CN117253773A - Heating preparation system for semiconductor manufacturing - Google Patents
Heating preparation system for semiconductor manufacturing Download PDFInfo
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- CN117253773A CN117253773A CN202311494817.4A CN202311494817A CN117253773A CN 117253773 A CN117253773 A CN 117253773A CN 202311494817 A CN202311494817 A CN 202311494817A CN 117253773 A CN117253773 A CN 117253773A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 238000010438 heat treatment Methods 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- 238000012546 transfer Methods 0.000 claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000003756 stirring Methods 0.000 claims description 20
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 238000007599 discharging Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 19
- 229910002601 GaN Inorganic materials 0.000 abstract description 18
- 239000002994 raw material Substances 0.000 abstract description 5
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000006227 byproduct Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 31
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 30
- 238000009826 distribution Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000002035 prolonged effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the semiconductor manufacturing technology, and discloses a heating preparation system for semiconductor manufacturing, which comprises a semiconductor preparation machine body and a semiconductor manufacturing cavity positioned in the semiconductor preparation machine body, wherein a semiconductor manufacturing unit is arranged in the semiconductor manufacturing cavity; the semiconductor manufacturing unit comprises a semiconductor manufacturing supporting table with a cavity formed inside, a semiconductor supporting carrier plate used for placing a semiconductor crystal plate is embedded in the middle of the top of the semiconductor manufacturing supporting table, the inside of the cavity is divided into a first cavity and a second cavity from top to bottom through a baffle plate, a spiral channel is arranged in the first cavity, a plurality of heat transfer components are further arranged in the channel, the bottom ends of the plurality of heat transfer components penetrate into the second cavity, a heating medium is stored in the second cavity, a heating body is further arranged in the second cavity, and a discharge unit is further arranged above the semiconductor manufacturing supporting table; the generation of gallium nitride is quickened, the generation of byproducts is reduced, the waste of raw material gas is avoided, and the preparation efficiency of gallium nitride is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a heating preparation system for semiconductor manufacturing.
Background
A semiconductor refers to a material having conductivity between that of a conductor and an insulator at normal temperature. The method has application in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, illumination, high-power conversion and the like, and along with the rapid development of information technology, the semiconductor industry has become an important strategic industry. In recent years, gallium nitride semiconductor materials have become a research hot spot, and gallium nitride is a typical representative of third generation semiconductor materials, and currently the mainstream production method is to prepare gallium nitride by Hydride Vapor Phase Epitaxy (HVPE), and the preparation method has the advantages of fast growth speed, low cost, good quality of grown gallium nitride (GaN), and the like, and is considered as the most promising method for preparing self-supporting gallium nitride at present.
When gallium nitride is prepared by an HVPE method, semiconductor growth gas (mixed gas of gallium chloride, ammonia gas and the like) is usually required to be introduced into a semiconductor substrate plate, but in the prior art, the gas is usually introduced into the semiconductor substrate plate on a semiconductor preparation support table by an axial flow method, and the ventilation method can lead to a shorter flow path of the semiconductor growth gas, so that the mixed gas and the semiconductor substrate plate are insufficiently mixed and react, the generation of gallium nitride is slowed down, and part of raw material gas is wasted, thereby influencing the semiconductor preparation efficiency; meanwhile, when gas is introduced, a heating system is needed to heat the semiconductor substrate plate so as to enable the semiconductor substrate plate to fully react with semiconductor growth gas (mixed gas such as gallium chloride and ammonia gas) to generate gallium nitride, and most of the current preparation systems adopt heating components and devices to be fixedly arranged at the bottom of a semiconductor preparation table so as to directly heat the semiconductor crystal plate at the upper part of the semiconductor preparation table.
Disclosure of Invention
The present invention is directed to a thermal fabrication system for semiconductor fabrication that solves the above-mentioned problems of the prior art.
The invention is realized by the following technical scheme:
a heating preparation system for semiconductor manufacture comprises a semiconductor preparation machine body and a semiconductor manufacture cavity positioned in the semiconductor preparation machine body, wherein a semiconductor manufacture unit is arranged in the semiconductor manufacture cavity;
the semiconductor manufacturing unit comprises a semiconductor manufacturing supporting table with a cavity formed inside, a semiconductor supporting carrier plate used for placing a semiconductor crystal plate is embedded in the middle of the top of the semiconductor manufacturing supporting table, the inside of the cavity is divided into a first cavity and a second cavity from top to bottom through a baffle plate, a spiral channel is arranged in the first cavity, a plurality of heat transfer assemblies are further arranged in the channel, the bottoms of the heat transfer assemblies penetrate into the second cavity, a heating medium is stored in the second cavity, a heating body is further arranged in the second cavity, and a discharging unit is further arranged above the semiconductor manufacturing supporting table.
It should be noted that, according to the technical scheme, the channel is arranged in the first cavity, so that gallium chloride gas and ammonia gas can flow along the channel when entering the first cavity, and the flow path of the gallium chloride gas and the ammonia gas is increased and the mixing reaction time is prolonged due to the fact that the gallium chloride gas and the ammonia gas are led to be spiral, so that the gallium chloride gas and the ammonia gas are ensured to be mixed and fully reacted with the semiconductor substrate plate, the generation of gallium nitride is accelerated, the generation of byproducts is reduced, the waste of raw material gas is avoided, and the preparation efficiency of gallium nitride is improved; meanwhile, it should be noted that, this technical scheme still sets up the heat transfer subassembly in first cavity, and the heat transfer subassembly bottom runs through to the second cavity in, and be equipped with the heating member in the second cavity, and hold heating medium, when the heating member heats heating medium with this, the heat in the second cavity can pass through the heat transfer subassembly and transmit to the passageway fast, when this makes gallium chloride gas and ammonia pass through the passageway, carry out rapid heating to gas, flow and the heat transfer subassembly of high temperature gas in the passageway simultaneously, can also evenly be heated to semiconductor support carrier plate, so that the heat distribution of the semiconductor crystal plate of placing on the semiconductor support carrier plate is more even, avoid heat concentration and influence semiconductor formation quality.
Further, the heating body comprises a stirring disc which is rotatably arranged, a plurality of V-shaped notches are formed in the outer circumferential surface of the stirring disc in an annular array shape, and a heating element is arranged in any V-shaped notch. Based on the structure, when the heating body heats the heating medium in the second cavity, the heating medium can perform billowing flow in the second cavity, so that the heating medium is heated rapidly and fully.
Preferably, the plurality of heat transfer components are distributed in the channel in a staggered way, any heat transfer component comprises an outer sleeve with vacuum inside, a heat dissipation end positioned at the top end of the outer sleeve, a heating end positioned at the bottom end of the outer sleeve, and a heat insulation sleeve arranged at the middle position outside the outer sleeve body, wherein the inner wall of the outer sleeve is provided with a tube core structure along the axial direction of the outer sleeve, the heating end is positioned in a heating medium in a semiconductor manufacturing cavity, the whole body of the outer sleeve is hemispherical, heat conduction fluid is stored in the heating end, and the heat dissipation end is positioned in the channel and has a cross section similar to a spindle shape. Based on the structure, when gallium chloride gas and ammonia gas flow in the channel, the radiating end can conduct guiding drainage on the gallium chloride gas and the ammonia gas, so that the gallium chloride gas and the ammonia gas are fully mixed, the flowing time of the gas in the channel is prolonged, and meanwhile, the contact area between the radiating end and the gas is increased, so that the gas is fully heated.
Preferably, the bottom of the semiconductor manufacturing support table is further provided with a power device through a heat insulation plate, the power device is used for driving the stirring disc to rotate, a support structure is further arranged between the power device and the semiconductor manufacturing support table, and the power device is supported and fixed through the support structure and is restrained from vibrating, so that the influence on the semiconductor manufacturing support table is avoided. Based on the structure, the power device is helped to provide power for the rotation of the stirring disc, the heating medium is uniformly heated through the heating element after the stirring disc rotates, and meanwhile, the vibration generated by the power device in the working process can be effectively prevented from being transmitted to the semiconductor manufacturing supporting table through the supporting structure, so that the semiconductor preparation is influenced.
Specifically, bearing structure is including being located the annular fixing base of semiconductor manufacturing brace table bottom, and fixed cover establishes the outside annular mount pad of power device to and be located a plurality of buffering groups between annular fixing base and the annular mount pad, and a plurality of buffering group array sets up, wherein, arbitrary the buffering group includes two hydraulic stay bars, two hydraulic stay bar's top and bottom are articulated mutually with annular fixing base and annular mount pad respectively, and the bottom of two hydraulic stay bars is close to each other, and its top is kept away from each other, forms approximately V type structure.
More specifically, the discharge unit comprises a pipeline which is positioned right above the semiconductor support carrier plate and is annular, the bottom of the pipeline is communicated with a channel in the first cavity through a communicating pipe, and a plurality of output assemblies are arranged on an inner annular surface array of the pipeline. The output assembly is favorable for converging and spraying the mixed gas onto the semiconductor support carrier plate, so that the mixed gas fully reacts with the semiconductor substrate plate, and the gallium nitride crystal growth and formation are facilitated.
More preferably, any one of the output assemblies comprises a discharge pipe with one end in ball joint with the output end, the discharge pipe is communicated with the pipeline through a hose, the other end of the discharge pipe is provided with an output flat port, and a barrier strip is arranged in the output flat port. Based on the structure, when the discharge pipe is used for discharging semiconductor growth gas, the gas can generate recoil force to the discharge pipe, so that after the discharge pipe receives the recoil force, the discharge pipe swings in a disordered manner up, down, left and right on the pipeline, and the discharge pipe forms multiple paths of air flows with different directions to fully contact and react with the semiconductor substrate plate when discharging the gas.
Further specifically, a first input pipe and a second input pipe are respectively arranged on two sides of the semiconductor preparation machine body, and one ends of the first input pipe and the second input pipe extend into the baffle plate and are communicated with the channel through the mixing pipe. Based on the above structure, the user can charge gallium chloride gas and ammonia gas into the channel through the mixing pipe by the first input pipe and the second input pipe.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. according to the invention, the channel is arranged in the first cavity, so that gallium chloride gas and ammonia gas can flow along the channel when entering the first cavity, and the flow path of the gallium chloride gas and the ammonia gas is increased and the mixing reaction time is prolonged due to the fact that the gallium chloride gas and the ammonia gas are led into the channel, so that the gallium chloride gas and the ammonia gas are ensured to be mixed and fully react with the semiconductor substrate plate, the generation of gallium nitride is accelerated, the waste of raw material gas is avoided, and the preparation efficiency of gallium nitride is improved;
2. according to the invention, the heat transfer assembly is arranged in the first cavity, the bottom end of the heat transfer assembly penetrates into the second cavity, and the heating body is arranged in the second cavity and stores the heating medium, so that when the heating body heats the heating medium, heat in the second cavity can be quickly transferred into the channel through the heat transfer assembly, gallium chloride gas and ammonia gas can be quickly heated when passing through the channel, and meanwhile, the semiconductor support carrier plate can be uniformly heated through the flow of high-temperature gas in the channel and the heat transfer assembly, so that the heat distribution of the semiconductor crystal plate placed on the semiconductor support carrier plate is more uniform, and the influence on the semiconductor generation quality caused by heat concentration is avoided.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention. In the drawings:
FIG. 1 is a block diagram of the present invention, which is intended to show the internal structure of a semiconductor fabrication machine body;
fig. 2 is a schematic structural view of the heating body of the present invention, which is intended to show a specific structure;
FIG. 3 is a schematic view of the first cavity of the present invention, which is intended to show a spiral channel therein;
FIG. 4 is a schematic view of a heat transfer assembly of the present invention, intended to show its structure;
fig. 5 is a schematic structural view of the discharging unit of the present invention, which is intended to show the specific structure thereof;
FIG. 6 is a schematic view of the output flat port structure of the present invention, intended to show the barrier strips therein;
fig. 7 is a schematic diagram of the second embodiment, which is intended to show a flow chart of the measurement and control unit.
The reference numerals are represented as follows: 1. a semiconductor fabrication body; 2. a semiconductor manufacturing support; 20. a semiconductor support carrier; 21. a first cavity; 210. a channel; 22. a second cavity; 220. a heating body; 2200. a V-shaped notch; 2201. a heating element; 23. a heat transfer assembly; 230. an outer sleeve; 231. a heat dissipating end; 232. heating end; 233. a heat insulating sleeve; 234. a die structure; 3. a discharge unit; 30. a pipe; 31. an output assembly; 310. a discharge pipe; 311. outputting a flat port; 3110. a barrier strip; 4. a power device; 5. a support structure; 50. an annular fixing seat; 51. an annular mounting seat; 52. a buffer group; 6. a first input tube; 7. a second input tube; 8. a temperature measurement module; 9. a data processing module; 10. and starting and stopping the module.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention. It should be noted that the present invention is already in a practical development and use stage.
Example 1
Referring to fig. 1 to 6, the present embodiment discloses a heating preparation system for semiconductor manufacturing, comprising a semiconductor preparation body 1 and a semiconductor manufacturing chamber located in the semiconductor preparation body 1, wherein a semiconductor manufacturing unit is provided inside the semiconductor manufacturing chamber;
the semiconductor manufacturing unit comprises a semiconductor manufacturing supporting table 2 with a cavity formed inside, a semiconductor supporting carrier plate 20 used for placing a semiconductor crystal plate is embedded in the middle of the top of the semiconductor manufacturing supporting table 2, the inside of the cavity is divided into a first cavity 21 and a second cavity 22 from top to bottom through a baffle plate, a spiral channel 210 is arranged in the first cavity 21, a plurality of heat transfer assemblies 23 are further arranged in the channel 210, the bottom ends of the plurality of heat transfer assemblies 23 penetrate into the second cavity 22, a heating medium is stored in the second cavity 22, a heating body 220 is further arranged in the second cavity, and a discharging unit 3 is further arranged above the semiconductor manufacturing supporting table 2.
Based on the above embodiment, the channel 210 is disposed in the first cavity 21, so that when the gallium chloride gas and the ammonia gas enter the first cavity, the gallium chloride gas and the ammonia gas can flow along the channel 210, and the flow path of the gallium chloride gas and the ammonia gas is increased and the mixing reaction time is prolonged due to the fact that the gallium chloride gas and the ammonia gas are led to be in a spiral shape, so that the gallium chloride gas and the ammonia gas are ensured to be mixed and fully reacted with the semiconductor substrate board, the generation of gallium nitride is accelerated, the generation of byproducts is reduced, the waste of raw material gas is avoided, and the preparation efficiency of gallium nitride is improved; meanwhile, it should be noted that, in this solution, the heat transfer assembly 23 is further disposed in the first cavity 21, and the bottom end of the heat transfer assembly 23 penetrates into the second cavity 22, and the heating body 220 is disposed in the second cavity 22 and stores heating medium, so that when the heating body 220 heats the heating medium, heat in the second cavity 22 can be quickly transferred to the channel 210 through the heat transfer assembly 23, so that when gallium chloride gas and ammonia gas pass through the channel 210, the gas can be quickly heated, and meanwhile, the semiconductor support carrier 20 can be uniformly heated through the flow of high-temperature gas in the channel 210 and the heat transfer assembly 23, so that the heat distribution of the semiconductor crystal plate placed on the semiconductor support carrier 20 is more uniform, and the influence of heat concentration on the semiconductor generation quality is avoided.
Based on the above embodiment, in order to make the heating body 220 quickly and fully heat the heating medium in the second cavity 22, a preferred embodiment of the heating body 220 is described herein, and as shown in fig. 2, it should be clear that the heating medium in the second cavity 22 is preferably heat-conducting oil, and the depth of the heating medium just drops beyond the heating body 220, where the heating body 220 includes a stirring plate that is rotatably disposed, a plurality of V-shaped notches 2200 are formed on an outer circumferential surface of the stirring plate in a ring array shape, and a heating element 2201 is mounted in any V-shaped notch 2200. Because a plurality of V-shaped notches 2200 are formed in the peripheral surface of the stirring disc, after the stirring disc rotates, the stirring disc can play a role in stirring a heating medium, and the heating element 2201 is arranged in the V-shaped notches 2200, so that when the stirring disc stirs the heating medium, the heating element 2201 can synchronously heat the heating medium, the heating medium is quickly and fully heated, the whole heat distribution of the heating medium is ensured to be uniform, and meanwhile, the heating element 2201 is arranged in the V-shaped notches 2200, and the larger impact force generated between the heating element 2201 and the heating medium can be effectively reduced when the stirring disc rotates, so that the heating element 2201 is prevented from being damaged.
Based on the above embodiment, a further preferred mode of the heat transfer assembly 23 is described herein: a plurality of heat transfer modules 23 are alternately arranged in the channel 210 (see fig. 3, wherein dotted arrows indicate gas flow directions), and the structure of the heat transfer modules 23 is described herein with reference to fig. 4, and includes an outer sleeve 230 with a vacuum inside, a heat dissipation end 231 at the top end of the outer sleeve, a heating end 232 at the bottom end of the outer sleeve 230, and a heat insulation sleeve 233 disposed at a middle position outside the body of the outer sleeve 230, wherein the inner wall of the outer sleeve 230 is provided with a tube core structure 234 along the axial direction thereof, the heating end 232 is disposed in a heating medium in the semiconductor manufacturing chamber, and the whole is hemispherical, a heat transfer fluid is further stored inside the heating end 232, the heat dissipation end 231 is disposed in the channel 210, the cross section of which is approximately fusiform, and a plurality of fins (not shown) are preferably disposed outside the heat dissipation end 231. Therefore, when the gallium chloride gas and the ammonia gas flow in the channel 210, the heat dissipation end 231 of the outer sleeve 230 can block and guide the gas, so that the gallium chloride gas and the ammonia gas are fully mixed, the flowing time of the gas in the channel 210 is prolonged, and meanwhile, the contact area between the heat dissipation end 231 and the gas is increased, so that the gas is fully heated. Specifically, based on the above structural design, the heating end 232 is hemispherical, so that the heating end is conducive to being heated in a heating medium in a concentrated manner, so that the heat conduction fluid in the heating end is heated quickly to evaporate quickly, and then high-temperature steam flows upwards into the heat dissipation end 231 quickly under the power of thermal diffusion, and the gallium chloride gas and the ammonia gas in the channel 210 are released to heat quickly through the heat dissipation end 231, and meanwhile, the steam after the heat release in the heat dissipation end 231 is liquefied to an initial state (i.e. liquid state) of the heat conduction fluid, and flows back to the heating end 232 through the pipe core structure 234 (the pipe core structure 234 is preferably made of a porous capillary material so that the liquid heat conduction fluid flows back into the heating end 232 by virtue of the capillary action of the pipe core structure 234), so that the heat in the second cavity 22 is quickly conducted into the first cavity 21 based on the above circulating operation, and the quick heat conduction is realized, so that the quick and uniform heating of the gallium chloride gas and the ammonia gas flowing through the channel 210 is ensured. It should be further noted that, by the above structural design, when the gallium chloride gas and the ammonia gas are heated uniformly and then flow channels are formed in the channels 210, the semiconductor support carrier 20 can be heated uniformly by the heat carried by the gallium chloride gas and the ammonia gas, so that the heat distribution on the semiconductor support carrier 20 is ensured to be uniform, and the semiconductor growth and formation are facilitated.
The present embodiment proposes yet another preferred mode in that: the bottom of the semiconductor manufacturing support table 2 is further provided with a power device 4 through a heat insulation plate, the power device 4 is used for driving the stirring disc to rotate, a support structure 5 is further arranged between the power device 4 and the semiconductor manufacturing support table 2, and the power device 4 is supported and fixed through the support structure 5 and is restrained from vibrating, so that the influence on the semiconductor manufacturing support table 2 is avoided. The power device 4 is preferably a motor, and the provision of the power device 4 helps to power the rotation of the stirring plate, so that the heating medium is uniformly heated by the heating element 2201 after the stirring plate rotates. Further, since the power device 4 is in operation and inevitably generates slight vibration, the vibration is transmitted to the semiconductor manufacturing support table 2, which affects the growth and manufacture of semiconductor (gallium nitride) material, the supporting structure 5 is specially provided to support the power device 4, so as to prevent the vibration generated by the power device 4 (motor) in operation from being transmitted to the semiconductor manufacturing support table 2, which affects the semiconductor manufacturing. This describes the concrete structure of the supporting structure 5, including an annular fixing seat 50 located at the bottom of the semiconductor manufacturing supporting table 2, an annular mounting seat 51 fixedly sleeved outside the power device 4, and a plurality of buffer groups 52 located between the annular fixing seat 50 and the annular mounting seat 51, and a plurality of buffer groups 52 are arranged in an array, wherein any buffer group 52 includes two hydraulic supporting rods, the top ends and the bottom ends of the two hydraulic supporting rods are respectively hinged with the annular fixing seat 50 and the annular mounting seat 51, the bottom ends of the two hydraulic supporting rods are close to each other, and the top ends of the two hydraulic supporting rods are far away from each other to form a structure similar to a V shape. In this way, when the power device 4 works, the plurality of buffer groups 52 positioned between the annular fixed seat 50 and the annular fixed seat 50 can offset and buffer the vibration generated by the power device 4, so as to ensure the stability of the power device 4.
Based on the above embodiment, in order to facilitate the ejection of the semiconductor growth gas generated by mixing gallium chloride gas and ammonia gas and mix the semiconductor growth gas with the semiconductor substrate board on the semiconductor support carrier plate 20 to generate semiconductor crystals, this embodiment proposes a further preferred mode specifically for the discharge unit 3, where the discharge unit 3 includes a pipe 30 located directly above the semiconductor support carrier plate 20 and having a ring shape, the bottom of the pipe 30 is communicated with the channel 210 in the first cavity 21 through a communicating pipe, and a plurality of output assemblies 31 are disposed on the inner annular surface array of the pipe 30, and the specific structure is referring to fig. 5. The output assembly 31 facilitates the converging and spraying of the mixed gas onto the semiconductor support carrier plate 20, so that the mixed gas fully reacts with the semiconductor substrate plate, and the gallium nitride crystal growth and formation are facilitated.
Specifically, referring to fig. 6, any one of the output assemblies 31 includes a discharge pipe 310 having one end thereof ball-jointed with the output end, the discharge pipe 310 is connected with the pipe 30 through a hose, the other end of the discharge pipe 310 is provided with an output flat port 311, and a barrier strip 3110 is provided inside the output flat port 311. Based on the above structure, when the exhaust pipe 310 is used for exhausting the semiconductor growth gas, the gas can generate recoil force to the exhaust pipe 310, so that after the exhaust pipe 310 receives the recoil force, the exhaust pipe 30 can swing in an unordered way, and then the exhaust pipe 310 forms multiple paths of different air flows when exhausting the gas, so that the exhaust pipe can fully contact and react with the semiconductor substrate plate, meanwhile, the output flat port 311 is arranged, and the baffle strip 3110 is arranged in the output flat port 311. Wherein the flow direction of the ejected gas is shown by the arrow in fig. 5.
Based on the above embodiment, it should be noted that the first input pipe 6 and the second input pipe 7 are respectively disposed on two sides of the semiconductor preparation machine body 1, and one ends of the first input pipe 6 and the second input pipe 7 extend into the baffle and are communicated with the channel 210 through the mixing pipe (specific structure is shown in fig. 1, and the dashed line structure in the baffle is the communication state of the first input pipe 6, the second input pipe 7 and the mixing pipe). Based on the above structure, the user can conveniently charge gallium chloride gas and ammonia gas into the channel 210 in the first chamber 21 through the mixing pipe through the first input pipe 6 and the second input pipe 7.
Example 2
Based on embodiment 1, it should be further explained here that, in this embodiment, in order to further improve the use effect of the system, preferably, the power device 4 may intermittently operate, that is, when the heat distribution of the heating medium in the second cavity 22 is uniform, the power device 4 may not operate, and if the heat distribution of the heating medium is not uniform, the power device 4 starts to operate, and in order to achieve this purpose, it may be anticipated that a measurement and control unit is further provided, as shown in fig. 7, the measurement and control unit includes a temperature measuring module 8, a data processing module 9 and a start-stop module 10, wherein the temperature measuring module 8 includes a plurality of temperature sensors randomly arranged in the second cavity 22, and the output ends of the plurality of temperature sensors are in signal connection with the input ends of the data processing module 9, the data processing module 9 is in signal connection with the start-stop module 10, and the start-stop module 10 is electrically connected with the power device 4, and if the heat distribution of the heating medium in the second cavity 22 is not uniform, and the measured data is output to the data processing module 9, as shown in fig. 7, the measured data is the heat distribution is not uniform, and the heat distribution is equal, if the heat distribution is equal, the heat distribution is not required, the heat distribution is equal, the heat distribution is completely needs to be equal, the heat distribution is completely has a threshold value, and the heat distribution is equal, and the heat distribution is completely has a waiting time equal when the heat distribution is equal, and the temperature difference is equal to the heat distribution is required to the heat distribution is completely needs to be equal, and the heat distribution is equal to the heat medium and the heat distribution is in the temperature condition and the temperature condition is equal to be in the temperature condition and has a temperature is waiting condition is equal, therefore, the data processing module 9 controls the start-stop module 10 to be in a stop-off state at this time, the power device 4 is not powered on, and if the data processing module 9 is in an unequal state after comparing the temperature data thereof (i.e. the temperature difference data is greater than a reasonable temperature difference threshold value), it is indicated that the heat distribution in the heating medium is uneven at this time, so the data processing module 9 controls the start-stop module 10 to be in a start-on state, and the power device 4 is powered on to start working. The temperature sensor and the data processing module 9 are both conventional in the prior art, and the start-stop module 10 can be regarded as an electronic switch, so that the principle thereof is clearly understood by the skilled person, and therefore the circuit principle thereof is not repeated herein.
The foregoing detailed description of the invention has been presented for purposes of illustration and description, and it should be understood that the invention is not limited to the particular embodiments disclosed, but is intended to cover all modifications, equivalents, alternatives, and improvements within the spirit and principles of the invention.
Claims (8)
1. A heating preparation system for semiconductor manufacturing, comprising a semiconductor preparation body (1) and a semiconductor manufacturing cavity located within the semiconductor preparation body (1), characterized in that a semiconductor manufacturing unit is provided inside the semiconductor manufacturing cavity;
the semiconductor manufacturing unit comprises a semiconductor manufacturing supporting table (2) with a cavity formed inside, a semiconductor supporting carrier plate (20) used for placing a semiconductor crystal plate is embedded in the middle of the top of the semiconductor manufacturing supporting table (2), the inside of the cavity is divided into a first cavity (21) and a second cavity (22) from top to bottom through a baffle plate, a spiral channel (210) is arranged in the first cavity (21), a plurality of heat transfer assemblies (23) are further arranged in the channel (210), the bottom ends of the heat transfer assemblies (23) penetrate into the second cavity (22), a heating medium is stored in the second cavity (22), a heating body (220) is further arranged in the second cavity, and a discharging unit (3) is further arranged above the semiconductor manufacturing supporting table (2).
2. A heated preparation system for semiconductor manufacturing as defined in claim 1 wherein: the heating body (220) comprises a stirring disc which is rotatably arranged, a plurality of V-shaped notches (2200) are formed in the outer circumferential surface of the stirring disc in an annular array shape, and a heating element (2201) is arranged in any V-shaped notch (2200).
3. A heated preparation system for semiconductor manufacturing as defined in claim 1 wherein: the heat transfer assemblies (23) are distributed in the channels (210) in a staggered mode, any heat transfer assembly (23) comprises an outer sleeve (230) with vacuum inside, a heat dissipation end (231) arranged at the top end of the outer sleeve, a heating end (232) arranged at the bottom end of the outer sleeve (230), and a heat insulation sleeve (233) arranged at the middle position outside the tube body of the outer sleeve (230), a tube core structure (234) is arranged on the inner wall of the outer sleeve (230) along the axial direction of the outer sleeve, the heating end (232) is positioned in a heating medium in a semiconductor manufacturing cavity, the whole heat transfer assembly is hemispherical, heat conduction fluid is stored in the heating end (232), and the heat dissipation end (231) is positioned in the channels (210) and has a cross section similar to a spindle shape.
4. A heated preparation system for semiconductor manufacturing as defined in claim 1 wherein: the bottom of the semiconductor manufacturing supporting table (2) is further provided with a power device (4) through the heat insulation plate, the power device (4) is used for driving the stirring disc to rotate, a supporting structure (5) is further arranged between the power device (4) and the semiconductor manufacturing supporting table (2), and the power device (4) is supported and fixed through the supporting structure (5) and is restrained from vibrating, so that the influence on the semiconductor manufacturing supporting table (2) is avoided.
5. A heated preparation system for semiconductor manufacturing as defined in claim 4 wherein: the supporting structure (5) comprises an annular fixing seat (50) positioned at the bottom of the semiconductor manufacturing supporting table (2), an annular mounting seat (51) fixedly sleeved outside the power device (4), and a plurality of buffer groups (52) positioned between the annular fixing seat (50) and the annular mounting seat (51), wherein the buffer groups (52) are arranged in an array manner, any one of the buffer groups (52) comprises two hydraulic supporting rods, the top ends and the bottom ends of the two hydraulic supporting rods are hinged with the annular fixing seat (50) and the annular mounting seat (51) respectively, the bottom ends of the two hydraulic supporting rods are mutually close, the top ends of the two hydraulic supporting rods are mutually far away, and an approximately V-shaped structure is formed.
6. A heated preparation system for semiconductor manufacturing as defined in claim 1 wherein: the discharging unit (3) comprises a pipeline (30) which is positioned right above the semiconductor support carrier plate (20) and is annular, the bottom of the pipeline (30) is communicated with a channel (210) in the first cavity (21) through a communicating pipe, and a plurality of output assemblies (31) are arranged on an inner annular surface array of the pipeline (30).
7. A thermal fabrication system for semiconductor fabrication as recited in claim 6, wherein: any output assembly (31) includes discharge pipe (310) that one end and output phase ball connect, discharge pipe (310) are linked together with pipeline (30) through the hose, the other end of discharge pipe (310) is equipped with output flat mouth (311), the inside of output flat mouth (311) is equipped with barrier strip (3110).
8. A heated preparation system for semiconductor manufacturing as defined in claim 1 wherein: the semiconductor preparation machine body (1) is characterized in that a first input pipe (6) and a second input pipe (7) are respectively arranged on two sides of the semiconductor preparation machine body (1), and one ends of the first input pipe (6) and the second input pipe (7) extend into the baffle and are communicated with the channel (210) through the mixing pipe.
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| CN117253773B (en) | 2024-01-23 |
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