CN117277971A - Amplifier bias circuit device for improving isolation of radio frequency channel - Google Patents
Amplifier bias circuit device for improving isolation of radio frequency channel Download PDFInfo
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- CN117277971A CN117277971A CN202311135613.1A CN202311135613A CN117277971A CN 117277971 A CN117277971 A CN 117277971A CN 202311135613 A CN202311135613 A CN 202311135613A CN 117277971 A CN117277971 A CN 117277971A
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- pass filter
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- 238000002955 isolation Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses an amplifier bias circuit device for improving the isolation of a radio frequency channel, which is provided with a port 1, a port 2 and a port 3, wherein the port 1 is connected with the input end of a broadband amplifier, the port 2 is connected with the output end of the broadband amplifier, and the port 3 is connected with the input voltage end; a resistor R1, an inductor L1, a filter capacitor C3 and a low-pass filter device A1 are arranged in the amplifier bias circuit device, wherein one end of the resistor R1 is connected with a port 3 through the inductor L1 and the low-pass filter device A1 in sequence, the other end of the resistor R1 is respectively connected with the port 1 and the port 2, and the filter capacitor C3 is connected with a circuit between the inductor L1 and the low-pass filter device A1 through a circuit; the resistor R1, the inductor L1, the filter capacitor C3 and the low-pass filter device A1 are arranged on the LTCC substrate by adopting a three-dimensional stacking method. The invention provides a new implementation scheme for improving the isolation of the radio frequency channels under the condition of sharing a power supply for the multi-channel radio frequency component in the field of broadband microwaves.
Description
Technical Field
The invention belongs to the technical field of broadband microwaves of UHF-S frequency bands, and particularly relates to an amplifier bias circuit device for improving isolation of a radio frequency channel.
Background
The broadband microwave circuit from UHF to S frequency band is mainly used for a radio frequency or intermediate frequency signal processing part at a system level, along with the miniaturization requirement of the system, the application of a multi-channel radio frequency component internally integrating a plurality of simultaneously working radio frequency channels is more and more wide, and for a high-dynamic system, the sensitivity and the dynamics of the system are determined by the isolation of the radio frequency channels.
For a broadband microwave circuit from UHF to S frequency bands, the used broadband amplifier needs to have the remarkable characteristics of excellent flatness, high output P-1, good temperature applicability and the like, and because of the technical reasons, an external bias circuit is generally needed to perform circuit optimization matching, and meanwhile, high-frequency signals are filtered to prevent crosstalk of the power supply by the high-frequency signals.
As shown in fig. 1, the common bias circuit is connected by using packaging equipment, and the parasitic parameters of the common bias circuit often cause the filtering performance of the high-frequency signal to be poor under the high-frequency condition, so that the broadband microwave signal can cross-talk among multiple channels through a power supply, and the isolation between channels is affected under the condition of sharing the power supply by multiple channels.
Disclosure of Invention
The invention aims at: in order to overcome the problems in the prior art, an amplifier bias circuit device for improving the isolation of a radio frequency channel is disclosed, and a new implementation scheme is provided for improving the isolation of the radio frequency channel under the condition of sharing a power supply for a multi-channel radio frequency component in the field of broadband microwaves.
The low-pass filter circuit of the LTCC is integrated in the amplifier bias circuit device, and the parasitic parameters of the low-pass filter based on the LTCC process are superior to those of the packaging device, so that parasitic pass bands generated by the common bias circuit in a high frequency band are avoided, the inhibition characteristic of high-frequency signals is improved, and the channel isolation is improved.
The aim of the invention is achieved by the following technical scheme:
an amplifier bias circuit device for improving isolation of a radio frequency channel is provided with a port 1, a port 2 and a port 3, wherein the port 1 is connected with an input end of a broadband amplifier, the port 2 is connected with an output end of the broadband amplifier, and the port 3 is connected with an input voltage end;
a resistor R1, an inductor L1, a filter capacitor C3 and a low-pass filter device A1 are arranged in the amplifier bias circuit device, wherein one end of the resistor R1 is connected with the port 3 through the inductor L1 and the low-pass filter device A1 in sequence, the other end of the resistor R1 is connected with the port 1 and the port 2 respectively, and the filter capacitor C3 is connected with a circuit between the inductor L1 and the low-pass filter device A1 through a circuit;
the resistor R1, the inductor L1, the filter capacitor C3 and the low-pass filter device A1 are arranged on the LTCC substrate by adopting a three-dimensional stacking method.
According to a preferred embodiment, a capacitor C1 and an amplifier AMP are arranged in sequence between the broadband amplifier input and the port 1; a capacitor C2 is arranged between the port 2 and the output end of the amplifier.
According to a preferred embodiment, the filter capacitor C3 and the inductor L1 are soldered to the LTCC substrate surface.
According to a preferred embodiment, the inductance L1 is implemented based on a metal spiral inductance inside the LTCC substrate.
According to a preferred embodiment, the LTCC substrate has a plurality of resistor blocks on the surface thereof as the resistor R2, and the resistance value of the resistor R2 is adjusted by shorting the unused resistor blocks by using a gold wire.
According to a preferred embodiment, the low-pass filter device A1 is realized by wiring within the substrate LTCC.
According to a preferred embodiment, the low-pass filter device A1 is implemented by means of series inductance and parallel capacitance, by implementing part of the circuit in a single layer, and then by means of perforation to other layers, three-dimensional interconnection transmission is implemented.
According to a preferred embodiment, the series inductor in the low-pass filter device A1 is not limited to be implemented in the form of planar spiral inductor or 3D spiral inductor, and the inductance value is implemented by adjusting the line width, line distance and turns parameters according to design requirements; the parallel connection of the low-pass filter device A1 to the ground capacitance is not limited to the implementation of the toe-crossing capacitance or the ground plate capacitance.
According to a preferred embodiment, the LTCC substrate is patterned using a thick film process. Therefore, the low-pass filter device A1 has the capability of bearing a large current, and the resistance value between the two ports is extremely low, so that no voltage drop is generated.
According to a preferred embodiment, the LTCC substrate is provided with pads 1, 2 and 3 at the bottom thereof, corresponding to ports 1, 2 and 3, respectively.
The foregoing inventive concepts and various further alternatives thereof may be freely combined to form multiple concepts, all of which are contemplated and claimed herein. Various combinations will be apparent to those skilled in the art from a review of the present disclosure, and are not intended to be exhaustive or all of the present disclosure.
The invention has the beneficial effects that:
1. compared with the traditional bias circuit, the LTCC low-pass filter circuit integrated inside the amplifier bias circuit device can better filter broadband high-frequency microwave signals, avoid crosstalk on power supplies, and improve isolation between channels under the condition of public power supplies.
2. The amplifier bias circuit device can flexibly adjust bias resistance, integrate inductance in an internal circuit and save volume.
And 3, the LTCC adopts a thick film process to manufacture a metal pattern, and the thickness of the metal is controllable, so that the LTCC has the capability of bearing larger current.
4. If the inductance L1 of the bias circuit is smaller, the inductance L can be directly realized by adopting a metal spiral inductance in the LTCC, and the volume can be saved.
5. The device realizes three-dimensional integration of the capacitor, the resistor, the inductor and the low-pass filter through the LTCC technology, and greatly reduces the volume.
Drawings
FIG. 1 is a schematic diagram of a conventional bias circuit;
FIG. 2 is a schematic diagram of an amplifier bias circuit arrangement application of the present invention;
FIG. 3 is a schematic diagram of an amplifier bias circuit arrangement of the present invention;
FIG. 4 is a schematic cross-sectional view of an LTCC substrate of the amplifier bias circuit device of the present invention;
FIG. 5 is a schematic diagram of the bottom of an LTCC substrate of the amplifier bias circuit device of the present invention;
FIG. 6 is a schematic diagram of the top of an LTCC substrate of the amplifier bias circuit device of the present invention;
FIG. 7 is a schematic circuit diagram of a low pass filter device A1 in the amplifier bias circuit device of the present invention;
fig. 8 is a schematic diagram of a typical frequency response of the low-pass filter device A1 in the amplifier bias circuit device in the embodiment.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, in the present invention, if a specific structure, connection relationship, position relationship, power source relationship, etc. are not specifically written, the structure, connection relationship, position relationship, power source relationship, etc. related to the present invention can be known by those skilled in the art without any creative effort.
Example 1:
referring to fig. 2 to 7, the present embodiment discloses an amplifier bias circuit device for improving isolation of a radio frequency channel.
Aiming at the multichannel amplifying circuit of the common power supply, the working frequency is 0.2-4GHz, and the amplifier bias circuit of each channel uses an external bias circuit to match and supply power.
Referring to the circuit structure shown in fig. 3, the embodiment designs an amplifier bias circuit device for improving the isolation of radio frequency channels, so that the isolation between channels is greatly improved.
As shown in fig. 2, the port 1 of the present amplifier bias circuit device is connected to the input end of the wideband amplifier, the port 2 is connected to the output end of the wideband amplifier, and the port 3 is connected to the input voltage.
As shown in fig. 3, the internal functions of the amplifier bias circuit device are shown as an adjustable resistor R1, an inductor L1, a filter capacitor C1 and an LTCC substrate 4.
As shown in fig. 4, C1 and L1 of the bias circuit device of the present amplifier are soldered on the LTCC substrate 4, so as to provide a suitable bias matching circuit for the amplifier.
As shown in fig. 5, the bottom of the LTCC substrate 4 has a pad 1, a pad 2, and a pad 3 corresponding to the interface end 1, the port 2, and the port 3, respectively, where 1 and 2 are 50ohm matched.
As shown in fig. 6, the resistor R1 is a plurality of resistor blocks formed on the surface of the LTCC substrate. And shorting the unused resistor blocks by using a gold wire, and adjusting the resistance value.
The LTCC substrate 4 is internally composed of two paths, wherein the branches from the port 1 to the port 2 can realize 50ohm interconnection of radio frequency signals, and the low-pass filter device A1 connected with the port 3 is realized through wiring in the LTCC, so that the circuit structure shown in fig. 3 is realized.
The resistance value of two ports of the filter of the low-pass filter device A1 is about 0.002 ohm, and the current demand of the amplifier can be met through 0.3A current. Referring to fig. 8, F1 is 400mhz, F2 is 600mhz, f3=1 GHz, f4=1.5 GHz, f5=4 GHz, and higher suppression capability for high-frequency signals is achieved, thereby improving isolation between channels from the power supply level.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. The amplifier bias circuit device for improving the isolation of the radio frequency channel is characterized by being provided with a port 1, a port 2 and a port 3, wherein the port 1 is connected with the input end of the broadband amplifier, the port 2 is connected with the output end of the broadband amplifier, and the port 3 is connected with the input voltage end;
a resistor R1, an inductor L1, a filter capacitor C3 and a low-pass filter device A1 are arranged in the amplifier bias circuit device, wherein one end of the resistor R1 is connected with the port 3 through the inductor L1 and the low-pass filter device A1 in sequence, the other end of the resistor R1 is connected with the port 1 and the port 2 respectively, and the filter capacitor C3 is connected with a circuit between the inductor L1 and the low-pass filter device A1 through a circuit;
the resistor R1, the inductor L1, the filter capacitor C3 and the low-pass filter device A1 are arranged on the LTCC substrate by adopting a three-dimensional stacking method.
2. The amplifier bias circuit device of claim 1, wherein a capacitor C1 and an amplifier AMP are sequentially provided between the broadband amplifier input terminal and the port 1; a capacitor C2 is arranged between the port 2 and the output end of the amplifier.
3. The amplifier bias circuit arrangement of claim 1, wherein said filter capacitor C3 and inductor L1 are soldered to LTCC substrate surface.
4. The amplifier bias circuit arrangement of claim 1, wherein said inductance L1 is implemented based on a metal spiral inductance inside an LTCC substrate.
5. The amplifier bias circuit device of claim 1, wherein the LTCC substrate has a plurality of resistor blocks on a surface thereof as a resistor R2, and the resistor R2 is adjusted by shorting the unused resistor blocks with a gold wire.
6. The amplifier bias circuit arrangement of claim 1, wherein said low pass filter means A1 is implemented by wiring within a substrate LTCC.
7. The amplifier bias circuit arrangement of claim 6, wherein said low pass filter means A1 is implemented as series inductors and parallel capacitors by implementing part of the circuit in a single layer, followed by three-dimensional interconnect transmission through vias to other layers.
8. The amplifier bias circuit device of claim 7, wherein the series inductance of the low pass filter device A1 is not limited to be realized in the form of planar spiral inductance or 3D spiral inductance, and the inductance value is realized by adjusting the line width, line spacing and number of turns parameters according to design requirements;
the parallel connection of the low-pass filter device A1 to the ground capacitance is not limited to the implementation of the toe-crossing capacitance or the ground plate capacitance.
9. The amplifier bias circuit device of claim 1, wherein said LTCC substrate is patterned using a thick film process.
10. The amplifier bias circuit arrangement of claim 1, wherein the LTCC substrate bottom is provided with pads 1, 2, and 3 corresponding to ports 1, 2, and 3, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311135613.1A CN117277971A (en) | 2023-09-04 | 2023-09-04 | Amplifier bias circuit device for improving isolation of radio frequency channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311135613.1A CN117277971A (en) | 2023-09-04 | 2023-09-04 | Amplifier bias circuit device for improving isolation of radio frequency channel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117277971A true CN117277971A (en) | 2023-12-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311135613.1A Pending CN117277971A (en) | 2023-09-04 | 2023-09-04 | Amplifier bias circuit device for improving isolation of radio frequency channel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117277971A (en) |
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2023
- 2023-09-04 CN CN202311135613.1A patent/CN117277971A/en active Pending
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