CN117293070A

CN117293070A - Buffer chamber, substrate processing apparatus, and substrate processing method

Info

Publication number: CN117293070A
Application number: CN202310058979.7A
Authority: CN
Inventors: 林俊铉; 崔峻荣; 张瑛珍; 朴贵秀; 李暎熏
Original assignee: Semes Co Ltd
Current assignee: Semes Co Ltd
Priority date: 2022-06-24
Filing date: 2023-01-16
Publication date: 2023-12-26
Also published as: JP2024002883A; US20230415191A1; KR20240001738A

Abstract

The present inventive concept provides a buffer chamber, a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a batch processing bath for processing substrates in a batch manner; a unitary processing chamber for processing the substrate in a unitary manner; and a buffer chamber positioned on a transfer path of the substrate transferred between the batch type processing chamber and the unitary type processing chamber and supplying a liquid for maintaining a wet state of the substrate.

Description

Buffer chamber, substrate processing apparatus, and substrate processing method

Cross Reference to Related Applications

The present application claims priority and rights of korean patent application No. 10-2022-007421 filed 24 months 2022, the entire contents of which are incorporated herein by reference.

Technical Field

Embodiments of the inventive concept described herein relate to a buffer chamber, a substrate processing apparatus, and a substrate processing method.

Background

In order to manufacture a semiconductor element, a desired pattern is formed on a substrate (such as a wafer) through various processes such as a photolithography process, an etching process, an ashing process, an ion implantation process, and a thin film deposition process on the substrate. Various treatment fluids and treatment gases are used in each process and particles and process byproducts are produced during the process. In order to remove thin films, particles, and process byproducts on the substrate from the substrate, a liquid treatment process for the substrate is performed before and after each process. In a typical liquid treatment process, the substrate is treated with chemicals and rinse solutions and then dried. In the liquid treatment process, siN on the substrate may be stripped.

A substrate processing method of processing a substrate with a processing liquid such as a chemical and/or a rinse liquid may be classified into a batch processing method of collectively processing a plurality of substrates in a vertical posture and a single-type processing method of processing substrates in a horizontal posture one by one.

In a batch processing method for collectively processing a plurality of substrates, the plurality of substrates are collectively immersed in a processing bath (processing bath) in a vertical posture, and a chemical or a rinse liquid is stored in the processing bath to perform a substrate process. For this reason, the large-scale processing of substrates is excellent, and the processing quality between each substrate is uniform. However, since the batch type processing method is immersed in a vertical posture, if a pattern formed on a substrate has a high aspect ratio, a pattern tilting phenomenon may occur in the pattern formed on the substrate during lifting the substrate from a processing bath. Furthermore, if a plurality of substrates are simultaneously exposed to air and drying is not performed for a short time, watermarks may be generated in some substrates exposed to air.

On the other hand, in the case of a single processing method for processing substrates one by one, substrate processing is performed while supplying chemicals or rinse solutions to a single substrate rotating in a horizontal posture. Furthermore, in the unitary processing method, the risk of the pattern tilting phenomenon is low because the transferred substrate maintains a horizontal posture, and the risk of the watermark is low because the substrates are processed one by one and the processed substrates are immediately dried or liquid-processed. However, in the case of the single type processing method, the large-scale processing of substrates is poor, and the processing quality between each substrate is relatively uneven as compared with the batch type processing method. Further, if the substrate is rotated and centrifugally dried, there is a concern that the pattern formed on the substrate may collapse if the pattern formed on the substrate has a high aspect ratio.

Disclosure of Invention

Embodiments of the inventive concept provide a buffer chamber for effectively processing a substrate, a substrate processing apparatus and a substrate processing method.

Embodiments of the inventive concept provide a buffer chamber, a substrate processing apparatus, and a substrate processing method for mass production for improving substrate processing.

Embodiments of the inventive concept provide a buffer chamber, a substrate processing apparatus, and a substrate processing method for relatively increasing uniformity of processing quality between each substrate.

Embodiments of the inventive concept provide a buffer chamber, a substrate processing apparatus, and a substrate processing method for minimizing a tilting phenomenon generated on a pattern formed on a substrate.

Embodiments of the inventive concept provide a buffer chamber for efficiently processing a substrate having a pattern formed thereon with a high aspect ratio, a substrate processing apparatus, and a substrate processing method.

Embodiments of the inventive concept provide a buffer chamber, a substrate processing apparatus, and a substrate processing method for minimizing drying of a top surface of a substrate on which a pattern is formed during a process in which a substrate that has been processed in a batch manner is transferred to a single process chamber.

Embodiments of the inventive concept provide a buffer chamber, a substrate processing apparatus, and a substrate processing method for minimizing contamination of a hand for transferring a substrate during a process in which a substrate, which has been processed in a single manner, is transferred to a single process chamber.

Embodiments of the inventive concept provide a buffer chamber, a substrate processing apparatus, and a substrate processing method for minimizing contamination of a hand of a transfer robot for transferring a substrate, on which batch processing is performed on a top surface, so that a thin film is formed on the substrate by a wetting liquid in a process of transferring the substrate to a chamber performing a single process, thereby preventing natural drying, and a bottom surface of the substrate is cleaned to perform the batch processing.

Technical objects of the inventive concept are not limited to the above technical objects, and other technical objects not mentioned will become apparent to those skilled in the art from the following description.

The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes: a batch processing bath for processing substrates in a batch manner; a unitary processing chamber for processing the substrate in a unitary manner; and a buffer chamber positioned on a transfer path of the substrate transferred between the batch type processing bath and the unitary type processing chamber and supplying a liquid for maintaining a wet state of the substrate.

In an embodiment, the buffer chamber comprises: a chuck for supporting and rotating a substrate; and a liquid supply unit for supplying liquid to the substrate supported and rotated on the chuck.

In an embodiment, the liquid supply unit includes: a first liquid supply unit configured to supply a first liquid to a top surface of a substrate supported on the chuck; and a second liquid supply unit configured to supply a second liquid to a bottom surface of the substrate supported on the chuck.

In an embodiment, the second liquid supply unit is configured to supply a second liquid having a higher volatility than the first liquid supplied by the first liquid supply unit.

In an embodiment, the second liquid supply unit is configured to supply a second liquid that is isopropyl alcohol (isopropyl alcohol, IPA).

In an embodiment, the first liquid supply unit is configured to supply a first liquid, which is water.

In an embodiment, the substrate processing apparatus further includes a controller configured to control the buffer chamber, and wherein the controller controls the buffer chamber such that a rotation speed of the chuck becomes 300RPM to 500RPM in a case where the liquid is supplied from the liquid supply unit.

In an embodiment, the substrate processing apparatus further comprises a controller configured to control the buffer chamber and the unitary processing chamber, and wherein the controller controls the buffer chamber and the unitary processing chamber such that a processing time of the substrate in the buffer chamber is shorter than a processing time of the substrate in the unitary processing chamber.

In an embodiment, the substrate processing apparatus further includes a posture-changing processing bath positioned between the batch-type processing bath and the buffer chamber, and wherein the liquid stored in the posture-changing processing bath is the same liquid as the liquid supplied by the liquid supply unit.

In an embodiment, a unitary processing chamber comprises: a unitary liquid processing chamber for processing a substrate by supplying a processing liquid to the substrate; and a unitary drying chamber for performing a drying process on the substrate, and wherein the apparatus further comprises a transfer robot for transferring the substrate between the unitary liquid processing chamber, the unitary drying chamber, and the buffer chamber.

In an embodiment, a transfer robot includes: a first hand; a second hand mounted at a lower elevation than the first hand; and a third hand mounted at a lower elevation than the second hand.

In an embodiment, the substrate processing apparatus further comprises a controller configured to control the transfer robot, and wherein the controller controls the transfer robot such that the first hand is used in the case of transferring the substrate dry-processed at the unitary drying chamber, the third hand is used in the case of transferring the substrate wet at the buffer chamber, and the second hand is used in the case of transferring the substrate from the unitary liquid processing chamber to the unitary drying chamber.

In an embodiment, the substrate processing apparatus further includes a controller configured to control the buffer chamber, and wherein the controller controls the buffer chamber such that the first liquid starts to be supplied from the first liquid supply unit and the second liquid starts to be supplied from the second liquid supply unit after a set time elapses.

The present inventive concept provides a buffer chamber. The buffer chamber includes: a chuck for supporting and rotating a substrate; a first liquid supply unit configured to supply a first liquid to a first surface of a substrate supported at a chuck; and a second liquid supply unit configured to supply a second liquid to a second surface of the substrate supported at the chuck, the second liquid having a higher volatility than the first liquid, the second surface being different from the first surface.

In an embodiment, the chuck is controlled by the control unit to rotate at a speed of about 300RPM to about 500 RPM.

In an embodiment, the buffer chamber further comprises: a treatment cup for recovering the first liquid and the second liquid; and a lift/lower driver for lifting and lowering the processing cup, and wherein the processing cup defines at least two recovery paths that are constituted by a plurality of cups and recover different kinds of liquids, and the lift/lower driver is configured to lift and lower the processing cup to recover the first liquid through any one of the recovery paths and to recover the second liquid through the other one of the recovery paths.

The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes: a first process unit for processing substrates in a batch mode; a second process unit for processing the substrate in a single manner; and a controller, wherein the first process unit comprises: a batch type processing bath for processing a substrate in a vertical posture, and the second process processing unit includes: a unitary liquid processing chamber for liquid processing a substrate by supplying a processing liquid to a rotating substrate; a unitary drying chamber for performing a drying process on a substrate by supplying a supercritical fluid to the substrate; a buffer chamber for supplying a liquid to the substrate so that a wet state of the substrate can be maintained; and a transfer robot for transferring the substrate between the buffer chamber, the unitary liquid processing chamber, and the unitary drying chamber.

In an embodiment, the first process treatment unit comprises: a posture-changing processing bath having a storage space for storing a liquid, and positioning a support member for supporting the substrate in a vertical posture in the storage space at the storage space, the posture-changing processing bath being for changing the substrate in the vertical posture to a horizontal posture; a posture changing robot having a hand and an arm for moving the hand, the posture changing robot being for changing a posture of the substrate from a vertical posture to a horizontal posture; and wherein the buffer chamber is positioned at a location that receives the substrate removed from the attitude change processing bath by the attitude change robot.

In an embodiment, the buffer chamber comprises: a chuck for supporting and rotating a substrate; a first liquid supply unit configured to supply a first liquid to a top surface of a substrate supported on a chuck; and a second liquid supply unit configured to supply a second liquid to a bottom surface of the substrate supported on the chuck, the second liquid having a higher volatility than the first liquid.

In an embodiment, the substrate processing apparatus further comprises a plurality of unitary liquid processing chambers, and wherein the plurality of unitary liquid processing chambers are mounted stacked on top of each other, and the buffer chamber is mounted at a higher position than the unitary liquid processing chamber mounted at the bottom of the plurality of unitary liquid processing chambers and at a lower position than the unitary liquid processing chamber mounted at the top of the plurality of unitary liquid processing chambers.

The present inventive concept provides a substrate processing method. The substrate processing method includes: performing liquid treatment on the plurality of substrates in the vertical posture; changing the posture of the substrate on which the liquid treatment has been performed from the vertical posture to the horizontal posture; maintaining a wet state of the substrate by supplying a wetting liquid to the substrate whose posture has been changed; and performing a unitary process on one substrate on which the horizontal posture maintaining the wet state has been performed.

In an embodiment, the chuck supports and rotates the substrate while maintaining a wet state of the substrate, and a wetting liquid is supplied to the substrate supported and rotated on the chuck.

In an embodiment, while maintaining a wet state of the substrate, a wetting liquid is supplied to a top surface of the substrate, and a cleaning liquid of a different type from the wetting liquid is supplied to a bottom surface of the substrate.

In embodiments, the cleaning liquid is a liquid having a higher volatility than the wetting liquid.

In an embodiment, the wetting liquid is a liquid comprising water and the cleaning liquid is a liquid comprising isopropyl alcohol (IPA).

In an embodiment, the supply of the cleaning liquid is performed after the start of the supply of the wetting liquid and after the elapse of the set time.

In an embodiment, the substrate processing method further comprises: the substrate on which the maintenance of the wet state of the substrate is performed is transferred to a unitary processing chamber in which a unitary process of one substrate is performed, and wherein a transfer robot that performs transfer of the substrate has a plurality of hands, and transfer of the substrate is performed by a hand positioned at a bottom of the plurality of hands by transferring the substrate to the unitary processing chamber.

In an embodiment, the time for performing maintenance of the wet state of the substrate is shorter than the time for processing one substrate in a single process.

The present inventive concept provides a substrate processing method. The substrate processing method includes: treating the substrate in the first chamber by supplying a first liquid to the first surface of the substrate and by supplying a second liquid to the second surface of the substrate, the second liquid having a higher volatility than the first liquid; removing the substrate from the first chamber while supporting the second surface of the substrate by the hand of the transfer robot; and feeding the substrate taken out from the first chamber into a second chamber different from the first chamber.

In an embodiment, the substrate is rotated with the first liquid and the second liquid supplied to the first surface.

In an embodiment, a liquid film of the first liquid is formed on the first surface in a case where the substrate is transferred by the transfer robot.

In an embodiment, the first liquid is a wetting liquid for wetting the top surface of the substrate and the second liquid is an organic solvent for cleaning the bottom surface of the substrate.

In an embodiment, the first liquid is deionized water and the second liquid is isopropyl alcohol (IPA).

In an embodiment, the first chamber is a buffer chamber for temporarily storing a substrate and the second chamber is a unitary processing chamber for processing a substrate in a unitary manner.

In an embodiment, the second chamber is a unitary liquid processing chamber for processing a substrate by supplying an organic solvent to the first surface of the substrate.

In one embodiment, the second chamber is a unitary drying chamber for drying a substrate by delivering a processing fluid in a supercritical state to the substrate.

In an embodiment, after processing the substrate in a batch processing bath, the substrate is fed into the first chamber.

In an embodiment, after processing a substrate in a batch type processing bath, the posture of the substrate is changed from a vertical posture to a horizontal posture and the substrate is fed into the first chamber.

In an embodiment, the posture change of the substrate is performed with the substrate immersed in a posture change treatment bath containing the same liquid as the first liquid.

According to embodiments of the inventive concept, a substrate can be effectively processed.

According to the embodiments of the inventive concept, mass production of substrate processing can be improved.

According to the embodiments of the inventive concept, uniformity of processing quality between each substrate can be increased.

According to the embodiments of the inventive concept, the possibility of generating a watermark on a substrate can be minimized.

According to embodiments of the inventive concept, a tilting phenomenon of a pattern formed on a substrate can be minimized.

According to the embodiments of the inventive concept, a substrate having a pattern formed thereon with a high aspect ratio can be efficiently processed.

According to embodiments of the inventive concept, it is possible to minimize drying of a top surface of a substrate on which a pattern is formed during a process in which a substrate that has been processed in a batch manner is transferred to a single process chamber.

According to embodiments of the inventive concept, contamination of a hand that transfers a substrate during a process of transferring a substrate processed in a batch manner to a single chamber can be minimized.

According to embodiments of the inventive concept, it is possible to minimize contamination of a hand of a transfer robot for transferring a substrate, on which batch processing is performed on a top surface, in a process of transferring the substrate to a chamber performing a single process, so that a thin film is formed on the substrate by a wetting liquid, thereby preventing natural drying, and a bottom surface of the substrate is cleaned to perform the batch processing.

The effects of the inventive concept are not limited to the above-described effects, and other effects not mentioned will become apparent to those skilled in the art from the following description.

Drawings

The above and other objects and features will become apparent by reference to the following description of the drawings, in which like reference numerals refer to like parts throughout the various views unless otherwise specified, and in which:

fig. 1 schematically illustrates a substrate processing apparatus according to an embodiment of the inventive concept, as viewed from above.

Fig. 2 shows any one of the batch processing baths of fig. 1.

Fig. 3 shows the posture-changing processing bath of fig. 1.

Fig. 4 schematically illustrates the posture changing manipulator of fig. 1.

Fig. 5 shows the hand of fig. 4.

Fig. 6 schematically illustrates an arrangement of the unitary liquid handling chamber and buffer chamber of fig. 1.

Fig. 7 schematically illustrates the buffer chamber of fig. 6.

Fig. 8 schematically illustrates the first transfer robot of fig. 1.

Fig. 9 schematically illustrates the unitary liquid processing chamber of fig. 1.

Fig. 10 schematically illustrates the unitary drying chamber of fig. 1.

Fig. 11 is a flowchart illustrating a substrate processing method according to an embodiment of the inventive concept.

Fig. 12 and 13 show that the posture changing manipulator changes the posture of the substrate from the vertical posture to the horizontal posture in the second posture changing step of fig. 11.

Fig. 14 shows a posture changing manipulator performing the first wetting step of fig. 11.

Fig. 15 is a top view showing a liquid supply member that supplies a wetting liquid in the first wetting step of fig. 11.

Fig. 16 is a side view showing a liquid supply member that supplies a wetting liquid in the first wetting step of fig. 11.

Fig. 17 shows a buffer chamber performing the second wetting step of fig. 11.

Fig. 18 is a graph schematically showing an embodiment of supply on time and supply off time of the first liquid and the second liquid supplied to the substrate when the second wetting step of fig. 17 is performed.

Fig. 19 is a graph schematically showing another embodiment of supply on-time and supply off-time of the first liquid and the second liquid supplied to the substrate when the second wetting step of fig. 17 is performed.

Fig. 20 shows a hand according to another embodiment of the inventive concept.

Fig. 21 is a top view showing the liquid supply member of fig. 20 that supplies a wetting liquid to a substrate.

Fig. 22 illustrates a posture changing manipulator according to another embodiment of the inventive concept.

Fig. 23 is a schematic view of a substrate processing apparatus according to another embodiment of the inventive concept, as viewed from above.

Fig. 24 is a schematic view of a substrate processing apparatus according to another embodiment of the inventive concept, as viewed from above.

Fig. 25 is a schematic view of a substrate processing apparatus according to another embodiment of the inventive concept, as viewed from above.

Fig. 26 is a graph schematically showing another embodiment of supply on time and supply off time of the first liquid and the second liquid supplied to the substrate when the second wetting step of fig. 17 is performed.

Fig. 27 is a graph schematically showing another embodiment of supply on time and supply off time of the first liquid and the second liquid supplied to the substrate when the second wetting step of fig. 17 is performed.

Detailed Description

The inventive concept may be variously modified and may take various forms, and specific embodiments thereof will be shown in the drawings and will be described in detail. However, the embodiments according to the present inventive concept are not intended to be limited to the specifically disclosed forms, and it should be understood that the present inventive concept includes all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present inventive concept. In the description of the present inventive concept, detailed descriptions of related known techniques may be omitted when the essence of the present inventive concept may be made unclear.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the inventive concepts. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes," and/or "including" when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Furthermore, the term "embodiment" is intended to refer to an embodiment or description.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present inventive concept.

It will be understood that when an element or layer is referred to as being "on," "connected to," "coupled to" or "covering" another element or layer, it can be directly on, connected to, coupled to or covering the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. Other terms such as "between," "adjacent," "near," and the like should be construed in the same manner.

Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. Terms such as those defined in commonly used dictionaries should be interpreted as conforming to the context of the relevant art and not being ideal or excessively formal unless clearly defined in this application.

Further, a configuration of transferring the substrate W described later (for example, a transfer unit or a transfer robot described later) may be referred to as a transfer module.

Hereinafter, embodiments of the inventive concept will be described with reference to fig. 1 to 25.

Fig. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the inventive concept, as viewed from above.

Referring to fig. 1, a substrate processing apparatus 10 according to an embodiment of the inventive concept may include a first process processing unit 100, a second process processing unit 200, and a controller 600. The first and second process units 100 and 200 may be arranged in the first direction X when viewed from above. Hereinafter, a direction perpendicular to the first direction X when viewed from above is referred to as a second direction Y, and a direction perpendicular to the first direction X and the second direction Y is referred to as a third direction Z.

The first process treatment unit 100 may collectively perform liquid treatment on a plurality of substrates W in a batch manner. For example, the first process processing unit 100 may commonly clean a plurality of substrates W in a batch manner. The first process treatment unit 100 may simultaneously treat a plurality of substrates W in a vertical posture (the top or bottom surface of the substrates W is parallel to a direction perpendicular to the ground).

The first process processing unit 100 may include a first load port unit 110, an index chamber 120, a transfer unit 130, a batch processing unit 140, and an attitude change part 150.

The first load port unit 110 may include at least one load port. The transfer container F in which at least one substrate W is stored may be placed on the load port of the first load port unit 110. A plurality of substrates W may be stored in the transfer container F. For example, 25 substrates may be stored in the transfer container F. The transport container F may be referred to as a cassette, a pod FOD, a FOUP, or the like. The transfer container F may be loaded onto the first load port unit 110 by a container transfer device. The substrates W stored in the transfer container F placed in the first load port unit 110 may be unprocessed substrates W. The untreated substrate W may be, for example, an untreated substrate W, or a substrate W that has been partially treated but requires liquid treatment.

Further, only the container F in which the unprocessed substrates W are stored may be placed on the first load port unit 110. That is, the first load port unit 110 may be used only to load the substrates W to be processed.

The first load port unit 110 may be coupled to the index chamber 120. The index chamber 120 and the first load port unit 110 may be arranged in the second direction Y. The first index chamber 120 may include an index robot 122 and an attitude change unit 124. The index robot 122 may take out unprocessed or processed substrates W from the containers F mounted on the first load port unit 110. The first transfer robot 122 may take out the substrate W from the container F and transfer the substrate W into the storage container C provided in the first index chamber 120. The first transfer robot 122 may have an arrangement hand (alignment hand) capable of simultaneously clamping and transferring a plurality of substrates W (e.g., 25 substrates).

The storage container C may have a substantially cylindrical shape. The storage container C may have a storage space therein. A plurality of substrates W may be stored in the storage space of the storage container C. For example, 50 substrates W may be stored in the storage space of the storage container C. The storage container C may have a cylindrical shape in which at least two or more surfaces of the storage container C are open. A support member for supporting/clamping the substrate W may be provided in the storage space of the storage container C.

If the substrates W taken out of the transfer container F are completely brought into the storage container C, the storage container C may be fed into the posture changing unit 124 disposed in the index chamber 120 by a not-shown transfer device (e.g., a transfer rail or a linear motor guide). The posture changing unit 124 may rotate the storage container C. For example, the posture changing unit 124 may rotate the storage container C such that the open portion of the storage container C faces upward. If the open portion of the storage container C rotates to face the top, the substrates W stored in the storage container C may be changed from a horizontal posture (a posture in which the top and bottom surfaces of the substrates W are horizontal to the ground) to a vertical posture. The horizontal posture may refer to a top surface (e.g., a patterned surface) of the substrate W being parallel to an X-Y plane (i.e., a ground surface), and the vertical posture may refer to a top surface of the substrate W being parallel to an X-Z plane or a Y-Z plane (i.e., a surface perpendicular to a ground surface).

The transfer unit 130 may include a first transfer unit 132 and a second transfer unit 134, the first transfer unit 132 transferring the substrate W between the index chamber 120 and the batch type processing unit 140, and the second transfer unit 134 transferring the substrate W between the batch type processing unit 140 and a posture changing part 150 (to be described later).

The first transfer unit 132 may include a guide rail extending in the first direction X and a hand configured to transfer a plurality of substrates W at a time. The first transfer unit 132 may clamp the substrate W whose posture has been changed in the posture changing unit 124 and transfer the clamped substrate W to the batch processing unit 140. For example, the first transfer unit 132 may transfer the substrate W, the posture of which has been changed in the posture changing unit 124, to any selected one of the batch processing baths 141-B1 to 143-B2 of the batch processing unit 140. For example, the first transfer unit 132 may transfer the substrate W, of which the posture has been changed in the posture changing unit 124, to the 1-1 batch type processing bath 141-B1.

The second transfer unit 134 may include a guide rail extending in the first direction X and a hand configured to transfer a plurality of substrates W at a time. The second transfer unit 134 may be configured to transfer the substrate W between the first, second, and third batch processing units 141, 142, and 143 provided to the batch processing unit 140. Further, the second transfer unit 134 may be configured to transfer the substrate W between the batch type processing unit 140 and the posture changing part 150.

Further, when viewed from above, the position having the substrates W whose postures are changed by the posture changing unit 124 and stored in the storage container C and the position of the substrates W stored in the batch-type processing bath of the batch-type processing unit 140 may be arranged side by side in the first direction X.

Further, the substrates W stored in the batch-type processing baths 141-B1 to 143-B2 of the batch-type processing unit 140 and the substrates W stored in the posture-changing processing bath 151 of the posture-changing section 150 may be arranged side by side in the first direction X when viewed from above. Further, the substrates W stored in the batch-type processing baths 141-B1 to 143-B2 of the batch-type processing unit 140 may be arranged side by side in the first direction X when viewed from above. In other words, the support members 141-B1-6 of each batch-type processing bath 141-B1 to 141-B2 and the support member 153 of the posture-changing processing bath 151 may be arranged side by side in the first direction X when viewed from above.

The batch type processing unit 140 may perform liquid processing on a plurality of substrates W at a time. The batch type processing unit 140 may clean a plurality of substrates W at a time using the processing liquid. The batch type processing unit 140 may perform liquid processing on a plurality of substrates W at a time using a processing liquid. The process fluid used in the batch processing unit 140 may be a chemical and/or a rinse fluid. For example, the chemical may be a chemical having strong acid or strong base properties. Furthermore, the rinse liquid may be pure water. For example, the chemicals may be suitably selected among Ammonia-hydrogen peroxide mixtures (Ammonia-Hydrogen Peroxide, APM), hydrochloride peroxide mixtures (Hydrochloride Peroxide Mix, HPM), hydrofluoric acid (Hydrofluoric acid, FPM), hydrofluoric acid (hydrogen peroxide mixtures), diluted hydroxide mixtures (Diluted Hydrooxide Mix, DHF), siN removal chemicals, chemicals including phosphoric acid, chemicals including sulfuric acid, and the like. The rinse liquid may be a liquid comprising water. For example, the rinse liquid may be suitably selected from pure water or ozone water.

The batch type processing unit 140 may include a first batch type processing unit 141, a second batch type processing unit 142, and a third batch type processing unit 143.

The first batch processing unit 141 may include a 1-1 batch processing bath 141-B1, a 1-2 batch processing bath 141-B2, and a first batch transfer unit 141-TR.

In the 1-1 batch type processing bath 141-B1, a plurality of substrates W may be simultaneously subjected to liquid processing with chemicals such as DSP. In the 1-2 batch type processing bath 141-B2, a plurality of substrates W may be simultaneously processed with a chemical such as DHF. However, the inventive concept is not limited thereto, and the process liquid used in the 1-1 batch type process bath 141-B1 and the 1-2 batch type process bath 141-B2 may be variously modified to be a process liquid selected from the above-described process liquids.

The first batch transfer unit 141-TR may be configured to transfer the substrate W between the 1-1 batch type processing bath 141-B1 and the 1-2 batch type processing bath 141-B2.

The second batch type processing unit 142 may include a 2-1 batch type processing bath 142-B1, a 2-2 batch type processing bath 142-B2, and a second batch transfer unit 142-TR.

In the 2-1 batch processing bath 142-B1, a plurality of substrates W may be simultaneously liquid-processed with a phosphoric acid-containing chemical. In the 2-2 batch processing bath 142-B2, a plurality of substrates W may be simultaneously processed with the rinse solution. However, the inventive concept is not limited thereto, and the process liquid used in the 2-1 batch type process bath 142-B1 and the 2-2 batch type process bath 142-B2 may be variously modified to be a process liquid selected from the above-described process liquids.

In the 2-1 batch type processing bath 142-B1, a plurality of substrates W may be simultaneously subjected to liquid processing with a phosphoric acid-containing chemical. In the 2-2 batch processing bath 142-B2, a plurality of substrates W may be simultaneously processed with the rinse solution. However, the inventive concept is not limited thereto, and the process liquid used in the 2-1 batch type process bath 142-B1 and the 2-2 batch type process bath 142-B2 may be variously modified to be a process liquid selected from the above-described process liquids.

The second batch transfer unit 142-TR may be configured to transfer the substrate W between the 2-1 batch type processing bath 141-B1 and the 2-2 batch type processing bath 142-B2.

The third batch type processing unit 143 may include a 3-1 batch type processing bath 142-B1, a 3-2 batch type processing bath 143-B2, and a third batch transfer unit 143-TR.

In the 3-1 batch type processing bath 143-B1, a plurality of substrates W may be simultaneously subjected to liquid processing with a phosphoric acid-containing chemical. In the 3-2 batch processing bath 143-B2, a plurality of substrates W may be simultaneously processed with the rinse solution. However, the inventive concept is not limited thereto, and the process liquid used in the 3-1 batch type process bath 143-B1 and the 3-2 batch type process bath 143-B2 may be variously modified to be a process liquid selected from the above-described process liquids.

The third batch transfer unit 143-TR may be configured to transfer the substrate W between the 3-1 batch processing bath 143-B1 and the 3-2 batch processing bath 143-B2.

Since the batch-type processing baths 141-B1 to 143-B2 have the same or similar structures as each other except for the kind of the processing liquid L used, the 1-1 batch-type processing bath 141-B1 will be described hereinafter, and repeated description of the remaining batch-type processing baths 141-B2 to 143-B2 will be omitted.

Fig. 2 shows any one of the batch processing baths of fig. 1. For example, FIG. 2 shows a 1-1 batch type processing bath 141-B1 of the batch type processing baths 141-B1 through 143-B2.

Referring to FIG. 2, a 1-1 batch type processing bath 141-B1 may include a processing bath 141-B1-1, a heating member 141-B1-3, a supply line 141-B1-4, a recovery line 141-B1-5, and a support member 141-B1-6.

The treatment bath 141-B1-1 may have a storage space 141-B1-2 therein. The treatment bath 141-B1-1 may have a cylindrical shape with an open top. The treatment liquid L may be stored in the storage space 141-B1-2 of the treatment bath 141-B1-1. In order to adjust the temperature of the treatment liquid L stored in the storage space 141-B1-2, a heating member 141-B1-3 may be installed in the treatment bath 141-B1-1. The heating member 141-B1-3 may heat the temperature of the processing liquid L stored in the storage space 141-B1-2 of the processing bath 141-B1-1 to a set temperature based on the temperature of the processing liquid L sensed by a temperature sensor (not shown).

The supply line 141-B1-4 may supply the processing liquid L to the storage space 141-B1-2. The recovery line 141-B1-5 may discharge the treatment liquid L in the storage space 141-B1-2. A valve is installed in each of the supply line 141-B1-4 and the recovery line 141-B1-5, and the water level of the treatment liquid L supplied to the storage space 141-B1-2 (the amount of the treatment liquid L stored in the storage space 141-B1-2) may be adjusted to a set water level based on the water level of the treatment liquid L sensed by a liquid level sensor (not shown).

The support members 141-B1-6 may be disposed in the storage spaces 141-B1-2 to support the substrate W. The support members 141-B1-6 may be configured to support a plurality of substrates W. For example, the support members 141-B1-6 may be configured to support 50 substrates W. The support members 141-B1-6 may be disposed such that a pair of bar-shaped bodies face each other, and may be configured by forming a support groove (not shown) for supporting the substrate W in each body.

Referring back to fig. 1, the posture changing section 150 may change the posture of the substrate W. The posture changing section 150 may change the substrate W having the vertical posture to the horizontal posture. The posture changing part 150 may change the posture of the substrate W so that the substrate W processed in the vertical posture in the batch type processing chamber 140 may be post-processed in the single type processing chambers 230 and 240, and the single type processing chambers 230 and 240 process the substrate W in the horizontal posture. The posture changing part 150 may be disposed between the batch type processing unit 140 and the second process processing unit 200.

The posture changing section 150 may include a posture changing processing bath 151 and a posture changing manipulator 156. The posture-changing processing bath 151 may have a larger width than the batch-type processing baths 141-B1 to 143-B2 when viewed from above. For example, the posture-changing processing bath 151 may have a larger width in the second direction Y (direction) than the batch-type processing baths 141-B1 to 143-B2 when viewed from above. Further, the posture-changing processing bath 151 may have the same width as the batch-type processing baths 141-B1 to 143-B2 in the first direction X (the other direction) when viewed from above.

Fig. 3 shows a state of the posture-changing processing bath of fig. 1.

Referring to fig. 3, the attitude change treatment bath 151 may include a treatment bath 152, a support member 153, a supply line 154, and a recovery line 155.

The treatment bath 152 may have a cylindrical shape with an open top. The treatment bath 152 may have a rectangular cylindrical shape with an open top. The treatment bath 152 may have storage spaces a and B in which the treatment liquid L may be stored. The treatment liquid L stored in the treatment bath 152 may be an aqueous liquid. The type of the treatment liquid L stored in the treatment bath 152 may be the same type as the wetting liquid ejected from the buffer chamber 210 (to be described later). For example, the treatment liquid L stored in the treatment bath 152 and the wetting liquid ejected from the buffer chamber 210 may each be an aqueous liquid.

The support members 153 may be disposed in the storage spaces a and B to support the substrate W. The support members a and B may be configured to support a plurality of substrates W. For example, the support member 153 may be configured to support 50 substrates W. The support member 153 may be disposed such that a pair of rod-shaped bodies face each other, and a support groove (not shown) through which the substrate W may be supported may be formed in each body.

The supply line 154 may supply the process liquid L to the storage spaces a and B. The recovery line 155 may discharge the treatment liquid L in the storage spaces a and B. A valve is installed in each of the supply line 154 and the recovery line 155, and the level of the treatment liquid L stored in the storage space (i.e., the storage space A, B) may be adjusted to a set level based on the level of the treatment liquid L sensed by a liquid level sensor (not shown).

Further, the storage spaces a and B may include a support area a and a posture change area B. The support region a may be a region in which the support member 153 supports the substrate W. The posture changing region B may be a region in which the posture of the substrate W is changed by a posture changing robot 156 (to be described later).

Referring back to fig. 1, the posture changing manipulator 156 may be provided at one side of the posture changing processing bath 151. The posture changing manipulator 156 may be disposed between the posture changing processing bath 151 and a buffer chamber 210 (to be described later). The posture changing manipulator 156 may include a hand 156-H and a joint 156-R. The hand 156-H may be coupled to the joint 156-R. The joints 156-R may change the position of the hands 156-H.

Fig. 4 schematically illustrates the posture changing manipulator of fig. 1. Referring to fig. 4, the posture changing robot 156 according to an embodiment of the inventive concept may change the posture of the substrate W from the vertical posture to the horizontal posture in the posture changing processing bath 151 and transfer the substrate W, the posture of which has been changed to the horizontal posture, to the buffer chamber 210 of the second process unit 200. In addition, the posture changing manipulator 156 may be a multi-joint manipulator. The attitude change manipulator 156 may be a six-axis multi-joint manipulator.

The joint 156-R may be a multi-joint arm consisting of at least two or more axes. For example, joint 156-R may be a 6-axis multi-joint arm. The joint 156-R may change the position of the hand 156-H by moving the hand 156-H in at least one of the first direction X, the second direction Y, and the third direction Z. Further, the joint 156-R may rotate the hand 156-H based on one of the axes in the first direction X, the second direction Y, and the third direction Z.

The joint 156-R of the posture changing manipulator 156 may include a base 171, a rotating body 172, a first arm 173, a second arm 174, a third arm 175, and a fourth arm 176.

The base 171 may be coupled to the rotating body 172. The rotator 172 may rotate with respect to the base 171. The rotation body 172 may rotate about a direction perpendicular to the ground as a rotation axis. The first arm 173 may be coupled to the rotator 172. The first arm 173 is rotatable with respect to the rotating body about the horizontal direction as a rotation axis. The second arm 174 may be coupled to the first arm 173. The second arm 174 is rotatable with respect to the first arm 173 about a horizontal direction as a rotation axis. The third arm 175 may be coupled to the second arm 174. The third arm 175 may rotate about the longitudinal direction of the second arm 174 (or the longitudinal direction of the third arm 175). The fourth arm 176 is rotatable in a direction perpendicular to the longitudinal direction of the third arm 175. In addition, the fourth arm 176 may rotate the hand 156-H. For example, the fourth arm 176 may have a rotational axis (not shown) capable of rotating the hand 156-H. The hand 156-H may rotate in a direction perpendicular to the axis of rotation of the fourth arm 176.

Fig. 5 shows the hand of fig. 4. Referring to fig. 5, the hand 156-H of the posture changing manipulator 156 may include a support body 161, a first guide unit 162, a second guide unit 163, a driving member 164, a clamping body 165, a fastening body 166, a vision member 167, and a liquid supply member 168.

The support 161 may support the bottom surface of the substrate W. The support 161 may support a top surface on which a pattern of the substrate W is formed, and a bottom surface of the substrate W on which the pattern is not formed. That is, the substrate W may be placed on the support 161.

The support body 161 may be provided with a first guide unit 162 and a second guide unit 163. The first guide unit 162 may be a support pad adjacent to a fastening body 166 (to be described later). The second guide unit 163 may be a support pad remote from the fastening body 166 (to be described later). Each of the first guide unit 162 and the second guide unit 163 may be provided in a pair. The first guide unit 162 and the second guide unit 163 may support the bottom surface and/or the side surface of the substrate W. The first guide unit 162 and the second guide unit 163 may have a stepped shape on an upper surface thereof. For example, the height of an inner region of the bottom surface of the support substrate W in the top surface of the first guide unit 162 may be lower than the height of an outer region of the bottom surface of the support substrate W. Similarly, the height of the inner region of the bottom surface of the support substrate W in the top surface of the second guide unit 163 may be lower than the height of the outer region of the bottom surface of the support substrate W. That is, the substrate W may be placed on the support 161 via the first guide unit 162 and the second guide unit 163 installed in the support 161. The substrate W placed on the support 161 should be interpreted to include not only a case where the support 161 and the substrate W are in direct contact but also a case where the substrate W is placed on the first guide unit 162 and the second guide unit 163 mounted on the support 161.

The driving member 164 may be fastened to the fastening body 166. The driving member 164 may be a driver capable of moving the grip body 165 in the lateral direction. A pair of driving members 164 may be provided. For example, the driving member 164 may be provided to correspond to each of the clamping bodies 165 provided in pairs. The pair of driving members 164 may move the pair of clamping bodies 165 in the lateral direction. The holder 165 is movable in a direction closer to the side surface of the substrate W and in a direction away from the side surface of the substrate W. Thus, the clamping body 165 can clamp the substrate W placed on the support body 161. In other words, the support body 161 and the clamping body 165 may be a body that grips the substrate W.

The fastening body 166 may be a body that couples the clamping body 165 and the support body 161 to the joint 156-R. The fastening body 166 may be a body that couples the clamping body 165 and the support body 161 to a fourth arm 176 of the joint 156-R. The fastening body 166 may be fastened to the rotational axis of the fourth arm 176 of the joint 156-R.

The first guide unit 162 and the second guide unit 163 may be provided to each of the supporting bodies 161. The first guide unit 162 may be a protrusion near a fastening body 166 (to be described later). The second guide unit 163 may be a protrusion away from the fastening body 166 (to be described later). The second guide unit 163 may be disposed farther from the fastening body 166 than the first guide unit 162. The first guide unit 162 and the second guide unit 163 may support sides of the substrate W. The first guide unit 162 and the second guide unit 163 support the side surfaces of the substrate W, and a distance therebetween may be slightly smaller than a diameter of the substrate W.

The vision member 167 may acquire an image by imaging the substrate W and/or the support 161. The acquired image may be transmitted to a controller 600 (to be described later). The controller 600 may generate a control signal for controlling the driving of the posture changing manipulator 156 based on the image acquired by the vision member 167.

The liquid supply member 168 may supply the wetting liquid WL to the substrate W placed on the support 161. The wetting fluid WL may comprise water. The wetting liquid WL supplied from the liquid supply member 168 may be the same kind of liquid as the treatment liquid L stored in the storage spaces a and B. Further, the wetting liquid WL supplied by the liquid supply member 168 may be the same type as the wetting liquid WL supplied by a buffer chamber 210 (to be described later).

The liquid supply member 168 may include a first nozzle 168a and a second nozzle 168b. At least one of the first and second nozzles 168a and 168b may be provided. A plurality of first nozzles 168a and a plurality of second nozzles 168b may be provided. The first nozzle 168a may supply the wetting liquid WL to a first region of the substrate W placed on the support 161. The second nozzle 168b may supply the wetting liquid WL to a second region of the substrate W placed on the support 161. The first region and the second region may be different regions. The first region and the second region may be edge regions of the substrate W (to be described later). The first region may be adjacent to the first nozzle 168a and the second region may be adjacent to the second nozzle 168b.

The distance between the first region and the first nozzles 168a may be shorter than the distance between the second region and the second nozzles 168 b. That is, the spray distance of the wetting liquid WL supplied from the first nozzle 168a may be different from the spray distance of the wetting liquid WL supplied from the second nozzle 168 b. For example, the spray distance of the wetting liquid WL supplied from the first nozzle 168a may be shorter than the spray distance of the wetting liquid WL supplied from the second nozzle 168 b.

In addition, the first nozzles 168a may be disposed between the second nozzles 168b when viewed from above.

The second nozzle 168b may be disposed relatively close to the clamping body 165, which is located at the outer side.

The first nozzle 168a may be disposed at a position relatively distant from the clamping body 165, which is located at the inner side.

The spraying directions of the wetting liquid WL of the first and second nozzles 168a and 168b may be different from each other. For example, the first nozzle 168a may supply the wetting liquid WL in a direction parallel to the reference line, and the second nozzle 168b may supply the wetting liquid WL in a direction inclined to the reference line, based on a virtual reference line passing through the center of the substrate W and the center of the vision member 167 when viewed from above.

The diameters of the spray holes of the first and second nozzles 168a and 168b may be different from each other. For example, the diameter of the spray holes of the first nozzles 168a may be greater than the diameter of the spray holes of the second nozzles 168 a. For example, the supply flow rate of the wetting liquid WL transferred to the first nozzle 168a and the second nozzle 168b may be the same per unit time. Accordingly, the spray distance of the wetting liquid WL sprayed from the first nozzle 168a may be shorter than the spray distance of the wetting liquid WL sprayed from the second nozzle 168 b.

Further, the first nozzle 168a and the second nozzle 168b may be mounted on the support body 161.

Referring back to fig. 1, the second process treatment unit 200 may treat the substrate W treated by the first process treatment unit 100. The second process treatment unit 200 may treat the substrate W treated by the first treatment unit 100, and may perform a liquid treatment or a drying treatment on the substrate W in a single manner.

The second process unit 200 may include a buffer chamber 210, a first transfer chamber 220, a unitary liquid processing chamber 230, a drying chamber 240, a buffer unit 250, a second transfer chamber 260, and a second load port unit 270. Both the unitary liquid processing chamber 230 and the drying chamber 240 may be referred to as a unitary processing chamber.

The buffer chamber 210 may temporarily store the substrate W. In the buffer chamber 210, the substrates W processed in the batch type processing baths 141-B1 to 143-B2 may be changed in posture by the posture changing robot 156 in the posture changing section 150, and may be disposed on a transfer path of the substrates W transferred to the single type processing chambers 230, 240. That is, the buffer chamber 210 may be disposed on a transfer path of the substrate W transferred between the batch type processing baths 141-B1 to 143-B2 and the unitary type processing chambers 230 and 240.

The posture changing robot 156 may change the posture of the substrate W and make the posture-changed substrate W enter the buffer chamber 210. The buffer chamber 210 may temporarily store the substrate W and supply the wetting liquid so that the substrate W may maintain a wet state. The buffer chamber 210 may form a liquid film by supplying a wetting liquid to the substrate W. The substrate W on which the liquid film is formed may be taken out of the buffer chamber 210 by a first transfer robot 222 (to be described later). The substrate W taken out of the buffer chamber 210 may be transferred to the single process chambers 230 and 240 by the first transfer robot 222.

Further, the buffer chamber 210 may be disposed at a higher position than the posture changing processing bath 151. For example, if the posture-changing processing bath 151 is disposed on the first layer, the buffer chamber 210 may be disposed on the second layer or at a height of about 1.5 layers.

Further, the buffer chamber 210 may be arranged in the second direction Y side by side with a unitary liquid processing chamber 230 (to be described later).

Further, a plurality of single-unit liquid processing chambers 230 (to be described later) may be provided. The unitary liquid processing chambers 230 may be mounted by stacking one on top of the other. For example, as shown in fig. 6, three unitary liquid processing chambers may be provided and mounted on top of each other. The buffer chamber 210 may be installed at a higher position than the unitary liquid processing chamber 230 installed at the bottom of the plurality of unitary liquid processing chambers 230, and may be installed at a lower position than the unitary liquid processing chamber 230 installed at the top of the unitary liquid processing chamber 230. For example, the buffer chamber 210 may be installed at a height of about 1.5 layers or 2.5 layers. This will allow the posture changing robot 156 to more easily feed the substrate W into the buffer chamber 210.

Fig. 7 schematically illustrates the buffer chamber of fig. 6. Referring to fig. 7, the buffer chamber 210 may include a chuck 310, liquid supply units 320, 330, a cup 340, a drain line 350, and a lift/lower driver 360.

The chuck 310 may support and rotate the substrate W. Chuck 310 may include a chuck body 312, support pins 314, a rotating shaft 315, and a hollow motor 316.

Chuck body 312 may have a plate shape. Chuck body 312 may have a through opening formed in the central region when viewed from above. At least a portion of liquid supply shaft 326 (described later) may be inserted into a through opening formed in chuck body 312. Support pin 314 may be mounted on chuck body 312. The support pins 314 may support and clamp the bottom surface and/or the side surface of the substrate W. The support pin 314 may be provided to be movable in the lateral direction by a pin moving mechanism (not shown).

Rotation shaft 315 may be coupled to chuck body 312. The rotation shaft 315 may be a hollow shaft having a hollow space. Rotation shaft 315 may be coupled to chuck body 312 to rotate chuck body 312. The rotation shaft 315 may be coupled to the hollow motor 316 to rotate by receiving power from the hollow motor 316. A liquid supply shaft 326 (to be described later) may be inserted into the hollow space of the rotation shaft 315.

The liquid supply units 320 and 330 may supply liquid to the substrate W. The liquid supply units 320 and 330 may supply a wetting liquid and a cleaning liquid to the substrate W. The liquid supply unit 320 may include a first liquid supply unit 320 and a second liquid supply unit 330. The first liquid supply unit 320 and the second liquid supply unit 330 may supply a wetting liquid or a cleaning liquid to the rotating substrate W. For example, the first liquid supply unit 320 may be configured to supply a first liquid, which is a wetting liquid and is water, to the top surface of the rotating substrate W. Further, the second liquid supply unit 330 may be configured to supply a second liquid, which is a cleaning liquid and is isopropyl alcohol (IPA), to the bottom surface of the rotating substrate W.

The first liquid supply unit 320 may be configured to supply a first liquid to a top surface of the substrate W supported by the chuck 310. The first liquid supply unit 320 may include a first nozzle 322 and a first liquid supply source 324.

The first nozzle 322 may supply the first liquid to the top surface of the substrate W. The first liquid supply 324 may store the first liquid and supply the first liquid to the first nozzle 322. The first nozzle 322 receiving the first liquid from the first liquid supply source 324 may discharge the first liquid to the substrate W. The first nozzle 322 may be provided to be movable in a vertical direction and/or a lateral direction by a nozzle moving mechanism (not shown).

The second liquid supply unit 330 may be configured to supply a second liquid to the bottom surface of the substrate W supported by the chuck 310. The second liquid supply unit 330 may be configured to supply a second liquid (e.g., isopropyl alcohol, cleaning liquid) of a type that is more volatile than the first liquid supplied by the first liquid supply unit 320.

The second liquid supply unit 330 may include a second nozzle 332, a second liquid supply line 333, a second liquid supply 334, a cover 335, a liquid supply shaft 336, and a bearing 337.

The second nozzle 332 may be configured to supply the second liquid to the bottom surface of the rotating substrate W. The second nozzle 332 may be configured to supply the second liquid to the bottom surface of the substrate W supported by the chuck 310. The second nozzle 332 may be connected to a second liquid supply line 333. The second liquid supply line 333 may be connected to the second liquid supply 334. The second liquid supplied from the second liquid supply 334 may be transferred to the second nozzle 332 through the second liquid supply line 333. The second liquid transferred to the second nozzle 332 through the second liquid supply line 333 may be supplied to the bottom surface of the rotated substrate W supported by the chuck 310.

Further, cover 335 may cover a through opening formed in the central region of chuck body 312 described above. Accordingly, the inflow of the liquid supplied by the first liquid supply unit 320 and the second liquid supply unit 330 into the through-openings formed in the chuck body 312 can be minimized. In addition, the second nozzle 332 may be mounted on the cover 335.

At least a portion of liquid supply shaft 336 may be inserted into a through opening formed in chuck body 312. Bearing 337 may be mounted between an outer surface of liquid supply shaft 336 and chuck body 312. Therefore, even if the rotation shaft 315 is rotated by the hollow motor 316, the liquid supply shaft 336 can be fixed without rotation. That is, the liquid supply shaft 336 may be independent of the rotation shaft 315. The second liquid supply line 333 may be provided in the hollow space of the liquid supply shaft 336. Accordingly, the second liquid supply line 333 may be damaged by the rotation of the chuck body 312 or the like, or the second liquid supply line 333 may be exposed to the first liquid or the second liquid to minimize damage to the second liquid supply line 333.

The cup 340 may recover the liquid supplied by the liquid supply units 320 and 330. The cup 340 may be configured to separately recover the first liquid supplied by the first liquid supply unit 320 and the second liquid supplied by the second liquid supply unit 330. Further, the cup 340 may block the liquid supplied to the liquid supply units 320 and 330 from scattering to the outside.

Cup 340 may include a first cup 341, a second cup 342, and a third cup 343. The first cup 341 may be an inner cup. The first cup 341 may define a first discharge space 341a, a second discharge space 341b, and a third discharge space 341c. The first, second, and third discharge spaces 341a, 341b, and 341c may be spaces in which scattered liquid supplied to the substrate W is collected. For example, the first discharge space 341a may be a space in which the first liquid supply unit 320 collects the first liquid supplied to and scattered from the substrate W. Further, the second discharge space 341b may be a space in which the second liquid supply unit 330 collects the second liquid supplied to and scattered from the substrate W. Further, the third discharge space 341c may be a space for collecting the remaining liquid that cannot be collected by the first and second discharge spaces 341a and 341b, which is supplied by the first and second liquid supply units 320 and 330 and scattered from the substrate W.

The first exhaust space 341a may be positioned adjacent to the chuck 310, the second exhaust space 341b may be positioned farther from the chuck 310 than the first exhaust space 341a, and the third exhaust space 341c may be positioned farther from the chuck 310 than the second exhaust space 341 b.

Further, the drain line 350 may drain the liquid collected in the above-described drain spaces 341a to 341c to the outside. The drain line 350 may include a first drain line 351 connected to the first drain space 341a, a second drain line 352 connected to the second drain space 341b, and a third drain line 353 connected to the third drain space 341 c.

The second cup 342 may be an intermediate cup. The third cup 343 may be an outer cup. The first cup 341 may define a first recovery path D1 corresponding to the first discharge space 341 a. The first and second cups 341 and 342 may be combined with each other to define a second recovery path D2 corresponding to the second discharge space 341 b. The second liquid supplied by the second liquid supply unit 330 described above may be recovered through the second recovery path D2. The second cup 342 and the third cup 343 may combine with each other to define a third recovery path D3. The first liquid supplied by the first liquid supply unit 320 described above may be recovered through the third recovery path D3.

The lift/lower actuator 360 may raise and lower the cup 340. The lift/lower driver 360 may independently lift/lower the first, second and third cups 341, 342 and 343. The lifting/lowering driver 360 may include a first lifting/lowering driver 361 for lifting/lowering the first cup 341, a second lifting/lowering driver 362 for lifting/lowering the second cup 342, and a third lifting/lowering driver 363 for lifting/lowering the third cup 343. The lift/lower driver 360 may adjust the heights of the above-described recovery paths D1, D2, and D2 by adjusting the heights of the cups 351, 352, and 353, and may adjust the interval between the recovery paths D1, D2.

Referring back to fig. 1, the first transfer chamber 220 may be disposed at one side of the buffer chamber 210 and the unitary liquid processing chamber 230. The buffer chamber 210 may be disposed between the first transfer chamber 220 and the posture changing part 150. Further, the first transfer chamber 220 may be disposed between the buffer chamber 210 and a unitary drying chamber 240 (to be described later). Further, the first transfer chamber 220 may be disposed between the unitary drying chamber 240 and a unitary liquid processing chamber 230 (to be described later).

The first transfer chamber 220 may include a first transfer robot 222 and a transfer rail 223. The first transfer robot 222 may move along the first transfer rail 223. The longitudinal direction of the transfer rail 223 may be parallel to the second direction Y. The first transfer robot 222 may move along the transfer rail 223.

Fig. 8 schematically illustrates the first transfer robot of fig. 1. Referring to fig. 8, the first transfer robot 222 may include a rail driving unit 222A, a hand driving unit 222B, and a hand unit 222C. The rail driving unit 222A may be slidably disposed on the above-described transfer rail 223. The rail driving unit 222A may include a driving motor to travel along the transfer rail 223.

The hand driving unit 222B may rotate the hand unit 222C. The hand driving unit 222B may move the hand unit 222C in the vertical direction. The hand driving unit 222B may include a driving box 222B1 and a driving shaft 222B2. The driving case 222B1 may include a driving device that rotates the driving shaft 222B2 or moves the driving shaft 222B2 in a vertical direction. The drive shaft 222B2 may rotate the hand unit 222C 360 degrees. That is, the position of the hand unit 222C may be changed according to the second direction Y by the rail driving unit 222A, may be rotated around the third direction Z by the hand driving unit 222B, or the height may be changed according to the third direction Z.

The hand unit 222C may include a first hand 222C-A1, a first hand mover 222C-A2, a second hand 222C-B1, a second hand mover 222C-B2, a third hand 222C-C1, a third hand mover 222C-C2, and a slider 222C-D.

The first hand 222C-A1 may be configured to support a bottom surface of the substrate W. The first hand 222C-A1 may be mounted at a higher elevation than the second hand 222C-B1 and the third hand 222C-C1. The first hand 222C-A1 may be coupled to a first hand mover 222C-A2. The first hand mover 222C-A2 may be slidably mounted in a second sliding groove 222C-D2 formed in the slider 222C-D. The first hand 222C-A1 may be configured to be moved forward and backward by the movement of the first hand mover 222C-A2.

The second hand 222C-B1 may be configured to support the bottom surface of the substrate W. The second hand 222C-B1 may be mounted at a height above the third hand 222C-C1 and below the height of the first hand 222C-A1. The second hand 222C-B1 may be coupled to a second hand mover 222C-B2. The second hand mover 222C-B2 may be slidably mounted in a first sliding groove 222C-D1 formed in the slider 222C-D. The second hand 222C-B1 may be configured to be moved forward and backward by the movement of the second hand mover 222C-B2.

The third hand 222C-C1 may be configured to support the bottom surface of the substrate W. The third hand 222C-C1 may be mounted at a lower elevation than the first hand 222C-A1 and the second hand 222C-B1. The third hand 222C-C1 may be coupled to a third hand mover 222C-C2. The third hand moving body 222C-C2 may be slidably installed in the first sliding groove 222C-D1 or the second sliding groove 222C-D2 formed in the sliding body 222C-D at a side opposite to the first and second hand moving bodies. Conversely, the third hand moving body 222C-C2 may be slidably mounted on a third sliding groove (not shown) that is different from the first and second sliding grooves 222C-D1 and 222C-D2 formed in the sliding body 222C-D. The third hand 222C-C1 may be configured to move forward and backward by the movement of the third hand mover 222C-C2.

Referring back to fig. 1, a single process chamber may be disposed at one side and the other side of the first transfer chamber 220. The unitary processing chamber may include a unitary liquid processing chamber 230 and a unitary drying chamber 240. The single-unit liquid treatment chamber 230 may be disposed on one side of the first transfer chamber 220. The single-unit drying chamber 240 may be disposed at the other side of the first transfer chamber 220. A plurality of single-unit liquid processing chambers 230 and single-unit drying chambers 240 may be provided, respectively. As described above, a plurality of unitary liquid processing chambers 230 may be provided and mounted on top of one another. Further, a plurality of unitary drying chambers 240 may be provided and mounted stacked on one another. Each of the unitary liquid processing chamber 230 and the unitary drying chamber 240 may be provided as n (n is a natural number).

Fig. 9 schematically illustrates the shape of the unitary liquid processing chamber of fig. 1.

The single liquid processing chamber 230 may rotate the substrate W in a horizontal posture, but may supply a processing liquid to the rotating substrate W to process the substrate W. The single liquid processing chamber 230 may process the substrates W one by one. The process liquid supplied from the unitary liquid processing chamber 230 may be an organic solvent. For example, the process liquid supplied from the unitary liquid processing chamber 230 may be isopropyl alcohol (IPA). In the unitary liquid processing chamber 230, an organic solvent may be supplied to the rotating substrate W, and the substrate W may be dried by rotating the substrate W. In contrast, the unitary liquid processing chamber 230 supplies an organic solvent to the rotating substrate W, and transfers the substrate W to a drying chamber 240 (to be described later) in a state where the substrate W is wet with the organic solvent, so that the substrate W can be dried in the drying chamber 240.

The unitary liquid processing chamber 230 may include a housing 410, a processing container 420, a supporting unit 440, a lifting/lowering unit 460, and a liquid supply unit 480.

The housing 410 has a processing space 412 therein. The case 410 may have a cylindrical shape having a space therein. The inner space 412 of the case 410 may be provided with a process container 420, a supporting unit 440, a lifting/lowering unit 460, and a liquid supply unit 480. The case 410 may have a rectangular shape when viewed from a front cross section. However, the inventive concept is not limited thereto, and the case 410 may be transformed into various shapes that may have the processing space 412.

The processing vessel 420 has a cylindrical shape with an open top. The processing vessel 420 has an inner recovery vessel 422 and an outer recovery vessel 426. Each of the recovery vessels 422 and 426 recovers a different process liquid from the process liquid used in the process. The inner recovery container 422 is disposed in a circular ring shape surrounding the substrate supporting unit 440, and the outer recovery container 426 is disposed in a circular ring shape surrounding the inner recovery container 422. The inner space 422a of the inner recovery vessel 422 serves as a first inlet 422a through which the treatment liquid flows into the inner recovery vessel 422. The space 426a between the inner recovery vessel 422 and the outer recovery vessel 426 serves as a second inlet 426a through which the treatment liquid flows into the outer recovery vessel 426. Each of the inlets 422a and 426a may be positioned at a different height according to an embodiment. Recovery lines 422b and 426b connect below the bottom surface of each of recovery vessels 422 and 426. The treatment liquid introduced into each of the recovery vessels 422 and 426 may be supplied to an external treatment liquid regeneration system (not shown) through recovery lines 422b and 426b and reused.

The support unit 440 supports the substrate W in the processing space 412. The support unit 440 supports and rotates the substrate W during a process. The support unit 440 has a support plate 442, support pins 444, chuck pins 446, and rotation driving members 448 and 449.

The support plate 442 is provided in a generally circular plate shape and has a top surface and a bottom surface. The bottom surface has a smaller diameter than the top surface. That is, the support plate 442 may have a shape of a wide top surface and a narrow bottom surface. The top and bottom surfaces are positioned such that their central axes coincide with each other. Further, a heating device (not shown) may be provided on the support plate 442. The heating device provided at the support plate 442 may heat the substrate W placed on the support plate 442. The heating means may generate heat. The heat generated by the heating means may be hot or cold. The heat generated by the heating device may be transferred to the substrate W placed on the support plate 442. In addition, the heat transferred to the substrate W may heat the processing liquid supplied to the substrate W. The heating means may be a heater and/or a cooling coil. However, the inventive concept is not limited thereto, and the heating device may be variously modified to a known device.

A plurality of support pins 444 are provided. The support pins 444 are provided to be spaced apart from the edge of the top surface of the support plate 442 at predetermined intervals and protrude upward from the support plate 442. The support pins 444 are provided to have a circular ring shape as a whole by being combined with each other. The support pins 444 support the rear edge of the substrate W such that the substrate W is spaced apart from the top surface of the support plate 442 by a predetermined distance.

A plurality of chuck pins 446 are provided. The chuck pins 446 are disposed farther from the center of the support plate 442 than the support pins 444. The chuck pins 446 are provided to protrude upward from the top surface of the support plate 442. The chuck pins 446 support one side of the substrate W so that the substrate W does not deviate from a correct position in the lateral direction when the support plate 442 rotates. The chuck pins 446 are provided to be linearly movable between an outer position and an inner position in the radial direction of the support plate 442. The outer position is a position far from the center of the support plate 442 as compared to the inner position. The chuck pins 446 are positioned at an outer position if the substrate W is loaded onto or unloaded from the support plate 442, and the chuck pins 446 are positioned at an inner position if a process is performed on the substrate W. The inner position is a position where the chuck pins 446 and the sides of the substrate W contact each other, and the outer position is a position where the chuck pins 446 and the substrate W are spaced apart from each other.

The rotation driving members 448 and 449 rotate the support plate 442. The support plate 442 may be rotated about a magnetic central axis by rotational drive members 448 and 449. The rotation driving members 448 and 449 include a support shaft 448 and a driving unit 449. The support shaft 448 has a cylindrical shape facing in the fourth direction 16. The top end of the support shaft 448 is fixedly coupled to the bottom surface of the support plate 442. According to an embodiment, the support shaft 448 may be fixedly coupled to the center of the bottom surface of the support plate 442. The driving unit 449 provides driving force to rotate the support shaft 448. The support shaft 448 may be rotated by the drive unit 449, and the support plate 442 may be rotated together with the support shaft 448.

The lifting/lowering unit 460 linearly moves the process container 420 in the vertical direction. As the process vessel 420 moves up and down, the relative height of the process vessel 420 with respect to the support plate 442 changes. In the lifting/lowering unit 460, the process container 420 is lowered such that the support plate 442 protrudes above the process container 420 when the substrate W is loaded on or unloaded from the support plate 442. Further, if the process is continued, the height of the process container 420 is adjusted so that the process liquid may flow into the predetermined recovery containers 422, 426 according to the type of the process liquid supplied to the substrate W. The lifting/lowering unit 460 has a carriage 462, a moving shaft 464, and a driver 466. The bracket 462 is fixedly installed on an outer wall of the process container 420, and a moving shaft 464, which is moved in a vertical direction by a driver 466, is fixedly coupled to the bracket 462. Alternatively, the lifting/lowering unit 460 may move the support plate 442 in the vertical direction.

The liquid supply unit 480 may supply a processing liquid to the substrate W. The treatment liquid may be the above-mentioned organic solvent, chemical or rinse liquid. The organic solvent may be isopropyl alcohol (IPA) liquid.

The liquid supply unit 480 may include a moving member 481 and a nozzle 489. The moving member 481 moves the nozzle 489 to the process position and the standby position. The process position is a position where the nozzle 489 faces the substrate W supported by the support unit 440. According to an embodiment, the process location is a location where the processing liquid is discharged to the top surface of the substrate W. In addition, the process locations further include a first supply location and a second supply location. The first supply position may be a position closer to the center of the substrate W than the second supply position, and the second supply position may be a position including an end of the substrate. Alternatively, the second supply location may be a region adjacent to an end of the substrate. The standby position is defined as the position where the nozzle 489 leaves the process position. According to an embodiment, the standby position may be a position where the nozzle 489 is standby before or after the process treatment is completed on the substrate W.

The moving member 481 includes an arm 482, a support shaft 483, and a driver 484. The support shaft 483 is positioned on one side of the process vessel 420. The support shaft 483 has a rod shape in which the longitudinal direction of the support shaft 483 faces the fourth direction. The support shaft 483 is provided rotatably by the driver 484. The support shaft 483 is provided so as to be movable up and down. The arm 482 is coupled to a top end of the support shaft 483. The arm 482 extends vertically from the support shaft 483. A nozzle 489 is coupled to an end of the arm 482. As the support shaft 483 rotates, the nozzle 489 can swing together with the arm 482. The nozzle 489 can be oscillatably moved to a process position and a standby position. Alternatively, the arm 482 may be provided to be movable forward and backward in its longitudinal direction. The path through which the nozzle 489 moves when viewed from above may coincide with the central axis of the substrate W at the process location.

Fig. 10 schematically illustrates the shape of the unitary drying chamber of fig. 1.

A plurality of single-unit drying chambers 240 may be provided. A plurality of the single drying chambers 240 may be disposed and stacked in a vertical direction. The single drying chamber 240 may process the substrate W using a supercritical fluid. The unitary drying chamber 240 may be a supercritical chamber in which one substrate W is dried in a unitary manner. The single drying chamber 240 may be a supercritical chamber in which a supercritical fluid is used to dry the substrate W.

The unitary drying chamber 240 may remove the processing liquid remaining on the substrate W by using the drying fluid G in a supercritical state. The single drying chamber 240 may be a supercritical chamber that removes a process liquid (e.g., a rinse liquid or an organic solvent) remaining on the substrate W using a supercritical fluid. For example, the single drying chamber 240 may perform a drying process of removing the organic solvent remaining on the substrate W using supercritical carbon dioxide (CO 2).

The single-type drying chamber 240 may include a body 510, a heating member 520, a fluid supply unit 530, a fluid discharge unit 550, and a lifting/lowering member 560. The body 510 may have an inner space 518 in which the substrate W is processed. The body 510 may provide an inner space 518 in which the substrate W is processed. The body 510 may provide an inner space 518 in which the substrate W is dried by the drying fluid G in a supercritical state.

Body 510 may include a top body 512 and a bottom body 514. The top body 512 and the bottom body 514 may be combined with each other to form an interior space 518. The substrate W may be supported in the inner space 518. For example, the substrate W may be supported by a support member (not shown) in the inner space 518. The support member may be configured to support a bottom surface of an edge region of the substrate W. Either of the top body 512 and the bottom body 514 may be coupled to the lifting/lowering member 560 to move in a vertical direction. For example, the bottom body 514 may be coupled to the lifting/lowering member 560 to move in a vertical direction by the lifting/lowering member 560. Accordingly, the inner space 518 of the body 510 may be selectively sealed. In the foregoing embodiment, the bottom body 514 is coupled with the lifting/lowering member 560 to move in the vertical direction as an embodiment, but the inventive concept is not limited thereto. For example, the top body 512 may be coupled to the lifting/lowering member 560 to move in a vertical direction.

The heating member 520 may heat the drying fluid G supplied to the inner space 518. The heating member 520 may increase the temperature of the inner space 518 of the body 510 to change the drying fluid G supplied to the inner space 518 into a supercritical state. Further, the heating member 520 may increase the temperature of the inner space 518 of the body 510 such that the drying fluid G in a supercritical state supplied to the inner space 518 is maintained in a supercritical state.

Further, the heating member 520 may be embedded within the body 510. For example, the heating member 520 may be embedded in either of the top body 512 and the bottom body 514. For example, the heating member 520 may be disposed within the bottom body 514. However, the inventive concept is not limited thereto, and the heating member 520 may be disposed at various positions capable of increasing the temperature of the inner space 518. In addition, the heating member 520 may be a heater. However, the inventive concept is not limited thereto, and the heating member 520 may be variously modified to a known apparatus capable of increasing the temperature of the inner space 518.

The fluid supply unit 530 may supply the drying fluid G to the inner space 518 of the body 510. The drying fluid G supplied by the fluid supply unit 530 may include carbon dioxide CO ₂ . The fluid supply unit 530 may include a fluid supply 531, a first supply line 533, a first supply valve 535, a second supply line 537, and a second supply valve 539.

The fluid supply 531 may store and/or supply a drying fluid G, which is supplied to the inner space 518 of the body 510. The fluid supply 531 may supply the drying fluid G to the first supply line 533 and/or the second supply line 537. For example, a first supply valve 535 may be installed in the first supply line 533. Further, a second supply valve 539 may be mounted on the second supply line 537. The first and second supply valves 535 and 539 may be open/close valves. Depending on the opening/closing of the first and second supply valves 535 and 539, the drying fluid G may selectively flow through the first or second supply lines 533 or 537.

In the above-described embodiment, the first supply line 533 and the second supply line 537 are connected to one fluid supply 531, but are not limited thereto. For example, a plurality of fluid supplies 531 may be provided, a first supply line 533 may be connected to one of the plurality of fluid supplies 531, and a second supply line 537 may be connected to another of the fluid supplies 531.

Further, the first supply line 533 may be a top supply line supplying the dry gas from above the inner space 518 of the body 510. For example, the first supply line 533 may supply the drying gas in a direction from the top to the bottom of the inner space 518 of the body 510. For example, a first supply line 533 may be connected to the top body 512. Further, the second supply line 537 may be a bottom supply line that supplies gas from below the interior 518 of the body 510. For example, the second supply line 537 may supply the drying gas to the inner space 518 of the body 510 in a bottom-to-top direction. For example, the second supply line 537 may be connected to the bottom body 514.

The fluid discharge unit 550 may discharge the drying fluid G from the inner space 518 of the body 510.

Referring back to fig. 1, the substrate W processed in the single process chamber may be transferred to the buffer unit 250 by the first transfer robot 222. The buffer unit 250 may be disposed between the first transfer chamber 220 and the second transfer chamber 260. The buffer unit 250 may be disposed between the unitary processing chamber and the second load port unit 270.

The buffer unit 250 may provide a space for temporarily storing the substrate W. For example, the buffer unit 250 may temporarily store the substrates W processed in the unitary liquid processing chamber 230 and/or the unitary drying chamber 240 as a unitary processing chamber. The buffer unit 250 may be a shelf capable of temporarily storing a plurality of substrates W.

The second transfer chamber 260 may be disposed between the buffer unit 250 and the second load port unit 270. The second transfer robot 262 may be disposed in the second transfer chamber 260. The second transfer robot 262 may complete the process and transfer the substrates W stored in the buffer unit 250 to the transfer container F.

The hand of the second transfer robot 262 may be a single hand for transferring the substrates W one by one. The transfer hand of the second transfer robot 262 may be provided to be movable in the first direction X, the second direction Y, and the third direction Z. Further, the transfer hand of the second transfer robot 262 may be rotatably provided with respect to the third direction Z as the rotation axis.

The second load port unit 270 may include at least one load port. A transfer container F capable of storing a plurality of substrates W may be placed on the load port of the second load port unit 270. For example, the transfer container F placed in the second load port unit 270 may store the substrates W processed by the first and second process units 100 and 200. The transfer container F placed in the second load port unit 270 may store only the substrates W that have been processed in the first and second process treatment units 100 and 200. That is, the second load port unit 270 may perform a function of unloading the processed substrate W from the substrate processing apparatus.

The second transfer robot 262 described above may feed the processed substrates W into the containers F placed in the load ports of the second load port unit 270. The container F may be transferred to the outside of the substrate processing apparatus 10 by the above-described article transfer apparatus (e.g., OHT).

The controller 600 may control the substrate processing apparatus 10. For example, the controller 600 may control components of the substrate processing apparatus 10. For example, the controller 600 may control the substrate processing apparatus 10 such that the substrate processing apparatus 10 may perform a process of processing the substrate W.

For example, the controller 600 may control at least one of the first load port unit 110, the index chamber 120, the transfer unit 130, the batch processing unit 140, the posture changing part 150, the buffer chamber 210, the first transfer chamber 220, the unitary liquid processing chamber 230, the unitary drying chamber 240, and the second transfer chamber 260.

The controller 600 may include a process controller composed of a microprocessor (computer) performing control of the substrate processing apparatus 10, a user interface (such as a keyboard) through which an operator inputs a command to manage the substrate processing apparatus 10, and a display displaying an operation condition of the substrate processing apparatus, and a memory unit storing a processing program, i.e., a control program for performing a processing process of the substrate processing apparatus 10 by controlling the process controller; or stores a program for executing components of the substrate processing apparatus according to the data and the processing conditions. Further, the user interface and the memory unit may be connected to a process controller. The processing program may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk, a portable magnetic disk (such as a CD-ROM or DVD), or a semiconductor memory (such as a flash memory).

Referring to fig. 11, the substrate processing method according to an embodiment of the inventive concept may include a substrate loading step S10, a first posture changing step S20, a batch type processing step S30, a second posture changing step S40, a wetting step S50, a unitary type processing step S60, and a substrate unloading step S70.

In the substrate loading step S10, a so-called substrate W in an unprocessed state, which needs to be processed, may be loaded on the substrate processing apparatus 10. In the substrate loading step S10, the transfer container F may be placed on the first load port unit 110.

The substrates W stored in the transfer container F may be taken out and transferred to the storage container C by the index robot 122.

In the first posture changing step S20, the posture of the substrate W may be changed from the horizontal posture to the vertical posture. In the first posture changing step S20, the posture of the substrate W may be changed as the storage container C is rotated about the axis line in the first direction X by the posture changing unit 124. The posture changing unit 124 may have a rotation shaft capable of rotating the storage container C in the first direction X as an axis. In the first posture changing step S20, the postures of the plurality of substrates W may be changed at a time.

The substrate W changed to the vertical posture may be transferred to the first batch processing unit 141 by the first transfer unit 132.

In the batch process step S30, liquid processing may be performed on the plurality of substrates W in the vertical posture. In the batch type processing step S30, the substrate W may be transferred to at least one of the batch type processing baths 141-B1 to 143-B2 to perform liquid processing on the substrate W. The batch processing step S30 may be performed in the following manner: the substrate is pre-processed at the first batch type processing unit 141 and post-processed at the second batch type processing unit 142 or the third batch type processing unit 143.

For example, the substrates W transferred to the first batch type processing unit 141 may be liquid-processed in the 1-1 batch type processing bath 141-B1 and/or the 1-2 batch type processing bath 141-B2. The substrates W subjected to the liquid treatment in the 1-1 batch type processing bath 141-B1 and/or the 1-2 batch type processing bath 141-B2 may be transferred to a processing unit selected from any one of the second batch type processing unit 142 or the third batch type processing unit 143. In the 1-1 batch type processing bath 141-B1, the substrate W may be processed with a chemical such as DSP (an embodiment of a first chemical), and in the 1-2 batch type processing bath 141-B2, the substrate W may be processed with a chemical such as DHF (an embodiment of a second chemical).

For example, if the substrate W is transferred to the second batch type processing unit 142, the substrate W may be first processed by a phosphoric acid-containing chemical (an embodiment of a third chemical) in the 2-1 batch type processing unit 142-B1 and then processed by an aqueous rinse solution in the 2-2 batch type processing unit 142-B2.

The rinsed substrate W may be transferred to the posture-changing processing bath 151 by the second transfer unit 134.

The second posture changing step S40 may be performed by the posture changing section 150. The second posture changing step S40 may include a grasping step of grasping the substrate W and a rotating step of changing the posture of the substrate W. In the second posture changing step S40, the posture of the substrate W may be changed one by one.

For example, as shown in fig. 12, in the gripping step during the second posture changing step S40, the hand 156-H may approach any substrate W of the vertical posture substrate W supported by the support member 153. The hand 156-H may move so that the substrate W may be positioned between the first guide unit 162 and the second guide unit 163. The clamping body 165 may move to the clamping position and grasp the substrate W if the substrate W is positioned between the first guide unit 162 and the second guide unit 163.

If the hand 156-H grips the substrate W, the substrate W may be moved upward so that the substrate W may be separated from the support groove formed in the support member 153.

Then, as shown in fig. 13, in the rotating step of the second posture changing step S40, in the case where the substrate W is rotated based on the axis of the rotating fastening body 166, the position of the substrate W may be changed by linearly moving the substrate W in a direction (for example, a horizontal direction). That is, in the rotation step, in the case where the hand 156-H of the posture changing manipulator 156 is rotated based on the axis, the hand 156-H may be linearly moved in the horizontal direction. In this case, in the case where the substrate W is immersed in the processing liquid L, the end portion of the substrate may change the posture of the substrate from the vertical posture to the horizontal posture while drawing a virtual curve (e.g., a cut parabola). Further, the rotation of the substrate W may be performed in a direction in which one end of the substrate W moves away from the hand 156-H.

Further, a difference between a point of time at which the rotation of the substrate W is terminated and a point of time at which the linear movement of the substrate W is terminated may be less than or equal to the set time. For example, the two time points may be the same time point. That is, the rotation of the substrate W by the fastening body 166 may be terminated as the linear movement of the substrate W is completed.

Further, in the case where the substrate W is gripped and rotated, the vision member 167 may not be immersed in the processing liquid L. That is, the vision member 167 may be installed at a position not immersed in the processing liquid L stored in the posture-changing processing bath 151. Accordingly, the problem of damage to the vision member 167 by the treatment liquid L can be minimized.

If the posture of the substrate W is changed in a state where the substrate W is immersed in the processing liquid L, the substrate W may be damaged by the resistance of the processing liquid L. However, if the substrate W is immersed in the processing liquid L and the posture is changed together with the rotation, the transfer of the resistance of the processing liquid L to the substrate W is suppressed as much as possible. Further, if the posture of the substrate W is changed by removing the substrate W from the processing liquid L (i.e., exposed to air), since the wettability of the substrate W cannot be maintained, watermarks may be generated on the substrate W, which may be minimized by changing the posture of the substrate W immersed in the processing liquid L.

After the second posture changing step S40 is performed, a wetting step S50 may be performed. The wetting step S50 may be performed between the second posture changing step S40 and the unitary processing step S60. The wetting step S50 may be performed by the posture changing robot 156 and/or the buffer chamber 210. In the wetting step S50, natural drying of the substrate W may be prevented by spraying the wetting liquid to the substrate W exposed to the outside away from the processing liquid L. The wetting liquid may be the same kind of liquid as the processing liquid L stored in the aforementioned posture-changing processing liquid 151.

Further, the wetting step S50 may include a first wetting step S51 performed by the posture changing robot 156 and a second wetting step S52 performed by the buffer chamber 210.

The first wetting step S51 may be performed by the posture changing manipulator 156. Referring to fig. 14, if the change of the posture of the substrate W is completed, the posture changing robot 156 may move the substrate W upward so that the substrate W is away from the processing liquid L stored in the posture changing processing bath 152. The liquid supply member 168 may supply the wetting liquid WL if the substrate W deviates from the processing liquid L. In this case, as shown in fig. 15 and 16, the wetting liquid WL may be supplied to the first and second regions, which are edge regions of the substrate W. The wetting liquid WL supplied to the edge region of the substrate W may flow along the top surface of the substrate W to form a liquid film on the top surface of the substrate W. If the wetting liquid WL flows along the edge region of the substrate W to form a liquid film, a splash phenomenon of the wetting liquid WL is suppressed as much as possible, so that the substrate W can be more effectively processed.

The posture changing robot 156 may feed the substrate W, on which the wet state is maintained by the wetting liquid WL, into the buffer chamber 210.

The second wetting step S52 may be performed by the buffer chamber 210. Referring to fig. 17, the substrate W fed into the buffer chamber 210 may be supported by a chuck 310. The substrate W supported by the chuck 310 may be supported and/or held by the support pins 314. In addition, the lift/lower driver 360 may lift/lower the cup 340 to adjust the height of the first recovery path D1 and the height of the second recovery path D2.

Thereafter, the chuck 310 may rotate the substrate W. The first liquid supply unit 320 may supply a first liquid DIW (referred to as a wetting liquid) to the top surface of the substrate W if the chuck 310 rotates. In addition, the second liquid supply unit 330 may supply a second liquid (IPA, referred to as a cleaning liquid) to the bottom surface of the substrate W. The first liquid DIW supplied and scattered to the substrate W may be discharged to the outside of the buffer chamber 210 through the first recovery path D1. Further, the second liquid IPA may be discharged to the outside of the buffer chamber 210 through the second recovery path D2.

The first liquid DIW may be supplied to the top surface of the substrate W to form a liquid film on the substrate W. The second liquid IPA may be supplied to the bottom surface of the substrate W to clean the bottom surface of the substrate W. The second liquid IPA is supplied from the buffer chamber 210 to the bottom surface of the substrate W to clean the bottom surface of the substrate W to minimize contamination of the hands of the first transfer robot 222 that takes the substrate W out of the buffer chamber 210 and transfers the substrate W to the single process chamber 230. In addition, a liquid film is formed on the patterned substrate W by the first liquid (DIW, wetting liquid), preventing a watermark or tilting phenomenon from being formed on the pattern formed on the substrate W by the surface of the substrate W naturally drying during the transfer of the substrate W to the single liquid processing chamber 230.

In the second wetting step S52, the controller 600 may control the driving of the hollow motor 316 such that the rotational speed of the chuck 310 is between 300RPM and 500RPM. According to an embodiment of the present inventive concept, if the rotation speed of the chuck 310 is too high, a liquid film of wetting liquid may be improperly formed on the top surface of the substrate W, and thus the rotation speed of the chuck 310 is adjusted to 300RPM to 500RPM according to an embodiment of the present inventive concept. This is because the first liquid supplied to the substrate W may be inappropriately diffused onto the substrate W if the rotational speed of the chuck 310 is lower than 300RPM, and the first liquid may not form a liquid film on the substrate W due to excessive diffusion from the substrate W if the rotational speed of the chuck 310 is greater than 500RPM.

Further, in the second wetting step S52, the second liquid supplied to the bottom surface of the substrate W may be provided as a liquid having higher volatility than the first liquid. In order to minimize contamination of the hands of the first transfer robot 222, the bottom surface of the substrate W is cleaned, but it may be appropriate that the first transfer robot 222 transfers the substrate W in a dry state, if possible. If the bottom surface of the substrate W is cleaned using the same kind of liquid (e.g., water) as the first liquid, the bottom surface of the substrate W may be cleaned, but it is difficult to properly dry the bottom surface of the substrate W. If the rotation speed of the chuck 310 is increased to dry the bottom surface of the substrate W, it may be difficult to form a liquid film on the top surface of the substrate W. According to an embodiment of the inventive concept, the first liquid is supplied to the top surface of the substrate W and the highly volatile second liquid is supplied to the bottom surface of the substrate W such that the top portion of the substrate W remains wet even at the same rotation speed of the chuck 310, but the bottom portion of the substrate W is rapidly volatilized and dried.

In addition, as shown in fig. 18, the supply of the first liquid and the second liquid may be simultaneously started, but as shown in fig. 19, the first liquid supply unit 320 may start to supply the first liquid, and the second liquid supply unit 330 may start to supply the second liquid after a set time.

In addition, the controller 600 may control the buffer chamber 210, the unitary liquid processing chamber 230, and the unitary drying chamber 240 such that the processing time of the substrate W in the buffer chamber 210 is shorter than the processing time of the unitary liquid processing chamber 230 and/or the unitary drying chamber 240.

For example, the processing time of the substrate W in the buffer chamber 210 may be about 8 seconds to 12 seconds, and the processing time of the substrate W in the single liquid processing chamber 230 may be about 60 seconds to 70 seconds.

In the unitary processing step S60, processing may be performed on a single substrate W in a horizontal posture. The single process step S60 may include a liquid process step S61 and a drying step S62.

In the liquid processing step S61, the substrate W may be liquid-processed in a single manner. If the substrate W temporarily stored in the buffer chamber 210 is transferred to the unitary liquid processing chamber 230, the liquid processing step S61 may be performed in the unitary liquid processing chamber 230. In the liquid processing step S40, an organic solvent such as IPA may be supplied onto the substrate W.

In the drying step S62, the substrate W may be dried in a single manner. If the substrate W liquid-treated in the liquid treatment step S61 is transferred to the drying chamber 240, the drying step S62 may be performed in the drying chamber 240. In the drying step S50, a supercritical processing fluid (e.g., supercritical carbon dioxide) may be supplied to the substrate W to remove the organic solvent, wetting liquid, or processing liquid L remaining on the substrate.

In some cases, the drying step S50 is not performed in the drying chamber 240, and the substrate W may be dried by rotating the substrate W at a high speed in the unitary liquid processing chamber 230 (so-called centrifugal drying).

In the substrate unloading step S70 performed after the unitary processing step S60, the substrate W on which the unitary processing step S60 is performed may be transferred to the buffer unit 250 and then transferred to the transfer container F placed on the second load port unit 270 by the second transfer robot 260 of the second transfer chamber 260, and the transfer container F placed on the second load port 270 may be gripped by a transfer device (such as an OHT) to be unloaded from the substrate processing apparatus 10.

Further, the transfer of the substrate W from the buffer chamber 210 to the unitary liquid processing chamber 230 may be performed by the third hand 222C-C1 among the hands of the first transfer robot 222. Further, the transfer of the substrate W from the unitary liquid processing chamber 230 to the unitary drying chamber 240 may be performed by the second hand 222C-B1 of the hands of the first transfer robot 222. Further, the transfer of the substrate W from the unitary drying chamber 240 to the buffer unit 250 may be performed by the first hand 222C-A1. The hands of the first transfer robot 222 are installed at different heights, and the degree of cleaning may be different according to the installation height. For example, a hand installed at a relatively high position may have excellent cleanliness. Accordingly, in the present inventive concept, the substrate W that has been processed in the unitary drying chamber 240 may be transferred by the first hand 222C-A1, the substrate W processed by the unitary liquid processing chamber 230 may be transferred by the second hand 222C-B1, and the substrate W in a state before liquid processing in the unitary liquid processing chamber 230 may be transferred by the third hand 222C-C1 to maintain the cleanliness of the substrate W.

As described above, the substrate processing apparatus 10 according to an embodiment of the inventive concept may include both the batch type processing unit 140 and the unitary liquid processing chamber 230. Thus, all the advantages of batch liquid treatment methods and single liquid treatment methods can be realized.

For example, the batch type processing unit 140 may process a plurality of substrates W at a time, so that mass production of the processed substrates W is excellent and process uniformity between the substrates W is very high. Further, if the pattern formed on the substrate W has a high aspect ratio, chemicals, rinse solutions, and the like may be supplied from the batch processing unit 140 for the supplementary processing of the unprocessed portion (e.g., the unetched portion). In addition, the substrate W (e.g., wafer) wetted with the organic solvent supplied from the unitary liquid processing chamber 230 or the buffer chamber 210 may be transferred to the drying chamber 240, which dries the substrate W by supplying the supercritical fluid. The supercritical fluid has a high penetrating power with respect to spaces between patterns formed on the substrate W, and can dry the substrate W without rotating the substrate W, thereby minimizing the occurrence of the pattern tilting phenomenon described above. In addition, the substrate processing apparatus 10 of the present inventive concept can perform all of a single liquid processing method, a batch type liquid processing method, and a substrate W drying method using a supercritical fluid, thereby improving defects due to particles, drips, and flowability. Further, since the number of substrates W that can be processed by the batch processing unit 140 is relatively large, a large number of liquid processing chambers are not required, so that there may be an advantage in that the floor space of the substrate processing apparatus 10 is reduced. Further, by further including the single liquid processing chamber 230 as described above, it is possible to solve SiO in a pattern on the substrate W that may occur if the substrate W is processed using only the batch processing unit 140 ₂ Is a problem of abnormal growth.

Further, according to an embodiment of the inventive concept, if the batch type processing unit 140 and the single type liquid processing chamber 230 are provided, it is necessary to change the posture of the substrate W from the vertical posture to the horizontal posture as in the substrate processing apparatus 10 according to an embodiment of the inventive concept. Accordingly, the substrate processing apparatus 10 according to an embodiment of the inventive concept is equipped with the posture changing robot 156 to change the posture of the substrate W from the vertical posture to the horizontal posture. At this time, in the case where the substrate W is immersed in the processing liquid L, the posture of the substrate W is changed so that the wettability of the substrate W is maintained as much as possible (otherwise, the substrate W may be dried to generate a watermark).

In the above-described embodiment, the liquid supply member 168 may be mounted on the support body 161 as an embodiment, but the inventive concept is not limited thereto. For example, as shown in fig. 20, the liquid supply member 169 may be mounted on the fastening body 166. The liquid supply member 169 may be a supply pipe in which the first, second, and third nozzles 169a, 168b, and 168c are formed. The first, second and third nozzles 169a, 168b and 168c may spray the wetting liquid W toward the substrate W in a downwardly inclined direction. At least one of each of the first, second, and third nozzles 169a, 168b, and 168c may be formed. For example, a plurality of first, second and third nozzles 169a, 168b and 168c may be formed. The plurality of first nozzles 169a may be disposed between the plurality of second nozzles 169b, and the plurality of second nozzles 169b may be disposed between the plurality of third nozzles 169 c. The first nozzles 169a may be disposed relatively inward, and the third nozzles 169c may be disposed relatively outward. In addition, as shown in fig. 21, the diameters of the spray holes of the first, second and third nozzles 169a, 169b and 169c may be different from each other. The diameter of the spray holes of the first nozzles 169a may be larger than the diameter of the spray holes of the second nozzles 169b, and the diameter of the spray holes of the second nozzles 169b may be larger than the diameter of the spray holes of the third nozzles 168c. Further, the supply flow rate of the wetting liquid WL per unit time transferred to the first, second and third nozzles 169a, 169b and 169c may be the same. Accordingly, the spray distance of the wetting liquid WL supplied from the first, second and third nozzles 169a, 169b and 169c may be shortest in the first nozzle 169a and longest in the third nozzle 169 c. Further, the first, second and third nozzles 169a, 169b and 169c may supply the wetting liquid W to the edge region of the substrate W.

In the above-described embodiments, the posture changing robot 156 that supplies the wetting liquid W to the edge region of the substrate W has been described as an embodiment, but is not limited thereto. For example, as shown in fig. 22, the liquid supply member 177 may be fastened to the third arm 175. Further, the liquid supply member 177 may be rotatably disposed in a direction parallel to a direction in which the fourth arm 176 rotates as a rotation axis, and may be configured to supply the wetting liquid WL to a central region of the substrate W placed on the hand 156-H.

In the above-described embodiments, the buffer chamber 210 and the unitary liquid processing chamber 230 have been described as having different liquid processing structures, but the inventive concept is not limited thereto. For example, the unitary liquid processing chamber 230 may have the same liquid processing structure as the buffer chamber 210.

Further, in the above-described embodiment, the first liquid supply unit 320 of the buffer chamber 210 supplies water to the top surface of the substrate W, but is not limited thereto. For example, the first liquid supply unit 320 of the buffer chamber 210 may be configured to supply IPA in the same manner as the second liquid supply unit 330. In this case, if all the single liquid processing chambers 230 perform liquid processing on the substrate W, the buffer chamber 210 may supply IPA to the top surface of the substrate W, and the substrate W may be directly transferred from the buffer chamber 210 to the single drying chamber 240.

Fig. 23 is a schematic view of a substrate processing apparatus according to another embodiment of the inventive concept, as viewed from above. Referring to fig. 23, the substrate processing apparatus 10A may include a carry-in/out section T2, a unitary processing section T3, an interface section T5, and a batch processing section T6. The loading/unloading section T2 has a loading table T22 for loading the containers F. The in/out section T2, the unitary processing section T3, the interface section T5, and the batch processing section T6 may be arranged side by side along the first direction TX.

The carry-in/take-out portion T2 may have a first transfer area T23, and the first transfer area T23 may be adjacent to the loading table T22. The first transfer apparatus T24 may transfer the substrate W between the container F and the first buffer unit T26.

The single processing part T3 may have a second transfer region T31, and the second transfer region T31 may be adjacent to the first buffer unit T26. The second transfer device T32 may be installed in the second transfer area T31. The second transfer apparatus T32 may take out the substrate TW from the first buffer unit T26 and send the substrate TW into the second buffer unit T33. The single-unit liquid treatment chamber T34 may be disposed on one side of the first transfer device T32, and the single-unit drying chamber T35 may be disposed on the other side.

The interface T5 may include a lot forming unit (lot forming unit) T51, a transfer unit T52, and a buffer chamber 210A. The buffer chamber 210A may have the same structure as the buffer chamber 210 described above. The transfer unit T52 may transfer the substrate TW transferred to the second buffer unit T33 to the batch forming unit T51, and may also transfer the substrate TW processed by the batch processing section T6 to the unitary liquid processing chamber T34.

The batch processing section T6 has a third transfer area T61, and the third transfer area T61 is adjacent to the interface unit T5. A third transfer device T62 is provided in the third transfer region T61, and the substrate TW may be transferred between devices adjacent to the third transfer region T61. The third transfer apparatus may collectively transfer a plurality of substrates.

The first chemical bath T63, the first rinse bath T64, the second chemical bath T65, the second rinse bath T66, the third chemical bath T67, and the third rinse bath T68 may be adjacent to the batch processing section T6.

In the first chemical bath T63, DHF (dilute hydrofluoric acid) or BHF (mixture of hydrofluoric acid and ammonium fluoride) may be used to remove the native oxide film. In the first rinse solution bath T64, the substrate TW may be treated with deionized water. In the second chemical bath T65, the silicon nitride layer of the silicon oxide layer and the silicon nitride layer may be selectively etched using a phosphoric acid aqueous solution. The second rinse solution bath T66 may treat the substrate TW with deionized water. In the third chemical bath T67, the substrate TW may be treated with SC1 (a mixture of ammonia, hydrogen peroxide, and water), and in the third rinse bath T68, the substrate TW may be treated with deionized water.

Further, the batch processing section T6 may include a first supporting member T71, a first driving member T72, a second supporting member T73, a second driving member T74, a third supporting member T75, a third driving member T763, a fourth supporting member T811, and a fourth driving member T818. Further, the fifth support member T814 may be mounted in the third rinse solution bath T68.

The substrate TW immersed in the third rinse solution bath T68 of the batch processing section T6 can be taken out and fed into the buffer chamber 210A by the transfer unit T52. The buffer chamber 210A may supply a first liquid (water) to the top surface of the substrate TW, and a second liquid (IPA) to the bottom surface of the substrate TW. The transfer unit T52 may have the same and similar structure as the first transfer robot T222 described above.

Fig. 24 is a top view of a substrate processing apparatus according to another embodiment of the inventive concept. Referring to fig. 24, a substrate processing apparatus T10B according to another embodiment of the inventive concept is different from the embodiment of fig. 23 in that a carry-in portion T2A for carrying in a substrate TW and a carry-out portion T2B for taking out the substrate TW are different. The unprocessed substrates TW fed into the feeding section T2A can be transferred to the lot L by the transfer mechanism T57 of the additional interface unit T5, then processed in the batch processing unit T6A, and then fed into the buffer chamber 210B by the transfer robot T58. The buffer chamber 210B may have the same or similar structure as the buffer chambers 210 and 210A described above.

Fig. 25 is a top view of a substrate processing apparatus according to another embodiment of the inventive concept. Referring to fig. 25, a substrate processing apparatus T10C according to another embodiment of the inventive concept is different from the embodiment of fig. 24 in that a plurality of buffer chambers 210C1 and 210C2 are provided. The substrate TW taken out of the batch processing section T6 by the transfer robot T58 may be transferred to the first buffer chamber 210C1, and then is fed into the second buffer chamber 210C2 by the transfer rail T592 and the transfer hand T594. The substrate TW fed into the second buffer chamber 210C2 may be fed into the unitary liquid processing chamber T34 by the transfer robot T68.

In the above-described embodiment, the first liquid and the second liquid are simultaneously supplied as shown in fig. 18, or the second liquid is started to be supplied after a predetermined time elapses after the first liquid starts to be supplied as shown in fig. 19, but the above-described embodiment is not limited thereto. For example, as shown in fig. 26, the supply of the first liquid and the second liquid are started at the same time, but the end time point of the supply of the second liquid may be faster than the end time point of the supply of the first liquid. Since the second liquid (may be IPA) is sufficient to clean and dry the bottom surface of the substrate W, by making the end time point of the supply of the second liquid faster, the problem of the second liquid waste may be minimized. In addition, as shown in fig. 27, the start time point of supplying the second liquid may be later than the start time point of supplying the first liquid, and the end time point of supplying the second liquid may be earlier than the end time point of supplying the first liquid. Also, since the second liquid (may be IPA) is sufficient to clean and dry the bottom surface of the substrate W, the problem of the second liquid waste may be minimized by making the end time point of the second liquid supply faster and delaying the start time point of the second liquid supply.

Further, the top surface of the substrate W described above may be a pattern surface on which a pattern may be formed, and may be referred to as a first surface. Further, the bottom surface of the substrate W described above may be a non-patterned surface on which no pattern is formed, and may be referred to as a second surface.

The effects of the inventive concept are not limited to the above-described effects, and the effects not mentioned may be clearly understood by those skilled in the art to which the inventive concept relates in the specification and drawings.

Although the preferred embodiments of the inventive concept have been shown and described so far, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains may variously implement the inventive concept without departing from the spirit or scope of the inventive concept as claimed in the claims, and that the modification should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising:

a batch processing bath for processing substrates in a batch manner;

a unitary processing chamber for processing a substrate in a unitary manner; and

A buffer chamber positioned on a transfer path of the substrate transferred between the batch type processing chamber and the unitary type processing chamber and supplying a liquid for maintaining a wet state of the substrate.

2. The substrate processing apparatus of claim 1, wherein the buffer chamber comprises:

a chuck for supporting and rotating the substrate; and

and a liquid supply unit for supplying a liquid to the substrate supported and rotated on the chuck.

3. The substrate processing apparatus according to claim 2, wherein the liquid supply unit comprises:

a first liquid supply unit configured to supply a first liquid to a top surface of the substrate supported on the chuck; and

a second liquid supply unit configured to supply a second liquid to a bottom surface of the substrate supported on the chuck.

4. The substrate processing apparatus according to claim 3, wherein the second liquid supply unit is configured to supply the second liquid having higher volatility than the first liquid supplied by the first liquid supply unit.

5. The substrate processing apparatus of claim 4, wherein the second liquid supply unit is configured to supply the second liquid, the second liquid being isopropyl alcohol IPA.

6. The substrate processing apparatus of claim 5, wherein the first liquid supply unit is configured to supply the first liquid, the first liquid being water.

7. The substrate processing apparatus of any one of claims 4 to 6, further comprising a controller configured to control the buffer chamber, and

wherein the controller is configured to control the buffer chamber such that a rotation speed of the chuck becomes 300RPM to 500RPM in a case where the liquid is supplied from the liquid supply unit.

8. The substrate processing apparatus of any one of claims 4 to 6, further comprising a controller configured to control the buffer chamber and the unitary processing chamber, and

wherein the controller is configured to control the buffer chamber and the unitary processing chamber such that a processing time of the substrate in the buffer chamber is shorter than a processing time of the substrate in the unitary processing chamber.

9. The substrate processing apparatus of any of claims 2 to 6, wherein the substrate processing apparatus further comprises a posture-changing processing bath positioned between the batch processing bath and the buffer chamber, and

wherein the liquid stored in the posture-changing processing bath is the same liquid as that supplied by the liquid supply unit.

10. The substrate processing apparatus of any of claims 1 to 6, wherein the unitary processing chamber comprises:

a unitary liquid processing chamber for processing the substrate by supplying a processing liquid to the substrate; and

a unitary drying chamber for performing a drying process on the substrate; and is also provided with

The device further comprises a transfer manipulator for transferring the substrate among the unitary liquid processing chamber, the unitary drying chamber and the buffer chamber.

11. The substrate processing apparatus of claim 10, wherein the transfer robot comprises:

a first hand;

a second hand mounted at a lower elevation than the first hand; and

A third hand mounted at a lower elevation than the second hand.

12. The substrate processing apparatus of claim 11, further comprising a controller configured to control the transfer robot, and

wherein the controller is configured to control the transfer robot such that the first hand is used in a case where the substrate dry-processed at the unitary drying chamber is transferred, the third hand is used in a case where the substrate wet at the buffer chamber is transferred, and the second hand is used in a case where the substrate is transferred from the unitary liquid processing chamber to the unitary drying chamber.

13. The substrate processing apparatus of any one of claims 4 to 6, further comprising a controller configured to control the buffer chamber, and

wherein the controller is configured to control the buffer chamber such that the first liquid starts to be supplied from the first liquid supply unit, and after a set time elapses, the second liquid starts to be supplied from the second liquid supply unit.

14. A buffer chamber, the buffer chamber comprising:

a chuck for supporting and rotating a substrate;

a first liquid supply unit configured to supply a first liquid to a first surface of the substrate supported at the chuck;

a second liquid supply unit configured to supply a second liquid to a second surface of the substrate supported at the chuck, the second liquid having a higher volatility than the first liquid, the second surface being different from the first surface.

15. The buffer chamber of claim 14, wherein the chuck is controlled by a control unit to rotate at a speed of about 300RPM to about 500 RPM.

16. The buffer chamber of claim 14, further comprising:

a treatment cup for recovering the first liquid and the second liquid; and

a lift/lower drive for lifting and lowering the treatment cup, an

Wherein the treatment cup defines at least two recovery paths which are constituted by a plurality of cups and recover different kinds of liquid, and

The lift/lower driver is configured to lift and lower the treatment cup to retrieve the first liquid through any one of the retrieval paths and to retrieve the second liquid through another one of the retrieval paths.

17. A substrate processing apparatus, the substrate processing apparatus comprising:

a first process unit for processing substrates in a batch mode;

a second process unit for processing the substrate in a single manner; and

a controller, an

Wherein the first process unit comprises a batch processing bath for processing a substrate in a vertical posture, and

the second process unit includes:

a unitary liquid processing chamber for liquid processing the substrate by supplying a processing liquid to the rotating substrate;

a unitary drying chamber for dry-treating the substrate by supplying a supercritical fluid to the substrate;

a buffer chamber for supplying a liquid to the substrate so that a wet state of the substrate can be maintained; and

And a transfer robot for transferring the substrate among the buffer chamber, the unitary liquid processing chamber, and the unitary drying chamber.

18. The substrate processing apparatus of claim 17, wherein the first process processing unit comprises:

a posture-changing treatment bath having a storage space for storing a liquid, and positioning a support member for supporting the substrate in the storage space in the vertical posture at the storage space, the posture-changing treatment bath being for changing the substrate in the vertical posture to a horizontal posture;

a posture changing robot having a hand and an arm for moving the hand, the posture changing robot being for changing a posture of the substrate from the vertical posture to the horizontal posture, and

wherein the buffer chamber is positioned at a position to receive the substrate taken out of the posture changing processing bath by the posture changing robot.

19. The substrate processing apparatus of claim 18, wherein the buffer chamber comprises:

a chuck for supporting and rotating the substrate;

a second liquid supply unit configured to supply a second liquid to a bottom surface of the substrate supported on the chuck, the second liquid having a higher volatility than the first liquid.

20. The substrate processing apparatus of claim 18, wherein the substrate processing apparatus further comprises a plurality of unitary liquid processing chambers, and

wherein the plurality of unitary liquid processing chambers are mounted on top of one another and

the buffer chamber is installed at a higher position than a unitary liquid processing chamber installed at the bottom of the plurality of unitary liquid processing chambers and at a lower position than a unitary liquid processing chamber installed at the top of the plurality of unitary liquid processing chambers.