CN117248187A - Special-shaped target material and magnetron sputtering process - Google Patents
Special-shaped target material and magnetron sputtering process Download PDFInfo
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- CN117248187A CN117248187A CN202311387940.6A CN202311387940A CN117248187A CN 117248187 A CN117248187 A CN 117248187A CN 202311387940 A CN202311387940 A CN 202311387940A CN 117248187 A CN117248187 A CN 117248187A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000013077 target material Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 abstract description 16
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 40
- 238000007747 plating Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
The invention provides a special-shaped target material, which comprises the following components: a planar main portion provided so as to be opposed to the substrate; the inclined auxiliary part extends outwards from the edge of the plane main part and is obliquely arranged towards the direction of the substrate, and an included angle between the inclined auxiliary part and the plane main part is 5-45 degrees; the planar main portion may be circular, and correspondingly, the inclined auxiliary portion is annular disposed around the planar main portion; the width of the plane main part is larger than that of the substrate but not more than 110% of that of the substrate, and the whole width of the plane main part and the inclined auxiliary part is 130% -160% of that of the substrate. The invention also provides a magnetron sputtering process using the special-shaped target. The invention can ensure that the film thickness uniformity of the film formed by magnetron sputtering coating is better, and simultaneously realize better film coating effect of the microporous inner wall.
Description
Technical Field
The invention relates to the PVD (physical vapor deposition) field, in particular to a special-shaped target material for magnetron sputtering and a magnetron sputtering process.
Background
The magnetron sputtering process belongs to one of PVD processes; the magnetron sputtering process is a common thin film deposition technology;
in the magnetron sputtering process, a target material is used as a cathode, and a substrate is used as an anode; the back of the target is provided with a magnet so as to generate a magnetic field in the space of the front of the target; applying a negative bias to the target so that the gas is broken down to generate a discharge phenomenon; electrons collide with atoms (such as Ar atoms) of the introduced process gas in the process of flying to the substrate, and positive ions (such as Ar+ ions) and electrons with charge energy are ionized; the charged positive ions are accelerated to fly to the target material and bombard the surface of the target material under the action of an electric field, so that the target material is sputtered to generate sputtered particles, and the substrate on which the sputtered particles fly to the opposite surface of the target material forms a film on the surface of the substrate; electrons are restrained by a magnetic field in the space of the front of the target and are restrained in a plasma area close to the front of the target, and collide with atoms of the process gas for a plurality of times; as the electron energy decreases it gradually moves away from the front of the target and eventually also deposits onto the substrate.
The target material commonly used at present is a planar target material; there are mainly two problems in depositing a thin film on the surface of a substrate;
1) The film thickness uniformity of the thin film is poor; typically, the film in the middle region of the substrate is thicker than the film in the edge region of the substrate.
2) In the existing semiconductor technology, the substrate needing magnetron sputtering coating comprises a planar substrate and a substrate with a microporous structure on the surface; with the continuous development of semiconductor devices, the hole structure is continuously developed towards the direction of increasing the depth-to-width ratio (i.e. the depth of the hole is larger than the caliber), and in the edge area of the substrate, sputtered particles are more difficult to reach the side wall and the bottom of the micropore, so that the difficulty of plating a uniform film on the inner wall of the micropore is greater.
Disclosure of Invention
In order to solve at least one technical problem in the prior art, the embodiment of the invention provides a special-shaped target and a magnetron sputtering process, which can ensure that the uniformity of the film thickness of a film formed by magnetron sputtering coating is better, and simultaneously realize a better film plating effect of the inner wall of a micropore. In order to achieve the technical purpose, the technical scheme adopted by the embodiment of the invention is as follows:
in a first aspect, an embodiment of the present invention provides a profiled target, including:
a planar main portion provided so as to be opposed to the substrate;
the inclined auxiliary part extends outwards from the edge of the plane main part and is obliquely arranged towards the direction of the substrate, and an included angle between the inclined auxiliary part and the plane main part is 5-45 degrees.
Further, the planar main portion is circular, and the inclined auxiliary portion is annular disposed around the planar main portion.
Further, the plane main part is rectangular, and the inclined auxiliary parts are rectangles distributed on two sides of the plane main part.
More preferably, the included angle between the inclined auxiliary part and the plane main part is 25-35 degrees.
Further, the planar main portion has a width greater than the width of the substrate but no more than 110% of the width of the substrate.
Further, the overall width of the plane main part and the inclined auxiliary part is 130% -160% of the width of the substrate.
In a second aspect, an embodiment of the present invention provides a magnetron sputtering process using a profiled target as described above, comprising the steps of:
s10, arranging a special-shaped target in a magnetron sputtering cavity to face a substrate; the distance between the substrate and the plane main part of the special-shaped target material is adjusted to be a first interval; controlling the sputtering power to be the first power; introducing process gas to perform magnetron sputtering; for a first period of time;
step S20, adjusting the distance between the substrate and the plane main part of the special-shaped target material to be a second interval; the second pitch is within 8% greater than the first pitch; controlling the sputtering power to be the second power; the second power is within 12% greater than the first power; introducing process gas to perform magnetron sputtering; for a second period of time;
step S30, adjusting the distance between the substrate and the plane main part of the special-shaped target material to be a third interval; the third pitch is within 6% greater than the second pitch; controlling the sputtering power to be a third power; the third power is within 8% greater than the second power; introducing process gas to perform magnetron sputtering; for a third period of time.
Further, the duration of the second period is the same as the first period.
Further, the duration of the third period is the same as the first period.
The technical scheme provided by the embodiment of the invention has the beneficial effects that: when the substrate is coated, compared with the prior art, the film with better uniformity can be obtained on the surface of the substrate through the special-shaped target and the magnetron sputtering process, and the coating effect on the inner wall of the micropore in the edge area of the substrate is better for the substrate with the micropore.
Drawings
Fig. 1 is a schematic view of a planar target structure in the prior art.
Fig. 2 is a schematic structural diagram of a profiled target in an embodiment of the invention.
FIG. 3 is a schematic diagram of film thickness measurement in an embodiment of the invention.
FIG. 4 is a graph showing the effect of filling holes in the microporous coating film of the planar target according to the embodiment of the present invention.
Fig. 5 is a graph showing the effect of filling holes in the microporous coating film of the special-shaped target in the embodiment of the invention.
Fig. 6 is a flow chart of a magnetron sputtering process in an embodiment of the invention.
FIG. 7 is a graph showing the effect of filling holes in a microporous coating film by a magnetron sputtering process according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
As shown in fig. 2, an embodiment of the present invention proposes a profiled target, including:
a planar main portion 10, the planar main portion 10 being provided so as to oppose the substrate 30;
the inclined auxiliary part 20 extends outwards from the edge of the plane main part 10 and is obliquely arranged towards the direction of the substrate 30, and an included angle between the inclined auxiliary part 20 and the plane main part 10 is 5-45 degrees, as shown by theta in figure 2;
compared with the sputtering angle distribution of single sputtering particles of the traditional planar target, the target is added with the inclined auxiliary part 20, and sputtering particles generated by magnetron sputtering can fly to the substrate 30 from more different angles; the film is easier to uniformly distribute on the surface of the substrate 30, and a film with uniform thickness can be formed on the surface of the substrate 30; the sputtering particles with multiple sputtering angles are easier to plate a uniform film in micropores of the edge area of the substrate, so that a better hole filling effect is obtained.
In a specific embodiment, the planar main portion 10 is circular, and the inclined auxiliary portion 20 is annular disposed around the planar main portion 10; the profiled target of this construction can be matched to a conventional circular substrate 30.
In another specific embodiment, the planar main portion 10 is rectangular, and the inclined auxiliary portions 20 are rectangular distributed on two sides of the planar main portion 10; the profiled target of this construction can be matched to a rectangular substrate 30.
Further, the included angle between the inclined auxiliary part 20 and the plane main part 10 is 25-35 degrees, and the film thickness uniformity of the special-shaped target material in the included angle range is excellent during magnetron sputtering.
Further, the width of the planar main portion 10 is greater than the width of the substrate 30, but not more than 110% of the width of the substrate 30;
further, the overall width of the planar main portion 10 and the inclined auxiliary portion 20 is 130% -160% of the width of the substrate 30;
the flat main portion 10 and the inclined auxiliary portion 20 having the widths described above can ensure uniformity of film thickness of the plating film of the substrate 30 and uniform thin film plating in the micro holes of the edge region of the substrate.
The special-shaped target is a metal target, and the material of the special-shaped target can be metal such as aluminum, copper, titanium or metal alloy.
Example 1: optimization effect of film thickness uniformity (compared with planar target);
the special-shaped target material and the existing planar target material are adopted respectively; as shown in fig. 1, the planar target includes only a planar main portion 10; performing a magnetron sputtering coating test; the abnormal target and the plane target are both made of aluminum, the distance between the substrate and the target is 60mm (for the abnormal target, the distance between the substrate and the plane main part 10 is 60 mm), and the substrate adopts 8 inch silicon oxide; the back surfaces of the special-shaped target and the planar target are provided with magnets 40; the included angle between the inclined auxiliary part 20 and the plane main part 10 is 30 degrees; plating an Al film with the thickness of about 1 micron on the surface of an 8-inch silicon oxide substrate; observing the thin-thickness distribution of the cross section of the substrate under an electron microscope, wherein a thin-film measuring point 301 is shown in FIG. 3; a total of 9 thin film measurement points 301 are distributed on the surface of the substrate 30 in a cross shape; setting an actual film thickness mean value a of 9 film measuring points, wherein the actual film thickness standard deviation of the 9 film measuring points is b; the uniformity of the film thickness is b/a 100%;
list one
| Target material | Al |
| Distance of substrate from target | 60mm |
| Substrate type | 8 inch silicon oxide |
| Target type | Uniformity of film thickness |
| Planar target material | 1.2％ |
| Special-shaped target material | 0.7％ |
As can be seen from the first table, the special-shaped target material can achieve a better film thickness uniformity effect.
Example 2: optimization effect of film thickness uniformity (compared with planar target);
watch II
It can be seen from the second table that the variation of the distance between the substrate and the target by the abnormal target is more adaptive, and the excellent uniformity of the film thickness is easier to obtain.
Example 3: hole filling effect (compared with planar target);
watch III
In fig. 4, the thickness d1= 242.90nm of the thin film 50 is plated in the substrate microwells by planar target magnetron sputtering, and in fig. 5, the thickness d1= 327.52nm of the thin film 50 is plated in the substrate microwells by profiled target magnetron sputtering; it can be seen that the film 50 of fig. 4 is discontinuous and has voids; the film 50 in fig. 5 is continuous and thick, and the effect of plating the micropores on the edge area of the substrate is better and the hole filling effect is better by magnetron sputtering of the special-shaped target.
The embodiment of the invention also provides a magnetron sputtering process using the special-shaped target, as shown in fig. 6, comprising the following steps:
s10, arranging a special-shaped target in a magnetron sputtering cavity to face a substrate; the distance between the substrate and the plane main part of the special-shaped target material is adjusted to be a first interval; controlling the sputtering power to be the first power; introducing process gas to perform magnetron sputtering; for a first period of time;
the duration of the first time period is determined according to the thickness of the plating film;
step S20, adjusting the distance between the substrate and the plane main part of the special-shaped target material to be a second interval; the second pitch is within 8% greater than the first pitch; controlling the sputtering power to be the second power; the second power is within 12% greater than the first power; introducing process gas to perform magnetron sputtering; for a second period of time;
the duration of the second time period is determined according to the thickness of the plating film, and can be the same as the first time period;
step S30, adjusting the distance between the substrate and the plane main part of the special-shaped target material to be a third interval; the third pitch is within 6% greater than the second pitch; controlling the sputtering power to be a third power; the third power is within 8% greater than the second power; introducing process gas to perform magnetron sputtering; for a third period of time;
the duration of the third time period is determined according to the thickness of the plating film, and can be the same as the first time period;
specifically, the material of the special-shaped target material can be metals such as aluminum, copper, titanium and the like or metal alloys;
in a specific embodiment, the first pitch is 50mm and the first power is 3KW; the second distance is 53mm, and the second power is 3.3KW; the third distance is 55mm, and the third power is 3.5KW;
specifically, the duration of the first time period, the second time period and the third time period is 18-22 s;
example 4: magnetron sputtering process
Table four
It can be seen from example 4 that, in different process positions, the angular distribution of the sputtered particles received by the substrate is inconsistent, and for plating a layer of film, the sputtered particles received by the substrate in different sputtering angles at a plurality of process positions are overlapped and then are complemented, so that the effect of better uniformity of film thickness is finally realized;
in addition, by the process, better plating effect of the microporous inner wall film can be realized at the same time; referring to fig. 7, the thickness d1= 107.62nm of the plated film 50 in the substrate microwells in fig. 7; the hole filling effect obtained by the magnetron sputtering process of example 4 was similar to that of example 3, and the film 50 of the microporous inner wall in fig. 7 was void-free and exhibited continuity.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to the examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present invention.
Claims (9)
1. A profiled target, comprising:
a planar main portion (10), the planar main portion (10) being provided so as to oppose the substrate (30);
the inclined auxiliary part (20), the inclined auxiliary part (20) outwards extends from the edge of the plane main part (10) and is obliquely arranged towards the direction of the substrate (30), and the included angle between the inclined auxiliary part (20) and the plane main part (10) is 5-45 degrees.
2. A profiled target as claimed in claim 1, wherein,
the plane main part (10) is circular, and the inclined auxiliary part (20) is annular arranged around the plane main part (10).
3. A profiled target as claimed in claim 1, wherein,
the plane main part (10) is rectangular, and the inclined auxiliary parts (20) are rectangles distributed on two sides of the plane main part (10).
4. A profiled target as claimed in any one of claims 1 to 3,
the included angle between the inclined auxiliary part (20) and the plane main part (10) is 25-35 degrees.
5. A profiled target as claimed in any one of claims 1 to 3,
the width of the planar main portion (10) is greater than the width of the substrate (30) but not more than 110% of the width of the substrate (30).
6. A profiled target as claimed in any one of claims 1 to 3,
the whole width of the plane main part (10) and the inclined auxiliary part (20) is 130% -160% of the width of the substrate (30).
7. Magnetron sputtering process using a profiled target as claimed in any one of claims 1 to 6, characterized in that it comprises the following steps:
s10, arranging a special-shaped target in a magnetron sputtering cavity to face a substrate; the distance between the substrate and the plane main part of the special-shaped target material is adjusted to be a first interval; controlling the sputtering power to be the first power; introducing process gas to perform magnetron sputtering; for a first period of time;
step S20, adjusting the distance between the substrate and the plane main part of the special-shaped target material to be a second interval; the second pitch is within 8% greater than the first pitch; controlling the sputtering power to be the second power; the second power is within 12% greater than the first power; introducing process gas to perform magnetron sputtering; for a second period of time;
step S30, adjusting the distance between the substrate and the plane main part of the special-shaped target material to be a third interval; the third pitch is within 6% greater than the second pitch; controlling the sputtering power to be a third power; the third power is within 8% greater than the second power; introducing process gas to perform magnetron sputtering; for a third period of time.
8. The magnetron sputtering process of a profiled target as claimed in claim 7, wherein,
the second time period has the same duration as the first time period.
9. The magnetron sputtering process of a profiled target as claimed in claim 7, wherein,
the duration of the third period is the same as the first period.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311387940.6A CN117248187A (en) | 2023-10-24 | 2023-10-24 | Special-shaped target material and magnetron sputtering process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311387940.6A CN117248187A (en) | 2023-10-24 | 2023-10-24 | Special-shaped target material and magnetron sputtering process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117248187A true CN117248187A (en) | 2023-12-19 |
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| CN202311387940.6A Pending CN117248187A (en) | 2023-10-24 | 2023-10-24 | Special-shaped target material and magnetron sputtering process |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810347A (en) * | 1988-03-21 | 1989-03-07 | Eaton Corporation | Penning type cathode for sputter coating |
| JPH02173260A (en) * | 1988-12-26 | 1990-07-04 | Fuji Photo Film Co Ltd | Sputtering device |
| JPH05287524A (en) * | 1992-04-09 | 1993-11-02 | Anelva Corp | Target for magnetron sputtering |
| US5626727A (en) * | 1994-07-20 | 1997-05-06 | Matsushita Electric Industrial Co., Ltd. | Sputtering apparatus and method |
| JP2000129436A (en) * | 1998-08-19 | 2000-05-09 | Asahi Glass Co Ltd | Inline type sputtering device and sputtering method |
| JP2003027225A (en) * | 2001-07-13 | 2003-01-29 | Canon Inc | Sputtering target and sputtering system |
| US20100252416A1 (en) * | 2009-04-03 | 2010-10-07 | Applied Materials, Inc. | Sputtering Target for PVD Chamber |
| US20110089031A1 (en) * | 2009-10-16 | 2011-04-21 | Suntek Precision Corp. | Sputtering System with Normal Target and Slant Targets on the Side |
-
2023
- 2023-10-24 CN CN202311387940.6A patent/CN117248187A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810347A (en) * | 1988-03-21 | 1989-03-07 | Eaton Corporation | Penning type cathode for sputter coating |
| JPH02173260A (en) * | 1988-12-26 | 1990-07-04 | Fuji Photo Film Co Ltd | Sputtering device |
| JPH05287524A (en) * | 1992-04-09 | 1993-11-02 | Anelva Corp | Target for magnetron sputtering |
| US5626727A (en) * | 1994-07-20 | 1997-05-06 | Matsushita Electric Industrial Co., Ltd. | Sputtering apparatus and method |
| JP2000129436A (en) * | 1998-08-19 | 2000-05-09 | Asahi Glass Co Ltd | Inline type sputtering device and sputtering method |
| JP2003027225A (en) * | 2001-07-13 | 2003-01-29 | Canon Inc | Sputtering target and sputtering system |
| US20100252416A1 (en) * | 2009-04-03 | 2010-10-07 | Applied Materials, Inc. | Sputtering Target for PVD Chamber |
| US20110089031A1 (en) * | 2009-10-16 | 2011-04-21 | Suntek Precision Corp. | Sputtering System with Normal Target and Slant Targets on the Side |
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