CN117293157A - Gallium nitride-based full-color Micro-LED display module with high color purity and preparation method - Google Patents
Gallium nitride-based full-color Micro-LED display module with high color purity and preparation method Download PDFInfo
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Abstract
The invention discloses a gallium nitride-based full-color Micro-LED display module with high color purity and a preparation method thereof. The invention can improve the color purity and stability of the gallium nitride-based full-color Micro-LED display module.
Description
Technical Field
The invention relates to the field of semiconductor light-emitting devices, in particular to a gallium nitride-based full-color Micro-LED display module with high color purity and a preparation method thereof.
Background
Micro-LED display is an array display technology in which LEDs are scaled down to tens of micrometers or even a few micrometers in size, and pixels are integrated at high density. Micro-LEDs have the advantages of high brightness, wide color gamut, long service life, low energy consumption, quick response time and the like, have important application potential in display and visible light communication, and are regarded as the next generation display technology.
The full-color display of the gallium nitride-based Micro-LED is realized by using blue light gallium nitride-based Micro-LED, green light gallium nitride-based Micro-LED and red light gallium nitride-based Micro-LED as RGB three primary colors. However, the high In component In the quantum well of the gallium nitride-based Micro-LED is easily phase-separated, resulting In a wider half-width of the emission peak of the green gallium nitride-based Micro-LED and the red gallium nitride-based Micro-LED, which limits the Micro-LED display color gamut. In addition, when the working current density of the gallium nitride-based Micro-LED is increased due to the polarization property of the gallium nitride-based material, the phenomena of light-emitting peak movement (wave drift) and light-emitting peak half-width increase of the gallium nitride-based Micro-LED are caused, which are commonly called quantum confinement stark effect (QCSE effect), and seriously affect the stability of the full-color display of the gallium nitride-based Micro-LED.
Therefore, the realization of high-quality full-color display of gallium nitride-based Micro-LEDs requires the obtainment of gallium nitride-based green light Micro-LEDs with narrow half-width of the light emission peak and gallium nitride-based red light Micro-LEDs with narrow half-width of the light emission peak respectively, thereby realizing large color gamut and color purity. Meanwhile, the wave drift of the gallium nitride-based green light Micro-LED and the gallium nitride-based red light Micro-LED is required to be reduced, and the display stability is improved.
Disclosure of Invention
The first object of the present invention is to provide a gallium nitride-based full-color Micro-LED display module with high color purity.
The second object of the invention is to provide a preparation method of a gallium nitride-based full-color Micro-LED display module with high color purity.
The first object of the present invention is achieved by:
a gallium nitride-based full-color Micro-LED display module with high color purity is characterized in that: the LED display device comprises a driving substrate, a gallium nitride-based red, green and blue Micro-LED pixel array arranged on the driving substrate, and a dual-channel dielectric filter film directly covering the gallium nitride-based red, green and blue Micro-LED pixel array; the peak wavelength of luminescence of the gallium nitride-based red, green and blue Micro-LED pixel array is lambda respectively 1 ，λ 2 ，λ 3 The method comprises the steps of carrying out a first treatment on the surface of the The dual-channel dielectric filter film is at the wavelength lambda 1 、λ 2 The transmissivity is more than 60%; dielectric filter film at lambda 1 -20 nm~λ 1 -40 nm、λ 1 +20 nm~λ 1 +40 nm、λ 2 -20 nm~λ 2 -40 nm and lambda 2 +20 nm~λ 2 The reflectance in the +40 nm wavelength range is greater than 90%.
Further, the peak wavelength of light emission of gallium nitride-based red light Micro-LED pixel is 600 nm< λ 1 <700 nm, gallium nitride-based green light Micro-LED pixel luminescence peak wavelength 500 nm< λ 2 <560 nm, gallium nitride-based blue light Micro-LED pixel luminescence peak wavelength 430 nm< λ 3 <470 nm. Further, the full width at half maximum of the light emission peak of the gallium nitride-based green light Micro-LED pixel and the gallium nitride-based green light Micro-LED pixel penetrating through the dual-channel dielectric filter film is smaller than 30nm.
Further, the visible light band adjustable double-channel filter has a transmittance of more than 60% in a blue light 430 nm-470 nm band.
Preferably, the dual-channel dielectric filter film consists of a first dielectric film group A and a second dielectric film group B; the first dielectric film group A has a structure of (L 1 H 1 ) k1 (H 1 L 1 ) k1 ，L 1 Is a first low refractive index dielectric layer H 1 K1 is the number of cycles for the first high refractive index dielectric layer; the structure of the second dielectric film group B is H 2 (L 2 H 2 ) k2 (H 2 L 2 ) k2 H 2 ，L 2 Is a second low refractive index dielectric layer H 2 K2 is the number of cycles for the second high refractive index dielectric layer; wherein: the first dielectric film group A controls the position of the long wavelength channel and the second dielectric film group B controls the position of the short wavelength channel.
The second object of the present invention is achieved by:
a first preparation method of a gallium nitride full-color Micro-LED display module with high color purity is characterized by comprising the following steps: the method comprises the following steps:
(1) Sequentially growing an n-GaN layer, a multiple quantum well layer and a p-GaN layer on three silicon substrates by using an MOCVD technology to obtain three-color epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light;
(2) The epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light are respectively processed by adopting photoetching and ICP etching technologies to prepare Micro-LED arrays of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light;
(3) Preparing an n electrode on an n-GaN layer of a Micro-LED array of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light respectively by adopting a metal coating technology and a stripping technology, and preparing a p electrode on a p-GaN layer;
(4) Connecting a gallium nitride-based Micro-LED array with one color with a pre-designed driving substrate through a metal bonding process and removing the silicon substrate;
(5) Repeating the step (4) twice, respectively transferring the gallium nitride-based Micro-LED arrays with the other two colors onto a driving substrate and removing the silicon substrate to obtain a gallium nitride full-color Micro-LED display module;
(6) And (5) growing a double-channel dielectric filter film on the gallium nitride full-color Micro-LED display module obtained in the step (5) to obtain the gallium nitride full-color Micro-LED display module with high color purity.
Or, a second preparation method of a gallium nitride full-color Micro-LED display module with high color purity comprises the following steps:
(1) Growing an n-GaN layer, a multiple quantum well layer and a p-GaN layer on a substrate by using MOCVD technology to obtain an epitaxial wafer of a gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light Micro-LED array;
(2) Respectively processing epitaxial wafers of the gallium nitride-based blue light, the gallium nitride-based green light and the gallium nitride-based red light Micro-LED array by adopting photoetching and ICP etching technologies to expose the n-GaN layer table top;
(3) Preparing an n electrode on an n-GaN layer of a Micro-LED array of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light by adopting a metal coating technology and a stripping technology, and preparing a p electrode on a p-GaN layer;
(4) The epitaxial wafer of the Micro-LED array of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light is connected with a pre-designed driving substrate through a metal bonding process, and a silicon substrate is removed, so that the gallium nitride full-color Micro-LED display module is obtained;
(5) And (3) growing a double-channel dielectric filter film on the gallium nitride full-color Micro-LED display module obtained in the step (4) to obtain the gallium nitride full-color Micro-LED display module with high color purity.
The invention provides a gallium nitride full-color Micro-LED display module with high color purity and a preparation method thereof, and the gallium nitride full-color Micro-LED display module has the following beneficial effects:
the gallium nitride-based blue light Micro-LED, the gallium nitride-based green light Micro-LED and the gallium nitride-based red light Micro-LED are used as pixels for full-color display of the Micro-LED and are placed on a driving substrate to realize a full-color display module of the Micro-LED. A layer of double-channel dielectric filter film is placed on the gallium nitride-based full-color Micro-LED, and the dielectric filter film can filter light emitted by gallium nitride-based red light Micro-LED pixels and gallium nitride-based green light Micro-LED pixels at the same time, namely has a filtering effect on light in a green light wave band and a red light wave band, so that the half-width of light emitting peaks of the gallium nitride-based green light Micro-LED and the gallium nitride-based red light Micro-LED is narrowed to be smaller than 30nm, and meanwhile, the wave drift of the light emitting peaks of the gallium nitride-based green light Micro-LED and the gallium nitride-based red light Micro-LED along with the change of working current density is reduced, thereby improving the color purity and the stability of the gallium nitride-based full-color Micro-LED display.
Drawings
FIG. 1 is a schematic diagram corresponding to step (1) in the first preparation method provided by the invention;
FIG. 2 is a schematic diagram corresponding to step (2) in the first preparation method according to the present invention;
FIG. 3 is a schematic diagram corresponding to step (3) in the first preparation method provided by the present invention;
FIG. 4 is a schematic diagram corresponding to step (5) in the first preparation method according to the present invention;
FIG. 5 is a schematic diagram corresponding to step (6) in the first preparation method according to the present invention;
FIG. 6 is a flow chart of a gallium nitride-based full-color Micro-LED display module with high color purity and a second manufacturing method;
FIG. 7 is a schematic diagram of a reflection spectrum of a dual-channel dielectric filter film in a second preparation method according to the present invention;
FIG. 8 is a graph showing the spectrum of a GaN red LED light source as a function of operating current density;
FIG. 9 is a graph showing the spectrum of a GaN red LED light source after passing through a dual-channel dielectric filter film as a function of operating current density;
FIG. 10 is a graph showing the spectral peak wavelength of a gallium nitride red LED light source with or without a dual-channel dielectric filter film as a function of operating current density;
FIG. 11 is a graph showing the spectral full width at half maximum (FWHM) of a gallium nitride red LED light source with or without a dual-channel dielectric filter film as a function of operating current density;
FIG. 12 is a graph showing the spectrum of a GaN green LED light source as a function of operating current density;
FIG. 13 is a graph showing the spectrum of a GaN green LED light source after passing through a dielectric filter film as a function of operating current density;
FIG. 14 is a graph showing the spectral peak wavelength of a GaN green LED light source with or without a dual-channel dielectric filter film as a function of operating current density;
fig. 15 is a graph showing the change of the spectral full width at half maximum (FWHM) of a gallium nitride green LED light source with or without a dual-channel dielectric filter film according to the operating current density.
Description of the embodiments
In order to make the technical problems, technical solutions and advantages to be solved by the present invention more apparent, the following detailed description will be made with reference to specific embodiments.
Examples
The preparation method of the gallium nitride-based full-color Micro-LED display module with high color purity specifically comprises the following steps:
(1) Sequentially growing an n-GaN layer 2, a multiple quantum well layer 3 and a p-GaN layer 4 on three silicon substrates 1 by using an MOCVD technology to obtain three-color epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light, wherein the structure is shown in figure 1, the gallium nitride-based red light emission peak wavelength lambda 1 is 625 nm, the gallium nitride-based green light emission peak wavelength lambda 2 is 520 nm, and the gallium nitride-based blue light emission peak wavelength lambda 1 is 450 nm;
(2) The epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light are respectively processed by adopting photoetching and ICP etching technologies to prepare three-color Micro-LED arrays of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light, and the structures of the three-color Micro-LED arrays are shown in figure 2;
(3) Preparing a p electrode 5 on a p-GaN layer 4 of a Micro-LED array with three colors of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light by adopting an electron beam evaporation technology and a stripping technology, and preparing an n electrode 6 on an n-GaN layer 3, wherein the structure is shown in figure 3;
(4) Connecting a gallium nitride Micro-LED array with one color with a pre-designed driving substrate 7 through a metal bonding process and removing the silicon substrate 1;
(5) Repeating the step (4) twice, respectively transferring the gallium nitride-based Micro-LED arrays with the other two colors onto a driving substrate 7 and removing the silicon substrate 1 to obtain a gallium nitride full-color Micro-LED display module, wherein the structure is shown in figure 4;
(6) And (3) growing a dual-channel dielectric filter film 8 on the gallium nitride full-color Micro-LED display module obtained in the step (5) by using PECVD. The double-channel dielectric filter film 8 consists of two groups of dielectric films, namely a first dielectric film group A and a second dielectric film group B; the first dielectric film group A has a structure of (L 1 H 1 ) k1 (H 1 L 1 ) k1 L1 is the first low refractive index dielectric layer 101, H1 is the first high refractive index dielectric layer 102, and the number of cycles k1 is 6. The first low refractive index dielectric layer 101 is made of SiO 2 The thickness is 107 and nm, the material of the first high refractive index dielectric layer 102 is SiN x The thickness was 78 nm and the number of cycles k1 was 6. The structure of the second dielectric film group B is H 2 (L 2 H 2 ) k2 (H 2 L 2 ) k2 H 2 L2 is the second low refractive index dielectric layer 201, H2 is the second high refractive index dielectric layer 202, and k2 is the number of cycles. The second low refractive index dielectric layer 201 is made of SiO 2 The thickness is 89 nm, the second high refractive index dielectric layer 202 is made of SiN x The thickness is 65 nm, the cycle number K2 is 5, and the structure is shown in FIG. 5.
Examples
The preparation method of the gallium nitride-based full-color Micro-LED display module with high color purity specifically comprises the following steps:
(1) Growing an n-GaN layer, a multiple quantum well layer and a p-GaN layer on a silicon substrate by using MOCVD technology to obtain epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light Micro-LED arrays, wherein the structure of the epitaxial wafers is shown in fig. 6 (a);
(2) Processing epitaxial wafers of the gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light Micro-LED array by adopting photoetching and ICP etching technologies respectively to expose an n-GaN layer mesa, wherein the structure is shown in fig. 6 (b);
(3) Preparing an n electrode on an n-GaN layer of a gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light Micro-LED array by adopting an electron beam evaporation technology and a stripping technology, and preparing a p electrode on a p-GaN layer, wherein the structure is shown in fig. 6 (c);
(4) The epitaxial wafer of the gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light Micro-LED array is connected with a pre-designed driving substrate through a metal bonding process, and a silicon substrate is removed, so that a gallium nitride full-color Micro-LED display module is obtained, and the structure is shown in fig. 6 (d);
(5) Growing a double-channel dielectric filter film 8 on the gallium nitride full-color Micro-LED display module obtained in the step (4), wherein the double-channel dielectric filter film 8 consists of two groups of dielectric films, namely a first dielectric film group A and a second dielectric film group B; the first dielectric film group A has a structure of (L 1 H 1 ) k1 (H 1 L 1 ) k1 L1 is the first low refractive index dielectric layer 101, H1 is the first high refractive index dielectric layer 102, and the number of cycles k1 is 6. The first low refractive index dielectric layer 101 is made of SiO 2 The thickness is 107 and nm, the material of the first high refractive index dielectric layer 102 is SiN x The thickness was 78 nm and the number of cycles k1 was 6. The structure of the second dielectric film group B is H 2 (L 2 H 2 ) k2 (H 2 L 2 ) k2 H 2 L2 is the second low refractive index dielectric layer 201, H2 is the second high refractive index dielectric layer 202, and k2 is the number of cycles. The second low refractive index dielectric layer 201 is made of SiO 2 The thickness is 89 nm, the second high refractive index dielectric layer 202 is made of SiN x The thickness was 65 nm, the number of cycles K2 was 5, and the structure was as shown in FIG. 6 (e).
Examples
A dual-channel dielectric filter film 8 was grown on a transparent sapphire substrate by PECVD, and fig. 7 is a schematic reflection spectrum diagram of the dielectric filter film prepared in this embodiment, where the dual-channel dielectric filter film 8 has dual filter channels, the filter channels have a transmittance of 625 nm of 87% and a full width at half maximum of 625 nm of 9 nm; the transmissivity of the filter channel 520 nm is 75%, and the full width half maximum of the filter channel 520 nm is 10 nm; wherein the reflectance is greater than 90% at wavelengths in the range of 468 nm-514 nm,538 nm-608-nm and 648 nm-696-nm.
Fig. 8 is a schematic diagram of the change of the spectrum of the gallium nitride red LED light source with the working current density, fig. 9 is a schematic diagram of the change of the spectrum of the gallium nitride red LED light source with the working current density after passing through the dual-channel dielectric filter film 8, fig. 10 is a schematic diagram of the change of the spectrum peak wavelength of the gallium nitride red LED light source with the working current density, and fig. 11 is a schematic diagram of the change of the spectrum full width at half maximum (FWHM) of the gallium nitride red LED light source with the dual-channel dielectric filter film with the working current density. The comparison of the control sample shows that the peak wavelength of the red LED light source is stabilized at 626 nm-627 nm after the red LED light source passes through the dual-channel filter in the same working current density change, and is far smaller than the fluctuation 588 nm-669 nm of the control sample, and meanwhile, the full width at half maximum (FWHM) is only 12-18 nm, and is far smaller than the full width at half maximum (FWHM) 56 nm-69 nm of the control sample.
Fig. 12 is a schematic diagram showing the change of the spectrum of the gallium nitride green LED light source with the working current density, fig. 13 is a schematic diagram showing the change of the spectrum of the gallium nitride green LED light source with the working current density after passing through the dual-channel dielectric filter film, fig. 14 is a schematic diagram showing the change of the spectrum peak wavelength of the gallium nitride green LED light source with the dual-channel dielectric filter film with the working current density, and fig. 15 is a schematic diagram showing the change of the spectrum full width at half maximum (FWHM) of the gallium nitride green LED light source with the dual-channel dielectric filter film with the working current density. The comparison of the control sample shows that the peak wavelength of the green LED light source is stabilized at 521 nm-525 nm after passing through the dual-channel filter in the same working current density change, and is far smaller than the fluctuation 515 nm-543 nm of the control sample, and the full width at half maximum (FWHM) is only 12 nm-16 nm, and is far smaller than the full width at half maximum (FWHM) 30 nm-41 nm of the control sample.
Through experimental comparison, a layer of double-channel dielectric filter film is grown and prepared on the gallium nitride-based full-color Micro-LED, the double-channel dielectric filter film is provided with double filter channels, and light emitted by gallium nitride-based green light Micro-LED pixels and gallium nitride-based red light Micro-LED pixels can be filtered simultaneously, so that the half-width of the light emitting peak of the gallium nitride-based green light Micro-LED pixels and the light emitting peak of the gallium nitride-based red light Micro-LED pixels are narrowed, and meanwhile, the wavelength drift of the light emitting peak of the gallium nitride-based green light Micro-LED pixels and the light emitting peak of the gallium nitride-based red light Micro-LED pixels along with the change of working current density is small, and the display stability is improved.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A gallium nitride-based full-color Micro-LED display module with high color purity is characterized in that: the LED display device comprises a driving substrate, a gallium nitride-based red, green and blue Micro-LED pixel array arranged on the driving substrate, and a dual-channel dielectric filter film directly covering the gallium nitride-based red, green and blue Micro-LED pixel array; the peak wavelength of luminescence of the gallium nitride-based red, green and blue Micro-LED pixel array is lambda respectively 1 ，λ 2 ，λ 3 The method comprises the steps of carrying out a first treatment on the surface of the The dual-channel dielectric filter film is at the wavelength lambda 1 、λ 2 The transmissivity is more than 60%; dielectric filter film at lambda 1 -20 nm~λ 1 -40 nm、λ 1 +20 nm~λ 1 +40 nm、λ 2 -20 nm~λ 2 -40 nm and lambda 2 +20 nm~λ 2 The reflectance in the +40 nm wavelength range is greater than 90%.
2. The gallium nitride-based full-color Micro-LED display module with high color purity according to claim 1, wherein: gallium nitride-based red light Micro-LED pixel luminescence peak wavelength 600 nm< λ 1 <700 nm, gallium nitride-based green light Micro-LED pixel luminescence peak wavelength 500 nm< λ 2 <560 nm, gallium nitride-based blue light Micro-LED pixel luminescence peak wavelength 430 nm< λ 3 <470 nm。
3. The gallium nitride-based full-color Micro-LED display module with high color purity according to claim 1, wherein: the full width at half maximum of the luminescence peak of the gallium nitride-based green light Micro-LED pixel and the gallium nitride-based green light Micro-LED pixel penetrating through the dual-channel dielectric filter film is smaller than 30nm.
4. The gallium nitride-based full-color Micro-LED display module with high color purity according to claim 1, wherein: the visible light wave band adjustable double-channel filter has the transmittance of more than 60% in the blue light wave band of 430 nm-470 nm.
5. The gallium nitride-based full-color Micro-LED display module with high color purity according to claim 1, wherein: the double-channel dielectric filter film consists of a first dielectric film group A and a second dielectric film group B; the first dielectric film group A has a structure of (L 1 H 1 ) k1 (H 1 L 1 ) k1 ，L 1 Is a first low refractive index dielectric layer H 1 K1 is the number of cycles for the first high refractive index dielectric layer; the structure of the second dielectric film group B is H 2 (L 2 H 2 ) k2 (H 2 L 2 ) k2 H 2 ，L 2 Is a second low refractive index dielectric layer H 2 K2 is the number of cycles for the second high refractive index dielectric layer; wherein: the first dielectric film group A controls the position of the long wavelength channel and the second dielectric film group B controls the position of the short wavelength channel.
6. The method for manufacturing a gallium nitride-based full-color Micro-LED display module with high color purity according to claim 1, wherein: the method comprises the following steps:
(1) Sequentially growing an n-GaN layer, a multiple quantum well layer and a p-GaN layer on three silicon substrates by using an MOCVD technology to obtain three-color epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light;
(2) The epitaxial wafers of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light are respectively processed by adopting photoetching and ICP etching technologies to prepare Micro-LED arrays of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light;
(3) Preparing an n electrode on an n-GaN layer of a Micro-LED array of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light respectively by adopting a metal coating technology and a stripping technology, and preparing a p electrode on a p-GaN layer;
(4) Connecting a gallium nitride-based Micro-LED array with one color with a pre-designed driving substrate through a metal bonding process and removing the silicon substrate;
(5) Repeating the step (4) twice, respectively transferring the gallium nitride-based Micro-LED arrays with the other two colors onto a driving substrate and removing the silicon substrate to obtain a gallium nitride full-color Micro-LED display module;
(6) And (5) growing a double-channel dielectric filter film on the gallium nitride full-color Micro-LED display module obtained in the step (5) to obtain the gallium nitride full-color Micro-LED display module with high color purity.
7. The method for manufacturing a gallium nitride-based full-color Micro-LED display module with high color purity according to claim 1, wherein: the method comprises the following steps:
(1) Growing an n-GaN layer, a multiple quantum well layer and a p-GaN layer on a substrate by using MOCVD technology to obtain an epitaxial wafer of a gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light Micro-LED array;
(2) Respectively processing epitaxial wafers of the gallium nitride-based blue light, the gallium nitride-based green light and the gallium nitride-based red light Micro-LED array by adopting photoetching and ICP etching technologies to expose the n-GaN layer table top;
(3) Preparing an n electrode on an n-GaN layer of a Micro-LED array of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light by adopting a metal coating technology and a stripping technology, and preparing a p electrode on a p-GaN layer;
(4) The epitaxial wafer of the Micro-LED array of gallium nitride-based blue light, gallium nitride-based green light and gallium nitride-based red light is connected with a pre-designed driving substrate through a metal bonding process, and a silicon substrate is removed, so that the gallium nitride full-color Micro-LED display module is obtained;
(5) And (3) growing a double-channel dielectric filter film on the gallium nitride full-color Micro-LED display module obtained in the step (4) to obtain the gallium nitride full-color Micro-LED display module with high color purity.
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2023
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