CN117219482B - Current detection device and scanning electron microscope - Google Patents
Current detection device and scanning electron microscope Download PDFInfo
- Publication number
- CN117219482B CN117219482B CN202311467263.9A CN202311467263A CN117219482B CN 117219482 B CN117219482 B CN 117219482B CN 202311467263 A CN202311467263 A CN 202311467263A CN 117219482 B CN117219482 B CN 117219482B
- Authority
- CN
- China
- Prior art keywords
- voltage
- capacitor
- signal
- module
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 108
- 238000002955 isolation Methods 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims description 115
- 230000003287 optical effect Effects 0.000 claims description 11
- 101000746134 Homo sapiens DNA endonuclease RBBP8 Proteins 0.000 claims description 2
- 101000969031 Homo sapiens Nuclear protein 1 Proteins 0.000 claims description 2
- 102100021133 Nuclear protein 1 Human genes 0.000 claims description 2
- 239000000523 sample Substances 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 1
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Abstract
The invention discloses a current detection device and a scanning electron microscope, comprising: a detector head for detecting target charged particles to output a current; the high-voltage side sub-device comprises a high-voltage module, a signal detection module and an isolation power module, wherein the high-voltage module is respectively connected with the detection head and the isolation power module to respectively provide a first voltage for the detection head and the isolation power module; the low-voltage side sub-device comprises a signal acquisition module, wherein the signal acquisition module is connected with the signal detection module and is used for removing the reference of the detection signal and outputting the detection signal after the reference is removed to external equipment for processing. The device can apply high voltage to the probe head to attract particles, and meanwhile, the high-voltage side sub-device and the low-voltage side sub-device are ensured to work under normal voltage.
Description
Technical Field
The present invention relates to the field of electron microscope technologies, and in particular, to a current detection device and a scanning electron microscope.
Background
The emission beam of the scanning electron microscope is high-speed electron flow (electrons have larger energy), the receiving end of the sample stage can directly detect the electrons, the energy of the electrons is very weak for electrons reflected/excited by the surface of the sample, the electrons are difficult to actively reach the detection head, 100-500V or even higher voltage can be added at the front end of the detection head for collecting the electrons reflected/excited by the surface of the sample (representing the characteristics of the sample) as much as possible, the voltage is used for attracting/capturing space electrons, the signal acquisition end is usually a low-voltage circuit below 12V, and the voltage level between the two is not compatible.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, the object of the present invention is to propose a current detection device and a scanning electron microscope which applies a high voltage to the detector head to attract particles while ensuring that the high voltage side sub-device and the low voltage side sub-device operate at normal voltages.
To achieve the above object, an embodiment of a first aspect of the present invention provides a current detection device, including: a detector head for detecting target charged particles to output a current; the high-voltage side sub-device comprises a high-voltage module, a signal detection module and an isolation power supply module, wherein the high-voltage module is respectively connected with the detection head and the isolation power supply module to respectively provide first voltage for the detection head and the isolation power supply module, the isolation power supply module is connected with the signal detection module to provide second voltage for the signal detection module, and the signal detection module is connected with the detection head to detect current output by the detection head and output a detection signal, the reference of the second voltage is the first voltage, the reference of the detection signal is the first voltage, and the electric polarity of the first voltage is opposite to that of the target charged particles; the low-voltage side sub-device comprises a signal acquisition module, wherein the signal acquisition module is connected with the signal detection module and is used for removing the reference of the detection signal and outputting the detection signal after the reference is removed to external equipment for processing.
In addition, the current detection device according to the above embodiment of the present invention may further have the following additional technical features:
according to one embodiment of the invention, the signal detection module comprises: the transimpedance amplifier is connected with the detection head and used for converting the current output by the detection head into high voltage and outputting a high-voltage signal; the linear optical coupler is connected with the transimpedance amplifier and the signal acquisition module respectively and is used for converting the high-voltage signal into a current signal and outputting the current signal to the signal acquisition module as the detection signal.
According to one embodiment of the present invention, the signal detection module further includes a first bias circuit, which is connected to the transimpedance amplifier and the linear optocoupler, respectively, and is configured to provide a bias voltage to the linear optocoupler so that the high-voltage signal is always higher than the reference.
According to one embodiment of the invention, the first bias circuit comprises a first power supply chip, a first operational amplifier, first to third resistors, and first to third capacitors; the input end of the first power chip is connected with a first preset voltage and is connected with the first end of the third capacitor, the second end of the third capacitor is connected with the grounding end of the first power chip and is connected with the first voltage, the output end of the first power chip is connected with the first end of the second capacitor and the first end of the first resistor respectively, the second end of the second capacitor is connected with the first voltage, the second end of the first resistor is connected with the first end of the first capacitor, the inverting input end of the first operational amplifier, the first end of the third resistor and the cathode of the first photodiode in the linear optical coupler are connected respectively, the second end of the first capacitor is connected with the first end of the second resistor and the output end of the first operational amplifier respectively, the second end of the second resistor is connected with the cathode of the LED diode in the linear optical amplifier, the second end of the third resistor is connected with the transimpedance amplifier respectively, the inverting input end of the first photodiode is connected with the first voltage, the positive electrode of the first photodiode is connected with the positive electrode of the first optical amplifier, and the positive electrode of the first amplifier is connected with the positive electrode of the first photodiode.
According to one embodiment of the present invention, the signal acquisition module includes a signal pickup circuit connected to the linear optocoupler for converting the current signal output from the linear optocoupler into a low voltage signal.
According to one embodiment of the invention, the signal pickup circuit comprises a second power chip, a second operational amplifier, a fourth resistor, a fifth resistor, and fourth to sixth capacitors; the input end of the second power chip is connected with a second preset voltage and is connected with the first end of a fifth capacitor, the second end of the fifth capacitor is connected with the grounding end of the second power chip and is connected with the first ground, the output end of the second power chip is respectively connected with the first end of the fourth capacitor and the first end of the fourth resistor, the second end of the fourth capacitor is connected with the first ground, the second end of the fourth resistor is respectively connected with the first end of the fifth resistor, the first end of the sixth capacitor and the inverting input end of the second operational amplifier, and is connected with the cathode of the second photodiode, the non-inverting input end of the second operational amplifier is connected with the anode of the second photodiode and is connected with the first ground, the second end of the fifth resistor is respectively connected with the second end of the sixth capacitor and the output end of the second operational amplifier, and the output end of the second operational amplifier removes the detected reference signal.
According to one embodiment of the present invention, the signal acquisition module further includes a second bias circuit, which is connected to the signal pickup circuit and to the external device, and is configured to perform bias adjustment on the detection signal from which the reference is removed, and output the detection signal from which the bias adjustment is performed to the external device.
According to one embodiment of the present invention, the signal acquisition module further includes a multiple gain amplifier, which is connected to the second bias circuit and to the external device, and is configured to amplify the bias-adjusted detection signal by a target multiple, and output the amplified detection signal to the external device.
According to one embodiment of the invention, the low-voltage side sub-device further comprises: the micro control unit is respectively connected with the signal acquisition module and the high-voltage module and used for respectively controlling the signal acquisition module and the high-voltage module; the power supply is respectively connected with the high-voltage module, the isolation power supply module, the signal acquisition module and the micro control unit, so as to provide a third voltage for the high-voltage module and the isolation power supply module and supply power for the signal acquisition module and the micro control unit, wherein the third voltage, the power supply voltage of the signal acquisition module and the power supply voltage of the micro control unit are smaller than the first voltage.
According to one embodiment of the invention, the isolated power module comprises: isolating the power chip, the seventh capacitor, the thirteenth capacitor, the first inductor and the third inductor; the first positive input end of the isolation power chip is respectively connected with the second positive input end, the first end of the second inductor and the first end of the ninth capacitor, the second end of the second inductor is respectively connected with the first end of the seventh resistor and the first end of the eighth resistor, and is connected with the third voltage, the second end of the seventh capacitor is respectively connected with the second end of the eighth capacitor, the second end of the ninth capacitor, the first negative input end and the second negative input end of the isolation power chip, and is connected with the second ground, the positive output end of the isolation power chip is connected with the first end of the first inductor, the second end of the first inductor is connected with the first end of the tenth capacitor and the first end of the twelfth capacitor respectively, and outputs the second voltage, the negative output end of the isolation power chip is connected with the first end of the third inductor, the second end of the third inductor is connected with the first end of the eleventh capacitor and the first end of the thirteenth capacitor respectively, and is connected with a third preset voltage, and the second end of the eleventh capacitor is connected with the second end of the tenth capacitor, the second end of the twelfth capacitor, the second end of the thirteenth capacitor, and COM1 and COM2 ends of the isolation power chip are connected with the first voltage respectively.
According to one embodiment of the invention, the high-voltage module comprises a high-voltage boost chip, a fourteenth capacitor and a sixteenth capacitor; the input end of the high-voltage boosting chip is respectively connected with the first end of the fourteenth capacitor and the first end of the fifteenth capacitor, and is connected with the third voltage, the second end of the fourteenth capacitor and the second end of the fifteenth capacitor are connected with the second ground, the output end of the high-voltage boosting chip outputs the first voltage and is connected with the first end of the sixteenth capacitor, the second end of the sixteenth capacitor is connected with the first grounding end and the second grounding end of the high-voltage boosting chip, and is connected with the second ground in parallel, and the control end of the high-voltage boosting chip is connected with the micro control unit.
In order to achieve the above object, a second aspect of the present invention provides a scanning electron microscope including the above current detecting device.
The current detection device and the scanning electron microscope can apply high voltage to the detection head to attract particles, and meanwhile, the high-voltage side sub-device and the low-voltage side sub-device can work under normal voltage.
Drawings
FIG. 1 is a block diagram of a current sensing apparatus according to one embodiment of the present invention;
FIG. 2 is a block diagram of a current detecting device according to another embodiment of the present invention;
FIG. 3 is a circuit topology of a transimpedance amplifier of one embodiment of the present invention;
FIG. 4 is a circuit topology of a transimpedance amplifier, first biasing circuit and linear optocoupler connection according to one embodiment of the present invention;
FIG. 5 is a circuit topology of an isolated power module according to one embodiment of the invention;
FIG. 6 is a circuit topology of a high voltage module according to one embodiment of the invention;
FIG. 7 is a circuit topology of a signal pickup circuit according to one embodiment of the present invention;
fig. 8 is a block diagram of a scanning electron microscope according to an embodiment of the present invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
The current detecting device and the scanning electron microscope of the embodiment of the present invention are described below with reference to the drawings.
Fig. 1 is a block diagram showing a structure of a current detecting device according to an embodiment of the present invention.
As shown in fig. 1, the current detection apparatus 100 includes:
a detector head 101 for detecting target charged particles to output a current; the high voltage side sub-device 102 comprises a high voltage module 1021, a signal detection module 1022 and an isolation power supply module 1023, wherein the high voltage module 1021 is respectively connected with the detection head 101 and the isolation power supply module 1023 to respectively provide a first voltage HGND for the detection head 101 and the isolation power supply module 1023, the isolation power supply module 1023 is connected with the signal detection module 1022 to provide a second voltage VCCA for the signal detection module 1022, the signal detection module 1022 is connected with the detection head 101 to detect the current output by the detection head 101 and output a detection signal out, the reference of the second voltage VCCA is the first voltage HGND, the reference of the detection signal out is the first voltage HGND, and the electric polarity of the first voltage HGND is opposite to that of the target charged particles; the low voltage side sub-device 103 comprises a signal acquisition module 1031, wherein the signal acquisition module 1031 is connected with the signal detection module 1022 and is used for removing the reference of the detection signal out and outputting the detection signal out after the reference is removed to an external device for processing. The first voltage HGND has an electric polarity opposite to that of the target charged particles, i.e.: the target charged particles are positively charged, and the first voltage HGND is a negative voltage; the target charged particles are negatively charged and the first voltage HGND is a positive voltage.
Specifically, the first voltage HGND may be 500V, and the second voltage VCCA and the detection signal out may be voltage signals based on 500V, for example, 500-505V.
The current detection device provided by the embodiment of the invention can apply high voltage to the detection head to attract target charged particles, and simultaneously ensure that the high-voltage side sub-device and the low-voltage side sub-device work under normal voltage.
In some embodiments, as shown in fig. 2, the signal detection module 1022 includes: a transimpedance amplifier 201 and a linear optocoupler 202; the transimpedance amplifier 201 is connected with the detection head 101 and is used for converting the current output by the detection head 101 into high voltage and outputting a high-voltage signal; the linear optocoupler 202, the linear optocoupler 202 is connected to the transimpedance amplifier 201 and the signal acquisition module 1031, respectively, for converting the high-voltage signal into a current signal, and outputting the current signal as a detection signal out to the signal acquisition module 1031.
Specifically, the transimpedance amplifier 201 and the linear optocoupler 202 are connected to a high-voltage module 1021, respectively, and the transimpedance amplifier 201 outputs a voltage signal with reference to 500V, for example, 500 to 505V. As shown in FIG. 3, the transimpedance amplifier 201 has Iin connected to the probe 101 and Vout output to downstream circuitry.
In some embodiments, as shown in fig. 2, the signal detection module 1022 further includes a first bias circuit 203, where the first bias circuit 203 is connected to the transimpedance amplifier 201 and the linear optocoupler 202, respectively, for providing a bias voltage to the linear optocoupler 202 such that the high voltage signal is always above the reference.
In some embodiments, as shown in fig. 4, the first bias circuit 203 includes a first power supply chip 2031, a first operational amplifier 2032, first to third resistors R1 to R3, and first to third capacitors C1 to C3; the input end Vin1 of the first power chip 2031 is connected to a first preset voltage VCC and is connected to a first end of a third capacitor C3, a second end of the third capacitor C3 is connected to a ground end GND1 of the first power chip 2031 and is connected to a first voltage HGND, an output end Vout1 of the first power chip 2031 is connected to a first end of a second capacitor C2 and a first end of a first resistor R1 respectively, a second end of the second capacitor C2 is connected to the first voltage HGND, a second end of the first resistor R1 is connected to a first end of the first capacitor C1, an inverting input end of the first operational amplifier 2032, a first end of the third resistor R3 and a cathode of a first photodiode D1 in the linear optical coupler 202 are connected respectively, a second end of the first capacitor C1 is connected to a first end of the second resistor R2 and an output end of the first operational amplifier 2032 respectively, a second end of the second resistor R2 is connected to a cathode of an LED diode D2 in the linear optical coupler 202, a second end of the third resistor R3 is connected to the first end of the first resistor 2032 and the anode amplifier 1031 is connected to the first voltage D2, and the positive electrode of the first photodiode D2 is connected to the first photodiode 1031. The linear optocoupler 202 has interfaces 1 to 8, a cathode connection interface 1 and an anode connection interface 2 of the led diode D2, a cathode connection interface 3 and an anode connection interface 4 of the first photodiode D1, and a cathode connection interface 6 and an anode connection interface 5 of the second photodiode D3.
Specifically, in some application scenarios, for example: the sample is subjected to electrons reflected/excited by electron beam impact or excited ions and needs to be detected; the charged particles reflected/excited by the sample strike the probe head, which causes loss of the charged particles of the probe head 101 itself, which needs to be detected; when using a focused ion beam scanning electron microscope, positively charged ions reflected from the sample need to be detected.
Thus, the target charged particles may be charged particles emitted or reflected by the sample, or charged particles that are lost by the detector head due to the charged particles emitted or reflected by the sample. The charged particles that cause the detector head 101 to lose charged particles are distinguished from charged particles detected by the detector head 101 by: the charge change of the detector head 101 caused by the charged particles detected by the detector head 101 is equal (i.e., 1 electron detected by the detector head may generate a charge change of 1 electron), resulting in unequal charge change of the detector head 101 caused by the charged particles of the detector head 101 losing charged particles (i.e., 1 electron hitting the detector head 101 may cause the detector head 101 to generate a charge change of multiple electrons).
The linear optocoupler 202 can only receive the sink current, and the current cannot be supplied to the outside, so that the related art detection device can only detect the unipolar current, and bipolar detection cannot be realized. For this reason, in the current detection device 100 of the present invention, the first bias circuit 203 is added to the high-voltage side sub-device 102, so as to provide the pull/fill current for the linear optocoupler 202 during bipolar detection, so that the linear optocoupler 202 can output an effective current signal corresponding to the detected particle.
In this embodiment, the first power chip 2031 may be a reference voltage power chip, where the first resistor R1, the second resistor R2, and the third resistor R3 are used to adjust the magnitude of the bias current, and the resistance value needs to be selected to be able to meet the current detection range and the linear segment requirement of the linear optocoupler 202; the capacitor C1 is used to adjust the bandwidth of the detection signal out.
In some embodiments, as shown in fig. 5, the isolated power module 1023 includes: the power supply chip 501, the seventh capacitor C7 to the thirteenth capacitor C13, the first inductor L1 to the third inductor L3 are isolated; the first positive input end +Vin1 of the isolation power chip 501 is respectively connected with the second positive input end +Vin2, the first end of the second inductor L2 and the first end of the ninth capacitor C9, the second end of the second inductor L2 is respectively connected with the first end of the seventh resistor R7 and the first end of the eighth resistor R8, and is connected with the third voltage Vp, the second end of the seventh capacitor C7 is respectively connected with the second end of the eighth capacitor C8, the second end of the ninth capacitor C9, the first negative input end-Vin and the second negative input end-Vin 2 of the isolation power chip 501 are respectively connected, and are connected with the second ground PGND, the positive output end +Vout of the isolation power chip 501 is respectively connected with the first end of the first inductor L1, the second end of the first inductor L1 is respectively connected with the first end of the tenth capacitor C10 and the first end of the twelfth capacitor C12, and outputs the second voltage VCCA, the negative output end-Vout of the isolation power chip 501 is connected with the first end of the eighth capacitor C8, the first end of the second end of the eleventh capacitor C11 is respectively connected with the first end of the thirteenth capacitor C13, and the second end of the thirteenth capacitor C13 is connected with the second end of the thirteenth capacitor C13, and the thirteenth capacitor C13 is connected with the first end of the thirteenth capacitor C13 and is connected with the first end of the thirteenth capacitor C13. The capacitors C7 to C13 and the inductors L1 to L3 are used for filtering.
In some embodiments, as shown in fig. 6, the high voltage module 1021 includes a high voltage boost chip 601, a fourteenth capacitor C14 through a sixteenth capacitor C16; the input terminal Vin3 of the high-voltage boost chip 601 is connected to the first terminal of the fourteenth capacitor C14 and the first terminal of the fifteenth capacitor C15, respectively, and is connected to the third voltage Vp, the second terminal of the fourteenth capacitor C14 and the second terminal of the fifteenth capacitor C15 are connected to the second ground PGND, the output terminal HV-out of the high-voltage boost chip 601 outputs the first voltage HGND and is connected to the first terminal of the sixteenth capacitor C16, the second terminal of the sixteenth capacitor C16 is connected to the first ground GND2 and the second ground HV-GND of the high-voltage boost chip 601, and is connected to the second ground PGND, and the control terminals Vp-in, vmon and hpower_ls_sw of the high-voltage boost chip 601 are connected to the micro control unit 1032. The fourteenth capacitor C14 to the sixteenth capacitor C16 are used for filtering, and the sixteenth capacitor C16 may be a high voltage capacitor.
In some embodiments, as shown in fig. 2, the signal acquisition module 1031 includes a signal pickup circuit 301, where the signal pickup circuit 301 is connected to the linear optocoupler 202 for converting the current signal output by the linear optocoupler 202 into a low voltage signal. In this embodiment, the electrical signal changes from the high voltage signal of the transimpedance amplifier 201 to the current signal of the linear optocoupler 202 and from the current signal of the linear optocoupler 202 to the low voltage signal of the signal pickup circuit 301, so that the signal pickup module 1031, which can only withstand the low voltage, processes the picked-up signal.
In some embodiments, as shown in fig. 7, the signal pickup circuit 301 includes a second power supply chip 3011, a second operational amplifier 3012, a fourth resistor R4, a fifth resistor R5, and fourth to sixth capacitances C4 to C6; the input end Vin4 of the second power chip 3011 is connected to a second preset voltage VDD and is connected to the first end of the fifth capacitor C5, the second end of the fifth capacitor C5 is connected to the ground end GND3 of the second power chip 3011 and is connected to the first ground GND, the output end Vout2 of the second power chip 3011 is connected to the first end of the fourth capacitor C4 and the first end of the fourth resistor R4, the second end of the fourth resistor R4 is connected to the first end of the fifth resistor R5, the first end of the sixth capacitor C6 and the inverting input end of the second operational amplifier 3012 are connected to the cathode of the second photodiode D3, the positive input end of the second operational amplifier 3012 is connected to the anode of the second photodiode D3 and is connected to the first ground GND, the second end of the fifth resistor R5 is connected to the second end of the sixth capacitor R6 and the output end of the second operational amplifier 3012, respectively, and the output reference signal out of the second operational amplifier 3012 is removed.
Specifically, the detection signal out after the reference is removed may be 0 to 5V. The values of the fourth resistor R4 and the fifth resistor R5 and the first resistor R1 and the third resistor R3 are kept consistent so as to be 1: the detection signal out is picked up 1-ground, and the sixth capacitor C6 is used to adjust the bandwidth of the detection signal out. The second power supply chip 3011 may be a reference voltage power supply chip.
In some embodiments, as shown in fig. 2, the signal acquisition module 1031 further includes a second bias circuit 302, where the second bias circuit 302 is connected to the signal pickup circuit 301 and to an external device, and is configured to perform bias adjustment on the detection signal out after the reference is removed, and output the detection signal out after the bias adjustment to the external device. The second bias circuit 302 is configured to bias-adjust an error such as zero bias of the detection signal out.
In some embodiments, as shown in fig. 2, the signal acquisition module 1031 further includes a multiple gain amplifier 303, where the multiple gain amplifier 303 is connected to the second bias circuit 302 and to an external device, and is configured to amplify the bias-adjusted detection signal out by a target multiple, and output the amplified detection signal out to the external device. The multiple gain amplifier 303 is used for amplifying signals with different intensities by different multiples (measuring range adjustment), so as to ensure the accuracy of the detection signal out.
In some embodiments, as shown in fig. 2, the low-side subassembly 103 further includes: a micro control unit 1032 and a power supply 1033; the micro control unit 1032 is connected with the signal acquisition module 1031 and the high-voltage module 1021 respectively and is used for controlling the signal acquisition module 1031 and the high-voltage module 1021 respectively; the power supply 1033 is connected to the high voltage module 1021, the isolated power module 1023, the signal acquisition module 1031 and the micro control unit 1032, respectively, to provide a third voltage Vp to the high voltage module 1021 and the isolated power module 1023 and to supply power to the signal acquisition module 1031 and the micro control unit 1032, wherein the third voltage Vp, the power supply Voltage (VDD) of the signal acquisition module 1031 and the power supply Voltage (VDD) of the micro control unit 1032 are smaller than the first voltage HGND.
In summary, in the current detection device of the embodiment of the invention, the isolation power module, the high-voltage module and the linear optical coupler form the isolation and transmission of signals at the high-voltage side and the low-voltage side together, so that high voltage can be applied to the detection head to attract particles, and meanwhile, the high-voltage side sub-device and the low-voltage side sub-device are ensured to work under normal voltage; a first bias circuit is added to the high-voltage side sub-device for providing a pull/sink current to the linear optocoupler for bipolar detection.
Fig. 8 is a block diagram of a scanning electron microscope according to an embodiment of the present invention.
As shown in fig. 8, the scanning electron microscope 800 includes: the current detection device 100 described above.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (12)
1. A current detection device, comprising:
a detector head for detecting target charged particles to output a current;
the high-voltage side sub-device comprises a high-voltage module, a signal detection module and an isolation power supply module, wherein the high-voltage module is respectively connected with the detection head and the isolation power supply module to respectively provide first voltage for the detection head and the isolation power supply module, the isolation power supply module is connected with the signal detection module to provide second voltage for the signal detection module, and the signal detection module is connected with the detection head to detect current output by the detection head and output a detection signal, the reference of the second voltage is the first voltage, the reference of the detection signal is the first voltage, and the electric polarity of the first voltage is opposite to that of the target charged particles;
the low-voltage side sub-device comprises a signal acquisition module, wherein the signal acquisition module is connected with the signal detection module and is used for removing the reference of the detection signal and outputting the detection signal after the reference is removed to external equipment for processing.
2. The current detection apparatus according to claim 1, wherein the signal detection module includes:
the transimpedance amplifier is connected with the detection head and used for converting the current output by the detection head into high voltage and outputting a high-voltage signal;
the linear optical coupler is connected with the transimpedance amplifier and the signal acquisition module respectively and is used for converting the high-voltage signal into a current signal and outputting the current signal to the signal acquisition module as the detection signal.
3. The current detection device according to claim 2, wherein the signal detection module further comprises a first bias circuit connected to the transimpedance amplifier and the linear optocoupler, respectively, for providing a bias voltage to the linear optocoupler such that the high voltage signal is always higher than the reference.
4. The current detecting apparatus according to claim 3, wherein the first bias circuit includes a first power supply chip, a first operational amplifier, first to third resistors, first to third capacitors;
the input end of the first power chip is connected with a first preset voltage and is connected with the first end of the third capacitor, the second end of the third capacitor is connected with the grounding end of the first power chip and is connected with the first voltage, the output end of the first power chip is connected with the first end of the second capacitor and the first end of the first resistor respectively, the second end of the second capacitor is connected with the first voltage, the second end of the first resistor is connected with the first end of the first capacitor, the inverting input end of the first operational amplifier, the first end of the third resistor and the cathode of the first photodiode in the linear optical coupler are connected respectively, the second end of the first capacitor is connected with the first end of the second resistor and the output end of the first operational amplifier respectively, the second end of the second resistor is connected with the cathode of the LED diode in the linear optical amplifier, the second end of the third resistor is connected with the transimpedance amplifier respectively, the inverting input end of the first photodiode is connected with the first voltage, the positive electrode of the first photodiode is connected with the positive electrode of the first optical amplifier, and the positive electrode of the first amplifier is connected with the positive electrode of the first photodiode.
5. The current detection device of claim 4, wherein the signal acquisition module comprises a signal pickup circuit coupled to the linear optocoupler for converting the current signal output by the linear optocoupler to a low voltage signal.
6. The current detecting apparatus according to claim 5, wherein the signal pickup circuit includes a second power supply chip, a second operational amplifier, a fourth resistor, a fifth resistor, and fourth to sixth capacitors;
the input end of the second power chip is connected with a second preset voltage and is connected with the first end of a fifth capacitor, the second end of the fifth capacitor is connected with the grounding end of the second power chip and is connected with the first ground, the output end of the second power chip is respectively connected with the first end of the fourth capacitor and the first end of the fourth resistor, the second end of the fourth capacitor is connected with the first ground, the second end of the fourth resistor is respectively connected with the first end of the fifth resistor, the first end of the sixth capacitor and the inverting input end of the second operational amplifier, and is connected with the cathode of the second photodiode, the non-inverting input end of the second operational amplifier is connected with the anode of the second photodiode and is connected with the first ground, the second end of the fifth resistor is respectively connected with the second end of the sixth capacitor and the output end of the second operational amplifier, and the output end of the second operational amplifier removes the detected reference signal.
7. The current detecting apparatus according to claim 6, wherein the signal collecting module further comprises a second bias circuit connected to the signal pickup circuit and to the external device for performing bias adjustment on the detection signal from which the reference is removed and outputting the detection signal to the external device after the bias adjustment.
8. The current detecting apparatus according to claim 7, wherein the signal collecting module further comprises a multiple gain amplifier connected to the second bias circuit and to the external device for amplifying the bias-adjusted detection signal by a target multiple and outputting the amplified detection signal to the external device.
9. The current detection device of claim 1, wherein the low side sub-device further comprises:
the micro control unit is respectively connected with the signal acquisition module and the high-voltage module and used for respectively controlling the signal acquisition module and the high-voltage module;
the power supply is respectively connected with the high-voltage module, the isolation power supply module, the signal acquisition module and the micro control unit, so as to provide a third voltage for the high-voltage module and the isolation power supply module and supply power for the signal acquisition module and the micro control unit, wherein the third voltage, the power supply voltage of the signal acquisition module and the power supply voltage of the micro control unit are smaller than the first voltage.
10. The current detection apparatus according to claim 9, wherein the isolated power supply module comprises: isolating the power chip, the seventh capacitor, the thirteenth capacitor, the first inductor and the third inductor;
the first positive input end of the isolation power chip is respectively connected with the second positive input end, the first end of the second inductor and the first end of the ninth capacitor, the second end of the second inductor is respectively connected with the first end of the seventh resistor and the first end of the eighth resistor, and is connected with the third voltage, the second end of the seventh capacitor is respectively connected with the second end of the eighth capacitor, the second end of the ninth capacitor, the first negative input end and the second negative input end of the isolation power chip, and is connected with the second ground, the positive output end of the isolation power chip is connected with the first end of the first inductor, the second end of the first inductor is connected with the first end of the tenth capacitor and the first end of the twelfth capacitor respectively, and outputs the second voltage, the negative output end of the isolation power chip is connected with the first end of the third inductor, the second end of the third inductor is connected with the first end of the eleventh capacitor and the first end of the thirteenth capacitor respectively, and is connected with a third preset voltage, and the second end of the eleventh capacitor is connected with the second end of the tenth capacitor, the second end of the twelfth capacitor, the second end of the thirteenth capacitor, and COM1 and COM2 ends of the isolation power chip are connected with the first voltage respectively.
11. The current detecting apparatus according to claim 10, wherein the high voltage module includes a high voltage boost chip, a fourteenth capacitor to a sixteenth capacitor;
the input end of the high-voltage boosting chip is respectively connected with the first end of the fourteenth capacitor and the first end of the fifteenth capacitor, and is connected with the third voltage, the second end of the fourteenth capacitor and the second end of the fifteenth capacitor are connected with the second ground, the output end of the high-voltage boosting chip outputs the first voltage and is connected with the first end of the sixteenth capacitor, the second end of the sixteenth capacitor is connected with the first grounding end and the second grounding end of the high-voltage boosting chip, and is connected with the second ground in parallel, and the control end of the high-voltage boosting chip is connected with the micro control unit.
12. A scanning electron microscope, comprising: a current sensing apparatus according to any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311467263.9A CN117219482B (en) | 2023-11-07 | 2023-11-07 | Current detection device and scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311467263.9A CN117219482B (en) | 2023-11-07 | 2023-11-07 | Current detection device and scanning electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117219482A CN117219482A (en) | 2023-12-12 |
| CN117219482B true CN117219482B (en) | 2024-01-26 |
Family
ID=89041100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311467263.9A Active CN117219482B (en) | 2023-11-07 | 2023-11-07 | Current detection device and scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117219482B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006185661A (en) * | 2004-12-27 | 2006-07-13 | Hitachi High-Technologies Corp | Charged particle beam device |
| CN101929965A (en) * | 2008-09-04 | 2010-12-29 | 汉民微测科技股份有限公司 | Charged particle detection device |
| JP2011138648A (en) * | 2009-12-28 | 2011-07-14 | Hitachi High-Technologies Corp | Charged particle beam device |
| CN107533944A (en) * | 2015-05-01 | 2018-01-02 | 株式会社日立高新技术 | Possesses the charged particle beam apparatus of ionic pump |
| CN216161686U (en) * | 2021-09-03 | 2022-04-01 | 聚束科技（北京）有限公司 | Electron microscope |
| CN115732298A (en) * | 2022-11-23 | 2023-03-03 | 国仪量子(合肥)技术有限公司 | Scanning electron microscope |
| CN116762152A (en) * | 2020-12-03 | 2023-09-15 | Asml荷兰有限公司 | Charged particle tool, calibration method, and inspection method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6979822B1 (en) * | 2002-09-18 | 2005-12-27 | Fei Company | Charged particle beam system |
| DE102011077635A1 (en) * | 2011-06-16 | 2012-12-20 | Carl Zeiss Nts Gmbh | High voltage power supply unit for a particle beam device |
| US9666404B2 (en) * | 2015-02-18 | 2017-05-30 | ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH | Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam |
| WO2017098573A1 (en) * | 2015-12-08 | 2017-06-15 | 株式会社日立ハイテクノロジーズ | High voltage power supply device and charged particle beam device |
-
2023
- 2023-11-07 CN CN202311467263.9A patent/CN117219482B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006185661A (en) * | 2004-12-27 | 2006-07-13 | Hitachi High-Technologies Corp | Charged particle beam device |
| CN101929965A (en) * | 2008-09-04 | 2010-12-29 | 汉民微测科技股份有限公司 | Charged particle detection device |
| JP2011138648A (en) * | 2009-12-28 | 2011-07-14 | Hitachi High-Technologies Corp | Charged particle beam device |
| CN107533944A (en) * | 2015-05-01 | 2018-01-02 | 株式会社日立高新技术 | Possesses the charged particle beam apparatus of ionic pump |
| CN116762152A (en) * | 2020-12-03 | 2023-09-15 | Asml荷兰有限公司 | Charged particle tool, calibration method, and inspection method |
| CN216161686U (en) * | 2021-09-03 | 2022-04-01 | 聚束科技（北京）有限公司 | Electron microscope |
| CN115732298A (en) * | 2022-11-23 | 2023-03-03 | 国仪量子(合肥)技术有限公司 | Scanning electron microscope |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117219482A (en) | 2023-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6877131B2 (en) | Current detection circuit | |
| JP6053603B2 (en) | Fine particle measurement system | |
| CN103471726B (en) | Fly burnt level ps pulsed laser and ns pulsed laser energy detection device | |
| JP4443167B2 (en) | Scanning electron microscope | |
| CN117219482B (en) | Current detection device and scanning electron microscope | |
| DE102019103407A1 (en) | TRANSIMPEDANZ AMPLIFIER WITH HIGH DYNAMIC RANGE | |
| CN106451393B (en) | Optical module | |
| CN218897209U (en) | Filter circuit and photoelectric conversion device | |
| CN2909284Y (en) | Optical signal preswitch and amplifying circuit for laser range finding | |
| CN107465349A (en) | A kind of low noise power supply system suitable for stream type cell analyzer | |
| CN106878640A (en) | A kind of EMCCD drive circuits | |
| CN112596044A (en) | Receiving device, laser radar and method for reducing interference signals of laser radar receiving device | |
| CN116519626B (en) | Signal detection circuit and system for terahertz spectrum and imaging measurement system | |
| DE3912506A1 (en) | Partial discharge sensor for testing transformer or generator - has adaptor for each test object, complementary bipolar transistor input stage, and amplifies and stretches partial discharge signal | |
| CN217360323U (en) | Electronic readout system for NICA-MPD electromagnetic energy meter | |
| CN110672917A (en) | Small-size voltage sensor circuit | |
| CN210380775U (en) | Charge sensitive preamplifier | |
| CN213341068U (en) | Power feedback acquisition circuit of solid laser and solid laser | |
| GB2605035A (en) | Charged particle gun and charged particle beam device | |
| Chuah1&2 et al. | A pixellated solid-state approach to secondary electron detection in the scanning electron microscope | |
| CN219247695U (en) | Standard source device | |
| US11899073B2 (en) | High-precision impedance measurement device | |
| JP2003151482A (en) | Electron detector | |
| CN215818450U (en) | Signal acquisition circuit | |
| CN219697610U (en) | Operational amplifier circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 230088 floor 1-4, zone a, building E2, phase II, innovation industrial park, No. 2800, innovation Avenue, high tech Zone, Hefei, Anhui Province Patentee after: Guoyi Quantum Technology (Hefei) Co.,Ltd. Country or region after: China Address before: 230088 floor 1-4, zone a, building E2, phase II, innovation industrial park, No. 2800, innovation Avenue, high tech Zone, Hefei, Anhui Province Patentee before: Guoyi Quantum (Hefei) Technology Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |