CN117214532A - Semiconductor material eddy current conductivity testing method capable of compensating temperature - Google Patents
Semiconductor material eddy current conductivity testing method capable of compensating temperature Download PDFInfo
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- CN117214532A CN117214532A CN202210023599.5A CN202210023599A CN117214532A CN 117214532 A CN117214532 A CN 117214532A CN 202210023599 A CN202210023599 A CN 202210023599A CN 117214532 A CN117214532 A CN 117214532A
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- 238000012360 testing method Methods 0.000 title claims abstract description 53
- 239000000463 material Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000005259 measurement Methods 0.000 claims abstract description 17
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 14
- 238000011088 calibration curve Methods 0.000 claims abstract description 13
- 239000000523 sample Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000010998 test method Methods 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
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Abstract
The invention discloses a semiconductor material eddy current conductivity testing method capable of compensating temperature, which comprises the following steps of S1, determining a current temperature calibration curve; s2, measuring the conductivity of a sample to be measured; the infrared temperature measurement system comprises an infrared CCD and a focusing mirror, wherein the central axes of the infrared CCD and the focusing mirror are coincident with the central axis of the driving coil, the infrared CCD and the focusing mirror are positioned outside a magnetic field influence area formed by the driving coil or the driven coil or the driving coil and the driven coil, and a light sensitive surface of the infrared CCD is positioned on a focal plane of the focusing mirror; the invention can obtain more accurate conductivity of the position to be measured and improve the measurement accuracy of the conductivity tester.
Description
Technical Field
The invention relates to the field of semiconductor material performance parameter detection, in particular to a semiconductor material eddy current conductivity testing method capable of compensating temperature.
Background
In the semiconductor manufacturing process, the performance of the end product depends on the performance of the semiconductor material, in order to ensure that the actions of the measuring process do not affect the quality of the end product, a non-contact measuring method is largely adopted for measuring the performance of the semiconductor material, the non-contact measuring method is non-destructive, and new defects are not introduced, particularly in the production process, the non-contact measuring method greatly improves the yield of the product. These non-contact measurement methods can be classified into electromagnetic induction methods, electrostatic induction methods, microwave methods, and the like in principle, and the measured amounts include conductivity, mobility, carrier concentration, lifetime, and the like of semiconductor materials.
The conductivity of the semiconductor material is a basic parameter of the semiconductor material, the common non-contact measurement method adopts an electromagnetic induction method to measure, when in measurement, an active electromagnetic coil and a passive electromagnetic coil are respectively placed on the upper surface and the lower surface of a sample made of the semiconductor material, alternating current is passed through the active electromagnetic coil, at the moment, the active electromagnetic coil generates a magnetic field, vortex-like current is induced on the surface of the semiconductor material due to the action of the alternating magnetic field of the active coil, the current is an eddy current, the eddy current in the semiconductor material generates own magnetic field to react with the active electromagnetic coil and the passive electromagnetic coil, at the moment, the magnetic field generated by the active electromagnetic coil and the magnetic field generated by the eddy current in the semiconductor material are superposed to pass through the passive electromagnetic coil, and the conductivity of the current position surface of the semiconductor material can be obtained by detecting the induction current in the passive electromagnetic coil. The conductivity of the semiconductor material and the induced current in the passive electromagnetic coil are calibrated by using the standard piece, a curve of the conductivity and the induced current is obtained, and the curve can be used for measuring the conductivity of the unknown semiconductor material. In the measuring process, in order to ensure the repeatability of measured data, multiple measurements are required to be carried out at the same position, and eddy currents generated during the multiple measurements generate a thermal effect on the surface of the semiconductor material, so that the temperature of the surface material is increased, the increase of the temperature of the material influences the measured value of the conductivity, and a new measuring error is introduced. Because each piece of product needs to measure a plurality of positions to acquire conductivity data of the whole product surface, if the time interval between two times of measurement data is increased to lighten the influence of temperature on the measurement data, the measurement time is greatly prolonged, the measurement efficiency is reduced, the production progress is influenced, and a new test method or structure is needed to be searched in order to solve the influence of heat change possibly generated in the measurement process on the conductivity.
Disclosure of Invention
The invention aims at solving at least one of the technical problems existing in the prior art, and provides a temperature-compensated semiconductor material eddy current conductivity testing method, which comprises the following steps:
s1, determining a current temperature calibration curve
Placing a standard silicon wafer with known conductivity on a test platform, directly moving or relatively moving a conductivity test probe comprising an active coil, a passive coil and an infrared temperature measurement system to a test position of the standard silicon wafer, passing alternating current through the active coil through a control system to obtain a current value in the passive coil, measuring a difference value between the standard temperature and the actual temperature by using the infrared temperature measurement system by changing the temperature of the standard silicon wafer, and establishing a calibration retrieval table comprising the relation among current, temperature and conductivity through test of expected times and repeated test of different expected times of the standard silicon wafer, and finally converting the calibration retrieval table into a temperature current calibration curve;
s2, measuring the conductivity of the sample to be measured
Placing the sample to be tested on the test platform, moving the conductivity test probe to a position to be tested of the sample to be tested, passing alternating current through the active coil, reading alternating current in the passive electromagnetic coil by using the control system, simultaneously reading a temperature value obtained by measurement of the infrared temperature measurement system, reading an alternating current value of the passive coil at a current position and a temperature value at the current position through expected times, processing data by using the control system, acquiring a conductivity value at a standard temperature at the current position according to the temperature current calibration curve and the calibration search table, and then moving or relatively moving the conductivity test probe to a next position to be tested of the sample to be tested, and repeating until data measurement of all positions is completed;
the infrared temperature measurement system comprises an infrared CCD and a focusing mirror, wherein the central axes of the infrared CCD and the focusing mirror are coincident with the central axis of the driving coil, the infrared CCD and the focusing mirror are positioned outside a magnetic field influence area formed by the driving coil or the driven coil or the driving coil and the driven coil, and a light sensitive surface of the infrared CCD is positioned on a focal plane of the focusing mirror.
According to the temperature-compensated semiconductor material eddy current conductivity testing method, the hollow part in the active electromagnetic coil structure can be utilized, the infrared temperature measuring probe is arranged at the position, outside the magnetic field influence area, above the hollow part or the hollow part, the calibration retrieval table containing the current, the temperature and the conductivity of the passive coil and the temperature current calibration curve are obtained through the standard silicon wafer, then the more accurate conductivity of the position to be tested is obtained by comparing the calibration retrieval table with the calibration curve in real time on line under the condition of the temperature current at the position to be tested of the sample to be tested, and the measurement precision of the conductivity tester is improved.
In addition, the temperature-compensated semiconductor material eddy current conductivity testing method disclosed by the invention has the following additional technical characteristics:
further, the active coil and the passive coil in the conductivity test probe are respectively positioned on the upper surface and the lower surface of the test silicon wafer, the distance from the end surfaces of the active coil and the passive coil to the upper surface and the lower surface of the silicon wafer is an expected value, and the active coil and the passive coil are coaxial.
Further, the active coil and the passive coil in the conductivity test probe are disposed in a base, and the active coil and the passive coil are coupled by wiring to a detection device, an analysis device.
Further, the driving coil and the driven coil are both circular cylindrical structure coils, the base is cylindrical structure which is in the same shape as the driving coil and the driven coil, and the driving coil is arranged on the lower side of the driven coil; the inner diameter and the outer diameter of the driving coil and the driven coil are the same, and the driving coil and the driven coil are fixedly arranged on the inner side of the base.
Further, the driven coil is arranged on the inner side of the driving coil, the outer diameter of the driven coil is matched with the inner diameter of the driving coil, and the driving coil is arranged on the inner side of the base.
Optionally, the probe further comprises an inner base, the inner base is of a cylindrical structure with an interlayer, the active coil is located between the inner wall of the outer base and the outer wall of the inner base, and the passive coil is placed in the interlayer of the inner base.
Preferably, the inner base is fixedly installed with the driven coil, and the inner base is movably installed on the inner side of the driving coil.
Further, the infrared CCD and the focusing lens in the infrared temperature measuring system are positioned above the driving coil and the driven coil which are of hollow structures, and the determination of the upper position needs to be determined through calculation and experiments, so that adverse effects of corresponding magnetic fields and the like are avoided, and the measurement problem caused by the adverse effects is avoided.
Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a prior art embodiment;
FIG. 2 is a schematic diagram of the infrared temperature measurement principle of the present invention;
FIG. 3 is a schematic diagram of an embodiment of a conductivity test probe according to the present invention;
FIG. 4 is a schematic diagram of a temperature current calibration curve according to the present invention;
FIG. 5 is a schematic view of the apparatus structure of the present invention;
FIG. 6 is a schematic diagram of a specific embodiment of a conductivity test probe according to the present invention;
FIG. 7 is a schematic view of another embodiment of a conductivity test probe according to the present invention;
wherein, 01 magnetic force lines, 02 active coil, 03 heat affected zone, 04 silicon ingot, 05 passive coil; i current, T temperature, A1 infrared CCD, A2 focusing mirror, A3 incident light; b2 distance detection component, B5 outer base, B6 inner base, and B7 wire.
Detailed Description
The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
According to an embodiment of the present invention, the present invention provides a temperature-compensated semiconductor material eddy current conductivity testing method, including:
s1, determining a current temperature calibration curve
Placing a standard silicon wafer with known conductivity on a test platform, directly moving or relatively moving a conductivity test probe comprising an active coil, a passive coil and an infrared temperature measurement system to a test position of the standard silicon wafer, passing alternating current through the active coil through a control system to obtain a current value in the passive coil, measuring a difference value between the standard temperature and the actual temperature by using the infrared temperature measurement system by changing the temperature of the standard silicon wafer, and establishing a calibration retrieval table comprising the relation among current, temperature and conductivity through test of expected times and repeated test of different expected times of the standard silicon wafer, and finally converting the calibration retrieval table into a temperature current calibration curve;
s2, measuring the conductivity of the sample to be measured
Placing the sample to be tested on the test platform, moving the conductivity test probe to a position to be tested of the sample to be tested, passing alternating current through the active coil, reading alternating current in the passive electromagnetic coil by using the control system, simultaneously reading a temperature value obtained by measurement of the infrared temperature measurement system, reading an alternating current value of the passive coil at a current position and a temperature value at the current position through expected times, processing data by using the control system, acquiring a conductivity value at a standard temperature at the current position according to the temperature current calibration curve and the calibration search table, and then moving or relatively moving the conductivity test probe to a next position to be tested of the sample to be tested, and repeating until data measurement of all positions is completed;
the infrared temperature measurement system comprises an infrared CCD and a focusing mirror, wherein the central axes of the infrared CCD and the focusing mirror are coincident with the central axis of the driving coil, the infrared CCD and the focusing mirror are positioned outside a magnetic field influence area formed by the driving coil or the driven coil or the driving coil and the driven coil, and a light sensitive surface of the infrared CCD is positioned on a focal plane of the focusing mirror.
According to some embodiments of the invention, the active coil and the passive coil are both circular cylindrical structure coils, the active coil and the passive coil in the conductivity test probe are respectively positioned on the upper surface and the lower surface of the test silicon wafer, the distance from the end surfaces of the active coil and the passive coil to the upper surface and the lower surface of the silicon wafer is an expected value, and the active coil and the passive coil are coaxial, as shown in fig. 1, 3 and 5.
Further, the active coil and the passive coil in the conductivity test probe are disposed in a base, and the active coil and the passive coil are coupled by wiring to a detection device, an analysis device.
Optionally, the driving coil and the driven coil are both circular cylindrical structure coils, the base is a cylindrical structure in the same shape as the driving coil and the driven coil, and the driving coil is installed on the lower side of the driven coil; the active coil and the passive coil have the same inner and outer diameters and are fixedly arranged on the inner side of the base, as shown in fig. 6.
Alternatively, the passive coil is disposed inside the active coil, the passive coil outer diameter mates with the active coil inner diameter, and the active coil is disposed inside the base, as shown in fig. 7.
Preferably, the conductivity test probe further comprises an inner base having a cylindrical structure with an interlayer, the active coil is located between the inner wall of the outer base and the outer wall of the inner base, and the passive coil is placed in the interlayer of the inner base.
Preferably, the inner base is fixedly installed with the driven coil, and the inner base is movably installed on the inner side of the driving coil.
According to some embodiments of the invention, the infrared CCD and the focusing mirror in the infrared thermometry system are located above the active coil and the passive coil having a hollow structure, as shown in fig. 3.
According to some embodiments of the invention, the conductivity test probe is provided with a distance detection component for detecting the distance between the bottom end of the conductivity test probe and the upper surface of the silicon ingot below. The use of the distance detection component can automatically perform back-end feedback, and can automatically adjust the distance between the whole probe and the surface of the silicon ingot.
Further, the distance detecting component is a non-contact displacement sensor.
Optionally, the distance detecting component is a laser position sensor.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A temperature-compensated semiconductor material eddy current conductivity test method, comprising:
s1, determining a current temperature calibration curve
Placing a standard silicon wafer with known conductivity on a test platform, directly moving or relatively moving a conductivity test probe comprising an active coil, a passive coil and an infrared temperature measurement system to a test position of the standard silicon wafer, passing alternating current through the active coil through a control system to obtain a current value in the passive coil, measuring a difference value between the standard temperature and the actual temperature by using the infrared temperature measurement system by changing the temperature of the standard silicon wafer, and establishing a calibration retrieval table comprising the relation among current, temperature and conductivity through test of expected times and repeated test of different expected times of the standard silicon wafer, and finally converting the calibration retrieval table into a temperature current calibration curve;
s2, measuring the conductivity of the sample to be measured
Placing the sample to be tested on the test platform, moving the conductivity test probe to a position to be tested of the sample to be tested, passing alternating current through the active coil, reading alternating current in the passive electromagnetic coil by using the control system, simultaneously reading a temperature value obtained by measurement of the infrared temperature measurement system, reading an alternating current value of the passive coil at a current position and a temperature value at the current position through expected times, processing data by using the control system, acquiring a conductivity value at a standard temperature at the current position according to the temperature current calibration curve and the calibration search table, and then moving or relatively moving the conductivity test probe to a next position to be tested of the sample to be tested, and repeating until data measurement of all positions is completed;
the infrared temperature measurement system comprises an infrared CCD and a focusing mirror, wherein the central axes of the infrared CCD and the focusing mirror are coincident with the central axis of the driving coil, the infrared CCD and the focusing mirror are positioned outside a magnetic field influence area formed by the driving coil or the driven coil or the driving coil and the driven coil, and a light sensitive surface of the infrared CCD is positioned on a focal plane of the focusing mirror.
2. The method for testing the eddy current conductivity of the semiconductor material capable of compensating for the temperature according to claim 1, wherein the active coil and the passive coil in the conductivity test probe are respectively positioned on the upper surface and the lower surface of the test silicon wafer, the distance from the end surfaces of the active coil and the passive coil to the upper surface and the lower surface of the silicon wafer is an expected value, and the active coil and the passive coil are coaxial.
3. The method for testing the eddy current conductivity of the semiconductor material capable of compensating for the temperature according to claim 1, wherein the active coil and the passive coil in the conductivity test probe are arranged in the same base and are positioned on the same side of the silicon wafer, and the active coil and the passive coil are connected with the detection equipment and the analysis equipment through lines.
4. The method for testing the eddy current conductivity of a semiconductor material capable of compensating for temperature according to claim 3, wherein the active coil and the passive coil are both circular cylindrical structure coils, the base is cylindrical structure having the same shape as the active coil and the passive coil, and the active coil is mounted on the lower side of the passive coil; the inner diameter and the outer diameter of the driving coil and the driven coil are the same, and the driving coil and the driven coil are fixedly arranged on the inner side of the base.
5. A method of testing the eddy current conductivity of a temperature compensated semiconductor material according to claim 3, wherein the passive coil is disposed inside the active coil, the passive coil having an outer diameter that matches the inner diameter of the active coil, the active coil being disposed inside the base.
6. The temperature-compensated semiconductor material eddy current conductivity test method as recited in claim 5, wherein the probe further comprises an inner base having a cylindrical configuration with an interlayer, the active coil being located between the inner wall of the outer base and the outer wall of the inner base, the passive coil being disposed in the interlayer of the inner base.
7. The method of claim 6, wherein the inner base is fixedly mounted to the driven coil, and the inner base is movably mounted inside the driving coil.
8. The method of claim 1, wherein the infrared CCD and the focusing mirror are located above the active coil and the passive coil having a hollow structure.
9. The method for testing the eddy current conductivity of the semiconductor material capable of compensating for the temperature according to claim 1, wherein the conductivity test probe is provided with a distance detecting part for detecting the distance between the bottom end of the conductivity test probe and the upper surface of the silicon ingot below.
10. The method of claim 1, wherein the distance detecting means is a non-contact displacement sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210023599.5A CN117214532A (en) | 2022-01-10 | 2022-01-10 | Semiconductor material eddy current conductivity testing method capable of compensating temperature |
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| CN202210023599.5A CN117214532A (en) | 2022-01-10 | 2022-01-10 | Semiconductor material eddy current conductivity testing method capable of compensating temperature |
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| CN202210023599.5A Pending CN117214532A (en) | 2022-01-10 | 2022-01-10 | Semiconductor material eddy current conductivity testing method capable of compensating temperature |
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