CN117276372A - Solar cell and preparation method thereof - Google Patents

Solar cell and preparation method thereof Download PDF

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Publication number
CN117276372A
CN117276372A CN202311175162.4A CN202311175162A CN117276372A CN 117276372 A CN117276372 A CN 117276372A CN 202311175162 A CN202311175162 A CN 202311175162A CN 117276372 A CN117276372 A CN 117276372A
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China
Prior art keywords
layer
boron diffusion
solar cell
diffusion layer
electrode
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CN202311175162.4A
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Chinese (zh)
Inventor
许元飞
付少剑
张明明
郭世成
范洵
毛雨
彭高攀
吕佳丽
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Huai'an Jietai New Energy Technology Co ltd
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Huai'an Jietai New Energy Technology Co ltd
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Priority to CN202311175162.4A priority Critical patent/CN117276372A/en
Publication of CN117276372A publication Critical patent/CN117276372A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a solar cell and a preparation method thereof, wherein the solar cell comprises a P-type boron diffusion layer, a PN junction layer, an N-type silicon base layer, a tunneling layer and an electron collecting layer which are sequentially overlapped, wherein the N-type silicon base layer is provided with a first concave part, a region of the PN junction layer opposite to the first concave part is provided with a first convex part and a second concave part, the first convex part and the second concave part are positioned on two opposite sides of the PN junction layer, the first convex part is positioned in the first concave part, a region of the P-type boron diffusion layer opposite to the second concave part is provided with a second convex part and a third concave part, the second convex part and the third concave part are positioned on two opposite sides of the P-type boron diffusion layer, and the second convex part is positioned in the second concave part; the side where the P-type boron diffusion layer is located is the light-facing side. The scheme can solve the problem that the power generation capacity of the solar cell in the related technology is low.

Description

Solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof.
Background
Solar cells are devices that directly convert light energy into electrical energy through a photoelectric effect or a photochemical effect. In the related art, the lighting surface of the solar cell is in a planar structure, and the grid line (electrode structure) is arranged on the lighting surface, so that the lighting surface of the solar cell is limited in area, and the arrangement of the grid line can further shield part of the lighting surface of the solar cell, so that the power generation capacity of the solar cell in the related art is lower, and the problem that the power generation capacity of the solar cell is higher and higher by a user cannot be met is solved.
Disclosure of Invention
The invention discloses a solar cell and a preparation method thereof, which are used for solving the problem of lower power generation capacity of the solar cell in the related technology.
In order to solve the technical problems, the invention is realized as follows:
in a first aspect, the present application discloses a solar cell comprising a P-type boron diffusion layer, a PN junction layer, an N-type silicon base layer, a tunneling layer, and an electron concentrating layer, which are sequentially stacked, wherein,
the N-type silicon substrate is provided with a first concave part, a first convex part and a second concave part are arranged in the area, opposite to the first concave part, of the PN junction layer, the first convex part and the second concave part are positioned on two opposite sides of the PN junction layer, the first convex part is positioned in the first concave part, a second convex part and a third concave part are arranged in the area, opposite to the second concave part, of the P-type boron diffusion layer, the second convex part and the third concave part are positioned on two opposite sides of the P-type boron diffusion layer, and the second convex part is positioned in the second concave part;
the side where the P-type boron diffusion layer is located is a light incident side, and the tunneling layer is used for only allowing electrons to pass through.
In a second aspect, the present application further discloses a method for preparing a solar cell, where the solar cell is the solar cell in the first aspect, and the method includes:
a groove is formed in the silicon main body;
carrying out a boron diffusion process on one side of the silicon main body, on which the groove is formed, so that a P-type boron diffusion layer, a PN junction layer and an N-type silicon base layer are sequentially stacked on the silicon main body, wherein the N-type silicon base layer forms a first concave part at a position corresponding to the groove, the PN junction layer forms a first convex part and a second concave part at a position corresponding to the groove, and the P-type boron diffusion layer forms a second convex part and a third concave part at a position corresponding to the groove;
a tunneling layer is arranged on one side of the N-type silicon base layer, which is far away from the PN junction layer;
and an electron collecting layer is arranged on one side of the tunneling layer, which is away from the N-type silicon base layer.
The technical scheme adopted by the invention can achieve the following technical effects:
according to the solar cell disclosed by the embodiment of the application, the N-type silicon substrate is provided with the first concave part, the area of the PN junction layer opposite to the first concave part is provided with the first convex part and the second concave part, the first convex part and the second concave part are positioned on two opposite sides of the PN junction layer, the first convex part is positioned in the first concave part, the area of the P-type boron diffusion layer opposite to the second concave part is provided with the second convex part and the third concave part, the second convex part and the third concave part are positioned on two opposite sides of the P-type boron diffusion layer, and the second convex part is positioned in the second concave part, so that the area of the solar cell for receiving light can be increased relative to the solar cell in the related art at the position of the third concave part by adopting a plane structure, and the power generation capacity of the solar cell can be improved.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 2 is a flowchart of a solar cell manufacturing process according to an embodiment of the present invention.
Reference numerals illustrate:
110-a first electrode, 120-a second electrode,
130-P type boron diffusion layer, 131-second convex part, 132-third concave part,
140-PN junction layer, 141-first convex portion, 142-second concave portion,
150-N-type silicon base layer, 151-first concave part,
160-tunneling layer, 170-electron collecting layer, 180-passivation layer, 190-first anti-reflection layer, 210-second anti-reflection layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
Referring to fig. 1 to 2, an embodiment of the present invention discloses a solar cell, which includes a P-type boron diffusion layer 130, a PN junction layer 140, an N-type silicon base layer 150, a tunneling layer 160, and an electron collecting layer 170, which are sequentially stacked.
The P-type boron diffusion layer 130, the PN junction layer 140, and the N-type silicon base layer 150 may be formed by performing a boron diffusion process on the silicon body so that the silicon body forms an integrated structure of the P-type boron diffusion layer 130, the PN junction layer 140, and the N-type silicon base layer 150 stacked in order. It should be noted that, the N-type silicon substrate 150 is a phosphorus-containing layer, and the P-type boron diffusion layer 130 is unstable when illuminated by light, so that electrons can pass through the PN junction layer 140 and the N-type silicon substrate 150, and then pass through the tunneling layer 160 to reach the electron collecting layer 170, wherein only electrons pass through the tunneling layer 160, and holes losing electrons cannot pass through the tunneling layer 160. The tunneling layer 160 may be a SiO2 layer, and the principle of the tunneling layer 160 is a tunneling silicon oxide passivation contact technology, where only electrons can pass through and holes cannot pass through. The electron collecting layer 170 may be an N-type silicon layer formed by forming a polysilicon layer (Poly silicon layer) by Low Pressure Chemical Vapor Deposition (LPCVD) and then performing phosphorus diffusion.
The N-type silicon substrate 150 has a first recess 151.
The PN junction layer 140 has a first protrusion 141 and a second recess 142 in regions opposite to the first recess 151, the first protrusion 141 and the second recess 142 being located at opposite sides of the PN junction layer 140, the first protrusion 141 being located in the first recess 151.
The region of the P-type boron diffusion layer 130 opposite to the second recess 142 has a second protrusion 131 and a third recess 132, the second protrusion 131 and the third recess 132 are located at opposite sides of the P-type boron diffusion layer 130, and the second protrusion 131 is located in the second recess 142.
The P-type boron diffusion layer 130 is located on a light incident side, light is projected from the P-type boron diffusion layer 130 to the solar cell, and the tunneling layer 160 is used for only passing through electrons.
In the solar cell disclosed in this embodiment, the N-type silicon substrate 150 is provided with the first concave portion 151, the area of the PN junction layer 140 opposite to the first concave portion 151 is provided with the first convex portion 141 and the second concave portion 142, the first convex portion 141 and the second concave portion 142 are located at two opposite sides of the PN junction layer 140, the first convex portion 141 is located in the first concave portion 151, the area of the P-type boron diffusion layer 130 opposite to the second concave portion 142 is provided with the second convex portion 131 and the third concave portion 132, the second convex portion 131 and the third concave portion 132 are located at two opposite sides of the P-type boron diffusion layer 130, and the second convex portion 131 is located in the second concave portion 142, so that the area of the solar cell receiving light can be increased at the position of the third concave portion 132 relative to the solar cell in the related art by adopting a planar structure, and thus the power generation capability of the solar cell can be improved.
In order to further enhance the power generation capability of the solar cell, the N-type silicon substrate 150 may optionally have a plurality of first concave portions 151, the pn junction layer 140 may have a plurality of first convex portions 141 and a plurality of second concave portions 142, and the p-type boron diffusion layer 130 may have a plurality of second convex portions 131 and a plurality of third concave portions 132. The plurality of first concave portions 151, the plurality of first convex portions 141, the plurality of second concave portions 142, the plurality of second convex portions 131, and the plurality of third concave portions 132 may be disposed in one-to-one correspondence.
The solar cell disclosed in the embodiment of the application is provided with the first concave portion 151, the first convex portion 141, the second concave portion 142, the second convex portion 131 and the third concave portion 132, which are all provided in a plurality of one-to-one correspondence, so that the power generation capability of the solar cell can be further improved.
In an alternative embodiment, the solar cell further includes a first electrode 110 and a second electrode 120, at least a portion of the third recess 132 is provided with the first electrode 110, and the first electrode 110 is electrically connected to the P-type boron diffusion layer 130, and the second electrode 120 is electrically connected to the electron collecting layer 170.
The solar cell disclosed in the embodiment of the present application can protect the first electrode 110 by disposing the first electrode 110 in the third recess 132, and the first electrode 110 is located in the third recess 132 and electrically connected to the P-type boron diffusion layer 130, so that the contact area between the first electrode 110 and the P-type boron diffusion layer 130 is increased, thereby facilitating the stability of the electrical connection of the first electrode 110.
In order to further improve the power generation capability of the solar cell, the surface of the P-type boron diffusion layer 130 on the side facing away from the PN junction layer 140 may optionally have a plurality of anti-reflection protrusions disposed at intervals.
Specifically, the anti-reflection convex portion may be a structure similar to a triangle formed by performing a texturing process on a surface of the P-type boron diffusion layer 130 on a side away from the PN junction layer 140, and the anti-reflection convex portion of the P-type boron diffusion layer 130 on a side away from the PN junction layer 140 forms a textured structure layer, where reflection of light can be reduced by the textured structure layer.
According to the solar cell disclosed by the embodiment of the application, the surface of one side, away from the PN junction layer 140, of the P-type boron diffusion layer 130 is provided with the anti-reflection convex parts at a plurality of intervals, so that a rough structure is formed on the surface of one side, away from the PN junction layer 140, of the P-type boron diffusion layer 130, reflection of light rays by the P-type boron diffusion layer 130 can be reduced, and the power generation capacity of the solar cell can be improved.
In order to reduce the problem of the recombination of electrons and holes of the solar cell at the surface of the P-type boron diffusion layer 130, which affects the power generation capability of the solar cell, the solar cell may optionally further include a passivation layer 180, and the passivation layer 180 may be an aluminum oxide layer. The passivation layer 180 may be disposed on a side of the P-type boron diffusion layer 130 facing away from the PN junction layer 140, and a side of the passivation layer 180 facing the P-type boron diffusion layer 130 may have a plurality of anti-reflection recesses disposed at intervals, and a plurality of anti-reflection protrusions are correspondingly disposed in the plurality of anti-reflection recesses.
According to the solar cell disclosed by the embodiment of the application, the passivation layer 180 is arranged on one side, deviating from the PN junction layer 140, of the P-type boron diffusion layer 130, so that the recombination of electrons and holes of the solar cell on the surface of the P-type boron diffusion layer 130 can be reduced, and the influence on the power generation capacity of the solar cell can be relieved. In addition, a plurality of anti-reflection concave parts are arranged at intervals on one side of the passivation layer 180 facing the P-type boron diffusion layer 130, so that a plurality of anti-reflection convex parts are correspondingly arranged in the anti-reflection concave parts, reflection of light can be further reduced, and the passivation layer 180 and the P-type boron diffusion layer 130 are more stable in matching connection through the anti-reflection concave parts and the anti-reflection convex parts.
In order to further reduce the light reflection capability of the solar cell, the solar cell may optionally further include a first anti-reflection layer 190, and the first anti-reflection layer 190 may be disposed on a side of the P-type boron diffusion layer 130 facing away from the PN junction layer 140. Specifically, the first anti-reflection layer 190 may be a silicon nitride layer.
The solar cell disclosed in the embodiment of the application sets up the first anti-reflection layer 190 on one side of the P-type boron diffusion layer 130 deviating from the PN junction layer 140, so that the reflection capability of the solar cell to light can be further reduced, the power generation capability of the solar cell is improved, and each layer covered by the first anti-reflection layer 190 can be further protected.
In some cases, the side of the solar cell facing away from the light-facing side may also be used for generating electricity, and in order to reduce light reflection from the side of the solar cell facing away from the light-facing side, the solar cell may optionally further include a second anti-reflection layer 210, where the second anti-reflection layer 210 may be disposed on the side of the electron collection layer 170 facing away from the tunneling layer 160. The second anti-reflection layer 210 may be a silicon nitride layer.
The solar cell disclosed in the embodiment of the application sets the second anti-reflection layer 210 on one side, deviating from the tunneling layer 160, of the electron collecting layer 170, so that light reflection on one side, deviating from the windward side, of the solar cell can be reduced, power generation capacity of the solar cell can be improved, and each layer covered by the second anti-reflection layer 210 can be protected.
It should be noted that, in preparing the first anti-reflection layer 190 and the second anti-reflection layer 210, the solar cell may be prepared by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process.
The application also discloses a preparation method of the solar cell, wherein the disclosed solar cell is disclosed in the embodiment, and the preparation method comprises the following steps:
s101, forming a groove on the silicon main body.
The grooves may be formed in the silicon body by laser, but may be formed by chemical etching, laser, or the like.
S102, performing a boron diffusion process on the side of the silicon body provided with the groove, so that the silicon body forms a P-type boron diffusion layer 130, a PN junction layer 140 and an N-type silicon substrate 150 which are sequentially stacked.
Wherein, the N-type silicon base layer 150 forms a first concave portion 151 at a position corresponding to the groove, the pn junction layer 140 forms a first convex portion 141 and a second concave portion 142 at a position corresponding to the groove, and the p-type boron diffusion layer 130 forms a second convex portion 131 and a third concave portion 132 at a position corresponding to the groove.
It should be noted that, after the boron diffusion process is performed on the side of the silicon body with the groove, the P-type boron diffusion layer 130 is formed, and the other portion of the silicon body automatically forms the PN junction layer 140 and the N-type silicon substrate 150.
S103, a tunneling layer 160 is disposed on a side of the N-type silicon substrate 150 facing away from the PN junction layer 140.
Specifically, the tunneling layer 160 may be formed by means of Low Pressure Chemical Vapor Deposition (LPCVD). The tunneling layer 160 may be a SiO2 layer, and the principle of the tunneling layer 160 is a tunneling silicon oxide passivation contact technology, where only electrons can pass through and holes cannot pass through.
S104, an electron collecting layer 170 is disposed on a side of the tunneling layer 160 facing away from the N-type silicon substrate 150.
Specifically, the electron collecting layer 170 may be formed by Low Pressure Chemical Vapor Deposition (LPCVD) to form a polysilicon layer (Poly silicon layer), and then phosphorus-diffused to form an N-type silicon layer.
According to the preparation method of the solar cell disclosed by the embodiment of the invention, the groove is formed in the silicon main body, and the boron diffusion process is performed on the side, provided with the groove, of the silicon main body, so that the P-type boron diffusion layer 130, the PN junction layer 140 and the N-type silicon layer 150 are sequentially stacked, the N-type silicon layer 150 is provided with the first concave portion 151 at the position corresponding to the groove, the PN junction layer 140 is provided with the first convex portion 141 and the second concave portion 142 at the position corresponding to the groove, the P-type boron diffusion layer 130 is provided with the second convex portion 131 and the third concave portion 132 at the position corresponding to the groove, the first convex portion 141 is positioned in the first concave portion 151, and the second convex portion 131 is positioned in the second concave portion 142, so that the area of the solar cell for receiving light rays can be increased at the position of the third concave portion 132 relative to the solar cell in the related art, and the power generation capacity of the solar cell can be improved.
Optionally, the solar cell further includes a first electrode 110 and a second electrode 120, at least a portion of the third recess 132 is provided with the first electrode 110, and the first electrode 110 is electrically connected to the P-type boron diffusion layer 130, and the second electrode 120 is electrically connected to the electron collecting layer 170.
The disclosed preparation method also comprises
S105, a first electrode 110 is disposed in at least a portion of the third recess 132, and the first electrode 110 is electrically connected to the P-type boron diffusion layer 130.
S106, the second electrode 120 is electrically connected to the electron collecting layer 170.
According to the manufacturing method of the solar cell disclosed by the embodiment of the application, the first electrode 110 is arranged in the third concave part 132, so that the first electrode 110 can be protected, and the first electrode 110 is positioned in the third concave part 132 and electrically connected with the P-type boron diffusion layer 130, so that the contact area between the first electrode 110 and the P-type boron diffusion layer 130 is increased, and the stability of the electrical connection of the first electrode 110 is facilitated.
In one implementation, before the first electrode 110 is disposed in at least a portion of the third recess 132 and the first electrode 110 is electrically connected to the P-type boron diffusion layer 130, the disclosed fabrication method may further include:
step a, performing a laser process on the bottom of the third recess 132 provided with the first electrode 110, so that the concentration of boron atoms of the P-type boron diffusion layer 130 in the bottom region of the third recess 132 provided with the first electrode 110 is greater than the concentration of boron atoms of the bottom region of the P-type boron diffusion layer 130 away from the third recess 132.
When the bottom of the third recess 132 is subjected to the laser process, the temperature of the bottom of the third recess 132 is increased, so that boron atoms can be collected, and the concentration of the boron atoms can be increased.
According to the manufacturing method of the solar cell disclosed by the embodiment of the invention, the laser process is performed on the bottom of the third concave part 132 provided with the first electrode 110, so that the concentration of boron atoms of the P-type boron diffusion layer 130 positioned in the bottom area of the third concave part 132 provided with the first electrode 110 is greater than that of boron atoms of the bottom area of the P-type boron diffusion layer 130 far away from the third concave part 132, and therefore the power generation capability of the solar cell can be improved.
Optionally, before performing the boron diffusion process on the grooved side of the silicon body, the disclosed preparation method may further include:
and step B, forming a plurality of anti-reflection convex parts which are arranged at intervals on the surface of the side, away from the PN junction layer 140, of the P-type boron diffusion layer 130 through a texturing process.
According to the preparation method of the solar cell, the surface of the side, away from the PN junction layer 140, of the P-type boron diffusion layer 130 is provided with the plurality of anti-reflection convex parts which are arranged at intervals, so that a rough structure is formed on the surface of the side, away from the PN junction layer 140, of the P-type boron diffusion layer 130, reflection of light rays by the P-type boron diffusion layer 130 can be reduced, and power generation capacity of the solar cell can be improved.
In order to reduce the problem that the electron and the hole of the solar cell are combined on the surface of the P-type boron diffusion layer 130 to affect the power generation capability of the solar cell, the disclosed preparation method may further include:
in step C, a passivation layer 180 is disposed on the side of the P-type boron diffusion layer 130 facing away from the PN junction layer 140.
Wherein the passivation layer 180 covers the anti-reflection convex portions and fills gaps between the plurality of anti-reflection convex portions, and regions of the passivation layer 180 corresponding to the plurality of anti-reflection convex portions form anti-reflection concave portions. The passivation layer 180 may be an aluminum oxide layer.
According to the preparation method of the solar cell, the passivation layer 180 is arranged on one side, away from the PN junction layer 140, of the P-type boron diffusion layer 130, so that the recombination of electrons and holes of the solar cell on the surface of the P-type boron diffusion layer 130 can be reduced, and the influence on the power generation capacity of the solar cell can be relieved.
Optionally, the preparation method of the solar cell disclosed in the application may further include:
in step D, a first anti-reflection layer 190 is disposed on a side of the P-type boron diffusion layer 130 facing away from the PN junction layer 140.
Wherein the first anti-reflection layer 190 may be a silicon nitride layer.
According to the preparation method of the solar cell disclosed by the embodiment of the application, the first anti-reflection layer 190 is arranged on one side, deviating from the PN junction layer 140, of the P-type boron diffusion layer 130, so that the light reflection capability of the solar cell can be further reduced, the power generation capability of the solar cell is improved, and each layer covered by the first anti-reflection layer 190 can be further protected.
Optionally, the preparation method of the solar cell disclosed in the application may further include:
in step E, a second anti-reflection layer 210 is disposed on a side of the electron collecting layer 170 facing away from the tunneling layer 160.
Wherein the second anti-reflection layer 210 may be a silicon nitride layer.
According to the preparation method of the solar cell disclosed by the embodiment of the application, the second anti-reflection layer 210 is arranged on one side, deviating from the tunneling layer 160, of the electron collecting layer 170, so that light reflection on one side, deviating from the windward side, of the solar cell can be reduced, the power generation capacity of the solar cell can be improved, and the second anti-reflection layer 210 can also protect all layers covered by the solar cell.
It should be noted that, in preparing the first anti-reflection layer 190 and the second anti-reflection layer 210, the solar cell may be prepared by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.

Claims (10)

1. A solar cell is characterized by comprising a P-type boron diffusion layer (130), a PN junction layer (140), an N-type silicon base layer (150), a tunneling layer (160) and an electron collecting layer (170) which are sequentially stacked, wherein,
the N-type silicon substrate (150) is provided with a first concave part (151), a region of the PN junction layer (140) opposite to the first concave part (151) is provided with a first convex part (141) and a second concave part (142), the first convex part (141) and the second concave part (142) are positioned on two opposite sides of the PN junction layer (140), the first convex part (141) is positioned in the first concave part (151), a region of the P-type boron diffusion layer (130) opposite to the second concave part (142) is provided with a second convex part (131) and a third concave part (132), the second convex part (131) and the third concave part (132) are positioned on two opposite sides of the P-type boron diffusion layer (130), and the second convex part (131) is positioned in the second concave part (142);
the side of the P-type boron diffusion layer (130) is a light incident side, and the tunneling layer (160) is used for only passing through electrons.
2. The solar cell according to claim 1, wherein the N-type silicon-based layer (150) has a plurality of the first concave portions (151), the PN junction layer (140) has a plurality of the first convex portions (141) and a plurality of the second concave portions (142), the P-type boron diffusion layer (130) has a plurality of the second convex portions (131) and a plurality of the third concave portions (132), and a plurality of the first concave portions (151), a plurality of the first convex portions (141), a plurality of the second concave portions (142), a plurality of the second convex portions (131), and a plurality of the third concave portions (132) are disposed in one-to-one correspondence.
3. The solar cell according to claim 2, further comprising a first electrode (110) and a second electrode (120), wherein the first electrode (110) is disposed at least partially within the third recess (132), and wherein the first electrode (110) is electrically connected to the P-type boron diffusion layer (130), and wherein the second electrode (120) is electrically connected to the electron concentrating layer (170).
4. The solar cell according to claim 1, wherein a surface of the P-type boron diffusion layer (130) facing away from a side where the PN junction layer (140) is located has a plurality of anti-reflection protrusions arranged at intervals.
5. The solar cell according to claim 4, further comprising a passivation layer (180), wherein the passivation layer (180) is disposed on a side of the P-type boron diffusion layer (130) facing away from the PN junction layer (140), and wherein a side of the passivation layer (180) facing the P-type boron diffusion layer (130) has a plurality of anti-reflection recesses disposed at intervals, and a plurality of the anti-reflection protrusions are disposed in the plurality of anti-reflection recesses, respectively.
6. The solar cell according to claim 4, further comprising a first anti-reflection layer (190), the first anti-reflection layer (190) being provided on a side of the P-type boron diffusion layer (130) facing away from the PN junction layer (140).
7. A method of manufacturing a solar cell, characterized in that the solar cell is the solar cell according to any one of claims 1 to 6, the method comprising:
a groove is formed in the silicon main body;
carrying out a boron diffusion process on one side of the silicon main body, on which the groove is formed, so that a P-type boron diffusion layer (130), a PN junction layer (140) and an N-type silicon base layer (150) are sequentially stacked on the silicon main body, wherein the N-type silicon base layer (150) forms a first concave part (151) at a position corresponding to the groove, the PN junction layer (140) forms a first convex part (141) and a second concave part (142) at a position corresponding to the groove, and the P-type boron diffusion layer (130) forms a second convex part (131) and a third concave part (132) at a position corresponding to the groove;
a tunneling layer (160) is arranged on one side of the N-type silicon base layer (150) which is far away from the PN junction layer (140);
an electron collecting layer (170) is arranged on one side of the tunneling layer (160) away from the N-type silicon-based layer (150).
8. The method of manufacturing according to claim 7, wherein the solar cell further comprises a first electrode (110) and a second electrode (120), the N-type silicon-based layer (150) has a plurality of the first concave portions (151), the PN junction layer (140) has a plurality of the first convex portions (141) and a plurality of the second concave portions (142), the P-type boron diffusion layer (130) has a plurality of the second convex portions (131) and a plurality of the third concave portions (132), and a plurality of the first concave portions (151), a plurality of the first convex portions (141), a plurality of the second concave portions (142), a plurality of the second convex portions (131), and a plurality of the third concave portions (132) are arranged in one-to-one correspondence;
the preparation method further comprises the following steps:
-providing the first electrode (110) in at least part of the third recess (132), and the first electrode (110) is electrically connected to the P-type boron diffusion layer (130);
the second electrode (120) is electrically connected to the electron collecting layer (170).
9. The method of manufacturing of claim 8, wherein the first electrode (110) is disposed within at least a portion of the third recess (132), and the method of manufacturing further comprises, prior to electrically connecting the first electrode (110) to the P-type boron diffusion layer (130):
performing a laser process on the bottom of the third recess (132) provided with the first electrode (110) so that the concentration of boron atoms of the P-type boron diffusion layer (130) located in the bottom region of the third recess (132) provided with the first electrode (110) is greater than the concentration of boron atoms of the P-type boron diffusion layer (130) located away from the bottom region of the third recess (132).
10. The manufacturing method according to claim 7, characterized in that before performing a boron diffusion process on a side of the silicon body where the groove is formed, the manufacturing method further comprises:
and forming a plurality of anti-reflection convex parts which are arranged at intervals on the surface of one side of the P-type boron diffusion layer (130) away from the PN junction layer (140) through a texturing process.
CN202311175162.4A 2023-09-12 2023-09-12 Solar cell and preparation method thereof Pending CN117276372A (en)

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Application Number Priority Date Filing Date Title
CN202311175162.4A CN117276372A (en) 2023-09-12 2023-09-12 Solar cell and preparation method thereof

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CN117276372A true CN117276372A (en) 2023-12-22

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