CN117279218A - Preparation method of multilayer copper-clad ceramic substrate - Google Patents
Preparation method of multilayer copper-clad ceramic substrate Download PDFInfo
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- CN117279218A CN117279218A CN202311332196.XA CN202311332196A CN117279218A CN 117279218 A CN117279218 A CN 117279218A CN 202311332196 A CN202311332196 A CN 202311332196A CN 117279218 A CN117279218 A CN 117279218A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 138
- 239000000758 substrate Substances 0.000 title claims abstract description 128
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910000679 solder Inorganic materials 0.000 claims abstract description 188
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 19
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 78
- 238000000576 coating method Methods 0.000 claims description 74
- 239000011248 coating agent Substances 0.000 claims description 73
- 229920002120 photoresistant polymer Polymers 0.000 claims description 54
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 40
- 239000011889 copper foil Substances 0.000 claims description 34
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 32
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 238000001035 drying Methods 0.000 claims description 30
- 238000005219 brazing Methods 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 9
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000012545 processing Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 163
- 238000004528 spin coating Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical group CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LYRFLYHAGKPMFH-UHFFFAOYSA-N octadecanamide Chemical group CCCCCCCCCCCCCCCCCC(N)=O LYRFLYHAGKPMFH-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical group CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- -1 titanium hydride Chemical compound 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0008—Apparatus or processes for manufacturing printed circuits for aligning or positioning of tools relative to the circuit board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4638—Aligning and fixing the circuit boards before lamination; Detecting or measuring the misalignment after lamination; Aligning external circuit patterns or via connections relative to internal circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The invention discloses a preparation method of a multilayer copper-clad ceramic substrate, wherein the ceramic substrate is selected from any one of aluminum nitride ceramic, aluminum oxide ceramic and silicon nitride ceramic, and a positioning reference hole is preset at the edge of the ceramic substrate, which is caused by the following steps: the three-dimensional structural design of multilayer copper-clad ceramic substrate is used for realizing, therefore, the first copper-clad plate and the second copper-clad plate are aligned and stacked through the positioning reference holes, so that the positions of the first copper-clad plate and the second copper-clad plate are corresponding, the integral alignment is ensured, and the integral processing of the scheme is convenient. The process design is reasonable, the operation difficulty is low, the prepared multilayer copper-clad ceramic substrate realizes the three-dimensional structure lap joint of the copper-clad plates, and the process of the welding part between the two layers of copper-clad plates is improved and optimized, so that no solder residue exists between inner-layer circuit layers, the inner-layer circuit patterns are clear, and the actual processing effect is excellent.
Description
Technical Field
The invention relates to the technical field of copper-clad plates, in particular to a preparation method of a multilayer copper-clad ceramic substrate.
Background
With the increasing of the working voltage and current of the power device and the continuous decrease of the chip size, the power density of the chip is continuously increased, and the reliability of the heat dissipation package of the chip is provided with higher challenges. Advantages of the copper-clad ceramic substrate include: excellent thermal conductivity and pressure resistance, high current carrying capacity, high bonding strength between metal and ceramic, and high reliability, is easy to etch a pattern forming circuit substrate, and has excellent soldering property and aluminum wire bonding property. The preparation technology of the common copper-clad ceramic substrate mainly focuses on the combination of a single ceramic substrate layer and a front copper layer and a back copper layer, and the technology of the multilayer copper-clad ceramic substrate is currently blank.
Based on the situation, the application discloses a preparation method of a multilayer copper-clad ceramic substrate, so as to solve the technical problems.
Disclosure of Invention
The invention aims to provide a preparation method of a multilayer copper-clad ceramic substrate, which aims to solve the problems in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme:
the preparation method of the multilayer copper-clad ceramic substrate comprises the following steps:
(1) Taking a plurality of ceramic substrates, ultrasonically cleaning the ceramic substrates for 10-20min by adopting an acetone solution, ultrasonically cleaning the ceramic substrates for 10-15min by adopting absolute ethyl alcohol, washing the ceramic substrates by deionized water, and respectively presetting positioning reference holes at the edges of the ceramic substrates after drying;
(2) Taking a ceramic substrate with positioning reference holes, coating solder on the surfaces of two sides of the ceramic substrate, drying to form a first solder layer, fixing copper foil on two sides of the ceramic substrate, and carrying out vacuum brazing to obtain a first copper-clad plate;
(3) Spin-coating a first photoresist on the surface of a copper foil at one side, baking and curing for 10-15min at 90-100 ℃, exposing to ultraviolet light, and developing and exposing to form a solder coating area;
sputtering a thin copper layer on one side surface of a solder coating area of a first copper-clad plate by taking pure copper as a target material, coating solder in the solder coating area after sputtering, covering the solder on the thin copper layer, drying to form a second solder layer, removing the first photoresist, sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and drying;
(4) Spin-coating a second photoresist on one side surface of the second solder layer, baking and curing for 10-15min at 90-100 ℃ to expose the second solder layer, developing and exposing to form an inner layer circuit pattern, performing ICP etching to expose the ceramic substrate, removing the second photoresist to form an inner layer circuit, and coating the second solder layer on the surface of the inner layer circuit; sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning and drying;
(5) Taking a ceramic substrate with a positioning reference hole, coating solder on one side surface of the ceramic substrate, and drying to form a third solder layer to obtain a second copper-clad plate; bonding one side of the second copper-clad plate, which is not coated with the third solder layer, on the second solder layer, stacking in an aligned manner through positioning reference holes on the ceramic substrate, bonding copper foil on the third solder layer, and performing vacuum brazing;
and performing graphical treatment on the copper foil on the third solder layer to form an outer-layer circuit, thereby obtaining the multilayer copper-clad ceramic substrate.
In the more optimized scheme, in the step (2), the solder patterns of the first solder layer and the second solder layer attached to the inner layer circuit are consistent with the inner layer circuit pattern.
In the more optimized scheme, in the step (3), the first photoresist is negative photoresist; in step (4), the second photoresist is a positive photoresist.
In the more optimized scheme, in the step (3), the thickness of the first photoresist is h1, the thickness of the second solder layer is h2, and the thickness of the thin copper layer is h3, then 0.9' (h1+h3) < h2+h3 < (h1+h3).
In the more optimized scheme, in the step (3), the thin copper layer sputtering process comprises the following steps: vacuum degree of 2X 10 -4 Pa, sputtering air pressure is 1-2Pa, sputtering power is 30W, and sputtering thickness is 3-5 μm.
In the more optimized scheme, in the step (3), the pattern of the solder coating area is consistent with the pattern of the inner layer circuit, when the width of the inner layer circuit is a, the width of the solder coating area is b, and the distances between the solder coating area and the two ends of the inner layer circuit are c, wherein a=b+2c, and 0.05a < c < 0.1a.
In the more optimized scheme, in the step (2) and the step (6), the vacuum brazing process is as follows: vacuum brazing temperature of 800-950 deg.c, brazing time of 30-40min and vacuum degree of 5 x 10 -3 Pa。
In an optimized scheme, the thickness of the copper foil is 0.1-1mm, the ceramic substrate is any one of aluminum nitride ceramic, aluminum oxide ceramic and silicon nitride ceramic, and the thickness of the ceramic substrate is 0.25-2mm.
In a more optimized scheme, the thicknesses of the first solder layer, the second solder layer and the third solder layer are all 10-50 mu m.
According to the optimized scheme, the multilayer copper-clad ceramic substrate is prepared according to the preparation method of the multilayer copper-clad ceramic substrate.
Compared with the prior art, the invention has the following beneficial effects:
the preparation technology of the copper-clad ceramic substrate is mainly focused on the combination of a single-layer ceramic substrate layer and a front copper layer and a back copper layer, and the technology of the multilayer copper-clad ceramic substrate is currently blank, so the invention discloses a preparation method of the multilayer copper-clad ceramic substrate, and the three-dimensional structure coverage of the copper-clad ceramic substrate is realized.
When the scheme is processed, the ceramic substrate is pretreated, the ceramic substrate is selected from any one of aluminum nitride ceramic, aluminum oxide ceramic and silicon nitride ceramic, and the thickness of the ceramic substrate is 0.25-2mm; the pretreatment process comprises two processes, namely cleaning the surface of a ceramic substrate, and removing impurities and greasy dirt on the surface by adopting acetone, absolute ethyl alcohol and deionized water; secondly, a positioning reference hole is preset at the edge of the ceramic substrate, and the reason is that: the three-dimensional structural design of multilayer copper-clad ceramic substrate is used for realizing, therefore, the first copper-clad plate and the second copper-clad plate are aligned and stacked through the positioning reference holes, so that the positions of the first copper-clad plate and the second copper-clad plate are corresponding, the integral alignment is ensured, and the integral processing of the scheme is convenient.
On the basis of the scheme, the method comprises the steps of preparing a first copper-clad plate, taking a ceramic substrate with positioning reference holes, coating solders on the surfaces of two sides of the ceramic substrate to form a first solder layer, fixing copper foils on the two sides of the ceramic substrate, and carrying out vacuum brazing to obtain the first copper-clad plate; processing an inner layer circuit by taking a first copper-clad plate as a substrate, in a conventional processing technology, performing pre-patterning processing on a copper foil on the upper layer of the first copper-clad plate to form the inner layer circuit, coating a second layer of solder on the inner layer circuit, forming a second solder layer, and performing alignment stacking of the second copper-clad plate and the copper foil through the second solder layer; however, in practical processing, we find that the solder is coated on the circuit after the inner layer circuit is pre-patterned, because the solder is normally in a liquid state, the solder flows between the inner layer circuits during coating to influence the overall pattern precision of the inner layer circuit, therefore, in the scheme design, we spin-coat photoresist on the surface of the copper foil on one side of the first copper-clad plate, bake-cure, expose and develop the copper foil to form a solder coating area, at this moment, the photoresist is coated with photoresist on the surface of the copper foil to form a plurality of groove channel structures (solder coating areas), and the solder is coated in the grooves and dried and cured, so that the problem that the inner layer circuit pattern is unclear due to the solder flowing during solder coating can be effectively avoided, and the subsequent use of the ceramic copper-clad plate is ensured.
Meanwhile, before the solder coating area is coated with the solder, the whole thin copper layer sputtering is carried out on the photoresist surface, and a thin copper layer is formed at the bottom of the solder coating area after sputtering, wherein the existence of the thin copper layer can improve the surface roughness of the solder coating area and can improve the combination property of the solder and the solder coating area; and then coating solder on the thin layer to form a second solder layer.
In the above process, the present application defines the following parameters:
(1) The solder patterns of the first solder layer and the second solder layer which are contacted with the inner circuit are consistent with the inner circuit pattern; the solder coating area pattern is consistent with the inner layer circuit pattern; the first solder layer below the inner circuit is used for connecting the inner circuit copper foil and the ceramic substrate below, the second solder layer is used for connecting the milk layer circuit copper foil and the second copper-clad plate above, and when the second solder layer above the inner circuit and the first solder layer below the inner circuit are coated, the solder pattern shape of the first solder layer can be consistent with the inner circuit pattern, so that the integral combination performance is ensured.
(2) The thickness of the first photoresist is h1, the thickness of the second solder layer is h2, and the thickness of the thin copper layer is h3, 0.9' (h1+h3) < h2+h3 < (h1+h3); after the first photoresist coating and exposure development, a solder coating area is formed on the surface of the substrate, and the whole substrate presents a groove channel shape, because the scheme comprises sputtering a thin copper layer on the solder coating area firstly and then coating solder on the surface of the thin copper layer, the thickness is limited to be ' 0.9 ' (h1+h3) < h2+h3 < (h1+h3) ', under the parameter condition, the second solder layer cannot cross the photoresist groove after being coated, the flowing overflow of the second solder layer is avoided, the process difficulty is reduced, and the whole coating effect is more excellent.
(2) When the width of the inner layer circuit is a, the width of the solder coating area is b, and the distances between the solder coating area and the two ends of the inner layer circuit are c, wherein a=b+2c, and 0.05a < c < 0.1a; the design of the coating thickness of the second solder layer and the shape of the solder coating area is limited in the scheme, and the purpose of the design is to reduce overflow caused by solder flowing during coating, and avoid the overflow from flowing between circuits to influence the work of the subsequent multilayer copper-clad plate; however, after the second solder layer is coated, the photoresist is required to be taken out in the subsequent step, at this time, the upper surface of the first copper-clad plate is presented as an inner circuit, a thin copper layer and a second solder layer, and the second solder layer is still easy to flow and diffuse to the space between the circuits in the high-temperature environment during the subsequent high-temperature soldering, so that in order to avoid the problem, the scheme limits the distances between the solder coating area and the two ends of the inner circuit to be c, and accords with 'a=b+2c, 0.05a < c < 0.1 a', so that the second solder layer keeps a distance from the two ends of the inner circuit, the second solder still does not influence the inner circuit during the vacuum soldering, and meanwhile, the excellent bonding performance between the inner circuit and the second copper-clad plate can be ensured under the parameters.
On the basis of the scheme, after the second solder layer is formed, photoresist is coated again, and patterning of the inner layer circuit is performed through ICP etching, wherein negative photoresist is adopted when the 'photoetching solder coating area is limited', positive photoresist is adopted when the inner layer circuit is photoetched, mask patterns are the same when the inner layer circuit is photoetched, and photoresist is different in selection when the inner layer circuit is photoetched, so that photoresist above the second solder layer cannot be removed when the inner layer circuit is photoetched for the second time, the second solder layer and the thin copper layer can be subjected to surface shielding protection, and the influence of ICP etching on the second solder layer and the thin copper layer is avoided.
The invention discloses a preparation method of a multilayer copper-clad ceramic substrate, which has reasonable process design and low operation difficulty, the prepared multilayer copper-clad ceramic substrate realizes the three-dimensional structure lap joint of copper-clad plates, and the process of the welding part between two layers of copper-clad plates is improved and optimized, so that no solder residue exists between inner-layer circuit layers, the inner-layer circuit patterns are clear, and the actual processing effect is excellent.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
fig. 1 is a schematic structural view of a first copper-clad plate of the present invention;
fig. 2 is a schematic structural diagram of a first copper-clad plate after spin-coating a first photoresist according to the present invention;
fig. 3 is a schematic structural view of a first copper-clad plate after forming a solder-coated region according to the present invention;
fig. 4 is a schematic structural view of a first copper-clad plate after sputtering a thin copper layer according to the present invention;
fig. 5 is a schematic structural view of the first copper-clad plate after the second solder layer is coated in the present invention;
fig. 6 is a schematic structural view of the first copper-clad plate after removing the first photoresist according to the present invention;
FIG. 7 is a schematic view of the structure of the first copper-clad plate after the second photoresist is coated;
FIG. 8 is a schematic view of the structure of a first copper-clad plate after etching an inner circuit according to the present invention;
fig. 9 is a schematic diagram of an alignment stacking structure of a first copper-clad plate and a second copper-clad plate according to the present invention;
FIG. 10 is a schematic diagram of the overall structure of a multilayer copper-clad ceramic substrate after forming an outer layer circuit according to the present invention.
In the figure: 1-first copper-clad plate, 101-ceramic substrate, 102-first solder layer, 103-copper foil, 104-positioning reference hole, 2-first photoresist, 3-solder coating area, 301-thin copper layer, 302-second solder layer, 4-second photoresist, 5-second copper-clad plate and 501-third solder layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The solder specifically comprises the following preparation steps: taking 75wt% of silver powder, 5wt% of titanium hydride powder and 20wt% of copper powder, uniformly stirring, mixing and grinding, and then mixing the mixture with an organic carrier to obtain a solder, wherein the ratio of the alloy mixed powder to the organic carrier is 85wt%:15wt%; the organic carrier comprises 77wt% of organic solvent, 10wt% of adhesive, 8wt% of dispersing agent and 5wt% of thixotropic agent, wherein the organic solvent is terpineol, the adhesive is polyvinyl alcohol, the dispersing agent is stearic acid, and the thixotropic agent is stearic acid amide.
Example 1
The preparation method of the multilayer copper-clad ceramic substrate comprises the following steps:
(1) Taking a plurality of ceramic substrates 101, ultrasonically cleaning the ceramic substrates for 10min by adopting an acetone solution, ultrasonically cleaning the ceramic substrates for 10min by adopting absolute ethyl alcohol, washing the ceramic substrates by deionized water, and respectively presetting positioning reference holes 104 at the edges of the ceramic substrates 101 after drying; the ceramic substrate 101 is aluminum nitride ceramic, and the thickness of the ceramic substrate 101 is 1mm.
(2) Taking a ceramic substrate 101 with positioning reference holes 104, coating solder on the two side surfaces of the ceramic substrate 101, drying to form a first solder layer 102, and fixing a copper foil 103 on a ceramic substrateVacuum brazing is performed on both sides of the plate 101 at 800 ℃ for 40min and 5×10 vacuum -3 Pa, obtaining a first copper-clad plate 1; the thickness of the copper foil 103 is 0.5mm;
(3) Taking a first copper-clad plate 1, spin-coating negative photoresist on the surface of a copper foil 103 at one side, baking and curing for 15min at 90 ℃, exposing to ultraviolet, and developing and exposing to form a solder coating area 3; the pattern of the solder coating area 3 is consistent with the pattern of the inner circuit, when the width of the inner circuit is a, the width of the solder coating area 3 is b, and the distances between the solder coating area 3 and the two ends of the inner circuit are c, then a=b+2c, and c=0.06a.
The pure copper is used as a target material, a thin copper layer 301 is sputtered on one side surface of a solder coating area 3 of a first copper-clad plate 1, and the sputtering process of the thin copper layer 301 is as follows: vacuum degree of 2X 10 -4 Pa, a sputtering gas pressure was 1Pa, a sputtering power was 30W, and a sputtering thickness was 5. Mu.m.
Coating solder in the solder coating area 3 after sputtering, covering the solder on the thin copper layer 301, forming a second solder layer 302 after drying, removing negative photoresist, sequentially ultrasonically cleaning with acetone, absolute ethyl alcohol and deionized water, and drying; the thickness of the first photoresist 2 (negative photoresist) is h1, the thickness of the second solder layer 302 is h2, and the thickness of the thin copper layer 301 is h3, then 0.9' (h1+h3) < h2+h3 < (h1+h3).
(4) Spin-coating positive photoresist on the surface of one side of the second solder layer 302, baking and curing for 15min at 90 ℃ to expose ultraviolet, developing and exposing to form an inner layer circuit pattern, performing ICP etching to expose the ceramic substrate 101, removing the positive photoresist to form an inner layer circuit, and coating the surface of the inner layer circuit with the second solder layer 302; sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning and drying;
(5) Taking a ceramic substrate 101 with a positioning reference hole 104, coating solder on one side surface of the ceramic substrate 101, and drying to form a third solder layer 501 to obtain a second copper-clad plate 5; one side of the second copper-clad plate 5, which is not coated with the third solder layer 501, is attached to the second solder layer 302, and is aligned and stacked through the positioning reference holes 104 on the ceramic substrate 101, and thenThe copper foil 103 is attached to the third solder layer 501 and vacuum soldered; vacuum brazing temperature is 800 ℃, brazing time is 40min, and vacuum degree is 5 multiplied by 10 - 3 Pa，
And then, carrying out patterning treatment on the copper foil 103 on the third solder layer 501 to form an outer layer circuit, wherein the thicknesses of the first solder layer 102, the second solder layer 302 and the third solder layer 501 are 50 mu m. And obtaining the multilayer copper-clad ceramic substrate.
Example 2
The preparation method of the multilayer copper-clad ceramic substrate comprises the following steps:
(1) Taking a plurality of ceramic substrates 101, ultrasonically cleaning the ceramic substrates for 15min by adopting an acetone solution, ultrasonically cleaning the ceramic substrates by adopting absolute ethyl alcohol for 12min, washing the ceramic substrates by adopting deionized water, and respectively presetting positioning reference holes 104 at the edges of the ceramic substrates 101 after drying; the ceramic substrate 101 is aluminum nitride ceramic, and the thickness of the ceramic substrate 101 is 1mm.
(2) Taking a ceramic substrate 101 with positioning reference holes 104, coating solder on the surfaces of two sides of the ceramic substrate 101, drying to form a first solder layer 102, fixing copper foil 103 on two sides of the ceramic substrate 101, and vacuum brazing at 900 ℃ for 35min with a vacuum degree of 5×10 -3 Pa, obtaining a first copper-clad plate 1; the thickness of the copper foil 103 is 0.5mm;
(3) Taking a first copper-clad plate 1, spin-coating negative photoresist on the surface of a copper foil 103 at one side, baking and curing for 12min at 95 ℃, exposing to ultraviolet light, and developing and exposing to form a solder coating area 3; the pattern of the solder coating area 3 is consistent with the pattern of the inner circuit, when the width of the inner circuit is a, the width of the solder coating area 3 is b, and the distances between the solder coating area 3 and the two ends of the inner circuit are c, then a=b+2c, and c=0.06a.
The pure copper is used as a target material, a thin copper layer 301 is sputtered on one side surface of a solder coating area 3 of a first copper-clad plate 1, and the sputtering process of the thin copper layer 301 is as follows: vacuum degree of 2X 10 -4 Pa, a sputtering gas pressure was 1Pa, a sputtering power was 30W, and a sputtering thickness was 5. Mu.m.
Coating solder in the solder coating area 3 after sputtering, covering the solder on the thin copper layer 301, forming a second solder layer 302 after drying, removing negative photoresist, sequentially ultrasonically cleaning with acetone, absolute ethyl alcohol and deionized water, and drying; the thickness of the first photoresist 2 (negative photoresist) is h1, the thickness of the second solder layer 302 is h2, and the thickness of the thin copper layer 301 is h3, then 0.9' (h1+h3) < h2+h3 < (h1+h3).
(4) Spin-coating positive photoresist on the surface of one side of the second solder layer 302, baking and curing for 12min at 95 ℃ to expose ultraviolet, developing and exposing to form an inner layer circuit pattern, performing ICP etching to expose the ceramic substrate 101, removing the positive photoresist to form an inner layer circuit, and coating the surface of the inner layer circuit with the second solder layer 302; sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning and drying;
(5) Taking a ceramic substrate 101 with a positioning reference hole 104, coating solder on one side surface of the ceramic substrate 101, and drying to form a third solder layer 501 to obtain a second copper-clad plate 5; bonding one side of the second copper-clad plate 5, which is not coated with the third solder layer 501, on the second solder layer 302, stacking the second copper-clad plate in alignment through the positioning reference holes 104 on the ceramic substrate 101, bonding the copper foil 103 on the third solder layer 501, and performing vacuum brazing; vacuum brazing temperature is 900 ℃, brazing time is 35min, and vacuum degree is 5 multiplied by 10 - 3 Pa，
And then, carrying out patterning treatment on the copper foil 103 on the third solder layer 501 to form an outer layer circuit, wherein the thicknesses of the first solder layer 102, the second solder layer 302 and the third solder layer 501 are 50 mu m. And obtaining the multilayer copper-clad ceramic substrate.
Example 3
The preparation method of the multilayer copper-clad ceramic substrate comprises the following steps:
(1) Taking a plurality of ceramic substrates 101, ultrasonically cleaning the ceramic substrates for 20min by adopting an acetone solution, ultrasonically cleaning the ceramic substrates for 15min by adopting absolute ethyl alcohol, washing the ceramic substrates by deionized water, and respectively presetting positioning reference holes 104 at the edges of the ceramic substrates 101 after drying; the ceramic substrate 101 is aluminum nitride ceramic, and the thickness of the ceramic substrate 101 is 1mm.
(2) Taking a ceramic substrate 101 with positioning reference holes 104, and forming positioning reference holes on two sides of the ceramic substrate 101The surface is coated with solder, and the first solder layer 102 is formed after drying, copper foil 103 is fixed on both sides of ceramic substrate 101, vacuum brazing is performed at 950 ℃ for 30min, and vacuum degree is 5×10 -3 Pa, obtaining a first copper-clad plate 1; the thickness of the copper foil 103 is 0.5mm;
(3) Taking a first copper-clad plate 1, spin-coating negative photoresist on the surface of a copper foil 103 at one side, baking and curing for 10min at 100 ℃, exposing to ultraviolet light, and developing and exposing to form a solder coating area 3; the pattern of the solder coating area 3 is consistent with the pattern of the inner circuit, when the width of the inner circuit is a, the width of the solder coating area 3 is b, and the distances between the solder coating area 3 and the two ends of the inner circuit are c, then a=b+2c, and c=0.06a.
The pure copper is used as a target material, a thin copper layer 301 is sputtered on one side surface of a solder coating area 3 of a first copper-clad plate 1, and the sputtering process of the thin copper layer 301 is as follows: vacuum degree of 2X 10 -4 Pa, a sputtering gas pressure was 1Pa, a sputtering power was 30W, and a sputtering thickness was 5. Mu.m.
Coating solder in the solder coating area 3 after sputtering, covering the solder on the thin copper layer 301, forming a second solder layer 302 after drying, removing negative photoresist, sequentially ultrasonically cleaning with acetone, absolute ethyl alcohol and deionized water, and drying; the thickness of the first photoresist 2 (negative photoresist) is h1, the thickness of the second solder layer 302 is h2, and the thickness of the thin copper layer 301 is h3, then 0.9' (h1+h3) < h2+h3 < (h1+h3).
(4) Taking the first copper-clad plate 1 processed in the step (3), spin-coating positive photoresist on one side surface of the second solder layer 302, baking and curing for 10min at 100 ℃, exposing by ultraviolet, developing and exposing to form an inner layer circuit pattern, performing ICP etching to expose the ceramic substrate 101, removing the positive photoresist to form an inner layer circuit, and coating the surface of the inner layer circuit with the second solder layer 302; sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning and drying;
(5) Taking a ceramic substrate 101 with a positioning reference hole 104, coating solder on one side surface of the ceramic substrate 101, and drying to form a third solder layer 501 to obtain a second copper-clad plate 5; attaching the side of the second copper-clad plate 5, which is not coated with the third solder layer 501, to the first sideThe two solder layers 302 are stacked in alignment through the positioning reference holes 104 on the ceramic substrate 101, and then the copper foil 103 is attached to the third solder layer 501 for vacuum brazing; vacuum brazing temperature is 950 ℃, brazing time is 30min, and vacuum degree is 5 multiplied by 10 - 3 Pa，
And then, carrying out patterning treatment on the copper foil 103 on the third solder layer 501 to form an outer layer circuit, wherein the thicknesses of the first solder layer 102, the second solder layer 302 and the third solder layer 501 are 50 mu m. And obtaining the multilayer copper-clad ceramic substrate.
Conclusion: the copper-clad plate prepared in the above embodiments 1-3 has clear patterns of the inner layer circuit and the outer layer circuit, no solder residue exists between the inner layer circuits, the solder coating process and the high temperature brazing process do not need to remove the solder residue between the circuits, the process is simple and clear, the practicability is high, and the copper-clad plate can be widely applied to industrial production.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A preparation method of a multilayer copper-clad ceramic substrate is characterized by comprising the following steps: the method comprises the following steps:
(1) Taking a plurality of ceramic substrates (101), ultrasonically cleaning the ceramic substrates for 10-20min by adopting an acetone solution, ultrasonically cleaning the ceramic substrates for 10-15min by adopting absolute ethyl alcohol, washing the ceramic substrates by deionized water, and respectively presetting positioning reference holes (104) at the edges of the ceramic substrates (101) after drying;
(2) Taking a ceramic substrate (101) with positioning reference holes (104), coating solder on the surfaces of two sides of the ceramic substrate (101), drying to form a first solder layer (102), fixing copper foils (103) on two sides of the ceramic substrate (101), and carrying out vacuum brazing to obtain a first copper-clad plate (1);
(3) A first copper-clad plate (1) is taken, a first photoresist (2) is coated on the surface of a copper foil (103) at one side in a spin mode, baking and curing are carried out for 10-15min at the temperature of 90-100 ℃, ultraviolet exposure is carried out, and a solder coating area (3) is formed through development and exposure;
sputtering a thin copper layer (301) on one side surface of a solder coating area (3) of a first copper-clad plate (1) by taking pure copper as a target material, coating solder in the solder coating area (3) after sputtering, covering the solder on the thin copper layer (301), forming a second solder layer (302) after drying, removing the first photoresist (2), sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and drying;
(4) The first copper-clad plate (1) treated in the step (3) is taken, a second photoresist (4) is coated on one side surface of a second solder layer (302) in a spin mode, baking and curing are carried out for 10-15min at the temperature of 90-100 ℃, ultraviolet exposure is carried out, development is carried out, an inner layer circuit pattern is formed, ICP etching is carried out, the etching depth is that a ceramic substrate (101) is exposed, the second photoresist (4) is removed, an inner layer circuit is formed, and the second solder layer (302) is coated on the surface of the inner layer circuit; sequentially adopting acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning and drying;
(5) Taking a ceramic substrate (101) with a positioning reference hole (104), coating solder on one side surface of the ceramic substrate (101), and drying to form a third solder layer (501) to obtain a second copper-clad plate (5); bonding one side of a second copper-clad plate (5) which is not coated with a third solder layer (501) on the second solder layer (302), stacking in an aligned manner through a positioning reference hole (104) on a ceramic substrate (101), bonding a copper foil (103) on the third solder layer (501), and performing vacuum brazing;
and then carrying out patterning treatment on the copper foil (103) on the third solder layer (501) to form an outer-layer circuit, thereby obtaining the multilayer copper-clad ceramic substrate.
2. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: in the step (2), the solder patterns of the first solder layer (102) and the second solder layer (302) attached to the inner circuit are identical to the inner circuit pattern.
3. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: in the step (3), the first photoresist (2) is a negative photoresist; in step (4), the second photoresist (4) is a positive photoresist.
4. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: in the step (3), the thickness of the first photoresist (2) is h1, the thickness of the second solder layer (302) is h2, and the thickness of the thin copper layer (301) is h3, then 0.9' (h1+h3) < h2+h3 < (h1+h3).
5. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: in the step (3), the sputtering process of the thin copper layer (301) is as follows: vacuum degree of 2X 10 -4 Pa, sputtering air pressure is 1-2Pa, sputtering power is 30W, and sputtering thickness is 3-5 μm.
6. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: in the step (3), the pattern of the solder coating area (3) is consistent with the pattern of the inner layer circuit, when the width of the inner layer circuit is a, the width of the solder coating area (3) is b, the distances between the solder coating area (3) and the two ends of the inner layer circuit are c, and a=b+2c, and 0.05a < c < 0.1a.
7. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: in the step (2) and the step (6), the vacuum brazing process is as follows: vacuum brazing temperature of 800-950 deg.c, brazing time of 30-40min and vacuum degree of 5 x 10 -3 Pa。
8. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: the thickness of the copper foil (103) is 0.1-1mm, the ceramic substrate (101) is any one of aluminum nitride ceramic, aluminum oxide ceramic and silicon nitride ceramic, and the thickness of the ceramic substrate (101) is 0.25-2mm.
9. The method for manufacturing a multilayer copper-clad ceramic substrate according to claim 1, wherein: the thicknesses of the first solder layer (102), the second solder layer (302) and the third solder layer (501) are all 10-50 mu m.
10. A multilayer copper-clad ceramic substrate produced by the production method of a multilayer copper-clad ceramic substrate according to any one of claims 1 to 9.
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