CN115793140A - End face coupler based on coupling of optical fiber and lithium niobate waveguide and preparation method thereof - Google Patents
End face coupler based on coupling of optical fiber and lithium niobate waveguide and preparation method thereof Download PDFInfo
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- CN115793140A CN115793140A CN202211511339.9A CN202211511339A CN115793140A CN 115793140 A CN115793140 A CN 115793140A CN 202211511339 A CN202211511339 A CN 202211511339A CN 115793140 A CN115793140 A CN 115793140A
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Abstract
The invention relates to the technical field of optical devices, and provides an end face coupler based on coupling of an optical fiber and a lithium niobate waveguide. The first waveguide core layer comprises a first waveguide and a first tapered waveguide, one side edge of the first waveguide is connected with one side edge of the first tapered waveguide, and the width of the side edge connected with the first waveguide is the same; the second waveguide core layer comprises a second waveguide and a second tapered waveguide, one side edge of the second waveguide is connected with one side edge of the second tapered waveguide, and the width of the side edge where the second tapered waveguide is connected with the second waveguide is the same. The first conical waveguide and the second conical waveguide are mutually reversely superposed; and the side of the second waveguide far away from the second conical waveguide is subjected to mode matching with the external optical fiber. The first flat plate layer and the first waveguide core layer are made of thin-film lithium niobate materials, and the second waveguide core layer is made of materials with refractive indexes higher than those of the insulating layer or materials with high and low refractive indexes in periodic distribution.
Description
Technical Field
The invention relates to the technical field of optical devices, in particular to an end face coupler based on coupling of an optical fiber and a lithium niobate waveguide and a preparation method thereof.
Background
Electro-optical modulators based on thin-film lithium niobate have been developed rapidly, and have significant advantages in aspects of modulator bandwidth, on-chip insertion loss, linearity, modulation efficiency and the like. However, in terms of realizing connection between the chip and the optical network, the large refractive index of the lithium niobate thin film causes a serious problem of mode matching, thereby causing large insertion loss. End-couplers are a common solution and may also be referred to as spot-size converters. The essence of this approach is to adjust the refractive index, i.e. the larger mode refractive index in the waveguide gradually decreases through a specific structure until the refractive index matches the refractive index of the space outside the chip, so as to achieve the matching of the chip and the external mode spot, thereby reducing the coupling loss.
At present, two common modes of a spot matching scheme exist: one is to make the tapered waveguide thin enough, and distribute the light energy around the lithium niobate waveguide, which can couple with the small mode field spot, but the lithium niobate waveguide of this way needs to be thin enough, so the coupling efficiency with the optical fiber can be affected by the small change of its geometric size, so there are the disadvantages of small tolerance, high preparation precision, and low yield. In another mode, a low-refractive index material transition mode is adopted to amplify mode light in the lithium niobate waveguide so as to match the mode of the optical fiber, and the material is generally low-refractive index polymer or silicon oxynitride. However, because the refractive index of the lithium niobate waveguide is too large, the mode spot transition is generally performed in a manner that two or more levels of lithium niobate tapered waveguides are cascaded with each other; from a design point of view, the tip of the lithium niobate tapered waveguide needs to be thin enough not to form an obvious refractive index abrupt change at the splicing position of the tip of the tapered waveguide, thereby causing mode reflection in the waveguide. However, in the actual manufacturing process, considering the resolution limit of the apparatus, the tapered waveguide tip below 200nm can only be manufactured by using a high-resolution electron beam lithography machine or a high-precision deep ultraviolet lithography machine with a process below 100nm. Therefore, the preparation cost is high, which is not favorable for deep mass production and marketization.
Disclosure of Invention
The invention provides an end face coupler based on coupling of an optical fiber and a lithium niobate waveguide and a preparation method thereof, aiming at overcoming the defects of small tolerance and high preparation cost of the end face coupler in the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows:
an end face coupler based on coupling of an optical fiber and a lithium niobate waveguide comprises a substrate, an insulating layer, a first flat plate layer, a first waveguide core layer and a second waveguide core layer which are sequentially arranged from bottom to top.
The first waveguide core layer comprises a first waveguide and a first tapered waveguide, one side edge of the first waveguide is connected with one side edge of the first tapered waveguide, and the width of the side edge connected with the first waveguide is the same; the second waveguide core layer comprises a second waveguide and a second tapered waveguide, one side edge of the second waveguide is connected with one side edge of the second tapered waveguide, and the width of the side edge where the second tapered waveguide is connected with the second waveguide is the same. The first conical waveguide and the second conical waveguide are oppositely overlapped with each other; and one side of the second waveguide, which is far away from the second conical waveguide, is subjected to mode matching with an external optical fiber.
The insulating layer is made of low-refractive-index non-metal oxide materials or polymers, the first flat plate layer and the first waveguide core layer are made of thin-film lithium niobate materials, and the second waveguide core layer is made of materials with refractive indexes higher than those of the insulating layer or materials with high and low refractive indexes distributed periodically.
Preferably, the thickness of the first flat plate layer is less than or equal to 250nm; the thickness of the first waveguide core layer is equal to that of the first flat plate layer, or is within +/-100 nm of the thickness of the first flat plate layer; the thickness of the second waveguide core layer is less than or equal to 8 μm.
Preferably, the width of the tip of the first tapered waveguide is less than or equal to 350nm, and the width of the first waveguide is less than 5 μm; the width of the tip of the second tapered waveguide is less than or equal to 2 μm; the width of the second waveguide is less than or equal to 10 μm.
Preferably, the first tapered waveguide and the second tapered waveguide have the same length and have a length greater than or equal to 80 μm, or the absolute value of the difference between the lengths of the first tapered waveguide and the second tapered waveguide is less than or equal to 50 μm.
Preferably, the second waveguide core layer is a ridge waveguide structure, and the etching depth of the second waveguide core layer is greater than or equal to 70% of the thickness of the second waveguide layer.
As a preferred scheme, an etching stop layer made of a low-refractive-index medium is arranged between the first waveguide core layer and the second waveguide core layer; the refractive index of the etching stop layer is lower than that of the thin film lithium niobate.
Preferably, the upper surface of the second waveguide core layer is covered with a cladding layer made of a low-refractive-index dielectric material or a polymer material; the upper surface of the first waveguide is covered with a cladding made of a low-refractive-index dielectric material or a polymer material.
Preferably, a polymer or low-refractive-index medium layer is arranged on one side of the first waveguide far away from the first tapered waveguide in a covering manner.
Furthermore, the invention also provides a preparation method of the end-face coupler based on coupling of the optical fiber and the lithium niobate waveguide, which is used for preparing the end-face coupler provided by any technical scheme. Which comprises the following steps:
s1: preparing a first waveguide and a first tapered waveguide on a thin-film lithium niobate wafer by utilizing photoetching and lithium niobate etching technologies;
s2: preparing a low-refractive-index dielectric material serving as an etching stop layer in the sample prepared in the step S1 by using a deposition process;
s3: spin-coating a high-refractive-index polymer or depositing a high-refractive-index dielectric material or a high-refractive-index periodically-distributed dielectric material above the sample prepared in the step S2 to prepare a second waveguide core layer;
s4: etching the second waveguide core layer on the sample prepared in the step S3 by utilizing photoetching and etching processes to prepare a second waveguide and a second tapered waveguide;
s5: preparing a low-refractive-index dielectric material for the sample prepared in the step S4 by using a deposition process or preparing a polymer material as a cladding of the second waveguide core layer by using a spin coating process;
s6: and (5) performing end face cleavage or slicing and polishing on the sample prepared in the step (S5) to finish the preparation of the end face coupler.
Preferably, in the step S2, the low refractive index medium includes silicon oxide, silicon oxynitride, and a polymer.
When silicon oxide and silicon oxynitride are used as low-refractive-index media to prepare the etching stop layer, the etching stop layer is prepared by a PECVD or ICP-CVD deposition process; when the polymer is used as a low refractive index medium to prepare the etching stop layer, the etching stop layer is prepared by a spin coating or spray coating process and is subjected to thermal curing or ultraviolet curing.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that: the widths of the first tapered waveguide and the second tapered waveguide are gradually transited from the tip to the direction connected with other waveguides and gradually widened, namely the first tapered waveguide tip and the second tapered waveguide have large sizes, are simple to prepare and have large tolerance, and are beneficial to large-scale mass production; the first waveguide core layer is made of thin-film lithium niobate materials, the second waveguide core layer is made of materials with higher refractive indexes or materials with high and low refractive indexes and distributed periodically, the thin-film lithium niobate can achieve high-efficiency coupling only by etching once, and the process flow is simple. In addition, the invention can realize the stable and high-efficiency coupling of the lithium niobate waveguide and the small mode field optical fiber, the wavelength range can cover the near visible light to near infrared wave band, and the coupling efficiency is more than 85 percent.
Drawings
Fig. 1 is a schematic structural diagram of an end-face coupler based on coupling of an optical fiber and a lithium niobate waveguide according to the present invention.
Fig. 2 is a top view of the end-face coupler of the present invention.
Fig. 3 is a side view of the end-face coupler of the present invention.
Fig. 4 is a cross-sectional view of an end-face coupler of the present invention.
FIG. 5 is a graph of the coupling efficiency of a lithium niobate waveguide and a small mode field optical fiber of the present invention.
FIG. 6 is a diagram showing the coupling efficiency between a lithium niobate waveguide layer and a small mode field optical fiber according to the present invention.
Fig. 7 is a flowchart of a method for manufacturing an end-face coupler based on coupling of an optical fiber and a lithium niobate waveguide according to the present invention. The waveguide structure comprises a substrate 1, an insulating layer 2, a first flat plate layer 3, a first waveguide core layer 4, a first waveguide 41, a first waveguide 42, a first tapered waveguide, a second waveguide core layer 5, a second waveguide 51 and a second tapered waveguide 52.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent;
for the purpose of better illustrating the present embodiments, certain elements of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product;
it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Example 1
This embodiment provides an end-face coupler based on coupling between an optical fiber and a lithium niobate waveguide, which is a schematic structural diagram of the end-face coupler of this embodiment, as shown in fig. 1 to 4.
The end-face coupler based on coupling of the optical fiber and the lithium niobate waveguide comprises a substrate 1, an insulating layer 2, a first flat plate layer 3, a first waveguide core layer 4 and a second waveguide core layer 5 which are sequentially arranged from bottom to top.
The first waveguide core layer 4 includes a first waveguide 41 and a first tapered waveguide 42, one side of the first waveguide 41 is connected to one side of the first tapered waveguide 42, and widths of the sides where the first tapered waveguide 42 and the first waveguide 41 are connected are the same.
The second waveguide core layer 5 includes a second waveguide 51 and a second tapered waveguide 52, a side of the second waveguide 51 is connected to a side of the second tapered waveguide 52, and widths of sides where the second tapered waveguide 52 and the second waveguide 51 are connected are the same.
The first tapered waveguide 42 and the second tapered waveguide 52 are arranged in a mutually opposite superposition; the side of the second waveguide 51 away from the second tapered waveguide 52 is mode-matched to the external optical fiber. The tip direction of the first waveguide core layer 4 is a direction of coupling with an optical fiber.
The insulating layer 2 is made of a low-refractive-index non-metal oxide material or a polymer, the first flat plate layer 3 and the first waveguide core layer 4 are made of thin-film lithium niobate materials, and the second waveguide core layer 5 is made of a material with a refractive index higher than that of the insulating layer 2 or a material with high and low refractive indexes periodically distributed.
Preferably, the refractive index of the second waveguide core layer 5 is between 1.5 and 2.1.
In an alternative embodiment, the thickness of the first plate layer 3 is less than or equal to 250nm; the thickness of the first waveguide core layer 4 is equal to that of the first slab layer 3, or differs from that of the first slab layer 3 by ± 100nm; the thickness of the second waveguide core layer 5 is less than or equal to 8 μm.
Further, the tip width of the first tapered waveguide 42 is less than or equal to 350nm, and the width of the first waveguide 41 is less than 5 μm.
The width of the tip of the second tapered waveguide 52 is less than or equal to 2 μm, and the width of the second waveguide is less than or equal to 10 μm.
Further, the lengths of the first tapered waveguide 42 and the second tapered waveguide 52 are equal and greater than or equal to 80 μm, or the absolute value of the difference between the lengths of the first tapered waveguide 42 and the second tapered waveguide 52 is less than or equal to 50 μm.
In another alternative embodiment, the second waveguide core layer 5 is a ridge waveguide structure, and the etching depth is greater than or equal to 70% of the thickness of the second waveguide 51 layer.
Further optionally, the second waveguide core layer 5 is a strip waveguide structure.
The length of the second tapered waveguide 52 and the first tapered waveguide 42 in this embodiment is a key parameter for achieving mode matching. As can be seen from fig. 2 to 4, in the end-face coupler of the present embodiment, the widths of the first tapered waveguide 42 and the second tapered waveguide 52 gradually transition from the tip to the direction of connection with other waveguides, and gradually increase, and as shown in fig. 4 (a), 4 (B), 4 (C), and 4 (D), the mode spots of the four sections a, B, C, and D sequentially cut by the dividing lines a '-a ", B' -B", C '-C ", and D' -D" are gradually reduced from the a section that is to be matched with the optical fiber, the mode spot of the D section is the smallest, and the mode spot of the D section is matched with the lithium niobate mode spot of the first waveguide 41, so that the mode spot conversion efficiency is greatly improved, and the coupling between the optical fiber and the lithium niobate waveguide is realized.
In addition, in the embodiment, the polymer or silicon nitride with a higher refractive index is used as the mode conversion material, the thin film lithium niobate can realize high-efficiency coupling only by etching once, and the process flow is simple. The size of the tip of the first tapered waveguide 42 and the size of the second tapered waveguide 52 are large, the preparation is simple, the tolerance is large, and large-scale mass production is facilitated; the wavelength range can cover the near visible light to the near infrared band.
As shown in fig. 5, the coupling efficiency of the TE mode light at wavelengths of 1310nm and 1550nm, the lithium niobate waveguide and the small mode field optical fiber is shown. It can be seen that when TE light with a wavelength of 1310nm or 1550nm is coupled, a coupling efficiency of more than 85% can be achieved when the coupling distance is greater than 80 μm.
The embodiment can realize the coupling of the lithium niobate waveguide and the small mode field optical fiber, as shown in fig. 6, which is a graph of the coupling efficiency of the lithium niobate waveguide layer and the small mode field optical fiber at the wavelength of 900-1700 nm. The coupling efficiency of the end face coupler prepared by the embodiment is 1.3dB/facet and 1.5dB/facet in 1310nm and 1550nm wave bands respectively, which shows that the end face coupler can realize stable and efficient coupling in near visible light to near infrared wave bands (900 nm-1700 nm).
Example 2
This example is an improvement over the fiber-to-lithium niobate waveguide-based end-face coupler proposed in example 1.
The end-face coupler based on coupling of the optical fiber and the lithium niobate waveguide provided by the embodiment comprises a substrate 1, an insulating layer 2, a first flat plate layer 3, a first waveguide core layer 4 and a second waveguide core layer 5 which are sequentially arranged from bottom to top.
The first waveguide core layer 4 includes a first waveguide 41 and a first tapered waveguide 42, a side of the first waveguide 41 is connected to a side of the first tapered waveguide 42, and widths of the sides of the first tapered waveguide 42 connected to the first waveguide 41 are the same. The second waveguide core layer 5 includes a second waveguide 51 and a second tapered waveguide 52, a side of the second waveguide 51 is connected to a side of the second tapered waveguide 52, and widths of the sides where the second tapered waveguide 52 and the second waveguide 51 are connected are the same.
The first tapered waveguide 42 and the second tapered waveguide 52 are arranged in a mutually opposite superposition; the side of the second waveguide 51 away from the second tapered waveguide 52 is mode-matched to the external optical fiber.
The insulating layer 2 is made of a low-refractive-index non-metal oxide material or a polymer, the first flat plate layer 3 and the first waveguide core layer 4 are made of thin-film lithium niobate materials, and the second waveguide core layer 5 is made of a material with a refractive index higher than that of the insulating layer 2 or a material with high and low refractive indexes distributed periodically.
Further, a polymer is spin-coated or a low refractive index medium layer is deposited on a side of the first waveguide 41 away from the first tapered waveguide 42.
An etching stop layer made of a low-refractive-index medium is arranged between the first waveguide core layer 4 and the second waveguide core layer 5; the refractive index of the etching cut-off layer is lower than that of the thin film lithium niobate.
Preferably, the thickness of the etching stop layer is less than or equal to 100nm.
Further preferably, the low refractive index dielectric material used comprises silicon oxide or silicon oxynitride.
In this embodiment, the additional etching medium layer is used to effectively protect devices outside the coupling structure.
In another alternative embodiment, the upper surface of the second waveguide core layer 5 is covered with a cladding layer made of a low refractive index dielectric material or a polymer material. The upper surface of the first waveguide is covered with a cladding made of a low-refractive-index dielectric material or a polymer material.
Example 3
This embodiment proposes a method for manufacturing an end-face coupler based on coupling an optical fiber and a lithium niobate waveguide, which is used to manufacture the end-face coupler based on coupling an optical fiber and a lithium niobate waveguide as described in embodiments 1 and 2. Fig. 7 is a flow chart of the manufacturing method of this example.
The method for manufacturing an end-face coupler based on coupling of an optical fiber and a lithium niobate waveguide provided by the embodiment comprises the following steps:
s1: preparing a first waveguide 41 and a first tapered waveguide 42 on a thin-film lithium niobate wafer by utilizing photoetching and lithium niobate etching technologies;
s2: preparing a low-refractive-index dielectric material serving as an etching stop layer by using a deposition process in the sample prepared in the step S1;
s3: spin-coating a high-refractive-index polymer or depositing a high-refractive-index dielectric material or a high-refractive-index periodically-distributed dielectric material above the sample prepared in the step S2 to prepare a second waveguide core layer 5;
s4: etching the second waveguide core layer 5 on the sample prepared in the step S3 by using photolithography and etching processes to prepare a second waveguide 51 and a second tapered waveguide 52;
s5: preparing a low-refractive-index dielectric material for the sample prepared in the step S4 by using a deposition process or preparing a polymer material by using a spin coating process to serve as a cladding of the second waveguide core layer;
s6: and (4) performing end face cleavage or slicing and polishing on the sample prepared in the step (S5) to finish the preparation of the end face coupler.
Further, in an alternative embodiment, the low index of refraction medium includes silicon oxide, silicon oxynitride, and a polymer.
When the silicon oxide and the silicon oxynitride are used as low-refractive-index media to prepare the etching stop layer, the etching stop layer is prepared by a PECVD or ICP-CVD deposition process; when the polymer is used as a low refractive index medium to prepare the etching stop layer, the etching stop layer is prepared by a spin coating or spray coating process and is subjected to thermal curing or ultraviolet curing.
The same or similar reference numerals correspond to the same or similar parts;
the terms describing positional relationships in the drawings are for illustrative purposes only and should not be construed as limiting the patent;
it should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. An end face coupler based on coupling of an optical fiber and a lithium niobate waveguide is characterized by comprising a substrate (1), an insulating layer (2), a first flat plate layer (3), a first waveguide core layer (4) and a second waveguide core layer (5) which are sequentially arranged from bottom to top;
the first waveguide core layer (4) comprises a first waveguide (41) and a first tapered waveguide (42), one side of the first waveguide (41) is connected with one side of the first tapered waveguide (42), and the widths of the connected sides of the first tapered waveguide (42) and the first waveguide (41) are the same;
the second waveguide core layer (5) comprises a second waveguide (51) and a second tapered waveguide (52), one side edge of the second waveguide (51) is connected with one side edge of the second tapered waveguide (52), and the width of the side edge where the second tapered waveguide (52) is connected with the second waveguide (51) is the same;
the first tapered waveguide (42) and the second tapered waveguide (52) are arranged in a mutually reverse coincidence manner; the side of the second waveguide (51) far away from the second conical waveguide (52) is subjected to mode matching with an external optical fiber;
the insulating layer (2) is made of a low-refractive-index non-metal oxide material or a polymer, the first flat plate layer (3) and the first waveguide core layer (4) are made of thin-film lithium niobate materials, and the second waveguide core layer (5) is made of a material with a refractive index higher than that of the insulating layer (2) or a material with high and low refractive indexes distributed periodically.
2. The fiber-and-lithium niobate waveguide-based end-face coupler of claim 1, wherein the thickness of the first slab layer (3) is less than or equal to 250nm; the thickness of the first waveguide core layer (4) is equal to that of the first slab layer (3) or is within +/-100 nm of the thickness of the first slab layer (3); the thickness of the second waveguide core layer (5) is less than or equal to 8 μm.
3. The fiber-optic and lithium niobate waveguide-based end-face coupler of claim 2, wherein the first tapered waveguide (42) has a tip width less than or equal to 350nm, and the first waveguide (41) has a width less than 5 μm; the tip width of the second tapered waveguide (52) is less than or equal to 2 μm; the width of the second waveguide (51) is less than or equal to 10 [ mu ] m.
4. The fiber-optic and lithium niobate waveguide-based end-face coupler of claim 3, wherein the first tapered waveguide (42) and the second tapered waveguide (52) are equal in length and greater than or equal to 80 μm in length, or wherein an absolute value of a difference between the lengths of the first tapered waveguide (42) and the second tapered waveguide (52) is less than or equal to 50 μm.
5. The end-face coupler based on the coupling of the optical fiber and the lithium niobate waveguide as claimed in claim 1, wherein the second waveguide core layer (5) is a ridge waveguide structure, and the etching depth is greater than or equal to 70% of the thickness of the second waveguide (51).
6. The end-face coupler based on the coupling of the optical fiber and the lithium niobate waveguide as claimed in claim 1, wherein an etching stop layer made of a low-refractive-index medium is arranged between the first waveguide core layer (4) and the second waveguide core layer (5); the refractive index of the etching stop layer is lower than that of the thin film lithium niobate.
7. The end-face coupler based on the coupling of the optical fiber and the lithium niobate waveguide according to claim 1, wherein the upper surface of the second waveguide core layer (5) is covered with a cladding layer made of a low-refractive-index dielectric material or a polymer material; the upper surface of the first waveguide (41) is covered with a cladding made of a low-refractive-index dielectric material or a polymer material.
8. The end-face coupler based on optical fiber and lithium niobate waveguide coupling of any one of claims 1 to 7, wherein a side of the first waveguide (41) far away from the first tapered waveguide (42) is covered and provided with a polymer or low-refractive-index medium layer.
9. A method for preparing an end-face coupler based on optical fiber and lithium niobate waveguide coupling according to any one of claims 1 to 8, comprising the steps of:
s1: preparing a first waveguide (41) and a first tapered waveguide (42) on a thin-film lithium niobate wafer by utilizing photoetching and lithium niobate etching technologies;
s2: preparing a low-refractive-index dielectric material serving as an etching stop layer by using a deposition process in the sample prepared in the step S1;
s3: a second waveguide core layer (5) is prepared above the sample prepared in the step S2 by spin coating a high-refractive-index polymer or depositing a high-refractive-index dielectric material or a high-refractive-index dielectric material with periodic distribution;
s4: etching the second waveguide core layer (5) on the sample prepared in the step S3 by utilizing photoetching and etching processes to prepare a second waveguide (51) and a second tapered waveguide (52);
s5: preparing a low-refractive-index dielectric material for the sample prepared in the step S4 by using a deposition process or preparing a polymer material as a cladding of the second waveguide core layer by using a spin coating process;
s6: and (4) performing end face cleavage or slicing and polishing on the sample prepared in the step (S5) to finish the preparation of the end face coupler.
10. The method according to claim 9, wherein in step S2, the low refractive index medium comprises silicon oxide, silicon oxynitride, and a polymer;
when silicon oxide and silicon oxynitride are used as low-refractive-index media to prepare the etching stop layer, the etching stop layer is prepared by a PECVD or ICP-CVD deposition process;
when the polymer is used as a low-refractive-index medium to prepare the etching stop layer, the etching stop layer is prepared by a spin coating or spray coating process and is subjected to thermal curing or ultraviolet curing.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117348153A (en) * | 2023-12-05 | 2024-01-05 | 希烽光电科技(南京)有限公司 | Multilayer waveguide edge coupler |
| CN117452557A (en) * | 2023-12-22 | 2024-01-26 | 无锡芯光互连技术研究院有限公司 | 3D silicon-based optical end face coupler and preparation method thereof |
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2022
- 2022-11-29 CN CN202211511339.9A patent/CN115793140A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117348153A (en) * | 2023-12-05 | 2024-01-05 | 希烽光电科技(南京)有限公司 | Multilayer waveguide edge coupler |
| CN117348153B (en) * | 2023-12-05 | 2024-06-11 | 希烽光电科技(南京)有限公司 | Multilayer waveguide edge coupler |
| CN117452557A (en) * | 2023-12-22 | 2024-01-26 | 无锡芯光互连技术研究院有限公司 | 3D silicon-based optical end face coupler and preparation method thereof |
| CN117452557B (en) * | 2023-12-22 | 2024-03-08 | 无锡芯光互连技术研究院有限公司 | 3D silicon-based optical end face coupler and preparation method thereof |
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