CN117310879A - Asymmetric end face coupler based on lithium niobate and preparation method thereof - Google Patents
Asymmetric end face coupler based on lithium niobate and preparation method thereof Download PDFInfo
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- CN117310879A CN117310879A CN202311111256.5A CN202311111256A CN117310879A CN 117310879 A CN117310879 A CN 117310879A CN 202311111256 A CN202311111256 A CN 202311111256A CN 117310879 A CN117310879 A CN 117310879A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000005253 cladding Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000013307 optical fiber Substances 0.000 claims abstract description 9
- 230000008859 change Effects 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000010168 coupling process Methods 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000012792 core layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The application provides an asymmetric end face coupler based on lithium niobate and a preparation method thereof, wherein the asymmetric end face coupler comprises a substrate layer, a lower cladding layer, a first waveguide and a second waveguide of lithium niobate materials arranged on the lower cladding layer; the first waveguide comprises a trapezoid gradual change sub-waveguide and a strip-shaped output sub-waveguide, and the second waveguide is an independent strip-shaped waveguide; and an upper cladding layer disposed on the first waveguide and the second waveguide. The lithium niobate asymmetric end face coupler in the scheme has the advantages of low etching requirement, easiness in processing and large optical fiber alignment tolerance.
Description
Technical Field
The application relates to the technical field of optoelectronic device design, in particular to an asymmetric end face coupler based on lithium niobate and a preparation method thereof.
Background
The lithium niobate material has higher electro-optic coefficient, piezoelectric coefficient, thermo-optic coefficient, acousto-optic coefficient and photoelastic coefficient, and is widely applied to various integrated photon devices. Conventional lithium niobate devices are typically based on bulk lithium niobate materials that are locally doped by a titanium diffusion or proton exchange process to slightly increase the refractive index of the doped region, thereby forming a waveguide structure. In order to improve the refractive index difference between the core layer and the cladding layer, a lithium niobate technology on an insulator is provided in some technologies, and a submicron-thickness single crystal lithium niobate film is bonded on a silicon-based silicon dioxide layer to form a novel material system, wherein the maximum refractive index difference between a waveguide and the core layer can reach 0.7, so that the binding capacity of the waveguide to an optical mode and the electro-optical regulation effect are greatly improved, and the integration level of a lithium niobate optical device is improved. However, the smaller waveguide geometry and higher cladding index difference cause serious mode field size mismatch problems with lithium niobate optical waveguides and standard single mode optical fibers. At present, the grating coupling device is arranged on the lithium niobate thin film layer, or the end surface coupling device is arranged at the edge of the chip, so that the method is two common technical schemes for solving the problem. The grating coupler is designed according to the Bragg diffraction principle, and the theoretical coupling efficiency upper limit is not high. The end-face coupling device has the advantages of high coupling efficiency and large coupling bandwidth, but the end-face coupling device generally has the defects of smaller alignment tolerance, longer device size and capability of being used for testing after polishing and grinding the end face.
Disclosure of Invention
The technical problem to be solved by the application is that the existing lithium niobate optical waveguide and the standard single mode optical fiber have small alignment tolerance and strict etching requirement in the coupling process, and therefore, the application provides an asymmetric end face coupler based on lithium niobate and a preparation method thereof.
Aiming at the technical problems, the application provides the following technical scheme:
in a first aspect, the present application provides an asymmetric end-face coupler based on lithium niobate, including:
a base layer;
a lower cladding layer disposed on the base layer;
a first waveguide and a second waveguide of lithium niobate material disposed on the lower cladding layer; the first waveguide consists of a trapezoid gradual change sub-waveguide and a strip-shaped output sub-waveguide, and the second waveguide is an independent strip-shaped waveguide;
and an upper cladding layer disposed on the first waveguide and the second waveguide.
In some embodiments, the asymmetric end-face coupler based on lithium niobate, wherein a narrow side of the trapezoid graded sub-waveguide of the first waveguide is located at the coupling end face, and a wide side is located at the connection position of the bar-shaped output sub-waveguide; the width of the strip-shaped output sub-fluctuation is the same as the width of the trapezoid gradient sub-waveguide broadside; the trapezoid gradual change sub-waveguide is used for exchanging energy with other on-chip devices;
in some embodiments, the lithium niobate-based asymmetric end-face coupler has a width of the second waveguide that is the same as a width of a narrow side of the tapered waveguide in the first waveguide.
In some embodiments of the lithium niobate-based asymmetric end-face coupler, the tapered trapezoidal-shaped sub-waveguide in the first waveguide has a length that is the same as a length of the second waveguide.
In some embodiments, the asymmetric end-face coupler based on lithium niobate, the sidewalls of the first waveguide and the second waveguide are formed with a set angle of inclination.
In some embodiments, the asymmetric end-face coupler is based on lithium niobate, and the angle of inclination is 70-90 degrees.
In some embodiments, the thickness, the narrow side width and the separation distance of the first waveguide and the second waveguide are determined by the optical mode field specification of the input optical interface; the optical mode field specification includes a shape and a size of the mode field.
In some embodiments, the lithium niobate-based asymmetric end-face coupler has the same thickness of the first waveguide and the second waveguide, and is in the range of 200-700 nm;
the width of the narrow side of the first waveguide is the same as that of the second waveguide, and the narrow side of the first waveguide is in the range of 100-500 nm; the width of the broad side of the first waveguide is in the range of 500-3000 nm.
In some embodiments, the lithium niobate-based asymmetric end-face coupler is spaced apart from the first waveguide by a distance in the range of 500-4000 nm.
In some embodiments of the lithium niobate-based asymmetric end-face coupler, the lower cladding layer is made of silicon dioxide, has a thickness in the range of 1.5-3.5 μm,
the upper cladding layer is made of silicon dioxide, and the thickness of the upper cladding layer is in the range of 0.5-4 mu m.
In a second aspect, the present application provides a method for preparing a lithium niobate asymmetric end-face coupler, including:
preparing a mask at a position on the thin film lithium niobate chip, which is required to be coupled with an optical fiber;
preparing a first waveguide and a second waveguide on a mask, wherein the first waveguide consists of a trapezoid graded sub-waveguide and a strip-shaped output sub-waveguide, and the second waveguide is an independent strip-shaped waveguide;
a gap is formed between the first waveguide and the second waveguide;
preparing a silica upper cladding layer with a certain thickness while filling up the gap between the first waveguide and the second waveguide;
and cutting the thin film lithium niobate chip, and polishing the coupling end surface to obtain the lithium niobate asymmetric end surface coupler.
Compared with the prior art, the technical scheme of the application has the following technical effects:
the asymmetric end face coupler based on lithium niobate and the preparation method thereof have the advantages of simple structure, low processing difficulty, high suitability and capability of being matched with the existing finished optical fiber. Meanwhile, the width adjustable range of the strip-shaped output sub-waveguide is large, the requirements of coupling high-order modes and polarized light can be met by adjusting different parameters, and the strip-shaped output sub-waveguide has rich application scenes.
Drawings
The objects and advantages of the present application will be appreciated by the following detailed description of preferred embodiments thereof, with reference to the accompanying drawings, in which:
fig. 1 is a schematic perspective view of an asymmetric end-face coupler of lithium niobate according to an embodiment of the present application;
FIG. 2 is a side view of the asymmetric end face coupler of lithium niobate of FIG. 1 in the Y-direction;
FIG. 3 is a top view of the asymmetric end-face coupler of lithium niobate of FIG. 1 in the negative X direction without a silica upper cladding;
FIG. 4 is a flow chart of the preparation of an asymmetric end-face coupler of lithium niobate according to one embodiment of the present application;
FIG. 5 is a coupling line for example one of an asymmetric end-face coupler;
FIG. 6 is a coupling line for example two of an asymmetric end-face coupler.
Detailed Description
The following description of the embodiments of the present application will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In addition, the technical features described below in the different embodiments of the present application may be combined with each other as long as they do not collide with each other.
The embodiment of the application provides an asymmetric end face coupler based on lithium niobate, as shown in fig. 1, the coupler comprises a substrate layer 1, a lower cladding layer 2 arranged on the substrate layer 1, a first waveguide 3 and a second waveguide 4 which are made of lithium niobate materials and arranged on the lower cladding layer 2, and an upper cladding layer 5 arranged on the first waveguide 3 and the second waveguide 3. Wherein the first waveguide 3 comprises a trapezoid graded sub-waveguide 31 and a strip-shaped output sub-waveguide 32.
As shown in fig. 2, in the asymmetric end-face coupler based on lithium niobate, the width of the narrow side of the trapezoid graded sub-waveguide 31 of the first waveguide and the width of the second waveguide 4 are both Win, the thickness is h, and the interval between the two waveguides is gap. The side walls of the first waveguide 3 and the second waveguide 4 are formed with a set inclination angle α. Preferably, the inclination angle is 70-90 degrees, i.e. the cross section of the first waveguide 3 and the second waveguide 4 may be a trapezoid structure (not 90 degrees) or a rectangular structure (90 degrees).
As shown in fig. 3, in the asymmetric end-face coupler based on lithium niobate, the width of the strip-shaped output sub-waveguide 32 of the first waveguide is Wout, and the length of the trapezoid graded sub-waveguide 31 of the first sub-waveguide is the same as the length of the second waveguide 4, and is L.
In a specific implementation, the thickness h, the narrow side width Win and the distance gap between the first waveguide 3 and the second waveguide 4 of the lithium niobate asymmetric end-face coupler are determined by the optical mode field specification of an input optical interface; the optical mode field specification comprises the shape and the size of the mode field, and can be determined through simulation results.
As a preferred solution, the thickness h of the first waveguide 3 and the second waveguide 4 are the same, and are in the range of 300-700 nm; the width of the narrow side of the first waveguide 3 and the width Win of the second waveguide 4 are in the range of 100-500 nm; the width Wout of the broad side of the first waveguide 3 is in the range of 500-3000 nm. The distance gap between the first waveguide 3 and the second waveguide 4 is in the range of 500-4000 nm.
In some embodiments, the material of the lower cladding layer 2 is silicon dioxide, and the thickness is in the range of 1.5-3.5 μm, and the material of the upper cladding layer 5 is silicon dioxide, and the thickness is in the range of 0.5-4 μm.
In some embodiments, a method for preparing a lithium niobate asymmetric end-face coupler is provided in an embodiment of the present application, as shown in fig. 4, including:
step one: and preparing a required mask through a photoetching process at a position on a chip of the finished film lithium niobate on the insulator, which is required to be coupled with the optical fiber.
Step two: on the basis of the previous step, photoresist is used as a mask, and the first waveguide and the second waveguide are prepared through an etching process.
Step three: and adopting a deposition process on the first waveguide and the second waveguide, and preparing a silicon dioxide upper cladding with a certain thickness while filling up a gap between the first waveguide and the second waveguide.
Step four: and after cutting and dissociating the chip, polishing the coupling end face by using a polishing process to obtain the coupling end face with a certain smoothness degree.
By the scheme in the embodiment of the application, the following two specific examples of the lithium niobate asymmetric end face coupler can be obtained:
example one:
an asymmetric end-face coupler based on a lithium niobate thin film is shown in fig. 1, wherein,
the substrate 1 is made of silicon material, the lower cladding 2 is made of silicon dioxide material, and the thickness is 2 mu m;
the thickness h of the first sub-waveguide 3 and the second waveguide 4 is 400nm, and the width Win of the narrow side of the first sub-waveguide 3 is 400nm;
the spacing distance gap between the first waveguide 3 and the second waveguide 4 is 1500nm;
the width Wout of the wide side of the first waveguide 3 is 2500nm;
the length L of the first waveguide 3 and the second waveguide 4 is 500 μm;
when the wavelength of the input optical fiber is 1550nm, the mode field diameter is 3.2 mu m, and the light spot shape is circular.
The thickness of the upper cladding layer 5 of silica material is 3 μm;
under the above parameters, the coupling lines of the finally calculated designed asymmetric end-face coupler example 1 are shown in fig. 5, in which the transmission efficiency is 89.65% at 1550nm wavelength and the 1dB bandwidth in the C-band is greater than 100nm.
Example two:
an asymmetric end-face coupler based on lithium niobate thin film is different from example one in that:
the thickness h of the first sub waveguide 3 and the second waveguide 4 is 200nm, and the narrow side width Win is 250nm;
the interval distance gap between the first waveguide 3 and the second waveguide 4 is 1300nm;
the width Wout of the wide side of the first waveguide 3 is 1500nm;
the length L of the first waveguide 3 and the second waveguide 4 is 300 μm;
when the wavelength of the input optical fiber is 1310nm, the mode field diameter is 3 mu m, and the shape of the light spot is circular.
Under the above parameters, the coupling lines of the finally calculated designed asymmetric end-face coupler example 2 are shown in fig. 6, wherein the transmission efficiency is 79.02% at 1310nm wavelength and the 1dB bandwidth at O-band is greater than 100nm.
Obviously, the device provided in the above example of the application proves that the scheme in the example of the application can meet the requirements of transmission efficiency and bandwidth through test results.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While nevertheless, obvious variations or modifications are contemplated as falling within the scope of the present application.
Claims (11)
1. A lithium niobate-based asymmetric end-face coupler, comprising:
a base layer;
a lower cladding layer disposed on the base layer;
a first waveguide and a second waveguide of lithium niobate material disposed on the lower cladding layer; the first waveguide consists of a trapezoid gradual change sub-waveguide and a strip-shaped output sub-waveguide, and the second waveguide is an independent strip-shaped waveguide;
and an upper cladding layer disposed on the first waveguide and the second waveguide.
2. The lithium niobate-based asymmetric end face coupler of claim 1, wherein:
the narrow side of the trapezoid gradual change sub-waveguide of the first waveguide is positioned at the coupling end face, and the wide side of the trapezoid gradual change sub-waveguide of the first waveguide is positioned at the joint of the bar-shaped output sub-waveguides; the width of the strip-shaped output sub-fluctuation is the same as the width of the trapezoid gradient sub-waveguide broadside; wherein the trapezoid graded sub-waveguide is used for exchanging energy with other on-chip devices.
3. The lithium niobate-based asymmetric end face coupler of claim 1, wherein:
the width of the second waveguide is the same as the width of the narrow side of the trapezoid graded sub-waveguide in the first waveguide.
4. The lithium niobate-based asymmetric end face coupler of claim 1, wherein:
the length of the tapered trapezoidal sub-waveguide in the first waveguide is the same as the length of the second waveguide.
5. The lithium niobate asymmetric end face coupler of claim 1, wherein:
the side walls of the first waveguide and the second waveguide are formed with set inclination angles.
6. The lithium niobate asymmetric end face coupler of claim 5, wherein:
the inclination angle is 70-90 degrees.
7. The lithium niobate asymmetric end face coupler according to any of claims 1 to 6, wherein:
the thickness, narrow side width and interval distance of the first waveguide and the second waveguide are determined by the optical mode field specification of the input optical interface; the optical mode field specification includes a shape and a size of the mode field.
8. The lithium niobate asymmetric end face coupler of claim 7, wherein:
the thickness of the first waveguide is the same as that of the second waveguide, and the first waveguide and the second waveguide are located in the range of 200-700 nm;
the width of the narrow side of the first waveguide is the same as that of the second waveguide, and the narrow side of the first waveguide is in the range of 100-500 nm; the width of the broad side of the first waveguide is in the range of 500-3000 nm.
9. The lithium niobate asymmetric end face coupler of claim 8, wherein:
the first waveguide is spaced from the second waveguide by a distance in the range of 500-4000 nm.
10. The lithium niobate asymmetric end face coupler of claim 1, wherein:
the lower cladding layer is made of silicon dioxide, the thickness is in the range of 1.5-3.5 mu m,
the upper cladding layer is made of silicon dioxide, and the thickness of the upper cladding layer is in the range of 0.5-4 mu m.
11. A method of making a lithium niobate asymmetric end face coupler according to any of claims 1 to 10, comprising:
preparing a mask at a position on the thin film lithium niobate chip, which is required to be coupled with an optical fiber;
preparing a first waveguide and a second waveguide on a mask, wherein the first waveguide consists of a trapezoid graded sub-waveguide and a strip-shaped output sub-waveguide, and the second waveguide is an independent strip-shaped waveguide;
a gap is formed between the first waveguide and the second waveguide;
preparing a silica upper cladding layer with a certain thickness while filling up the gap between the first waveguide and the second waveguide;
and cutting the thin film lithium niobate chip, and polishing the coupling end surface to obtain the lithium niobate asymmetric end surface coupler.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311111256.5A CN117310879A (en) | 2023-08-30 | 2023-08-30 | Asymmetric end face coupler based on lithium niobate and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311111256.5A CN117310879A (en) | 2023-08-30 | 2023-08-30 | Asymmetric end face coupler based on lithium niobate and preparation method thereof |
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