JPH11193459A - Opposite magnetron composite sputtering device and formation of thin coating - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase the sputtering efficiency of the peripheral part which has been impossible heretofore, to increase the target utilizing efficiency at a higher speed and to maintain stable sputtering free from the concentration of magnetic flux on the target center parts and small in arc discharge for a long time. SOLUTION: This opposite magnetron composite sputtering device is provided with targets arranged in such a manner that the sputtering faces are confronted with and a magnetic field generating means 10 provided on the back faces of the targets and generating magnetic fields in directions vertical to the sputtering faces and forms coating on a substrate 40 arranged so as to confront with spaces in the side directions of the sputtering faces. In this case, the sputtering faces are provided wish the means in which the magnetic field generating means radially generates magnetic fields from the inside target to the outside target on the inside face of the outside target and on the outside face of the inside target in a concentric shape in which a pair of opposite primary target T1 and secondary target T2 are confronted at prescribed intervals, and a third target T3 with an endless shape is arranged so as to confront with either space of one side of the sputtering faces.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a facing target type sputtering apparatus and a thin film forming method in which a set of targets face each other at a predetermined interval and a thin film is formed on a substrate disposed on one side of the target. More specifically, a facing target type sputtering apparatus in which the thickness distribution of a thin film to be formed can be easily adjusted, a uniform thickness can be formed at a high speed for a long time and in a large area, and the target use efficiency is improved. The present invention relates to a facing magnetron composite sputtering apparatus and a thin film forming method.

[0002]

2. Description of the Related Art A conventional facing target type sputtering apparatus is described in "Applied Physics", Vol. 48 (1979) No. 6, p588.
As shown in FIG. 8, a pair of targets t1 and t2 serving as cathodes are provided so that their sputtering surfaces face each other with a space therebetween, and a magnetic field H in a direction perpendicular to the sputtering surfaces is provided. Providing means for generating h1, h2,
This is an excellent sputter apparatus capable of forming a thin film at high speed and low temperature on a substrate 5 on which a holder 6 arranged on the side of the space between the targets is mounted.

That is, in FIG. 8 of this report, 300 to 500 in a direction perpendicular to the sputtering surfaces t1s and t2s.
If an Oe magnetic field H is generated, the space S between the opposed targets can be obtained.
High-energy electrons emitted from the sputtering surfaces t1s and t2s can be confined in the inside.

[0004] Therefore, since the large number of electrons do not reach the substrate 5, an electric field for converging the ions is not formed, the ionization of the sputtering gas is promoted, the sputtering speed is increased, and the electron collision with the substrate 5 is almost impossible. There is no substrate temperature rise.

[0005]

However, when sputtering is performed using the above-described target apparatus having a rectangular target, a phenomenon in which the erosion region of the target is concentrated at the center of the target as the applied power increases as shown in FIG. Be looked at. This is because, in the space between the opposing targets, high-energy electrons are large inside the space, and conversely, they are small outside the space because they diffuse outside the space. In particular, such a phenomenon is remarkable when the target is a non-magnetic material. Such concentration of the erosion region not only adversely affects the film thickness distribution, but also causes a spark when a large power is applied in order to increase the speed of sputtering, which is not preferable. Also,
The erosion at the center of the target results in the target life being defined, and the target utilization efficiency is not always sufficient. In addition, in the method in which the shield cover of the target is devised, although the concentration of discharge in the central portion is prevented, effective sputtering cannot be performed in the peripheral portion, and the film thickness distribution, target use efficiency, etc. Is not completely solved in terms of

In addition, if sputtering is continued for a long time, the target surface shape changes with the progress of erosion, and the magnetic field distribution changes, so that the discharge intensity changes and the film thickness distribution deteriorates. Further, when a region where the electric field and the magnetic field are substantially parallel is concentrated at the center of the target, an abnormal discharge may occur due to the concentration of the supplied power.

Further, with respect to the improvement of the film thickness distribution in the longitudinal direction of a large-area substrate, measures have been taken to increase the length of the target in the longitudinal direction with respect to the effective width of the substrate. The method in which the substrate passes through the side surface of the space S between them has been adopted. However, this method has drawbacks such as a decrease in the effective utilization rate of the target and the film formation rate and an increase in the size of the apparatus, and thus cannot always be said to be an effective method. Japanese Patent Publication No. 43630/1994 discloses a sputtering apparatus in which a concave target 9 generates a magnetron discharge. However, this apparatus performs sputtering only by magnetron discharge, and it is difficult to keep the generated plasma sufficiently in the recesses. As a result, it takes a long time to coat the substrate.

An object of the present invention is to completely prevent the erosion region of the target from changing over time, thereby making the film formation speed formed on the substrate high and uniform, and keeping the sputtering speed constant. Another object is to improve the use efficiency of the target.

[0009]

SUMMARY OF THE INVENTION The object of the present invention is to provide a method in which a first sputtering surface comprising an endless outer wall surface of a first target is provided on a second sputtering surface comprising an endless opposing wall surface of a second target.
Opposing target arranging means for arranging the first and second targets such that the sputtering surfaces face each other, and opposing a space between the first sputtering surface and the second sputtering surface. A target disposing means for disposing a third target such that a third sputtering surface is located; and an opening in a space surrounded by the third target between the first target and the second target. A facing magnetron composite sputtering apparatus comprising: a substrate holding member for arranging a substrate facing each other; and a magnetic field generating unit for generating a magnetic field in a direction perpendicular to the first and second sputtering surfaces. A first power supply means for forming an opposing discharge on the sputter surfaces of the first and second targets; and a magnetron formed on the third sputter surface of the third target. It is accomplished by providing a counter magnetron composite sputtering apparatus characterized by a second electric field supply means for supplying power independently of because of the first power supply means.

In the above-mentioned present invention, it is preferable that the first target has a cylindrical shape.

Preferably, the first target has a rectangular shape with sharp corners or a polygonal shape.

[0012] It is preferable that at least two or more sets of target assemblies each including the first target, the second target, and the third target are arranged.

According to the present invention, the first sputtering surface comprising the non-terminal outer wall surface of the first target is opposed to the second sputtering surface comprising the non-terminal opposed wall surface of the second target. The first and second targets are arranged, and the third sputter surface is positioned so that the third sputter surface is located opposite to the space between the first sputter surface and the second sputter surface. And a substrate is disposed facing an opening surrounded by the first target, the second target, and the third target, and the first and second substrates are disposed.
In a state where a magnetic field is applied in a direction perpendicular to each of the sputtering surfaces of the first and second targets, the first power supply means supplies electric power to the sputtering surfaces of the first and second targets to generate an opposite discharge, and A second power supply means for supplying power to the third sputtering surface of the third target to generate a magnetron discharge, thereby forming a thin film on the substrate; Another object of the present invention is to provide a method of forming a thin film by a composite discharge.

In the above-mentioned present invention, it is preferable that the first target has a cylindrical shape, a rectangular shape with sharp corners, or a polygonal shape.

It is preferable that at least one of the first power supply means and the second power supply means supply a direct current or an alternating current. Further, it is preferable that at least one of the first power supply unit and the second power supply unit supplies a high-frequency current.

Preferably, a phase of an AC electric field different from a phase of an AC electric field supplied to the first target and the second target is supplied to the third target.

It is preferable that the first, second, and third sputtering surfaces be the same member, and that the member be any one selected from the group consisting of a metal, a semiconductor, an oxide, and a nitride. .

Further, it is preferable to form a thin film constituting the semiconductor device, and it is preferable that the semiconductor device is any one of a thin film transistor and an electroluminescent element.

(Operation) According to the present invention described above, the pair of first and second targets are opposed to each other in an endless shape, and the sputtering surfaces are the inner surface of the outer target and the outer surface of the inner target. A means for radially generating the outer target is provided, and the third target is arranged so as to face one space on one side of the opening of the sputtering surface, so that in any area of the center of the pair of the first and second targets Also in this case, the condition that the electric field and the magnetic field become parallel is the same, and the opposed discharge can be generated in a closed loop. Furthermore, by forming a uniform magnetic field substantially parallel to the sputter surface of the ring-shaped third target, the electric field and the magnetic field become substantially orthogonal over the entire sputter surface of the third target. A uniform magnetron discharge can be generated. In addition, the high-energy electrons generated by the discharge easily stay in the space surrounded by the first, second, and third targets.
As a result, the outer peripheral portions of the sputter surfaces of the first, second, and third targets are all sputtered to the same extent as the central portion. Therefore, the utilization efficiency of each of the first, second, and third targets is improved. Further, by optimizing the lengths in the long side and short side directions by setting the target shape to a cylindrical shape or a rectangular shape with sharp corners, it is possible to uniformly form a thin film on a large-area substrate.

Further, according to the present invention, the sputtering apparatus of the present invention has power supply means for supplying electric power to each of the first, second, and third targets independently of each other. Discharge and magnetron discharge can be generated simultaneously.

Further, by arranging a plurality of sets of the targets in a block shape, the film forming speed can be improved.

Accordingly, the film thickness distribution on a large-area substrate becomes more uniform than before, and the change in the distribution over time can be reduced to keep the film thickness uniform. In addition, a large power can be applied, and by arranging a plurality of sets, the sputtering speed is increased and the use efficiency of the target is improved.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) The details of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a combined facing target type sputtering apparatus according to a first embodiment of the present invention, and FIG. 2 is a front view showing a specific example of the target portion.

In FIG. 1, reference numeral 10 denotes a vacuum chamber, 2
Reference numeral 0 denotes an exhaust system including a vacuum pump for exhausting the chamber 10, and reference numeral 30 denotes a gas introduction system. In the vacuum chamber 10, target holders 55, 15, and 16 fixed to the chamber 10 via insulating members 11, 12, 13, and 14 are provided as shown in the drawing.
5 and 16 are a pair of cylindrical first and second targets T.
1 and T2 are disposed so as to face each other in parallel with a space therebetween, and the holder 55 has a ring-shaped third side so as to close an opening on one side of the space (the opposite side through which the substrate passes). The target T3 is disposed. Target T1, T
2 and T3 are in contact with each other.

Behind the cylindrical targets T1 and T2, ring-shaped permanent magnets 151 and 161 serving as magnetic field generating means are provided.
Are arranged facing each other. Target T1, T
2, T3 and the corresponding target holder 15, 1
The cooling water circulates through the cooling pipes 154 and 164 to the target T1, T2, T3 and the permanent magnet 1
51 and 161 are cooled.

The magnets 151, 161 are connected to the targets T1, T
A core 17 made of a ferromagnetic material such as permalloy or soft iron is provided so that the N pole and the S pole face each other in order to increase the magnet density in the space between the pair of cylindrical targets T1 and T2. And the permanent magnets 151 and 161 form a closed loop. Reference numerals 18 and 19 denote shield covers used as insulating plates for the insulating members 11, 12, 13, 14 and the target holders 15, 16, and also function as anodes. The shield covers 18 and 19 are in contact with the vacuum chamber 10 and are grounded by earth.

A substrate holding means 41 for holding a long substrate 40 on which a thin film is formed is provided by a substrate transfer system 50 in a direction perpendicular to the surfaces of the first and second targets T1 and T2 and in a third direction. Can be reciprocated in the front-rear direction of the drawing while being held in a direction parallel to the surface of the target T3 of FIG.
2 and can move in a direction parallel to T3. Note that a heating means 42 capable of adjusting the temperature from the back surface of the substrate 40 is provided.

On the other hand, the first and second
Are electrically independent from each other, the power supply means 60 supplies power to the targets T1 and T2, and the power supply means 61 supplies power to the target T3, respectively. The negative side is connected to the targets T1, T2, T3. In addition, the first and second
Power supply means 60 and 61 are power supplies for supplying a DC current, and are grounded via the chamber 10. Therefore, each discharge is generated using the potential difference between the targets T1, T2, T3 and the shield covers 18, 19, which are grounds. In order to protect the substrate 40 during pre-sputtering, a shutter (not shown) is provided between the substrate 40 and the targets T1 and T2.

By the way, as described above, behind the first and second targets T1 and T2, a magnetic field generating means comprising a permanent magnet and a core forming a closed loop is provided, and the magnetic flux is generated from the magnet at the center. It traverses the surface of the target T1 vertically and further passes through the space, and vertically traverses the surface of the target T2 installed on the outer periphery to reach the outer peripheral magnet.
The magnetic flux that has traversed the outer magnet passes through the inside of the core 17 made of a ferromagnetic material, reaches the inner magnet, and forms a closed loop. By forming a closed loop in this way, it is possible to form a magnetic field that vertically crosses the surfaces of the targets T1 and T2 and that crosses the vicinity of the surface of T3 substantially horizontally. Further, by forming the targets T1, T2, and T3 into a cylindrical endless shape, a similar magnetic field can be formed at any position of the target.

Therefore, when electric power is applied by introducing a gas such as Ar, a vertical electric field is formed on the surfaces of the targets T1 and T2. As described above, when the magnetic field and the electric field are formed in parallel, the electrons rotate so as to surround the magnetic field, collide with gas molecules, and are ionized to generate plasma. Since a negative voltage is applied from the DC power supply to the targets T1 and T2, the ionized gas molecules are removed from the targets T1 and T2.
Attraction is accelerated to T2, and opposing sputtering occurs, which collides with the target and repels the target material. At the same time, a negative voltage is applied to the target T3 from the DC power supply, and the electric field and the magnetic field are substantially orthogonal. The magnetron moves to generate magnetron sputter. At this time, as described above, since the targets T1 and T2 have a cylindrical shape and the electric field and the magnetic field are formed perpendicularly and radially to the surfaces of the targets T1 and T2, unlike the conventional counter sputtering, the erosion occurs at the center of the target. Opposite sputtering occurs in the entire ring target without concentrating the regions, and the effective use efficiency of the target can be improved.

Next, the difference between the characteristics of the opposed discharge and the magnetron discharge will be described. FIG. 7 shows a case where the first power supply means 60 supplies direct current only to the pair of targets T1 and T2 using the sputtering apparatus of the present invention, and a case where the second power supply means supplies power only to the target T3. 5 is a graph showing respective voltage-current curves (Vi curves) in the case of performing the above.

In the counter discharge, the voltage value increases as the current value increases. On the other hand, in the magnetron discharge, the voltage value increases only slightly even if the current value increases. Further, in the magnetron discharge, a phenomenon in which the increase in the voltage value with respect to the increase in the current value is smaller than that in the opposite discharge, and the voltage value does not increase even when a current of a certain current value or more is supplied. This is because the relationship between the current value and the voltage value in the magnetron discharge is limited by the amount of supplied gas, and the voltage value shows a limit even if the current is excessively supplied. As described above, the difference between the characteristics of both the opposed discharge and the magnetron discharge can be known by looking at the respective Vi curves.

At this time, the maximum magnetic flux density contributing to the opposing discharge between the targets T1 and T2 is equal to the maximum magnetic flux density contributing to the magnetron discharge parallel to the surface of the target T3 near the target T3. The impedance of the magnetron discharge is lower than that of the counter discharge. Further, the facing discharge is generated in the range of 800 to 1000 V by the sputtering apparatus of the present invention. The magnetron discharge is 400-600.
It occurs in the range of V. This indicates that the magnetron discharge occurs with a lower impedance than the counter discharge.

As described above, since the magnetron discharge is generated at a lower impedance than the counter discharge, for example, when the power supplied to the counter discharge and the magnetron discharge is supplied in a state that is not electrically independent, the counter discharge is generated. Most of the power supplied to the power supply is consumed as power for generating magnetron discharge.

In order to make effective use of the supplied electric power, the sputtering apparatus of the present invention is provided with first and second electric power supply means 60 and 61 which are electrically independent from each other, and each of which comprises a first and a second target T1. , T2 and the third target T3. As a result, both the opposing discharge and the magnetron discharge can be generated to the extent necessary for sputtering,
In addition, both discharges can be controlled.

In the present invention, the targets T1, T
2, plasma is generated in a space surrounded by T3, so that erosion at the center of the target, that is, a change in the shape of the target and an increase in the plasma confinement efficiency, enables high-efficiency and high-power input, or And the substrate can be closer together,
It is possible to increase the film forming speed of the substrate.

Further, according to the present invention, as described above, it is possible to form a film with a short distance between the target and the substrate by increasing the plasma confinement efficiency. The ratio can increase the former in the composition ratio of sputtered particles flying from near the substrate on the sputtered surface to sputtered particles flying from a portion far from the substrate on the sputtered surface. Therefore, even if the sputtering conditions are changed or the material of the target is changed, there is no large difference in the emission angle when the sputtered particles are emitted from the sputtering surface, and a thin film having a uniform thickness distribution can be formed on the substrate. .

Further, even in a low vacuum region where it is impossible to maintain the discharge by the magnetron discharge alone, it is possible to perform sputtering by increasing the plasma confinement efficiency, and to form a high-quality film with less contamination of impurities such as sputter gas. Become. Since the target T1 and the target T2 have different areas to be sputtered, it is preferable to make the thickness of the inner target T1 having a small area larger than T2 in order to make the target life the same.

The shape of the first target of the present invention is preferably determined so that the density distribution of the generated electric field does not become non-uniform, and more specifically, it is preferable that the first target has a non-terminal shape. Further, in addition to the above-described cylindrical shape as a specific example of the non-terminal shape, a rectangular shape in which the lengths of the long side and the short side are different and the corners are rounded may be used as shown in FIG.

The first and second targets T1 and T2 and the third target T3 are formed in a rectangular shape with corners as shown in FIG. 3 so that the long direction of the target T1 is set to a size perpendicular to the substrate transport direction. It is preferable to optimize it. In addition, a uniform thin film can be formed over a large area by arranging a plurality of composite opposed targets in the substrate transport direction, or by arranging a plurality of cylindrical composite opposed targets in the peripheral portion compared to the central portion of the substrate. Can be.

Alternatively, the first target may have an endless polygonal shape, and the second and third targets may have an endless polygonal shape in accordance with the first target.

In the present invention, as shown in FIG. 1, the power supply means 60 supplies power to both the pair of targets T1 and T2, and two power supply means 60 are provided (not shown). Power supply means 60 supplies power only to the target T1, and the other power supply means 60 electrically independent of power supplied only to the target T1 supplies power only to T2. Is also good.

The target T used in the present invention is
It is preferable that all of T1, T2, and T3 are the same member. The target used at this time is aluminum, titanium, tungsten, chromium, copper, molybdenum,
Metals composed of a single material such as platinum and tantalum, alloys composed of aluminum, silicon and copper, semiconductors such as boron and phosphorus-doped silicon, or rare earth metals, or ITO, silicon oxide, aluminum oxide, etc. Or an oxide containing aluminum nitride, titanium nitride, tungsten nitride, silicon nitride, or the like is preferably used.

The thin film formed by using the opposed magnetron composite sputtering apparatus of the present invention is preferably used as a semiconductor thin film constituting a semiconductor device, or an insulator thin film or a conductive thin film. Further, the semiconductor device can be used as a thin film transistor, an electroluminescent element, or the like. Further, it is also preferable to produce a photoelectric conversion element such as a solar cell using the thin film transistor having the thin film of the present invention.

(Second Embodiment) In a second embodiment, as shown in FIG.
1 and T2, and a power supply means 61, which is electrically independent of the power supply means 60,
3 is a form in which an AC electric field is supplied. At this time, the power supply means 60 and 61 are connected by a phase converter 70 to match the phase of the AC electric field to be supplied. The phase conversion device can arbitrarily control the phase of the AC electric field supplied to each of the pair of targets T1, T2 and T3. For example, the phase converter converts the phase of the AC electric field supplied to the target T3 to the pair of targets T1, T2. Can be shifted by 180 degrees with respect to the phase of the AC electric field supplied to the AC power supply. By shifting the phase of each AC electric field by 180 degrees in this manner, T3 can be maintained as an electrode of the opposite polarity to T1 and T2. As a result, by applying an alternating electric field to the pair of first and second targets and the ring-shaped third target so that the phases are different from each other and performing sputtering, the targets are alternately switched to the cathode and the anode. By canceling the excessive charges that accumulate each other, there is an effect of preventing an arc discharge that may occur when a DC electric field is supplied, and a stable discharge can be maintained for a long time.

Other points are the same as those shown in the first embodiment.

According to the present invention, one power supply means may supply DC power and the other power supply means may supply AC power. In this case, it is preferable to provide a control circuit (not shown) on the target supplying the DC electric field to prevent the DC electric field from being interfered by the AC electric field and causing an abnormal state, thereby preventing the occurrence of arc discharge.

(Third Embodiment) In the third embodiment, as shown in FIG. 5, power supply means 60 and 61 are high frequency (13.56 MHz) RF (Radio frequency).
Ency) It is preferable to provide a matching box 80 (not shown) that is a supply unit and matches the impedance between the RF supply unit and a target to be connected. Others are the same as in the second embodiment.

According to the present invention, one of the power supply means 60 and 61 is an RF supply means, and the power supplied by the other power supply means can be freely selected from AC or DC to be supplied.

In this embodiment, an insulator can be used as the pair of targets T1 and T2.

(Fourth Embodiment) The fourth embodiment is characterized in that the thin film forming step is performed by at least two or more steps. At this time, the thin film forming process is an embodiment in which a thin film is roughly formed in the first half of the process, and a final thin film forming process is performed in the second half of the process, that is, at the end stage of the thin film forming process, thereby completing a series of thin film forming processes. Other points are the same as those of the first to third embodiments.

Further, according to the present invention, the facing discharge and the magnetron discharge can be generated independently of each other. The step of forming a film only by discharging may be continued.

Alternatively, a thin film is roughly formed on the substrate by sputtering using only facing discharge in the first half of the thin film forming step, and then an extremely thin film is deposited on the surface of the roughly formed thin film by sputtering using magnetron discharge in the second half of the thin film forming step. Let it. Alternatively, sputtering by magnetron discharge may be performed in the first half of the process, and sputtering by counter discharge may be performed in the second half of the process.

In the fourth embodiment, the electric field supplied by the power supply means 60, 61 to the targets T1, T2, T3 may be a DC electric field, an AC electric field, or only one of them may be a DC electric field. May be.

Hereinafter, the above points will be specifically described.

Example 1 A film forming experiment was performed using the facing target sputtering apparatus of the present invention shown in FIGS. 1 to 3 and the sputtering apparatus described in the first embodiment. First, the substrate 40 has a thickness of 1.
A 1 mm, 300 mm x 300 mm size blue plate glass substrate is used. Copper (Cu) having a purity of 99.99% is used as a target material for the targets T1, T2, and T3, and an oval shape is formed in a direction perpendicular to the substrate transport direction. Of the outer target T2 having a length of 320 mm and a thickness of 6 mm. A T2 target having a thickness of 12 mm was used, and a T3 target having a thickness of 6 mm was used. T
The height of each of the T1 cylindrical targets is 100 mm
The distance between the sputtering surfaces of the inner target T1 and the outer target T2 was set to 60 mm. At this time, the intensity of the magnetic field from the T1 sputtering surface in a direction substantially perpendicular to the T2 sputtering surface was 400 Oe.

The main conditions for sputtering are Ar
The gas pressure was 3 × 10 ⁻³ Torr, and the distance from the target end to the substrate was 30 mm. (If the distance from the target end to the substrate surface is shorter than 10 mm, heat
If the distance exceeds 60 mm, the film adheres to a wall surface other than the substrate, a transport driving system, and the like, and causes contamination and particles. Therefore, the distance between the substrate and the end of the target is preferably in the range of 10 mm to 60 mm. ). The substrate transfer speed is 21
0 mm / min, and the first and second power supply means 60 and 61
As a result, a DC electric field of 8 kW was applied to the first and second targets T1 and T2 as sputtering input power, and a DC electric field of 4 kW was applied to the third target T3.

A thin film made of copper was formed by sputtering on a glass substrate as described above. The thickness of the copper film formed under these conditions was about 1 μm, and the film thickness distribution in a 300 mm square substrate was measured. As a result, as shown in FIG.
Good results were obtained with an error within 0%.

Comparative Example 1 As a comparison with the above example, a similar film-forming experiment was performed using the conventional opposed target sputtering apparatus shown in FIG. 9 as the target material on the opposing targets t1 and t2.
6 mm thick copper (Cu) with a purity of 9.99% and 3
Using a rectangular target of 20 mm × 100 mm, the long direction of the target was oriented in a direction perpendicular to the direction of transport of the substrate, and the substrate passed through the long surface side. Also,
The distance between the targets is 100 mm, and t
The intensity of the magnetic field from the 1 sputter surface to the direction substantially perpendicular to the t2 sputter surface was 400 Oe as in the first embodiment. The main conditions of the sputtering were that the Ar gas pressure was 3 × 1
0 ^-3 Torr, and the distance from the target end to the substrate was 30 mm. The substrate transfer speed is 150
mm / min, and a sputter input power of 8 at t1 and t2.
A kW DC electric field was applied.

As described above, a thin film made of copper was formed on a glass substrate by a conventional method. The thickness of the copper film formed under these conditions was uniform in the transport direction.
However, it was found that the peripheral portion was thin in the direction perpendicular to the transport direction. As shown in FIG. 4, the thickness of the copper film is 300
The thickness was about 1 μm at the center of the mm □ substrate, and the film thickness distribution within the 300 mm □ substrate was measured, as shown in FIG.
The thickness distribution region of 10% was about 150 mm, which is about half of the substrate width of 300 mm.

Example 2 Next, a flattening film LC2040 manufactured by Sanyo Chemical Co., Ltd., which is a thermosetting resin used for forming a liquid crystal color filter, is spin-coated on a 1.1 mm thick glass substrate of 300 mm square by 1 μm. After baking, in the same manner as in Example 1 and Comparative Example 1, the target material was changed from copper to an AlSiCu alloy material, and the target was formed by using the conventional opposed target sputtering apparatus and the opposed target sputtering apparatus of the present invention, respectively. An experiment was conducted to form an AlSiCu alloy film in the same manner as in the above example, with the distance from the end of the substrate to the substrate being 30 mm. At this time, Wah is placed on the back side of the substrate.
A temp plate, which is a temperature measuring device based on color change manufactured by Company l, was attached, and the temperature rise of the substrate was measured.

As a result, when the film was formed by the facing target sputtering apparatus of the present invention, the substrate temperature from the first to the 100th was stable in the range of 110 ° C. to 121 ° C., and the film surface was particularly abnormal. Was not observed, whereas the film formed by the conventional opposed target sputtering apparatus was 1
The temperature increased from 115 ° C to 171 ° C by the 00th sheet, and tended to increase as the number of sheets increased.

Further, a flattening film L is formed on the 90th and subsequent substrates.
Wrinkles that appeared to be thermal damage of C2040 occurred on the film surface.

Example 3 Next, a sintered body of ITO (filling rate: 95%), which is a transparent conductive film material, was used for each of the targets T1, T2, and T3, and the sputtering apparatus described in the second embodiment was used.
A film forming experiment was performed in the same manner as in Example 1. As main sputtering conditions, 1.5% oxygen gas was mixed with Ar gas, the sputtering pressure was set to 3 × 10 ⁻³ Torr, and T
1, 40k so that the phases of T2 and T3 are shifted by 180 degrees
Hz alternating current electric field was applied to perform sputtering. At that time, a micro arc monitor manufactured by Landmark Technology Co. was installed, and the number of arc discharges was measured. As a result, 10
The number of arcs in the case of continuous film formation was 3 times.

This is presumably because T1, T2, and T3 alternate between the anode and the cathode, thereby canceling the charge causing the arc discharge.

As can be seen from this experiment, by applying an AC electric field so that the phases of T1, T2 and T3 are shifted, stable sputtering can be performed with a very small number of arc discharges.

Example 4 Using the composite facing target type sputtering apparatus of the present invention,
The targets T1, T2, and T3 are used up to the use limit (immediately before a hole is opened somewhere), and the targets t1 and t2 used in the comparative example are used up to the use limit, and their weights are measured. Usage efficiency [(weight before use-weight after use)
/ Weight before use], the target utilization efficiency by the conventional facing sputtering was about 20%. In contrast, the utilization efficiency of the target according to the present invention was about 43%.

[0068]

As described above, the present invention has the following effects.

(1) Incorporating the advantages of conventional counter sputtering, high-speed low-temperature sputtering can be performed, and the peripheral portion, which was impossible with conventional sputtering, can be efficiently sputtered. High sputter.

(2) The magnetic flux concentrates on the center of the target, and the efficiency of use of the target can be improved.

(3) Mass production can be easily performed.

(4) A portion having a good film thickness distribution can be set in a wide range, and a change with time can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view of a composite facing target sputtering apparatus showing a first embodiment of the present invention.

FIG. 2 is a front view of the composite facing target of the present invention.

FIG. 3 is a front view showing another configuration of the composite facing target of the present invention.

FIG. 4 is a cross-sectional view of a composite facing target sputtering apparatus according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional view of a composite facing target sputtering apparatus according to a third embodiment of the present invention.

FIG. 6 is a graph showing a film thickness distribution.

FIG. 7 shows the V- of each of the facing discharge and the magnetron discharge.
Graph showing i-curve

FIG. 8 is a view for explaining a conventional opposed target sputtering apparatus.

FIG. 9 is a view showing erosion after using a target when a conventional opposed target sputtering apparatus is used.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Vacuum chamber 20 Vacuum exhaust system 11, 12, 13, 14 Insulating member 55, 15, 16 Target holder T1, T2, T3, t1, t2 Target 17 Core for forming a closed magnetic path 18, 19 Shield cover 30 Gas introduction system 5, DESCRIPTION OF SYMBOLS 40 Substrate 6, 41 Substrate holding means 42 Substrate heating means 50 Substrate transfer system 60 First power supply means 61 Second power supply means 151, 161 Permanent magnet 154, 164 Cooling pipe 70 Phase shift converter 80 Matching box

Claims (17)

[Claims] 1. A method according to claim 1, wherein the first and second sputtered surfaces of the second target are formed so as to face a first sputtered surface of an endless outer wall surface of the first target. Opposing target arranging means for arranging a second target; and a third target arranging means such that a third sputter surface is located opposite to a space between the first sputter surface and the second sputter surface.
Target arranging means for arranging a target, a substrate holding member for arranging a substrate facing an opening of a space surrounded by the first target, the second target, and the third target; An opposing magnetron composite sputtering apparatus having a magnetic field generating means for generating a magnetic field in a direction perpendicular to the first and second sputtering surfaces, wherein an opposing discharge occurs on the sputtering surfaces of the first and second targets. A first power supply means for forming a magnet; and a second power supply means for supplying power independently of the first power supply means for forming a magnetron on the third sputtering surface of the third target. An opposed magnetron composite sputtering apparatus comprising: an electric field supply unit. 2. The apparatus according to claim 1, wherein said first target has a cylindrical shape. 3. The apparatus according to claim 1, wherein the first target has a rectangular shape with sharp corners. 4. The apparatus according to claim 1, wherein the first target has a polygonal shape. 5. The opposing magnetron composite according to claim 1, wherein at least two or more sets of target assemblies each including the first target, the second target, and the third target are arranged. Sputtering equipment. 6. The first and second sputter surfaces, each of which includes a non-terminal opposed wall surface of a second target, and a first sputter surface, which includes an endless external wall surface of a first target, are opposed to each other. Disposing the second target, disposing the third sputtering surface such that the third sputtering surface is located opposite to the space between the first sputtering surface and the second sputtering surface, A substrate is disposed so as to face an opening surrounded by the first target, the second target, and the third target, and a magnetic field is applied in a direction perpendicular to each of the first and second sputtering surfaces. In the applied state, the first power supply means supplies electric power to the sputter surfaces of the first and second targets to generate an opposing discharge, and the first target supplies the third target to the third sputter surface of the third target. 2 means for supplying power A method of forming a thin film on the substrate by supplying the generated magnetron discharge to form a thin film on the substrate. 7. The method according to claim 6, wherein the first target has a cylindrical shape. 8. The thin film forming method according to claim 6, wherein the first target has a rectangular shape with sharp corners. 9. The method according to claim 6, wherein the first target has a polygonal shape. 10. The thin film forming method according to claim 6, wherein at least one of said first power supply means and said second power supply means supplies a direct current. 11. The thin film forming method according to claim 6, wherein at least one of said first power supply means and said second power supply means supplies an alternating current. 12. The thin film forming method according to claim 6, wherein at least one of said first power supply means and said second power supply means supplies a high-frequency current. 13. The thin film formation according to claim 6, wherein a phase of an AC electric field different from a phase of an AC electric field supplied to the first target and the second target is supplied to the third target. Method. 14. The method according to claim 6, wherein the first, second, and third sputtering surfaces are the same member. 15. The method according to claim 14, wherein the member is any one selected from the group consisting of a metal, a semiconductor, an oxide, and a nitride. 16. The method according to claim 6, wherein a thin film forming a semiconductor device is formed. 17. The method according to claim 16, wherein the semiconductor device is any one of a thin film transistor and an electroluminescence element.