser scanning speed is 2000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 12 mu m.
The copper-containing ink comprises the following components in parts by weight: 40 parts of copper oxide with the particle size of 200nm, 30 parts of sodium polycarboxylate, 15 parts of polydimethylsiloxane, 10 parts of carbon nano tubes and 5 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and methanol are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 9 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Example 24
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 30W, the laser frequency is 50KHz, the laser scanning speed is 3000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the copper grid line thickness is 14 mu m.
The copper-containing ink comprises the following components in parts by weight: 60 parts of copper oxide with the particle size of 250nm, 20 parts of sodium polycarboxylate, 8 parts of polydimethylsiloxane, 5 parts of graphite and 7 parts of cellulose acetate.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 9 Pa.s.
The solar cell current collector is prepared by adopting the method.
Example 25
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: the copper-containing ink is coated on a silicon wafer in a screen printing mode, then the silicon wafer is irradiated through a surface laser light source, the wavelength of the laser light source is 1064nm, the laser power is 45W, the laser frequency is 50KHz, the laser scanning speed is 4000mm/s, and the processed silicon wafer is placed in the conventional plating solution for electroless copper plating, so that the thickness of a copper grid line is 13 mu m.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxide with the particle size of 300nm, 20 parts of sodium polycarboxylate, 6 parts of polydimethylsiloxane, 5 parts of graphite and 9 parts of low-melting-point glass powder.
The preparation method comprises the following steps: and adding the materials and ethanol into a ball mill for grinding, and uniformly mixing by adopting a three-roll machine to prepare the metal ink with the viscosity of 12 Pa.s.
The solar cell current collector is prepared by adopting the method.
Comparative example 1
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: and (3) coating the copper-containing ink on the silicon wafer in a screen printing mode, and then placing the treated silicon wafer in the conventional plating solution for electroless copper plating.
The copper-containing ink comprises the following components in parts by weight: 37 parts of basic copper phosphate with the particle size of 20nm, 30 parts of sodium polycarboxylate, 20 parts of polydimethylsiloxane and 10 parts of graphite.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 10 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Comparative example 2
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: and (3) coating the copper-containing ink on the silicon wafer in a screen printing mode, and then placing the treated silicon wafer in the conventional plating solution for electroless copper plating.
The copper-containing ink comprises the following components in parts by weight: 30 parts of basic copper carbonate with the particle size of 100nm, 25 parts of sodium polycarboxylate, 24 parts of polydimethylsiloxane and 13 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and methanol are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 21 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Comparative example 3
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: and (3) coating the copper-containing ink on the silicon wafer in a screen printing mode, and then placing the treated silicon wafer in the conventional plating solution for electroless copper plating.
The copper-containing ink comprises the following components in parts by weight: 40 parts of copper acetylacetonate with the particle size of 50nm, 30 parts of urea formaldehyde resin and 11 parts of polydimethylsiloxane.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 16 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Comparative example 4
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: and (3) coating the copper-containing ink on the silicon wafer in a screen printing mode, and then placing the treated silicon wafer in the conventional plating solution for electroless copper plating.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxalate with the particle size of 70nm, 20 parts of sodium polycarboxylate, 15 parts of polydimethylsiloxane and 10 parts of graphite.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 25 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Comparative example 5
A method for producing a solar cell current collector by using a straight copper plating grid line comprises the following steps: and (3) coating the copper-containing ink on the silicon wafer in a screen printing mode, and then placing the treated silicon wafer in the conventional plating solution for electroless copper plating.
The copper-containing ink comprises the following components in parts by weight: 50 parts of copper oxide with the particle size of 100nm, 20 parts of sodium polycarboxylate, 5 parts of polydimethylsiloxane and 15 parts of low-melting-point glass powder.
The preparation method comprises the following steps: the materials and water are added into a ball mill for grinding, and a three-roll machine is adopted for uniform mixing, so that the metal ink with the viscosity of 22 Pa.s is prepared.
The solar cell current collector is prepared by adopting the method.
Experimental example
The electroless plating effect of the current collectors in examples 1 to 25 and comparative examples 1 to 5 was evaluated by visual inspection, the thickness of the copper plating layer was tested according to ASTM B568 (2009), the adhesion effect between the copper plating layer and the silicon wafer was evaluated according to ASTM D3359, the peel strength of the electroless copper plating layer was tested according to IPC-TM-650.4.28, the plating conductivity was tested according to GB/T351-2019 "method of measuring resistivity of metallic materials", and the test results are shown in table 1.
Table 1: test results
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The result shows that the invention uses ink to print ink on a substrate silicon wafer, carries out activation treatment on the printed ink pattern by surface laser scanning, and finally places the workpiece in electroless copper plating solution to obtain the solar cell current collector. The solar cell current collector prepared by the invention has excellent conductivity, and the conductivity reaches 10 7 The adhesion between the metal copper layer and the silicon material reaches the ASTM D3359 4B standard, the peel strength of the plating layer is more than 1.0N/mm, and the bonding effect and the conductivity are higher. Compared with the traditional photoetching method, ink printing, screen printing and micro-contact printing, the method does not need a mask, has the advantages of ink printing and laser selective metallization, has good economic benefit, has simple operation flow, and is very suitable for industrial production and application. In comparative examples 1 to 5, no laser activation operation was performed, no active species were generated on the substrate, and elemental copper could not be attached to the substrate surface during the plating process, and thus no copper line was generated.
Claims (10)
1. The method for producing the solar cell current collector by the straight copper plating grid line is characterized by comprising the following steps of: coating the copper-containing ink on a substrate, irradiating the substrate by a laser light source, and then placing the treated substrate in a plating solution for electroless copper plating.
2. The method for producing a solar cell current collector according to claim 1, wherein the copper-containing ink comprises the following components in parts by weight: 30-60 parts of copper-containing laser sensitizer, 5-24 parts of thickener, 3-15 parts of adhesive, 20-30 parts of dispersing agent and 3-15 parts of light absorber.
3. The method for producing a solar cell current collector according to claim 2, wherein the copper-containing laser sensitizer comprises at least one of basic copper phosphate, basic copper carbonate, copper acetylacetonate, copper oxalate and copper oxide; the particle size of the copper-containing laser sensitizer is 5-500nm.
4. The method for producing a solar cell current collector according to claim 2, wherein the thickener comprises one of polydimethylsiloxane, polyurea, and polytetrafluoroethylene, and the dispersant comprises one of sodium oleate, carboxylate, sulfate, sulfonate, quaternary ammonium salt, ethylene glycol, sodium polycarboxylate, acrylate, and polyurethane.
5. The method for producing a solar cell current collector of claim 2, wherein the binder comprises one of polyvinyl alcohol, urea formaldehyde resin, phenolic resin, cellulose acetate, cellulose nitrate, neoprene, nitrile rubber, polyacrylate, natural latex, and low melting point glass frit.
6. The method for producing a solar cell current collector of claim 2, wherein the solvent of the copper-containing ink comprises at least one of water, ethanol, methanol, acetone, tetrahydrofuran, dichloromethane, and cyclohexane.
7. The method for producing a solar cell current collector according to claim 1, wherein the copper-containing ink has a viscosity of 0.5 to 30 Pa-s, and the coating means comprises one of screen printing, ink printing, transfer printing, and ink-jet printing.
8. The method for producing solar cell current collector by using the straight copper plating grid line according to claim 1, wherein the laser light source is a surface laser light source, the laser wavelength is 355nm, 532nm or 1064nm, the laser power is 1-300W, the laser frequency is 10-100KHz, and the laser scanning speed is 100-5000mm/s.
9. The method for producing a solar cell current collector according to claim 1, wherein the copper plating layer has a thickness of 3 to 15 μm.
10. A solar cell current collector, characterized in that it is manufactured by the method according to claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311292574.6A CN117317061A (en) | 2023-10-08 | 2023-10-08 | Solar cell current collector and method for producing solar cell current collector by using straight copper plating grid line |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311292574.6A CN117317061A (en) | 2023-10-08 | 2023-10-08 | Solar cell current collector and method for producing solar cell current collector by using straight copper plating grid line |
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| CN117317061A true CN117317061A (en) | 2023-12-29 |
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| CN202311292574.6A Pending CN117317061A (en) | 2023-10-08 | 2023-10-08 | Solar cell current collector and method for producing solar cell current collector by using straight copper plating grid line |
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| CN (1) | CN117317061A (en) |
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