CN117286474A - High-temperature metal shell wafer heater and processing method thereof - Google Patents
High-temperature metal shell wafer heater and processing method thereof Download PDFInfo
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- CN117286474A CN117286474A CN202211692721.4A CN202211692721A CN117286474A CN 117286474 A CN117286474 A CN 117286474A CN 202211692721 A CN202211692721 A CN 202211692721A CN 117286474 A CN117286474 A CN 117286474A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 title claims abstract description 20
- 238000003672 processing method Methods 0.000 title abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 222
- 238000001816 cooling Methods 0.000 claims abstract description 63
- 238000009413 insulation Methods 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 24
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/26—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers or the like
Abstract
The invention discloses a wafer heater with a high-temperature metal shell, which is characterized by comprising a shell, a heat homogenizing plate arranged in the shell, a first insulating heat conducting layer arranged at one end of the heat homogenizing plate, at least 1 heating element, a second insulating heat conducting layer arranged at one side of the first insulating heat conducting layer, which is far away from the heat homogenizing plate, a heat radiating plate arranged at one end of the second insulating heat conducting layer, which is far away from the first insulating heat conducting layer, a cooling assembly arranged at one end of the heat radiating plate, and a plurality of electrodes, wherein the heating element is arranged between the first insulating heat conducting layer and the second insulating heat conducting layer, and the electrodes are electrically connected with the heating element. The invention also discloses a processing method. The invention has good heating effect and high heating efficiency, and can improve the heating efficiency and yield of the wafer.
Description
Technical Field
The invention relates to a ceramic wafer heater used in a chemical vapor deposition device, in particular to a high-temperature metal shell wafer heater and a processing method thereof.
Background
Semiconductor wafers are indispensable for 5G networks, artificial intelligence, autopilot and internet of things, and with the rapid development of semiconductor chip technology, the demand for miniaturization of chip lines is increasing continuously to improve the degree of integration of processing units. The invention takes Chemical Vapor Deposition (CVD) and etching processes as research objects to research how to solve the bottleneck of the preparation process by design optimization along with the improvement of the process requirements.
The wafer heater is a key device for processing semiconductor chips, plays roles of bearing and adsorbing wafers and providing heating, and along with the continuous improvement of process temperature requirements, in order to realize high-uniformity film deposition, very uniform temperature distribution must be realized on the surfaces of the wafers, and the requirements on the temperature distribution on the surfaces of the wafer heater are more severe. Conventional metal wafer heaters suffer from poor uniformity due to internal structural reasons, such as failure of the soaking plate, excessive temperatures, and water cooling requirements at temperatures above 500 ℃. Only the metal heater can be replaced frequently. Or the ceramic heater without aluminum nitride is expensive, and the temperature cannot be quickly increased and decreased, so that the process efficiency is seriously affected.
Therefore, a new processing method of a metal wafer heater is very urgent to find, good temperature control is achieved, the heating and cooling speed of the metal wafer heater is improved, good temperature uniformity is guaranteed when the temperature is higher than 500 ℃, the metal wafer heater can be heated and cooled rapidly, the process efficiency of the wafer is improved, and the cost is reduced. Therefore, a new solution is needed to solve the above problems.
Disclosure of Invention
The invention aims to provide a wafer heater with a high-temperature metal shell, which ensures that the wafer is heated uniformly in the process, and a cooling assembly is integrated inside, so that the uniform cooling is realized, the process temperature is quickly adjusted, and the yield is improved.
The second object of the invention is to provide a processing method, and the processed wafer heater has good heating uniformity and good crack resistance.
In order to achieve the technical purpose and meet the technical requirements, the invention adopts the technical scheme that: the utility model provides a high temperature metal casing wafer heater, its characterized in that, includes the shell, sets up even hot plate in the shell, sets up even hot plate one end first insulating heat conduction layer, at least 1 heating element, set up first insulating heat conduction layer deviates from even hot plate one side second insulating heat conduction layer, set up the second insulating heat conduction layer deviates from heating panel of first insulating heat conduction layer one end, set up cooling module, a plurality of electrodes of heating panel one end, heating element sets up between first insulating heat conduction layer and the second insulating heat conduction layer, the electrode with the heating element electricity links.
As the preferable technical scheme, the number of the heating elements is 3, the 3 heating elements are respectively an outer ring heating element, a middle ring heating element and an inner ring heating element, an outer ring groove, a middle ring groove and an inner ring groove are arranged on the heat homogenizing plate, the outer ring heating element is arranged in the outer ring groove, the middle ring heating element is arranged in the middle ring groove, and the inner ring heating element is arranged in the inner ring groove.
As the preferable technical scheme, even hot plate includes outer ring plate, zhong board and the interior plectane that follow outer lane to centre of a circle evenly spaced setting in proper order, outer lane slot sets up on the outer ring plate, well circle slot sets up on the zhong board, the inner circle slot sets up on the interior plectane.
As the preferable technical scheme, outer lane heating element includes the even first convex heater strip that sets up of a plurality of circumference, the even first connection heater strip that sets up of a plurality of circumference, adjacent 2 first convex heater strip passes through first connection heater strip connects, and wherein 1 first connection heater strip disconnection sets up and forms first outer lane conductive end and second outer lane conductive end, first outer lane conductive end is connected with 1 first outer lane conductive segment, second outer lane conductive end is connected with 1 second outer lane conductive segment, first outer lane conductive segment and second outer lane conductive segment are connected with 1 electrode respectively.
As the preferable technical scheme, the middle ring heating element comprises a plurality of second convex heating wires with evenly arranged circumferences, and a plurality of second connecting heating wires with evenly arranged circumferences, wherein 2 adjacent second convex heating wires are connected through the second connecting heating wires, 2 adjacent second convex heating wires are respectively used as a first middle ring conducting part and a second middle ring conducting part, one end of the first middle ring conducting part, which is close to the second middle ring conducting part, is connected with a first middle ring conducting section, one end of the second middle ring conducting part, which is close to the first middle ring conducting part, is connected with a second middle ring conducting section, and the first middle ring conducting section and the second middle ring conducting section are respectively connected with 1 electrode.
As the preferable technical scheme, the inner ring heating element comprises a first inner ring heating wire, a second inner ring heating wire, a first middle ring heating wire, a second middle ring heating wire and an outer ring heating wire which are symmetrically arranged, wherein one end of the first inner ring heating wire is connected with one end of the first middle ring heating wire through a first connecting section, the other end of the first middle ring heating wire is connected with one end of the second outer ring heating wire through a second connecting section, the other end of the outer ring heating wire is connected with one end of the second middle ring heating wire through a third connecting section, the other end of the second middle ring heating wire is connected with one end of the second inner ring heating wire through a fourth connecting section, the other end of the first inner ring heating wire is connected with a first inner ring conducting section, and the other end of the second inner ring heating wire is connected with a second inner ring conducting section.
As the preferable technical scheme, the cooling assembly comprises a cooling plate, a cooling pipe embedded on the cooling plate, a water inlet pipe and a water outlet pipe, wherein the cooling pipe is provided with a water inlet and a water outlet.
As the preferable technical scheme, the one end of shell is fixed and is provided with the backplate, fixedly on the backplate be provided with the back shaft, the back shaft includes the axle section, fixedly sets up the heat insulation section of axis body one end and sets up the sealed section of heat insulation section one end, the axle section with the backplate is connected, the electrode passes the back shaft.
As an optimal technical scheme, a temperature thermocouple is inserted on the supporting shaft.
The invention also provides a processing method, which comprises the following steps:
step one, adopting pyrolytic graphite to manufacture a uniform heating plate, and adopting an aluminum nitride boron nitride composite plate to manufacture a first insulating heat conduction layer;
processing molybdenum or rhenium into a sheet, and then processing the sheet into a heating element by etching or wire cutting;
embedding the heating element on the first insulating heat conducting layer, and spraying ceramic at one end, embedded with the heating element, of the first insulating heat conducting layer to form a second insulating heat conducting layer;
step four, hot-pressing the first insulating heat-conducting layer sprayed with the second insulating heat-conducting layer in the step three with the uniform heating plate in the step one, selecting a proper electrode, and welding the electrode with the heating element to obtain a heating main body;
step five, adopting graphite foil to manufacture a radiating plate, adopting stainless steel to manufacture a cooling plate and a cooling pipe, and installing the cooling pipe on the cooling plate;
step six, installing the heating main body into the shell, then installing the radiating plate on the second insulating heat conducting layer, and installing the cooling plate provided with the cooling pipe on the radiating plate;
and seventhly, manufacturing a back plate by adopting stainless steel, processing holes in the back plate, and welding the back plate and the shell to obtain the heater.
The beneficial effects of the invention are as follows:
1) The temperature of the heater is quickly controlled by the cooling component through the heat dissipation plate, the requirement of a wafer on the process temperature is met, and the yield and the production efficiency are improved;
2) Preferably, the outer ring heating element, the middle ring heating element and the inner ring heating element are heated in a partitioning mode, each partition can be independently heated, and meanwhile heating efficiency is better after the heating device is started, and heating uniformity is better;
3) Preferably, the 3 separate outer, middle and inner annular plates reduce thermal interference with each other;
4) Preferably, the outer ring heating element, the middle ring heating element and the inner ring heating element respectively have enough heating areas, and have good uniformity and high heating efficiency;
5) Preferably, cooling water is introduced into the cooling pipe to cool the cooling plate, and then cooling and radiating are carried out through the radiating plate;
6) Preferably, the support shaft forms a support and also has a protective effect to protect the electrode;
7) Preferably, the temperature thermocouple can timely feed back the heating temperature, so that the temperature controllability is improved;
8) The processed wafer heater has good heating uniformity and good crack resistance.
Drawings
FIG. 1 is a three-dimensional view provided by one embodiment of the present invention;
FIG. 2 is a partial block diagram provided by one embodiment of the present invention;
FIG. 3 is a cross-sectional view provided by one embodiment of the present invention;
FIG. 4 is a block diagram of a vapor lock plate provided in one embodiment of the present invention;
FIG. 5 is a block diagram of a first insulating and thermally conductive layer provided in accordance with one embodiment of the present invention;
FIG. 6 is a block diagram of a second insulating and thermally conductive layer provided in accordance with one embodiment of the present invention;
FIG. 7 is a block diagram of a heat sink provided by one embodiment of the present invention;
FIG. 8 is a directional diagram of a cooling plate according to one embodiment of the present invention;
FIG. 9 is another directional diagram of a cooling plate provided in one embodiment of the invention;
in fig. 1-9, 1, a housing; 101. a clamping column; 102. a top needle column; 2. a uniform heating plate; 201. an outer ring plate; 202. a middle ring plate; 203. an inner circular plate; 3. a first insulating heat conductive layer; 301. a first insulation trench; 4. a second insulating and heat conducting layer; 401. a second insulation trench; 5. an outer ring heating element; 501. a first male heating wire; 502. the first connecting heating wire; 503. a first outer ring conductive end; 504. a second outer ring conductive end; 505. a first outer ring conductive segment; 506. a second outer ring conductive segment; 6. a middle ring heating element; 601. a second convex heating wire; 602. the second is connected with the heating wire; 603. a first middle-turn conductive portion; 604. a second middle-turn conductive portion; 605. a first middle-turn conductive segment; 606. a second middle-turn conductive segment; 7. an inner ring heating element; 701. a first inner ring heating wire; 702. a second inner ring heating wire; 703. a first middle ring heating wire; 704. a second middle ring heating wire; 705. an outer ring heating wire; 706. a first connection section; 707. a second connection section; 708. a third connecting section; 709. a fourth connecting section; 710. a first inner ring conductive segment; 711. a second inner ring conductive segment; 8. a heat dissipation plate; 9. a cooling assembly; 901. a cooling plate; 9011. an annular heat transfer boss; 902. a cooling tube; 903. a water inlet pipe; 904. a water outlet pipe; 10. an electrode; 11. a back plate; 12. a support shaft; 1201. a shaft section; 1202. a heat insulation section; 1203. a sealing section; 13. a temperature thermocouple; 14. collecting and inserting blocks; 15. collecting pipes; A. a thermocouple mounting hole; B. a top pinhole; C. an electrode mounting hole; D. a return header mounting hole; E. and a clamping column mounting hole.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
The same or similar reference numbers in the drawings of embodiments of the invention correspond to the same or similar components; in the description of the present invention, it should be understood that, if the terms "head", "tail", "top", "bottom", "left", "right", "front", "rear", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings, they are merely for convenience in describing the present invention, and do not indicate or imply that the devices or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, so that the terms describing the positional relationships in the drawings are merely for exemplary illustration, and are not to be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those of ordinary skill in the art according to specific circumstances.
Referring to fig. 1-9, an embodiment of the present invention provides a wafer heater with a high temperature metal casing, which includes a casing 1, a heat homogenizing plate 2 disposed in the casing 1, a first insulating heat conducting layer 3 disposed at one end of the heat homogenizing plate 2, at least 1 heating element, a second insulating heat conducting layer 4 disposed at one end of the first insulating heat conducting layer 3 away from the heat homogenizing plate 2, a heat dissipating plate 8 disposed at one end of the second insulating heat conducting layer 4 away from the first insulating heat conducting layer 3, a cooling component 9 disposed at one end of the heat dissipating plate 8, and a plurality of electrodes 10, wherein the heating element is embedded at one end of the first insulating heat conducting layer 3 toward the second insulating heat conducting layer, and the electrodes 10 are electrically connected with the heating element.
After the heating element is electrified and heated, the heating element is transferred to the heat homogenizing plate 2 through the first insulating heat conducting layer 3, the heat homogenizing plate 2 uniformly conducts heat to the shell 1, so that the effect of uniform heating is achieved, the first insulating heat conducting layer 3 prevents the heating element from being short-circuited, when the heating temperature is required to be reduced, the cooling assembly 9 is started, the cooling assembly 9 cools through the heat radiating plate 8, the process temperature can be rapidly reduced, the overall controllability is stronger, and the production efficiency and the yield are improved.
As shown in fig. 1 to 9, in some embodiments, considering that the heat homogenizing plate 2 needs to have strong heat conductivity to ensure heating efficiency, the heat homogenizing plate 2 is made of pyrolytic graphite, the first insulating heat conducting layer 3 needs to have good insulation property and good heat conductivity, the first insulating heat conducting layer 3 is made of an aluminum nitride boron nitride composite plate, in order to facilitate processing, a ceramic insulating material is sprayed on the surface of the first insulating heat conducting layer 3 by adopting a spraying manner as the second insulating heat conducting layer 4 to separate a heating element from the heat dissipation plate 8, the heat dissipation plate 8 does not need to have particularly good heat conductivity in view of uniform heat dissipation, and a slow cooling process is required to prevent the heat dissipation plate 8 from cracking too fast due to cooling, so the heat dissipation plate 8 is made of graphite foil, and the first insulating heat conducting layer 3 is made of an aluminum nitride boron nitride composite plate.
As shown in fig. 1 to 9, in some embodiments, an electrode mounting hole C is formed in the center of the second insulating and heat conducting layer 4, the power supply 10 passes through, a thermocouple mounting hole a is formed near the electrode mounting hole C, and the second insulating and heat conducting layer 4 may be directly insulated by spraying or using an aluminum nitride substrate, and then ceramic is sprayed on the aluminum nitride substrate.
As shown in fig. 1-9, in some embodiments, the number of heating elements is 3, the 3 heating elements are respectively an outer ring heating element 5, a middle ring heating element 6 and an inner ring heating element 7, an outer ring groove, a middle ring groove and an inner ring groove are arranged on the heat equalizing plate 2, the outer ring heating element 5 is arranged in the outer ring groove, the middle ring heating element 6 is arranged in the middle ring groove, and the inner ring heating element 7 is arranged in the inner ring groove, so that 3 heating areas of the outer ring, the middle ring and the inner ring can be respectively and independently heated, and when three heating devices are simultaneously started, compared with an integral heating element, the heating effect is better, the heating efficiency is higher, and the heating uniformity is better.
As shown in fig. 1 to 9, in some embodiments, the heat homogenizing plate 2 includes an outer ring plate 201, an intermediate ring plate 202 and an inner ring plate 203 which are sequentially and uniformly arranged at intervals from an outer ring to a circle center, an outer ring groove is arranged on the outer ring plate 201, an intermediate ring groove is arranged on the intermediate ring plate 202, an inner ring groove is arranged on the inner ring plate 203, and the outer ring plate 201, the intermediate ring plate 202 and the inner ring plate 203 are arranged at intervals so as not to generate thermal interference, thus ensuring the independence of uniform heat transfer, and further ensuring better overall heating uniformity and higher heating efficiency.
As shown in fig. 1-9, in some embodiments, the outer ring heating element 5 includes a plurality of first convex heating wires 501 with uniformly arranged circumferences, a plurality of first connecting heating wires 502 with uniformly arranged circumferences, and 2 adjacent first convex heating wires 501 are connected through the first connecting heating wires 502, wherein 1 first connecting heating wire 502 is disconnected to form a first outer ring conductive end 503 and a second outer ring conductive end 504, the first outer ring conductive end 503 is connected with 1 first outer ring conductive section 505, the second outer ring conductive end 504 is connected with 1 second outer ring conductive section 506, the first outer ring conductive section 505 and the second outer ring conductive section 506 are respectively connected with 1 electrode 10, that is, the outer ring heating element 5 needs 2 electrodes 10, the first convex heating wires 501 extend towards the outer edge of the first insulating heat conducting layer 3 as much as possible, the first convex heating wires 501 and the first connecting heating wires 502 form a concave-convex structure, so that the whole is paved with the first insulating heat conducting layer 3 as full as possible, and after the first insulating heat conducting layer 3 is heated, the heating effect of the first insulating heat conducting layer is greatly improved.
Further, the middle ring heating element 6 comprises a plurality of second convex heating wires 601 which are uniformly arranged on the circumference, a plurality of second connecting heating wires 602 which are uniformly arranged on the circumference, wherein 2 adjacent second convex heating wires 601 are connected through the second connecting heating wires 602, 2 adjacent second convex heating wires 601 are respectively used as a first middle ring electric conduction part 603 and a second middle ring electric conduction part 604, one end, close to the second middle ring electric conduction part 604, of the first middle ring electric conduction part 603 is connected with a first middle ring electric conduction section 605, one end, close to the first middle ring electric conduction part 603, of the second middle ring electric conduction part 604 is connected with a second middle ring electric conduction section 606, the first middle ring electric conduction section 605 and the second middle ring electric conduction section 606 are respectively connected with 1 electrode 10, the second convex heating wires 601 are similar to the first convex heating wires 501 in structure and are arranged according to different sizes, and the second convex heating wires 601 and the second connecting heating wires 602 are fully paved with the middle ring of the first insulating heat conducting layer 3 as much as possible.
Further, the inner ring heating element 7 includes a first inner ring heating wire 701 and a second inner ring heating wire 702 which are symmetrically arranged, a first middle ring heating wire 703 and a second middle ring heating wire 704 which are symmetrically arranged, and an outer ring heating wire 705, one end of the first inner ring heating wire 701 is connected with one end of the first middle ring heating wire 703 through a first connecting section 706, the other end of the first middle ring heating wire 703 is connected with one end of the outer ring heating wire 705 through a second connecting section 707, the other end of the outer ring heating wire 705 is connected with one end of the second middle ring heating wire 704 through a third connecting section 708, the other end of the second middle ring heating wire 704 is connected with one end of the second inner ring heating wire 702 through a fourth connecting section 709, the other end of the first inner ring heating wire 701 is connected with a first inner ring conducting section 710, the other end of the second inner ring heating wire 702 is connected with a second inner ring conducting section 711, and the whole size of the inner ring heating element 7 is not large, and the heating area can be expanded by adopting a ring structure.
When the electrode 10 is installed, the electrode 10 is grouped into a row by the grouping and collecting plug 14 according to actual wiring, the electrode 10 is welded on the second insulating heat conducting layer 4, 6 electrodes 10 are needed in total, the grouping and collecting plug 14 fixes the 6 electrodes 10 together, the wiring is more convenient, the whole structure is simpler, the installation and the maintenance are convenient, the extending part of the electrode 10 is sleeved by the grouping and collecting pipe 15, and the wiring disorder is prevented.
The whole first insulating heat conducting layer 3 is paved as much as possible through the outer ring heating element 5, the middle ring heating element 6 and the inner ring heating element 7, so that the surface temperature difference is reduced, the heating efficiency is high, the heating uniformity is better, the first insulating heat conducting layer 3 is prevented from cracking, the first insulating heat conducting layer 3 is provided with first heat insulating grooves distributed circumferentially, the second insulating heat conducting layer 4 is provided with corresponding second heat insulating grooves, and in order to facilitate processing, the first heat insulating grooves and the second heat insulating grooves can be processed simultaneously after the second insulating heat conducting layer 4 is sprayed in actual processing.
After the first heat insulation groove and the second heat insulation groove are arranged, a plurality of clamping columns 101 can be arranged on the inner surface of the shell 1, the clamping columns 101 extend out of the first heat insulation groove and the second heat insulation groove to play a limiting role, and clamping column mounting holes E are formed in the heat dissipation plate 8, the cooling plate 901 and the back plate 11 and used for mounting the clamping columns 101.
As shown in fig. 1-9, in some embodiments, the cooling assembly 9 includes a cooling plate 901, a cooling pipe 902 embedded on the cooling plate 901, a water inlet pipe 903 and a water outlet pipe 904, wherein the water inlet pipe 903, the cooling pipe 902 and the water outlet pipe 904 are sequentially connected into an integral structure, the integral structure is formed by bending stainless steel pipes, the cooling pipe 902 is arranged into an annular structure to promote the cooling effect, and the water inlet pipe 903 and the water outlet pipe 904 are symmetrically arranged for convenient installation and are perpendicular to the cooling pipe 902 for convenient water inlet and water outlet.
Further, the cooling plate 901 is provided with a plurality of annular heat transfer bosses 9011 towards one end of the heat radiation plate 8 from the center to the outer edge at uniform intervals, so that heat radiation and cooling are more uniform, the cooling effect is better, the situation that the whole plane of the cooling plate 901 is directly contacted with the heat radiation plate 8 to cause too fast temperature change and crack is avoided, the contact area is reduced, heat conduction loss during heating can be reduced, meanwhile, because ejector pins are used in wafer equipment, ejector pins C are arranged on the shell 1, the backboard 11 and the cooling plate 901 and pass through, hollow ejector pins 102 are arranged on the inner surface of the shell 1, 1 ejector pin C corresponds to 1 ejector pin 102, the ejector pins 102 pass through between the outer ring plate 201 and the middle ring plate 202 and in the first heat insulation groove 301 and the second heat insulation groove 401, the center of the cooling plate 901 is also provided with an arranging hole D for arranging the heat radiation plate 8, and meanwhile, the center of the heat radiation plate 8 is also provided with an arranging hole D for arranging the arranging hole D of the heat radiation plate.
As shown in fig. 1-9, in some embodiments, a back plate 11 is fixedly arranged at one end of a housing 1, a support shaft 12 is fixedly arranged on the back plate 11, the support shaft 12 comprises a shaft section 1201, a heat insulation section 1202 fixedly arranged at one end of the shaft body and a sealing section 1203 arranged at one end of the heat insulation section 1202, the shaft section 1201 is connected with the back plate 11, an electrode 10 penetrates through the support shaft 12, the support shaft 12 is integrally supported and is easy to be installed on a wafer device, the electrode 10 extends out of the support shaft 12 and is inserted into the sealing section 1203 for fixing, a water inlet pipe 903 and a water outlet pipe 904 are both inserted into the sealing section 1203, the shaft section 1201 is connected with the back plate 11 on the housing 1, and when in heating, the shaft section 1201 also conducts a part of heat, and the shaft section 1201 and the sealing section 1203 are separated by the heat insulation section 1202, so that heat transfer is blocked.
Further, the temperature thermocouple 13 is inserted on the supporting shaft 12, the temperature thermocouple 13 is inserted on the sealing section 1203 to be fixed, the position of the temperature thermocouple 13 is adjusted, the heating temperature can be monitored better, the number of the temperature thermocouples 13 is 2, and the accuracy of measured temperature is better.
The invention also provides a processing method of the high-temperature metal shell wafer heater, which comprises the following steps:
firstly, preparing a uniform heating plate 2 by pyrolytic graphite, preparing a first insulating heat conducting layer 3 by cold isostatic pressing of an aluminum nitride boron nitride composite plate, then processing grooves for embedding heating elements on the first insulating heat conducting layer 3, further processing a plurality of first heat insulating grooves 301 on the first insulating heat conducting layer 3, forming two groups of the first heat insulating grooves 301, dividing the first insulating heat conducting layer 3 into an inner ring area, a middle ring area and an outer ring area by the two groups of the first heat insulating grooves 301, wherein the circumferences of the first heat insulating grooves 301 of each group are uniformly arranged, so that thermal interference among all areas can be prevented, heating uniformity is better, heating efficiency is higher, a thermocouple mounting hole A is processed for facilitating temperature measurement of a subsequent temperature thermocouple 13, and a thimble hole C is processed for facilitating entry of a thimble;
secondly, processing molybdenum or rhenium into a sheet, and then processing the sheet into a heating element by etching or wire cutting, wherein the thickness of the sheet is 0.1-0.2mm, the width of a heating wire formed after cutting is 1-2mm, the heat conduction effect of molybdenum and rhenium is good, the heating rate is high, the heating efficiency can be rapidly improved, the processing effect by etching or wire cutting is better, a structure with higher heating efficiency can be processed, compared with the processing method of bending and forming, the processing method is better, the heating element is not easy to break, the whole structure is easy to design, the heating element is subjected to temperature cycle detection and screening, the resistance stability is ensured, the local overheating phenomenon is prevented, and the service life is ensured;
embedding a heating element on the first insulating heat conducting layer 3, spraying ceramic at one end of the first insulating heat conducting layer 3 embedded with the heating element to form a second insulating heat conducting layer 4, then performing hot pressing by a hot pressing process, further spraying a plurality of layers of ceramic from high to low according to the porosity by using atmospheric plasma to form the second insulating heat conducting layer 4, then processing a second heat insulation groove 401 on the second insulating heat conducting layer 4, wherein the shape of the second heat insulation groove 401 is matched with that of the first heat insulation groove 301, and processing a top pinhole C, an electrode mounting hole C and a thermocouple mounting hole A on the second insulating heat conducting layer 4;
step four, hot-pressing the first insulating heat-conducting layer 3 sprayed with the second insulating heat-conducting layer 4 in the step three with the uniform heating plate 2 in the step one, selecting a proper electrode 10, and welding the electrode 10 and a heating element to obtain a heating main body;
fifthly, manufacturing a heat dissipation plate 8 by adopting graphite foil, manufacturing a cooling plate 901 and a cooling pipe 902 by adopting stainless steel, and mounting the cooling pipe 902 on the cooling plate 901;
step six, installing the heating main body into the shell 1, fixedly installing the heating main body in a brazing mode, then installing the heat dissipation plate 8 on the second insulating heat conduction layer 4, and installing the cooling plate 901 provided with the cooling pipe 902 on the heat dissipation plate 8;
and seventhly, manufacturing a back plate 11 by adopting stainless steel, processing each hole on the back plate 11, welding the back plate 11 and the shell 1 to obtain a heater, when the supporting shaft 12 and the temperature thermocouple 13 are arranged, the supporting shaft 12 comprises a shaft section 1201, a heat insulation section 1202 and a sealing section 1203, and the supporting shaft 12 is connected together in a brazing mode, then the temperature thermocouple 13 passes through the thermocouple mounting hole and passes through the supporting shaft 12 to be fixed, the electrode 10 passes through the supporting shaft 12 to be fixed, the shaft section 1201 and the back plate 11 are welded, the supporting shaft 12 is mounted on the back plate 11 to obtain a complete heater, and the temperature thermocouple 13 can also be mounted when the electrode 10 is mounted.
The processing method disclosed by the invention is simple in steps, good in forming effect, high in process efficiency and good in heating efficiency of the obtained heater.
The wafer heater is arranged on a Chemical Vapor Deposition (CVD) and Etching (ETCH) device for processing a semiconductor chip, the heater is electrified and heated to 700 ℃, the surface of the heater is divided into 8-10 sector heating areas, and a precise thermometer is used for measuring the temperature of the sector areas, so that the uniformity of the surface temperature is +/-1 ℃.
The above examples are provided for the purpose of clearly illustrating the invention and are not to be construed as limiting the invention, and other variants and modifications of the various forms may be made by those skilled in the art based on the description, which are not intended to be exhaustive of all embodiments, and obvious variants or modifications of the invention may be found within the scope of the invention.
Claims (10)
1. The utility model provides a high temperature metal casing wafer heater, its characterized in that, includes the shell, sets up even hot plate in the shell, sets up even hot plate one end first insulating heat conduction layer, at least 1 heating element, set up first insulating heat conduction layer deviates from even hot plate one side second insulating heat conduction layer, set up the second insulating heat conduction layer deviates from heating panel of first insulating heat conduction layer one end, set up cooling module, a plurality of electrodes of heating panel one end, heating element sets up between first insulating heat conduction layer and the second insulating heat conduction layer, the electrode with the heating element electricity links.
2. The wafer heater with the high-temperature metal shell according to claim 1, wherein the number of the heating elements is 3, the 3 heating elements are an outer ring heating element, a middle ring heating element and an inner ring heating element, an outer ring groove, a middle ring groove and an inner ring groove are arranged on the uniform heating plate, the outer ring heating element is arranged in the outer ring groove, the middle ring heating element is arranged in the middle ring groove, and the inner ring heating element is arranged in the inner ring groove.
3. The high temperature metal shell wafer heater of claim 2, wherein the soaking plate comprises an outer ring plate, an intermediate ring plate and an inner circular plate which are sequentially and uniformly arranged at intervals from an outer ring to a circle center, the outer ring groove is arranged on the outer ring plate, the intermediate ring groove is arranged on the intermediate ring plate, and the inner ring groove is arranged on the inner circular plate.
4. The high-temperature metal shell wafer heater according to claim 2, wherein the outer ring heating element comprises a plurality of first convex heating wires uniformly arranged on the circumference and a plurality of first connecting heating wires uniformly arranged on the circumference, wherein 2 adjacent first convex heating wires are connected through the first connecting heating wires, 1 first connecting heating wire is disconnected to form a first outer ring conductive end and a second outer ring conductive end, the first outer ring conductive end is connected with 1 first outer ring conductive section, the second outer ring conductive end is connected with 1 second outer ring conductive section, and the first outer ring conductive section and the second outer ring conductive section are respectively connected with 1 electrode.
5. The wafer heater with the high-temperature metal shell according to claim 2, wherein the middle-ring heating element comprises a plurality of second convex heating wires with evenly arranged circumferences, a plurality of second connecting heating wires with evenly arranged circumferences, wherein 2 adjacent second convex heating wires are connected through the second connecting heating wires, wherein 2 adjacent second convex heating wires are respectively used as a first middle-ring conductive part and a second middle-ring conductive part, one end of the first middle-ring conductive part, which is close to the second middle-ring conductive part, is connected with a first middle-ring conductive section, one end of the second middle-ring conductive part, which is close to the first middle-ring conductive part, is connected with a second middle-ring conductive section, and the first middle-ring conductive section and the second middle-ring conductive section are respectively connected with 1 electrode.
6. The wafer heater with the high-temperature metal shell according to claim 2, wherein the inner ring heating element comprises a first inner ring heating wire, a second inner ring heating wire, a first middle ring heating wire, a second middle ring heating wire and an outer ring heating wire which are symmetrically arranged, one end of the first inner ring heating wire is connected with one end of the first middle ring heating wire through a first connecting section, the other end of the first middle ring heating wire is connected with one end of the second outer ring heating wire through a second connecting section, the other end of the outer ring heating wire is connected with one end of the second middle ring heating wire through a third connecting section, the other end of the second middle ring heating wire is connected with one end of the second inner ring heating wire through a fourth connecting section, the other end of the first inner ring heating wire is connected with a first inner ring conducting section, and the other end of the second inner ring heating wire is connected with a second inner ring conducting section.
7. The wafer heater of claim 2, wherein the cooling assembly comprises a cooling plate, a cooling pipe embedded on the cooling plate, a water inlet pipe and a water outlet pipe, and the cooling pipe is provided with a water inlet and a water outlet.
8. The wafer heater of claim 2, wherein a back plate is fixedly arranged at one end of the housing, a support shaft is fixedly arranged on the back plate, the support shaft comprises a shaft section, a heat insulation section fixedly arranged at one end of the shaft body and a sealing section arranged at one end of the heat insulation section, the shaft section is connected with the back plate, and the electrode penetrates through the support shaft.
9. The wafer heater of claim 2, wherein the support shaft is inserted with a thermocouple.
10. A method of processing a high temperature metal shell wafer heater according to any one of claims 2 to 8, comprising the steps of:
step one, adopting pyrolytic graphite to manufacture a uniform heating plate, and adopting an aluminum nitride boron nitride composite plate to manufacture a first insulating heat conduction layer;
processing molybdenum or rhenium into a sheet, and then processing the sheet into a heating element by etching or wire cutting;
embedding the heating element on the first insulating heat conducting layer, and spraying ceramic at one end, embedded with the heating element, of the first insulating heat conducting layer to form a second insulating heat conducting layer;
step four, hot-pressing the first insulating heat-conducting layer sprayed with the second insulating heat-conducting layer in the step three with the uniform heating plate in the step one, selecting a proper electrode, and welding the electrode with the heating element to obtain a heating main body;
step five, adopting graphite foil to manufacture a radiating plate, adopting stainless steel to manufacture a cooling plate and a cooling pipe, and installing the cooling pipe on the cooling plate;
step six, installing the heating main body into the shell, then installing the radiating plate on the second insulating heat conducting layer, and installing the cooling plate provided with the cooling pipe on the radiating plate;
and seventhly, manufacturing a back plate by adopting stainless steel, processing holes in the back plate, and welding the back plate and the shell to obtain the heater.
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| CN202211692721.4A CN117286474A (en) | 2022-12-28 | 2022-12-28 | High-temperature metal shell wafer heater and processing method thereof |
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| CN202211692721.4A CN117286474A (en) | 2022-12-28 | 2022-12-28 | High-temperature metal shell wafer heater and processing method thereof |
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