CN111564426A - Radio frequency front-end module, radio frequency communication device and electronic equipment - Google Patents

Radio frequency front-end module, radio frequency communication device and electronic equipment Download PDF

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Publication number
CN111564426A
CN111564426A CN202010479703.2A CN202010479703A CN111564426A CN 111564426 A CN111564426 A CN 111564426A CN 202010479703 A CN202010479703 A CN 202010479703A CN 111564426 A CN111564426 A CN 111564426A
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CN
China
Prior art keywords
layer
end module
radio frequency
ground
electrode layer
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Pending
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CN202010479703.2A
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Chinese (zh)
Inventor
李毅
刘建国
万明
周超
吴沙鸥
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Shenzhen Taotao Technology Co ltd
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Shenzhen Taotao Technology Co ltd
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Priority to CN202010479703.2A priority Critical patent/CN111564426A/en
Publication of CN111564426A publication Critical patent/CN111564426A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/0003—Software-defined radio [SDR] systems, i.e. systems wherein components typically implemented in hardware, e.g. filters or modulators/demodulators, are implented using software, e.g. by involving an AD or DA conversion stage such that at least part of the signal processing is performed in the digital domain
    • H04B1/0007—Software-defined radio [SDR] systems, i.e. systems wherein components typically implemented in hardware, e.g. filters or modulators/demodulators, are implented using software, e.g. by involving an AD or DA conversion stage such that at least part of the signal processing is performed in the digital domain wherein the AD/DA conversion occurs at radiofrequency or intermediate frequency stage
    • H04B1/0017—Digital filtering
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Abstract

The application discloses radio frequency front end module, radio frequency communication device and electronic equipment. The radio frequency front end module comprises a substrate, a filter circuit and a frequency divider. The base plate comprises a plurality of dielectric layers and a plurality of conducting layers, wherein the dielectric layers are arranged in a stacked mode, the conducting layers are formed on the dielectric layers respectively, at least 2 conducting layers in the base plate are matched to form a filter circuit, and at least 2 conducting layers in the base plate are matched to form a frequency divider. The base plate of the radio frequency front-end module adopts a multilayer structure design, the conducting layers are arranged in a stacked mode, the conducting layers are separated through the dielectric layers, so that the frequency divider and the filter circuit are integrated in the packaging base plate, the control chip and other discrete devices are installed on the packaging base plate, integration of passive devices is achieved in a small size, and the size and the cost are greatly reduced.

Description

Radio frequency front-end module, radio frequency communication device and electronic equipment
Technical Field
The present application relates to the field of radio frequency communication technologies, and in particular, to a radio frequency front end module, a radio frequency communication device, and an electronic apparatus.
Background
In the related art, the SoC may form a device module In a System-on-a-Chip (SoC) integration manner or a System In a Package (SIP) manner. In which a system-on-chip may integrate all or part of the necessary functions into a single chip by integrating the complete system on a single chip via an integrated circuit. However, for wireless communication applications, the integration level that can be realized by the system on chip is relatively low and the performance is difficult to meet because the rf chip is difficult to realize by the silicon plane process. How to design a radio frequency front end module structure to improve the integration level of the module so as to meet the miniaturization requirement of radio frequency front end electronic components becomes a technical problem to be solved.
Disclosure of Invention
The embodiment of the application provides a radio frequency front end module, a radio frequency communication device and electronic equipment.
The radio frequency front end module of this application embodiment includes base plate, filter circuit and frequency divider, the base plate is including a plurality of dielectric layers of range upon range of setting and forming in a plurality of respectively the conducting layer of dielectric layer, at least 2 in the base plate the conducting layer cooperation forms filter circuit, at least 2 in the base plate the conducting layer cooperation forms the frequency divider.
The base plate of the radio frequency front-end module of the embodiment of the application adopts a multilayer structure design, and is formed with the conducting layers which are arranged in a stacked mode, the conducting layers are separated through the dielectric layers, so that the frequency divider and the filter circuit are integrated in the packaging base plate, the control chip and other discrete devices are installed on the packaging base plate, and therefore integration of passive devices is achieved in a small size, and the size and the cost are greatly reduced.
In some embodiments, the conductive layer includes a first ground layer, and a first electrode layer and a second electrode layer located on two adjacent sides of the first ground layer, and the first ground layer, the first electrode layer, and the second electrode layer cooperate to form the filter circuit.
In some embodiments, the radio frequency module includes a low noise amplifier, the first electrode layer and the first ground layer form a first ground capacitor, and the first electrode layer is connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.
In some embodiments, the second electrode layer forms a second capacitance to ground with the first ground layer, and the second electrode layer connects a power input of the low noise amplifier to filter a power signal of the low noise amplifier.
In some embodiments, the conductive layer includes a connection layer on a surface of the substrate, the connection layer includes a plurality of connection points, and the low noise amplifier is electrically connected to the filter circuit through the plurality of connection points.
In some embodiments, at least 2 adjacent ones of the conductive layers forming the frequency divider include inductor traces, and the inductor traces of the at least 2 adjacent conductive layers are sequentially connected in a spiral shape to form an inductor.
In some embodiments, the number of the inductors is multiple, and the inductor traces forming different inductors are staggered in a stacking direction.
In some embodiments, at least 2 adjacent ones of the conductive layers forming the frequency divider include capacitive plates, and the capacitive plates corresponding in position in the 2 adjacent conductive layers form a capacitance.
In some embodiments, the conductive layer forming the frequency divider includes a second ground layer and a third electrode layer adjacent to the second ground layer, the third electrode layer including a plurality of capacitive plates forming a plurality of capacitances with the second ground layer.
The radio frequency communication device of the embodiment of the application comprises an antenna and the radio frequency front end module of any embodiment, and the frequency divider is connected with the antenna.
The electronic device of the embodiment of the present application includes the radio frequency communication apparatus described in the above embodiment.
In the radio frequency communication device and the electronic device in the embodiment of the application, the substrate of the radio frequency front-end module is designed in a multilayer structure, the conducting layers are arranged in a stacked mode, the conducting layers are separated through the dielectric layer, so that the frequency divider and the filter circuit are integrated in the packaging substrate, the control chip and other discrete devices are installed on the packaging substrate, integration of passive devices is achieved in a small size, and the size and the cost are greatly reduced.
Additional aspects and advantages of embodiments of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a block diagram of a radio frequency communication device according to an embodiment of the present application.
Fig. 2 is a schematic perspective view of a substrate according to an embodiment of the present application.
Fig. 3 is another schematic perspective view of the substrate according to the embodiment of the present disclosure.
Fig. 4 is a schematic perspective view of a substrate according to an embodiment of the present application.
Fig. 5 is a schematic perspective view of a substrate according to an embodiment of the present disclosure.
Fig. 6 is a schematic view of a layered structure of a substrate according to an embodiment of the present application.
Fig. 7 is a perspective view of a substrate according to an embodiment of the present application.
Fig. 8 is a schematic plan view of one layer of a multilayer structure in a substrate according to an embodiment of the present application.
Fig. 9 is a schematic plan view of another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 10 is a schematic plan view of another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 11 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 12 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 13 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 14 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 15 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 16 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 17 is a schematic plan view of another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 18 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 19 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 20 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 21 is a schematic plan view of yet another layer of the multilayer structure in the substrate according to the embodiment of the present application.
Fig. 22 is a schematic circuit diagram of a frequency divider according to an embodiment of the present application.
Description of the main element symbols:
the radio frequency communication device 1000, the radio frequency front end module 100, the substrate 10, the first surface 11, the second surface 12, the dielectric layer 13, the conductive layer 14, the device connection layer 141, the device connection point 1411, the first electrode layer 142, the first electrode 1421, the first ground layer 143, the first ground electrode 1431, the second electrode layer 144, the second electrode 1441, the low noise amplifier radio frequency output connection line 1442, the frequency divider conductive layer 145, the capacitor plate 1451, the inductor wire 1452, the third electrode layer 146, the second ground layer 147, the second ground plate 1471, the hollow region 1472, the input/output connection layer 148, the input/output connection point 1481, the filter circuit 15, the frequency divider 16, the first port 161, the second port 162, the third port 163, the LC parallel circuit 163, the first LC series circuit 164, the second LC series circuit 165, the third LC series circuit 166, the via hole 17, and the antenna 200.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative and are only for the purpose of explaining the present application and are not to be construed as limiting the present application.
For a system-on-chip, the SIP package can be a planar 2D package of a multi-chip module, and the structure of a 3D package can be reused to effectively reduce the package area, and the system-on-chip can be diversified in combination by matching with different internal bonding technologies through different chip arrangement modes, so that the system-on-chip has high flexibility.
Among them, module division and circuit design are important factors of the SIP packaging technology. The module division means that a function is separated, so that the subsequent whole machine integration and the SIP packaging are facilitated. The circuit design takes into account details inside the module, the relationship of the module to the outside, the integrity of the signal (delay, distribution, noise, etc.). The present application provides a radio frequency front end module 100, a radio frequency communication device 1000 and an electronic device (not shown) based on the SIP packaging technology.
Referring to fig. 1-21, an rf front end module 100 according to an embodiment of the present disclosure includes a substrate 10, a filter circuit 15, and a frequency divider 16. The substrate 10 includes a plurality of dielectric layers 13 stacked on top of each other and a plurality of conductive layers 14 respectively formed on the dielectric layers 13, at least 2 conductive layers 14 in the substrate 10 cooperate to form a filter circuit 15, and at least 2 conductive layers 14 in the substrate 10 cooperate to form a frequency divider 16.
The rf front-end module 100 according to the embodiment of the present application may be applied to the rf communication device 1000 according to the embodiment of the present application. That is, the radio frequency communication device 1000 according to the embodiment of the present application includes the radio frequency front end module 100 according to the embodiment of the present application.
The radio frequency communication device 1000 according to the embodiment of the present application can be applied to an electronic apparatus according to the embodiment of the present application. That is, the electronic device according to the embodiment of the present application includes the radio frequency communication apparatus 1000 according to the embodiment of the present application.
In the electronic device and the radio frequency communication apparatus 1000 according to the embodiment of the present application, the substrate 10 of the radio frequency front-end module 100 is designed to have a multilayer structure, and the conductive layers 14 are stacked, the plurality of conductive layers 14 are separated by the dielectric layer 13, so that the frequency divider 16 and the filter circuit 15 are integrated in the package substrate 10, and the control chip and other discrete devices are mounted on the package substrate 10, thereby realizing integration of passive devices in a small volume, and greatly reducing the volume and the cost.
In some embodiments, the multilayer structure of the substrate 10 may be manufactured by a multilayer organic thin film process, a multilayer low temperature co-fired ceramic process, a multilayer printed circuit board process, a semiconductor build-up circuit process, or the like.
Thus, passive devices such as transmission lines, inductors, capacitors and the like can be embedded in the substrate 10, active devices can be placed on the surface of the substrate, and the layers are connected through holes, so that the design that the frequency divider 16 and the filter circuit 15 are integrated in the substrate 10 is realized.
Referring to fig. 2, 3 and 8, in some embodiments, the substrate 10 includes a first surface 11 and a second surface 12 opposite to each other. The conductive layer 14 includes a device connection layer 141 on the first surface 11 and an input-output connection layer 148 on the first surface 11.
The active device can be mounted on the first surface 11 and electrically connected to the substrate 10 through the device connection layer 141, and the input/output connection layer 148 is used for connecting external circuits, and serves as an input/output interface of the whole rf front-end module 100.
Referring to fig. 7, in some embodiments, the dielectric layers 13 and the conductive layers 14 may be formed with vias 17, and the conductive layers 14 may be electrically connected through the vias 17.
Specifically, the vias 17 of the dielectric layer 13 may pass conductive traces to connect any 2 conductive layers 14, and the vias 17 on the conductive layers 14 may pass conductive traces to connect the 2 conductive layers 14 at intervals. The frequency divider 16 and the filter circuit 15 can be formed by reasonably designing the via holes 17 according to the connection mode of the internal inductance and capacitance of the substrate 10.
In some embodiments, the dielectric layer 13 is provided with vias 17 circumferentially offset from the conductive layer 14.
In this way, the active devices mounted on the first surface 11 can be electrically connected to the input/output interface of the second surface 12 by opening the vias 17 at the periphery of the dielectric layer 13.
In some embodiments, the conductive layer 14 may be made of a metal material with better conductivity, such as gold, silver, copper, aluminum and/or alloy, or a composite polymer material, such as conductive plastic, conductive rubber, conductive fiber and/or conductive paint.
Specifically, the shape and size of the conductive layer 14 may be set according to actual needs.
Referring to fig. 6 and 9-11, in some embodiments, the conductive layer 14 includes a first ground layer 143, and a first electrode layer 142 and a second electrode layer 144 located at two adjacent sides of the first ground layer 143, and the first ground layer 143, the first electrode layer 142, and the second electrode layer 144 cooperate to form the filter circuit 15.
The first ground layer 143 may include a first ground electrode 1431, the first electrode layer 143 may include a first electrode 1421, and the second electrode layer 144 may include a second electrode 1441. The first ground electrode 1431, the first electrode 1421, and the second electrode 1441 may have a plate shape, so that when the first ground electrode 1431, the first electrode 1421, and the second electrode 1441 are stacked, electrode plates that are disposed at intervals and are parallel to each other may be formed, and a capacitor may be formed to implement a filtering function, that is, to form the filter circuit 15.
In some embodiments, the rf module includes a low noise amplifier (not shown), the first electrode 1421 and the first ground electrode 1431 may form a first ground capacitor, and the first electrode 1421 is connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.
Therefore, the first ground capacitor can filter out part of stray or interference superposed on the enabling signal, and the stable operation of the low-noise amplifier is ensured.
In some embodiments, the second electrode 1441 and the first ground electrode 1431 may form a second capacitance to ground, and the second electrode layer 144 is connected to a power input of the low noise amplifier to filter a power signal of the low noise amplifier.
Therefore, the second ground capacitor can filter the interference of the power supply signal of the low-noise amplifier, and the normal work of the low-noise amplifier is ensured.
In some embodiments, the first ground electrode 1431 may be a plate, and the first ground electrode 1431 may be hollowed out to form the via 17.
Thus, the via 17 allows the interconnection conductive trace to pass through for electrical connection between the upper and lower layers. And the first ground layer 143 is hollowed out to remove the excess plate due to the overlarge plate coverage area, so that the upper and lower layers of media can be reliably combined.
In the illustrated embodiment, 3 conductive layers 14(L2-L4) within the substrate 10 cooperate to form a filter circuit 15. Of course, in other embodiments, 2 conductive layers or more than 3 conductive layers in the substrate 10 may cooperate together to form the filter circuit 15.
In some embodiments, the second electrode layer 144 includes a low noise amplifier rf output connection 1442, and the low noise amplifier rf output connection 1442 connects to the input-output connection layer 148. Further, the input-output connection layer 148147 includes a plurality of input-output connection points 1481, and a plurality of low noise amplifier radio frequency output lines 1442 may be connected to the respective input-output connection points 1481 through vias 17.
In some embodiments, the device connection layer 141 includes a plurality of device connection points 1411, and the low noise amplifier is electrically connected to the filter circuit 15 through the plurality of device connection points 1411.
Specifically, the device connection point 1411 may be a pad through which the low noise amplifier may be soldered to the substrate 10, ensuring stable packaging of the low noise amplifier. The i/o connection point 1481 may be a package pin, through which the rf front-end module 100 may be soldered to an external circuit for electrical connection.
In some embodiments, the input/output connection point 1481 may be plated to form a metal plating of tin, nickel, or gold.
Thus, the solderability of the substrate can be increased, which is beneficial for the installation of the rf front end module 100.
In some embodiments, the rf front-end module 100 includes a surface acoustic wave filter (SAW) and/or a low noise amplifier matching device (not shown) mounted on the first surface 11, and the SAW filter and/or the low noise amplifier matching device is electrically connected to the substrate 10 through a connection point.
The low noise amplifier, the surface acoustic wave filter and/or the low noise amplifier can be soldered on the surface of the substrate 10 by using a bare chip or an already packaged chip, so as to form a module with complete functions.
Referring to fig. 12-20, in some embodiments, at least 2 of the conductive layers 145 forming the frequency divider 16 include an inductor trace 1452, and the inductor traces 1452 adjacent to each other in the corresponding position in the stacking direction are sequentially connected in a spiral shape to form an inductor.
Specifically, the inductor wire 1452 is mainly formed by a thin and long wire on the dielectric layer 13, the inductor wire 1452 may be disposed along a corresponding annular region, and the inductor wires 1452 in different conductive layers 145 may be disposed at different positions of the annular region, so that the inductor axial connection at the corresponding positions may be formed as a spiral in a three-dimensional space to form an inductor.
In some embodiments, the inductive trace 1452 that is adjacent in a corresponding position in the stacking direction can be an inductive trace 1452 that is formed on adjacent 2 dielectric layers 13. In other embodiments, the inductor traces 1452 corresponding to adjacent positions in the stacking direction may be separated by a plurality of dielectric layers 13, that is, the inductor traces 1452 corresponding to adjacent positions in the stacking direction may be formed on 2 non-adjacent dielectric layers 13.
In some embodiments, the inductive traces 1452 in the conductive layers 145 can be straight, curved, polygonal, or otherwise shaped in each conductive layer 145, and are not specifically configured here.
In some embodiments, the number of inductors is multiple, and the inductor traces 1452 forming different inductors are staggered in the stacking direction.
Therefore, the mutual influence among different inductors can be reduced, and the normal work of the inductors is ensured.
In some embodiments, at least 2 adjacent ones of the conductive layers 145 forming the frequency divider 16 include capacitive plates 1451, and corresponding ones of the capacitive plates 1451 in the adjacent 2 conductive layers 145 form a capacitor.
In this manner, the corresponding capacitive plates 1451 of the adjacent 2 conductive layers 145 in the stacked arrangement may form a capacitor to integrate the capacitance of the frequency divider 16 within the substrate 10.
Referring to fig. 19 and 20, in some embodiments, the conductive layer 145 forming the divider 16 includes a second ground layer 147 and a third electrode layer 146 adjacent to the second ground layer 147, the third electrode layer 146 includes a plurality of capacitor plates 1451, and the plurality of capacitor plates 1451 form a plurality of capacitors with the second ground layer 147.
Specifically, the second ground layer 147 includes a second ground electrode 1461, and capacitor plates 1451 on the third electrode layer 146 are formed on the dielectric layer 13 at intervals, and each capacitor plate 1451 is connected to the second ground electrode 1461 to form a plurality of ground capacitors. A plurality of grounded capacitors may be connected with corresponding inductors to cooperate to form frequency divider 16.
In some embodiments, the second ground plate 1471 may include a hollowed-out region 1472.
Wherein, fretwork area 1472 can correspond the inductance setting, so, be favorable to eliminating divider 16 to ground parasitic capacitance to reduce the loss to useful signal, simultaneously, because to ground parasitic effect can reduce the equivalent inductance value of the inside inductance of module, partially dig out under the inductance and form fretwork area 1472, be favorable to improving equivalent inductance value.
Similarly, the second ground layer 143 has an excessively large area covered by the plate, and the upper and lower media can be reliably bonded by providing the hollowed-out region 1472.
In some embodiments, first ground electrode 1431 is electrically connected to second ground electrode 1461.
As such, the first ground layer 143 and the second ground layer 147 may maintain the same potential.
In the illustrated embodiment, 9 conductive layers 14(L5-L13) within substrate 10 cooperate to form frequency divider 16. Of course, in other embodiments, 2-8 conductive layers or more than 9 conductive layers 14 in the substrate 10 may cooperate to form the frequency divider 16, and are not limited herein.
Referring to fig. 22, in some embodiments, divider 16 includes a first port 161, a second port 162, and a third port 163, a first path is formed between first port 161 and third port 163, and a second path is formed between second port 162 and third port 163.
As shown in fig. 4 and 5, the first port 161 and the second port 163 may be disposed at the input and output connection layer 148 of the substrate 10, and the third port 163 may be disposed at the device connection layer 141 of the substrate 10.
In some embodiments, the first path includes an LC parallel circuit 163 connecting the first port 161 and the third port 163, and a first LC series circuit 164 connecting the third port 163 and ground. Specifically, the capacitor C6 is grounded and the inductor L is connected in the first LC series circuit 1644Connecting the third port 163.
In some embodiments, the second path includes the first path, a first capacitance C1 and a second LC series circuit 165 connecting the first port 161 in series with ground, a third LC series circuit 166 connecting the second LC series circuit 165 in parallel with the second port 162, and a second capacitance C4 connecting the second port 162 with ground.
Specifically, the capacitor C2 is grounded and the inductor L is connected in the second LC series circuit 1652The capacitor C3 of the third LC series circuit 166 is connected with the first capacitor C1, and the inductor L of the third LC series circuit 1661The second port 162 is connected.
The radio frequency communication device 1000 of the embodiment of the present application includes an antenna 200, and the frequency divider 16 is connected to the antenna 200.
In the description herein, reference to the term "one embodiment," "some embodiments," or "an example" etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present application have been shown and described above, it is to be understood that the above embodiments are exemplary and not to be construed as limiting the present application, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.

Claims (11)

1. A radio frequency front end module, comprising:
the substrate comprises a plurality of dielectric layers which are arranged in a stacked mode and a plurality of conducting layers which are formed on the dielectric layers respectively;
the filter circuit is formed by matching at least 2 conductive layers in the substrate; and
a frequency divider formed by at least 2 of the conductive layers in the substrate.
2. The rf front-end module of claim 1, wherein the conductive layer comprises a first ground layer, and a first electrode layer and a second electrode layer located on two adjacent sides of the first ground layer, and the first ground layer, the first electrode layer, and the second electrode layer cooperate to form the filter circuit.
3. The RF front-end module of claim 2, wherein the RF module comprises a low noise amplifier, the first electrode layer and the first ground layer form a first ground capacitance, and the first electrode layer is connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.
4. The RF front-end module of claim 3, wherein the second electrode layer forms a second ground capacitance with the first ground layer, and the second electrode layer connects to a power input of the low noise amplifier to filter a power signal of the low noise amplifier.
5. The rf front-end module of claim 3, wherein the conductive layer comprises a connection layer on a surface of the substrate, the connection layer comprising a plurality of connection points, and the low noise amplifier is electrically connected to the filter circuit through the plurality of connection points.
6. The rf front-end module of claim 1, wherein at least 2 of the conductive layers forming the frequency divider include an inductor trace, and the inductor traces of the at least 2 adjacent conductive layers are sequentially connected to form an inductor.
7. The RF front-end module of claim 6, wherein the number of the inductors is plural, and the inductor traces forming different inductors are arranged in a staggered manner in a stacking direction.
8. The rf front-end module of claim 1, wherein at least 2 adjacent ones of the conductive layers forming the frequency divider comprise capacitive plates, and wherein the capacitive plates corresponding to locations of the 2 adjacent conductive layers form a capacitor.
9. The rf front-end module of claim 8, wherein the conductive layer forming the frequency divider comprises a second ground layer and a third electrode layer adjacent to the second ground layer, the third electrode layer comprising a plurality of capacitive plates forming a plurality of capacitors with the second ground layer.
10. A radio frequency communication device, comprising:
an antenna; and
the radio frequency front end module of any of claims 1-9, the frequency divider coupled to the antenna.
11. An electronic device comprising the radio frequency communication apparatus of claim 10.
CN202010479703.2A 2020-05-29 2020-05-29 Radio frequency front-end module, radio frequency communication device and electronic equipment Pending CN111564426A (en)

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CN202010479703.2A CN111564426A (en) 2020-05-29 2020-05-29 Radio frequency front-end module, radio frequency communication device and electronic equipment

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112104336A (en) * 2020-09-15 2020-12-18 上海鸿晔电子科技股份有限公司 Wide tuning electrically tunable filter
CN112953455A (en) * 2021-02-22 2021-06-11 安徽安努奇科技有限公司 Filter structure
CN113381715A (en) * 2021-06-21 2021-09-10 安徽安努奇科技有限公司 3D filter circuit and 3D filter
WO2023221319A1 (en) * 2022-05-19 2023-11-23 安徽安努奇科技有限公司 Frequency divider

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112104336A (en) * 2020-09-15 2020-12-18 上海鸿晔电子科技股份有限公司 Wide tuning electrically tunable filter
CN112104336B (en) * 2020-09-15 2021-11-23 上海鸿晔电子科技股份有限公司 Wide tuning electrically tunable filter
CN112953455A (en) * 2021-02-22 2021-06-11 安徽安努奇科技有限公司 Filter structure
CN112953455B (en) * 2021-02-22 2023-11-07 安徽安努奇科技有限公司 filter structure
CN113381715A (en) * 2021-06-21 2021-09-10 安徽安努奇科技有限公司 3D filter circuit and 3D filter
WO2023221319A1 (en) * 2022-05-19 2023-11-23 安徽安努奇科技有限公司 Frequency divider

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